吴征远｜复旦大学｜学者主页

2026

用于背面供电网络的纯钌n-TSV加工与极致全干法SOI晶圆减薄技术（英文）

Biao Wang, Feifeng Huang, Qiancheng Wang, Zhao Chen, Hongbin Chen, Quan Wang, Qiu Shao, Yiqin Chen, Zhengyuan Wu, Bo Feng, Ming Ji, Huigao Duan

Engineering

2026

A high-performance, self-powered β-Ga 2 O 3 asymmetric Schottky barrier deep-ultraviolet photodiode

Wei Wang, Chenxing Liu, Zhengyuan Wu, Duanyang Chen, Ning Jia, Qinglin Sai, Daoyou Guo, Xin Dong, Kelvin H. L. Zhang, Hongji Qi, Weihua Tang, Zhilai Fang

Journal of Materials Chemistry C

DOI

2026

An integrated model for predicting the response, selectivity, and response/recovery time of composite gas sensors

Yushi Wang, Chenxing Liu, Yating Feng, Zhengyuan Wu, Zhilai Fang

Physical Chemistry Chemical Physics

DOI

2026

Owl‐Inspired Neuromorphic Vision Sensor with Highly‐Sensitive Ultraweak Deep‐Ultraviolet Light Detection in Dim Environments

Zhao-Ying Xi, Yu Liu, Sihan Yan, Jia-Han Zhang, Min Li, Shulin Sha, Chao-Fan Wu, Zhengyuan Wu, Shan Li, Xue-Qiang Ji, Shaohui Zhang, Dao-You Guo, Y. Li, Ying-Tang Zhou, Ming-Ming Jiang, Zhi-Lai Fang, Wei-Hua Tang, Zeng Liu

Advanced Functional Materials

DOI

2025

Generalized model-driven design and fabrication of ultrasensitive and ultrafast β-Ga2O3/SnO2 ethanol gas sensors

Yushi Wang, Chenxing Liu, Hongchao Zhai, Zhengyuan Wu, Daoyou Guo, Weihua Tang, Junyong Kang, Junhao Chu, Zhilai Fang

Materials Today Physics

DOI

2025

Photomultiplication‐Type β‐Ga2O3 Solar‐Blind Photodetector with Excellent Capability of Weak Signal Detection and Anti‐Interference DUV Imaging

Chenxing Liu, Yushi Wang, Hongchao Zhai, Zhengyuan Wu, Daoyou Guo, Xin Dong, Jianlu Wang, Weihua Tang, Junyong Kang, Junhao Chu, Zhilai Fang

Advanced Optical Materials

DOI

2025

Low-power optoelectronic synaptic devices with ZnMgO in deep-ultraviolet encryption computation

Jing-Yang Li, Kai Chen, Chao Wu, Fengmin Wu, Shan Li, Zhengyuan Wu, Weihua Tang, Zhi-Lai Fang, Dao-You Guo

Applied Physics Letters

DOI

2025

High Responsivity, Ultra-flexible, Self-driven Solar-blind Fibrous Photoelectrochemical Detector for Seawater Antibiotic Detection

Gang Wu, Kai Chen, Yizhou Ni, Chao Wu, Jinsong Liu, Hai-Zheng Hu, Xuehua Zhang, Shun-Li Wang, Fengmin Wu, Zhengyuan Wu, Dao-You Guo

Materials today physics

DOI

2025

Energy Band Modulation and Solar‐Blind Photoresponse Extension Based on (SnxGa1−x)2O3

Chihao Ji, Jinyi Pan, Jun Yang, Xinjiang Zhang, Ranhong Wu, Mingshan Zheng, Jun Wang, Kai Chen, Hai-Zheng Hu, Shan Li, Zhengyuan Wu, Weihua Tang, Zhi-Lai Fang, Zhiyan Zhu, Shun-Li Wang

Physica Status Solidi (a)

DOI

2025

High-performance formaldehyde gas sensors based on Au/Pd bimetal decorated β-Ga2O3 nanorods

Hongchao Zhai, Chen-Xing Liu, Yu-Shi Wang, Zhengyuan Wu, Peng-Fei Tian, Zhilai Fang

Journal of Alloys and Compounds

DOI

2025

Enhanced room-temperature ammonia sensing facilitated by dual depletion layer modulation of β-Ga2O3 p-n homojunction

Hongchao Zhai, Yu-Shi Wang, Chen-Xing Liu, Zhengyuan Wu, Pengfei Tian, Dao-You Guo, Weihua Tang, Zhi-Lai Fang

Journal of Materials Science & Technology

DOI

2024

全氧化镓薄膜同质p-n结（英文）

翟泓超，刘晨星，吴征远，马聪聪，田朋飞，万景，康俊勇，褚君浩，方志来

Science China Materials

2024

High-responsivity β-Ga 2 O 3 /GaN heterojunction UV photodetectors with tunable multi-band detection capability

Nan Yang, Chenxing Liu, Hongchao Zhai, Siyu Wu, Zhengyuan Wu, Pengfei Tian, Daoyou Guo, Weihua Tang, Zhilai Fang

CrystEngComm

DOI

2024

N-doped β-Ga2O3/Si-doped β-Ga2O3 linearly-graded p-n junction by a one-step integrated approach

Chenxing Liu, Zhengyuan Wu, Hongchao Zhai, Jason Hoo, Shiping Guo, Jing Wan, Junyong Kang, Junhao Chu, Zhilai Fang

Journal of Material Science and Technology

DOI

2024

β-Ga2O3 van der Waals p-n homojunction

Yüe Zhao, Zhengyuan Wu, Chenxing Liu, Xiaofei Yue, Jiajun Chen, Chunxiao Cong, Jianlu Wang, Junyong Kang, Junhao Chu, Zhilai Fang

Materials Today Physics

DOI

2024

Full β-Ga2O3 films-based p-n homojunction

Hongchao Zhai, Chenxing Liu, Zhengyuan Wu, Congcong Ma, Pengfei Tian, Jing Wan, Junyong Kang, Junhao Chu, Zhilai Fang

Science China Materials

DOI

2024

High-performance (Al 0.4 Ga 0.6 ) 2 O 3 /Al 0.32 Ga 0.68 N-based UVC/UVB tunable dual-band photodetectors

Siyu Wu, Zhengyuan Wu, Pengfei Tian, Jason Hoo, Shiping Guo, Zhilai Fang

CrystEngComm

DOI

2024

P-type β-Ga2O3 films room-temperature NH3 gas sensors with fast gas sensing and low limitation of detection

Hongchao Zhai, Zhengyuan Wu, Kai Xiao, Mei-Ying Ge, Chen-Xing Liu, Peng-Fei Tian, Jing Wan, Jian-Lu Wang, Junyong Kang, Junhao Chu, Zhilai Fang

Journal of Materials Chemistry C

DOI

2023

AlInGaN nanocrystal seeded growth of weak p-type β-(In 0.1 Ga 0.9 ) 2 O 3 nanowires and nanobelts

Haojie Li, Zhengyuan Wu, Pengfei Tian, Jinchai Li, Junyong Kang, Guoqi Zhang, Zhilai Fang

CrystEngComm

DOI

2023

(AlxGa1-x)2O3-based materials: Growth, properties, and device applications

Haojie Li, Zhengyuan Wu, Siyu Wu, Pengfei Tian, Zhilai Fang

Journal of Alloys and Compounds

DOI

2023

P-type nitrogen-doped β-Ga 2 O 3 : the role of stable shallow acceptor N O –V Ga complexes

Congcong Ma, Zhengyuan Wu, Hao Zhang, Heyuan Zhu, Junyong Kang, Junhao Chu, Zhilai Fang

Physical Chemistry Chemical Physics

DOI

2022

Recent progress of Ga2O3-based gas sensors

Hongchao Zhai, Zhengyuan Wu, Zhilai Fang

Ceramics International

DOI

2022

β-Ga2O3 nanowires: controlled growth, characterization, and deep-ultraviolet photodetection application

Wei Ruan, Zhengyuan Wu, Jian Liu, Jing Chen, Yabing Shan, Pengyu Song, Zhuoxun Jiang, Ran Liu, Guoqi Zhang, Zhilai Fang

Journal of Physics D Applied Physics

DOI

2022

Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped β-Ga 2 O 3 with high hole mobility

Congcong Ma, Zhengyuan Wu, Zhuoxun Jiang, Ying Chen, Wei Ruan, Hao Zhang, Heyuan Zhu, Guoqi Zhang, Junyong Kang, Tong‐Yi Zhang, Junhao Chu, Zhilai Fang

Journal of Materials Chemistry C

DOI

2022

Correction: Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped β-Ga 2 O 3 with high hole mobility

Congcong Ma, Zhengyuan Wu, Zhuoxun Jiang, Ying Chen, Wei Ruan, Hao Zhang, Heyuan Zhu, Guoqi Zhang, Junyong Kang, Tong‐Yi Zhang, Junhao Chu, Zhilai Fang

Journal of Materials Chemistry C

DOI

2021

Large-Area Monolayer MoS2 Nanosheets on GaN Substrates for Light-Emitting Diodes and Valley-Spin Electronic Devices

Peng Yang, Haifeng Yang, Zhengyuan Wu, Fuyou Liao, Xiaojiao Guo, Jianan Deng, Qiang Xu, Haomin Wang, Junjie Sun, Fei Chen, Wenzhong Bao, Laigui Hu, Zhongkai Liu, Yulin Chen, Zhi‐Jun Qiu, Zhilai Fang, Ran Liu, Chunxiao Cong

ACS Applied Nano Materials

DOI

2021

Energy-driven multi-step structural phase transition mechanism to achieve high-quality p-type nitrogen-doped β-Ga2O3 films

Zhengyuan Wu, Zicong Jiang, Congcong Ma, W. Ruan, Ying Chen, Hao Zhang, Guoqi Zhang, Zhilai Fang, Junyong Kang, Tong‐Yi Zhang

Materials Today Physics

DOI

2020

高质量β-Ga2O3纳米材料的可控生长与表征

蒋卓汛，吴征远，阮微，方志来

《光源与照明》

2020

P-type β-Ga2O3 metal-semiconductor-metal solar-blind photodetectors with extremely high responsivity and gain-bandwidth product

Zicong Jiang, Zhengyuan Wu, Congcong Ma, Jianan Deng, Hao Zhang, Yu Xu, J.D. Ye, Zhilai Fang, G.Q. Zhang, Junyong Kang, Tong‐Yi Zhang

Materials Today Physics

DOI

2019

半极性Ⅲ族氮化物材料外延与发光研究

吴征远

《厦门大学》

2019

Semipolar (112¯2) GaN Films Improved by in situ SiNx Pretreatment of m‐Sapphire Substrate Surface

Zhengyuan Wu, Zhuoxun Jiang, Shiqiang Lu, Jinchai Li, Ran Liu, Kang Jun-yong, Zhilai Fang

physica status solidi (a)

DOI

2019

Nanowire‐Seeded Growth of Single‐Crystalline (010) β‐Ga2O3 Nanosheets with High Field‐Effect Electron Mobility and On/Off Current Ratio

Zhengyuan Wu, Zhuoxun Jiang, Pengyu Song, Pengfei Tian, Laigui Hu, Ran Liu, Zhilai Fang, Junyong Kang, Tong‐Yi Zhang

Small

DOI

2018

Green-amber emission from high indium content InGaN quantum wells improved by interface modification of semipolar (1122) GaN templates

Zhengyuan Wu, Shiqiang Lu, Peng Yang, Pengfei Tian, Laigui Hu, Ran Liu, Junyong Kang, Zhilai Fang

CrystEngComm

DOI

2018

Phosphor-free white emission from InGaN quantum wells grown on in situ formed submicron-scale multifaceted GaN stripes

Xiyang Shen, Zhengyuan Wu, Jinchai Li, Kang Jun-yong, Zhilai Fang

Journal of Alloys and Compounds

DOI

2018

Large-signal modulation characteristics of a GaN-based micro-LED for Gbps visible-light communication

Pengfei Tian, Zhengyuan Wu, Xiaoyan Liu, Zhilai Fang, Shuailong Zhang, Xiaolin Zhou, Kefu Liu, Ming-Gang Liu, Shujhih Chen, Chia-Yu Lee, Chunxiao Cong, Laigui Hu, Zhi‐Jun Qiu, Li‐Rong Zheng, Ran Liu

Applied Physics Express

DOI

2018

Improved semipolar green InGaN/GaN quantum wells on asymmetrically grown (1122) GaN templates and their correlations

Zhengyuan Wu, Tien‐Mo Shih, Jinchai Li, Pengfei Tian, Ran Liu, Junyong Kang, Zhilai Fang

CrystEngComm

DOI

2017

In Situ Site-Specific Gallium Filling and Nanograin Growth for Blocking of Threading Defects in Semipolar (1122) GaN

Zhengyuan Wu, Pengyu Song, Tien‐Mo Shih, Linna Pang, Li Chen, Guangyang Lin, Dingqu Lin, Cheng Li, Ran Liu, Wenzhong Shen, Junyong Kang, Zhilai Fang

Crystal Growth & Design

DOI

2017

Self-consistent growth of single-crystalline (01)β-Ga2O3 nanowires using a flexible GaN seed nanocrystal

Pengyu Song, Zhengyuan Wu, Xi-Yang Shen, Jun-Yong Kang, Zhilai Fang, Tong-Yi Zhang

DOI

2017

フレキシブルGaN種子ナノ結晶を用いた単結晶(201)βGa_2O_3ナノワイヤの自己矛盾のない成長【Powered by NICT】

Pengyu Song, Zhengyuan Wu, Xi-Yang Shen, Jun-Yong Kang, Zhilai Fang, Tong-Yi Zhang

2016

Improved interface quality and luminescence capability of InGaN/GaN quantum wells with Mg pretreatment

Zhengyuan Wu, Xi-Yang Shen, H. Xiong, Qingfei Li, Jun-Yong Kang, Zhilai Fang, Feng Lin, Bilan Yang, Shi-Sheng Lin, Wen-Zhong Shen, Tong-Yi Zhang

DOI

2016

InGaN/GaN quantum well improved by in situ SiNx pretreatment of GaN template

De-Meng Huang, Zhengyuan Wu, Zhilai Fang

DOI

2016

In situ asymmetric island sidewall growth of high-quality semipolar (112) GaN on m-plane sapphire

Zhengyuan Wu, Xi-Yang Shen, Chuan Liu, Kong-Yi Li, Wen-Zhong Shen, Jun-Yong Kang, Zhilai Fang

DOI

2015

Improved InGaN/GaN quantum wells on treated GaN template with a Ga‐rich GaN interlayer

Zhilai Fang, Xi-Yang Shen, Zhengyuan Wu, Tong-Yi Zhang

DOI

精选作品

期刊论文

用于背面供电网络的纯钌n-TSV加工与极致全干法SOI晶圆减薄技术（英文）

A high-performance, self-powered β-Ga 2 O 3 asymmetric Schottky barrier deep-ultraviolet photodiode

An integrated model for predicting the response, selectivity, and response/recovery time of composite gas sensors

Owl‐Inspired Neuromorphic Vision Sensor with Highly‐Sensitive Ultraweak Deep‐Ultraviolet Light Detection in Dim Environments

Generalized model-driven design and fabrication of ultrasensitive and ultrafast β-Ga2O3/SnO2 ethanol gas sensors

Photomultiplication‐Type β‐Ga2O3 Solar‐Blind Photodetector with Excellent Capability of Weak Signal Detection and Anti‐Interference DUV Imaging

Low-power optoelectronic synaptic devices with ZnMgO in deep-ultraviolet encryption computation

High Responsivity, Ultra-flexible, Self-driven Solar-blind Fibrous Photoelectrochemical Detector for Seawater Antibiotic Detection

Energy Band Modulation and Solar‐Blind Photoresponse Extension Based on (SnxGa1−x)2O3

High-performance formaldehyde gas sensors based on Au/Pd bimetal decorated β-Ga2O3 nanorods

Enhanced room-temperature ammonia sensing facilitated by dual depletion layer modulation of β-Ga2O3 p-n homojunction

全氧化镓薄膜同质p-n结（英文）

High-responsivity β-Ga 2 O 3 /GaN heterojunction UV photodetectors with tunable multi-band detection capability

N-doped β-Ga2O3/Si-doped β-Ga2O3 linearly-graded p-n junction by a one-step integrated approach

β-Ga2O3 van der Waals p-n homojunction

Full β-Ga2O3 films-based p-n homojunction

High-performance (Al 0.4 Ga 0.6 ) 2 O 3 /Al 0.32 Ga 0.68 N-based UVC/UVB tunable dual-band photodetectors

P-type β-Ga2O3 films room-temperature NH3 gas sensors with fast gas sensing and low limitation of detection

AlInGaN nanocrystal seeded growth of weak p-type β-(In 0.1 Ga 0.9 ) 2 O 3 nanowires and nanobelts

(AlxGa1-x)2O3-based materials: Growth, properties, and device applications

P-type nitrogen-doped β-Ga 2 O 3 : the role of stable shallow acceptor N O –V Ga complexes

Recent progress of Ga2O3-based gas sensors

β-Ga2O3 nanowires: controlled growth, characterization, and deep-ultraviolet photodetection application

Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped β-Ga 2 O 3 with high hole mobility

Correction: Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped β-Ga 2 O 3 with high hole mobility

Large-Area Monolayer MoS2 Nanosheets on GaN Substrates for Light-Emitting Diodes and Valley-Spin Electronic Devices

Energy-driven multi-step structural phase transition mechanism to achieve high-quality p-type nitrogen-doped β-Ga2O3 films

高质量β-Ga2O3纳米材料的可控生长与表征

P-type β-Ga2O3 metal-semiconductor-metal solar-blind photodetectors with extremely high responsivity and gain-bandwidth product

半极性Ⅲ族氮化物材料外延与发光研究

Semipolar (112¯2) GaN Films Improved by in situ SiNx Pretreatment of m‐Sapphire Substrate Surface

Nanowire‐Seeded Growth of Single‐Crystalline (010) β‐Ga2O3 Nanosheets with High Field‐Effect Electron Mobility and On/Off Current Ratio

Green-amber emission from high indium content InGaN quantum wells improved by interface modification of semipolar (1122) GaN templates

Phosphor-free white emission from InGaN quantum wells grown on in situ formed submicron-scale multifaceted GaN stripes

Large-signal modulation characteristics of a GaN-based micro-LED for Gbps visible-light communication

Improved semipolar green InGaN/GaN quantum wells on asymmetrically grown (1122) GaN templates and their correlations

In Situ Site-Specific Gallium Filling and Nanograin Growth for Blocking of Threading Defects in Semipolar (1122) GaN

Self-consistent growth of single-crystalline (01)β-Ga2O3 nanowires using a flexible GaN seed nanocrystal

フレキシブルGaN種子ナノ結晶を用いた単結晶(201)βGa_2O_3ナノワイヤの自己矛盾のない成長【Powered by NICT】

Improved interface quality and luminescence capability of InGaN/GaN quantum wells with Mg pretreatment

InGaN/GaN quantum well improved by in situ SiNx pretreatment of GaN template

In situ asymmetric island sidewall growth of high-quality semipolar (112) GaN on m-plane sapphire

Improved InGaN/GaN quantum wells on treated GaN template with a Ga‐rich GaN interlayer

研究方向