付军｜清华大学｜学者主页

2026

宽温范围内SiGe HBT器件集约模型及参数提取方法

喻国芳，蔡旭东，崔杰，赵悦，付军

《集成电路与嵌入式系统》

DOI

2026

Physical insights into SiGe HBT operation at cryogenic temperatures: gain enhancement and early effect mechanisms

Xudong Cai, Guofang Yu, Renrong Liang, Jie Cui, Yue Min Zhao, Jun Fu

DOI

2026

AlN and LGS Surface Acoustic Wave Resonators for Passive Wireless High-Temperature Sensing

Yang Li, Zhen Li, Xiangshun Geng, Zijia Su, Guofang Yu, Jie Cui, Wenpu Cui, Jun Fu, Tian-Ling Ren

IEEE Sensors Journal

DOI

2026

Annealing Activation Effect of Pt Electrodes on SAW Devices with Langasite Substrate and the Mechanism Analysis

Runli Liu, Yang Li, Xudong Cai, Zhen Li, Jun Fu, Tianling Ren

IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI

2025

Thermal Gas Flow Sensor Using SiGe HBT Oscillators Based on GaN/Si SAW Resonators

Wenpu Cui, Jie Cui, Wenchao Zhang, Guofang Yu, Di Zhao, Jia Du, Zhen Li, Jun Fu, Tian‐Ling Ren

Micromachines

DOI

2025

Accurate Gummel Parameter Extraction for SiGe HBTs with Temperature-Dependent Saturation Current and Ideality Factor Models

Xudong Cai, Guofang Yu, Jie Cui, Yue Min Zhao, Jun Fu

IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

DOI

2025

Wide Temperature Behavior Analyses of SiGe HBTs Based on Small-Signal Parameter Extraction Method

Lu Zhao, Guofang Yu, Jie Cui, Yue Zhao, Jun Fu, Yanyan Liu

IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI

2025

Cryogenic Characterization and Turn-on Voltage Extraction of SiGe HBTs with Consideration of Incomplete Ionization Effects

Xudong Cai, Guofang Yu, Renrong Liang, Jie Cui, Yuan Zhao, Jun Fu

DOI

2025

Experimental Characterization of SiGe HBTs Under Wide-Temperature Conditions for Cryogenic Electronics

Xudong Cai, Guofang Yu, Jie Cui, Yuan Zhao, Jun Fu

DOI

2025

Advanced Process Module Development of SiGe HBT

Ying Lu, Jun Fu, Mingxin Ge, Yuan Zhao

DOI

2025

Wide-Temperature Characterization of Surface Acoustic Wave Devices with AlN/Sapphire Structure

Yang Li, Wenchao Zhang, Zhen Li, Guofang Yu, Xudong Cai, Runli Liu, Jun Fu, Tian‐Ling Ren

IEEE International Ultrasonics Symposium

DOI

2025

Thru Based Method with the Aid of Electromagnetic Simulation for Millimeter-Wave De-embedding

Jun Fu, Wenpu Cui, Xudong Cai

DOI

2024

Effects of co-60 gamma-ray irradiation on the DC and RF characteristics of SiGe HBTs

Guofang Yu, Jie Cui, Yue Zhao, Wenpu Cui, Jun Fu

Microelectronics Reliability

DOI

2021

Investigation of Base Transport Mechanism in Silicon-Germanium Heterojunction Bipolar Transistor Operating over Wide Temperature Range

Guofang Yu, Jie Cui, Yue Min Zhao, Jun Fu, Tian‐Ling Ren

Journal of Physics Conference Series

DOI

2020

Design and Optimization for 77 GHz Series-Fed Patch Array Antenna Based on Genetic Algorithm

Shuo Yang, Lijun Zhang, Jun Fu, Zhanqi Zheng, Xiaobin Zhang, Anmou Liao

Sensors

DOI

2020

A Miniaturized Integrated SAW Sensing System for Relative Humidity Based on Graphene Oxide Film

Fangwei Wang, Jin-Ming Jian, Xiangshun Geng, Guangyang Gou, Wenpu Cui, Jie Cui, Yancong Qiao, Jun Fu, Yi Ling Yang, Tian‐Ling Ren

IEEE Sensors Journal

DOI

2019

Degradation and annealing characteristics of NPN SiGe HBT exposed to heavy ions irradiation

Yabin Sun, Ziyu Liu, Jun Fu, Yanling Shi, Xiaojin Li

Radiation Physics and Chemistry

DOI

2019

A Novel Parameter Extraction Technique of Microwave Small-Signal Model for Nanometer MOSFETS

Yang Cao, Wei Zhang, Jun Fu, Quan Wang, Linlin Liu, Ao Guo

IEEE Microwave and Wireless Components Letters

DOI

2019

Scalable Modeling for the Coplanar Waveguide Step Discontinuity at Frequency up to 150 GHz

Hao Sun, Jun Fu, Wenpu Cui, Tian‐Ling Ren, Linlin Liu, Wei Gang Zhou, Quan Wang, Ao Guo

International Symposium on Next-Generation Electronics

DOI

2019

Scalable Modeling for the CPW Gap Discontinuity at Frequency up to 150 GHz

Hao Sun, Jun Fu, Wenpu Cui, Tian‐Ling Ren, Linlin Liu, Wei Gang Zhou, Quan Wang, Ao Guo

IEEE International Conference on ASIC (ASICON)

DOI

2019

A Complete Small-Signal MOSFET Model and Parameter Extraction Technique for Millimeter Wave Applications

Yang Cao, Wei Zhang, Jun Fu, Quan Wang, Linlin Liu, Ao Guo

IEEE Journal of the Electron Devices Society

DOI

2018

Investigation of total dose effects in SiGe HBTs under different exposure conditions

Yabin Sun, Ziyu Liu, Jun Fu, Xiaojin Li, Yanling Shi

Radiation Physics and Chemistry

DOI

2018

On-chip bias circuit for W-band silicon–germanium power amplifier

Shuo Yang, Lijun Zhang, Jun Fu, Xiaobin Zhang

Journal of Semiconductors

DOI

2018

Application of the Genetic Algorithm in MOSFET Modeling and Parameter Extraction

Yang Cao, Wei Zhang, Jun Fu, Nianhong Liu, Quan Wang, Linlin Liu

IEEE International Conference on Integrated Circuits and Microsystems (ICICM)

DOI

2018

Design of 85 GHz High Power Gain SiGe Buffer with Transformer Matching Network

Guiheng Zhang, Wei Zhang, Jun Fu

Journal of Circuits Systems and Computers

DOI

2018

An amplifier-doubler chain with conversion gain improvement techniques

Guiheng Zhang, Wei Zhang, Jun Fu, Bo Song

IEICE Electronics Express

DOI

2017

Design of 0.35–1.5 GHz 16‐input and 8‐output switch matrix with 5 × 5 chessboard structure

Guiheng Zhang, Wei Zhang, Jun Fu, Zhuang Li

Electronics Letters

DOI

2017

De-embedding and electromagnetic simulation calibration of on-wafer passive devices for millimeter wave integrated circuit design support

Yang Cao, Wei Zhang, Jun Fu, Nianhong Liu, Quan Wang, Linlin Liu

IEEE International Conference on Integrated Circuits and Microsystems (ICICM)

DOI

2017

Automatic and scalable parametric modeling for 1–100GHz transmission line

Nianhong Liu, Jun Fu, Wenpu Cui, Zhi‐Hong Liu, Linlin Liu, Wei Gang Zhou, Quan Wang, Ao Guo

IEEE Conference on Electron Devices and Solid-State Circuits

DOI

2017

A 77GHz power amplifier design scheme for automotive radar

Shuo Yang, Lijun Zhang, Jun Fu

IEEE Conference on Electron Devices and Solid-State Circuits

DOI

2017

Evaluation of the distributed deembedding methods for 40GHz CMOS transistor on-wafer characterization

Yang Cao, Wei Zhang, Jun Fu, Nianhong Liu, Quan Wang, Linlin Liu, Wei Gang Zhou, Hongbo Ye

IEEE Conference on Electron Devices and Solid-State Circuits

DOI

2017

Design of 0.35–1.5GHz 2-input 3-output SiGe switch cell with active balun

Guiheng Zhang, Wei Zhang, Jun Fu, Zhuang Li

IEEE Conference on Electron Devices and Solid-State Circuits

DOI

2017

Offset based feedforward amplifier with nonlinearity compensation and P1dB expansion

Zhan Su, Hossein Noori, Fa Foster Dai, Wei Zhou, Yudong Wang, Jun Fu

IEEE International Symposium on Circuits and Systems proceedings

DOI

2017

Novel method to determine base resistance in sige HBT from small‐signalS‐parameters measurement

Yabin Sun, Jun Fu, Yudong Wang, Wei Gang Zhou, Xiaojin Li, Yanling Shi

Microwave and Optical Technology Letters

DOI

2016

Extraction of temperature dependences of small-signal model parameters in SiGe HBT HICUM model

Yabin Sun, Jun Fu, Yudong Wang, Wei Gang Zhou, Wei Zhang, Zhihong Liu

Chinese Physics B

DOI

2016

PID在微波射频功率放大器中的应用研究

付军

《阴山学刊(自然科学版)》

2016

The Influence of Microwave Pulse Width on the Thermal Burnout Effect of an LNA Constructed by the SiGe HBT

Lun Hou, Zhengwei Du, Jun Fu

IEEE Transactions on Electromagnetic Compatibility

DOI

2016

Experimental study of bias dependence of pulsed laser-induced single-event transient in SiGe HBT

Yabin Sun, Jun Fu, Yudong Wang, Wei Gang Zhou, Zhihong Liu, Xiaojin Li, Yanling Shi

Microelectronics Reliability

DOI

2016

In-suit investigation of DC characteristics degradation in SiGe HBT included by halogen lamp irradiation

Yabin Sun, Jun Fu, Yudong Wang, Wei Gang Zhou, Xiaojin Li, Yanling Shi

Superlattices and Microstructures

DOI

2016

Direct analytical parameter extraction for SiGe HBTs T-topology small-signal equivalent circuit

Yabin Sun, Jun Fu, Yudong Wang, Wei Gang Zhou, Wei Zhang, Zhihong Liu

Superlattices and Microstructures

DOI

2016

Analysis and design of a 400MHz-6GHz quadrature demodulator with high linearity

Yadi Guo, Jun Fu, Baoyong Chi, Yudong Wang, Jie Cui

International Symposium on Next-Generation Electronics

DOI

2016

DESIGN OF 900 MHZ SIGE POWER AMPLIFIER WITH LINEARIZATION BIAS CIRCUIT

Guiheng Zhang, Wei Zhang, Jun Fu, Yudong Wang

Progress In Electromagnetics Research C

DOI

2015

一种C波段单片全集成SiGe BiCMOS功率放大器

乔晓明，张为，付军，王玉东，曹锐，李庄

《微电子学与计算机》

2015

SiGe HBT的线性度研究（英文）

张贵恒，张为，付军，王玉东

《固体电子学研究与进展》

2015

Analysis and design of a high linearity quadrature demodulator based on SiGe BiCMOS process

Yadi Guo, Renyuan Chang, Jun Fu, Baoyong Chi, Yudong Wang

IEEE International Conference on ASIC (ASICON)

DOI

2015

An Improved Small-Signal Model for SiGe HBT Under OFF-State, Derived From Distributed Network and Corresponding Model Parameter Extraction

Yabin Sun, Jun Fu, Ji‐Woon Yang, Jun Xu, Yudong Wang, Jie Cui, Wei Gang Zhou, Wei Zhang, Zhi‐Hong Liu

IEEE Transactions on Microwave Theory and Techniques

DOI

2015

Novel analytical parameter extraction for SiGe HBTs based on the rational function fitting

Yabin Sun, Jun Fu, Ji‐Woon Yang, Jun Xu, Yudong Wang, Wei Gang Zhou, Wei Zhang, Jie Cui, Gaoqing Li, Zhihong Liu

Superlattices and Microstructures

DOI

2015

Analysis and Design of a Broadband SiGe HBT Image-Reject Mixer Integrating Quadrature Signal Generator

Yatao Peng, Lijun Zhang, Jun Fu, Yudong Wang

IEEE Transactions on Microwave Theory and Techniques

DOI

2015

Modified output impedance matching solution for load modulation power amplifier performance enhancing

Yatao Peng, Lijun Zhang, Jun Fu, Yudong Wang, Yongqing Leng

IET Microwaves Antennas & Propagation

DOI

2015

An accurate parameter extraction method for RF LDMOSFET small-signal model

Wenna Song, Jun Fu, Yudong Wang, Wei Gang Zhou, Wei Zhang, Jie Cui, Yue Zhao, Gaoqing Li, Zhihong Liu

IEEE International Wireless Symposium

DOI

2015

A 400MHz to 4GHz image-reject up convert mixer integrated a broadband quadrature signal generator

Yatao Peng, Lijun Zhang, Yanzhao Shen, Jun Fu, Yudong Wang

IEEE International Wireless Symposium

DOI

2015

Compact Dual-band Bandpass Filter Using Coupled Lines Multimode Resonator

Yatao Peng, Lijun Zhang, Jun Fu, Yudong Wang, Yongqing Leng

IEEE Microwave and Wireless Components Letters

DOI

2014

Novel method to determine base resistance in SiGe HBT HICUM based on rational function fitting

Yabin Sun, Jun Fu, Ji‐Woon Yang, Jun Xu, Yudong Wang, Wei Gang Zhou, Wei Zhang, Jie Cui, Zhihong Liu

IEEE International Conference on Solid-State and Integrated Circuit Technology

DOI

2014

Impact of bias conditions on performance degradation in SiGe HBTs irradiated by 10MeV Br ion

Yabin Sun, Jun Fu, Jun Xu, Yudong Wang, Wei Gang Zhou, Wei Zhang, Jie Cui, Gaoqing Li, Zhihong Liu

Microelectronics Reliability

DOI

2014

Novel extraction of emitter resistance of SiGe HBTs from forward-Gummel measurements

Ji‐Woon Yang, Jun Fu, Yabin Sun, Yudong Wang, Wei Gang Zhou, Wei Zhang, Jie Cui, Gaoqing Li, Zhihong Liu

IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

DOI

2014

Degradation differences in the forward and reverse current gain of 25MeV Si ion irradiated SiGe HBT

Yabin Sun, Jun Fu, Jun Xu, Yudong Wang, Wei Gang Zhou, Wei Zhang, Jie Cui, Gaoqing Li, Zhihong Liu

Physica B Condensed Matter

DOI

2014

Hierarchical layout design of power SiGe HBTs

Leqi Zhang, Jun Fu, Liyang Pan, Yudong Wang, Bo Song, Jie Cui, Wei Zhang, Zhihong Liu

International Symposium on Next-Generation Electronics

DOI

2014

Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation

Yabin Sun, Jun Fu, Jun Xu, Yudong Wang, Wei Gang Zhou, Wei Zhang, Jie Cui, Gaoqing Li, Zhihong Liu

Chinese Physics B

DOI

2014

Analysis, design and implementation of SiGe wideband dual-feedback low noise amplifier

Wei Zhang, Bo Song, Jun Fu, Yudong Wang, Jie Cui, Gaoqing Li, Wei Zhang, Zhihong Liu

Transactions of Tianjin University

DOI

2013

Investigation of bias dependence on enhanced low dose rate sensitivity in SiGe HBTs for space application

Yabin Sun, Jun Fu, Jun Xu, Yudong Wang, Wei Gang Zhou, Wei Zhang, Jie Cui, Gaoqing Li, Zhihong Liu

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment

DOI

2013

Bias dependence of ionizing radiation damage in SiGe HBTs at different dose rates

Yabin Sun, Jun Fu, Jun Xu, Yudong Wang, Wei Gang Zhou, Wei Zhang, Jie Cui, Gaoqing Li, Zhihong Liu

Physica B Condensed Matter

DOI

2013

The reliability of SiGe HBT under swift heavy ion irradiation

Yabin Sun, Jun Fu, Jun Xu, Yudong Wang, Wei Gang Zhou, Wei Zhang, Jie Cui, Gaoqing Li, Zhihong Liu

IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

DOI

2013

Irradiation effects of 25 MeV silicon ions on SiGe heterojunction bipolar transistors

Yabin Sun, Jun Fu, Jun Xu, Yudong Wang, Wei Gang Zhou, Wei Zhang, Jie Cui, GaoQing Li, Zhihong Liu

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

DOI

2013

A single-event transient induced by a pulsed laser in a silicon—germanium heterojunction bipolar transistor

Yabin Sun, Jun Fu, Jun Xu, Yudong Wang, Wei Gang Zhou, Wei Zhang, Jie Cui, Gaoqing Li, Zhihong Liu, Yongtao Yu, Yingqi Ma, Guoqiang Feng, Jianwei Han

Chinese Physics B

DOI

2013

The total-dose-effects of gamma and proton irradiations on high-voltage silicon–germanium heterojunction bipolar transistors

Yabin Sun, Jun Fu, Jun Xu, Yudong Wang, Ji‐Woon Yang, Wei Gang Zhou, Wei Zhang, Jie Cui, Gaoqing Li, Zhihong Liu, Sumin Wei, Feng Wang, Fengping Guan, Peng-Zhan Li, Tian-Jue Zhang

Radiation effects and defects in solids

DOI

2012

An analytical model for the drain—source breakdown voltage of RF LDMOS power transistors with a Faraday shield

Wenmin Zhang, Wei Zhang, Jun Fu, Yudong Wang

Journal of Semiconductors

DOI

2011

SiGe HBT MEXTRAM模型参数的直接提取

周佩明，付军，周天舒，李平梁，徐向明，王玉东，张伟，崔杰，刘志弘

《微电子学》

2010

A practical noise parameter measurement method of packaged Low noise transistor

Di Liu, Wei Gang Zhou, Yudong Wang, Jun Fu, Gaoqing Li, Jie Cui

International Conference on Microwave and Millimeter Wave Technology (ICMMT)

DOI

2009

Small-signal model parameter extraction for microwave SiGe HBTs based onY- andZ-parameter characterization

Jun Fu

Journal of Semiconductors

DOI

2008

异质结位置对缓变集电结SiGe HBT性能的影响(英文)

雒睿，张伟，付军，刘道广，严利人

Journal of Semiconductors

1997

红外区熔再结晶SOI GEXSi1-X合金沟道P-MOSFET的研究

付军，栾洪发，田立林，钱佩信，周均铭

Journal of Semiconductors

精选作品

期刊论文

宽温范围内SiGe HBT器件集约模型及参数提取方法

Physical insights into SiGe HBT operation at cryogenic temperatures: gain enhancement and early effect mechanisms

AlN and LGS Surface Acoustic Wave Resonators for Passive Wireless High-Temperature Sensing

Annealing Activation Effect of Pt Electrodes on SAW Devices with Langasite Substrate and the Mechanism Analysis

Thermal Gas Flow Sensor Using SiGe HBT Oscillators Based on GaN/Si SAW Resonators

Accurate Gummel Parameter Extraction for SiGe HBTs with Temperature-Dependent Saturation Current and Ideality Factor Models

Wide Temperature Behavior Analyses of SiGe HBTs Based on Small-Signal Parameter Extraction Method

Cryogenic Characterization and Turn-on Voltage Extraction of SiGe HBTs with Consideration of Incomplete Ionization Effects

Experimental Characterization of SiGe HBTs Under Wide-Temperature Conditions for Cryogenic Electronics

Advanced Process Module Development of SiGe HBT

Wide-Temperature Characterization of Surface Acoustic Wave Devices with AlN/Sapphire Structure

Thru Based Method with the Aid of Electromagnetic Simulation for Millimeter-Wave De-embedding

Effects of co-60 gamma-ray irradiation on the DC and RF characteristics of SiGe HBTs

Investigation of Base Transport Mechanism in Silicon-Germanium Heterojunction Bipolar Transistor Operating over Wide Temperature Range

Design and Optimization for 77 GHz Series-Fed Patch Array Antenna Based on Genetic Algorithm

A Miniaturized Integrated SAW Sensing System for Relative Humidity Based on Graphene Oxide Film

Degradation and annealing characteristics of NPN SiGe HBT exposed to heavy ions irradiation

A Novel Parameter Extraction Technique of Microwave Small-Signal Model for Nanometer MOSFETS

Scalable Modeling for the Coplanar Waveguide Step Discontinuity at Frequency up to 150 GHz

Scalable Modeling for the CPW Gap Discontinuity at Frequency up to 150 GHz

A Complete Small-Signal MOSFET Model and Parameter Extraction Technique for Millimeter Wave Applications

Investigation of total dose effects in SiGe HBTs under different exposure conditions

On-chip bias circuit for W-band silicon–germanium power amplifier

Application of the Genetic Algorithm in MOSFET Modeling and Parameter Extraction

Design of 85 GHz High Power Gain SiGe Buffer with Transformer Matching Network

An amplifier-doubler chain with conversion gain improvement techniques

Design of 0.35–1.5 GHz 16‐input and 8‐output switch matrix with 5 × 5 chessboard structure

De-embedding and electromagnetic simulation calibration of on-wafer passive devices for millimeter wave integrated circuit design support

Automatic and scalable parametric modeling for 1–100GHz transmission line

A 77GHz power amplifier design scheme for automotive radar

Evaluation of the distributed deembedding methods for 40GHz CMOS transistor on-wafer characterization

Design of 0.35–1.5GHz 2-input 3-output SiGe switch cell with active balun

Offset based feedforward amplifier with nonlinearity compensation and P1dB expansion

Novel method to determine base resistance in sige HBT from small‐signalS‐parameters measurement

Extraction of temperature dependences of small-signal model parameters in SiGe HBT HICUM model

PID在微波射频功率放大器中的应用研究

The Influence of Microwave Pulse Width on the Thermal Burnout Effect of an LNA Constructed by the SiGe HBT

Experimental study of bias dependence of pulsed laser-induced single-event transient in SiGe HBT

In-suit investigation of DC characteristics degradation in SiGe HBT included by halogen lamp irradiation

Direct analytical parameter extraction for SiGe HBTs T-topology small-signal equivalent circuit

Analysis and design of a 400MHz-6GHz quadrature demodulator with high linearity

DESIGN OF 900 MHZ SIGE POWER AMPLIFIER WITH LINEARIZATION BIAS CIRCUIT

一种C波段单片全集成SiGe BiCMOS功率放大器

SiGe HBT的线性度研究（英文）

Analysis and design of a high linearity quadrature demodulator based on SiGe BiCMOS process

An Improved Small-Signal Model for SiGe HBT Under OFF-State, Derived From Distributed Network and Corresponding Model Parameter Extraction

Novel analytical parameter extraction for SiGe HBTs based on the rational function fitting

Analysis and Design of a Broadband SiGe HBT Image-Reject Mixer Integrating Quadrature Signal Generator

Modified output impedance matching solution for load modulation power amplifier performance enhancing

An accurate parameter extraction method for RF LDMOSFET small-signal model

A 400MHz to 4GHz image-reject up convert mixer integrated a broadband quadrature signal generator

Compact Dual-band Bandpass Filter Using Coupled Lines Multimode Resonator

Novel method to determine base resistance in SiGe HBT HICUM based on rational function fitting

Impact of bias conditions on performance degradation in SiGe HBTs irradiated by 10MeV Br ion

Novel extraction of emitter resistance of SiGe HBTs from forward-Gummel measurements

Degradation differences in the forward and reverse current gain of 25MeV Si ion irradiated SiGe HBT

Hierarchical layout design of power SiGe HBTs

Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation

Analysis, design and implementation of SiGe wideband dual-feedback low noise amplifier

Investigation of bias dependence on enhanced low dose rate sensitivity in SiGe HBTs for space application

Bias dependence of ionizing radiation damage in SiGe HBTs at different dose rates

The reliability of SiGe HBT under swift heavy ion irradiation

Irradiation effects of 25 MeV silicon ions on SiGe heterojunction bipolar transistors

A single-event transient induced by a pulsed laser in a silicon—germanium heterojunction bipolar transistor

The total-dose-effects of gamma and proton irradiations on high-voltage silicon–germanium heterojunction bipolar transistors

An analytical model for the drain—source breakdown voltage of RF LDMOS power transistors with a Faraday shield

SiGe HBT MEXTRAM模型参数的直接提取

A practical noise parameter measurement method of packaged Low noise transistor

Small-signal model parameter extraction for microwave SiGe HBTs based onY- andZ-parameter characterization

异质结位置对缓变集电结SiGe HBT性能的影响(英文)

红外区熔再结晶SOI GEXSi1-X合金沟道P-MOSFET的研究

研究方向