敖金平｜江南大学｜学者主页

2026

高温栅压应力对SiC MOSFET电学特性的影响

党宁，华文渊，胡晴，李杨，王霄，敖金平，闫大为

《微电子学》

DOI

2026

微波无线能量传输系统中氮化镓整流器的技术进展

张旭，李杨，李秋璇，刘涛，王霄，刘璋成，陈治伟，姜风秋，敖金平

《太赫兹科学与电子信息学报》

2026

GaN HEMT-Based Pressure Sensor With Microwave Rectification-Enhanced Sensitivity

Yang Li, Man-Xuan Niu, Yan Xuan, Qiu-Xuan Li, Xiao Wang, Zhiwei Chen, Zhangcheng Liu, Tao Liu, Jin‐Ping Ao

IEEE Microwave and Wireless Technology Letters

DOI

2026

Vertical GaN Schottky Barrier Diode Based on Anode-First Process and Low-Temperature Ohmic Contact

Xiao Wang, Tian-Yun Zhu, Ping Gong, Tian-Yi He, Sen Peng, Xia Zhu, JingRun Miao, Feng-Qiu Jiang, Tao Liu, Zhiwei Chen, Zhangcheng Liu, Yang Li, Dawei Yan, Li-Hua Bai, Guofeng Yang, Jianbo Liang, Jin‐Ping Ao

IEEE Transactions on Electron Devices

DOI

2026

Annealing-Tuned Barrier Height in Quasi-Vertical GaN Schottky Diodes for Microwatt Microwave Rectification

Yang Li, Xu Zhang, Zheng-Ning Gu, Qiu-Xuan Li, Ren-Pin Huang, Tao Liu, Zihao Zhou, Die Xiao, Zhiwei Chen, Zhangcheng Liu, Feng-Qiu Jiang, Xiao Wang, Jin‐Ping Ao

IEEE Transactions on Electron Devices

DOI

2026

S-Carboxymethyl-L-Cysteine-Functionalized AlGaN/GaN High-Electron-Mobility Transistor for Cd 2+ Detection

ShiMin Liu, Xiao Wang, Ping Gong, Ming Guo, JiaKang Chen, Xia Zhu, JingRun Miao, Fengqiu Jiang, Tao Liu, Zhiwei Chen, Zhangcheng Liu, Yang Li, Dawei Yan, Lihua Bai, Guofeng Yang, Jiyu Zhou, Jianbo Liang, Jin‐Ping Ao

IEEE Sensors Journal

DOI

2026

GaN Schottky Barrier Diodes With a Quasi-Depleted Layer for Ultra-Low Power Microwave Rectification

Qiu-Xuan Li, Yang Li, Zheng-Ning Gu, Xu Zhang, T Liu, Ren-Pin Huang, Zhang-Cheng Liu, X Wang, Zhiwei Chen, Feng-Qiu Jiang, Jin‐Ping Ao

IEEE Electron Device Letters

DOI

2026

Adaptive Voltage Model for Microwave Energy Harvest

Ren-Pin Huang, Yang Li, Tao Liu, Zheng-Ning Gu, Jin‐Ping Ao

DOI

2026

High-Efficiency 5.8-GHz Rectification Enabled by Doping-Optimized Quasi-Vertical GaN SBDs

Qiu-Xuan Li, Yang Li, Ren-Pin Huang, Xu Zhang, Tao Liu, Xiao Wang, Zhang-Cheng Liu, Zhi-Wei Chen, Feng-Qiu Jiang, Jin‐Ping Ao

DOI

2026

Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances

Taofei Pu, Xiaobo Li, Liuan Li, Jin‐Ping Ao

Materials

DOI

2026

Steric hindrance effect synergizing hole-trapping technique: High-Stability and high-accuracy Si/CdS n-n heterojunction photoelectrochemical biosensing of amyloid-β42

Zhiwei Chen, Yuanlong Wang, Fengqiu Jiang, Tao Liu, Zhangcheng Liu, Zhangcheng Liu, Xiao Wang, Li Ning Yang, Ke Fang, Jin‐Ping Ao

Talanta

DOI

2026

Ge/MoS 2 Optoelectronic Memory for Broadband Sensing and In-Sensor Computing

Qingguo Xu, Kuanxin Chen, Hongshun Zhang, Yang Li, Xiao Renshaw Wang, Zhangcheng Liu, Zhiwei Chen, Jie You, Jin‐Ping Ao

IEEE Sensors Journal

DOI

2025

基于凹槽氮化硅的AlGaN/GaN HEMT pH传感器研究

王利强，王霄，陈治伟，李杨，敖金平

《科技与创新》

DOI

2025

Au敏感膜与栅极凹槽对AlGaN/GaN HEMT pH传感器的性能影响研究

王利强，敖金平

《科学技术创新》

2025

GaN芯片封装技术研究进展与趋势

宋海涛，王霄，龚平，朱霞，李杨，刘璋成，闫大为，陈治伟，尤杰，敖金平

《电子与封装》

DOI

2025

GaN基传感器研究进展

刘诗旻，陈佳康，王霄，郭明，王利强，王鹏超，宣艳，缪璟润，朱霞，白利华，尤杰，陈治伟，刘璋成，李杨，敖金平

《电子与封装》

DOI

2025

A Top Floating Gate Heterojunction Structure for Integrated Photoelectric Computing and Low Voltage Memory

Hongshun Zhang, Yiqing Cao, Qingguo Xu, Kuanxin Chen, Xiao Xia Wang, Yang Li, Zhangcheng Liu, Zhiwei Chen, Tao Liu, Fengqiu Jiang, Jie You, Liming Wang, Jin‐Ping Ao

ACS Applied Electronic Materials

DOI

2025

Monolithic Pressure-Ultraviolet Sensor Based on AlGaN/GaN Heterostructure Thin Film

Yang Li, Yan Xuan, Kunshu Wang, Zebin Kong, Lin Du, Manxuan Niu, Wenqian Wang, Xia Zhu, Zhiwei Chen, Jie You, Xiao Wang, Zhangcheng Liu, Jin‐Ping Ao

IEEE Sensors Journal

DOI

2025

Enhanced current sensitivity of AlGaN/GaN pH sensor by combining recessed-gate and increasing the ratio of W/L

Liqiang Wang, Xiao Wang, Ming Guo, Xia Zhu, Jiyu Zhou, Yingzhao Geng, Hao Wu, Zhiwei Chen, Jie You, Sen Zhao, Li Yang, Zhangcheng Liu, Dawei Yan, Lihua Bai, Ziyang Hu, Jin‐Ping Ao

Journal of Materials Science Materials in Electronics

DOI

2025

Design of Extended Continuous Class B/J Wideband High-Efficiency Power Amplifier With Input and Output Waveform Engineering

Bo Shao, Yang Li, Kunzhe Zhang, Ren-Pin Huang, Junchao Yao, Tao Liu, Haoyuan Sun, Zhangcheng Liu, Zhiwei Chen, Jie You, Xiao Wang, Jin‐Ping Ao

IEEE Microwave and Wireless Technology Letters

DOI

2025

Investigation of GaN SBD temperature sensor with ultra-wide detection range from 6 K to 523 K based on n−-GaN/n+-GaN homostructure

Wenqian Wang, Zhangcheng Liu, Jie You, Zhiwei Chen, Xiao Wang, Yang Li, Jin‐Ping Ao

Materials Science in Semiconductor Processing

DOI

2025

Design of High-Power Microwave Rectifier With Wide Temperature Range

Ren-Pin Huang, Yang Li, Tao Liu, Qiu-Xuan Li, Bo Shao, Jun-Chao Yao, Zhiwei Chen, Z G Liu, Xiao Wang, Jin‐Ping Ao

IEEE Microwave and Wireless Technology Letters

DOI

2025

Degradation Mechanisms of AlGaN/GaN High Electron Mobility Transistors Induced by High-Energy Electron Irradiation

Xiao Wang, Chong Zhang, Xia Zhu, Feng-Qiu Jiang, Tao Liu, Zhiwei Chen, Z G Liu, Yang Li, Dawei Yan, Lihua Bai, Ziyang Hu, Jin‐Ping Ao

DOI

2025

AI-Driven Modeling of GaN HEMT and SBD for Wireless Power Transfer Systems

Junchao Yao, Li Yang, Bo Shao, Ren-Pin Huang, Aman Sun, Xiao Wang, Jin‐Ping Ao

IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

DOI

2025

Design of High-Efficiency and Broadband Power Amplifier Based on Extended Resistive-Reactive Series of Continuous Modes

Bo Shao, Yang Li, Kunzhe Zhang, Junchao Yao, Ren-Pin Huang, Tao Liu, Haoyuan Sun, Zhangcheng Liu, Zhiwei Chen, Jie You, Jiyu Zhou, Xiao Wang, Jin‐Ping Ao

IEEE Microwave and Wireless Technology Letters

DOI

2025

Ultralow-Power Microwave Rectifier with TiN Anode GaN Schottky Barrier Diode

Qiu-Xuan Li, Li Yang, Ren-Pin Huang, Tao Liu, Man-Xuan Niu, Jin‐Ping Ao

IEEE MTT-S International Wireless Symposium (IWS)

DOI

2025

Integrated Polarization-Sensitive Amplification System for Multimode Polarization Imaging

Jie You, Bu Zhang, Qiancui Zhang, Han Zhao, Yuekai Hao, Yichi Zhang, Xiao Wang, Yang Li, Zhangcheng Liu, Jin‐Ping Ao, Zhiwei Chen, Liming Wang

ACS Photonics

DOI

2025

Design and Fabrication of Milliwatt and Microwatt Microwave Rectifiers Based on Low Turn-On GaN Schottky Barrier Diodes

Qiu-Xuan Li, Yang Li, Tao Liu, Ren-Pin Huang, Xia Zhu, Pengbo Liu, Xiao Wang, Zhiwei Chen, Jie You, Z G Liu, Jin‐Ping Ao

IEEE Microwave and Wireless Technology Letters

DOI

2025

High-temperature performance of metal/n-Ga2O3/p-diamond heterojunction diode fabricated by ALD method

Dan Zhao, Zhangcheng Liu, Wenqian Wang, Zhiwei Chen, Qin Lu, Xiao Wang, Yang Li, Jin‐Ping Ao

Applied Physics Letters

DOI

2024

GaN P沟道功率器件及集成电路研究进展

朱霞，王霄，王文倩，李杨，李秋璇，闫大为，刘璋成，陈治伟，敖金平

《电子与封装》

2024

All‐Optic Logical Operations Based on the Visible‐Near Infrared Bipolar Optical Response

Jie You, Han Zhao, Ningning Zhang, Qiancui Zhang, Yichi Zhang, Yang Liu, Yang Li, Jin‐Ping Ao, Zuimin Jiang, Zhenyang Zhong, Hui Yong Guo, Huiyong Hu, Liming Wang, Zhangming Zhu

Advanced Science

DOI

2024

Multioctave Power Amplifier Based on Extended Resistive-Reactive Continuous Class F Mode

Bo Shao, Li Yang, Ren-Pin Huang, Junchao Yao, Pengbo Liu, Tao Liu, Xiao Wang, Jin‐Ping Ao

IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

DOI

2024

Improved p-GaN/AlGaN/GaN HEMTs with magnetronsputtered AlN cap layer

Mao Jia, Bin Hou, Ling Yang, Zhiqiang Xue, Qian Hui Xiao, Meng Zhang, Hao Lu, Mei Wu, Xitong Hong, Jiale Du, Qingyuan Chang, Xiao Wang, Yang Li, Jin‐Ping Ao, Xiaohua Ma, Yue Hao

Applied Surface Science

DOI

2024

High sensitive diamond Schottky diode temperature sensor based on selective grown diamond film

Wenqian Wang, Zhangcheng Liu, Xiao Wang, Yang Li, Jin‐Ping Ao

Materials Letters

DOI

2024

Design of a High-Gain Frequency Reconfigurable Antenna for Wireless Power Transmission

Man-Xuan Niu, Yang Li, Qiu-Xuan Li, Yan Xuan, Jin‐Ping Ao

IEEE Asia-Pacific Conference on Antennas and Propagation

DOI

2024

Vertical GaN Schottky barrier diodes with ohmic contact on N-polar by the atomic layer deposition of aluminum oxide interfacial layer

Yongkai Yang, Zhengweng Ma, Zhongwei Jiang, Bo Li, Linfei Gao, Shuai Li, Qiubao Lin, Hezhou Liu, Hezhou Liu, Wangying Xu, Gaopan Chen, Chunfu Zhang, Zhihong Liu, Zhihong Liu, Hsien-Chin Chiu, Hao‐Chung Kuo, Jin‐Ping Ao, Xinke Liu

Applied Surface Science

DOI

2024

Vertical van der Waals Integrated p‐W0.09Re0.91S2 /GaN Heterojunction for Ultra‐High Detectivity UV Image Sensing

Yongkai Yang, Jinpei Lin, Yeying Huang, Yating Zhang, Min Wang, Xi Zhu, Jiachang Guo, Kangkai Fan, Jin‐Ping Ao, Jingbo Li, Xinke Liu

Laser & Photonics Review

DOI

2024

A High-Efficiency and Low-Ripple Microwave Rectifier Based on GaN Schottky Barrier Diode

Ren-Pin Huang, K. Zhang, Li Yang, Jun-Chao Yao, Xia Zhu, Jin‐Ping Ao

IEEE MTT-S International Wireless Symposium (IWS)

DOI

2024

Forward leakage currents in GaN p-i-n diodes

Ao Lu, Xiaofei Pan, Xinjie Zhou, Yang Li, Xiao Wang, Jin‐Ping Ao, Dawei Yan

Solid-State Electronics

DOI

2024

Design and Fabrication of GaN HEMT for Microwave Application

Liu Pengbo, Yang Li, Xiao Wang, Yao Junchao, AO Jin-Ping

DOI

2023

微波氮化镓肖特基二极管及其应用

李秋璇，李杨，王霄，陈治伟，敖金平

《电子与封装》

2023

GaN基互补型逻辑电路的研究进展及挑战

张彤，刘树强，何亮，成绍恒，李柳暗，敖金平

《电子与封装》

2023

Novel Equivalent Current Model for GaN-Based High-Efficiency Microwave Rectification

Tao Liu, Yang Li, Tingting Wang, Xiao Wang, Ren-Pin Huang, Qiu-Xuan Li, Lin‐An Yang, Jin‐Ping Ao, Yue Hao

IEEE Transactions on Microwave Theory and Techniques

DOI

2023

Enhancement-mode AlGaN/GaN HEMTs with a semi-wraparound metal-insulator-semiconductor gate

Mao Jia, Bin Hou, Fuchun Jia, Ling Yang, Jin‐Ping Ao, Xiaohua Ma

International Symposium on Next-Generation Electronics

DOI

2023

MiRNA-155 Biosensors Based on AlGaN/GaN Heterojunction Field Effect Transistors With an Au-SH-RNA Probe Gate

Yue Jing He, Ke-Yue Chen, Tingting Wang, Mao Jia, Lihua Bai, Xiao Wang, Yuyu Bu, Jin‐Ping Ao

IEEE Transactions on Electron Devices

DOI

2023

Breathable Encapsulated Liquid Metal Foam‐Based Soft Stress Sensor

Jin Xu, Zhimin Wang, Xinxin Wang, Yali Wu, Ruizhe Xing, Tingting Yu, Yang Li, Jin‐Ping Ao, Yebo Tao, Bowen Bai, Michael David Dickey, Dongguang Zhang, Jiayi Yang

Advanced Materials Technologies

DOI

2022

Hybrid-anode structure designed for a high-performance quasi-vertical GaN Schottky barrier diode

王启亮，王婷婷，蒲涛飞，成绍恒，李小波，李柳暗，敖金平

Chinese Physics B

2022

Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator

蒲涛飞，刘树强，李小波，王婷婷，都继瑶，李柳暗，何亮，刘新科，敖金平

Chinese Physics B

2022

Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga2O3/p-diamond heterojunction

林旺，王婷婷，王启亮，吕宪义，李根壮，李柳暗，敖金平，邹广田

Chinese Physics B

2022

Effect of anode area on the sensing mechanism of vertical GaN Schottky barrier diode temperature sensor

都继瑶，李小波，蒲涛飞，敖金平

Chinese Physics B

2022

Transport and Breakdown Mechanisms of Gate Leakage Current in Lattice-Matched In₀.₁₇Al₀.₈₃N/GaN HEMTs

Bingxian Ou, Ning Jin, Yancheng Li, Xiaohong Yan, Jian Xu, Yang Li, Jin‐Ping Ao, Dawei Yan

IEEE Transactions on Electron Devices

DOI

2022

High-Efficiency and High-Current GaN-Based Microwave Rectifier for Wireless Strain Sensing and Monitoring

Tao Liu, Yang Li, Jiayi Yang, Tingting Wang, Xiao Wang, Lin‐An Yang, Michael David Dickey, Jin‐Ping Ao, Yue Hao

IEEE Transactions on Microwave Theory and Techniques

DOI

2022

Ultra-High Efficiency Microwave Rectifier Based on Patterned GaN Schottky Barrier Diode

Tao Liu, Tingting Wang, Yang Li, Lin‐An Yang, Jin‐Ping Ao, Yue Hao

IEEE MTT-S International Wireless Symposium (IWS)

DOI

2022

Decreased trap density and lower current collapse in AlGaN/GaN HEMTs by adding a magnetron-sputtered AlN gate

Mao Jia, He-Nan Zhang, Xiao Wang, Chenyang Liu, Taofei Pu, Tingting Wang, He Yue, Feng-Qiu Jiang, Ke Fang, Ling Yang, Yuyu Bu, Yang Li, Xiaohua Ma, Jin‐Ping Ao, Yue Hao

Journal of Physics D Applied Physics

DOI

2021

Band alignment between NiOxand nonpolar/semipolar GaN planes for selective-area-doped termination structure

都继瑶，周继禹，李小波，蒲涛飞，李柳暗，刘新智，敖金平

Chinese Physics B

2021

高性能GaN微波整流肖特基二极管的设计和制作

钟易润，李杨，谭庶欣，蒲涛飞，罗向东，敖金平

《半导体技术》

DOI

2021

Co-design of GaN based Schottky Barrier Diode and Rectification Sensor with High Efficiency and Sensitivity

Yang Li, Jiayi Yang, Taofei Pu, Jin‐Ping Ao

IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

DOI

2019

GaN基电力电子器件关键技术的进展

彭韬玮，王霄，敖金平

《电源学报》

DOI

2019

Temperature-Dependent Characteristics of GaN Schottky Barrier Diodes with TiN and Ni Anodes

王婷婷，王霄，李小波，张进成，敖金平

Chinese Physics Letters

2018

Synthesis of thermally stable HfOxNyas gate dielectric for AlGaN/GaN heterostructure field-effect transistors

张彤，蒲涛飞，谢天，李柳暗，补钰煜，王霄，敖金平

Chinese Physics B

2017

Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostructure field-effect transistors

王磊，张家琦，李柳暗，前田裕太郎，敖金平

Chinese Physics B

2016

Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate

张家琦，王磊，李柳暗，王青鹏，江滢，朱慧超，敖金平

Chinese Physics B

2016

Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature

李柳暗，张家琦，刘扬，敖金平

Chinese Physics B

2012

GaN MOSFET的设计制作及其表征

王青鹏，江滢，敖金平，王德君

《电力电子技术》

2003

高速AlGaAs/GaAs HBT D-触发器和静态分频器

曾庆明，徐晓春，李献杰，敖金平，王全树，郭建魁，刘伟吉，揭俊锋

《固体电子学研究与进展》

2002

GaAs基InAlAs/InGaAsMHEMT直流特性研究

李献杰，敖金平，曾庆明，刘伟吉，徐晓春，刘式墉，梁春广

《固体电子学研究与进展》

2002

1.25Gb/sInP基多量子阱激光器与HBT驱动电路的单片集成(英文)

李献杰，曾庆明，徐晓春，敖金平，赵方海，杨树人，柯锡明，王志功，刘式墉，梁春广

Journal of Semiconductors

2002

单电源供电MSM/HEMT OEIC

王蓉，王志功，柯锡明，敖金平，李献杰，刘伟吉

《高技术通讯》

2002

1.55μm光发射OEIC技术研究

李献杰，曾庆明，徐晓春，刘伟吉，敖金平，王全树，杨树人，赵方海，柯锡明，王志功，刘式墉，梁春广

《半导体光电》

2002

单片集成长波长光接收机

敖金平，刘伟吉，李献杰，曾庆明，赵永林，乔树允，徐晓春，王全树

《半导体光电》

2002

超低功耗GaAs PHEMT跨阻前置放大器

王蓉，王志功，柯锡明，敖金平，李献杰，刘伟吉

《光电子·激光》

2002

InAlAsInGaAs HEMT跨阻前置放大器的设计与实现

王蓉，王志功，柯锡明，敖金平，李献杰，刘伟吉

《东南大学学报(自然科学版)》

2000

GaAs HBT直接耦合微波单片集成电路

曾庆明，徐晓春，刘伟吉，李献杰，敖金平，王全树，郭建魁，赵永林，揭俊锋

《功能材料与器件学报》

2000

AlGaN/GaN HEMT器件研究

曾庆明，刘伟吉，李献杰，赵永林，敖金平，徐晓春，吕长志

《功能材料与器件学报》

2000

InP/InGaAs HBT湿法化学选择腐蚀技术

李献杰，曾庆明，徐晓春，敖金平，刘伟吉，梁春广

《功能材料与器件学报》

2000

WN/W难熔栅自对准增强型n沟道HFET

刘伟吉，曾庆明，李献杰，敖金平，赵永林，郭建魁，徐晓春

《功能材料与器件学报》

2000

单片集成MSM/HEMT长波长光接收机

敖金平，曾庆明，赵永林，李献杰，蔡克理，刘式墉，梁春广

《光电子·激光》

2000

MCM倒装焊技术在CMOS-SEED灵巧象素中的应用研究

李献杰，曾庆明，蔡克理，敖金平，赵永林，王全树，郭建魁，刘伟吉，徐晓春，张钢，赵建中

《光电子·激光》

1999

与CMOS-SEED灵巧象素相关的倒装焊工艺

李献杰，曾庆明，蔡克理，敖金平，赵永林，焦智贤，王全树，郭建魁

《微纳电子技术》

1999

OEIC光接收机研究的湿法选择腐蚀

敖金平，曾庆明，赵永林，李献杰，蔡克理，梁春广，刘式墉

《微纳电子技术》

1998

InP基InAlAs-InAs HEMT

敖金平，曾庆明，蔡克理，赵永林

《微纳电子技术》

1992

InAlAs/InGaAs调制掺杂场效应晶体管研究

敖金平，曾庆明

《微纳电子技术》

1991

用于超高速数字和混合模拟/数字LSI/VLSI电路的自对准栅Ⅲ-Ⅴ族异质结构FET技术

A.I.Akinwande, 敖金平

《微纳电子技术》

精选作品

期刊论文

高温栅压应力对SiC MOSFET电学特性的影响

微波无线能量传输系统中氮化镓整流器的技术进展

GaN HEMT-Based Pressure Sensor With Microwave Rectification-Enhanced Sensitivity

Vertical GaN Schottky Barrier Diode Based on Anode-First Process and Low-Temperature Ohmic Contact

Annealing-Tuned Barrier Height in Quasi-Vertical GaN Schottky Diodes for Microwatt Microwave Rectification

S-Carboxymethyl-L-Cysteine-Functionalized AlGaN/GaN High-Electron-Mobility Transistor for Cd 2+ Detection

GaN Schottky Barrier Diodes With a Quasi-Depleted Layer for Ultra-Low Power Microwave Rectification

Adaptive Voltage Model for Microwave Energy Harvest

High-Efficiency 5.8-GHz Rectification Enabled by Doping-Optimized Quasi-Vertical GaN SBDs

Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances

Steric hindrance effect synergizing hole-trapping technique: High-Stability and high-accuracy Si/CdS n-n heterojunction photoelectrochemical biosensing of amyloid-β42

Ge/MoS 2 Optoelectronic Memory for Broadband Sensing and In-Sensor Computing

基于凹槽氮化硅的AlGaN/GaN HEMT pH传感器研究

Au敏感膜与栅极凹槽对AlGaN/GaN HEMT pH传感器的性能影响研究

GaN芯片封装技术研究进展与趋势

GaN基传感器研究进展

A Top Floating Gate Heterojunction Structure for Integrated Photoelectric Computing and Low Voltage Memory

Monolithic Pressure-Ultraviolet Sensor Based on AlGaN/GaN Heterostructure Thin Film

Enhanced current sensitivity of AlGaN/GaN pH sensor by combining recessed-gate and increasing the ratio of W/L

Design of Extended Continuous Class B/J Wideband High-Efficiency Power Amplifier With Input and Output Waveform Engineering

Investigation of GaN SBD temperature sensor with ultra-wide detection range from 6 K to 523 K based on n−-GaN/n+-GaN homostructure

Design of High-Power Microwave Rectifier With Wide Temperature Range

Degradation Mechanisms of AlGaN/GaN High Electron Mobility Transistors Induced by High-Energy Electron Irradiation

AI-Driven Modeling of GaN HEMT and SBD for Wireless Power Transfer Systems

Design of High-Efficiency and Broadband Power Amplifier Based on Extended Resistive-Reactive Series of Continuous Modes

Ultralow-Power Microwave Rectifier with TiN Anode GaN Schottky Barrier Diode

Integrated Polarization-Sensitive Amplification System for Multimode Polarization Imaging

Design and Fabrication of Milliwatt and Microwatt Microwave Rectifiers Based on Low Turn-On GaN Schottky Barrier Diodes

High-temperature performance of metal/n-Ga2O3/p-diamond heterojunction diode fabricated by ALD method

GaN P沟道功率器件及集成电路研究进展

All‐Optic Logical Operations Based on the Visible‐Near Infrared Bipolar Optical Response

Multioctave Power Amplifier Based on Extended Resistive-Reactive Continuous Class F Mode

Improved p-GaN/AlGaN/GaN HEMTs with magnetronsputtered AlN cap layer

High sensitive diamond Schottky diode temperature sensor based on selective grown diamond film

Design of a High-Gain Frequency Reconfigurable Antenna for Wireless Power Transmission

Vertical GaN Schottky barrier diodes with ohmic contact on N-polar by the atomic layer deposition of aluminum oxide interfacial layer

Vertical van der Waals Integrated p‐W0.09Re0.91S2 /GaN Heterojunction for Ultra‐High Detectivity UV Image Sensing

A High-Efficiency and Low-Ripple Microwave Rectifier Based on GaN Schottky Barrier Diode

Forward leakage currents in GaN p-i-n diodes

Design and Fabrication of GaN HEMT for Microwave Application

微波氮化镓肖特基二极管及其应用

GaN基互补型逻辑电路的研究进展及挑战

Novel Equivalent Current Model for GaN-Based High-Efficiency Microwave Rectification

Enhancement-mode AlGaN/GaN HEMTs with a semi-wraparound metal-insulator-semiconductor gate

MiRNA-155 Biosensors Based on AlGaN/GaN Heterojunction Field Effect Transistors With an Au-SH-RNA Probe Gate

Breathable Encapsulated Liquid Metal Foam‐Based Soft Stress Sensor

Hybrid-anode structure designed for a high-performance quasi-vertical GaN Schottky barrier diode

Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator

Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga2O3/p-diamond heterojunction

Effect of anode area on the sensing mechanism of vertical GaN Schottky barrier diode temperature sensor

Transport and Breakdown Mechanisms of Gate Leakage Current in Lattice-Matched In₀.₁₇Al₀.₈₃N/GaN HEMTs

High-Efficiency and High-Current GaN-Based Microwave Rectifier for Wireless Strain Sensing and Monitoring

Ultra-High Efficiency Microwave Rectifier Based on Patterned GaN Schottky Barrier Diode

Decreased trap density and lower current collapse in AlGaN/GaN HEMTs by adding a magnetron-sputtered AlN gate

Band alignment between NiOxand nonpolar/semipolar GaN planes for selective-area-doped termination structure

高性能GaN微波整流肖特基二极管的设计和制作

Co-design of GaN based Schottky Barrier Diode and Rectification Sensor with High Efficiency and Sensitivity

GaN基电力电子器件关键技术的进展

Temperature-Dependent Characteristics of GaN Schottky Barrier Diodes with TiN and Ni Anodes

Synthesis of thermally stable HfOxNyas gate dielectric for AlGaN/GaN heterostructure field-effect transistors

Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostructure field-effect transistors

Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate

Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature

GaN MOSFET的设计制作及其表征

高速AlGaAs/GaAs HBT D-触发器和静态分频器

GaAs基InAlAs/InGaAsMHEMT直流特性研究

1.25Gb/sInP基多量子阱激光器与HBT驱动电路的单片集成(英文)

单电源供电MSM/HEMT OEIC

1.55μm光发射OEIC技术研究

单片集成长波长光接收机

超低功耗GaAs PHEMT跨阻前置放大器

InAlAsInGaAs HEMT跨阻前置放大器的设计与实现

GaAs HBT直接耦合微波单片集成电路

AlGaN/GaN HEMT器件研究

InP/InGaAs HBT湿法化学选择腐蚀技术

WN/W难熔栅自对准增强型n沟道HFET

单片集成MSM/HEMT长波长光接收机

MCM倒装焊技术在CMOS-SEED灵巧象素中的应用研究