杨国锋｜江南大学｜学者主页

2026

一种抑制GaN HEMT栅极尖峰电压的RCD电路设计

陈飞宇，秦世清，钱乐洋，李倩茹，王博翔，杨国锋

《电源学报》

2026

S-Carboxymethyl-L-Cysteine-Functionalized AlGaN/GaN High-Electron-Mobility Transistor for Cd2+ Detection

Shi-Ming Liu, Xiao Wang, Ping Gong, Ming Guo, Jiakang Chen, Xia Zhu, Jing-Run Miao, Feng-Qiu Jiang, Tao Liu, Zhi-Wei Chen, Zhang-Cheng Liu, Yang Li, D. Yan, Lihua Bai, Guofeng Yang, Ji-Yu Zhou, Jianbo Liang, Jin-Ping Ao

IEEE Sensors Journal

DOI

2026

A Chemically Programmable Retinomorphic GaN p–n Diode for Multimode Visual Sensing

Xin Liu, Shih-Hao Fang, Wei Chen, Yang Kang, Wen-Gang Gu, Yuan-Min Luo, Dong-Yang Luo, Zhi-Xiang Gao, Zi-Xun Wang, Xudong Yang, Menglong Wang, Yong Yan, Guofeng Yang, Haiding Sun

Advances in Materials

DOI

2026

Vertical GaN Schottky Barrier Diode Based on Anode-First Process and Low-Temperature Ohmic Contact

Xiao Wang, Tian-Yun Zhu, Ping Gong, Tian-Yi He, Sen Peng, Xia Zhu, Jing-Run Miao, Feng-Qiu Jiang, Tao Liu, Zhi-Wei Chen, Zhang-Cheng Liu, Yang Li, D. Yan, Lihua Bai, Guofeng Yang, Jianbo Liang, Jin-Ping Ao

IEEE Transactions on Electron Devices

DOI

2026

Gate-tunable synaptic weight modulation in AlGaN/GaN HEMT optoelectronic synapses for neuromorphic computing

Leyang Qian, Xuekun Hong, W. Qian, Xiang-Yang Zhang, Guofeng Yang, Jun-Ge Liang, Jian Guo, Xinyi Shan

Materials Science in Semiconductor Processing

DOI

2026

NiPS3/GaN photodetector with bias‐selected photoresponse mode for reconfigurable optoelectronic logic and neuromorphic vision

Bingjie Ye, Chun-Shuang Chu, Shun-Jie Yu, Xinyi Shan, Jian Guo, Jun-Ge Liang, F. Ling, Guofeng Yang

Responsive Materials

DOI

2026

Ultraviolet‐Induced Band Engineering in Black Phosphorus/Gallium Nitride Heterojunction Toward High‐Performance Broadband Photodetection

Zhen-Yu Liu, Shih-Hao Fang, Zhi-Xiang Gao, Zhanpeng Su, Yang Kang, Muhammad Hunain Memon, Junxing Qiu, Reza Taheri Ghahrizjani, Yuchen Du, Yi-Guo Yan, Jia-Yao Li, Hao-Chen Zhang, Xu-Tao Zhang, Guofeng Yang, Jin-Shui Miao, Xiao-Qing Gong, Ren-Jie Zhou, Yong Yan, Haiding Sun

Advanced Functional Materials

DOI

2026

Sub-bandgap absorption and structural properties of selenium-hyperdoped silicon after pulsed laser annealing

N. Koval'chuk, F. Komarov, I. Parkhomenko, Guofeng Yang, O. Milchanin

Doklady of the National Academy of Sciences of Belarus

DOI

2026

β-Ga2O3 phototransistors for solar-blind detection and optical communications

Shuyao Han, Anqi Qiang, Xuekun Kong, I. Parkhomenko, F. Komarov, Guofeng Yang, Jun-Ge Liang, Xinyi Shan, Jian Guo

Applied Physics A

DOI

2026

Dual-Mode Solar-Blind Ultraviolet Imaging Application Based on β-Ga2O3 MSM Photodetector Array

Anqi Qiang, Xiao Wang, Huazhen Sun, Bingjie Ye, Xiu-Mei Zhang, I. Parkhomenko, F. Komarov, Yu Liu, Jin Wang, Guofeng Yang

IEEE Transactions on Electron Devices

DOI

2026

Leveraging defect-induced internal gain for high-performance β-Ga2O3 photodetectors on patterned sapphire substrates.

Rui Wang, Huiqin Zhao, Jie Yao, Zhi-Kuo Tao, T. Zhi, Guofeng Yang, Jun-Jun Xue, Dun-Jun Chen, Jin Wang

Optics Letters

DOI

2025

基于电流影响因子的SiC MOSFET模型建立与分析

李倩茹，钱乐洋，秦世清，陈飞宇，张向阳，杨国锋

《半导体技术》

DOI

2025

Hardware-intrinsic encrypted imaging and neuromorphic computing enabled by bias-reconfigurable AlScN/GaN heterojunction ultraviolet photodetector

Huazhen Sun, Leyang Qian, Xuekun Hong, Bingjie Ye, Anqi Qiang, Yushen Liu, I. Parkhomenko, F. Komarov, Jin Wang, Jun-Jun Xue, Xinyi Shan, Guofeng Yang

Advanced Photonics

DOI

2025

光电子器件及其应用 = Optoelectronic devices and their applications

杨国锋

《科学出版社》

2025

GaGeTe/GaN Heterostructure-Based Photodetector with Wavelength-Regulated Dual-Function of Optical Imaging and Synapse.

Bingjie Ye, Surui Li, Leyang Qian, Huazhen Sun, Jiale Zhang, Anqi Qiang, Xiu-Mei Zhang, Mingfa Peng, Yu-Shen Liu, I. Parkhomenko, F. Komarov, Xinyi Shan, Guofeng Yang

ACS Applied Materials and Interfaces

DOI

2025

Self-Powered Photodetectors Based on Ta2NiSe5/p-GaN Heterostructures for UV Imaging Applications

Jiale Zhang, Bingjie Ye, Leyang Qian, Xiang-Yang Zhang, Xi-Feng Yang, Yu-Shen Liu, I. Parkhomenko, F. Komarov, Yu Liu, Guofeng Yang

ACS Applied Electronic Materials

DOI

2025

Modeling and Suppression of Parasitic Oscillations in Enhanced‐Mode GaN HEMT Circuits

Leyang Qian, Feiyu Chen, Qianru Li, Xuekun Hong, Qi Zhang, Zhijian Xie, Guofeng Yang, Xiang-Yang Zhang, Xinyi Shan

International journal of numerical modelling

DOI

2025

Optically tunable synaptic transistors based on AlGaN/GaN heterostructure for neuromorphic vision processing

Xiao-Qin Li, Huazhen Sun, Mei Ge, Leyang Qian, Xuyang Ge, Xuekun Hong, W. Qian, Xiang-Yang Zhang, Jun-Ge Liang, Xinyi Shan, Jian Guo, Guofeng Yang

Applied Physics Letters

DOI

2025

2D/3D ZrS3/p-GaN heterostructure photodetector for dual-band and polarization-based optical information encryption

Jiale Zhang, Bingjie Ye, Xuekun Kong, Leyang Qian, Huazhen Sun, Xiang-Yang Zhang, I. Parkhomenko, F. Komarov, Jin Wang, Jun-Jun Xue, Xinyi Shan, Jun-Ge Liang, Guofeng Yang

Materials Today Nano

DOI

2025

Switching of Volatile/Non‐Volatile Photonic Synapses via Metal/Semiconductor Interface Engineering for Bio‐Inspired Sensory Processing

Zhi-Xing Gan, Yufan Gu, Xiaohui Hu, Mingchao Li, Xuefeng Fan, Jiahao Fan, Cheng-Zi Li, Yifei Yan, Liang-Liang Lu, Guofeng Yang, Fang-Jian Xing, Cihui Liu, Yun-Song Di, C. Sheng, Gangyi Zhu

Laser & Photonics Reviews

DOI

2025

Solar-blind ultraviolet β -Ga2O3 phototransistor for logic and secure optical communication applications

Anqi Qiang, Bingjie Ye, Leyang Qian, Huazhen Sun, Xiu-Mei Zhang, Yu-Shen Liu, I. Parkhomenko, F. Komarov, Xinyi Shan, Yu Liu, Guofeng Yang

Applied Physics Letters

DOI

2025

Demonstration of AlXGa1−XN Solar-Blind UV Phototransistor With Double Heterostructures and Winding Gate

Shiting Dai, Chun-Shuang Chu, Shun-Jie Yu, Bingjie Ye, Xiao Wang, Shu Yang, F. Ling, Guofeng Yang

IEEE Transactions on Electron Devices

DOI

2025

Synaptic solar-blind UV PD based on STO/AlXGa1−XN heterostructure for neuromorphic computing

Xu Qi, Shiting Dai, Chun-Shuang Chu, Shun-Jie Yu, Xiao Wang, Shu Yang, F. Ling, Guofeng Yang

Applied Physics Letters

DOI

2025

Optoelectronic properties of two-dimensional lead-free perovskite Cs3Sb2I9/InX (X = S, Se) van der Waals heterostructures

Xinyi Shan, Hongxu Liu, Bingjie Ye, Leyang Qian, Xuekun Hong, Yu-Shen Liu, I. Parkhomenko, F. Komarov, Guofeng Yang

Physica. E, Low-Dimensional systems and nanostructures

DOI

2025

Solar-Blind UV PD Based on the BTO/AlXGa1-XN Heterostructure for Imaging and Optical Communication

Xu Qi, Leyang Qian, Xuekun Hong, Bingjie Ye, Huazhang Sun, Anqi Qiang, Yu-Shen Liu, I. Parkhomenko, F. Komarov, Jun-Ge Liang, Xinyi Shan, Guofeng Yang

IEEE Transactions on Electron Devices

DOI

2025

Artificial optoelectronic synapses based on Ga2O3 metal–semiconductor–metal solar‐blind ultraviolet photodetectors with asymmetric electrodes for neuromorphic computing

Huazhen Sun, Bingjie Ye, Mei Ge, Biao Gong, Leyang Qian, I. Parkhomenko, F. Komarov, Yu Liu, Guofeng Yang

DOI

2025

Multiple exciton generation boosting over 100% quantum efficiency photoelectrochemical photodetection

Jun-Jun Xue, Xu Wang, Guanyu Xu, Xinya Tao, Tongdao Pan, Zhou-Yu Chen, Qing Cai, Peng-Fei Shao, Guofeng Yang, Zeng-Li Huang, T. Zhi, Ke Wang, Bin Liu, Dun-Jun Chen, Rong Zhang, Jin Wang

Nature Communications

DOI

2024

集成式GaN单开关管功率因数校正变换器

曹通，秦世清，何映谊，李婷，张秀梅，杨国锋，卞宝安

《重庆大学学报》

2024

基于MPPT光伏系统SIC-FT控制算法的研究

秦世清，何映谊，曹通，陈飞宇，席曦，杨国锋

《太阳能学报》

2024

AlGaN/GaN HEMT-Based MHM Ultraviolet Phototransistor With Bent-Gate Structure

Biao Gong, Mei Ge, Xiao Wang, Bingjie Ye, I. Parkhomenko, F. Komarov, Jin Wang, Jun-Jun Xue, Yu Liu, Guofeng Yang

IEEE Electron Device Letters

DOI

2024

Passive clamping driver circuit for suppressing positive and negative gate crosstalk in GaN HEMTs

Shiqing Qin, T. Cao, Feiyu Chen, Yan Gu, Jia-Ying Ying, W. Qian, N. Lu, Xiang-Yang Zhang, Guofeng Yang

Journal of Power Electronics (JPE)

DOI

2024

Boosting the Curie temperature of GaN monolayer through van der Waals heterostructures

Qian-qian Wu, Jin Wang, T. Zhi, Yan-Ling Zhuang, Zhi-Kuo Tao, Peng-Fei Shao, Qing Cai, Guofeng Yang, Jun-Jun Xue, Dun-Jun Chen, Rong Zhang

Nanotechnology

DOI

2024

Visible–ultraviolet dual-band photodetectors based on an all-inorganic CsPbCl3/p-GaN heterostructure

Bingjie Ye, Bo-Xiang Wang, Yan Gu, Jia-Rui Guo, Xiu-Mei Zhang, W. Qian, Xiang-Yang Zhang, Guofeng Yang, Zhi-Xing Gan, Yu-Shen Liu

Nanoscale Advances

DOI

2024

CsPbBr3 perovskite quantum dots/p-GaN heterojunction for ultraviolet-visible spectrum photodetectors

Yu-Shen Liu, Bingjie Ye, Yang Gao, Xi-Feng Yang, Mingfa Peng, Guofeng Yang

Applied Physics Letters

DOI

2024

Study on the effects of strain and electrostatic doping on the magnetic anisotropy of GaN/VTe2 van der waals heterostructure

Jun-Jun Xue, Wei Chen, Shanwen Hu, Zhou-Yu Chen, Haoyu Fang, T. Zhi, Peng-Fei Shao, Qing Cai, Guofeng Yang, Yan Gu, Jin Wang, Dun-Jun Chen

Nanotechnology

DOI

2024

Self-Powered GaN-Based MSM Ultraviolet Photodetector With Asymmetrical Interdigitated Structure

Biao Gong, Bingjie Ye, Yan Gu, Feng Xie, Xiu-Mei Zhang, W. Qian, Xiang-Yang Zhang, N. Lu, Guofeng Yang

IEEE Transactions on Electron Devices

DOI

2024

Achieving a High-Responsivity and Fast-Response-Speed Solar-Blind Photodetector for Underwater Optical Communication via AlGaN/AlN/GaN Heterojunction Nanowires

Jun-Jun Xue, Saisai Wang, Jiaming Tong, Guofeng Yang, I. Parkhomenko, F. Komarov, Yu Liu, Qing Cai, Jin Wang, T. Zhi

ACS Applied Electronic Materials

DOI

2024

Silicon hyperdoping using selenium and manganese ion implantation and pulsed laser annealing

Ting Wang, F. Komarov, I. Parkhomenko, Guofeng Yang, Jun-Jun Xue

Doklady of the National Academy of Sciences of Belarus

DOI

2024

Electronic Properties and Magnetism of VN/Ga2O2/VN Spin Valves

Qian-qian Wu, Jin Wang, T. Zhi, Zhi-kuo Tao, Peng-Fei Shao, Qing Cai, Guofeng Yang, Jun-Jun Xue, Dun-Jun Chen, Rong Zhang

ACS Applied Electronic Materials

DOI

2024

High-performance transistors based on monolayer all-inorganic two-dimensional halide perovskite Cs2PbI2Cl2 and its optoelectronic application

Hongxu Liu, Bo-Xiang Wang, Jiang-Cheng Wang, Bingjie Ye, I. Parkhomenko, F. Komarov, Jin Wang, Jun-Jun Xue, Yu Liu, Guofeng Yang

Journal of Applied Physics

DOI

2024

Self-Powered Ga₂O₃ MSM Solar-Blind UV PDs With Asymmetric Electrodes for Optical Communications

Biao Gong, Shiting Dai, Xiao Wang, Bingjie Ye, I. Parkhomenko, F. Komarov, Jun-Jun Xue, Yu Liu, W. Qian, Mei Ge, Guofeng Yang

IEEE Photonics Technology Letters

DOI

2024

Room-Temperature High-Performance Photodetector and Phototransistor Based on PdSe2/ZnIn2S4 Alloy Heterojunctions.

Mingchao Li, Wei Guan, Cihui Liu, Fang-Jian Xing, Yubin Zheng, Yun-Song Di, Guiyuan Cao, Shibiao Wei, Ying Wang, Guofeng Yang, Li-Yan Yu, Zhi-Xing Gan

Small

DOI

2024

Engineering Charge Separation in α-Ga2O3 Nanorod Arrays for Photoelectrochemical UV Detection

Kaicheng Xu, Zhujun Gao, Jiaming Tong, T. Zhi, Rui Wang, Shanwen Hu, Zhou-Yu Chen, Haoyu Fang, Jin Wang, Dun-Jun Chen, Guofeng Yang, Rong Zhang, Jun-Jun Xue

ACS Applied Nano Materials

DOI

2024

MSM Solar-Blind Ultraviolet Detector Incorporating Asymmetric Contact Electrodes Fabricated on AlₓGa₁–ₓN Hetero-Epilayers

Shiting Dai, Biao Gong, Xiao Wang, Bingjie Ye, I. Parkhomenko, F. Komarov, Jin Wang, Jun-Jun Xue, Yu Liu, Guofeng Yang

IEEE Transactions on Electron Devices

DOI

2023

2-Mercaptobutanedioic-Acid-Modified AlGaN/GaN High Electron Mobility Transistor With Folded Gate for Fe3+ Detection

Yan Gu, Xue Jiang, N. Lu, Jia-Rui Guo, Yu-Shen Liu, Xi-Feng Yang, W. Qian, X. Zhang, Guo-Qing Chen, Tao Tao, Guofeng Yang

IEEE Journal of the Electron Devices Society

DOI

2023

Al0.18Ga0.82N/GaN Two-Dimensional Electron Gas-Based Ultraviolet Photodetectors With Symmetrical Interdigitated Structure

Yan Gu, F. Xie, Qi-Gao Fan, Xue Jiang, Jia-Rui Guo, Zhijian Xie, Qi Zhang, Xiumei Zhang, Guo-Qing Chen, Guofeng Yang

IEEE Transactions on Electron Devices

DOI

2023

High-Performance InGaN/GaN Photodetectors With 30-Period Multiple Quantum Wells

Feng Xie, Yu-Fei Yao, Yan Gu, Zhi-Jia Hu, Benli Yu, Guofeng Yang

IEEE Transactions on Electron Devices

DOI

2023

UV–visible dual-band photodetector based on an all-inorganic Mn-doped CsPbCl3/GaN type-II heterojunction

Hongxu Liu, Bingjie Ye, Yan Gu, Yu-Shen Liu, Xi-Feng Yang, Feng Xie, Xiu-Mei Zhang, W. Qian, Xiang-Yang Zhang, N. Lu, Guofeng Yang

Applied Physics Letters

DOI

2023

Self-powered AlGaN-based MSM solar-blind ultraviolet photodetectors with high Al-content AlxGa1−xN/AlyGa1−yN asymmetrical heterostructure

Yan Gu, Jia-Rui Guo, Bingjie Ye, Xi-Feng Yang, Feng Xie, W. Qian, Xiang-Yang Zhang, N. Lu, Yu-Shen Liu, Guofeng Yang

Applied Physics Letters

DOI

2023

Spin valve effect in CrN/GaN van der Waals heterostructures

Jun-Jun Xue, Wei Chen, Tao Tao, T. Zhi, Peng-Fei Shao, Qing Cai, Guofeng Yang, Jin Wang, Dun-Jun Chen, Rong Zhang

Journal of Applied Physics

DOI

2023

Broadband Photodetector for Ultraviolet to Visible Wavelengths Based on the BA2PbI4/GaN Heterostructure.

Jia-Rui Guo, Bingjie Ye, Yan Gu, Yu-Shen Liu, Xi-Feng Yang, Feng Xie, Xiu-Mei Zhang, W. Qian, Xiang-Yang Zhang, N. Lu, Guofeng Yang

ACS Applied Materials and Interfaces

DOI

2023

Polarization Assisted Interdigital AlGaN/GaN Heterostructure Ultraviolet Photodetectors

Jia-Rui Guo, Yan Gu, Yushen Liu, Fang Liang, Wei Chen, F. Xie, Xi-Feng Yang, W. Qian, X. Zhang, Guo-Qing Chen, Guofeng Yang

IEEE Transactions on Electron Devices

DOI

2023

A highly sensitive sensor for carcinoembryonic antigen based on AlGaN/GaN high-electron-mobility transistors

WeiSun Huang, Shengjie Hu, Xue Jiang, Y. Weng, Yu Liu, Xue Tang, Guofeng Yang, Xun Wang, N. Lu

Nanotechnology

DOI

2023

Lead ion detection using glutathione-functionalized aluminum gallium nitride/gallium nitride high-electron-mobility transistors

Xiaohu Dong, Xue Jiang, Yan Gu, Chun-Lei Wei, Zhijian Xie, Qi Zhang, W. Qian, X. Zhang, Chun Zhu, N. Lu, Guo-Qing Chen, Guofeng Yang

Current applied physics

DOI

2023

Metal-semiconductor-metal solar-blind ultraviolet photodetector based on Al0.55Ga0.45N/Al0.4Ga0.6N/Al0.65Ga0.35N heterostructures.

Shiting Dai, Yan Gu, Jia-Rui Guo, F. Xie, Yushen Liu, Xi-Feng Yang, Xiumei Zhang, X. Zhang, W. Qian, Guofeng Yang

Optics Express

DOI

2022

L-Cysteine Functionalized Al0.18Ga0.82N/GaN High Electron Mobility Transistor Sensor for Copper Ion Detection

Xue Jiang, F. Xie, Yan Gu, Xiaohu Dong, Xiumei Zhang, Chun Zhu, W. Qian, N. Lu, Guo-Qing Chen, Guofeng Yang

IEEE Transactions on Electron Devices

DOI

2022

Dual-wavelength photodetector based on layered WSe2/n-GaN van der Waals heterostructure

Bingjie Ye, Yushen Liu, F. Xie, Xi-Feng Yang, Yan Gu, Xiumei Zhang, W. Qian, Chun Zhu, N. Lu, Guo-Qing Chen, Guofeng Yang

Materials Today Nano

DOI

2022

Improved performance of AlGaN solar-blind avalanche photodiodes with dual multiplication layers

Jia-Rui Guo, F. Xie, Yan Gu, Xue Jiang, Chun-Lei Wei, Zhijian Xie, Qi Zhang, W. Qian, Chun Zhu, Xiumei Zhang, Guofeng Yang

Optical and quantum electronics

DOI

2022

Comparison of functionalized AlGaN/GaN HEMT sensor for the detection of various heavy metal ions

Xue Jiang, Chun-Lei Wei, Yan Gu, Xiaohu Dong, Zhijian Xie, Qi Zhang, Chun Zhu, W. Qian, N. Lu, Guo-Qing Chen, Guofeng Yang

Applied Physics A

DOI

2022

High-Temperature Forward and Reverse Current Transport Mechanisms of AlGaN-Based Solar-Blind UV Photodetector

Yan Gu, Qi-Gao Fan, Yushen Liu, Xi-Feng Yang, Xue Jiang, Jia-Rui Guo, Xiumei Zhang, N. Lu, Guoqing Chen, Guofeng Yang

IEEE Transactions on Electron Devices

DOI

2022

Effect of C$_{\text{44}}$H$_{\text{30}}$N$_{\text{4}}$O$_{\text{4}}$ Surface Modification on the Performance of Al$_{\text{0.6}}$Ga$_{\text{0.4}}$N MSM Photodetectors

F. Xie, Yu-Hang Li, Yushen Liu, Xi-Feng Yang, Xiumei Zhang, Guofeng Yang

IEEE Transactions on Electron Devices

DOI

2022

Quantum transport of short-gate MOSFETs based on monolayer MoSi2N4.

Bingjie Ye, Xue Jiang, Yan Gu, Guofeng Yang, Yushen Liu, Huiqin Zhao, Xi-Feng Yang, Chun-Lei Wei, Xiumei Zhang, N. Lu

Physical Chemistry, Chemical Physics - PCCP

DOI

2022

Ultra-low dark current back-illuminated AlGaN-based solar-blind ultraviolet photodetectors with broad spectral response

Feng Xie, Yan Gu, Zhijia Hu, Benli Yu, Guofeng Yang

Optics Express

DOI

2021

基于十八硫醇修饰的Al0.6Ga0.4N MSM光电探测器研究

Yu-Hang Li, Yan Gu, Jian-Wei Chen, Yu-Fei Yao, Xue Jiang, N. Lu, Xiumei Zhang, Guofeng Yang, Bao-An Bian

Acta Photonica Sinica

DOI

2021

Carrier transport and photoconductive gain mechanisms of AlGaN MSM photodetectors with high Al Content

代志诚，刘玉申，杨国锋，谢峰，朱纯，谷燕，陆乃彦，樊启高，丁宇，李宇航，虞瀛舟，张秀梅

Chinese Optics Letters

2021

Quantum Transport of Sub-10 nm Monolayer WGe2N4 Transistors

Huiqin Zhao, Guofeng Yang, Yushen Liu, Xi-Feng Yang, Yan Gu, Chun-Lei Wei, Zhijian Xie, Qi Zhang, Bao-An Bian, Xiumei Zhang, Xin-Xia Huo, N. Lu

ACS Applied Electronic Materials

DOI

2021

Enhanced performance of high Al-content AlGaN MSM photodetectors by electrode modification using hexadecanethiol

Yuhang Li, Yushen Liu, Guofeng Yang, Baoan Bian, Jin Wang, Yan Gu, Qigao Fan, Yu Ding, Xiu‐Mei Zhang, Naiyan Lu, Guoqing Chen

Optics Express

DOI

2021

3D fluorescence confocal microscopy of InGaN/GaN multiple quantum well nanorods from a light absorption perspective

Yan Gu, Yu shen Liu, Guofeng Yang, Feng Xie, Chun Xiang Zhu, Yingzhou Yu, Xiu‐Mei Zhang, Naiyan Lu, Yueke Wang, Guoqing Chen

Nanoscale Advances

DOI

2021

Multiuser 4×10 Gb/s bidirectional transmission with wavelength conversion using a single SOA

Guiyong Xu, Lifa Hu, Shixun Zhang, Guofeng Yang, Guang Yong Chu

Optical Engineering

DOI

2020

具有高增益的AlGaN日盲紫外雪崩光电二极管

代志诚，谷燕，张秀梅，陆乃彦，杨国锋

《光学精密工程》

2019

Janus Ga2SeTe: A Promising Candidate for Highly Efficient Solar Cells

Jin Wang, Hui Guo, Junjun Xue, Dunjun Chen, Guofeng Yang, Bin Liu, Hai Lu, Rong Zhang, Yi Zheng

Solar RRL

DOI

2018

Epitaxial growth and interfacial property of monolayer MoS 2 on gallium nitride

Pengfei Yan, Qianqian Tian, Guofeng Yang, Yuyan Weng, Yixin Zhang, Jin Wang, Feng Xie, Naiyan Lu

RSC Advances

DOI

2017

图形化蓝宝石衬底掺杂渐变GaN肖特基型紫外探测器

翟阳，牟文杰，闫大为，杨国锋，蒋敏峰，肖少庆，顾晓峰

《固体电子学研究与进展》

2017

AlGaN solar-blind avalanche photodiodes with AlInN/AlGaN distributed Bragg reflectors

Chujun Yao, Xuan-Chao Ye, Rui Sun, Guofeng Yang, Jin Wang, Yanan Lu, Peng-Fei Yan, Jin-Tao Cao

Applied Physics A

DOI

2016

White-light emission from InGaN/GaN quantum well microrings grown by selective area epitaxy

Guofeng Yang, Peng Chen, Shumei Gao, Guoqing Chen, Rong Zhang, Youdou Zheng

Photonics Research

2016

Polarization engineering of back-illuminated separate absorption and multiplication AlGaN avalanche photodiodes

Guofeng Yang, Fu-Xue Wang

Applied Physics A

DOI

2015

p型InGaN/GaN超晶格N面GaN基LED的光电特性

姚楚君，杨国锋，孙锐，许桂婷，李月靖，蔡乐晟

《半导体技术》

2015

玻璃衬底上制备GaN薄膜的研究进展

汪金，张卿，杨国锋，高淑梅，李果华

《半导体技术》

2015

图形化衬底对GaN基LED电流与发光特性的影响

李丽莎，闫大为，管婕，杨国锋，王福学，肖少庆，顾晓峰

《固体电子学研究与进展》

2015

图形化蓝宝石衬底结构对GaN基LED发光性能的影响

佟玉莹，杨国锋，赵建利，张卿，汪金

《光电子·激光》

DOI

2015

Analysis of 270/290/330-nm AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With Different Al Content in Quantum Wells and Barriers

Guofeng Yang, Qing Zhang, Jin Wang, Shumei Gao, R. Zhang, You-Liao Zheng

IEEE Photonics Journal

DOI

2015

Investigation of N-face AlGaN ultraviolet light-emitting diodes with composition-varying AlGaN electron blocking layer

Chujun Yao, Guofeng Yang, Yue-Jing Li, Rui Sun, Qing Zhang, Jin Wang, S.-M. Gao

Optical and quantum electronics

DOI

2015

Selective area epitaxy of monolithic white-light InGaN/GaN quantum well microstripes with dual color emission

Yuejing Li, Y.Y. Tong, Guofeng Yang, Chujun Yao, Rui Sun, Lesheng Cai, Guiting Xu, Jin Wang, Qing Zhang, Xuanchao Ye, Mengting Wu, Zhiqin Wen

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

DOI

2014

GaN-based p–i–n ultraviolet photodetectors with a thin p-type GaN layer on patterned sapphire substrates

Hongjuan Huang Hongjuan Huang, Dawei Yan, Guosheng Wang Guosheng Wang, Feng Xie, Guofeng Yang, Shaoqing Xiao, Xiaofeng Gu

Chinese Optics Letters

DOI

2014

Electron-leakage-related low-temperature light emission efficiency behavior in GaN-based blue light-emitting diodes

闫大为，李丽莎，任舰，王福学，杨国锋，肖少庆，顾晓峰

Journal of Semiconductors

2014

GaN纳米柱的量子效率研究

李扬扬，陈鹏，蒋府龙，杨国锋，刘斌，谢自立，修向前，韩平，赵红，华雪梅，施毅，张荣，郑有炓

《南京大学学报(自然科学)》

2014

InGaN/GaN超晶格垒层用于InGaN发光二极管发光增强研究

杨国锋，朱华新，郭颖，李果华，高淑梅

《激光与光电子学进展》

2014

GaN{11-22}半极性面上生长InGaN/GaN多量子阱的研究

杨国锋，朱华新，郭颖，李果华，高淑梅

《激光与光电子学进展》

2014

Design analysis of back-illuminated separated absorption and multiplication AlGaN APDs with polarization field

Guofeng Yang, Feng Xie, Junjun Xue, Dawei Yan, F. X. Wang

Optical and Quantum Electronics

DOI

2013

半极性面上生长InGaN/GaN多量子阱结构在LED制备中的应用

杨国锋，李果华，高淑梅

《电子元件与材料》

2013

InGaN/GaN低维量子阱结构的制备及其发光性质研究

杨国锋

《南京大学》

2011

宽带隙半导体材料光电性能的测试

郭媛，陈鹏，孟庆芳，于治国，杨国锋，张荣，郑有炓

《半导体技术》

2011

深能级对白光LED的电致发光和I-V特性的影响

孟庆芳，陈鹏，郭媛，于治国，杨国锋，张荣，郑有炓

《半导体技术》

2011

利用Ni纳米岛模板制备半极性晶面GaN纳米柱

杨国锋，陈鹏，于治国，刘斌，谢自力，修向前，韩平，赵红，华雪梅，张荣，郑有炓

《半导体技术》

精选作品

期刊论文

一种抑制GaN HEMT栅极尖峰电压的RCD电路设计

S-Carboxymethyl-L-Cysteine-Functionalized AlGaN/GaN High-Electron-Mobility Transistor for Cd2+ Detection

A Chemically Programmable Retinomorphic GaN p–n Diode for Multimode Visual Sensing

Vertical GaN Schottky Barrier Diode Based on Anode-First Process and Low-Temperature Ohmic Contact

Gate-tunable synaptic weight modulation in AlGaN/GaN HEMT optoelectronic synapses for neuromorphic computing

NiPS3/GaN photodetector with bias‐selected photoresponse mode for reconfigurable optoelectronic logic and neuromorphic vision

Ultraviolet‐Induced Band Engineering in Black Phosphorus/Gallium Nitride Heterojunction Toward High‐Performance Broadband Photodetection

Sub-bandgap absorption and structural properties of selenium-hyperdoped silicon after pulsed laser annealing

β-Ga2O3 phototransistors for solar-blind detection and optical communications

Dual-Mode Solar-Blind Ultraviolet Imaging Application Based on β-Ga2O3 MSM Photodetector Array

Leveraging defect-induced internal gain for high-performance β-Ga2O3 photodetectors on patterned sapphire substrates.

基于电流影响因子的SiC MOSFET模型建立与分析

Hardware-intrinsic encrypted imaging and neuromorphic computing enabled by bias-reconfigurable AlScN/GaN heterojunction ultraviolet photodetector

光电子器件及其应用 = Optoelectronic devices and their applications

GaGeTe/GaN Heterostructure-Based Photodetector with Wavelength-Regulated Dual-Function of Optical Imaging and Synapse.

Self-Powered Photodetectors Based on Ta2NiSe5/p-GaN Heterostructures for UV Imaging Applications

Modeling and Suppression of Parasitic Oscillations in Enhanced‐Mode GaN HEMT Circuits

Optically tunable synaptic transistors based on AlGaN/GaN heterostructure for neuromorphic vision processing

2D/3D ZrS3/p-GaN heterostructure photodetector for dual-band and polarization-based optical information encryption

Switching of Volatile/Non‐Volatile Photonic Synapses via Metal/Semiconductor Interface Engineering for Bio‐Inspired Sensory Processing

Solar-blind ultraviolet β -Ga2O3 phototransistor for logic and secure optical communication applications

Demonstration of AlXGa1−XN Solar-Blind UV Phototransistor With Double Heterostructures and Winding Gate

Synaptic solar-blind UV PD based on STO/AlXGa1−XN heterostructure for neuromorphic computing

Optoelectronic properties of two-dimensional lead-free perovskite Cs3Sb2I9/InX (X = S, Se) van der Waals heterostructures

Solar-Blind UV PD Based on the BTO/AlXGa1-XN Heterostructure for Imaging and Optical Communication

Artificial optoelectronic synapses based on Ga2O3 metal–semiconductor–metal solar‐blind ultraviolet photodetectors with asymmetric electrodes for neuromorphic computing

Multiple exciton generation boosting over 100% quantum efficiency photoelectrochemical photodetection

集成式GaN单开关管功率因数校正变换器

基于MPPT光伏系统SIC-FT控制算法的研究

AlGaN/GaN HEMT-Based MHM Ultraviolet Phototransistor With Bent-Gate Structure

Passive clamping driver circuit for suppressing positive and negative gate crosstalk in GaN HEMTs

Boosting the Curie temperature of GaN monolayer through van der Waals heterostructures

Visible–ultraviolet dual-band photodetectors based on an all-inorganic CsPbCl3/p-GaN heterostructure

CsPbBr3 perovskite quantum dots/p-GaN heterojunction for ultraviolet-visible spectrum photodetectors

Study on the effects of strain and electrostatic doping on the magnetic anisotropy of GaN/VTe2 van der waals heterostructure

Self-Powered GaN-Based MSM Ultraviolet Photodetector With Asymmetrical Interdigitated Structure

Achieving a High-Responsivity and Fast-Response-Speed Solar-Blind Photodetector for Underwater Optical Communication via AlGaN/AlN/GaN Heterojunction Nanowires

Silicon hyperdoping using selenium and manganese ion implantation and pulsed laser annealing

Electronic Properties and Magnetism of VN/Ga2O2/VN Spin Valves

High-performance transistors based on monolayer all-inorganic two-dimensional halide perovskite Cs2PbI2Cl2 and its optoelectronic application

Self-Powered Ga₂O₃ MSM Solar-Blind UV PDs With Asymmetric Electrodes for Optical Communications

Room-Temperature High-Performance Photodetector and Phototransistor Based on PdSe2/ZnIn2S4 Alloy Heterojunctions.

Engineering Charge Separation in α-Ga2O3 Nanorod Arrays for Photoelectrochemical UV Detection

MSM Solar-Blind Ultraviolet Detector Incorporating Asymmetric Contact Electrodes Fabricated on AlₓGa₁–ₓN Hetero-Epilayers

2-Mercaptobutanedioic-Acid-Modified AlGaN/GaN High Electron Mobility Transistor With Folded Gate for Fe3+ Detection

Al0.18Ga0.82N/GaN Two-Dimensional Electron Gas-Based Ultraviolet Photodetectors With Symmetrical Interdigitated Structure

High-Performance InGaN/GaN Photodetectors With 30-Period Multiple Quantum Wells

UV–visible dual-band photodetector based on an all-inorganic Mn-doped CsPbCl3/GaN type-II heterojunction

Self-powered AlGaN-based MSM solar-blind ultraviolet photodetectors with high Al-content AlxGa1−xN/AlyGa1−yN asymmetrical heterostructure

Spin valve effect in CrN/GaN van der Waals heterostructures

Broadband Photodetector for Ultraviolet to Visible Wavelengths Based on the BA2PbI4/GaN Heterostructure.

Polarization Assisted Interdigital AlGaN/GaN Heterostructure Ultraviolet Photodetectors

A highly sensitive sensor for carcinoembryonic antigen based on AlGaN/GaN high-electron-mobility transistors

Lead ion detection using glutathione-functionalized aluminum gallium nitride/gallium nitride high-electron-mobility transistors

Metal-semiconductor-metal solar-blind ultraviolet photodetector based on Al0.55Ga0.45N/Al0.4Ga0.6N/Al0.65Ga0.35N heterostructures.

L-Cysteine Functionalized Al0.18Ga0.82N/GaN High Electron Mobility Transistor Sensor for Copper Ion Detection

Dual-wavelength photodetector based on layered WSe2/n-GaN van der Waals heterostructure

Improved performance of AlGaN solar-blind avalanche photodiodes with dual multiplication layers

Comparison of functionalized AlGaN/GaN HEMT sensor for the detection of various heavy metal ions

High-Temperature Forward and Reverse Current Transport Mechanisms of AlGaN-Based Solar-Blind UV Photodetector

Effect of C$_{\text{44}}$H$_{\text{30}}$N$_{\text{4}}$O$_{\text{4}}$ Surface Modification on the Performance of Al$_{\text{0.6}}$Ga$_{\text{0.4}}$N MSM Photodetectors

Quantum transport of short-gate MOSFETs based on monolayer MoSi2N4.

Ultra-low dark current back-illuminated AlGaN-based solar-blind ultraviolet photodetectors with broad spectral response

基于十八硫醇修饰的Al0.6Ga0.4N MSM光电探测器研究

Carrier transport and photoconductive gain mechanisms of AlGaN MSM photodetectors with high Al Content

Quantum Transport of Sub-10 nm Monolayer WGe2N4 Transistors

Enhanced performance of high Al-content AlGaN MSM photodetectors by electrode modification using hexadecanethiol

3D fluorescence confocal microscopy of InGaN/GaN multiple quantum well nanorods from a light absorption perspective

Multiuser 4×10 Gb/s bidirectional transmission with wavelength conversion using a single SOA

具有高增益的AlGaN日盲紫外雪崩光电二极管

Janus Ga2SeTe: A Promising Candidate for Highly Efficient Solar Cells

Epitaxial growth and interfacial property of monolayer MoS 2 on gallium nitride

图形化蓝宝石衬底掺杂渐变GaN肖特基型紫外探测器

AlGaN solar-blind avalanche photodiodes with AlInN/AlGaN distributed Bragg reflectors

White-light emission from InGaN/GaN quantum well microrings grown by selective area epitaxy

Polarization engineering of back-illuminated separate absorption and multiplication AlGaN avalanche photodiodes

p型InGaN/GaN超晶格N面GaN基LED的光电特性

玻璃衬底上制备GaN薄膜的研究进展