陈荣梅｜北京大学｜学者主页

2026

Architecture, Design and Technology Co-optimization for 3D ICs with Advanced BSPDN Considering Power & Thermal Integrity Impact

Hu Zhou, Haolan Yang, Xin Liu, Linqiu Wang, Feifan Xie, YuMeng Wang, Z H Chen, Zhiyong Zhang, Lianmao Peng, Rongmei Chen

DOI

2026

ETLA-3D: Equivalent Thin Layer Aggregation based Thermal FEM for Hybrid Bonding F2F 3D ICs

Chenghan Wang, Zhen Zhuang, Kai Zhu, Darong Huang, Luis Costero, Rongmei Chen, D. Atienza, Tsung-Yi Ho

DOI

2026

Evaluation of Thermal and Power integrity and its Impact on Performance for 3D Memory-on-Logic CPUs with FSPDN and BSPDN

Yumeng Wang, Xin Liu, Hu Zhou, Linqiu Wang, Haolan Yang, Z H Chen, Zhiyong Zhang, Lianmao Peng, Rongmei Chen

DOI

2026

Computationally Driven Advances in Cu‐ CNT On‐Chip Interconnect Materials: From First Principles to Machine Learning

Changhong Zhang, Jie Liang, Yi Li, Z. Wang, Haoyuan Li, Zhen Yuan, Jiuren Zhou, Rongmei Chen, Wensheng Zhao, Lei Zhang, Hanshen Xin, Jianhua Zhang

Energy & environment materials

DOI

2026

CUTh-Solver: GPU-Accelerated Sparse Matrix Solver for High-Resolution Thermal Simulation of 3D ICs

Chenghan Wang, Zhen Zhuang, Shui Jiang, Siyuan Liang, Xiaoman Yang, Kai Zhu, Darong Huang, Luis Costero, Rongmei Chen, Tsung-Wei Huang, David Atienza, Tsung-Yi Ho

arXiv.org

DOI

2025

A 0.5-ppm/°C Voltage Reference With Sub-Ranging On-Chip Self-Heating and Second-Order Compensation in 65-nm CMOS

Wenzhao Lv, Yu Feng Sun, Jin Tao Xu, D.H Ye, Rongmei Chen, Lei Liao, Zhuojun Chen

IEEE Journal of Solid-State Circuits

DOI

2025

High-Performance IGZO-based DrMOS with Vertical Channel Power Transistor for Monolithic 3D Integrated Active PDNs with On-Chip Voltage Conversion

Yijia Fan, Jianshi Tang, Yanbo Su, Hu Zhou, Rongmei Chen, Xiaosen Liu, Hongsen Zhang, Kexin Wang, Zhidong Tang, Yibei Zhang, Jiaming Li, Jianing Li, Linqiu Wang, Yiwei Du, Peng Yao, Bin Gao, He Qian, Zhigang Wu

Technical digest - International Electron Devices Meeting/Technical digest

DOI

2025

Thermal Impacts of Backside Power Delivery Networks on GAAFET Technology

Sihao Chen, Yu Li, Baokang Peng, Rongmei Chen, Runsheng Wang, Lining Zhang

IEEE Transactions on Electron Devices

DOI

2025

Performance Evaluation of 55Nm SRAM Cell With Buried Power Rail and Backside Power Delivery Network

Xiaonan Wu, Yitao Ma, Rongmei Chen, Yun-Long Li

International Symposium on VLSI Technology, Systems, and Applications

DOI

2024

Power and Thermal Integrity Analysis of High Performance and Low Power CPUs at Sub-2nm Node Designed with Various Advanced Backside PDNs

Linqiu Wang, Feifan Xie, Jizhe Liu, Tianchi Liu, Lian‐Mao Peng, Zhiyong Zhang, Tiwei Wei, Rongmei Chen

Technical digest - International Electron Devices Meeting/Technical digest

DOI

2024

Thermal Mitigation Strategy for Backside Power Delivery Network

Feifan Xie, Rongmei Chen, Tiwei Wei

2022 IEEE 72nd Electronic Components and Technology Conference (ECTC)

DOI

2024

A Modeling Study of Stacked Cu-CNT TSV on Electrical, Thermal, and Reliability Analysis

Baohui Xu, Rongmei Chen, Jiu-Ren Zhou, Jie Liang

IEEE Transactions on Electron Devices

DOI

2023

A Modeling Study: Applying Carbon-Based Interconnects to BS-PDN Architecture

Baohui Xu, Rongmei Chen, Jie Liang

International Conference on ASIC

DOI

2023

Block-level Evaluation and Optimization of Backside PDN for High-Performance Computing at the A14 node

G. Sisto, R. Preston, Rongmei Chen, G. Mirabelli, A. Farokhnejad, Yun Zhou, I. Ciofi, A. Jourdain, A. Veloso, M. Stucchi, O. Zografos, P. Weckx, G. Hellings, J. Ryckaert

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

DOI

2023

A Modeling Study on Electrical and Thermal Behavior of CNT TSV for Multilayer Structure

Baohui Xu, Rongmei Chen, Jiu-Ren Zhou, Jie Liang

IEEE Transactions on Electron Devices

DOI

2023

Pushing carbon nanotube circuits below the 10-nm node

Rongmei Chen

Nature Electronics

DOI

2023

The Promise of 2-D Materials for Scaled Digital and Analog Applications

D. Verreck, P. Wambacq, M. L. Van de Put, Z. Ahmed, Q. Smets, A. Afzalian, R. Duflou, Xiang-Yu Wu, G. Mirabelli, Rongmei Chen, I. Asselberghs, G. Kar

IEEE International Solid-State Circuits Conference

DOI

2023

Design Enablement of 3-Dies Stacked 3D-ICs Using Fine-Pitch Hybrid-Bonding and TSVs

Mohamed Naeim, Hanqi Yang, Pinhong Chen, Rong Bao, Antoine Dekeyser, G. Sisto, M. Brunion, Rongmei Chen, G. van der Plas, E. Beyne, D. Milojevic

IEEE International Conference on 3D System Integration

DOI

2023

System-level evaluation of 3D power delivery network at 2nm node

G. Sisto, Rongmei Chen, D. Milojevic, O. Zografos, P. Weckx, G. Hellings, J. Ryckaert

Advanced Lithography

DOI

2022

Backside PDN and 2.5D MIMCAP to Double Boost 2D and 3D ICs IR-Drop beyond 2nm Node

Rongmei Chen, G. Sisto, M. Stucchi, A. Jourdain, K. Miyaguchi, P. Schuddinck, P. Woeltgens, H. Lin, N. Kakarla, A. Veloso, D. Milojevic, O. Zografos, P. Weckx, G. Hellings, G. van der Plas, J. Ryckaert, E. Beyne

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

DOI

2022

Carbon Nanotube SRAM in 5-nm Technology Node Design, Optimization, and Performance Evaluation—Part II: CNT Interconnect Optimization

Rongmei Chen, Lin-Fwu Chen, Jie Liang, Yuan-Qing Cheng, S. Elloumi, Jaehyun Lee, Kangwei Xu, V. Georgiev, Kai Ni, P. Debacker, A. Asenov, A. Todri-Sanial

IEEE Transactions on Very Large Scale Integration (vlsi) Systems

DOI

2022

Opportunities of Chip Power Integrity and Performance Improvement through Wafer Backside (BS) Connection: Invited Paper

Rongmei Chen, G. Sisto, O. Zografos, D. Milojevic, P. Weckx, G. van der Plas, E. Beyne

International Workshop on System-Level Interconnect Prediction

DOI

2022

Extended Methodology to Determine SRAM Write Margin in Resistance-Dominated Technology Node

Hsiao-Hsuan Liu, S. Salahuddin, D. Abdi, Rongmei Chen, P. Weckx, P. Matagne, F. Catthoor

IEEE Transactions on Electron Devices

DOI

2022

Carbon Nanotube SRAM in 5-nm Technology Node Design, Optimization, and Performance Evaluation—Part I: CNFET Transistor Optimization

Rongmei Chen, Lin-Fwu Chen, Jie Liang, Yuan-Qing Cheng, S. Elloumi, Jaehyun Lee, Kangwei Xu, V. Georgiev, Kai Ni, P. Debacker, A. Asenov, A. Todri-Sanial

IEEE Transactions on Very Large Scale Integration (vlsi) Systems

DOI

2022

Pulse Quenching Effect Characterized by Inverter Chains under Heavy-ion Irradiation in 28-nm CMOS Technology

Chiyu Tan, Yan Li, Shaohang Chu, Rongmei Chen, Xu Cheng, Jun Han, Xiao-Yang Zeng

European Conference on Radiation and Its Effects on Components and Systems

DOI

2022

Innovations in Transistor Architecture and Device Connectivity for Advanced Logic Scaling

A. Veloso, G. Eneman, A. De Keersgieter, P. Favia, A. Hikavyy, Rongmei Chen, A. Jourdain, N. Horiguchi

International Conference on IC Design & Technology

DOI

2022

Recent Progress and Challenges Regarding Carbon Nanotube On-Chip Interconnects

Baohui Xu, Rongmei Chen, Jiu-Ren Zhou, Jie Liang

Micromachines

DOI

2022

Heavy-ion and pulsed laser induced single-event double transients in nanometer inverter chain

Wen Zhao, Wei Chen, Chao-Hui He, Rongmei Chen, Fengqi Zhang, Xiaoqiang Guo, Chao Lu, Chen Shen

Radiation effects and defects in solids (Print)

DOI

2021

Design And Sign-off Methodologies For Wafer-To-Wafer Bonded 3D-ICs At Advanced Nodes (invited)

G. Sisto, Rongmei Chen, R. Chou, G. van der Plas, E. Beyne, R. Metcalfe, D. Milojevic

International Workshop on System-Level Interconnect Prediction

DOI

2020

纳米体硅CMOS工艺逻辑电路单粒子效应研究

陈荣梅

2020

Mitigating single-event multiple transients in a combinational circuit based on standard cells

Wen Zhao, Wei Chen, Chaohui He, Rongmei Chen, P. Cong, Fengqi Zhang, Chao Lu, Chen Shen, Lisang Zheng, Xiaoqiang Guo, L. Ding

Microelectronics and reliability

DOI

2020

Prediction of single event upset critical charge and sensitive volume depth by energy deposition analysis of low energy protons

Wen Zhao, Wei Chen, Chaohui He, Rongmei Chen, Liang Wang, Zujun Wang, P. Cong, Xiaoqiang Guo, Chen Shen

DOI

2020

Analysis of multiple cell upset characteristics for logical circuits in radiation environment

L. Ding, Tan Wang, Fengqi Zhang, Xiaoyu Pan, Wei Chen, Rongmei Chen, Guo-Qing Yang

DOI

2019

Investigation of Pt-Salt-Doped-Standalone- Multiwall Carbon Nanotubes for On-Chip Interconnect Applications

Jie Liang, Rongmei Chen, R. Ramos, Jaehyun Lee, H. Okuno, D. Kalita, V. Georgiev, S. Berrada, T. Sadi, B. Uhlig, K. Lilienthal, A. Dhavamani, F. Könemann, B. Gotsmann, Gonçalves Gonçalves, Bin-Gan Chen, A. Asenov, J. Dijon, A. Todri-Sanial

IEEE Transactions on Electron Devices

DOI

2019

Single-Event Double Transients in Inverter Chains Designed With Different Transistor Widths

Wen Zhao, Chaohui He, Wei Chen, Rongmei Chen, P. Cong, Fengqi Zhang, Zujun Wang, Xiaoqiang Guo, L. Ding

IEEE Transactions on Nuclear Science

DOI

2019

Design Enablement of Fine Pitch Face-to-Face 3D System Integration using Die-by-Die Place & Route

G. Sisto, P. Debacker, Rongmei Chen, G. van der Plas, R. Chou, E. Beyne, D. Milojevic

IEEE International Conference on 3D System Integration

DOI

2019

Modeling the Dependence of Single-Event Transients on Strike Location for Circuit-Level Simulation

L. Ding, Wei Chen, Tan Wang, Rongmei Chen, Yinhong Luo, Fengqi Zhang, Xiaoyu Pan, Hua-Bo Sun, Lei Chen

IEEE Transactions on Nuclear Science

DOI

2018

STATISTICAL VALUES OF DEFECTIVE RESISTANCE FOR SWCNT

Jaehyun Lee, S. Berrada, V. Georgiev, R. Pandey, Rongmei Chen, A. Asenov, Aida Todri-Sanial

2018

Analysis of Temporal Masking Effects on Master- and Slave-Type Flip-Flop SEUs and Related Applications

Rongmei Chen, N. Mahatme, Z. Diggins, Liang Wang, En-Xia Zhang, Y.-P. Chen, Yi-Nong Liu, B. Narasimham, A. Witulski, B. Bhuva, D. Fleetwood

IEEE Transactions on Nuclear Science

DOI

2018

Circuit-level Prediction of Charge Sharing Transients and Upsets for Various Well Contacts

L. Ding, Wei Chen, Tan Wang, Yinhong Luo, Fengqi Zhang, Rongmei Chen, Xiaoyu Pan, Hua-Bo Sun, Lei Chen

European Conference on Radiation and Its Effects on Components and Systems

DOI

2018

Variability Study of MWCNT Local Interconnects Considering Defects and Contact Resistances—Part I: Pristine MWCNT

Rongmei Chen, Jie Liang, Jaehyun Lee, V. Georgiev, R. Ramos, H. Okuno, D. Kalita, Yuan-Qing Cheng, Liuyang Zhang, R. Pandey, S. Amoroso, C. Millar, A. Asenov, J. Dijon, A. Todri-Sanial

IEEE Transactions on Electron Devices

DOI

2018

Research progress of radiation effects mechanisms and experimental techniques in nano-devices

Wei Chen, Jie Liu, Xiao-Hua Ma, Gang Guo, Yuanfu Zhao, Xiaoqiang Guo, Yinhong Luo, Zhibin Yao, L. Ding, Chen-Hui Wang, Rongmei Chen, Baoping He, Wen Zhao, Fengqi Zhang, Wu-Ying Ma, Peng-Fei Zhai, Zujun Wang, Tian-Qi Liu, Hong-Xia Guo, Jian-De Liu, Hai-Liang Yang, Pei-Pei Hu, P. Cong, Zong-Zhen Li

DOI

2018

Multi-walled/Single-walled Carbon Nanotube (MWCNT/SWCNT) Interconnect Lumped Compact Model Considering Defects, Contact resistance and Doping impact

Rongmei Chen, Jie Liang, Jaehyun Lee, V. Georgiev, A. Todri

DOI

2018

Study of Total-Ionizing-Dose Effects on a Single-Event-Hardened Phase-Locked Loop

Zhuo-Jun Chen, D. Ding, Ye-Min Dong, S. Yi, Shu-Xing Zhou, Yuanyuan Hu, Yunlong Zheng, C. Peng, Rongmei Chen

IEEE Transactions on Nuclear Science

DOI

2018

Progress on carbon nanotube BEOL interconnects

B. Uhlig, Jie Liang, Jaehyun Lee, R. Ramos, A. Dhavamani, N. Nagy, Jean Dijon, H. Okuno, D. Kalita, V. Georgiev, A. Asenov, S. Amoroso, Liping Wang, C. Millar, F. Könemann, B. Gotsmann, G. Goncalves, Bin-Gan Chen, R. Pandey, Rongmei Chen, A. Todri-Sanial

Design, Automation and Test in Europe

DOI

2018

Variability Study of MWCNT Local Interconnects Considering Defects and Contact Resistances—Part II: Impact of Charge Transfer Doping

Rongmei Chen, Jie Liang, Jaehyun Lee, V. Georgiev, R. Ramos, H. Okuno, D. Kalita, Yuan-Qing Cheng, Liuyang Zhang, R. Pandey, S. Amoroso, C. Millar, A. Asenov, J. Dijon, A. Todri-Sanial

IEEE Transactions on Electron Devices

DOI

2018

Challenges and Progress on Carbon Nanotube Integration for BEOL Interconnects

B. Uhlig, A. Dhavamani, N. Nagy, Katharina Lilienthal, R. Liske, R. Ramos, J. Dijon, H. Okuno, D. Kalita, Jaehyun Lee, V. Georgiev, A. Asenov, S. Amoroso, Liping Wang, F. Koenemann, B. Gotsmann, G. Goncalves, Bin-Gan Chen, Jie Liang, R. Pandey, Rongmei Chen, A. Todri-Sanial

International Interconnect Technology Conference

DOI

2018

Atomistic- to Circuit-Level Modeling of Doped SWCNT for On-Chip Interconnects

Jie Liang, Jaehyun Lee, S. Berrada, V. Georgiev, R. Pandey, Rongmei Chen, A. Asenov, A. Todri-Sanial

IEEE transactions on nanotechnology

DOI

2018

Single-event multiple transients in guard-ring hardened inverter chains of different layout designs

Wen Zhao, Chaohui He, Wei Chen, Rongmei Chen, P. Cong, Fengqi Zhang, Zujun Wang, Chen Shen, Lisang Zheng, Xiaoqiang Guo, L. Ding

Microelectronics and reliability

DOI

2017

Effects of Total-Ionizing-Dose Irradiation on SEU- and SET-Induced Soft Errors in Bulk 40-nm Sequential Circuits

Rongmei Chen, Z. Diggins, N. Mahatme, Liang Wang, En-Xia Zhang, Y.-P. Chen, Yi-Nong Liu, B. Narasimham, A. Witulski, B. Bhuva, D. Fleetwood

IEEE Transactions on Nuclear Science

DOI

2017

Modeling the impact of well contacts on SEE response with bias-dependent Single-Event compact model

L. Ding, Wei Chen, Hong-Xia Guo, Tan Wang, Rongmei Chen, Yinhong Luo, Fengqi Zhang, Xiaoyu Pan

Microelectronics and reliability

DOI

2017

Effects of Temperature and Supply Voltage on SEU- and SET-Induced Errors in Bulk 40-nm Sequential Circuits

Rongmei Chen, Z. Diggins, N. Mahatme, Liang Wang, En-Xia Zhang, Y.-P. Chen, Hang-Fang Zhang, Yi-Nong Liu, B. Narasimham, A. Witulski, B. Bhuva, D. Fleetwood

IEEE Transactions on Nuclear Science

DOI

2017

Impact of Temporal Masking of Flip-Flop Upsets on Soft Error Rates of Sequential Circuits

Rongmei Chen, N. Mahatme, Zachary Diggins, Liang Wang, En-Xia Zhang, Yan-Ran P. Chen, Yi Liu, B. Narasimham, A. Witulski, B. Bhuva, D. Fleetwood

IEEE Transactions on Nuclear Science

DOI

2017

Single Event Effect Characteristics Analysis of Typical Circuit Elements in Spacecraft Power Systems

Wen Zhao, Chaohui He, Wei Chen, Xiaoqiang Guo, P. Cong, Fengqi Zhang, Rongmei Chen

DOI

2017

Improved on-chip self-triggered single-event transient measurement circuit design and applications

Rongmei Chen, Wei Chen, Xiaoqiang Guo, Chen Shen, Fengqi Zhang, Lisang Zheng, Wen Zhao, L. Ding, Yinhong Luo, Hong-Xia Guo, Yuanming Wang, Yi-Nong Liu

Microelectronics and reliability

DOI

2017

Single-Event Multiple Transients in Conventional and Guard-Ring Hardened Inverter Chains Under Pulsed Laser and Heavy-Ion Irradiation

Rongmei Chen, Fengqi Zhang, Wei Chen, L. Ding, Xiaoqiang Guo, Chen Shen, Yinhong Luo, Wen Zhao, Lisang Zheng, Hong-Xia Guo, Yi-Nong Liu, D. Fleetwood

IEEE Transactions on Nuclear Science

DOI

2016

Single-event performance of differential flip-flop designs and hardening implication

Rongmei Chen, En-Xia Zhang, B. Bhuva

IEEE International Symposium on On-Line Testing and Robust System Design

DOI

2016

Effects of temperature and supply voltage on SEU- and SET-induced single-event errors in bulk 40-nm sequential circuits

Rongmei Chen, Z. Diggins, N. Mahatme, Liang Wang, En-Xia Zhang, Y.-P. Chen, Y.-N. Liu, B. Narasimham, A. Witulski, B. Bhuva, D. Fleetwood

European Conference on Radiation and Its Effects on Components and Systems

DOI

2016

Total ionizing dose sensitivity of a radiation-tolerant phase-locked loop in a 130 nm SOI technology

Zhuo-Jun Chen, Min Lin, D. Ding, Yunlong Zheng, Zehua Sang, S. Zou, Rongmei Chen

European Conference on Radiation and Its Effects on Components and Systems

DOI

2016

Analysis of temporal masking effect on single-event upset rates for sequential circuits

Rongmei Chen, Z. Diggins, N. Mahatme, Liang Wang, En-Xia Zhang, Y.-P. Chen, Y.-N. Liu, B. Narasimham, A. Witulski, B. Bhuva

European Conference on Radiation and Its Effects on Components and Systems

DOI

2015

Flash型FPGA的单粒子效应测试系统研制

王忠明，闫逸华，陈荣梅，王园明，赵雯，张凤祁，郭晓强，郭红霞

《原子能科学技术》

精选作品

期刊论文

Architecture, Design and Technology Co-optimization for 3D ICs with Advanced BSPDN Considering Power & Thermal Integrity Impact

ETLA-3D: Equivalent Thin Layer Aggregation based Thermal FEM for Hybrid Bonding F2F 3D ICs

Evaluation of Thermal and Power integrity and its Impact on Performance for 3D Memory-on-Logic CPUs with FSPDN and BSPDN

Computationally Driven Advances in Cu‐ CNT On‐Chip Interconnect Materials: From First Principles to Machine Learning

CUTh-Solver: GPU-Accelerated Sparse Matrix Solver for High-Resolution Thermal Simulation of 3D ICs

A 0.5-ppm/°C Voltage Reference With Sub-Ranging On-Chip Self-Heating and Second-Order Compensation in 65-nm CMOS

High-Performance IGZO-based DrMOS with Vertical Channel Power Transistor for Monolithic 3D Integrated Active PDNs with On-Chip Voltage Conversion

Thermal Impacts of Backside Power Delivery Networks on GAAFET Technology

Performance Evaluation of 55Nm SRAM Cell With Buried Power Rail and Backside Power Delivery Network

Power and Thermal Integrity Analysis of High Performance and Low Power CPUs at Sub-2nm Node Designed with Various Advanced Backside PDNs

Thermal Mitigation Strategy for Backside Power Delivery Network

A Modeling Study of Stacked Cu-CNT TSV on Electrical, Thermal, and Reliability Analysis

A Modeling Study: Applying Carbon-Based Interconnects to BS-PDN Architecture

Block-level Evaluation and Optimization of Backside PDN for High-Performance Computing at the A14 node

A Modeling Study on Electrical and Thermal Behavior of CNT TSV for Multilayer Structure

Pushing carbon nanotube circuits below the 10-nm node

The Promise of 2-D Materials for Scaled Digital and Analog Applications

Design Enablement of 3-Dies Stacked 3D-ICs Using Fine-Pitch Hybrid-Bonding and TSVs

System-level evaluation of 3D power delivery network at 2nm node

Backside PDN and 2.5D MIMCAP to Double Boost 2D and 3D ICs IR-Drop beyond 2nm Node

Carbon Nanotube SRAM in 5-nm Technology Node Design, Optimization, and Performance Evaluation—Part II: CNT Interconnect Optimization

Opportunities of Chip Power Integrity and Performance Improvement through Wafer Backside (BS) Connection: Invited Paper

Extended Methodology to Determine SRAM Write Margin in Resistance-Dominated Technology Node

Carbon Nanotube SRAM in 5-nm Technology Node Design, Optimization, and Performance Evaluation—Part I: CNFET Transistor Optimization

Pulse Quenching Effect Characterized by Inverter Chains under Heavy-ion Irradiation in 28-nm CMOS Technology

Innovations in Transistor Architecture and Device Connectivity for Advanced Logic Scaling

Recent Progress and Challenges Regarding Carbon Nanotube On-Chip Interconnects

Heavy-ion and pulsed laser induced single-event double transients in nanometer inverter chain

Design And Sign-off Methodologies For Wafer-To-Wafer Bonded 3D-ICs At Advanced Nodes (invited)

纳米体硅CMOS工艺逻辑电路单粒子效应研究

Mitigating single-event multiple transients in a combinational circuit based on standard cells

Prediction of single event upset critical charge and sensitive volume depth by energy deposition analysis of low energy protons

Analysis of multiple cell upset characteristics for logical circuits in radiation environment

Investigation of Pt-Salt-Doped-Standalone- Multiwall Carbon Nanotubes for On-Chip Interconnect Applications

Single-Event Double Transients in Inverter Chains Designed With Different Transistor Widths

Design Enablement of Fine Pitch Face-to-Face 3D System Integration using Die-by-Die Place & Route

Modeling the Dependence of Single-Event Transients on Strike Location for Circuit-Level Simulation

STATISTICAL VALUES OF DEFECTIVE RESISTANCE FOR SWCNT

Analysis of Temporal Masking Effects on Master- and Slave-Type Flip-Flop SEUs and Related Applications

Circuit-level Prediction of Charge Sharing Transients and Upsets for Various Well Contacts

Variability Study of MWCNT Local Interconnects Considering Defects and Contact Resistances—Part I: Pristine MWCNT

Research progress of radiation effects mechanisms and experimental techniques in nano-devices

Multi-walled/Single-walled Carbon Nanotube (MWCNT/SWCNT) Interconnect Lumped Compact Model Considering Defects, Contact resistance and Doping impact

Study of Total-Ionizing-Dose Effects on a Single-Event-Hardened Phase-Locked Loop

Progress on carbon nanotube BEOL interconnects

Variability Study of MWCNT Local Interconnects Considering Defects and Contact Resistances—Part II: Impact of Charge Transfer Doping

Challenges and Progress on Carbon Nanotube Integration for BEOL Interconnects

Atomistic- to Circuit-Level Modeling of Doped SWCNT for On-Chip Interconnects

Single-event multiple transients in guard-ring hardened inverter chains of different layout designs

Effects of Total-Ionizing-Dose Irradiation on SEU- and SET-Induced Soft Errors in Bulk 40-nm Sequential Circuits

Modeling the impact of well contacts on SEE response with bias-dependent Single-Event compact model

Effects of Temperature and Supply Voltage on SEU- and SET-Induced Errors in Bulk 40-nm Sequential Circuits

Impact of Temporal Masking of Flip-Flop Upsets on Soft Error Rates of Sequential Circuits

Single Event Effect Characteristics Analysis of Typical Circuit Elements in Spacecraft Power Systems

Improved on-chip self-triggered single-event transient measurement circuit design and applications

Single-Event Multiple Transients in Conventional and Guard-Ring Hardened Inverter Chains Under Pulsed Laser and Heavy-Ion Irradiation

Single-event performance of differential flip-flop designs and hardening implication

Effects of temperature and supply voltage on SEU- and SET-induced single-event errors in bulk 40-nm sequential circuits

Total ionizing dose sensitivity of a radiation-tolerant phase-locked loop in a 130 nm SOI technology

Analysis of temporal masking effect on single-event upset rates for sequential circuits

Flash型FPGA的单粒子效应测试系统研制

预印本

CSCO: A Backside-PDN-Aware Clock-Signal Co-Optimization Framework for Improved PPA

研究方向