李肇基

期刊论文

1. 吴玉舟，李泽宏，李陆坪，任敏，李肇基（2022）. 单粒子辐射导致的VDMOS体二极管反向I-V曲线蠕变现象研究. 《电子元件与材料》.
2. 周锌，陈浪涛，乔明，罗萍，李肇基，张波（2022）. 抗辐射高压集成电路技术现状与发展. 《微电子学与计算机》.
3. 陈楠，陈万军，尚建蓉，刘超，李青岭，孙瑞泽，李肇基，张波（2021）. 基于新型绝缘栅触发晶闸管的高功率准矩形脉冲源. 《电子与封装》.DOI
4. Xiaorui Xu, Wan-Jun Chen, H. Tao, Qi Zhou, Zhao-ji Li, Bo Zhang (2020). Design and Experimental Verification of an Efficient SSCB Based on CS-MCT. IEEE transactions on power electronics.DOI
5. Yuanfei Wang, Ping Luo, Xiao Zeng, Ding-Ming Peng, Zhao-ji Li, Bo Zhang (2020). A Neural Network Assistance AMPPT Solar Energy Harvesting System With 89.39% Efficiency and 0.01–0.5% Tracking Errors. IEEE Transactions on Circuits and Systems Part 1: Regular Papers.DOI
6. 张波，章文通，蒲松，乔明，李肇基（2019）. 超结功率半导体器件. 《微纳电子与智能制造》.DOI
7. 李茂林，陈万军，王方洲，施宜军，崔兴涛，信亚杰，刘超，李肇基，张波（2019）. 高阈值电压低界面态增强型Al2O3/GaN MIS-HEMT. 《半导体技术》.DOI
8. 崔兴涛，陈万军，施宜军，信亚杰，李茂林，王方洲，周琦，李肇基，张波（2019）. 栅槽刻蚀工艺对增强型GaN HEMT器件性能的影响. 《半导体技术》.DOI
9. 高吴昊，陈万军，刘超，陶宏，夏云，谯彬，施宜军，邓小川，李肇基，张波（2019）. 一种带有注入增强缓冲层的4H-SiC GTO晶闸管. 《半导体技术》.DOI
10. Xiao-Chuan Deng, S. Gao, B. Tan, Jun-Tao Li, Xuan Li, Cheng-Zhan Li, Wan-Jun Chen, Zhao-ji Li, Bo Zhang (2019). Multizone Gradient-Modulated Guard Ring Technique for Ultrahigh Voltage 4H-SiC Devices With Increased Tolerances to Implantation Dose and Surface Charges. IEEE Journal of Emerging and Selected Topics in Power Electronics.DOI
11. Jiangping He, Bo Zhang, Xinjiang Gao, Chang-Dong Wu, Zhao-ji Li, Jiangtao Zhou (2019). A High Accuracy Weak Voltage LED Analog Dimming Method. IEEE Access.DOI
12. 何逸涛，乔明，李路，代刚，张波，李肇基 (2016). A Lateral Regulator Diode with Field Plates for Light-Emitting-Diode Lighting. Chinese Physics Letters.
13. 张波，章文通，乔明，李肇基（2016）. 功率超结器件的理论与优化. 《中国科学:物理学 力学 天文学》.
14. Rui-Chao Tian, Xiao-Rong Luo, K. Zhou, Qing-Sheng Xu, Jie Wei, Bo Zhang, Zhao-ji Li (2015). A novel high figure-of-merit SOI SJ LDMOS with ultra-strong charge accumulation effect*.DOI
15. Hangbiao Li, Bo Zhang, Ping Luo, Shaowei Zhen, Peng-Fei Liao, Yajuan He, Zhao-ji Li (2015). A miniature high-efficiency fully digital adaptive voltage scaling buck converter.DOI
16. 毛焜，乔明，张波，李肇基 (2014). A 800 V dual conduction paths segmented anode LIGBT with low specific on-resistance and small shift voltage. Journal of Semiconductors.
17. 伍伟，张波，罗小蓉，方健，李肇基 (2014). Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer. Chinese Physics B.
18. 陈伟中，李泽宏，张波，任敏，张金平，刘永，李肇基 (2014). A snapback suppressed reverse-conducting IGBT with uniform temperature distribution. Chinese Physics B.
19. 李航标，张波，罗萍，甄少伟，廖鹏飞，李肇基（2014）. 开关DC-DC变换器的自适应占空比跨周期控制方法. 《电子与信息学报》.
20. 张金平，李泽宏，张波，李肇基 (2014). A novel high performance TFS SJ IGBT with a buried oxide layer. Chinese Physics B.
21. 吴丽娟，章文通，张波，李肇基 (2014). A novel SOI high-voltage SJ-pLDMOS based on self-adaptive charge balance. Journal of Semiconductors.
22. 伍伟，张波，方健，罗小蓉，李肇基 (2014). A high voltage Bi-CMOS compatible buffer super-junction LDMOS with an N-type buried layer. Journal of Semiconductors.
23. Hangbiao Li, Bo Zhang, Ping Luo, Zhao-ji Li (2014). Adaptive duty ratio modulation technique in switching DC–DC converter operating in discontinuous conduction mode.DOI
24. 汪志刚，张波，李肇基 (2013). Analysis of OFF-state and ON-state performance in a silicon-on-insulator power MOSFET with a low-k dielectric trench. Journal of Semiconductors.
25. 范杰，张波，罗小蓉，李肇基 (2013). A Low Specific on-Resistance SOI Trench MOSFET with a Non-Depleted Embedded p-Island. Chinese Physics Letters.
26. Yuan-Hang Fan, Xiao-Rong Luo, Pei Wang, K. Zhou, Bo Zhang, Zhao-ji Li (2013). A High Figure-of-Merit SOI MOSFET with a Double-Sided Charge Oxide-Trench.DOI
27. 吴丽娟，章文通，张波，李肇基 (2013). A Novel Silicon-on-Insulator Super-Junction Lateral-Double-Diffused Metal-Oxide-Semiconductor Transistor with T-Dual Dielectric Buried Layers. Chinese Physics Letters.
28. 吴丽娟，章文通，张波，李肇基 (2013). A high voltage SOI pLDMOS with a partial interface equipotential floating buried layer. Journal of Semiconductors.
29. 范杰，张波，罗小蓉，汪志刚，李肇基 (2013). Analytical model for high-voltage SOI device with composite-k dielectric buried layer. Journal of Semiconductors.
30. Wei Wu, Bo Zhang, Jian Fang, Xiao-Rong Luo, Zhao-ji Li (2013). High-voltage super-junction lateral double-diffused metal?oxide semiconductor with a partial lightly doped pillar.DOI
31. 付强，张波，罗小蓉，李肇基 (2013). A dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor on a silicon-on-insulator substrate. Chinese Physics B.
32. 范杰，张波，罗小蓉，李肇基 (2013). High-voltage SOI lateral MOSFET with a dual vertical field plate. Chinese Physics B.
33. Wan-Jun Chen, Jing Zhang, Bo Zhang, Zhao-ji Li (2013). Analysis and reduction of the gate forward leakage current in AlGaN/GaN HEMTs employing energy-band modulation technology.DOI
34. 胡盛东，吴丽娟，周建林，甘平，张波，李肇基 (2012). Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n+-layer. Chinese Physics B.
35. 庄翔，乔明，张波，李肇基 (2012). Analysis of the breakdown mechanism for an ultra high voltage high-side thin layer silicon-on-insulator p-channel low-density metal-oxide semiconductor. Chinese Physics B.
36. 张金平，李泽宏，张波，李肇基 (2012). A novel high-voltage light punch-through carrier stored trench bipolar transistor with buried p-layer. Chinese Physics B.
37. Xia-Rong Hu, Bo Zhang, Xiao-Rong Luo, Yuan-Gang Wang, Tian-Fei Lei, Zhao-ji Li (2012). A new analytical model for the surface electric field distribution and breakdown voltage of the SOI trench LDMOS.DOI
38. Wen-Tong Zhang, Li-Juan Wu, M. Qiao, Xiao-Rong Luo, Bo Zhang, Zhao-ji Li (2012). Novel high-voltage power lateral MOSFET with adaptive buried electrodes.DOI
39. 汪志刚，陈万军，张竞，张波，李肇基 (2012). Monolithic integration of an AlGaN/GaN metal-insulator field-effect transistor with an ultra-low voltage-drop diode for self-protection. Chinese Physics B.
40. 乔明，庄翔，吴丽娟，章文通，温恒娟，张波，李肇基 (2012). Breakdown voltage model and structure realization of a thin silicon layer with linear variable doping on a silicon on insulator high voltage device with multiple step field plates. Chinese Physics B.
41. Wei-Zhong Chen, Bo Zhang, Zehong Li, M. Ren, Zhao-ji Li (2012). A new short-anoded IGBT with high emission efficiency.DOI
42. Xia-Rong Hu, Bo Zhang, Xiao-Rong Luo, Zhao-ji Li (2012). Universal trench design method for a high-voltage SOI trench LDMOS.DOI
43. Wen-Lian Wang, Bo Zhang, Zhao-ji Li (2011). Super junction LDMOS with enhanced dielectric layer electric field for high breakdown voltage.DOI
44. Li-Juan Wu, Shengdong Hu, Bo Zhang, Xiao-Rong Luo, Zhao-ji Li (2011). A −188 V 7.2 Ω · mm 2 , P-channel high voltage device formed on an epitaxy-SIMOX substrate ∗.DOI
45. Wensuo Chen, Bo Zhang, Jian Fang, Zhao-ji Li (2011). A novel lateral IGBT with a controlled anode for on-off-state loss trade-off improvement.DOI
46. Guo-Liang Yao, Bo Zhang, Zhao-ji Li, Yuan-Gang Wang, Xiao-Rong Luo, Rui Ge, Xi Chen, Tian-Fei Lei (2011). Method for manufacturing groove type longitudinal semiconductor device.
47. Xia-Rong Hu, Bo Zhang, Xiao-Rong Luo, Guo-Liang Yao, Xi Chen, Zhao-ji Li (2011). A new high voltage SOI LDMOS with triple RESURF structure.DOI
48. 成建兵，张波，李肇基 (2011). A novel high voltage LIGBT with an n-region in p-substrate. Journal of Semiconductors.
49. 吴丽娟，胡盛东，张波，李肇基（2010）. 一种新的基于E-SIMOX衬底的PSOI高压器件. 《固体电子学研究与进展》.
50. 郭海燕，张波，李肇基（2010）. 周期函数频率调制降低EMI水平研究. 《电力电子技术》.
51. 吴丽娟，胡盛东，张波，李肇基（2010）. 薄硅层阶梯埋氧PSOI高压器件新结构. 《固体电子学研究与进展》.
52. 张波，陈万军，邓小川，汪志刚，李肇基（2010）. 氮化镓功率半导体器件技术. 《固体电子学研究与进展》.
53. Zhao-ji Li (2010). SOI High Voltage Device with Double-Side Interface Charge Island Structure.
54. Zhao-ji Li (2010). A Novel Thin Silicon Layer PSOI High Voltage Device Structure with Step Buried Oxide.
55. 陈文锁，张波，李肇基，方健，关旭 (2010). Conductivity modulation enhanced lateral IGBT with SiO2shielded layer anode by SIMOX technology on SOI substrate. Journal of Semiconductors.
56. Li-Juan Wu, Shen-Dong Hu, Bo Zhang, Zhao-ji Li (2010). A new SOI high voltage device based on E-SIMOX substrate.DOI
57. Zhao-ji Li (2010). Gallium Nitride Power Semiconductor Devices Technology.
58. 郭海燕，张波，李肇基（2009）. 扩频DC/DC变换器的纹波分析. 《电力电子技术》.
59. 张波，邓小川，陈万军，李肇基（2009）. 宽禁带功率半导体器件技术. 《电子科技大学学报》.
60. Gang Xie, Wensuo Chen, Bo Zhang, Zhao-ji Li (2009). Negative Differential Regime free LIGBT utilizing Resistance-Controlled-Anode. International Conference on ASIC.
61. Zhao-ji Li (2009). High Voltage PDP Data Driver IC Based on Thin Layer SOI.
62. Wen-Lian Wang, Bo Zhang, Zhao-ji Li, Wan-Jun Chen (2009). High-Voltage SOI SJ-LDMOS With a Nondepletion Compensation Layer. IEEE Electron Device Letters.DOI
63. 陈文锁，谢刚，张波，李泽宏，李肇基 (2009). Novel lateral IGBT with n-region controlled anode on SOI substrate. Journal of Semiconductors.
64. Ze-kun Zhou, Ming Xing, Bo Zhang, Zhao-ji Li (2009). Design of novel bootstrap driver used in high power BUCK converter. 2009 IEEE 8th International Conference on ASIC.DOI
65. Zhao-ji Li (2009). Research on Voltage Ripple in Variable-frequency DC/DC Converter.
66. Shengdong Hu, Bo Zhang, Zhao-ji Li (2009). A new analytical model of high voltage silicon on insulator (SOI) thin film devices.DOI
67. 李琦，李肇基（2008）. 电阻场板LDMOS表面电场解析模型及优化设计. 《固体电子学研究与进展》.
68. 李琦，张波，李肇基（2008）. 双面阶梯埋氧层部分SOI高压器件新结构. 《物理学报》.
69. 李肇基，张波，罗小蓉，胡盛东（2008）. 高压SOI器件介质场增强. 《电力电子技术》.
70. Qi Li, Bo Zhang, Zhao-ji Li (2008). A new partial SOI high voltage device with double-faced step buried oxide structure.DOI
71. Xiao-Rong Luo, Wei Zhang, Bo Zhang, Zhao-ji Li, Shou-Guo Yang, Zhanying Zhan, Da-Ping Fu (2008). A new SOI high-voltage device with a step-thickness drift region and its analytical model for the electric field and breakdown voltage.DOI
72. Qi Li, Bo Zhang, Zhao-ji Li (2008). A new analytical model of breakdown voltage for the SD LDMOS.DOI
73. Zhao-ji Li (2008). An Analytical Model of the Surface Electrical Field Distributions of RFP LDMOS and Its Optimum Design.
74. Zhao-ji Li (2008). SOI lateral high voltage devices and endure voltage models based on ENDIF principle.
75. Wan-Jun Chen, Bo Zhang, Zhao-ji Li (2008). Realizing high voltage SJ-LDMOS with non-uniform N-buried layer.DOI
76. 吕连国，方健，张波，李肇基（2007）. 一种新型双稳态过温保护电路. 《电子科技大学学报》.
77. 张金平，张波，李肇基，周春华，罗小蓉（2007）. 4H-SiC SJ结构反向击穿电压的解析模型. 《固体电子学研究与进展》.
78. 陈永强，李泽宏，李肇基，张波（2007）. 一种用于电源管理IC的电流采样电路. 《电子器件》.
79. Wan-Jun Chen, Bo Zhang, Zhao-ji Li (2007). Optimization of super-junction SOI-LDMOS with a step doping surface-implanted layer.DOI
80. Qi Li, Bo Zhang, Zhao-ji Li (2007). Analytical Model and Optimization of Bulk-Silicon Surface Implanted LDMOS with p Buried Layer.
81. Zhao-ji Li (2007). Strengthening the Teaching of Theories in Microelectronic Process Training the Practical Skills of Students.
82. Ze-Hong Li, Xiao-Song Wang, Yi-Ming Wang, K. Yi, Bo Zhang, Zhao-ji Li (2007). Analysis and Performance of a Smart,High-Voltage SENSFET.
83. Zhao-ji Li (2007). A High Voltage Level Shifter Circuit Implemented in Single LDMOS and Its Application.
84. Guo-Y. Wu, Chun-Hua Zhou, Ze-kun Zhou, Bo Zhang, Chen-Li-Xin Li, Zhao-ji Li, Jun Wang, Wen-Ju Chen (2007). Piecewise linear temperature compensating circuit and temperature compensation voltage reference source.
85. Zhao-ji Li (2007). New Technology for High-Voltage SOI LDMOS——Application of electric field modulation and charge shielding effects to high-voltage SOI LDMOS.
86. Zhao-ji Li (2007). Temperature Compensated Current Reference Controlled by Feedback.
87. Wan-Jun Chen, Bo Zhang, Zhao-ji Li (2007). Optimization of the VDMOSFET structure with reduced gate charge.DOI
88. Wan-Jun Chen, Bo Zhang, Zhao-ji Li (2007). Realizing High Breakdown Voltage SJ-LDMOS on Bulk Silicon Using a Partial n-Buried Layer.
89. Qi Li, Zhao-ji Li, Bo Zhang (2007). Analytical model for the surface electrical field distribution of double RESURF device with surface implanted P-top region.DOI
90. Zhao-ji Li (2007). A Precise Self-Regulation Slope Compensation Circuit for DC-DC Boost Converter.
91. Wan-Jun Chen, Bo Zhang, Zhao-ji Li, Zhe Liu (2007). A novel high voltage LDMOS for HVIC with the multiple step shaped equipotential rings.DOI
92. Zheng-fan Zhang, Jian Fang, Ruzhang Li, Zhengyuan Zhang, Zhao-ji Li (2007). Threshold voltage model of deep submicrometer double-gate fully-depleted SOI MOS devices. 2007 International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications.DOI
93. Zhao-ji Li (2007). A Full Breakdown Model of Thin Epitaxial RESURF LDMOS.
94. Zhao-ji Li (2007). Analytical Model for Surface Electrical Field Distributions of LDD Power Devices.
95. Zheng-fan Zhang, Jian Fang, Ruzhang Li, Zhengyuan Zhang, Zhao-ji Li (2007). Threshold voltage modeling of deep-submicron double-gate fully-depleted SOI MOSFET. International Conference on ASIC.DOI
96. 罗萍，李肇基，甄少伟（2006）. 一种基于负载状态的分段式PSM调制模式. 《电工技术学报》.
97. 李琦，李肇基，张波（2006）. 薄外延阶梯掺杂漂移区RESURF耐压模型. 《固体电子学研究与进展》.
98. 郭宇锋，张波，方健，杨舰，李肇基（2006）. 界面电荷耐压模型:SOI高压器件纵向耐压新理论. 《固体电子学研究与进展》.
99. 罗萍，李肇基，陈光（2006）. 一种新的传导型共模／差模EMI分离测试网络. 《电子测量与仪器学报》.
100. Bo Zhang, Wan-Jun Chen, K. Yi, Zhao-ji Li (2006). Influence of the minority carrier extracted by the base electrode on current gain of bipolar power transistors.DOI
101. Zhao-ji Li (2006). S-switching Mapping Model of PSM in DCM Boost Converter.
102. Zhao-ji Li, Lei Yu, Bo Zhang (2006). A Novel High Output Resistance Current Source Based on Negative Resistance.
103. Jian Fang, Wei-Pu Lin, Xianda Zhou, Zhao-ji Li (2006). A WKB solution of excess carriers in conductivity modulation base with non-uniform lifetime.DOI
104. Xiao-Rong Luo, Zhao-ji Li, Bo Zhang (2006). SOI structure with low k dielectric buried layer and its power device.
105. Bao-Xing Duan, Bo Zhang, Zhao-ji Li (2006). New thin-film power MOSFETs with a buried oxide double step structure.DOI
106. Xiao-Rong Luo, Zhao-ji Li, Bo Zhang (2006). A Highly Heat-Dissipating SOI High Voltage Power Device with a Variable k Dielectric Buried Layer.
107. Zhao-ji Li (2006). A Thermal Shutdown Circuit with Hysteresis.
108. Qiang Li, Jun Yi, Bo Zhang, Zhao-ji Li (2006). A dual complex pole-zero cancellation frequency compensation with gain-enhanced stage for three-stage amplifier.DOI
109. 牛全民，罗萍，张波，李肇基（2005）. 基于Boost变换器的PSM建模和分析. 《电力电子技术》.
110. Zhao-ji Li (2005). Analysis and Design of a CMOS Current-Controlled Oscillator.
111. Zhao-ji Li (2005). Key Technologies for Novel Switching Power Supplies.
112. Jian Fang, K. Yi, Zhao-ji Li, Bo Zhang (2005). On2State Breakdown Model for High Voltage RESURF LDMOS.
113. 李强，易俊，李肇基，张波 (2005). A Novel Frequency Compensation Technique for Three-Stage Amplifier. Journal of Electronic Science and Technology.
114. Zhao-ji Li (2005). Implementation of Fuzzy Pulse Skip Modulation Based on FPGA.
115. Zhao-ji Li (2005). Threshold Voltage Model of Non-Uniform Channel DMOS Devices.
116. Zhao-ji Li (2005). Modeling and Analysis for PSM based on Boost Converter.
117. 罗小蓉，李肇基，张波，龚敏（2004）. 表面氢化对SiC/金属接触的作用机理. 《固体电子学研究与进展》.
118. 罗萍，熊富贵，李肇基，陈光（2004）. PSM开关变换器的大信号模型与瞬态特性. 《电子学报》.
119. Jian Fang, Zhi-Ping Lu, Jian Yang, Zhao-ji Li (2004). Primary side detection and peak current mode control in flyback converter.DOI
120. Zhao-ji Li, Yu-Feng Guo, Bo Zhang, Jian Fang, Ze-Hong Li (2004). A new 2D analytical model of double RESURF in SOI high voltage devices. Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..DOI
121. Jun Yi, Bo Zhang, Jian Fang, Zhao-ji Li (2004). A New 1-V Second-Order Temperature-Compensated Current Reference.
122. Zhao-ji Li (2004). A Novel Current-Control-Mode Relaxation Oscillator for SPIC's.
123. Ping Luo, Zhao-ji Li, Fu-Gui Xiong, Chenguangju (2004). Fuzzy pulse skip modulation mode in DC-DC converter. 9th IEEE International Power Electronics Congress, 2004. CIEP 2004.DOI
124. Ze-Hong Li, Zhao-ji Li, Bo Zhang, Jian-You Fan (2004). Mobility model of nonuniform channel MOS by radiation induced positive spatial charge.DOI
125. Zhao-ji Li (2004). An Investigation into Characteristics of Switching Power Supply with PSM.
126. 罗萍，李肇基，陈光(?)（2003）. 三相四线制系统下电流谐波和无功功率的检测与补偿. 《电子测量与仪器学报》.
127. Jian Fang, Zhao-ji Li, Bo Zhang, Ping Luo, Xiao-Rong Luo, Yu-Feng Guo, Ze-Hong Li, Yuan-Dong Long, Lu-Yang Luo, Zhi-Ping Lu（2003）. PSoC —新一代SoC技术——电子科技大学，微电子与固体电子学院，IC设计中心.
128. Bo Zhang, A. Huang, Bu-Dong You, Zhao-ji Li, Jian Fang, Xiao-Rong Luo (2002). Comparative study of 1800 V and 2400 V MCT and IGBT. IEEE 2002 International Conference on Communications, Circuits and Systems and West Sino Expositions.DOI
129. Zheng-fan Zhang, Jia-Bin Zhang, Lin Fan, Huiran Shu, Zhao-ji Li (2002). High-speed 12 bit A/D converter. IEEE 2002 International Conference on Communications, Circuits and Systems and West Sino Expositions.DOI
130. Zhao-ji Li, Lu-Yang Luo, Yu-Feng Guo, Bo Zhang, Jian Fang, J. Zeng (2002). Breakdown theory of a new SOI composite structure. IEEE 2002 International Conference on Communications, Circuits and Systems and West Sino Expositions.DOI
131. Ping Luo, Lu-Yang Luo, Zhao-ji Li, Jian Yang, Guangiv Chen (2002). Skip cycle modulation in switching DC-DC converter. IEEE 2002 International Conference on Communications, Circuits and Systems and West Sino Expositions.DOI
132. 方健，李肇基，李鸿雁，杨健（2001）. 低能He注入局域寿命控制电导调制型功率器件输运模型. 《电子学报》.
133. Zhao-ji Li (2001). A Transport Model for Conductivity Modulation Power Device with Localized Lifetime Control by Low Energy He Ion Implantation.
134. 杨健，朱小安，方健，李肇基（2000）. 空穴注入控制型LIGBT的研究. 《电子学报》.
135. 朱小安，李学宁，方健，杨健，李肇基（2000）. 用于智能功率集成电路中的LDMOS/LIGBT混合结构. 《电子学报》.
136. Zhao-ji Li, Ming Zhang, Jian Yang, Jian Fang (2000). Analytical turn-off current model for type of conductivity modulation power MOSFETS with extracted excess carrier.DOI
137. 李肇基（1997）. 高速IGBT的二维数值分析. 《电子科技大学学报》.
138. 曾军，李肇基，陈星弼（1992）. 有场限环和横向变掺杂的平面结二极管电场分布的二维数值分析. 《电子学报》.
139. 李肇基，王国新，曾军，吴世勇（1992）. 互补横向绝缘栅双极晶体管的模型与特性. 《电子学报》.
140. Xing-Bi Chen, Bo Zhang, Zhao-ji Li (1992). Theory of optimum design of reverse-biased p-n junctions using resistive field plates and variation lateral doping.DOI
141. 李肇基，陈星弼，曾军（1989）. 功率器件有 JTE 结构的电场的数值分析与模拟. 《电子科技大学学报》.
142. 李肇基（1985）. 考虑热載流子效应的MOS管模拟特性. 《电子科技大学学报》.