胡功伟｜三峡大学｜学者主页

2026

Electrically Tunable Piezotronic Transistor by Coupling Interface Polar Symmetry and Strain Gradient

Gongwei Hu, Xiaoming Dong, Yihan Zhang, Yong Chao, Menglu Li, Min Liu, Liqing Pan, Lijie Li, W Huang, Fobao Huang

Advanced Science

2026

High-Sensitivity and Fast-Response Piezotronic Pressure Sensors by Mechanical Stacking in Silicon Wafer

Gongwei Hu, Li Qiang Zeng, Yan Zhang, Yinlin Peng, Xiaoming Dong, Min Liu, Liqing Pan, Yong Chao, Lijie Li, Wei Huang, Fobao Huang

ACS Nano

DOI

2026

High-Performance (PEA) 2 PbI 4 /SnS 2 van der Waals Heterostructure Phototransistor with Gate-Tunable Breaking of the Responsivity–Speed Trade-Off

Fobao Huang, Yifan Sun, Junjun Hu, Chunxiao Liu, Hengle Zhou, Nanyu Chen, Tianlun Li, Yao Li, Gongwei Hu, Wei Huang

ACS Nano

DOI

2026

Polarization-Dimension Competition in Centrosymmetric Flexoelectronic Transistors

Gongwei Hu, Yi-Han Zhang, Xiao-Yu Lu, Yanshan Xiao, Junjun Hu, Chao Yong, Lijie Li, Wei Huang, Fobao Huang

Materials today physics

DOI

2026

Entangled bulk-interface piezotronic effect in polar heterojunction

Gongwei Hu, Yi-Han Zhang, Li-Hao Jiang, Yanshan Xiao, Junjun Hu, Lijie Li, Fobao Huang

Nano Reseach

DOI

2025

Two-Dimensional MoS 2 /SnS 2 Isotype van der Waals Heterojunction Photodetectors with Thickness-Dependent Gate-Tunable Rectification Reversal

Fobao Huang, Yujin Hu, Yiyao Sun, Jianghua Chen, Tianlun Li, Gongwei Hu, Wei Huang

ACS Photonics

DOI

2025

Engineering of topological tunneling transistors via quantum point contact

Gongwei Hu, Jiaqi Yang, Haozhen Chen, Min Liu, Shuaiwei Fan, Fobao Huang, Qiao Chen, Minjiang Dan

Physical Review Applied

DOI

2025

Lead-Based Perovskites Significantly Suppress Dark Currents toward High-Performance Multilayer SnS2/Perovskite Photodetectors

Fobao Huang, Chunxiao Liu, Qingyuan Yang, Yong Chao, Gongwei Hu, Wei Huang

ACS Nano

DOI

2025

Insight into the Effect of h-BN Modification on the Performance of MoS2 Phototransistors with van der Waals Contacts

Fobao Huang, Qingyuan Yang, Yiyao Sun, Jianghua Chen, Chunxiao Liu, Yong Chao, Yujin Hu, Gongwei Hu, Wei Huang

ACS Applied Nano Materials

DOI

2025

Piezotronic Effect Driven by Symmetry Breaking in Centrosymmetric Semiconductors

Fobao Huang, Yong Chao, Menglu Li, Min Liu, Gongwei Hu, Wei Huang

Nano Energy

DOI

2025

Tunable Sensitivity of Strain Sensor by Coupling Piezotronic and Tunneling Effects

Gongwei Hu, Yi-Han Zhang, Yong Chao, Fobao Huang, Menglu Li, Min Liu, Wei Huang

Nano Energy

DOI

2025

Geometry-controlled spin filtering in MoS2 nanoribbon junctions

Ye Jiang, Xin Xue, Wei Shi, Xiaoming Dong, Yinlin Peng, Gongwei Hu, Wei-Yang Wang, Min-Jiang Dan, Fobao Huang, Qiao Chen

Applied Physics Letters

DOI

2025

Piezotronic strain sensor with uniform and switchable sensitivity by conductivity transformation

Fobao Huang, Yong Chao, Qingyuan Yang, Min-Jiang Dan, Qiao Chen, Gongwei Hu, Wei Huang

Nano Energy

DOI

2025

Hybrid functionals evaluate the n-type defects in Nb, Mo and Pt doped α-Ga2O3

Jinyan Chang, Liu Yang, Gong-Wei Hu, Shuai-Wei Fan

Materials Science and Engineering: B

DOI

2025

Great reduction of the hole effective mass in wide bandgap semiconductors by highly mismatched alloying.

Sixin Kang, Shuai-Wei Fan, Gong-Wei Hu

Physical Chemistry, Chemical Physics - PCCP

DOI

2025

Wurtzite MgSe: a promising candidate with the excellent visual light transparence and p-type conductivity

Shuai-Wei Fan, Jinyan Chang, Liu Yang, Gong-Wei Hu

Journal of Materials Chemistry C

DOI

2025

Nonlinear Hall resistance and temperature-dependent behavior in Pt/RuO2 bilayer structures for high-precision temperature sensing applications

Jie Chen, Sixin Kang, Gao-Cheng Zhan, Shuhao Gu, Jing Jiang, Wentao Wang, Gong-Wei Hu, Yi-Man Liu, Min Liu, Li-Qing Pan

Applied Physics Express

DOI

2025

Geometry engineering of tunneling transistors in transition metal dichalcogenide nanoribbon heterojunctions

Ye Jiang, Min-Jiang Dan, Shuaiwei Fan, Gong-Wei Hu, Fobao Huang, Wei-Yang Wang, Qiao Chen

Communications Physics

DOI

2025

Shallowing the p-type defects in LiGaO2 by valence band engineering via lower electronegativity alloying

Sixin Kang, Shuai-Wei Fan, Liu Yang, Gong-Wei Hu

Applied Materials Today

DOI

2024

Organic–Inorganic Hybrid Perovskite Photosensitive Field‐Effect Transistor Enabled by Poly(3‐Hexylthiophene‐2,5‐Diyl) Channel Layer

Fobao Huang, Qingyuan Yang, Yiluo Ding, Chunxiao Liu, Yong Chao, Gongwei Hu, Wei Huang

Advanced Optical Materials

DOI

2024

Understanding the role of Niobium, Molybdenum and Tungsten in realizing of the transparent n-type SnO2

Jiayuan Wang, Sixin Kang, Yu Chen, Gongwei Hu, Shuaiwei Fan

Journal of Physics Condensed Matter

DOI

2024

Performance Improvement of Formamidinium‐Based Perovskite Photodetector by Solution‐Processed C8‐BTBT Modification

Fobao Huang, Yiluo Ding, Chunxiao Liu, Gongwei Hu, Sergey Makarov, Dongwei Zhang, Yucheng Wang, Wei Huang

Advanced Optical Materials

DOI

2024

A switchable high-sensitivity strain sensor based on piezotronic resonant tunneling junctions

Gongwei Hu, Li Zeng, Fobao Huang, Shuai-Wei Fan, Qiao Chen, Wei Huang

Nano Reseach

DOI

2023

Spin polarization in quantum point contact based on wurtzite topological quantum well.

Xin Xue, Fobao Huang, Gongwei Hu

Physical Chemistry, Chemical Physics - PCCP

DOI

2023

Layer Engineering Piezotronic Effect in Two-Dimensional Homojunction Transistors

Gongwei Hu, Fobao Huang, Wei Huang

Nano Energy

DOI

2023

Piezoelectric manipulation of spin-orbit coupling in a Wurtzite heterostructure.

Gongwei Hu, Fo-Bao Huang, Jun-Feng Liu

Physical Chemistry, Chemical Physics - PCCP

DOI

2023

Ultrasensitive Strain Sensor Based on a Tunnel Junction with an <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mrow><mml:mi>Al</mml:mi><mml:mi mathvariant="normal">N</mml:mi></mml:mrow><mml:mo>/</mml:mo><mml:mrow><mml:mi>Ga</mml:mi><mml:mi mathvaria

Gongwei Hu, Fo-Bao Huang, Jun-feng Liu

Physical Review Applied

DOI

2022

Effect of strain-induced polarization field on band structure of MoS2 nanoribbon

Min-Jiang Dan, Gongwei Hu, Nian Liu, Yan Zhang

Journal of Physics, Conference Series

DOI

2022

Piezo-phototronic spin laser based on wurtzite quantum wells

Changmin Xie, Min-Jiang Dan, Gongwei Hu, Nian Liu, Yan Zhang

Nano Energy

DOI

2022

Piezo-phototronic Intersubband Terahertz Devices Based on Layer-dependent van der Waals Quantum Well

Nian Liu, Min-Jiang Dan, Gongwei Hu, Yan Zhang

Nano Energy

DOI

2021

极化电场调控低维压电半导体自旋特性的研究

胡功伟

《电子科技大学》

2021

Polarization-induced ultrahigh Rashba spin-orbit interaction in ZnO/CdO quantum well

Mandun Fu, Min-Jiang Dan, Gongwei Hu, Lijie Li, Yan Zhang

DOI

2021

Polarization Field on Edge States of Single-layered MoS2

Gongwei Hu, Min-Jiang Dan, Yan Zhang

DOI

2021

Edge-state transport in circular quantum point contact quantum piezotronic transistors

Yuankai Zhou, Yun‐Zhen Jiang, Min-Jiang Dan, Gongwei Hu, Lijie Li, Yan Zhang

Nano Energy

DOI

2021

High-Performance Piezo-Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well.

Min-Jiang Dan, Gongwei Hu, Jiaheng Nie, Lijie Li, Yan Zhang

Small

DOI

2020

Polarization-Driven Edge-State Transport in Transition-Metal Dichalcogenides

Ke Wang, Gongwei Hu, Ruhao Liu, Yaming Zhang, Min-Jiang Dan, Lijie Li, Yan Zhang

Physical Review Applied

DOI

2020

Piezotronic spin and valley transistors based on monolayer MoS2

Ruhao Liu, Gongwei Hu, Min-Jiang Dan, Yaming Zhang, Lijie Li, Yan Zhang

DOI

2020

High-performance piezo-phototronic multijunction solar cells based on single-type two-dimensional materials

G. Michael, Ya-Ming Zhang, Jiaheng Nie, Dong-Qi Zheng, Gongwei Hu, Ruhao Liu, Min-Jiang Dan, Lijie Li, Yan Zhang

DOI

2020

Quantum piezotronic devices based on ZnO/CdO quantum well topological insulator

Gongwei Hu, Yan Zhang

DOI

2020

Dynamical charge transfer model for high surface charge density triboelectric nanogenerators

Xin Cui, Yaming Zhang, Gongwei Hu, Lu Zhang, Yan Zhang

DOI

2019

Two-dimensional electron gas in piezotronic devices

Gongwei Hu, Lijie Li, Yan Zhang

Nano Energy

DOI

2019

Piezo-phototronic solar cell based on 2D monochalcogenides materials

G. Michael, Gongwei Hu, Dong-Qi Zheng, Yan Zhang

Journal of Physics D: Applied Physics

DOI

2019

Piezo-phototronic effect on quantum well terahertz photodetector for continuously modulating wavelength

Nian Liu, Gongwei Hu, Min-Jiang Dan, Ruhao Liu, Yaming Zhang, Lijie Li, Yan Zhang

Nano Energy

DOI

2019

High performance piezotronic devices based on non-uniform strain

Yaming Zhang, Gongwei Hu, Yan Zhang, Lucy Li, M. Willatzen, Zhong-Long Wang

Nano Energy

DOI

2019

Quantum information memory based on reconfigurable topological insulators by piezotronic effect

Xin Guo, Gongwei Hu, Yaming Zhang, Ruhao Liu, Min-Jiang Dan, Lijie Li, Yan Zhang

Nano Energy

DOI

2018

High performance piezotronic logic nanodevices based on GaN/InN/GaN topological insulator

Min-Jiang Dan, Gongwei Hu, Lijie Li, Yan Zhang

Nano Energy

DOI

2018

Ultra-high sensitivity strain sensor based on piezotronic bipolar transistor

Ping Zhu, Zi-Ming Zhao, Jiaheng Nie, Gongwei Hu, Lijie Li, Yan Zhang

Nano Energy

DOI

2018

Piezotronic analog-to-digital converters based on strain-gated transistors

Jiaheng Nie, Gongwei Hu, Lijie Li, Yan Zhang

DOI

2017

Piezotronic Transistor Based on Topological Insulators.

Gongwei Hu, Yan Zhang, Lijie Li, Zhong-Lin Wang

ACS Nano

DOI

2015

Piezotronic transistors in nonlinear circuit: Model and simulation

Gongwei Hu, Yu-Jing Zhang, Lu Luo, Yang Yang, Yan Zhang, Zhong-Long Wang

Science China Technological Sciences

DOI

个人简介

精选作品

期刊论文

Electrically Tunable Piezotronic Transistor by Coupling Interface Polar Symmetry and Strain Gradient

High-Sensitivity and Fast-Response Piezotronic Pressure Sensors by Mechanical Stacking in Silicon Wafer

High-Performance (PEA) 2 PbI 4 /SnS 2 van der Waals Heterostructure Phototransistor with Gate-Tunable Breaking of the Responsivity–Speed Trade-Off

Polarization-Dimension Competition in Centrosymmetric Flexoelectronic Transistors

Entangled bulk-interface piezotronic effect in polar heterojunction

Two-Dimensional MoS 2 /SnS 2 Isotype van der Waals Heterojunction Photodetectors with Thickness-Dependent Gate-Tunable Rectification Reversal

Engineering of topological tunneling transistors via quantum point contact

Lead-Based Perovskites Significantly Suppress Dark Currents toward High-Performance Multilayer SnS2/Perovskite Photodetectors

Insight into the Effect of h-BN Modification on the Performance of MoS2 Phototransistors with van der Waals Contacts

Piezotronic Effect Driven by Symmetry Breaking in Centrosymmetric Semiconductors

Tunable Sensitivity of Strain Sensor by Coupling Piezotronic and Tunneling Effects

Geometry-controlled spin filtering in MoS2 nanoribbon junctions

Piezotronic strain sensor with uniform and switchable sensitivity by conductivity transformation

Hybrid functionals evaluate the n-type defects in Nb, Mo and Pt doped α-Ga2O3

Great reduction of the hole effective mass in wide bandgap semiconductors by highly mismatched alloying.

Wurtzite MgSe: a promising candidate with the excellent visual light transparence and p-type conductivity

Nonlinear Hall resistance and temperature-dependent behavior in Pt/RuO2 bilayer structures for high-precision temperature sensing applications

Geometry engineering of tunneling transistors in transition metal dichalcogenide nanoribbon heterojunctions

Shallowing the p-type defects in LiGaO2 by valence band engineering via lower electronegativity alloying

Organic–Inorganic Hybrid Perovskite Photosensitive Field‐Effect Transistor Enabled by Poly(3‐Hexylthiophene‐2,5‐Diyl) Channel Layer

Understanding the role of Niobium, Molybdenum and Tungsten in realizing of the transparent n-type SnO2

Performance Improvement of Formamidinium‐Based Perovskite Photodetector by Solution‐Processed C8‐BTBT Modification

A switchable high-sensitivity strain sensor based on piezotronic resonant tunneling junctions

Spin polarization in quantum point contact based on wurtzite topological quantum well.

Layer Engineering Piezotronic Effect in Two-Dimensional Homojunction Transistors

Piezoelectric manipulation of spin-orbit coupling in a Wurtzite heterostructure.

Ultrasensitive Strain Sensor Based on a Tunnel Junction with an <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mrow><mml:mi>Al</mml:mi><mml:mi mathvariant="normal">N</mml:mi></mml:mrow><mml:mo>/</mml:mo><mml:mrow><mml:mi>Ga</mml:mi><mml:mi mathvaria

Effect of strain-induced polarization field on band structure of MoS2 nanoribbon

Piezo-phototronic spin laser based on wurtzite quantum wells

Piezo-phototronic Intersubband Terahertz Devices Based on Layer-dependent van der Waals Quantum Well

极化电场调控低维压电半导体自旋特性的研究

Polarization-induced ultrahigh Rashba spin-orbit interaction in ZnO/CdO quantum well

Polarization Field on Edge States of Single-layered MoS2

Edge-state transport in circular quantum point contact quantum piezotronic transistors

High-Performance Piezo-Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well.

Polarization-Driven Edge-State Transport in Transition-Metal Dichalcogenides

Piezotronic spin and valley transistors based on monolayer MoS2

High-performance piezo-phototronic multijunction solar cells based on single-type two-dimensional materials

Quantum piezotronic devices based on ZnO/CdO quantum well topological insulator

Dynamical charge transfer model for high surface charge density triboelectric nanogenerators

Two-dimensional electron gas in piezotronic devices

Piezo-phototronic solar cell based on 2D monochalcogenides materials

Piezo-phototronic effect on quantum well terahertz photodetector for continuously modulating wavelength

High performance piezotronic devices based on non-uniform strain

Quantum information memory based on reconfigurable topological insulators by piezotronic effect

High performance piezotronic logic nanodevices based on GaN/InN/GaN topological insulator

Ultra-high sensitivity strain sensor based on piezotronic bipolar transistor

Piezotronic analog-to-digital converters based on strain-gated transistors

Piezotronic Transistor Based on Topological Insulators.

Piezotronic transistors in nonlinear circuit: Model and simulation

研究方向