屈新萍

2026

Fluorine Doping for Enhanced CMP Performance: Boosting Ce3+/Oxygen Vacancies in One-step Synthesized Ceria Abrasives

China Semiconductor Technology International Conference

DOI

2026

Homogeneous core-shell mesoporous ceria abrasives enabling high-efficiency and low-defect chemical mechanical polishing

Materials Science in Semiconductor Processing

DOI

2026

Controllable and Nanoscale Linear Etching of Atomic Layer Deposited Molybdenum Using Cyclic Stepwise CHF 3 /O 2 Plasma

Small

DOI

2026

Low Temperature Cu-Cu Direct Bonding Enabled by PVD-Deposited Co x N Passivation Layer

International Conference on Electronic Packaging Technology (ICEPT)

DOI

2026

Highly Selective Electroless-Deposited Co Passivation Layer with Boric Acid on Cu/SiO 2 Surfaces for Cu-Cu Bonding

ECS Journal of Solid State Science and Technology

DOI

2026

Low-temperature Cu-Cu bonding enabled by a simulated interface approach: process optimization and interfacial mechanisms of Ar plasma activation and glycine wet treatment

Materials Science in Semiconductor Processing

DOI

2025

三维集成铜-铜低温键合技术的研究进展

《电子与封装》

DOI

2025

Ligand Strategies for Regulating Atomically Precise CeO2 Nanoparticles: From Structure to Property

Molecules

DOI

2025

Mesoporous CeO2 Particle Abrasives with High Specific Surface Area for Enhanced Chemical Mechanical Polishing Performance

China Semiconductor Technology International Conference

DOI

2025

Low-Resistance Cu–Cu Bonding With the Formic Acid-Treated Co Passivation Layer

IEEE Transactions on Electron Devices

DOI

2025

Activity‐Tunable Ultrasmall Ceria Abrasive for Ultra‐Precision Chemical Mechanical Polishing of Semiconductor Dielectric Layers

Advanced Functional Materials

DOI

2025

Controllable Cyclic Wet Etching of Molybdenum at Room Temperature

ACS Applied Materials & Interfaces

DOI

2025

Ceria Polishing Abrasives with Enhanced Dispersion Stability Across Wide pH Range

DOI

2025

Polydopamine-coated cerium oxide core–shell nanoparticles for efficient and non-damaging chemical–mechanical polishing

Dalton Transactions

DOI

2025

Supramolecular surface modification of ceria nanoparticles for enhanced chemical mechanical planarization performance in shallow trench isolation

Dalton Transactions

DOI

2024

Novel Copper Filling Methods for 2 μm × 20 μm TSVs With an Electroless Deposited Co or Atomic Layer Deposited Ru Seed Layer

International Conference on Electronic Packaging Technology (ICEPT)

DOI

2024

Investigation of a Single-Component Additive for Bottom-Up Superfilling of the High-Aspect-Ratio TSV by Theoretical and Experimental Studies

The Journal of Physical Chemistry C

DOI

2024

Evaluation of Contact Resistance with the ‘L’ Kelvin Test Structure and the Modified Kelvin Test Structure

DOI

2024

Low contact resistance copper-copper bonding with selective electroless plating cobalt interlayer

IEEE International Interconnect Technology Conference (IITC)

DOI

2024

The investigation of Ar plasma treatment on the contact resistance between metal-metal by a simple metal bonding simulation approach

IEEE International Interconnect Technology Conference (IITC)

DOI

2024

Enhancement of electromigration performance of molybdenum nanowires by CoMo capping

IEEE International Interconnect Technology Conference (IITC)

DOI

2023

Comparison between the solid state reaction of ultrathin Ni and Ni/Ti with Si nanowire on silicon-on-insulator

Thin Solid Films

DOI

2023

The Effect of Surfactants on the Removal of Ceria Particles in the Buff Clean Process

ECS Journal of Solid State Science and Technology

DOI

2022

Electroless Deposition of Pure Co on TaN Substrate for Interconnect Metallization

Journal of The Electrochemical Society

DOI

2022

Wet processes deposition for HAR TSV metallization using electroless Co liner and alkaline Cu seed layer

IEEE International Interconnect Technology Conference (IITC)

DOI

2022

Cleaning Nanoceria Particles by Diluted HNO3 with H2O2 Mixture (NPM) Solution at Different Temperatures

ECS Journal of Solid State Science and Technology

DOI

2022

Low-temperature copper–copper quasi-direct bonding with cobalt passivation layer

AIP Advances

DOI

2022

Dual Active Layer Mg-Doped InZnO Thin-Film Transistors with Ultra-Low Indium Doping

IEEE International Conference on Solid-State & Integrated Circuit Technology (ICSICT)

DOI

2022

Investigation of RuZn alloy as barrier to Cu interconnect

Journal of Materials Science Materials in Electronics

DOI

2021

Electrodeposition of Cu on CoTa Barrier in the Alkaline CuSO 4 -Ethylenediamine Solution

Journal of The Electrochemical Society

DOI

2021

Linewidth related resistivities and growth behavior of nickel silicide nanowires by solid state reaction between Ni and electron-beam lithography prepared Si nanowires

Thin Solid Films

DOI

2021

Removal of Nanoceria Abrasive Particles by Using Diluted SC1 and Non-Ionic Surfactant

ECS Journal of Solid State Science and Technology

DOI

2020

Study of adhesion for Cu/Ru(Zn) on dielectrics by an improved four-point bending measurement

IEEE International Interconnect Technology Conference (IITC)

DOI

2020

Investigation of the anomalous hump phenomenon in amorphous InGaZnO thin-film transistors

Solid-State Electronics

DOI

2019

Investigation on inhibition of ruthenium corrosion by glycine in alkaline sodium hypochlorite based solution

Applied Surface Science

DOI

2019

Effect of thickness scaling on the permeability and thermal stability of Ta(N) diffusion barrier

Applied Surface Science

DOI

2019

Improved contact resistivity and enhanced mobility of metal-graphene FET by inserting ultra-thin MoOx layer at source/drain region

AIP Advances

DOI

2019

Characterization of 1, 2, 4-Triazole as Corrosion Inhibitor for Chemical Mechanical Polishing of Cobalt in H2O2Based Acid Slurry

ECS Journal of Solid State Science and Technology

DOI

2019

Role of Post-Deposition Annealing of Sputtered Ti on Fermi Level Depinning in Ti/TiOx/n-Ge

ECS Journal of Solid State Science and Technology

DOI

2018

A non-destructive, fast evaluation of PVD diffusion barriers deposited on porous low-k dielectrics

Microelectronic Engineering

DOI

2018

Two-step degradation of a-InGaZnO thin film transistors under DC bias stress

Solid-State Electronics

DOI

2018

Voidless metal filling and elimination of metal diffusion in PVD barrier and seed process for high performance Cu interconnect

IEEE International Conference on Solid-State and Integrated Circuit Technology

DOI

2018

Chemical Mechanical Polishing of Molybdenum in Potassium Iodate-Based Acidic Slurries

ECS Journal of Solid State Science and Technology

DOI

2017

Inhibition effect of glycine on molybdenum corrosion during CMP in alkaline H2O2 based abrasive free slurry

Applied Surface Science

DOI

2017

Study of CoTa alloy as barrier layer for Cu/low- k interconnects

Journal of Physics D Applied Physics

DOI

2017

Chemical Mechanical Polishing of Mo Using H2O2as Oxidizer in Colloidal Silica Based Slurries

ECS Journal of Solid State Science and Technology

DOI

2016

Study of direct Cu electrodeposition on ultra-thin Mo for copper interconnect

Microelectronic Engineering

DOI

2016

Effect of CoxMoyas Single Barrier Layer on Properties of Directly Electroplated Copper Films

Journal of The Electrochemical Society

DOI

2016

Investigation of oxygen and argon plasma treatment on Mg-doped InZnO thin film transistors

Applied Physics A

DOI

2016

Improved contact properties of Metal/Graphene interface by inserting MoOx dielectric layer

IEEE International Conference on Solid-State and Integrated Circuit Technology

DOI

2015

Direct copper electrodeposition on novel CoMo diffusion barrier

IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference (IITC/MAM)

DOI

2014

Study of a single layer ultrathin CoMo film as a direct plateable adhesion/barrier layer for next generation interconnect

IEEE International Interconnect Technology Conference (IITC)

DOI

2013

Study of Schottky barrier height modulation for NiSi/Si contact with an antimony interlayer

Microelectronic Engineering

DOI

2013

Investigation of CH4, NH3, H2 and He plasma treatment on porous low-k films and its effects on resisting moisture absorption and ions penetration

Microelectronic Engineering

DOI

2013

Direct Copper Plating on Ultra-Thin Sputtered Cobalt Film in an Alkaline Bath

Journal of The Electrochemical Society

DOI

2013

Barrier and low k polish with a novel alkaline barrier slurry combining with FA/O chelating agent

IEEE International Conference on ASIC (ASICON)

DOI

2012

Mg-In-Zn-O肖特基源漏薄膜晶体管的性能研究

《固体电子学研究与进展》

2012

Cu互连Mo基新型扩散阻挡层的化学机械抛光

《半导体技术》

2012

Reflow discoloration formation on pure tin (Sn) surface finish

Microelectronics Reliability

DOI

2012

The Effect of Glycine and Benzotriazole on Corrosion and Polishing Properties of Cobalt in Acid Slurry

Journal of The Electrochemical Society

DOI

2012

Improved Removal Selectivity of Ruthenium and Copper by Glycine in Potassium Periodate (KIO4)-Based Slurry

Journal of The Electrochemical Society

DOI

2012

The thermal and electrical properties of CoMo alloys as copper adhesion/barrier layers

IEEE International Conference on Solid-State and Integrated Circuit Technology

DOI

2012

Effects of oxygen plasma etching and post-annealing on Pt Schottky contact on Mg-doped InZnO

IEEE International Conference on Solid-State and Integrated Circuit Technology

DOI

2012

Direct copper electrodeposition onto cobalt adhesion layer in alkaline bath

IEEE International Conference on Solid-State and Integrated Circuit Technology

DOI

2012

Germanium surface passivation and atomic layer deposition of high- k dielectrics—a tutorial review on Ge-based MOS capacitors

Semiconductor Science and Technology

DOI

2012

The Effect of H2O2 and 2-MT on the Chemical Mechanical Polishing of Cobalt Adhesion Layer in Acid Slurry

Electrochemical and Solid-State Letters

DOI

2011

Surface modification of porous low-k material by plasma treatment and its application on reducing the damage from sputtering and CMP process

IEEE International Interconnect Technology Conference (IITC)

DOI

2011

The Inhibition of Enhanced Cu Oxidation on Ruthenium∕Diffusion Barrier Layers for Cu Interconnects by Carbon Alloying into Ru

Journal of The Electrochemical Society

DOI

2011

TaN∕Ta as an Effective Diffusion Barrier for Direct Contact of Copper and NiSi

Electrochemical and Solid-State Letters

DOI

2011

Annealing induced hysteresis suppression for TiN/HfO2/GeON/p-Ge capacitor

Semiconductor Science and Technology

DOI

2011

High-Performance Ge MOS Capacitors by $\hbox{O}_{2}$ Plasma Passivation and $\hbox{O}_{2}$ Ambient Annealing

IEEE Electron Device Letters

DOI

2011

Density Functional Theory Study of Cu Adhesion on Rh, Ir, Pd, Ta, Mo, Ru, Co, and Os Surfaces

Japanese Journal of Applied Physics

DOI

2011

Thermal ALD of Cu via reduction of CuxO films for the advanced metallization in spintronic and ULSI interconnect systems

DOI

2011

Investigation of ultra-thin Al2O3 film as Cu diffusion barrier on low-k (k=2.5) dielectrics

IEEE International Interconnect Technology Conference (IITC)

DOI

2011

Characterization of thermal stability of Ni(SiGe)/n-SiGe contact formed by isothermal annealing

IEEE International Interconnect Technology Conference (IITC)

DOI

2011

Effective Electrical Passivation of Ge(100) for HfO2 Gate Dielectric Layers Using O2 Plasma

Electrochemical and Solid-State Letters

DOI

2011

Effective Schottky Barrier Height Modulation by an Ultrathin Passivation Layer of GeOxNy for Al∕n-Ge(100) Contact

Electrochemical and Solid-State Letters

DOI

2011

TiO2/HfO2 Bi-Layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-Based Metal-Oxide-Semiconductor Devices Using GeOxNy Passivation Layer

Electrochemical and Solid-State Letters

DOI

2010

ALD-grown seed layers for electrochemical copper deposition integrated with different diffusion barrier systems

Microelectronic Engineering

DOI

2010

TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition

Microelectronic Engineering

DOI

2010

Cu contact on NiSi/Si with thin Ru/TaN barrier

Microelectronic Engineering

DOI

2010

Annealing effect on the metal gate effective work function modulation for the Al/TiN/SiO2/p-Si structure

Microelectronic Engineering

DOI

2010

Sputtered Ru–Ti, Ru–N and Ru–Ti–N films as Cu diffusion barrier

Microelectronic Engineering

DOI

2010

The effect of sputtered W-based carbide diffusion barriers on the thermal stability and void formation in copper thin films

Microelectronic Engineering

DOI

2010

Improvement of Diffusion Barrier Performance of Ru Thin Film by Incorporating a WHfN Underlayer for Cu Metallization

Electrochemical and Solid-State Letters

DOI

2010

Investigation of Co/TaN bilayer as Cu diffusion barrier

IEEE International Conference on Solid-State and Integrated Circuit Technology

DOI

2010

Study of the sputtered Mo/TaN and Mo-Ta thin film as diffusion barrier for copper metallization

IEEE International Conference on Solid-State and Integrated Circuit Technology

DOI

2010

Work function modulation for TiN/Ta/TiN metal gate electrode

IEEE International Conference on Solid-State and Integrated Circuit Technology

DOI

2010

Thermal stability of ultrathin RuC film as Cu diffusion barrier

IEEE International Conference on Solid-State and Integrated Circuit Technology

DOI

2010

Ru/TaSiN with different Ta/Si atomic ratio as barrier for Cu contact on NiSi substrate

IEEE International Conference on Solid-State and Integrated Circuit Technology

DOI

2010

Inhibition of enhanced Cu oxidation on ruthenium

IEEE International Interconnect Technology Conference (IITC)

DOI

2010

Cu adhesion on tantalum and ruthenium surface: Density functional theory study

Journal of Applied Physics

DOI

2010

The effects of high work function electrodes on the electrical properties of solution processed ZnO thin film transistor

DOI

2010

Effect of annealing on the gate effective work-function modulation for the Al/TiN/SiO2/P-Si structure

DOI

2009

新型纳米压印光刻技术的研究和应用

《世界科学》

2009

Schottky barrier height lowering induced by CoSi2 nanostructure

Applied Physics A

DOI

2009

The effects of deposition temperature and ambient on the physical and electrical performance of DC-sputtered n-ZnO/p-Si heterojunction

Applied Physics A

DOI

2009

The effect of postannealing on the electrical properties of well-aligned n-ZnO nanorods/p-Si heterojunction

Journal of Applied Physics

DOI

2009

In situ and ex situ investigation on the annealing performance of the ZnO film grown by ion beam deposition

Journal of Materials Science Materials in Electronics

DOI

2009

Trilayer nanoimprint fabrication and simulation of the silicon nanowire sensor for gas detection

IEEE International Conference on Nano/Micro Engineered and Molecular Systems

DOI

2009

Patterned ZnO nanorods network transistor fabricated by low-temperature hydrothermal process

Microelectronic Engineering

DOI

2009

X-ray photoelectron spectroscopy study of NiSi formation on shallow junctions

Applied Surface Science

DOI

2009

Pt interlayer effects on Ni germanosilicide formation and contact properties

Applied Surface Science

DOI

2009

Ru thin film grown on TaN by plasma enhanced atomic layer deposition

Thin Solid Films

DOI

2008

The effect of pre-annealing of sputtered ZnO seed layers on growth of ZnO nanorods through a hydrothermal method

Applied Physics A

DOI

2008

Improvement of the crystallinity and optical properties of sol-gel ZnO thin film by a PVD ZnO buffer layer

International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

DOI

2008

Comparison of the Ru thin films grown on Si, TiN/Si and TaN/Si substrates by plasma enhanced atomic layer deposition

International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

DOI

2008

Design and fabrication of Bragg reflectors based on SU-8

International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

DOI

2008

Cu contact on NiSi/Si with a Ru/TaN barrier stack

International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

DOI

2008

Physical and optical properties of ZnO thin films grown by DC sputtering deposition

International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

DOI

2008

Development of novel SU-8 based nanoimprint lithography

International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

DOI

2008

Front cover [Extended abstracts 2008 international workshop on junction technology]

International Workshop on Junction Technology

DOI

2008

Erbium silicide formation and its contact properties on Si(100)

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

DOI

2008

Electrochemical capacitance-voltage characterization of plasma-doped ultra-shallow junctions

Frontiers of Electrical and Electronic Engineering in China

DOI

2008

Pre-doping effects on Ni fully silicided metal gate on SiO2 dielectric

Applied Surface Science

DOI

2008

Diffusion barrier properties of TaN films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma

Microelectronic Engineering

DOI

2008

Cu contact on NiSi substrate with a Ta/TaN barrier stack

Microelectronic Engineering

DOI

2008

Characterization of Ni/Ho and Ni/Er fully silicided metal gates on SiO2 gate dielectric

Microelectronic Engineering

DOI

2008

Study of Ni/Si(100) solid-state reaction with Y addition

Microelectronic Engineering

DOI

2008

Improvement of Er-silicide formation on Si(100) by W capping

Thin Solid Films

DOI

2008

Growth Kinetics and Crystallization Behavior of TiO[sub 2] Films Prepared by Plasma Enhanced Atomic Layer Deposition

Journal of The Electrochemical Society

DOI

2007

掺Pt对Si(100)上形成的NiSi薄膜应力的影响(英文)

Journal of Semiconductors

2007

LPCVD-SiGe薄膜的物理及电学特性

《微电子学》

2007

Atomic layer deposition of TiO2 from tetrakis-dimethyl-amido titanium or Ti isopropoxide precursors and H2O

Journal of Applied Physics

DOI

2007

Growth of pinhole-free ytterbium silicide film by solid-state reaction on Si(001) with a thin amorphous Si interlayer

Journal of Applied Physics

DOI

2007

Oxidation Suppression for YbSi2-X Formation and New Method to Extract Schottky Barrier Height by Admittance Measurement

International Workshop on Junction Technology

DOI

2007

Effect of Pretreatment of TaN Substrates on Atomic Layer Deposition Growth of Ru Thin Films

Chinese Physics Letters

DOI

2007

Schottky contact barrier height extraction by admittance measurement

Journal of Applied Physics

DOI

2007

Effect of erbium interlayer on nickel silicide formation on Si(100)

Applied Surface Science

DOI

2007

Yttrium silicide formation and its contact properties on Si(100)

Microelectronic Engineering

DOI

2007

Oxidation suppression in ytterbium silicidation by Ti∕TiN bicapping layer

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

DOI

2006

NiSi/Si界面的剖面透射电镜研究(英文)

Journal of Semiconductors

2006

Linear growth of Ni2Si thin film on n+/p junction at low temperature

Journal of materials research/Pratt's guide to venture capital sources

DOI

2006

Copper pulse plating on Ru/TaSiN barrier

International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

DOI

2006

Arsenic redistribution induced by low-temperature Ni silicidation at 450°C on shallow junctions

Journal of Electronic Materials

DOI

2006

Improved barrier properties of ultrathin Ru film with TaN interlayer for copper metallization

Applied Physics Letters

DOI

2006

ECV Profiling of Ultra-Shallow Junction Formed by Plasma Doping

International Workshop on Junction Technology

DOI

2006

ALD growth of Ru on RIE-pretreated TaN substrate

International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

DOI

2006

Comparison of Ru/Ta and Ru/TaN as Barrier Stack for Copper Metallization

MRS Proceedings

DOI

2006

A 3D pn junction structure for radiation energy conversion chip

International Workshop on Junction Technology

DOI

2006

Investigation of Ru/TaN on low dielectric constant material with k=2.7

International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

DOI

2006

Investigation of Ni reaction with amorphous SiGeC thin film

International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

DOI

2006

Growth of high-density Ru- and RuO2-composite nanodots on atomic-layer-deposited Al2O3 film

Applied Surface Science

DOI

2006

Superior thermal stability of Ta/TaN bi-layer structure for copper metallization

Applied Surface Science

DOI

2005

不同氮氩比制备的W-Si-N薄膜的阻挡特性研究

《固体电子学研究与进展》

2005

Electrical characterization of NiSi/Si interfaces formed by a single and a two-step rapid thermal silicidation

Semiconductor Science and Technology

DOI

2005

Voltage dependence of effective barrier height reduction in inhomogeneous Schottky diodes

Solid-State Electronics

DOI

2005

Ti-capping and heating ramp-rate effects on Ni-silicide film and interface

International Workshop on Junction Technology

DOI

2005

Investigation of Ni reaction with sputtered amorphous SiGe thin film on SiO2 substrate

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

DOI

2005

The properties of Ru on Ta-based barriers

Thin Solid Films

DOI

2005

Study of ultrathin vanadium nitride as diffusion barrier for copper interconnect

Microelectronic Engineering

DOI

2004

Ni诱导非晶SiGe薄膜结晶

Journal of Semiconductors

2004

钴镍与多晶锗硅的固相反应和肖特基接触特性

《半导体技术》

2004

Nickel silicidation on n and p-type junctions at 300°C

Applied Physics Letters

DOI

2004

The reaction characteristics of ultra-thin Ni films on undoped and doped Si (100)

Journal of Electronic Materials

DOI

2004

Dopant redistribution induced by Ni silicidation at 300°C

DOI

2004

I-V-T studies on ternary silicide Co/sub 1-x/Ni/sub x/Si/sub 2//n-Si Schottky contacts

DOI

2004

The inhomogeneity of Co/p-poly-Si/sub 0.84/Ge/sub 0.16/ Schottky contact

DOI

2004

Solid-phase reaction and Schottky contact properties of Co/n-poly-Si0.84Ge0.16/n-Si (100)

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

DOI

2004

Schottky barrier characteristics of ternary silicide Co1−xNixSi2 on n-Si(100) contacts formed by solid phase reaction of multilayer

Solid-State Electronics

DOI

2004

Schottky contact properties of Ni/n-poly-Si0.87Ge0.13/n-Si(100) heterostructure

Materials Letters

DOI

2004

Annealing process influence and dopant-silicide interaction in self-aligned NiSi technology

International Conference on Solid-State and Integrated Circuits Technology

DOI

2004

Reactively sputtered vanadium nitride as diffusion barrier for copper interconnect

International Conference on Solid-State and Integrated Circuits Technology

DOI

2004

Thermal stability, phase and interface uniformity of Ni-silicide formed by Ni–Si solid-state reaction

Thin Solid Films

DOI

2004

Effects of preannealing on the diffusion barrier properties for ultrathin W–Si–N thin film

Thin Solid Films

DOI

2003

Co/C/Si（100）结构固相外延生长CoSi2

Journal of Semiconductors

2003

Co/a-GeSi/Ti/Si多层薄膜固相反应外延生长CoSi2薄膜

《固体电子学研究与进展》

2003

超薄W-Si-N作为铜与硅之间的扩散阻挡层

Journal of Semiconductors

2003

Rectifying characteristics of sputter-deposited SiGe diodes

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

DOI

2003

Comment on “Schottky barrier rectifier with high current density using vanadium as barrier metal” [Appl. Phys. Lett., 79, 860 (2001)]

Applied Physics Letters

DOI

2003

Ni/Si solid phase reaction studied by temperature-dependent current-voltage technique

Journal of Applied Physics

DOI

2002

用弹道电子显微术研究 Co-Ti-Si系统的退火温度对 CoSi2/Si势垒不均匀性的影响（英文）

Journal of Semiconductors

2002

Ni/Pd/Si固相反应及NiSi热稳定性增强研究

Journal of Semiconductors

2002

Boron and phosphorous diffusion in ion-beam-sputtering deposited SiGe films

Materials Letters

DOI

2002

Formation and properties of ternary silicide (Co/sub x/Ni/sub 1-x/)Si/sub 2/ thin films

International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

DOI

2002

The effect of Pd addition on silicide formation for Ni/Pd bilayers on silicon

International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

DOI

2002

Surface and interface morphology of CoSi2 films formed by multilayer solid-state reaction

Materials Characterization

DOI

2002

Schottky Barrier Height Inhomogeneity of Ti/n-GaAs Contact Studied by the I - V - T Technique

Chinese Physics Letters

DOI

2002

Double threshold behaviour of I - V characteristics of CoSi 2 /Si Schottky contacts

Chinese Physics

DOI

2001

Pt层对Ni/Si(100)固相反应NiSi薄膜高温稳定性的增强效应

Journal of Semiconductors

2001

固相反应制备的多晶和外延 CoSi2/n-Si（111）接触的肖特基特性（英文）

Journal of Semiconductors

2001

SiOx调制的三元硅化物(Co1-xNix)Si2外延

Journal of Semiconductors

2001

SiOx mediated epitaxial ternary silicide (Co1-xNix) Si2

2000

用于自对准提升硅化物结构的Co/Si/Ti/Si及Co/Si/…Ti/Si多层薄膜固相反应研究

Journal of Semiconductors

2000

超薄外延CoSi2/n-Si的肖特基势垒接触特性

Journal of Semiconductors

2000

用弹道电子发射显微术研究超薄金属硅化物/硅肖特基接触

Journal of Semiconductors

1999

三元硅化物(CoxNil-x)Si2薄膜的制备及特性

《微细加工技术》

1998

硅衬底上异质外延生长硅化钴研究进展

《固体电子学研究与进展》

1998

Co/Si/Ti/Si（100）多层薄膜固相反应异质外延生长CoSi2薄膜

Journal of Semiconductors

1998

TiN覆盖层和Co/Ti/Si三元固相反应改善超薄CoSi2高温稳定性

Journal of Semiconductors

1998

Electromigration performance improvement of Al-Si-Cu/TiN/Ti/n+Si contact

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

DOI

2007

基于不同扩散阻挡层的籽晶铜上电镀孪晶铜初步研究

《2007年上海市电子电镀学术年会》

2025

Investigation of Ar plasma and glycine wet treatments for Low-Temperature Cu-Cu Bonding using a novel simulated bonding methodology

SSRN Electronic Journal

DOI