吴凡｜复旦大学｜学者主页

2026

Stress-engineered 0.34 nm graphene memristors for low-power probabilistic computing

Yanming Liu, Jinzhu Li, Zhoujie Pan, Hengbin Ding, Y. HONG, Fan Wu, Peigen Zhang, Yizhe Guo, Ziyu Liu, Tian‐Ling Ren, He Tian

Nature Communications

DOI

2026

Reconfigurable ferroelectric GAAFET architectures for advanced logic circuits

Chenhao Xu, Zhibin Wang, Shuxin Chen, Wunan Wang, Kaichen Zhu, Fan Wu, Wenwu Li

Microelectronic Engineering

DOI

2026

A towards-foundry strategy for creating fully interconnected two-dimensional microprocessors

Yi-Zhe Guo, Pei-Gen Zhang, Yan-Ming Liu, Zhi-Yuan Liu, Jin-Xiu Liu, Anhan Liu, Dai-Xuan Wu, Zhou-Jie Pan, Heng-Bin Ding, Shi Yu, Xiaowei Zhang, Fan Wu, Yu-Wan Hong, Ze-Gao Wang, Tian-Ling Ren, He Tian

Nature Electronics

DOI

2026

Reconfigurable and multifunctional circuits using the Stark effect in black phosphorus

H. Tian, Zhanju Hou, Fan Wu, Jing Jiang, Dai-Xuan Wu, Yang Shen, Ting-Zhong Xu, Xiao-yong Xue, Zi-Ming Wang, Hao Guo, Tian-Ling Ren

Nature Physics

DOI

2026

Multi-responsive retinomorphic sensor for reconfigurable optoelectronic computing

Yu-Hao Wang, Yuan Cheng, Jiong Pan, Yuyan Wang, Jia-Cheng Sun, Yinjie Liu, Yi-Zhe Guo, G. Dun, Jingkai Song, Jiyuan Zheng, Chenchen Deng, Yi Yang, Yu-Tao Li, Fan Wu, Qiong-Hai Dai, Tian-Ling Ren, Lu Fang

Nature Sensors

DOI

2026

Wafer-scale 2D MoS2 transistors with self-aligned angstrom gate length and nanometer channel length

Zi-Ming Wang, Anhan Liu, Heng-Bin Ding, Fan Wu, Caifang Gao, Yi-Zhe Guo, Ruifang Xue, Pei-Gen Zhang, Yan-Ming Liu, Tao Deng, Tian-Ling Ren, He Tian

Nature Communications

DOI

2024

Multibarrier Collaborative Modulation Devices with Ultra-High Logic Operation Density.

Jiong Pan, Fan Wu, Zeda Wang, Shangjian Liu, Peng-Wen Guo, Jiaju Yin, Bingchen Zhao, H. Tian, Yi Yang, Tian-Ling Ren

ACS Nano

DOI

2024

Deep reinforcement learning framework for end-to-end semiconductor process control

Thomas Hirtz, H. Tian, Shazrah Shahzad, Fan Wu, Yi Yang, Tian-Ling Ren

Neural computing & applications (Print)

DOI

2023

The insight and evaluation of ultra-scaled sub-1 nm gate length transistors

H. Tian, Yang Shen, Zhaoyi Yan, Yan-Ming Liu, Fan Wu, Tian-ling Ren

Microelectronic Engineering

DOI

2023

An efficient model algorithm for two-dimensional field-effect transistors

Zhaoyi Yan, Zhanju Hou, Fan Wu, Rui-Ting Zhao, Jian-Fei Yan, An-Zhi Yan, Zhenze Wang, K. Xue, Hou-Fang Liu, H. Tian, Yi Yang, Tian-ling Ren

2023

A drain current formula for two-dimensional field-effect transistors with one-shot convergence algorithm

Zhaoyi Yan, Zhanju Hou, Fan Wu, Rui-Ting Zhao, Jianlan Yan, An-Zhi Yan, Zhenze Wang, Kan-Hao Xue, Hou-Fang Liu, H. Tian, Yi Yang, Tian-ling Ren

2D Materials

DOI

2023

Landauer‐QFLPS Model for Mixed Schottky‐Ohmic Contact Two‐Dimensional Transistors

Zhaoyi Yan, Zhanju Hou, Kan-Hao Xue, H. Tian, Tianqi Lu, Junying Xue, Fan Wu, Rui-Ting Zhao, Minghao Shao, Jianlan Yan, An-Zhi Yan, Zhenze Wang, Penghui Shen, Mingyue Zhao, Xiang-Shui Miao, Zhaoyang Lin, Hou-Fang Liu, Yi Yang, Tian-ling Ren

Advancement of science

DOI

2023

Oxygen Incorporated MoS2 for Rectification‐Mediated Resistive Switching and Artificial Neural Network

Xuya Xiong, Fan Wu, Yi Ouyang, Yan-Ming Liu, Ze-Gao Wang, He Tian, M. Dong

Advanced Functional Materials

DOI

2023

Evaluation of etching performance of single etching gases for high-κ films

Anhan Liu, Zhanju Hou, Fan Wu, Xiao-Wei Zhang, Shingo Nakamura, Tomomi Irita, Akinari Sugiyama, Takashi Nishikawa, He Tian

Microelectronic Engineering

DOI

2023

Cellular automata imbedded memristor-based recirculated logic in-memory computing

Yan-Ming Liu, H. Tian, Fan Wu, Anhan Liu, Yihao Li, Hao Sun, M. Lanza, Tian-ling Ren

Nature Communications

DOI

2023

Landauer‐QFLPS Model for Mixed Schottky‐Ohmic Contact Two‐Dimensional Transistors (Adv. Sci. 34/2023)

Zhaoyi Yan, Zhanju Hou, Kan-Hao Xue, H. Tian, Tianqi Lu, Jun-Ying Xue, Fan Wu, Rui-Ting Zhao, Minghao Shao, Jianlan Yan, An-Zhi Yan, Zhenze Wang, Penghui Shen, Mingyue Zhao, Xiang-Shui Miao, Zhao-Yang Lin, Hou-Fang Liu, Yi Yang, Tian-Ling Ren

Advancement of science

DOI

2022

The α-In2Se3 THz Photodetector

Jing Chen, Fan Wu, Ping Li, Jianguo Hu, H. Tian, Xiaoming Wu, Yi Yang, Tian-ling Ren

IEEE Transactions on Electron Devices

DOI

2022

Vertical MoS2 transistors with sub-1-nm gate lengths

Fan Wu, H. Tian, Yang Shen, Zhanju Hou, Jie Ren, Guang-Yang Gou, Ya-Bin Sun, Yi Yang, T. Ren

Nature

DOI

2022

High Thermal Conductivity 2D Materials: From Theory and Engineering to Applications

Fan Wu, H. Tian, Yang Shen, Zheng‐Qiang Zhu, Yan-Ming Liu, Thomas Hirtz, Rui Wu, Guang-Yang Gou, Yancong Qiao, Yi Yang, Chao Xing, Gang Zhang, Tian-ling Ren

Advanced Materials Interfaces

DOI

2022

High Thermal Conductivity 2D Materials: From Theory and Engineering to Applications (Adv. Mater. Interfaces 21/2022)

Fan Wu, H. Tian, Yang Shen, Zheng-Mao Zhu, Yan-Ming Liu, Thomas Hirtz, Rui Wu, Guang-Yang Gou, Yancong Qiao, Yi Yang, Chao Xing, Gang Zhang, Tian-ling Ren

Advanced Materials Interfaces

DOI

2022

The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms

Yang Shen, Zuo-Yuan Dong, Ya-Bin Sun, Hao Guo, Fan Wu, Xiang-Long Li, Jun Tang, J. Liu, Xing Wu, H. Tian, Tian-ling Ren

Advances in Materials

DOI

2022

Bioinspired dual-channel speech recognition using graphene-based electromyographic and mechanical sensors

H. Tian, Xiaoshi Li, Yuhong Wei, Shourui Ji, Qi-Sheng Yang, Guang-Yang Gou, Xue-Feng Wang, Fan Wu, Jinming Jian, Haotian Guo, Yancong Qiao, Yu Wang, Wenci Gu, Yi-Zhe Guo, Yi Yang, Tian-ling Ren

Cell Reports Physical Science

DOI

2022

Two-stage amplification of an ultrasensitive MXene-based intelligent artificial eardrum

Guang-Yang Gou, Xiaoshi Li, Jinming Jian, H. Tian, Fan Wu, Jie Ren, Xiangshun Geng, Jiandong Xu, Yancong Qiao, Zhaoyi Yan, Guanhua Dun, C. Ahn, Yi Yang, Tian-ling Ren

Science Advances

DOI

2022

Vertical WSe2/BP/MoS2 heterostructures with tunneling behaviors and photodetection

Fan Wu, Zheng‐Qiang Zhu, H. Tian, Zhaoyi Yan, Yan-Ming Liu, Yang Xu, Chao Xing, Tian-ling Ren

Applied Physics Letters

DOI

2022

Electrospun Nanofiber‐Based Synaptic Transistor with Tunable Plasticity for Neuromorphic Computing

Yi-Zhe Guo, Fan Wu, Guanhua Dun, Tianrui Cui, Yan-Ming Liu, Xichao Tan, Yancong Qiao, M. Lanza, H. Tian, Yi Yang, Tian-ling Ren

Advanced Functional Materials

DOI

2022

Polydopamine-assisted pixeled lead-free perovskite photosensors array

Guanhua Dun, Yuan-yuan Li, Ken Qin, Fan Wu, Xichao Tan, Xiangshun Geng, Chunlin Wang, M. Zhang, Z. Wang, Yu-Han Wang, He-Xuan Wang, D. Xie, Yi Yang, H. Tian, Tian-ling Ren

Journal of Alloys and Compounds

DOI

2021

Black phosphorus junctions and their electrical and optoelectronic applications

Ning-Qin Deng, H. Tian, Jian Zhang, Jinming Jian, Fan Wu, Yang Shen, Yi Yang, T. Ren

Journal of Semiconductors

DOI

2021

The Origin of CBRAM With High Linearity, On/Off Ratio, and State Number for Neuromorphic Computing

Yan-Ming Liu, Jia-Lu Gao, Fan Wu, H. Tian, T. Ren

IEEE Transactions on Electron Devices

DOI

2021

Transistor Subthreshold Swing Lowered by 2-D Heterostructures

Fan Wu, H. Tian, Zhaoyi Yan, Yang Shen, Jie Ren, Yi Yang, T. Ren

IEEE Transactions on Electron Devices

DOI

2021

A 10 nm Short Channel MoS 2 Transistor without the Resolution Requirement of Photolithography (Adv. Electron. Mater. 12/2021)

Fan Wu, Jie Ren, Yi Yang, Zhaoyi Yan, H. Tian, Guang-Yang Gou, Xue-Feng Wang, Zi-Jian Zhang, Xin Yang, Xing Wu, T. Ren

Advanced Electronic Materials

DOI

2021

Modeling of Gate Tunable Synaptic Device for Neuromorphic Applications

Yang Shen, H. Tian, Yan-Ming Liu, Fan Wu, Zhaoyi Yan, Thomas Hirtz, Xue-Feng Wang, T. Ren

Frontiers of Physics

DOI

2021

Gate-Tunable Negative Differential Resistance Behaviors in a hBN-Encapsulated BP-MoS2 Heterojunction.

Fan Wu, H. Tian, Zhaoyi Yan, Jie Ren, Thomas Hirtz, Guang-Yang Gou, Yang Shen, Yi Yang, T. Ren

ACS Applied Materials and Interfaces

DOI

2021

Ambipolar transport compact models for two-dimensional materials based field-effect transistors

Zhaoyi Yan, Guang-Yang Gou, Jie Ren, Fan Wu, Yang Shen, H. Tian, Yi Yang, T. Ren

DOI

2021

A 10 nm Short Channel MoS2 Transistor without the Resolution Requirement of Photolithography

Fan Wu, Jie Ren, Yi Yang, Zhaoyi Yan, H. Tian, Guang-Yang Gou, Xue-Feng Wang, Zi-Jian Zhang, Xin Yang, Xing Wu, T. Ren

Advanced Electronic Materials

DOI

2020

Graphene-Based Thermoacoustic Sound Source.

Yancong Qiao, Guang-Yang Gou, Fan Wu, Jinming Jian, Xiaoshi Li, Thomas Hirtz, Yunfei Zhao, Yao Zhi, Fangwei Wang, H. Tian, Yi Yang, T. Ren

ACS Nano

DOI

2020

Fabricating Molybdenum Disulfide Memristors

Yancong Qiao, Thomas Hirtz, Fan Wu, Ge Deng, Xiaoshi Li, Yao Zhi, H. Tian, Yi Yang, T. Ren

DOI

2020

Graphene muscle with artificial intelligence

Ning-Qin Deng, H. Tian, Fan Wu, Ye Tian, Xiaoshi Li, Yang Xu, Yi Yang, T. Ren

IEEE Electron Devices Technology and Manufacturing Conference

DOI

2020

Ultimate 0.34 nm Gate-length Side-Wall Transistors with Atomic Level Channel

T. Ren, Fan Wu, Yang Shen, H. Tian, Jie Ren, Guang-Yang Gou, Yi Yang

DOI

2020

Thermal Energy Conversion: Graphene‐Based Devices for Thermal Energy Conversion and Utilization (Adv. Funct. Mater. 8/2020)

Yu-Tao Li, Ye Tian, Mengxing Sun, T. Tu, Zhenyi Ju, Guang-Yang Gou, Yunfei Zhao, Zhaoyi Yan, Fan Wu, D. Xie, H. Tian, Yi Yang, T. Ren

DOI

2020

Novel photoelectroactive memories and neuromorphic devices based on nanomaterials

Fan Wu, H. Tian, T. Ren

DOI

2019

Graphene‐Based Synaptic Devices for Neuromorphic Applications

H. Tian, Fan Wu, T. Ren

Handbook of Graphene

DOI

2019

A novel thermal acoustic device based on vertical graphene film

T. Tu, Zhenyi Ju, Yu-Tao Li, Guang-Yang Gou, Ye Tian, Fan Wu, Zhaoyi Yan, Hou-Fang Liu, Tian-Zhong Yang, Yi Yang, H. Tian, T. Ren

AIP Advances

DOI

2019

An efficient flexible graphene-based light-emitting device

Guangya Jiang, H. Tian, Xue-Feng Wang, Thomas Hirtz, Fan Wu, Yancong Qiao, Guang-Yang Gou, Yuhong Wei, Jingming Yang, Si-Fan Yang, Yi Yang, T. Ren

Nanoscale Advances

DOI

2019

Graphene‐Based Devices for Thermal Energy Conversion and Utilization

Yu-Tao Li, Ye Tian, Mengxing Sun, T. Tu, Zhenyi Ju, Guang-Yang Gou, Yunfei Zhao, Zhaoyi Yan, Fan Wu, D. Xie, H. Tian, Yi Yang, T. Ren

Advanced Functional Materials

DOI

2019

Graphene-based wearable sensors.

Yancong Qiao, Xiaoshi Li, Thomas Hirtz, Ge Deng, Yuhong Wei, Mingrui Li, Qi Wu, Shourui Ji, Jinming Jian, Fan Wu, Yang Shen, H. Tian, Yezhou Yang, T. Ren

Nanoscale

DOI

2019

Graphene Acoustic Devices

H. Tian, Guang-Yang Gou, Fan Wu, Lu-Qi Tao, Yi Yang, T. Ren

Graphene [Working Title]

DOI

2019

Novel Perovskite-Based Devices

Fan Wu, H. Tian

2019 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)

DOI

2019

Flexible Two-Dimensional Ti3C2 MXene Films as Thermo-Acoustic Devices.

Guang-Yang Gou, M. Jin, Byeong-Joo Lee, H. Tian, Fan Wu, Yu-Tao Li, Zhenyi Ju, Jin Jian, Xiangshun Geng, Jun Ren, Yuhong Wei, Guangya Jiang, Yancong Qiao, Xiaoshi Li, Seon Joon Kim, Min Gao, Hee-Tae Jung, C. Ahn, Yezhou Yang, T. Ren

ACS Nano

DOI

2018

High Performance 2D Perovskite/Graphene Optical Synapses as Artificial Eyes

H. Tian, Xue-Feng Wang, Fan Wu, Yi Yang, T. Ren

International Electron Devices Meeting

DOI

2018

A hardware Markov chain algorithm realized in a single device for machine learning

H. Tian, Xue-Feng Wang, M. A. Mohammad, Guang-Yang Gou, Fan Wu, Yi Yang, T. Ren

Nature Communications

DOI

精选作品

期刊论文

Stress-engineered 0.34 nm graphene memristors for low-power probabilistic computing

Reconfigurable ferroelectric GAAFET architectures for advanced logic circuits

A towards-foundry strategy for creating fully interconnected two-dimensional microprocessors

Reconfigurable and multifunctional circuits using the Stark effect in black phosphorus

Multi-responsive retinomorphic sensor for reconfigurable optoelectronic computing

Wafer-scale 2D MoS2 transistors with self-aligned angstrom gate length and nanometer channel length

Multibarrier Collaborative Modulation Devices with Ultra-High Logic Operation Density.

Deep reinforcement learning framework for end-to-end semiconductor process control

The insight and evaluation of ultra-scaled sub-1 nm gate length transistors

An efficient model algorithm for two-dimensional field-effect transistors

A drain current formula for two-dimensional field-effect transistors with one-shot convergence algorithm

Landauer‐QFLPS Model for Mixed Schottky‐Ohmic Contact Two‐Dimensional Transistors

Oxygen Incorporated MoS2 for Rectification‐Mediated Resistive Switching and Artificial Neural Network

Evaluation of etching performance of single etching gases for high-κ films

Cellular automata imbedded memristor-based recirculated logic in-memory computing

Landauer‐QFLPS Model for Mixed Schottky‐Ohmic Contact Two‐Dimensional Transistors (Adv. Sci. 34/2023)

The α-In2Se3 THz Photodetector

Vertical MoS2 transistors with sub-1-nm gate lengths

High Thermal Conductivity 2D Materials: From Theory and Engineering to Applications

High Thermal Conductivity 2D Materials: From Theory and Engineering to Applications (Adv. Mater. Interfaces 21/2022)

The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms

Bioinspired dual-channel speech recognition using graphene-based electromyographic and mechanical sensors

Two-stage amplification of an ultrasensitive MXene-based intelligent artificial eardrum

Vertical WSe2/BP/MoS2 heterostructures with tunneling behaviors and photodetection

Electrospun Nanofiber‐Based Synaptic Transistor with Tunable Plasticity for Neuromorphic Computing

Polydopamine-assisted pixeled lead-free perovskite photosensors array

Black phosphorus junctions and their electrical and optoelectronic applications

The Origin of CBRAM With High Linearity, On/Off Ratio, and State Number for Neuromorphic Computing

Transistor Subthreshold Swing Lowered by 2-D Heterostructures

A 10 nm Short Channel MoS 2 Transistor without the Resolution Requirement of Photolithography (Adv. Electron. Mater. 12/2021)

Modeling of Gate Tunable Synaptic Device for Neuromorphic Applications

Gate-Tunable Negative Differential Resistance Behaviors in a hBN-Encapsulated BP-MoS2 Heterojunction.

Ambipolar transport compact models for two-dimensional materials based field-effect transistors

A 10 nm Short Channel MoS2 Transistor without the Resolution Requirement of Photolithography

Graphene-Based Thermoacoustic Sound Source.

Fabricating Molybdenum Disulfide Memristors

Graphene muscle with artificial intelligence

Ultimate 0.34 nm Gate-length Side-Wall Transistors with Atomic Level Channel

Thermal Energy Conversion: Graphene‐Based Devices for Thermal Energy Conversion and Utilization (Adv. Funct. Mater. 8/2020)

Novel photoelectroactive memories and neuromorphic devices based on nanomaterials

Graphene‐Based Synaptic Devices for Neuromorphic Applications

A novel thermal acoustic device based on vertical graphene film

An efficient flexible graphene-based light-emitting device

Graphene‐Based Devices for Thermal Energy Conversion and Utilization

Graphene-based wearable sensors.

Graphene Acoustic Devices

Novel Perovskite-Based Devices

Flexible Two-Dimensional Ti3C2 MXene Films as Thermo-Acoustic Devices.

High Performance 2D Perovskite/Graphene Optical Synapses as Artificial Eyes

A hardware Markov chain algorithm realized in a single device for machine learning

研究方向

The insight and evaluation of ultra-scaled sub-1 nm gate length transistors