DOI

2022

Yu-Li He, Guang Zheng, Xiaohan Wu, Wen-Jun Liu, David Wei Zhang, Shi‐Jin Ding

Nanoscale Advances

DOI

2021

Xiaolin Wang, Yan Shao, Xiaohan Wu, Meina Zhang, Lingkai Li, Wen-Jun Liu, David Wei Zhang, Shi‐Jin Ding

RSC Advances

DOI

2019

Bao Hu Zhu, Wenjun Liu, Lei Wei, David Wei Zhang, Anquan Jiang, Shi‐Jin Ding

Journal of Applied Physics

DOI

2014

Journal of Semiconductors

2012

石墨烯基红外探测器的高k栅氧集成

周鹏，魏红强，孙清清，叶立，陈琳，吴东平，丁士进，张卫

《红外与毫米波学报》

2012

Pt纳米颗粒辅助化学刻蚀重掺杂p型单晶硅研究

朱宝，李连杰，丁士进，张卫

《半导体技术》

2012

IEEE Electron Device Letters

DOI

2010

NiOx阻变存储器性能增强方法及相关机理研究

顾晶晶，陈琳，徐岩，孙清清，丁士进，张卫

《复旦学报(自然科学版)》

2010

《材料研究学报》

2009

高介电常数HfO2栅介质的制备及性能

薛原，徐赛生，董琳，丁士进，张卫

《半导体技术》

2009

Qingqing Sun, Dong Lin, Yu Shi, Han Liu, Shi‐Jin Ding, David Wei Zhang

Applied Physics Letters

DOI

2007

Ding Shi-Jin, Yujian Huang, Huang Yue, Pan Shao-Hui, Wei Zhang, Li-Kang Wang

Chinese Physics

DOI

2006

原子层淀积Al2O3薄膜的热稳定性研究

卢红亮，徐敏，丁士进，任杰，张卫

《无机材料学报》

2006

Wei Zhang, Wang Peng-fei, Ding Shi-Jin, Wang Ji‐Tao, Lee William Wei

A Mirror-Gate SONOS Memory with Program Operation by Hot Carrier Injection

Improvement on Gate Disturb for SONOS Memory Via Tuning Nitrogen-Oxygen Ratio of ONO Dielectric Layer

Ultrathin Oxide Insertion-Induced Phase Modulation in ZrO 2 Thin Films for Antiferroelectric Energy Storage

Nanolaminated Structural Design of PEALD InAlO TFTs for Optimizing Mobility and Stability

Single-transistor spectrometer via Burstein–Moss absorption edge modulation in compound semiconductors

Multi‐Timescale In‐Sensor Reservoir Computing With Composition‐Engineered InSnO Optoelectronic Synaptic Transistors

钌在纳米尺度集成电路互连中的应用与挑战

3-D Mirror-Bit SONOS Memory Device with a Vertical-Channel Select Gate Transistor

Zirconium‐Rich Strategy in Ultrathin Hf0.5Zr0.5O2 toward Back‐End‐of‐Line‐Compatible Ferroelectric Random Access Memory

Enhanced memory window and reliability of α-IGZO FeFET enabled by atomic-layer-deposited HfO2 interfacial layer

Performance Optimization of Short-Channel Top-Gate Ultrathin InSnO Thin-Film Transistor With Gate Dielectric Engineering

Impact of oxygen plasma pulse time on atomic-layer-deposited ZrO2 antiferroelectric energy storage capacitors

Enhanced polarization switching and reliability in BEOL-compatible HZO/ZrO2/HZO stack under low-voltage operation

Fluorine-Treated Top-Gate InAlZnO TFT for 2T0C DRAM With Long Data Retention at V hold = 0 V

High-speed/reliability multilevel FeFET memory with atomic-layer-deposited TiO 2 channel and HZO ferroelectric

Deep Learning‐Enabled Self‐Powered Stretchable Triboelectric Sensor Array for Intelligent Posture Monitoring and Regulation

Back-End-of-Line Compatible Hf0.5Zr0.5O2 Ferroelectric Devices Enabled by Microwave Annealing

High Performance FeFET with α-IGZO Channel Enabled by Atomic-Layer-Deposited HfO2 Interfacial Layer

Effects of Al doping concentration and top electrode on the ferroelectricity of Al-doped HfO2 thin films

High performance 2T0C DRAM cells based on atomic-layer-deposited InAlZnO FETs

Atomic-Layer-Deposited In–Sn–O Thin-Film Transistors With Robust Thermal Stability at 400 °C and Downscaling of Channel

Atomic-Layer-Deposited Ultrathin InAlZnO FETs-Based 2T0C DRAM Cells With Long Data Retention and Multilevel Storage

Enhanced Ferroelectricity and Reliability in Sub-6 nm Ferroelectric Hf0.5Zr0.5O2/ZrO2/Hf0.5Zr0.5O2 Stack Film Compatible with BEOL Process

High performance and nearly wake-up free Hf0.5Zr0.5O2 ferroelectric capacitor realized by middle layer strategy with BEOL compatibility

Plasma-enhanced atomic layer deposition of Sn-doped indium oxide semiconductor nano-films for thin-film transistors

Graded-Band-Gap Zinc–Tin Oxide Thin-Film Transistors with a Vertically Stacked Structure for Wavelength-Selective Photodetection

Back-End of Line Compatible Hf0.5Zr0.5O2/ZrO2/Hf0.5Zr0.5O2 Stack Achieving 2Pr of 39.6 μC/cm2 and Endurance Exceeding 1010 Cycles Under Low-Voltage Operation

Back-End of Line Compatible Hf0.5Zr0.5O2 With ZrO2 Seed Layer for Enhanced Ferroelectricity

Improvement of Voltage Linearity and Leakage Current of MIM Capacitors With Atomic Layer Deposited Ti-Doped ZrO 2 Insulators

Plasma-Enhanced Atomic Layer-Deposited Ti,Si-Doped ZrO 2 Antiferroelectric Films for Energy Storage Capacitors

High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf0.5Zr0.5O2/Al-Doped Hf0.25Zr0.75O2 Nanofilms as Dielectrics

Flexible Microspectrometers Based on Printed Perovskite Pixels with Graded Bandgaps

Performance improvement of Hf0.45Zr0.55O x ferroelectric field effect transistor memory with ultrathin Al–O bonds-modified InO x channels

High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO2 heterojunction charge trapping stack

非晶碳薄膜在芯片制程中作为硬掩模应用的特性研究

Mark Damage Phenomenon Caused by Superimposed CMP Dishing on Large-Area STI Regions

High Performance (Vth ~ 0 V, SS ~ 69 mV/dec, IOn/IOff ~ 1010) Thin-Film Transistors Using Ultrathin Indium Oxide Channel and SiO2 Passivation

Gate-Modulated High-Response Field-Effect Transistor-Type Gas Sensor Based on the MoS2/Metal–Organic Framework Heterostructure

Flexible Perovskite and Organic Semiconductor Heterojunction Devices for Tunable Band-Selective Photodetection

Spectrum Reconstruction with Filter-Free Photodetectors Based on Graded-Band-Gap Perovskite Quantum Dot Heterojunctions

Power-Efficient Gas-Sensing and Synaptic Diodes Based on Lateral Pentacene/a-IGZO PN Junctions

Photoelectric Logic and In Situ Memory Transistors with Stepped Floating Gates of Perovskite Quantum Dots

Superhigh energy storage density on-chip capacitors with ferroelectric Hf 0.5 Zr 0.5 O 2 /antiferroelectric Hf 0.25 Zr 0.75 O 2 bilayer nanofilms fabricated by plasma-enhanced atomic layer deposition

用于神经形态计算的具有可调功能的浮栅光敏突触晶体管（英文）

High-Performance a-IGZO TFT Fabricated With Ultralow Thermal Budget via Microwave Annealing

Low Thermal Budget Fabrication and Performance Comparison of MFM Capacitors With Thermal and Plasma-Enhanced Atomic Layer Deposited Hf0.45Zr0.55O x Ferroelectrics

High-Performance Flexible Gas Sensors Based on Layer-by-Layer Assembled Polythiophene Thin Films

Flexible and Filter‐Free Color‐Imaging Sensors with Multicomponent Perovskites Deposited Using Enhanced Vapor Technology

Hafnium Oxide‐Based Ferroelectric Devices for Computing‐in‐Memory Applications

Energy-efficient flexible photoelectric device with 2D/0D hybrid structure for bio-inspired artificial heterosynapse application

Flexible boron nitride-based memristor for in situ digital and analogue neuromorphic computing applications

Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels*

Band Alignment at the Al2O3/β-Ga2O3 Interface with CHF3 Treatment*

Floating-gate photosensitive synaptic transistors with tunable functions for neuromorphic computing

High-bandwidth light inputting multilevel photoelectric memory based on thin-film transistor with a floating gate of CsPbBr 3 /CsPbI 3 blend quantum dots

Flexible 3D memristor array for binary storage and multi‐states neuromorphic computing applications

Preparation and characterization of SnO films via reactive sputtering for ambipolar thin-film transistor applications

Spectrum projection with a bandgap-gradient perovskite cell for colour perception

Forming-free flexible memristor with multilevel storage for neuromorphic computing by full PVD technique

Plasma-Enhanced Atomic Layer Deposition of Low Resistivity and Ultrathin Manganese Oxynitride Films with Excellent Resistance to Copper Diffusion

Atomic layer deposited 2D MoS2 atomic crystals: from material to circuit

Wearable Heterosynapses: Ultralow Power Wearable Heterosynapse with Photoelectric Synergistic Modulation (Adv. Sci. 8/2020)

Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors

Three-Dimensional Nanoscale Flexible Memristor Networks with Ultralow Power for Information Transmission and Processing Application

Ultralow Power Wearable Heterosynapse with Photoelectric Synergistic Modulation

Superior Atomic Layer Deposition Technology for Amorphous Oxide Semiconductor Thin-Film Transistor Memory Devices

Room-temperature developed flexible biomemristor with ultralow switching voltage for array learning

Light response behaviors of amorphous In–Ga–Zn–O thin-film transistors via in situ interfacial hydrogen doping modulation

TaN薄膜的等离子体增强原子层沉积及其抗Cu扩散性能

Flexible Femtojoule Energy-Consumption In-Ga-Zn-O Synaptic Transistors With Extensively Tunable Memory Time

The effect of NH 3 plasma pulse time on atomic layer-deposited TiN films using tetrakis-(dimethylamino) titanium as a metal precursor

Atomic Layer-Deposited HfAlOx-Based RRAM with Low Operating Voltage for Computing In-Memory Applications

Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation

Voltage-Polarity Dependent Programming Behaviors of Amorphous In–Ga–Zn–O Thin-Film Transistor Memory with an Atomic-Layer-Deposited ZnO Charge Trapping Layer

Multilevel memory and synaptic characteristics of a-IGZO thin-film transistor with atomic layer–deposited Al 2 O 3 /ZnO/Al 2 O 3 stack layers

Investigation of energy band at atomic layer deposited AZO/β-Ga2O3 ($$ \overline{2}01 $$) heterojunctions

Correlation between the formation of particle defects on sputtered Cu seed layers and Cu targets

Investigation of Nitridation on the Band Alignment at MoS2/HfO2 Interfaces