李涛涛｜南京大学｜学者主页

期刊论文

2026

Kinetic acceleration of MoS 2 growth by oxy-metal-organic chemical vapor deposition

Lei Liu, Yushu Wang, Ruikang Dong, Dongxu Fan, Si Meng, Lang Wu, Shengqiang Wu, Wei Xu, M. S. Feng, Ningmu Zou, Qingyu Yan, Zehua Hu, Fei Lu, Shitong Zhu, Yuan Gao, Liang Ma, Yi Shi, Taotao Li, Xinran Wang, Xinran Wang

Science

DOI

2026

Author Correction: Scaled crystalline antimony ohmic contacts for two-dimensional transistors

Mingyi Du, Weisheng Li, Guangkai Xiong, Chunsong Zhao, Fuchen Hou, Weizhuo Gan, Xiaoshu Gong, Ningmu Zou, Lei Liu, Xilu Zou, Taotao Li, Wenjie Sun, Dongxu Fan, Zhihao Yu, Xuecou Tu, Yuan Gao, Haoliang Shen, Hao Qiu, Liang Ma, Xinran Wang, Yuefeng Nie, Li Tao, Jianbin Xu, Junhao Lin, Jeffrey Xu, Yi Shi, Xinran Wang

Nature Electronics

DOI

2026

Dynamic Processes in Chemical-Vapor Deposition of Transition-Metal Dichalcogenides Revealed by AI-Driven Operando Metrology

Mingwei Feng, Xilu Zou, Haotian Zhang, Caiqi Zou, Silin Chen, Wei Xu, Xiaotian Zhang, Taotao Li, Ningmu Zou

IEEE International Conference on Nanotechnology (IEEE-NANO)

DOI

2025

Direct orientational epitaxy of wafer-scale 2D van der Waals heterostructures of metal dichalcogenides

Shenghong Liu, Ke Qin, Jiashu Yang, Tao Hu, Hao Luo, Jingsong Wu, Zhen Cui, Taotao Li, Feng Ding, Xinran Wang, Yuan Li, Tianyou Zhai

National Science Review

2024

Displacement damage effects in MoS2-based electronics

Kaiyue He, Zhanqi Li, Taotao Li, Yifu Sun, Shitong Zhu, Chao Wu, Huiping Zhu, Peng Lu, Xinran Wang, Maguang Zhu

Journal of Semiconductors

2023

Halide vapor phase epitaxy of monolayer molybdenum diselenide single crystals

Taotao Li, Yang Yang, Liqi Zhou, Wenjie Sun, Weiyi Lin, Lei Liu, Xilu Zou, Si Gao, Yuefeng Nie, Yi Shi, Xinran Wang

National Science Open

预印本

2023

Electrical contact properties between Yb and few-layer WS$_2$

Shihao Ju, Lipeng Qiu, Jian Zhou, Binxi Liang, Wenfeng Wang, Taotao Li, Jian Chen, Xinran Wang, Yi Shi, Songlin Li

arXiv preprint

DOI

2019

Integrating high-quality dielectrics with one-nanometer equivalent oxide thickness on two-dimensional electronic devices

Weisheng Li, Jian Zhou, Songhua Cai, Zhihao Yu, Jialin Zhang, Nan Fang, Taotao Li, Yun Wu, Tangsheng Chen, Xiaoyu Xie, Haibo Ma, Ke Yan, Ningxuan Dai, Xiangjin Wu, Huijuan Zhao, Zixuan Wang, Daowei He, Lijia Pan, Yi Shi, Peng Wang, Wei Chen, Kosuke Nagashio, Xiangfeng Duan, Xinran Wang

arXiv preprint

李涛涛

精选作品

期刊论文

Kinetic acceleration of MoS 2 growth by oxy-metal-organic chemical vapor deposition

Author Correction: Scaled crystalline antimony ohmic contacts for two-dimensional transistors

Dynamic Processes in Chemical-Vapor Deposition of Transition-Metal Dichalcogenides Revealed by AI-Driven Operando Metrology

Direct orientational epitaxy of wafer-scale 2D van der Waals heterostructures of metal dichalcogenides

Displacement damage effects in MoS2-based electronics

Halide vapor phase epitaxy of monolayer molybdenum diselenide single crystals

预印本

Electrical contact properties between Yb and few-layer WS$_2$

Integrating high-quality dielectrics with one-nanometer equivalent oxide thickness on two-dimensional electronic devices

研究方向