庄喆｜南京大学｜学者主页

2026

Buried V-Pit Templates for 20.3% Peak EQE at 640 nm in InGaN Red LEDs

Kun Xing, Junhan Cai, Zhuang Ru, Chenxue Li, Liangyao Lin, Xiaoping Yang, Xing Chen, Yimeng Sang, Zhe Zhuang, Bin Liu

IEEE Electron Device Letters

DOI

2026

Low-threshold 571 nm plasmonic nanolaser from InGaN/GaN nanopillars

Tingting Liu, Yimeng Sang, Chenxue Li, Yunfang Tong, Kun Xing, Tao Tao, Zhe Zhuang, Ting Zhi, Bin Liu

Optics Letters

DOI

2026

Dual-Mode Perovskite/GaN Tandem LEDs With Interlayer-Enabled Voltage-Dependent Color Tuning

Yunfang Tong, Hao Min, Ting Zhi, Zhe Zhuang, Zili Xie, Rongrong Dou, Tao Tao, Bin Liu

IEEE Transactions on Electron Devices

DOI

2026

Towards high-resolution and high-brightness uniformity near-eye display: heterogeneous integration of GaN-based micro-LED on a custom Si CMOS platform

Lu Wang, Junchi Yu, Changbin Qin, Feifan Xu, Haoxuan Yu, Yimeng Sang, Ting Zhi, Wei Zhang, Zhe Zhuang, Tao Tao, Rong Zhang, Bin Liu

Light Advanced Manufacturing

DOI

2026

AlN/GaN/InGaN interface engineering for high-efficiency InGaN-based red quantum wells grown on Si

Chenshu Liu, Jianxun Liu, Xiujian Sun, Yayu Dai, Jianmin Wu, Qian Sun, Zhe Zhuang, Hui Yang

Applied Physics Letters

DOI

2026

P‐12.4: Distinguished Student Paper: Clipping‐Free DBS with Partition Fusion and Inter‐Frame Correlation for μ‐Fluidink Video Display

Xinyue Liu, Congyi Chen, Jinhui Hua, Yanjun Zhang, Jujian Fu, Yuan Ding, Feng Qin, Bin Liu, Zhe Zhuang, Bojia Lyu

SID Symposium Digest of Technical Papers

DOI

2026

Universal Lateral Surface‐Grating Architecture for Violet‐to‐Green Single‐Mode Lasers

Feifan Xu, Q Liu, Jushi Liu, Danfeng Pan, Tao Tao, Jun-long Kou, Zhe Zhuang, Rong Zhang, Bin Liu

Laser & Photonics Review

DOI

2026

Purcell-enhanced lasing in single-crystal perovskite vertical cavity

Yunfang Tong, Xiang Peng, Bingjun Li, Jinpeng Huang, Yue Wang, Hao Min, Zehua Hu, Ting Zhi, Zili Xie, Zhe Zhuang, Tao Tao, Bin Liu

Optics Continuum

DOI

2026

Flexible active-matrix micro-LED display with 1T-1FeMFET architecture featuring scaling-limit-free design

Tingrui Huang, Guangan Yang, Yimeng Sang, Fulin Zhuo, Mingming Liu, Gengyu Li, Heng Cheng, Zuoxu Yu, Zhiyuan Fu, Siyang Liu, Haoliang Shen, Zhihao Yu, Bin Liu, Xinran Wang, Wangran Wu, Runxiao Shi, Zhe Zhuang, Weifeng Sun

Nature Communications

DOI

2026

Electrically pumped single-mode microlasers with omnidirectional radiation for optical broadcasting communication

Feifan Xu, Jushi Liu, Yimeng Sang, Tao Tao, Junlong Kou, Jianping Liu, Ting Zhi, Zhe Zhuang, Rong Zhang, Bin Liu

Science Advances

DOI

2026

Application-specific micro-LED design based on transfer learning

Ying Jiang, Zhuoying Jiang, Na Lin, Mengyue Mo, Penggang Li, Lin Li, Cheng Li, Kai Huang, Jinchai Li, Mengyu Chen, Zhe Zhuang, Tao Tao, Bin Liu, Junyong Kang, Rong Zhang

Journal of Materials Chemistry C

DOI

2025

Micro-LED新型显示技术的现状、挑战及展望

庄喆，刘斌

《科技导报》

2025

Flexible 1T-1FeMTFT Active-matrix Micro-LED Display Utilizing ITO FeMTFT with Record Memory Window of 0.63 V/nm and Low Power Consumption

Tingrui Huang, Guangan Yang, Yimeng Sang, Mingming Liu, Gengyu Li, Heng Cheng, Zuoxu Yu, Zhiyuan Fu, Siyang Liu, Haoliang Shen, Wangran Wu, Runxiao Shi, Zhe Zhuang, Weifeng Sun

Technical digest - International Electron Devices Meeting/Technical digest

DOI

2025

Impact of Template Patterning Dimensions on the Performance of InGaN-Based Red Light-Emitting Diodes

Kun Xing, Haifeng Wang, Liangyao Lin, Zhengxian Jin, Zhengwei Pan, Xiaoping Yang, Zhe Zhuang, Chenxue Li, Yimeng Sang, Tao Tao, Bin Liu

IEEE Transactions on Electron Devices

DOI

2025

Investigation on fabrication and physical mechanisms of single-contact AC-driven nano-LED devices

Junchi Yu, Ting Zhi, Dongqi Zhang, Jinpeng Huang, Feifan Xu, Rongrong Dou, Zhe Zhuang, Zili Xie, Bin Liu, Tao Tao

Applied Physics Letters

DOI

2025

Semi-polar (20-21) GaN microwire LED fabricated by laser lift-off and mechanical bending

Yun Zhang, Hao Sun, Zhe Zhuang, Tao Tao, Kun Xing, Bin Liu, Yunxia Ye

Optics Letters

DOI

2025

Demonstration of 633-nm InGaN-based red light-emitting diodes on a semipolar (11–22) GaN template

Kun Xing, Zhengwei Pan, Haifeng Wang, Yimeng Sang, Yun Zhang, Tao Tao, Zhe Zhuang, Rong Zhang, Bin Liu

Optics Communications

DOI

2025

Nondestructive Single-Contact Electroluminescence Inspection of LED With High Accuracy

Jinpeng Huang, Ting Zhi, Tao Tao, Qingxiang Niu, Tongzhou Fei, Feifan Xu, Yimeng Sang, Junchi Yu, Rongrong Dou, Dongqi Zhang, Zili Xie, Yu Yan, Zhe Zhuang, Xuecou Tu, Jun-long Kou, Yuan Du, Bin Liu

IEEE Electron Device Letters

DOI

2025

Two-dimensional buffer breaks substrate limit in III-nitrides epitaxy

Yimeng Sang, Xiangming Xu, Ying Wu, Guanqun Feng, Xu Zhang, Fulin Zhuo, Zhengxian Jin, Hui Guo, Tao Tao, Sunan Ding, Xuefeng Wang, Dunjun Chen, Kazuhiro Ohkawa, Kun Xing, Xinran Wang, Zhe Zhuang, Rong Zhang, Husam Niman Alshareef, Bin Liu

Science Advances

DOI

2025

Easy-peeling growth of triangular hBN flakes and their demonstration in vacuum ultraviolet photodetectors

Yuyao Zhang, Jianguo Zhao, Zhiyong Wu, Hui Zhang, Ru Xu, Shenyu Xu, Bin Liu, Zhe Zhuang, Tao Tao, Jiangyong Pan, Lixi Wang, Jianhua Chang

Journal of Materials Chemistry C

DOI

2025

Dual-mode operation of GaN-based p-i-n diodes for electroluminescent emission and self-powered photodetection.

Yu Ding, Yimeng Sang, Zhe Zhuang, Huiqin Zhao, Feifan Xu, Tao Tao, Dun-Jun Chen, Jiandong Ye, Rong Zhang, Bin Liu

Optics Letters

DOI

2025

Micro-LED for short distance Optical Links with Low Power consumption

Feifan Xu, Rui Zhao, Tao Tao, T. Zhi, Pengfei Tian, Gao-Qiang Deng, Zhe Zhuang, Zi-Li Xie, Yuan-Tao Zhang, Rong Zhang, Bin Liu

Optics Letters

DOI

2024

极性、半极性和非极性InN薄膜的MOCVD外延生长与表征

Jianguo ZHAO, YIN Rui, Ru XU, Haibin Ni, Tao Tao, Zhe Zhuang, Yan Yu, Zili Xie, Bin Liu, Jianhua CHANG

Chinese Journal of Luminescence

DOI

2024

Investigation of InGaN-based flexible RGB micro-light-emitting diodes and their monolithic integration

Chenxue Li, Yong Li, Yimeng Sang, Zhe Zhuang, Dongming Tang, Kun Xing, Fulin Zhuo, Yuliang Bian, Tingting Liu, Taotao Li, Ting Zhi, Tao Tao, Daisuke Iida, Kazuhiro Ohkawa, Xinran Wang, Rong Zhang, Bin Liu

Applied Physics Letters

DOI

2024

Flexible Active-Matrix Micro-LED Display Utilizing InSnO TFTs with High Mobility of 39.1 cm2V-1s-1 and Mass-Production Compatible Process

Zuoxu Yu, Yimeng Sang, Yuzhen Zhang, Yiyang Zhang, Runxiao Shi, Siyang Liu, Tao Tao, Xifeng Li, Cong Peng, Rong Zhang, Wangran Wu, Zhe Zhuang, Bin Liu, Weifeng Sun

Technical digest - International Electron Devices Meeting/Technical digest

DOI

2024

Self-powered MXene/GaN van der Waals Schottky ultraviolet photodetectors with exceptional responsivity and stability

Yu Ding, Xiangming Xu, Zhe Zhuang, Yimeng Sang, Mei Cui, Wenxin Li, Yan Yu, Tao Tao, Weizong Xu, Fangfang Ren, Jiandong Ye, Dunjun Chen, Hai Lu, Rong Zhang, Husam Niman Alshareef, Bin Liu

Applied Physics Reviews

DOI

2024

Enhanced Performance of GaN-Based Single Contact Micro-LED Driven by AC Power Utilizing the Tunnel Junction

Dongqi Zhang, Tao Tao, Ting Zhi, Zhe Zhuang, Feifan Xu, Yimeng Sang, Junchi Yu, Yu Yan, Kangkai Tian, Zi‐Hui Zhang, Jiachen Zhang, Bin Liu

IEEE Transactions on Electron Devices

DOI

2024

Analysis of the mechanisms by which sputtered AlN nucleation layers enhance the performance of red InGaN-based LEDs

Kun Xing, Zhengxian Jin, Zhihu Xia, Junwei Hu, Xiaoping Yang, Yimeng Sang, Tao Tao, Zhe Zhuang, Rong Zhang, Bin Liu

Optics Express

DOI

2024

Ultra-Small Size Micro-LEDs With Enhanced Efficiency for Near-Eye Display

Feifan Xu, Tao Tao, Dongqi Zhang, Yimeng Sang, Junchi Yu, Honghui He, Jinpeng Huang, Ting Zhi, Zhe Zhuang, Zili Xie, Rong Zhang, Bin Liu

IEEE Electron Device Letters

DOI

2024

High-Performance Solar-Blind Photodetector Based on (010)-Plane β-Ga2O3 Thermally Oxidized from Nonpolar (110)-Plane GaN

Jianguo Zhao, Rui Yin, Ru Xu, Hui Zhang, Kai Chen, Shenyu Xu, Tao Tao, Zhe Zhuang, Bin Liu, Yuwei Xiong, Jianhua Chang

ACS Applied Materials & Interfaces

DOI

2024

High-temperature performance of InGaN-based amber micro-light-emitting diodes using an epitaxial tunnel junction contact

Yimeng Sang, Zhe Zhuang, Kun Xing, Dongqi Zhang, Jinjian Yan, Zhuoying Jiang, Chenxue Li, Kai Chen, Yu Mei Ding, Tao Tao, Daisuke Iida, Ke Wang, Cheng Li, Kai Huang, Kazuhiro Ohkawa, Rong Zhang, Bin Liu

Applied Physics Letters

DOI

2024

Monolithic Integration of GaN-Based Transistors and Micro-LED

Honghui He, Jinpeng Huang, Tao Tao, Ting Zhi, Kaixin Zhang, Zhe Zhuang, Yu Yan, Bin Liu

Nanomaterials

DOI

2024

Rapid modulation bandwidth test system of micro-LED based on photon excitation

Qingxiang Niu, Yongsheng Hong, Hui Jin, Tao Tao, Feifan Xu, Ting Zhi, Rongrong Dou, Zili Xie, Zhe Zhuang, Yan Yu, Wenjuan Chen, Cheng Qu, Wengang Bi, Bin Liu

Optics Letters

DOI

2024

Investigation of Ohmic contact to plasma-etched n-Al0.5Ga0.5N by surface treatment

Shenhui Zhou, Yu Mei Ding, Zhe Zhuang, Yimeng Sang, Kai Chen, Feifan Xu, Junchi Yu, Tao Tao, Ting Zhi, Hai Lu, Rong Zhang, Bin Liu

Semiconductor Science and Technology

DOI

2024

P‐11.2: Study on the Optical Compensation Improvement Effect of Micro LEDs at Various Brightness Levels

Zhiyang Hao, Xi li, Shuang Zhao, Bojia Lyu, Zhe Zhuang, Bin Liu

SID Symposium Digest of Technical Papers

DOI

2023

Effects of Mg-doping temperature on the structural and electrical properties of nonpolar a-plane p-type GaN films

Kai Chen, Jian-Guo Zhao, Yu-Xun Ding, Wenxiao Hu, Bin Liu, T. Tao, Zhe Zhuang, Yu Yan, Zi-Li Xie, Jian-Hua Chang, Rong Zhang, You-Liao Zheng

Chinese Physics B

DOI

2023

Optimizing Al Composition in Barriers for InGaN Amber Micro-LEDs With High Wall-Plug Efficiency

Yimeng Sang, Zhe Zhuang, Kun Xing, Zhuoying Jiang, Chenxue Li, Feifan Xu, Dongqi Zhang, Junchi Yu, Jianguo Zhao, Ting Zhi, Tao Tao, Cheng Li, Kai Huang, Kazuhiro Ohkawa, Rong Zhang, Bin Liu

IEEE Electron Device Letters

DOI

2023

Achieving InGaN-Based Red Light-Emitting Diodes by Increasing the Growth Pressure of Quantum Wells

Kun Xing, Zhihu Xia, Guangxia Xie, Zhengwei Pan, Zhe Zhuang, Junwei Hu, Yimeng Sang, Tao Tao, Xiaoping Yang, Bin Liu, Rong Zhang

IEEE Photonics Technology Letters

DOI

2023

Wafer-scale emission uniformity of InGaN-based red light-emitting diodes on an in situ InGaN decomposition template

Junwei Hu, Kun Xing, Zhihu Xia, Yimeng Sang, Xiaoping Yang, Tao Tao, Zhe Zhuang, Rong Zhang, Bin Liu

Applied Physics Letters

DOI

2023

Effects of Buffer Layer on Structural Properties of Nonpolar (112¯0)-Plane GaN Film

Jianguo Zhao, Boyan Suo, Ru Xu, Tao Tao, Zhe Zhuang, Bin Liu, Xiong Zhang, Jianhua Chang

Crystals

DOI

2023

Optimized InGaN/GaN Quantum Structure for High-Efficiency Micro-LEDs Displays With Low Current Injection

Feifan Xu, Guobin Wang, Tao Tao, Zhe Zhuang, Qiang Yan, Ting Zhi, Zili Xie, Bin Liu, Wengang Bi, Ke Xu, Rong Zhang

IEEE Transactions on Electron Devices

DOI

2023

Monolithic Integration of GaN-Based Green Micro-LED and Quasi-Vertical MOSFET Utilizing a Hybrid Tunnel Junction

Yimeng Sang, Dongqi Zhang, Zhe Zhuang, Junchi Yu, Feifan Xu, Di Jiang, Ke Wang, Tao Tao, Xinran Wang, Rong Zhang, Bin Liu

IEEE Electron Device Letters

DOI

2023

Dominant Mechanism of GaN-Based Single Contact Micro-LED Driven by AC Power

Dongqi Zhang, Feifan Xu, Yimeng Sang, Junchi Yu, Tao Tao, Zhe Zhuang, Ting Zhi, Yu Yan, Bin Liu, Rong Zhang, Yi Zheng

IEEE Electron Device Letters

DOI

2023

Wafer-Scale Monolithic Integration of Blue Micro-Light-Emitting Diodes and Green/Red Quantum Dots for Full-Color Displays

Feifan Xu, Tao Tao, Dongqi Zhang, Yang Zhang, Yimeng Sang, Junchi Yu, Ting Zhi, Zhe Zhuang, Zili Xie, Rong Zhang, Bin Liu

IEEE Electron Device Letters

DOI

2023

Rapid growth of a 24 mm 2 scale hexagonal boron nitride crystal in Ni–Cr solution

Jianguo Zhao, Haichao Wang, Yue Yu, Minhui Yang, Ru Xu, Hui Zhang, Jiangyong Pan, Yuanyuan Li, Xiang Liu, Tao Tao, Zhe Zhuang, Bin Liu, Jianhua Chang

Journal of Materials Chemistry C

DOI

2023

Investigation of highly reflective p-electrodes for AlGaN-based deep-ultraviolet light-emitting diodes.

Yu Ding, Shen-hui Zhou, Zhe Zhuang, Yimeng Sang, Junchi Yu, Feifan Xu, Jin-Peng Huang, Wei-Zong Xu, T. Tao, T. Zhi, Hai Lu, Kai Huang, Rong Zhang, Bin Liu

Optics Express

DOI

2022

Gallium Nitride Blue/Green Micro-LEDs for High Brightness and Transparency Display

Junchi Yu, Feifan Xu, Tao Tao, Bin Liu, Bin Wang, Yimeng Sang, Shihao Liang, Yang Chen, Meixin Feng, Zhe Zhuang, Zili Xie, Xiaojuan Sun, Yi Zheng, Kai Huang, Rong Zhang

IEEE Electron Device Letters

DOI

2022

Cascade GaN-based micro-photodiodes for photonic integration

Bin Wang, Shihao Liang, Junchi Yu, Feifan Xu, Dongqi Zhang, Tao Tao, Ting Zhi, Xiaoyan Liu, Zhe Zhuang, Zili Xie, Bin Liu, Rong Zhang

Journal of Physics D Applied Physics

DOI

2022

Enhanced Resonant Energy Transfer by Decorating Au Nanoparticles on the Sidewalls of InGaN Multiple‐Quantum‐Well Nanorods

Yimeng Sang, Zhe Zhuang, Tao Tao, Dongqi Zhang, Kai Chen, Ting Zhi, Zili Xie, Bin Liu, Rong Zhang

physica status solidi (RRL) - Rapid Research Letters

DOI

2022

Demonstration of 606nm-wavelength InGaN-based amber micro-LEDs toward red emission

Zhe Zhuang, D. Iida, Martin Velazquez-Rizo, Kazuhiro Ohkawa

Gallium Nitride Materials and Devices XVII

DOI

2022

Analysis of the n-GaN electrochemical etching process and its mechanism in oxalic acid

Artem Shushanian, D. Iida, Zhe Zhuang, Yu-Jin Han, Kazuhiro Ohkawa

RSC Advances

DOI

2022

InGaN-based green micro-LED efficiency enhancement by hydrogen passivation of the p-GaN sidewall

P. Kirilenko, D. Iida, Zhe Zhuang, Kazuhiro Ohkawa

Applied Physics Express

DOI

2022

MOVPE-grown InGaN quantum-well red micro-LEDs

Kazuhiro Ohkawa, D. Iida, Zhe Zhuang

Gallium Nitride Materials and Devices XVII

DOI

2022

Passivation of Surface States in GaN by NiO Particles

Martin Velazquez-Rizo, P. Kirilenko, D. Iida, Zhe Zhuang, Kazuhiro Ohkawa

Crystals

DOI

2022

Reduction of hexagonal defects in N-polar AlGaN epitaxial layers grown with reformed pulsed-flow technology

Yong Tian, Xiong Zhang, Aijie Fan, Yang Shen, Shuai Chen, Bin Chen, Xu-Guang Luo, Zhe Zhuang, Jiadong Lyu, Guo-Hua Hu, Yi-Ping Cui

Materials Science in Semiconductor Processing

DOI

2022

The performance of InGaN-based red/green micro-LEDs

Zhe Zhuang, D. Iida, Martin Velazquez-Rizo, Kazuhiro Ohkawa

Gallium Nitride Materials and Devices XVII

DOI

2022

Demonstration of 621-nm-wavelength InGaN-based single-quantum-well LEDs with an external quantum efficiency of 4.3% at 10.1 A/cm2

D. Iida, P. Kirilenko, Martin Velazquez-Rizo, Zhe Zhuang, M. Najmi, Kazuhiro Ohkawa

AIP Advances

DOI

2022

InGaN-based RGB micro-LED arrays

Kazuhiro Ohkawa, Zhe Zhuang, D. Iida, Martin Velazquez-Rizo

Light-Emitting Devices, Materials, and Applications XXVI

DOI

2022

High-brightness InGaN-based red microLEDs exceeding 1 mW/mm2

Zhe Zhuang, D. Iida, Martin Velazquez-Rizo, Kazuhiro Ohkawa

Light-Emitting Devices, Materials, and Applications XXVI

DOI

2022

Improved surface morphology and crystalline quality of semi-polar (<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.svg"><mml:mrow><mml:mn>11</mml:mn><mml:mover accent="true"><mml:mn>2</mml:mn><mml:mo>‾</mml:mo></mml:mover><mml:mn>2</mml:mn></mml:mrow></mml:math>) AlN epilayer wi

Xu-Guang Luo, Xiong Zhang, Bin Chen, Yang Shen, Yong Tian, Aijie Fan, Shuai Chen, Yingda Qian, Zhe Zhuang, Guo-Hua Hu

Materials Science in Semiconductor Processing

DOI

2021

Study of electrical and structural properties of non-polar a-plane p-AlGaN epi-layers with various Al compositions

Aijie Fan, Xiong Zhang, Shu-Chang Wang, Cheng Li, Shuai Chen, Zhe Zhuang, Jia-Qi He, Guo-Hua Hu, Yi-Ping Cui

DOI

2021

InGaN-based red light-emitting diodes: from traditional to micro-LEDs

Zhe Zhuang, D. Iida, Kazuhiro Ohkawa

Japanese Journal of Applied Physics

DOI

2021

Optical properties of quasi-ordered 112̅2 AlGaN multi-quantum-well nanorod arrays

Aijie Fan, Zhe Zhuang, Xiong Zhang, Cheng Li, Haitao Jiang, Shuai Chen, Xu-Guang Luo, Guo-Hua Hu, Yi-Ping Cui

DOI

2021

606-nm InGaN Amber Micro-Light-Emitting Diodes With an On-Wafer External Quantum Efficiency of 0.56%

Zhe Zhuang, D. Iida, Martin Velazquez-Rizo, Kazuhiro Ohkawa

IEEE Electron Device Letters

DOI

2021

Epitaxial growth of semi-polar (11–22) plane AlInGaN quaternary alloys on m-plane (10-10) sapphire substrates

L. Rao, Xiong Zhang, Aijie Fan, Shuai Chen, Cheng Li, Jia-Qi He, Zhe Zhuang, Jiadong Lyu, Guo-Hua Hu, Yi-Ping Cui

DOI

2021

The efficiency enhancement of InGaN-based red LEDs with thick GaN underlying layers

D. Iida, Zhe Zhuang, P. Kirilenko, Martin Velazquez-Rizo, M. Najmi, Kazuhiro Ohkawa

DOI

2021

Influence of plasmonic resonant wavelength on energy transfer from an InGaN quantum well to quantum dots

Zhe Zhuang, Cheng Li, Yun Zhang, Bin Liu, Xiong Zhang, Aijie Fan, Shuai Chen, Liang Lu, Yi-Ping Cui

DOI

2021

Improved performance of InGaN-based red light-emitting diodes by micro-hole arrays.

Zhe Zhuang, D. Iida, P. Kirilenko, Kazuhiro Ohkawa

Optics Express

DOI

2021

630-nm red InGaN micro-light-emitting diodes (<20 μm × 20 μm) exceeding 1 mW/mm2 for full-color micro-displays

Zhe Zhuang, D. Iida, Martin Velazquez-Rizo, Kazuhiro Ohkawa

Photonics Research

DOI

2021

Ultra-small and ultra-dense InGaN-based RGB monochromatic micro-light-emitting diode arrays by pixelation of conductive p-GaN

Zhe Zhuang, D. Iida, Kazuhiro Ohkawa

Photonics Research

DOI

2021

665-nm-wavelength InGaN-based red LEDs with low forward voltage operation

D. Iida, Zhe Zhuang, P. Kirilenko, Martin Velazquez-Rizo, M. Najmi, Kazuhiro Ohkawa

DOI

2021

Impact of composite last quantum barrier on the performance of AlGaN-based deep ultraviolet light-emitting diode

Liang Lu, Xiong Zhang, Shu-Chang Wang, Aijie Fan, Shuai Chen, Cheng Li, Abbas Nasir, Zhe Zhuang, Guo-Hua Hu, Yi-Ping Cui

Journal of Materials Science: Materials in Electronics

DOI

2021

Investigation of InGaN-based red/green micro-light-emitting diodes.

Zhe Zhuang, D. Iida, Kazuhiro Ohkawa

Optics Letters

DOI

2021

Achievement of polarity reversion from Al(Ga)-polar to N-polar for AlGaN film on AlN seeding layer grown by a novel flow‐modulation technology

Jin Zhang, Xiong Zhang, Aijie Fan, Shuai Chen, Jia-Qi He, Abbas Nasir, Zhe Zhuang, Jiadong Lyu, Guo-Hua Hu, Yi-Ping Cui

Journal of materials science. Materials in electronics

DOI

2021

Investigation of a Separated Short-Wavelength Peak in InGaN Red Light-Emitting Diodes

P. Kirilenko, Zhe Zhuang, D. Iida, Martin Velazquez-Rizo, Kazuhiro Ohkawa

Crystals

DOI

2021

Ultra-small InGaN green micro-light-emitting diodes fabricated by selective passivation of p-GaN.

Zhe Zhuang, D. Iida, Martin Velazquez-Rizo, Kazuhiro Ohkawa

Optics Letters

DOI

2021

Red Ingan-Leds Using Strain-Compensated Quantum Well Structures

Kazuhiro Ohkawa, D. Iida, Zhe Zhuang

DOI

2021

High quality non-polar a-plane AlN template grown on semi-polar r-plane sapphire substrate by three-step pulsed flow growth method

Shuai Chen, Xiong Zhang, Shu-Chang Wang, Aijie Fan, Jia-Qi He, Cheng Li, Liang Lu, L. Rao, Zhe Zhuang, Guo-Hua Hu, Yi-Ping Cui

DOI

2020

Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes.

Zhe Zhuang, D. Iida, P. Kirilenko, Martin Velazquez-Rizo, Kazuhiro Ohkawa

Optics Express

DOI

2020

Effects of Ⅴ/Ⅲ ratio and Cp2Mg flow rate on characteristics of non-polar a-plane Mg-delta-doped p-AlGaN epi-layer

Aijie Fan, Xiong Zhang, Shuai Chen, Cheng Li, Liang Lu, Zhe Zhuang, Jiadong Lyu, Guo-Hua Hu, Yi-Ping Cui

DOI

2020

Effects of size on the electrical and optical properties of InGaN-based red light-emitting diodes

Zhe Zhuang, D. Iida, Kazuhiro Ohkawa

Gallium Nitride Materials and Devices XVI

DOI

2020

Improvement in structural and electrical characteristics of nonpolar a-plane Si-doped n-AlGaN

Shuai Chen, Xiong Zhang, Aijie Fan, Hu Chen, Cheng Li, Liang Lu, L. Rao, Zhe Zhuang, Jiadong Lyu, Guo-Hua Hu, Yi-Ping Cui

Journal of Materials Science

DOI

2020

Demonstration of low forward voltage InGaN-based red LEDs

D. Iida, Zhe Zhuang, P. Kirilenko, Martin Velazquez-Rizo, Kazuhiro Ohkawa

Applied Physics Express

DOI

2020

High-color-rendering-index phosphor-free InGaN-based white light-emitting diodes by carrier injection enhancement via V-pits

D. Iida, Zhe Zhuang, P. Kirilenko, Martin Velazquez-Rizo, Kazuhiro Ohkawa

Applied Physics Letters

DOI

2020

Characterization of optical properties and thermo-optic effect for non-polar AlGaN thin films using spectroscopic ellipsometry

Shuai Chen, Xiong Zhang, Aijie Fan, Hu Chen, Cheng Li, Z. Feng, Jiadong Lyu, Zhe Zhuang, Guo-Hua Hu, Yi-Ping Cui

Journal of Physics D: Applied Physics

DOI

2020

InGaN-based Red LEDs (I) Effect of in-plane residual stress

D. Iida, Zhe Zhuang, P. Kirilenko, Martin Velazquez-Rizo, Kazuhiro Ohkawa

2020

Enhanced performance of N-polar AlGaN-based deep-ultraviolet light-emitting diodes.

Zhe Zhuang, D. Iida, Kazuhiro Ohkawa

Optics Express

DOI

2020

633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress

D. Iida, Zhe Zhuang, P. Kirilenko, Martin Velazquez-Rizo, M. Najmi, Kazuhiro Ohkawa

DOI

2020

Omnidirectional investigation of two-dimensional periodic nanostructure arrays by a two-axis Lloyd’s mirror interferometer

Haitao Jiang, Zhe Zhuang, Xiong Zhang, Cheng Li, Hu Chen, Aijie Fan, Shuai Chen, Xu-Guang Luo, Yi-Ping Cui

DOI

2019

Hybrid Light Emitters and UV Solar‐Blind Avalanche Photodiodes based on III‐Nitride Semiconductors

Bin Liu, Dunjun Chen, Hai Lu, Tao Tao, Zhe Zhuang, Zhengguang Shao, Weizong Xu, Haixiong Ge, Ting Zhi, Fangfang Ren, Jiandong Ye, Zili Xie, Rong Zhang

Advanced Materials

DOI

2019

23.3: Invited Paper: Hybrid III‐Nitride/Nanocrystals White Light‐Emitting Diodes

Qi Wang, Bin Liu, Zhe Zhuang, Tao Tao, Zili Xie, Rong Zhang, Yi Zheng

SID Symposium Digest of Technical Papers

DOI

2017

Lasers: Manipulable and Hybridized, Ultralow‐Threshold Lasing in a Plasmonic Laser Using Elliptical InGaN/GaN Nanorods (Adv. Funct. Mater. 37/2017)

Tao Tao, Ting Zhi, Bin Liu, Jiangping Dai, Zhe Zhuang, Zili Xie, Peng Chen, Fangfang Ren, Dunjun Chen, Yi Zheng, Rong Zhang

Advanced Functional Materials

DOI

2017

Manipulable and Hybridized, Ultralow‐Threshold Lasing in a Plasmonic Laser Using Elliptical InGaN/GaN Nanorods

Tao Tao, Ting Zhi, Bin Liu, Jiangping Dai, Zhe Zhuang, Zili Xie, Peng Chen, Fangfang Ren, Dunjun Chen, Yi Zheng, Rong Zhang

Advanced Functional Materials

DOI

2017

Fabrication of AlGaN nanorods with different Al compositions for emission enhancement in UV range

Jiangping Dai, Bin Liu, Zhe Zhuang, Guotang He, Ting Zhi, Tao Tao, Qingjun Xu, Yi Li, Haixiong Ge, Zili Xie, Rong Zhang

Nanotechnology

DOI

2016

GaN基纳米阵列LED器件制备及发光特性

智婷，陶涛，刘斌，庄喆，谢自力，陈鹏，张荣，郑有炓

《发光学报》

2016

氮化物半导体有序纳米阵列结构及其混合白光LED器件

庄喆

《南京大学》

2016

Improvement of color conversion and efficiency droop in hybrid light-emitting diodes utilizing an efficient non-radiative resonant energy transfer

Zhe Zhuang, Jiangping Dai, Bin Liu, Xu Guo, Yi Li, Tao Tao, Ting Zhi, Guogang Zhang, Zili Xie, Haixiong Ge, Yi Shi, Yi Zheng, Rong Zhang

Applied Physics Letters

DOI

2016

Single nanowire green InGaN/GaN light emitting diodes

Guogang Zhang, Ziyuan Li, Xiaoming Yuan, Fan Wang, Lan Fu, Zhe Zhuang, Fangfang Ren, Bin Liu, Rong Zhang, Hark Hoe Tan, C. Jagadish

Nanotechnology

DOI

2016

Enhanced InGaN/GaN photoelectrodes for visible‐light‐driven hydrogen generation by surface roughening

Ting Zhi, Tao Tao, Bin Liu, Mingxue Li, Zhe Zhuang, Jiangping Dai, Yi Li, Guogang Zhang, Wenjun Luo, Zili Xie, Peng Chen, Dunjun Chen, Zhaosheng Li, Ping Han, Zhigang Zou, Rong Zhang, Yi Zheng

physica status solidi (a)

DOI

2016

Significant improvements in InGaN/GaN nano-photoelectrodes for hydrogen generation by structure and polarization optimization

Tao Tao, Ting Zhi, Bin Liu, Mingxue Li, Zhe Zhuang, Jiangping Dai, Yi Li, Fulong Jiang, Wenjun Luo, Zili Xie, Dunjun Chen, Peng Chen, Zhaosheng Li, Zhigang Zou, Rong Zhang, Yi Zheng

Scientific Reports

DOI

2016

Fabrication of wafer-scale nanopatterned sapphire substrate through phase separation lithography

Xu Guo, Mengyang Ni, Zhe Zhuang, Jiangping Dai, Feixiang Wu, Yushuang Cui, Changsheng Yuan, Haixiong Ge, Yan‐Feng Chen

Applied Physics A

DOI

2016

Light‐Emitting Diodes: High Color Rendering Index Hybrid III‐Nitride/Nanocrystals White Light‐Emitting Diodes (Adv. Funct. Mater. 1/2016)

Zhe Zhuang, Xu Guo, Bin Liu, Fengrui Hu, Yi Zhen Li, Tao Tao, Jiangping Dai, Ting Zhi, Zili Xie, Peng Chen, Dunjun Chen, Haixiong Ge, Xiaoyong Wang, Min Xiao, Yi Shi, Yi Zheng, Rong Zhang

Advanced Functional Materials

DOI

2016

Fabrication and Luminescent Property of GaN Based Light-emitting Diodes with Array Nanorods Structure

T. Zhi, T. Tao, Bin Liu, Zhe Zhuang, Zi-Li Xie, Peng Chen, Rong Zhang, You-Dou Zheng

2016

GANベースのLEDアレイの発光特性と発光特性を研究した。【JST・京大機械翻訳】

T. Zhi, T. Tao, Bin Liu, Zhe Zhuang, Zi-Li Xie, Peng Chen, Rong Zhang, You-Dou Zheng

2015

Optical polarization characteristics of c-plane InGaN/GaN asymmetric nanostructures

Zhe Zhuang, Yi Li, Bin Liu, Xu Guo, Jiangping Dai, Guogang Zhang, Tao Tao, Ting Zhi, Zili Xie, Haixiong Ge, Yi Shi, Yi Zheng, Rong Zhang

Journal of Applied Physics

DOI

2015

Polarized Emission From InGaN/GaN Single Nanorod Light-Emitting Diode

Ting Zhi, Tao Tao, Bin Liu, Zhe Zhuang, Jiangping Dai, Yi Li, Guogang Zhang, Zili Xie, Peng Chen, Rong Zhang

IEEE Photonics Technology Letters

DOI

2015

Great enhancement in the excitonic recombination and light extraction of highly ordered InGaN/GaN elliptic nanorod arrays on a wafer scale

Zhe Zhuang, Xu Guo, Bin Liu, Fengrui Hu, Jiangping Dai, Yun Zhang, Yi Zhen Li, Tao Tao, Ting Zhi, Zili Xie, Haixiong Ge, Xiaoyong Wang, Min Xiao, Tao Wang, Yi Shi, Yi Zheng, Rong Zhang

Nanotechnology

DOI

2015

Asymmetric tunneling model of forward leakage current in GaN/InGaN light emitting diodes

Ting Zhi, Tao Tao, Bin Liu, Yi Li, Zhe Zhuang, Guogang Zhang, Zili Xie, Rong Zhang, Yi Zheng

AIP Advances

DOI

2015

Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface

Yi Li, Bin Liu, Rong Zhang, Zili Xie, Zhe Zhuang, Jiangping Dai, Tao Tao, Ting Zhi, Guogang Zhang, Peng Chen, Fangfang Ren, Hong Wei Zhao, Yi Zheng

Journal of Applied Physics

DOI

2015

Enhanced opto-electrical properties of graphene electrode InGaN/GaN LEDs with a NiOx inter-layer

Caichuan Wu, Fengyuan Liu, Bin Liu, Bin Liu, Zhe Zhuang, Jiangping Dai, Tao Tao, Guogang Zhang, Guogang Zhang, Zili Xie, Xinran Wang, Rong Zhang

Solid-State Electronics

DOI

2015

Bloch surface plasmon enhanced blue emission from InGaN/GaN light-emitting diode structures with Al-coated GaN nanorods

Guogang Zhang, Zhe Zhuang, Xu Guo, Fangfang Ren, Bin Liu, Haixiong Ge, Zili Xie, Ling Na Sun, Ting Zhi, Tao Tao, Yi Li, Yi Zheng, Rong Zhang

Nanotechnology

DOI

2015

High Color Rendering Index Hybrid III‐Nitride/Nanocrystals White Light‐Emitting Diodes

Zhe Zhuang, Xu Guo, Bin Liu, Fengrui Hu, Yi Zhen Li, Tao Tao, Jiangping Dai, Ting Zhi, Zili Xie, Peng Chen, Dunjun Chen, Haixiong Ge, Xiaoyong Wang, Min Xiao, Yi Shi, Yi Zheng, Rong Zhang

Advanced Functional Materials

DOI

2015

A New Strategy of Lithography Based on Phase Separation of Polymer Blends

Xu Guo, Long Liu, Zhe Zhuang, Xin Chen, Mengyang Ni, Yang Li, Yushuang Cui, Peng Zhan, Changsheng Yuan, Haixiong Ge, Zhenlin Wang, Yan‐Feng Chen

Scientific Reports

DOI

2014

Enhancement in solar hydrogen generation efficiency using InGaN photoelectrode after surface roughening treatment with nano-sized Ni mask

T. Tao, T. Zhi, Ming-Xue Li, Zi-Li Xie, Rong Zhang, Bin Liu, Yi Li, Zhe Zhuang, Guogang Zhang, Fu-Long Jiang, Peng Chen, You-Dou Zheng

DOI

2014

Spatially localised luminescence emission properties induced by formation of ring-shaped quasi-potential trap around V-pits in InGaN epi-layers

Tao Tao, Ting Zhi, Bin Liu, Yi Li, Zhe Zhuang, Zili Xie, Dunjun Chen, Peng Chen, Rong Zhang, Yi Zheng

physica status solidi (a)

DOI

2014

Effect of the band structure of InGaN/GaN quantum well on the surface plasmon enhanced light-emitting diodes

Yi Zhen Li, Rong Zhang, Bin Liu, Zili Xie, Guogang Zhang, Tao Tao, Zhe Zhuang, Ting Zhi, Yi Zheng

Journal of Applied Physics

DOI

2014

Fabrication of wafer-scale nanopatterned sapphire substrate by hybrid nanoimprint lithography

Xu Guo, Jing Hu, Zhe Zhuang, Mengmeng Deng, Feixiang Wu, Xie Li, Bin Liu, Changsheng Yuan, Haixiong Ge, Feng Li, Yanfeng Chen

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

DOI

2013

纳米压印技术在LED器件制备中的应用

庄喆，刘斌，张荣，李烨操，谢自力，陈鹏，赵红，修向前，郑有炓

《激光与光电子学进展》

2013

Investigation of surface plasmon coupling with the quantum well for reducing efficiency droop in GaN-based light emitting diodes

Yi Li, Rong Zhang, Zili Xie, Bin Liu, Peng Chen, Guogang Zhang, Tao Tao, Zhe Zhuang, Ling Zhi, Tiansheng Gan, Yi Zheng

Journal of Applied Physics

DOI

2013

Large-scale fabrication and luminescence properties of GaN nanostructures by a soft UV-curing nanoimprint lithography

Zhe Zhuang, Xu Guo, Guogang Zhang, Bin Liu, Rong Zhang, Ting Zhi, Tao Tao, Haixiong Ge, Fangfang Ren, Zili Xie, Yi Zheng

Nanotechnology

DOI

2013

Temperature dependence of the point defect properties of GaN thin films studied by terahertz time-domain spectroscopy

HeNan Fang, Rong Zhang, Bin Liu, YeCao Li, Deyi Fu, Yi Li, Zili Xie, Zhe Zhuang, Yi Zheng, Jingbo Wu, Biaobing Jin, Jian Chen, Peiheng Wu

Science China Physics Mechanics and Astronomy

DOI

2013

An efficient In0.30Ga0.70N photoelectrode by decreasing the surface recombination centres in a H2SO4 aqueous solution

Mingxue Li, Wenjun Luo, Qi Liu, Zhe Zhuang, Zhaosheng Li, Bin Liu, Dunjun Chen, Rong Zhang, Tao Yu, Zhigang Zou

Journal of Physics D Applied Physics

DOI

2013

Application of Nanoimprint Lithography for the Fabrication of Light-Emitting Diodes

Zhe Zhuang, Bin Liu, Rong Zhang, Ye Li, Zi-Li Xie, Peng Chen, Hong Zhao, Xiang-Qian Xiu, You-Dou Zheng

DOI

精选作品

期刊论文

Buried V-Pit Templates for 20.3% Peak EQE at 640 nm in InGaN Red LEDs

Low-threshold 571 nm plasmonic nanolaser from InGaN/GaN nanopillars

Dual-Mode Perovskite/GaN Tandem LEDs With Interlayer-Enabled Voltage-Dependent Color Tuning

Towards high-resolution and high-brightness uniformity near-eye display: heterogeneous integration of GaN-based micro-LED on a custom Si CMOS platform

AlN/GaN/InGaN interface engineering for high-efficiency InGaN-based red quantum wells grown on Si

P‐12.4: Distinguished Student Paper: Clipping‐Free DBS with Partition Fusion and Inter‐Frame Correlation for μ‐Fluidink Video Display

Universal Lateral Surface‐Grating Architecture for Violet‐to‐Green Single‐Mode Lasers

Purcell-enhanced lasing in single-crystal perovskite vertical cavity

Flexible active-matrix micro-LED display with 1T-1FeMFET architecture featuring scaling-limit-free design

Electrically pumped single-mode microlasers with omnidirectional radiation for optical broadcasting communication

Application-specific micro-LED design based on transfer learning

Micro-LED新型显示技术的现状、挑战及展望

Flexible 1T-1FeMTFT Active-matrix Micro-LED Display Utilizing ITO FeMTFT with Record Memory Window of 0.63 V/nm and Low Power Consumption

Impact of Template Patterning Dimensions on the Performance of InGaN-Based Red Light-Emitting Diodes

Investigation on fabrication and physical mechanisms of single-contact AC-driven nano-LED devices

Semi-polar (20-21) GaN microwire LED fabricated by laser lift-off and mechanical bending

Demonstration of 633-nm InGaN-based red light-emitting diodes on a semipolar (11–22) GaN template

Nondestructive Single-Contact Electroluminescence Inspection of LED With High Accuracy

Two-dimensional buffer breaks substrate limit in III-nitrides epitaxy

Easy-peeling growth of triangular hBN flakes and their demonstration in vacuum ultraviolet photodetectors

Dual-mode operation of GaN-based p-i-n diodes for electroluminescent emission and self-powered photodetection.

Micro-LED for short distance Optical Links with Low Power consumption

极性、半极性和非极性InN薄膜的MOCVD外延生长与表征

Investigation of InGaN-based flexible RGB micro-light-emitting diodes and their monolithic integration

Flexible Active-Matrix Micro-LED Display Utilizing InSnO TFTs with High Mobility of 39.1 cm2V-1s-1 and Mass-Production Compatible Process

Self-powered MXene/GaN van der Waals Schottky ultraviolet photodetectors with exceptional responsivity and stability

Enhanced Performance of GaN-Based Single Contact Micro-LED Driven by AC Power Utilizing the Tunnel Junction

Analysis of the mechanisms by which sputtered AlN nucleation layers enhance the performance of red InGaN-based LEDs

Ultra-Small Size Micro-LEDs With Enhanced Efficiency for Near-Eye Display

High-Performance Solar-Blind Photodetector Based on (010)-Plane β-Ga2O3 Thermally Oxidized from Nonpolar (110)-Plane GaN

High-temperature performance of InGaN-based amber micro-light-emitting diodes using an epitaxial tunnel junction contact

Monolithic Integration of GaN-Based Transistors and Micro-LED

Rapid modulation bandwidth test system of micro-LED based on photon excitation

Investigation of Ohmic contact to plasma-etched n-Al0.5Ga0.5N by surface treatment

P‐11.2: Study on the Optical Compensation Improvement Effect of Micro LEDs at Various Brightness Levels

Effects of Mg-doping temperature on the structural and electrical properties of nonpolar a-plane p-type GaN films

Optimizing Al Composition in Barriers for InGaN Amber Micro-LEDs With High Wall-Plug Efficiency

Achieving InGaN-Based Red Light-Emitting Diodes by Increasing the Growth Pressure of Quantum Wells

Wafer-scale emission uniformity of InGaN-based red light-emitting diodes on an in situ InGaN decomposition template

Effects of Buffer Layer on Structural Properties of Nonpolar (112¯0)-Plane GaN Film

Optimized InGaN/GaN Quantum Structure for High-Efficiency Micro-LEDs Displays With Low Current Injection

Monolithic Integration of GaN-Based Green Micro-LED and Quasi-Vertical MOSFET Utilizing a Hybrid Tunnel Junction

Dominant Mechanism of GaN-Based Single Contact Micro-LED Driven by AC Power

Wafer-Scale Monolithic Integration of Blue Micro-Light-Emitting Diodes and Green/Red Quantum Dots for Full-Color Displays

Rapid growth of a 24 mm 2 scale hexagonal boron nitride crystal in Ni–Cr solution

Investigation of highly reflective p-electrodes for AlGaN-based deep-ultraviolet light-emitting diodes.

Gallium Nitride Blue/Green Micro-LEDs for High Brightness and Transparency Display

Cascade GaN-based micro-photodiodes for photonic integration

Enhanced Resonant Energy Transfer by Decorating Au Nanoparticles on the Sidewalls of InGaN Multiple‐Quantum‐Well Nanorods

Demonstration of 606nm-wavelength InGaN-based amber micro-LEDs toward red emission

Analysis of the n-GaN electrochemical etching process and its mechanism in oxalic acid

InGaN-based green micro-LED efficiency enhancement by hydrogen passivation of the p-GaN sidewall

MOVPE-grown InGaN quantum-well red micro-LEDs

Passivation of Surface States in GaN by NiO Particles

Reduction of hexagonal defects in N-polar AlGaN epitaxial layers grown with reformed pulsed-flow technology

The performance of InGaN-based red/green micro-LEDs

Demonstration of 621-nm-wavelength InGaN-based single-quantum-well LEDs with an external quantum efficiency of 4.3% at 10.1 A/cm2

InGaN-based RGB micro-LED arrays

High-brightness InGaN-based red microLEDs exceeding 1 mW/mm2

Study of electrical and structural properties of non-polar a-plane p-AlGaN epi-layers with various Al compositions

InGaN-based red light-emitting diodes: from traditional to micro-LEDs

Optical properties of quasi-ordered 112̅2 AlGaN multi-quantum-well nanorod arrays

606-nm InGaN Amber Micro-Light-Emitting Diodes With an On-Wafer External Quantum Efficiency of 0.56%

Epitaxial growth of semi-polar (11–22) plane AlInGaN quaternary alloys on m-plane (10-10) sapphire substrates

The efficiency enhancement of InGaN-based red LEDs with thick GaN underlying layers

Influence of plasmonic resonant wavelength on energy transfer from an InGaN quantum well to quantum dots

Improved performance of InGaN-based red light-emitting diodes by micro-hole arrays.

630-nm red InGaN micro-light-emitting diodes (<20 μm × 20 μm) exceeding 1 mW/mm2 for full-color micro-displays

Ultra-small and ultra-dense InGaN-based RGB monochromatic micro-light-emitting diode arrays by pixelation of conductive p-GaN

665-nm-wavelength InGaN-based red LEDs with low forward voltage operation

Impact of composite last quantum barrier on the performance of AlGaN-based deep ultraviolet light-emitting diode

Investigation of InGaN-based red/green micro-light-emitting diodes.

Achievement of polarity reversion from Al(Ga)-polar to N-polar for AlGaN film on AlN seeding layer grown by a novel flow‐modulation technology

Investigation of a Separated Short-Wavelength Peak in InGaN Red Light-Emitting Diodes

Ultra-small InGaN green micro-light-emitting diodes fabricated by selective passivation of p-GaN.

Red Ingan-Leds Using Strain-Compensated Quantum Well Structures

High quality non-polar a-plane AlN template grown on semi-polar r-plane sapphire substrate by three-step pulsed flow growth method

Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes.