郭霞，刘巧莉，李冲，刘白，董建，沈光地 (2015). Phosphor-free white light-emitting diodes. Chinese Physics B.
Li Ma, Shen Guang-di, Zhiyuan Gao, Xu Chen (2015). Enhanced performances of AlGaInP-based light-emitting diodes with Schottky current blocking layers. Chinese Physics B.DOI
Li Ma, Shen Guang-di, Chen Xu, Zhiyuan Gao (2015). Design and analysis of AlGaInP-based light emitting diodes with SiO2current blocking layer. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE.DOI
马莉，沈光地，刘建朋，高志远，徐晨，王勋 (2014). Theoretical and experimental analysis of the effects of the series resistance on luminous efficacy in GaN-based light emitting diodes. Chinese Physics B.
史国柱，关宝路，李硕，王强，沈光地 (2013). Power dissipation in oxide-confined 980-nm vertical-cavity surface-emitting lasers. Chinese Physics B.
崔碧峰，郭伟玲，杜晓东，李建军，邹德恕，沈光地 (2012). A tunnel regenerated coupled multi-active-region large optical cavity laser with a high quality beam. Chinese Physics B.
Zhenbo Zhao, Chen Xu, Yiyang Xie, Kang Zhou, Fa Liu, Shen Guang-di (2012). Single-mode low threshold current multi-hole vertical-cavity surface-emitting lasers. Chinese Physics B.DOI
Guo-Zhu Shi, Baolu Guan, Xia Guo, Shuo Li, Qiang Wang, Shen Guang-di (2012). Low threshold 980-nm tunable vertical-cavity surface-emitting lasers. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE.DOI
Shen Guang-di (2012). Scanning electron acoustic microscopy and electron backscattering diffraction study of GaN/Al_2O_3 hetero-epitaxial layer film. Journal of Optoelectronics·laser.
Shen Guang-di (2012). Investigation of effects of source flux on the properties of p-GaN flim grown by MOCVD. Journal of Optoelectronics·laser.
Yi-Xin Chen, Shen Guang-di, Weiling Guo, Chen Xu, Jian-Jun Li (2011). Internal quantum efficiency drop induced by the heat generation inside of light emitting diodes (LEDs). Chinese Physics B.DOI
Yixin Chen, Shen Guang-di, Weiling Guo, Zhiyuan Gao (2011). AlGaInP—Si glue bonded high performance light emitting diodes. Chinese Physics B.DOI
高伟，郭伟玲，邹德恕，蒋文静，刘自可，沈光地 (2011). Absorption of photons in the thin film AlGalnP light emitting diode. Journal of Semiconductors.
孟丽丽，陈依新，马莉，刘自可，沈光地 (2011). ICP dry etching ITO to improve the performance of GaN-based LEDs. Journal of Semiconductors.
Yixin Chen, Shen Guang-di, Yan-Xu Zhu, Weiling Guo, Jianjun Li (2011). Efficiency-enhanced AlGaInP Light-Emitting Diodes with Thin Window Layers and Coupled Distributed Bragg Reflectors. Chinese Physics Letters.DOI
Li Ma, Wenjing Jiang, Deshu Zou, Meng Li-Li, Shen Guang-di (2011). Improved light extracion efficiency in AlGaInP-Based Diodes (LEDs) by applying a nanohole structure on GaP window layer. Journal of Physics Conference Series.DOI
Falin Liu, Chen Xu, XIE Yi-Yang, Zhao Zhen-Bo, Zhou Kang, Baoqiang Wang, LIU Ying-Ming, Shen Guang-di (2011). Full 3D FDTD analysis of Electromagnetic Field in Photonic Crystal VCSEL. Journal of Physics Conference Series.DOI
Zhou Kang, Chen Xu, XIE Yi-Yang, Zhao Zhen-Bo, Liu-Fa, LIU Ying-Ming, Baoqiang Wang, Shen Guang-di (2011). A Single-Fundamental-Mode Photonic Crystal Vertical Cavity Surface Emitting Laser with Seven-point Defect. Journal of Physics Conference Series.DOI
Zhao Zhen-Bo, Xu Chen, XIE Yi-Yang, Zhou Kang, Falin Liu, Baoqiang Wang, LIU Ying-Ming, Shen Guang-di (2011). Effect of SiO2Reflection Reducing Coating on the Vertical Cavity Surface Emitting Laser. Journal of Physics Conference Series.DOI
Shen Guang-di (2011). Impact of Mask on the Effect of ICP Etched on GaAs-Based Two-Dimensional Photonic Crystals. Nanotechnology and Precision Engineering.
Shen Guang-di (2011). Properties of the InGaN:Mg with roughened surface and high hole concentration and its light-emitting diode application. Journal of Optoelectronics·laser.
Shen Guang-di (2011). The Characteristics of High Power LED at Low and High Temperature. Journal of Beijing University of Technology.
Jun Han, Yanhui Xing, Jun Jie Deng, Yanxu Zhu, Xu Chen, Shen Guang-di (2011). Surface morphology and electrical properties control of p-InGaN by MOCVD growth temperature to improve LED light power. Journal of Functional Biomaterials.
Zhen Yang, Jianjun Li, Yu-zhu Kang, Jun Deng, Jun Han, Deshu Zou, Shen Guang-di (2010). Effect of top distributed Bragg reflectors on the performance of 650 nm AlGaInP resonant cavity light-emitting diodes. Optoelectronics Letters.DOI
高伟，郭伟玲，邹德恕，秦圆，蒋文静，沈光地 (2010). Thin film AlGaInP light emitting diodes with different reflectors. Journal of Semiconductors.
Jiang Wenjing, Chen Xu, Shen Guang-di, Fang Rong, Wei Gao (2010). Improved light extraction in AlGaInP-based LEDs using a self-assembly metal nanomask. Journal of Semiconductors.DOI
沈光地（2010）. 半导体发光二极管LED的测试方法. 《中国科技财富》.
Xuan Ya, Jian-Jun Li, Rui Chen, Chen Yixin, Zou Deshu, Shen Guang-di (2010). Temperature characteristics of the red Resonant Cavity light emitting diodes. Advances in Optoelectronics and Micro/nano-optics.DOI
Rui Chen, Jianjun Li, Xuan Ya, Jun Deng, Jun Han, Shaojun Luo, Lingchun Gao, Shen Guang-di (2010). Computational analysis of GaAs/AlGaAs deposition in MOCVD vertical rotating disk reactor. IEEE International Conference on Solid-State and Integrated Circuit Technology.DOI
Xie Yi-Yang, Chen Xu, Qiang Kan, Wang Chun-Xia, Liu Ying-Ming, Baoqiang Wang, Chen Hong-Da, Shen Guang-di (2010). A Single-Fundamental-Mode Photonic Crystal Vertical Cavity Surface Emitting Laser. Chinese Physics Letters.DOI
Shen Guang-di (2010). GaP Surface Profile Control Through ICP Etching. Nanotechnology and Precision Engineering.
Shen Guang-di (2010). Wafer-bonded AlGaInP LEDs with reframed surface. Journal of Optoelectronics·laser.
Shen Guang-di (2010). The Relations between the Threshold Current and the Length of Cavity of Quantum Well Lasers. Research & Progress of SSE Solid State Electronics.
Wei Gao, Guo Weiling, Yanxu Zhu, Jiang Wenjing, Shen Guang-di (2009). Reliability of AlGaInP light emitting diodes with an ITO current spreading layer. Journal of Semiconductors.DOI
Kang Yuzhu, Jianjun Li, Ding Liang, Yang Zhen, Jun Han, Deng Jun, Zou Deshu, Shen Guang-di (2009). Epitaxy and Characteristics of Resonant Cavity LEDs at 650 nm. Journal of Semiconductors.DOI
Baolu Guan, Xia Guo, Jun Deng, Shen Guang-di (2009). Properties of wavelength tunable VCSELs with MEMS cantilever. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE.DOI
Shen Guang-di (2009). The Lateral Confinement of Strip Laser Bars. Research & Progress of SSE Solid State Electronics.
Shen Guang-di (2009). The effect of RTA process on optical and electrical characters of E-beam evaporated ITO films. Journal of Optoelectronics·laser.
Shen Guang-di (2009). The influence of V/III ratio to doping in P—GaP and Red LED. Journal of Optoelectronics·laser.
Shen Guang-di (2009). Thermal characteristics of dual-wavelength laser diode cascaded by tunnel junction. Laser & Infrared.
Shen Guang-di (2009). A new approach to enhance the extraction efficiency of LED. Journal of Optoelectronics·laser.
Shen Guang-di (2009). Assessing the Epitaxy Structure of Quantum Well Infrared Photodetector by Photoluminescence Measurement. Research & Progress of SSE Solid State Electronics.
Shen Guang-di (2009). Study on Power Conversion Efficiency of High-power Laser Diodes. Bandaoti guangdian.
Shen Guang-di (2009). Influence of evaporation rate on optical constants of ITO deposited by e-beam evaporation. Journal of Functional Biomaterials.
Lei Zhang, Cui Bi-Feng, Jianjun Li, Guo Wei-Lling, Wang Zhi-Qun, Shen Guang-di (2008). A Novel Kind of Transverse Micro-Stack High-Power Diode Bars. Chinese Physics Letters.DOI
Guo Xia, Shen Guang-di (2008). The scalability of the tunnel-regenerated multi-active-region light-emitting diode structure. Chinese Physics B.DOI
Shen Guang-di (2008). Measurement and Evaluation of Micro-Sized Strain Fields in GaN Epitaxial Structure. Dianzi xuebao.
Shen Guang-di (2008). Analysis of temperature of special-gas infrared detector. Gongneng cailiao yu qijian xuebao.
Shen Guang-di (2008). Study of Omni Directional Reflector in AlGaInP Light Emitting Diodes. Research & Progress of SSE Solid State Electronics.
Shen Guang-di (2008). MOCVD growth two active regions AlGaInP LED. Journal of Optoelectronics·laser.
Shen Guang-di (2008). Study of Inductively Coupled Plasma Etching GaP in LED Fabrication. Research & Progress of SSE Solid State Electronics.
Shen Guang-di (2008). Nano-structured surface fabrication for AlGaInP light emitting diodes. Journal of Optoelectronics·laser.
Shen Guang-di (2008). Temperature Characteristic of Reflectivity of Omni-directional Reflector in the High Brightness Light-emitting Diodes. Research & Progress of SSE Solid State Electronics.
Shen Guang-di (2008). Electron backscatter diffraction analysis of mirco-sized stress in the GaAs-AlGaAs epitaxial structure. Journal of Functional Biomaterials.
Shen Guang-di (2008). The Color Matching of White LEDs Based on Two/Three Prinary Colors and Phosphor Converted. Research & Progress of SSE Solid State Electronics.
Shen Guang-di (2008). Research of the Ohmic Contact between p-InGaN and Ni/Au. Research & Progress of SSE Solid State Electronics.
Shen Guang-di (2008). Enhancement of Extraction Efficiency of Red LED via Surface Roughening. Research & Progress of SSE Solid State Electronics.
Shen Guang-di (2008). Investigation of Electrical Properties of InGaN∶Mg Films. Research & Progress of SSE Solid State Electronics.
Shen Guang-di (2007). Stress Controlled Silicon Nitride Thin Film Deposited by Plasma Enhanced Chemical Vapour Deposition. 《半导体光子学与技术：英文版》.
Di Wu, Guo Xia, Xiaoling Gu, Yibo Li, Shen Guang-di (2007). Strain Field in GaAs/GaN Wafer-Bonding Interface and Its Microstructure. Chinese Physics Letters.DOI
Jianming Zhang, Deshu Zou, Xu Chen, Weiling Guo, Zhu Yan-Xu, Ting Liang, Xiaoli Da, Jianjun Li, Shen Guang-di (2007). AlGaInP thin-film LED with omni-directionally reflector and ITO transparent conducting n-type contact. Chinese Physics.DOI
Jun Han, Jian-Jun Li, Jun Deng, Yanhui Xing, X.Y. Yu, Wei-zhi Lin, Ying Liu, Shen Guang-di (2007). Wide reflected angle DBR red light LED. Optoelectronics Letters.DOI
Jun Han, Jian-Jun Li, Jun Deng, Yanhui Xing, X.Y. Yu, Wei-zhi Lin, Ying Liu, Shen Guang-di (2007). Fabrication and property analysis of AIGaInP red light LED with high bright. Optoelectronics Letters.DOI
Niu Nan-Hui, Wang Huaibing, Liu Jian-ping, Naixin Liu, Xing Yanhui, Jun Han, Deng Jun, Shen Guang-di (2007). Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction. Solid-State Electronics.DOI
Nan Zhang, Bifeng Cui, Bin Liu, Deshu Zou, Jianjun Li, Guo Gao, Zhang Lei, Zhiqun Wang, Shen Guang-di (2007). Current expansion of high-power diode laser bars. High Power Laser and Particle Beams.
Liang Ting, Guo Xia, Guan Bao-Lu, Guo Jing, Xiaoling Gu, Lin Qiao-Ming, Shen Guang-di (2007). A Flip-Chip AlGaInP LED with GaN/Sapphire Transparent Substrate Fabricated by Direct Wafer Bonding. Chinese Physics Letters.DOI
Jianming Zhang, Deshu Zou, Chen Xu, Zhu Yan-Xu, Ting Liang, Xiaoli Da, Shen Guang-di (2007). High power and high reliability GaN/InGaN flip-chip light-emitting diodes. Chinese Physics.DOI
Xing Yanhui, Jun Han, Liu Jian-ping, Niu Nan-Hui, Jun Jie Deng, Litong, Shen Guang-di (2007). Interrupted Mg doping of GaN with MOCVD for improved p-type layers. Vacuum.DOI
Nanhui Niu, Huaibing Wang, Jianping Liu, Naixin Liu, Yanhui Xing, Jun Han, Jun Deng, Shen Guang-di (2007). Effects of growth interruption on the properties of InGaN/GaN MQWs grown by MOCVD. Optoelectronics Letters.DOI
Zhu Yan-Xu, Chen Xu, Jun Han, Shen Guang-di (2007). Flip-Chip GaN-Based Light-Emitting Diodes with Mesh-Contact Electrodes. Chinese Physics Letters.DOI
Shen Guang-di (2007). Micro-Etching Holes in the Thin Film Fabrication. Nanotechnology and Precision Engineering.
Shen Guang-di (2007). Effect of LD Strip Widthes on the Lasing Wavelengthes. Journal of Optoelectronics·laser.
Shen Guang-di (2007). Steady-State Temperature Distribution Changes of Stripe Quantum-Well Laser Caused by Solder Void. Chinese Journal of Lasers.
Shen Guang-di (2007). Investigation of different doping methods to the p-type GaN. Journal of Functional Biomaterials.
Shen Guang-di (2007). Research of Peak Wavelength Shifts of GaN-based Blue Light-emitting Diodes. Bandaoti guangdian.
Shen Guang-di (2007). Influence of III/V Ratio on MOCVD Growth of AlGaInP. Bandaoti guangdian.
Shen Guang-di (2007). Junction Temperature Measurement of Semiconductor Laser Diode. Bandaoti guangdian.
Shen Guang-di (2007). Investigation of p-GaN Thermal Annealing and Light Emitting Diode. Research & Progress of SSE Solid State Electronics.
Zhang Lei, Guo Xia, Liang Ting, Xiaoling Gu, Lin Qiao Ming, Shen Guang-di (2006). Color rendering and luminous efficacy of trichromatic and tetrachromatic LED-based white LEDs. Microelectronics Journal.DOI
Guan Bao-Lu, Guo Xia, Jun Jie Deng, Qu Hong-Wei, Peng Lian, Limin Dong, Chen Min, Shen Guang-di (2006). Micromechanical tunable vertical-cavity surface-emitting lasers. Chinese Physics.DOI
Linlin Zhao, Chen Xu, Shen Guang-di (2006). Analysis for load limitation of square-shaped silicon diaphragms. Solid-State Electronics.DOI
Xiong-wen Shu, Chen Xu, Zeng-xia Tian, Dan Luo, Shen Guang-di (2006). Effects of Ar ion assisted deposition on the optical and electrical characteristics of electron-beam-evaporated amorphous Si films. Optoelectronics Letters.DOI
王婷，郭霞，方圆，刘斌，沈光地 (2006). Integration of GaN thin films with silicon substrates by fusion bonding and laser lift-off. Chinese Optics Letters.
Shen Guang-di (2006). Electrical Characteristics of InGaN/GaN MQW Blue Light-emitting Diodes. Bandaoti guangdian.
Xiong-wen Shu, Chen Xu, Zeng-xia Tian, Shen Guang-di (2006). Ion Cleaning of Facets for Improving the Reliability of High Power 980 nm Semiconductor Lasers. Chinese Physics Letters.DOI
Shen Guang-di (2006). Analysis for Load Limitation of Square Shaped Boron-Doped Silicon Diaphragm. Chuangan jishu xuebao.
Shen Guang-di (2006). Computer simulation of high-reflection films and its application to practice. Guangdian gongcheng.
Shen Guang-di (2006). Mechanism of discharge current affecting pressure in vacuum chamber. Vacuum.
Shen Guang-di (2006). Fabrication and Characterization of Free Standing Structure Membrane with High Width-Thickness Ratio. Chuangan jishu xuebao.
Shen Guang-di (2006). Temperature field simulation of GaN material during Al_2O_3/GaN laser lift-off. Guangdian gongcheng.
Shen Guang-di (2006). Current expansion of GaN-based LED and its affection to the device. Chinese Journal of Quantum Electronics.
Shen Guang-di (2006). Investigations of p-GaN cap layers of InGaN/GaN MQW Blue LEDs grown by MOCVD. Journal of Optoelectronics·laser.
Shen Guang-di (2006). Influence of Mg Flow Rate on the Properties of P-GaN Films. Research & Progress of SSE Solid State Electronics.
Shen Guang-di (2006). Determining method of the thickness of the distributed Bragg reflector grown by metal-organic chemical vapor depositon. Optics and Precision Engineering.
Shen Guang-di (2006). Research and Progress in Reliability of GaN-Based LED. Semiconductor Technology.
Shen Guang-di (2006). Study of (NH_4)_2S Passivation with Facet of 808 nm Laser Diodes. Research & Progress of SSE Solid State Electronics.
Shen Guang-di (2006). The Influence of Stress on Mechanical Performance of Highly Doped Square-Shaped Silicon Diaphragm. Chuangan jishu xuebao.
Shen Guang-di (2006). Design the vertical-cavity surface emitting laser using fresnel matrix method. Guangdian gongcheng.
Shen Guang-di (2006). Effect of Current Crowding on the Reliability of GaN-based LEDs. Laser & Infrared.
Shen Guang-di (2006). InAlGaAs Quantum Well 808nm Laser Diode with Low Threshold Current and High Efficiency. Chinese Journal of Lasers.
Niu Nan-Hui, Wang Huaibing, Liu Jian-ping, Naixin Liu, Xing Yanhui, Jun Han, Deng Jun, Shen Guang-di (2005). Improved quality of InGaN/GaN multiple quantum wells by a strain relief layer. Journal of Crystal Growth.DOI
Chen Min, Guo Xia, Deng Jun, Gai Hong-Xing, Limin Dong, Qu Hong-Wei, Guan Bao-Lu, Gao Guo, Shen Guang-di (2005). Low-Threshold and High-Power Oxide-Confined 850 nm AlInGaAs Strained Quantum-Well Vertical-Cavity Surface-Emitting Lasers Based on Intra-Cavity Contacted Structure. Chinese Physics Letters.DOI
Zhu Wenjun, Guo Xia, Peng Lian, Zou Deshu, Gao Guo, Shen Guang-di (2005). Analysis of the operating point of a novel multiple-active-region tunneling-regenerated vertical-cavity surface-emitting laser. International Conference on Solid-State and Integrated Circuit Technology (ICSICT).DOI
Bifeng Cui, Peng Lian, Yin Tao, Chen Changhua, Jianjun Li, Gao Guo, Zhou De-shu, Shen Guang-di, Xiaoyü Ma, Lianghui Chen (2005). Cascaded coupled large optical cavity semiconductor lasers. International Conference on Solid-State and Integrated Circuit Technology (ICSICT).DOI
Xia Guo, Guohong Wang, Wenjun Zhu, Jinyu Du, Guo Gao, Deshu Zou, Shen Guang-di, Xiaoyu Ma, Lianghui Chen (2005). The study of novel high brightness 620 nm AlGaInP light emitting diodes. International Conference on Solid-State and Integrated Circuit Technology (ICSICT).DOI
Jun Deng, Bin Wang, Jun Han, Jianjun Li, Shen Guang-di (2005). GaAs/AlGaAs quantum well infrared photodetector with low noise. Optoelectronics Letters.DOI
Hongwei Qu, Xia Guo, Limin Dong, Honghang Wang, Jun Deng, Peng Lian, De-shu Zhou, Shen Guang-di (2005). Temperature characteristics of InGaAs/GaAs vertical cavity surface emitting laser. Optoelectronics Letters.DOI
Bo Yu, Deng Jun, Jianjun Li, Niu Nanbui, Gai Hong-Xing, Jun Han, Peng Lian, Xing YanHui, Xia Guo, Qu Hong Wei, Shen Guang-di (2005). MOVPE growth of 980nm VCSEL using optical in-situ techniques. International Conference on Solid-State and Integrated Circuits Technology.DOI
Xia Guo, Qu Hongwei, Xiaoli Da, Dong Limin, Deng Jun, Peng Lian, Zuntu Xu, Shen Guang-di (2005). Study on intra-cavity contacted oxide-confined vertical cavity surface emitting laser. International Conference on Solid-State and Integrated Circuits Technology.DOI
Yang Daoliong, Xu Chen, Linlin Zhao, Hui Zhao, Huo Wenxiao, Shen Guang-di (2005). [mproving bonding quality in MEMS using silicon/gold /glass bonding by laser. International Conference on Solid-State and Integrated Circuits Technology.DOI
Shen Guang-di (2005). Study on the Temperature Characteristics of Vertical Cavity Surface Emitting Laser. Laser & Infrared.
Shen Guang-di (2005). Optimization of MOCVD-growth strain InGaAs/GaAs quantum wells and its application for 980 nm LD. Chinese Journal of Quantum Electronics.
Shen Guang-di (2005). Study on the MOCVD Growth of (Al)GaInP. Laser & Infrared.
Shen Guang-di (2005). Measurement and analysis on Young's modulus of silicon super thin free-handing diaphragm. Gongneng cailiao yu qijian xuebao.
Shen Guang-di (2005). Study of the optical characteristic of the vertical surface emitting laser using optical thin-film model. Optical Technique.
Shen Guang-di (2005). Small Capacitance Fast Testing System for Novel Room Temperature Infrared Detector. Yibiao jishu yu chuanganqi.
Shen Guang-di (2005). Transient Temperature Field Study of GaN Material in Laser Lift-off Technique Based on Finite Element Method. Chinese Journal of Lasers.
Shen Guang-di (2005). Study on the Lasing Characteristics of Tunnel-junction-regenerated VCSEL.
Wanrong Zhang, Liu Hai-jiang, Wang Li-xin, Wang Dong, Zhiguo Li, Chen Yao-hai, Chen Jianxin, Shen Guang-di (2003). The effect of base dopant out-diffusion and undoped SiGe or Si spacer layers at both sides of the base on the characteristics of microwave Si/SiGe/Si HBT's.DOI
Shen Guang-di (2003). Study on Al_xGa_(1-x)As selective wet oxidation technology. Infrared and Laser Engineering.
Shen Guang-di (2003). Analysis on the Characteristics of Multiple-active-region Vertical-cavity Surface-emitting Laser.
Shen Guang-di (2003). Etching study of micro-cavity with flexible film of novel infrared detector. Infrared and Laser Engineering.
Wanrong Zhang, Zhiguo Li, Luo Jin-sheng, Chang Yao-Hai, Chen Jian-xin, Shen Guang-di (2002). Carrier freeze-out in strained p-Si/sub 1-x/Ge/sub x/ layers. International Conference on Solid-State and Integrated Circuit Technology (ICSICT).DOI
Shi Yan-Li, Shen Guang-di, Xinghui Wu, Feng Wen-Qing, Chen Tie-Jin (2002). Study and mechanism analysis of photochemical oxidation for n-type mercury cadmium tellurium photoconductance detectors. International Conference on Solid-State and Integrated Circuit Technology (ICSICT).DOI
Hongdong Zhao, Shen Guang-di, Gao Guo, Zhang Cun-Shan, Yin Tao, Changhua Chen, Lian PEng, Zhang Yi-Mo (2002). Spontaneous emission in planar quantum well micro-cavities. International Conference on Solid-State and Integrated Circuit Technology (ICSICT).DOI
Zuntu Xu, Yang Guowen, Xiaoyu Ma, Yin Tao, Peng Lian, Zhang Jingming, Xu Junying, Lianghui Chen, Shen Guang-di (2002). High performance InGaAs/InGaAsP strained quantum well lasers with AlGaAs cladding layers. International Conference on Solid-State and Integrated Circuit Technology (ICSICT).DOI
Feng Shiwei, Xie Xuesong, Liu Wei, Lü Changzhi, Yan He, Shen Guang-di (2002). The analysis of thermal characteristics of the laser diode by transient thermal response method. International Conference on Solid-State and Integrated Circuit Technology (ICSICT).DOI
Yin Tao, Gao Guo, Chen Changhua, Zuntu Xu, Peng Lian, Tao Changbao, Zhao Hongdong, Du Jinyu, Zou Desu, Chen Jianxin, Shen Guang-di (2002). Study of the optical and electrical properties of InGaAs quantum well lasers with carbon doped cladding layer. International Conference on Solid-State and Integrated Circuit Technology (ICSICT).DOI
Zhao Lixin, Shen Guang-di (2002). The microwave performance of SiGe/Si HBTs and amplifiers. International Conference on Microwave and Millimeter Wave Technology (ICMMT).DOI
Wanrong Zhang, LI Zhi-guo, Fuchen Mu, Wang Li-xin, Sun Ying-hua, Cheng Yaohai, Jianxin Chen, Shen Guang-di (2002). A rapid evaluation method for degradation activation energy of n-GaAs ohmic contacts with and without TiN diffusion barrier layers. International Symposium on the Physical and Failure Analysis of Integrated Circuits.DOI
Zou Deshu, Chen Xu, Chen Jianxin, Shi Chen, Du Jinyu, Jun Deng, Zhang Li, Shen Guang-di (2002). SiGe/Si HBTs with current gain of negative temperature dependence. International Conference on Solid-State and Integrated Circuit Technology (ICSICT).DOI
Wanrong Zhang, Wang Li-xin, Zhiguo Li, Cui Fu-xian, Jinsheng Luo, Sun Yinghua, Chen Jianxin, Shen Guang-di (2002). Reliability investigation of DC characteristics under emitter-base reverse-bias stress in single-mesa Si/SiGe/Si HBTs grown by molecular beam epitaxy (MBE). International Conference on Solid-State and Integrated Circuit Technology (ICSICT).DOI
Shi Chen, Zou Deshu, Chen Xu, Chen Jianxin, Niu Yun, Shen Guang-di (2002). High frequency AC equivalent circuit model of Si/SiGe HBTs. International Conference on Solid-State and Integrated Circuit Technology (ICSICT).DOI
Wanrong Zhang, LI Zhi-guo, Gao Yu-Zhen, Yaohai Cheng, Sun Ying-hua, Chen Jianxin, Shen Guang-di (2002). A comparative study of reliability of GaAs MESFETs with TiAl and TiPtAu gate at elevated temperature and high current density. International Conference on Microwave and Millimeter Wave Technology (ICMMT).DOI
Wanrong Zhang, Zhiguo Li, Fu-chen Mu, Sun Ying-hua, Yaohai Cheng, Jianxin Chen, Shen Guang-di (2001). Rapid evaluation degradation activation energy of n-GaAs ohmic contacts with and without TiN diffusion barrier layers. Solid-State Electronics.DOI
Shen Guang-di (2001). SiGe/Si HBT with a current gain of 26000 in the temperature of 77K. Semiconductor Technology.