卢太平｜鲁东大学｜学者主页

2026

High performance self-powered deep ultraviolet photodetector based on type-II CuBr/β-Ga2O3 p-n heterostructure for UV imaging

Yu Fang, Lichun Zhang, Qing Guo, Doudou Liang, Ning Cao, Xiao Zhang, Dengying Zhang, Fengzhou Zhao, taiping lu

Journal of Alloys and Compounds

2026

Impact of Al content in the n-AlGaN hole current confinement layer on the performance of GaN-based VCSELs.

Xiantian Shi, Shun Gu, Ya-Dan Zhu, Yifan Zhang, Zhigang Jia, Doudou Liang, Xiansheng Tang, Zhen Deng, Honggang Wang, Feng-Zhou Zhao, Li-Chun Zhang, Taiping Lu

Optics Express

DOI

2026

Advantages of AlGaN-Based 275-nm Deep-Ultraviolet LEDs with a Tapered N-shaped Aluminum-Composition Graded Electron Blocking Layer

Biao Shen, Taiping Lu, Yifan Zhang, Xiantian Shi, Zhigang Jia, Xiansheng Tang, Zhen Deng, Zhongqiang Wang, Ya-Dan Zhu, Lichun Zhang

Micro and Nanostructures

DOI

2026

Performance improvement of green VCSELs with GaN/low-indium-content InGaN hybrid last quantum barrier

Yuanchao Li, Taiping Lu, Shun Gu, Xiantian Shi, Zhigang Jia, Xiansheng Tang, Zhen Deng, Deng-Ying Zhang, Ya-Dan Zhu, Li-Chun Zhang

Semiconductor Science and Technology

DOI

2026

Full-band UV Photodetection with high performance via CuGa2O4 film grown on p-GaN

Xianling Meng, Lichun Zhang, Doudou Liang, Xiao Zhang, Daoping Peng, Guodong Zhao, Zhongqiang Wang, Taiping Lu, Feng-Zhou Zhao

Materials letters (General ed.)

DOI

2026

Photo-generated carriers behavior under varying temperature conditions

Li-Yuan Jiang, Xiansheng Tang, Teng Miao, Xiang-Li Qin, Chun-Hua Du, Hai-Qiang Jia, Taiping Lu, Zhao-Wei Wang

Physica B: Condensed Matter

DOI

2026

CMOS-compatible Eu2+-doped CsCu2I3 films with improved quantum yield for white-light emission and information encryption

Da-chun Peng, Li-Chun Zhang, Xiao-Xuan Li, Xiao Zhang, Yujun Fang, Chenxi Han, Zi-Yan Wan, Xiaohua Cheng, Guanying Xie, Zhongqiang Wang, Congcong Liu, Mengmeng Jiao, Taiping Lu, Feng-Zhou Zhao

Chemical Engineering Journal

DOI

2026

Interface-engineered p-CsCu 2 I 3 /n-Ga 2 O 3 nanowire heterojunctions for self-powered ultravio

Ruhan Luan, Feng-Zhou Zhao, Xianling Meng, Tao Chen, Daoping Peng, Xiao Zhang, Jixing Lin, Deng-Ying Zhang, Taiping Lu, Li-Chun Zhang

Journal of Materials Chemistry C

DOI

2026

Enhanced self-powered ultraviolet photodetector based on textured p-CsCu2I3/n-ZnO heterojunction grown on polystyrene microsphere substrate

Ruhan Luan, Feng-Zhou Zhao, Xianling Meng, Ji-Xing Lin, Tao Chen, Da-chun Peng, Ya-Dan Zhu, Taiping Lu, Li-Chun Zhang

Materials letters (General ed.)

DOI

2025

Performance enhancement of GaN-based VCSELs with an n-AlGaN hole current confinement layer.

Xiantian Shi, Taiping Lu, Wenxiao Wang, Yuanchao Li, Jing Han, Zhigang Jia, Xiansheng Tang, Doudou Liang, Qingyi Guo, Feng-Zhou Zhao, Ya-Dan Zhu, Li-Chun Zhang

Optics Letters

DOI

2024

Self-powered deep ultraviolet photodetector based on p-CuI/n-ZnGa 2 O 4 heterojunction with high sensitivity and fast speed

Ning Cao, Lichun Zhang, Xin Li, Ruhan Luan, Chuanlong Sun, Jiangang Yu, taiping lu, Yadan Zhu, Dou-Dou Liang, Fengzhou Zhao

Optics Express

DOI

2024

Highly stable mixed-phase Cs-Cu-I films with tunable optoelectronic properties for UVB photodetector applications.

Tian Dan, Shunli He, Li-Chun Zhang, Bin Xia, Ning Cao, Xinbo Chu, Taiping Lu, Ya-Dan Zhu, Guanying Xie, Feng-Zhou Zhao

Optics Express

DOI

2023

Pressure-induced distinct excitonic properties of 2D perovskites with isomeric organic molecules for spacer cations.

Qingya Wang, Hua-Feng Ding, Tieshan Yang, Qinfeng Xu, Haifeng Mu, Tai-Ping Lu, Mengmeng Jiao, J. Zhang, Kun-Jian Cao, Zhigang Li, Honggang Wang, Shu-Fang Zhang, Kai Wang, Chuanlu Yang

Nanoscale

DOI

2023

Pulsed laser deposition of ZnGa2O4 thin films on Al2O3 and Si substrates for deep optoelectronic devices applications

Anqi Guo, Li-Chun Zhang, Ning-Yuan Cao, Tai-Ping Lu, Ya-Dan Zhu, Daniel Tian, Zhiying Zhou, Shunli He, B. Xia, Feng-Zhou Zhao

Applied Physics Express

DOI

2021

The formation of island-shaped morphology on the surface of InGaN/GaN QWs and the enhancement of carrier localization effect caused by high-density V-shaped pits

Zhi-Gang Jia, Xiao-Ning Hao, Tai-Ping Lu, Hai-Liang Dong, Zhi-Wei Jia, Ai-Qin Zhang, Shufang Ma, Jian-Wei Liang, Wei Jia, Tian-Bao Li, Bing-Qing Xu

DOI

2020

Realization of Ultrahigh Quality InGaN Platelets to be Used as Relaxed Templates for Red Micro-LEDs

Zhao-Xia Bi, Tai-Ping Lu, J. Colvin, Elis Sjögren, N. Vainorius, A. Gustafsson, Jonas Johansson, R. Timm, Filip Lenrick, R. Wallenberg, B. Monemar, L. Samuelson

ACS Applied Materials and Interfaces

DOI

2020

Improving the internal quantum efficiency of QD/QW hybrid structures by increasing the GaN barrier thickness

Zhi-Gang Jia, Xiaodong Hao, Tai-Ping Lu, Hai-Liang Dong, Zhi-Wei Jia, Shufang Ma, Jian-Wei Liang, Wei Jia, Bing-she Xu

RSC Advances

DOI

2020

Facile Preparation of Stable Solid-State Carbon Quantum Dots with Multi-Peak Emission

Yanning Zheng, Jing-Xia Zheng, Jun-Li Wang, Yong-Zhen Yang, Tai-Ping Lu, Xu-Guang Liu

Nanomaterials

DOI

2019

InGaN Platelets: Synthesis and Applications toward Green and Red Light-Emitting Diodes.

Zhao-Xia Bi, Filip Lenrick, J. Colvin, A. Gustafsson, O. Hultin, Ali Nowzari, Tai-Ping Lu, R. Wallenberg, R. Timm, A. Mikkelsen, B. Ohlsson, K. Storm, B. Monemar, L. Samuelson

Nano letters (Print)

DOI

2018

Effect of GaN Barrier Layer Thickness on Morphology and Optical Properties of Multilayer InGaN Quantum Dots

Kai Qu, Hai-Liang Dong, Jianjie Liu, Gangzhi Jia, M. Shufang, Jian-Wei Liang, Tai-Ping Lu, Bing-she Xu

China International Forum on Solid State Lighting

DOI

2017

非故意掺杂GaN层厚度对蓝光LED波长均匀性的影响

李天保，赵广洲，卢太平，朱亚丹，周小润，董海亮，尚林，贾伟，余春燕，许并社

《发光学报》

2017

Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells

Ya-Dan Zhu, Tai-Ping Lu, Xiao-Run Zhou, G. Zhao, Hai-Liang Dong, Zhi-Gang Jia, Xu-Guang Liu, Bing-she Xu

Nanoscale Research Letters

DOI

2017

Effect of Undoped GaN Layer Thickness on The Wavelength Uniformity of GaN Based Blue LEDs

Tian-Bao Li, Guang-Zhou Zhao, Tai-Ping Lu, Ya-Dan Zhu, Xiao-Run Zhou, Hai-Liang Dong, Lin Shang, Jia Wei, Chunyan Yu, Bing-She Xu

DOI

2017

Advantages of InGaN/GaN multiple quantum wells with two-step grown low temperature GaN cap layers

Ya-Dan Zhu, Tai-Ping Lu, Xiao-Run Zhou, G. Zhao, Hai-Liang Dong, Zhi-Gang Jia, Xu-Guang Liu, Bing-she Xu

DOI

2017

Origin of huge photoluminescence efficiency improvement in InGaN/GaN multiple quantum wells with low-temperature GaN cap layer grown in N2/H2 mixture gas

Ya-Dan Zhu, Tai-Ping Lu, Xiao-Run Zhou, G. Zhao, Hai-Liang Dong, Zhi-Gang Jia, Xu-Guang Liu, Bing-she Xu

DOI

2017

Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N2/H2-Grown GaN Barrier

Xiao-Run Zhou, Tai-Ping Lu, Ya-Dan Zhu, G. Zhao, Hai-Liang Dong, Zhi-Gang Jia, Yong-Zhen Yang, Yong-Kang Chen, Bing-she Xu

Nanoscale Research Letters

DOI

2017

Effect of small flow hydrogen treatment at the upper well/barrier interface on the properties of InGaN/GaN multiple quantum wells

Ya-Dan Zhu, Tai-Ping Lu, Xiao-Run Zhou, G. Zhao, Hai-Liang Dong, Zhi-Gang Jia, Xu-Guang Liu, Bing-she Xu

DOI

2016

中高温GaN插入层厚度对蓝光LED光电性能的影响

刘青明，卢太平，朱亚丹，韩丹，董海亮，尚林，赵广洲，赵晨，周小润，翟光美，贾志刚，梁建，马淑芳，薛晋波，李学敏，许并社

《发光学报》

2016

Effect of light Si doping on the properties of GaN

L. Shang, Guang-Mei Zhai, Zhi-Gang Jia, Fu-Hong Mei, Tai-Ping Lu, Xu-Guang Liu, Bing-she Xu

DOI

2016

Effect of potential barrier height on the carrier transport in InGaAs/GaAsP multi-quantum wells and photoelectric properties of laser diode.

Hai-Liang Dong, Jing Sun, Shufang Ma, Jian-Wei Liang, Tai-Ping Lu, Zhi-Gang Jia, Xu-Guang Liu, Bing-she Xu

Physical Chemistry, Chemical Physics - PCCP

DOI

2016

Influence of substrate misorientation on the photoluminescence and structural properties of InGaAs/GaAsP multiple quantum wells.

Hai-Liang Dong, Jing Sun, Shufang Ma, Jian-Wei Liang, Tai-Ping Lu, Xu-Guang Liu, Bing-she Xu

Nanoscale

DOI

2016

Effect of Medium-high Temperature Interlayer Thickness on The Optical and Electrical Properties of Blue Light Emitting Diodes

Qing-Ming Liu, Tai-Ping Lu, Ya-Dan Zhu, Dan Han, Hai-Liang Dong, L. Shang, Guang-Zhou Zhao, Zhao Chen, Xiao-Run Zhou, Guang-Mei Zhai, Zhi-Gang Jia, Jian-Wei Liang, Shufang Ma, Jin-Bo Xue, Xue-Min Li, Bing-Shen Xu

DOI

2015

A study of 2DEG properties in AlGaN/GaN heterostructure using GaN/AlN superlattice as barrier layers grown by MOCVD

Fang-Ming Chen, Hong Chen, Zhen Deng, Tai-Ping Lu, Yu-Tao Fang, Yang Jiang, Zi-Guang Ma, M. He

DOI

2015

Effect of interface nucleation time of the GaN nucleation layer on the crystal quality of GaN film

Rui Guo, Tai-Ping Lu, Zhi-Gang Jia, L. Shang, Hua Zhang, Rong Wang, Guang-Mei Zhai, Bing-she Xu

DOI

2015

Realization of high-luminous-efficiency InGaN light-emitting diodes in the “green gap” range

Yang Jiang, Yang-Feng Li, Yue-Qiao Li, Zhen Deng, Tai-Ping Lu, Zi-Guang Ma, P. Zuo, Long-Gui Dai, Lu Wang, Hai-Qiang Jia, Wen-Xin Wang, Junming Zhou, Wu-Ming Liu, Hong Chen

Scientific Reports

DOI

2015

The evolution of a GaN/sapphire interface with different nucleation layer thickness during two-step growth and its influence on the bulk GaN crystal quality

L. Shang, Tai-Ping Lu, Guang-Mei Zhai, Zhi-Gang Jia, Hua Zhang, Shufang Ma, Tian-Bao Li, Jian-Wei Liang, Xu-Guang Liu, Bing-she Xu

DOI

2015

Investigation of temperature-dependent photoluminescence in multi-quantum wells

Yu-Tao Fang, Lu Wang, Qing-Ling Sun, Tai-Ping Lu, Zhen Deng, Zi-Guang Ma, Yang Jiang, Hai-Qiang Jia, Wen-Xin Wang, Junming Zhou, Hong Chen

Scientific Reports

DOI

2014

Improved Photoluminescence in InGaN/GaN Strained Quantum Wells

Li Ding, Hong Chen, Miao He, Yang Jiang, Tai-Ping Lu, Zhen Deng, Fang-Sheng Chen, Fan Yang, Qi Yang, Yu-Lei Zhang

DOI

2014

Improvement of light power and efficiency droop in GaN-based LEDs using graded InGaN hole reservoir layer

Tai-Ping Lu, Zi-Guang Ma, Chun-Hua Du, Yu-Tao Fang, Fang-Sheng Chen, Yang Jiang, Lu Wang, Hai-Qiang Jia, Hong Chen

Applied Physics A

DOI

2014

Effect of Stair-Case Electron Blocking Layer on the Performance of Blue InGaN Based LEDs

Tai-Ping Lu, Zi-Guang Ma, Chun-Hua Du, Yu-Tao Fang, Fang-Ming Chen, Yang Jiang, Lu Wang, Hai-Qiang Jia, Hong Chen

Journal of Display Technology

DOI

2014

Modulating emission intensity of GaN-based green light emitting diodes on c-plane sapphire

Chun-Hua Du, Zi-Guang Ma, Junming Zhou, Tai-Ping Lu, Yang Jiang, Hai-Qiang Jia, Wu-Ming Liu, Hong Chen

DOI

2014

Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption

Chun-Hua Du, Zi-Guang Ma, Junming Zhou, Tai-Ping Lu, Yang Jiang, P. Zuo, Hai-Qiang Jia, Hong Chen

DOI

2014

Temperature-dependent photoluminescence in light-emitting diodes

Tai-Ping Lu, Zi-Guang Ma, Chun-Hua Du, Yu-Tao Fang, Hai-Yan Wu, Yang Jiang, Lu Wang, Long-Gui Dai, Hai-Qiang Jia, Wuming Liu, Hong Chen

Scientific Reports

DOI

2013

Influence of Si doping on the structural and optical properties of InGaN epilayers

Ping-Yuan Lu, Zi-Guang Ma, S. Su, Li Zhang, Hong Chen, Hai-Qiang Jia, Yang Jiang, Wei-Ning Qian, Geng Wang, Tai-Ping Lu, Miao He

DOI

2013

Effect of InxGa1−xN “continuously graded" buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition

Wei-Ning Qian, S. Su, Hong Chen, Zi-Guang Ma, Kebao Zhu, Miao He, Ping-Yuan Lu, Geng Wang, Tai-Ping Lu, Chun-Hua Du, Qiao Wang, Wen-Bo Wu, Wei-Wei Zhang

DOI

2013

The Influence of Graded AlGaN Buffer Thickness for Crack-Free GaN on Si(111) Substrates by using MOCVD

Pei-Qiang Xu, Yang Jiang, Zi-Guang Ma, Zhen Deng, Tai-Ping Lu, Chun-Hua Du, Yu-Tao Fang, P. Zuo, Hong Chen

DOI

2013

Investigation of GaN-based light-emitting diodes using a p-GaN/i-InGaN short-period superlattice structure as last quantum barrier

Xiao-Ping Liu, G. Fan, Shuwen Zheng, Chang-Chun Gong, Tai-Ping Lu, Yun-Yan Zhang, Yi-Qin Xu, Tao Zhang

DOI

2012

Efficiency enhancement of InGaN based blue light emitting diodes with InGaN/GaN multilayer barriers

Jin-Hui Tong, Shu-Ti Li, Tai-Ping Lu, Chao Liu, Hai-Long Wang, Le-Juan Wu, Bi-Jun Zhao, Xingfu Wang, Xin Chen

DOI

2012

Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers

Le-Juan Wu, Shuti Li, Chao Liu, Hai-Long Wang, Tai-Ping Lu, Kang Zhang, Guo-Wei Xiao, Yu-Gang Zhou, Shuwen Zheng, Yi'an Yin, Xiaodong Yang

DOI

2012

Influence of the p-doping distribution in GaN barriers on the performance of blue light-emitting diodes

Chao Liu, Tai-Ping Lu, Zhiwei Ren, Xin Chen, Bi-Jun Zhao, Yi'an Yin, Jin-Hui Tong, Shuti Li

Asia Communications and Photonics conference and Exhibition

2012

Study of blue InGaN multiple quantum wells light-emitting diodes with p-type quantum barriers

Chao Liu, Tai-Ping Lu, Zhiwei Ren, Xin Chen, Bi-Jun Zhao, Yi'an Yin, Jin-Hui Tong, Shuti Li

Asia Communications and Photonics conference and Exhibition

DOI

2012

Enhanced Performance of Blue Light-Emitting Diodes With InGaN/GaN Superlattice as Hole Gathering Layer

Chao Liu, Tai-Ping Lu, Le-Juan Wu, Hai-Long Wang, Yi'an Yin, Guo-Wei Xiao, Yu-Gang Zhou, Shuti Li

IEEE Photonics Technology Letters

DOI

2012

Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer

Tai-Ping Lu, Shuti Li, Chao Liu, Kang Zhang, Yi-Qin Xu, Jin-Hui Tong, Le-Juan Wu, Hai-Long Wang, Xiaodong Yang, Yi'an Yin, Guo-Wei Xiao, Yu-Gang Zhou

DOI

2012

Advantage of dual wavelength light-emitting diodes with dip-shaped quantum wells

Yi-Qin Xu, G. Fan, De-Tao Zhou, Xin Li, Tai-Ping Lu, Fang Zhao, Yun-Yan Zhang, Shuwen Zheng, Chang-Chun Gong

DOI

2011

The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer

Tai-Ping Lu, Shuti Li, Kang Zhang, Chao Liu, Guo-Wei Xiao, Yu-Gang Zhou, Shuwen Zheng, Yi'an Yin, Le-Juan Wu, Hai-Long Wang, Xiaodong Yang

DOI

2011

Blue InGaN light-emitting diodes with dip-shaped quantum wells

Tai-Ping Lu, Shuti Li, Kang Zhang, Chao Liu, Guo-Wei Xiao, Yu-Gang Zhou, Shuwen Zheng, Yi'an Yin, Le-Juan Wu, Hai-Long Wang, Xiaodong Yang

DOI

2011

Influence of the Quality of AlN Buffer Layer on the Quality of GaN Epitaxial Layer on Silicon Substrate

Kang Zhang, Tai-Ping Lu, Shuti Li

DOI

2011

Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes.

Tai-Ping Lu, Shuti Li, Kang Zhang, Chao Liu, Yi'an Yin, Le-Juan Wu, Hai-Long Wang, Xiaodong Yang, Guo-Wei Xiao, Yu-Gang Zhou

Optics Express

DOI

精选作品

期刊论文

High performance self-powered deep ultraviolet photodetector based on type-II CuBr/β-Ga2O3 p-n heterostructure for UV imaging

Impact of Al content in the n-AlGaN hole current confinement layer on the performance of GaN-based VCSELs.

Advantages of AlGaN-Based 275-nm Deep-Ultraviolet LEDs with a Tapered N-shaped Aluminum-Composition Graded Electron Blocking Layer

Performance improvement of green VCSELs with GaN/low-indium-content InGaN hybrid last quantum barrier

Full-band UV Photodetection with high performance via CuGa2O4 film grown on p-GaN

Photo-generated carriers behavior under varying temperature conditions

CMOS-compatible Eu2+-doped CsCu2I3 films with improved quantum yield for white-light emission and information encryption

Interface-engineered p-CsCu <sub>2</sub> I <sub>3</sub> /n-Ga <sub>2</sub> O <sub>3</sub> nanowire heterojunctions for self-powered ultravio

Enhanced self-powered ultraviolet photodetector based on textured p-CsCu2I3/n-ZnO heterojunction grown on polystyrene microsphere substrate

Performance enhancement of GaN-based VCSELs with an n-AlGaN hole current confinement layer.

Self-powered deep ultraviolet photodetector based on p-CuI/n-ZnGa 2 O 4 heterojunction with high sensitivity and fast speed

Highly stable mixed-phase Cs-Cu-I films with tunable optoelectronic properties for UVB photodetector applications.

Pressure-induced distinct excitonic properties of 2D perovskites with isomeric organic molecules for spacer cations.

Pulsed laser deposition of ZnGa2O4 thin films on Al2O3 and Si substrates for deep optoelectronic devices applications

The formation of island-shaped morphology on the surface of InGaN/GaN QWs and the enhancement of carrier localization effect caused by high-density V-shaped pits

Realization of Ultrahigh Quality InGaN Platelets to be Used as Relaxed Templates for Red Micro-LEDs

Improving the internal quantum efficiency of QD/QW hybrid structures by increasing the GaN barrier thickness

Facile Preparation of Stable Solid-State Carbon Quantum Dots with Multi-Peak Emission

InGaN Platelets: Synthesis and Applications toward Green and Red Light-Emitting Diodes.

Effect of GaN Barrier Layer Thickness on Morphology and Optical Properties of Multilayer InGaN Quantum Dots

非故意掺杂GaN层厚度对蓝光LED波长均匀性的影响

Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells

Effect of Undoped GaN Layer Thickness on The Wavelength Uniformity of GaN Based Blue LEDs

Advantages of InGaN/GaN multiple quantum wells with two-step grown low temperature GaN cap layers

Origin of huge photoluminescence efficiency improvement in InGaN/GaN multiple quantum wells with low-temperature GaN cap layer grown in N2/H2 mixture gas

Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N2/H2-Grown GaN Barrier

Effect of small flow hydrogen treatment at the upper well/barrier interface on the properties of InGaN/GaN multiple quantum wells

中高温GaN插入层厚度对蓝光LED光电性能的影响

Effect of light Si doping on the properties of GaN

Effect of potential barrier height on the carrier transport in InGaAs/GaAsP multi-quantum wells and photoelectric properties of laser diode.

Influence of substrate misorientation on the photoluminescence and structural properties of InGaAs/GaAsP multiple quantum wells.

Effect of Medium-high Temperature Interlayer Thickness on The Optical and Electrical Properties of Blue Light Emitting Diodes

A study of 2DEG properties in AlGaN/GaN heterostructure using GaN/AlN superlattice as barrier layers grown by MOCVD

Effect of interface nucleation time of the GaN nucleation layer on the crystal quality of GaN film

Realization of high-luminous-efficiency InGaN light-emitting diodes in the “green gap” range

The evolution of a GaN/sapphire interface with different nucleation layer thickness during two-step growth and its influence on the bulk GaN crystal quality

Investigation of temperature-dependent photoluminescence in multi-quantum wells

Improved Photoluminescence in InGaN/GaN Strained Quantum Wells

Improvement of light power and efficiency droop in GaN-based LEDs using graded InGaN hole reservoir layer

Effect of Stair-Case Electron Blocking Layer on the Performance of Blue InGaN Based LEDs

Modulating emission intensity of GaN-based green light emitting diodes on c-plane sapphire

Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption

Temperature-dependent photoluminescence in light-emitting diodes

Influence of Si doping on the structural and optical properties of InGaN epilayers

Effect of InxGa1−xN “continuously graded" buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition

The Influence of Graded AlGaN Buffer Thickness for Crack-Free GaN on Si(111) Substrates by using MOCVD

Investigation of GaN-based light-emitting diodes using a p-GaN/i-InGaN short-period superlattice structure as last quantum barrier

Efficiency enhancement of InGaN based blue light emitting diodes with InGaN/GaN multilayer barriers

Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers

Influence of the p-doping distribution in GaN barriers on the performance of blue light-emitting diodes

Study of blue InGaN multiple quantum wells light-emitting diodes with p-type quantum barriers

Enhanced Performance of Blue Light-Emitting Diodes With InGaN/GaN Superlattice as Hole Gathering Layer

Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer

Advantage of dual wavelength light-emitting diodes with dip-shaped quantum wells

The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer

Blue InGaN light-emitting diodes with dip-shaped quantum wells

Influence of the Quality of AlN Buffer Layer on the Quality of GaN Epitaxial Layer on Silicon Substrate

Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes.

会议论文

采用MOCVD技术在GaN衬底上生长p型GaP薄膜的研究

硅衬底上AIN缓冲层质量对GaN质量的影响

研究方向