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Mingyu Liu, Bingkaï Liu, Lin Wen, Yihao Cui, Zitao Zhao, Qi Guo, Yudong Li (2026). Proton-Induced Displacement Damage and Kr Ion-Induced Single Event Transients in TDI CMOS Image Sensors. IEEE Transactions on Device and Materials Reliability.DOI
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Yongheng Luo, Dan Zhang, Lin Wen, Jiyang Shang, Tao Yuan, Bin Wang, Dong Zhou, Qi Guo, Yudong Li (2025). Mechanism of Gamma-Ray Irradiation Effects on the Transient Characteristics of Photoconductive Semiconductor Switches. IEEE Transactions on Nuclear Science.DOI
Jun Sun, Xingyao Zhang, Mengjun Sun, Gang Yu, Yiyuan Wang, Lin Wen, Xuefeng Yu, Qi Guo, Yudong Li (2025). Ionizing radiation damage and accuracy degradation in PMOS dosimeter constant current sources under bias-dose rate coupling. Microelectronics Reliability.DOI
Dan Zhang, Yudong Li, Haonan Feng, Xiaowen Liang, Chengcheng Shi, Yu Jun Song, Ying Wei, Dong Xiang Zhou, Jingyi Xu, Yongheng Luo, Jie Feng, Xue‐Feng Yu, Qi Guo, Teng Zhang, Bo Wang (2025). The dynamic and static radiation damage of silicon carbide MOSFETs with different gate oxide thickness. Microelectronics Reliability.DOI
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Jiangwei Cui, Qiwen Zheng, Yaqing Chi, Bin Liang, Xiaolong Li, Yang Guo, Qi Guo, Yudong Li (2025). Interaction of Total Ionizing Dose Effect and Hot Carrier Degradation in Bulk I/O-FinFETs. IEEE Transactions on Electron Devices.DOI
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Mingzhu Xun, Yudong Li, Jie Feng, Chengfa He, Mingyu Liu, Qi Guo (2024). Effect of Proton Irradiation on Complementary Metal Oxide Semiconductor (CMOS) Single-Photon Avalanche Diodes. Electronics.DOI
Shiping Xu, Jiangwei Cui, Qiwen Zheng, Xiaolong Li, Gang Liu, Kangwei Xing, Gang Yu, Mingzhu Xun, Yudong Li, Qi Guo (2024). Impact of gate bias on TID responses of BCD MOSFETs. Radiation effects and defects in solids.DOI
Zitao Zhao, Lin Wen, Yudong Li, Jie Feng, Bingkaï Liu, Qi Guo (2024). Total ionization dose and electromagnetic pulse synergistic effects on low dropout linear regulator. AIP Advances.DOI
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Zitao Zhao, Lin Wen, Yudong Li, Bingkaï Liu, Jie Feng, Zhikang Yang, Yihao Cui, Qi Guo (2024). Mechanisms of Dark Current Increase and Pixel Anomalies Induced by 2-GeV Ta-Irradiation in 8T-CMOS Image Sensors. IEEE Transactions on Nuclear Science.DOI
Yihao Cui, Jie Feng, Yudong Li, Lin Wen, Bingkaï Liu, Zhi-Kang Yang, Qi Guo (2024). Proton single event effects on 8T global exposure CMOS image sensors. Radiation effects and defects in solids.DOI
Ruiqin Zhang, Jiangwei Cui, Yudong Li, Qi Guo, Qiwen Zheng (2024). Total Ionizing Dose Effects on 22 nm UTBB FD-SOI MOSFETs up to 100 Mrad(Si). IEEE Transactions on Electron Devices.DOI
Zhikang Yang, Lin Wen, Yudong Li, Dong Zhou, Xin Wang, Rui Ding, Meiqing Zhong, Cui Meng, Wenxiao Fang, Qi Guo (2024). Analysis of the Interference Effects in CMOS Image Sensors Caused by Strong Electromagnetic Pulses. Journal of electromagnetic engineering and science.DOI
Mingzhu Xun, Yudong Li, Mingyu Liu, Qi Guo (2024). Study on γ-irradiation effect of silicon single photon avalanche diodes. Advanced Fiber Laser Conference (AFL).DOI
Yi Jiang, Lin Wen, Jie Feng, Zitao Zhao, Zhikang Yang, Changsong Shi, Rui Li, Yudong Li, Dong Zhou, Qi Guo (2024). Research on proton displacement damage effects in charge-domain accumulation type TDI CMOS image sensors. Radiation effects and defects in solids.DOI
Qiwen Zheng, Jiangwei Cui, Yudong Li, Qi Guo (2024). Impact of TID Irradiation on Static Noise Margin of 22 nm UTBB FD-SOI 6-T SRAM Cells. IEEE Transactions on Nuclear Science.DOI
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Qi Guo, Mingjiang Zhang, Zhi Tong, Shanshan Zhao, Yajie Zhou, Yaxin Wang, Shan Jin, Jie Zhang, Hong-Bin Yao, Man-Zhou Zhu, Taotao Zhuang (2023). Multimodal-Responsive Circularly Polarized Luminescence Security Materials. Journal of the American Chemical Society.DOI
Rui Li, Yudong Li, Maliya Heini, Ruiqin Zhang, Xin Wang, Yi Fan Jiang, Dong Zhou, Qi Guo (2023). Study of displacement damage effects in InGaAs PIN photodiode under 10 MeV proton irradiation. AIP Advances.DOI
Yutang Xiang, Xiaowen Liang, Jie Feng, Haonan Feng, Dan Zhang, Ying Wei, Xue‐Feng Yu, Qi Guo (2023). Refined Analysis of Leakage Current in SiC Power Metal Oxide Semiconductor Field Effect Transistors after Heavy Ion Irradiation. Electronics.DOI
Xuewen Wei, Jiangwei Cui, Deng Luo, Gang Yu, Yudong Li, Qi Guo, Qiwen Zheng (2023). Enhanced Total Ionizing Dose Response of 16 nm n-FinFETs With a Single Fin. IEEE Electron Device Letters.DOI
Mingyu Liu, Chengfa He, Jie Feng, Mingzhu Xun, Jing Sun, Yudong Li, Qi Guo (2023). Analysis of Difference in Areal Density Aluminum Equivalent Method in Ionizing Total Dose Shielding Analysis of Semiconductor Devices. Electronics.DOI
Qiang Jiao, Fupin Liu, Erming Rui, Bin Wang, Zhiwen Tian, Dong Zhou, Dan Zhang, Qi Guo (2023). Research Progress on the Cumulative Radiation Effect of InGaAs Infrared Detectors. International Conference on Reliability, Maintainability and Safety.DOI
Mohan Liu, Wu Lu, Chengfa He, Qi Guo (2023). Characterizing the Radiation Degradation of Metal Can Packaged Bipolar Transistor*. International Conference on Electronic Packaging Technology (ICEPT).DOI
Haonan Feng, Xiaowen Liang, Jing Sun, Jie Feng, Ying Wei, Teng Zhang, Xiaojuan Pu, Dan Zhang, Yutang Xiang, Yudong Li, Xue‐Feng Yu, Qi Guo (2023). Total ionizing dose effects of 60 Co-γ ray radiation on SiC MOSFETs with different gate oxide thickness. Radiation effects and defects in solids.DOI
Haonan Feng, Xiaowen Liang, Xiaojuan Pu, Shengmao Yang, Jie Feng, Ying Wei, Yutang Xiang, Jing Sun, Dan Zhang, Yudong Li, Qingkui Yu, Xue‐Feng Yu, Qi Guo (2023). Special Degradation Effects of 60Co γ-Rays Irradiation on Electrical Parameters of SiC MOSFETs. IEEE Transactions on Nuclear Science.DOI
Bingkaï Liu, Yudong Li, Lin Wen, Xiang Zhang, Qi Guo (2023). Effects of Hot Pixels on Pixel Performance on Backside Illuminated Complementary Metal Oxide Semiconductor (CMOS) Image Sensors. Sensors.DOI
Jie Feng, Haichuan Wang, Kun-Fang Li, Yudong Li, Lin Wen, Qi Guo (2023). Impact of γ Irradiation Damage to CMOS Image Sensor on Camera Signal-To-Noise Ratio. Journal of Nanoelectronics and Optoelectronics.DOI
Xiaowen Liang, Haonan Feng, Yutang Xiang, Jing Sun, Ying Wei, Dan Zhang, Yudong Li, Jie Feng, Xue‐Feng Yu, Qi Guo (2023). Oxide Electric Field-Induced Degradation of SiC MOSFET for Heavy-Ion Irradiation. Electronics.DOI
Zhikang Yang, Lin Wen, Yudong Li, Jie Feng, Dong Zhou, Bingkaï Liu, Zitao Zhao, Qi Guo (2023). Heavy Ion Single Event Effects in CMOS Image Sensors: SET and SEU. Electronics.DOI
Haonan Feng, Xiaowen Liang, Xiaojuan Pu, Yutang Xiang, Teng Zhang, Ying Wei, Jie Feng, Jing Sun, Dan Zhang, Yudong Li, Xue‐Feng Yu, Qi Guo (2023). Total Ionizing Dose Effects of 60Co γ-Ray Radiation on Split-Gate SiC MOSFETs. Electronics.DOI
Yihao Cui, Jie Feng, Yudong Li, Lin Wen, Qi Guo (2023). Proton Radiation Effects of CMOS Image Sensors on Different Star Map Recognition Algorithms for Star Sensors. Electronics.DOI
Xiao Li, Jiangwei Cui, Qiwen Zheng, Pengwei Li, Xu Cui, Yudong Li, Qi Guo (2023). Study of the Within-Batch TID Response Variability on Silicon-Based VDMOS Devices. Electronics.DOI
Lin Wen, Zitao Zhao, Dong Zhou, Yudong Li, Yudong Li, Jie Feng, Qi Guo (2023). Study on the mechanism of temperature effect on proton irradiated charge-coupled device. Radiation effects and defects in solids.DOI
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Xu Cui, Jiangwei Cui, Qiwen Zheng, Ying Wei, Yudong Li, Qi Guo (2022). Bias dependence of total ionizing dose effects in 22 nm bulk nFinFETs. Radiation effects and defects in solids.DOI
Qiwen Zheng, Jiangwei Cui, Xue‐Feng Yu, Yudong Li, Qi Guo (2022). Anneal Behavior of Total Ionizing Dose Irradiated UTBB FD-SOI n-MOSFETs Activated by Hot Carrier Stress. IEEE Transactions on Nuclear Science.DOI
Ruiqin Zhang, Qiwen Zheng, Jiangwei Cui, Yudong Li, Xue‐Feng Yu, Wu Lu, Qi Guo (2022). Bias Dependence of Total Ionizing Dose Response in UTBB FD-SOI Transistors. IEEE Transactions on Nuclear Science.DOI
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Xiaolong Li, Xin Wang, Zhikuan Wang, Kunfeng Zhu, Guohua Shui, Tao Lin, Qiwen Zheng, Yang Yong-hui, Yudong Li, Wu Lu, Qi Guo (2022). Characterization of Radiation Tolerance of Bipolar Transistor with Al2O3 Dielectric at Different Dose Rates. European Conference on Radiation and Its Effects on Components and Systems.DOI
Jiawei Chen, Yudong Li, Heini Maliya, Qi Guo, Dong Zhou, Lin Wen (2022). Annealing effects of 850 nm vertical-cavity surface-emitting lasers after proton irradiation. Heliyon.DOI
Xiaowen Liang, Feng Haonan, Pu Xiaojuan, Cui Jiangwei, Sun Jing, Ying Wei, Zhang Dan, Yu Xuefeng, Qi Guo (2022). Study of heavy ion induced single event gate rupture effect in SiC MOSFETs. Japanese Journal of Applied Physics.DOI
Jing Fu, Jie Feng, Yudong Li, Lin Wen, Dong Zhou, Qi Guo (2022). Effect of proton beam irradiation on the tracking efficiency of CMOS image sensors. Radiation effects and defects in solids.DOI
Xiaowen Liang, Jiangwei Cui, Jing Sun, Haonan Feng, Dan Zhang, Xiaojuan Pu, Xue‐Feng Yu, Qi Guo (2022). The Influence of 10 MeV Proton Irradiation on Silicon Carbide Power Metal-Oxide-Semiconductor Field-Effect Transistor. Journal of Nanoelectronics and Optoelectronics.DOI
Xiaojuan Pu, Ying Wei, Xiaolong Li, Haonan Feng, Xiaowen Liang, Jie Feng, Jing Sun, Xue‐Feng Yu, Qi Guo (2022). Study on Total Ionizing Dose Effect of Silicon Carbide Metal Oxide Semiconductor Field-Effect Transistors at High and Low Dose Rates. Journal of Nanoelectronics and Optoelectronics.DOI
Jiangwei Cui, Qiwen Zheng, Yudong Li, Qi Guo (2022). Impact of High TID Irradiation on Stability of 65 nm SRAM Cells. IEEE Transactions on Nuclear Science.DOI
Jiayi Zou, Yu-Dong LI, Zhi-Hui Shen, Lin Wen, Dong Zhou, Qi Guo (2022). Total Ionizing Dose Effects on Solar-Blind Ultraviolet Focal Plane Arrays. Journal of Nanoelectronics and Optoelectronics.DOI
Ping Wu, Lin Wen, Zhiqian Xu, Yunsheng Jiang, Qi Guo, Cui Meng (2022). Synergistic effects of total ionizing dose and radiated electromagnetic interference on analog-to-digital converter. Nuclear Science and Techniques.DOI
Jing Fu, Lin Wen, Jie Feng, Ying Wei, Dong Zhou, Yudong Li, Qi Guo (2022). Quantum Efficiency Simulation and Analysis of Irradiated Complementary Metal-Oxide Semiconductor Image Sensors. Journal of Nanoelectronics and Optoelectronics.DOI
Jiawei Chen, Yudong Li, Heini Maliya, Bingkaï Liu, Qi Guo, Xiaotang Ren, Chengfa He (2021). Displacement damage effects in proton irradiated vertical-cavity surface-emitting lasers. Japanese Journal of Applied Physics.DOI
Ruiqin Zhang, Qiwen Zheng, Wu Lu, Jiangwei Cui, Yudong Li, Qi Guo (2021). 1/f Noise responses of Ultra-Thin Body and Buried oxide FD-SOI PMOSFETs under total ionizing dose irradiation. Radiation effects and defects in solids.DOI
Xiaowen Liang, Jinghao Zhao, Qiwen Zheng, Jiangwei Cui, Sheng Yang, Baoshun Wang, Dan Zhang, Xue‐Feng Yu, Qi Guo (2021). Impact of heavy-ion irradiation on gate oxide reliability of silicon carbide power MOSFET. Radiation effects and defects in solids.DOI
Bingkaï Liu, Yudong Li, Lin Wen, Jinghao Zhao, Dong Zhou, Jie Feng, Qi Guo (2021). Displacement Damage Effects in Backside Illuminated CMOS Image Sensors. IEEE Transactions on Electron Devices.DOI
Qiwen Zheng, Jiangwei Cui, Xue‐Feng Yu, Yudong Li, Wu Lu, Chengfa He, Qi Guo (2021). Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology. IEEE Transactions on Nuclear Science.DOI
Haonan Feng, Sheng Yang, Xiaowen Liang, Dan Zhang, Xiaojuan Pu, Xu Cui, Haiyang Wang, Jing Sun, Xue‐Feng Yu, Qi Guo (2021). Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs. Journal of Nanoelectronics and Optoelectronics.DOI
Yu Xin, Lu Wu, Xiaolong Li, LIU Mohan, Xin Wang, Jing Sun, Qi Guo (2021). Total Ionizing Dose Effect and Failure Mechanism of Digital Signal Processor. Chinese Journal of Electronics.DOI
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Yudong Li, Bingkaï Liu, Lin Wen, Ying Wei, Dong Zhou, Jie Feng, Qi Guo (2021). Role of the oxide trapped charges in charge coupled device ionizing radiation-induced dark signal. Radiation Physics and Chemistry.DOI
Xingyao Zhang, Qi Guo, Dong Zhou, Yudong Li (2021). Total Ionizing Dose (TID) of Phase Change Random Access Memory. International Conference on Radiation Effects of Electronic Devices (ICREED).DOI
Qiwen Zheng, Jiangwei Cui, Xue‐Feng Yu, Yudong Li, Wu Lu, Chengfa He, Qi Guo (2021). Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers. IEEE Transactions on Nuclear Science.DOI
Chuanfeng Xiang, Shuai Yao, Wu Lu, Xiaolong Li, Xin Yu, Xin Wang, Mohan Liu, Jing Sun, Qi Guo (2021). Influence of enhanced low dose rate sensitivity on single-event transient degradation in the LM158 bipolar operational amplifier. AIP Advances.DOI
Jing Fu, Jie Feng, Yudong Li, Qi Guo, Ying Wei, Lin Wen, Dong Zhou, Xiang Zhang, Yulong Cai, Bingkaï Liu (2021). Effect of proton radiation on 8T CMOS image sensors for space applications. Radiation effects and defects in solids.DOI
Zhexuan Ren, Xia An, Gensong Li, Jingyi Liu, Mingzhu Xun, Qi Guo, Xing Zhang, Ru Huang (2021). TID Response and Radiation-Enhanced Hot-Carrier Degradation in 65-nm nMOSFETs: Concerns on the Layout-Dependent Effects. IEEE Transactions on Nuclear Science.DOI
Jing Fu, Jie Feng, Yudong Li, Qi Guo, Lin Wen, Dong Zhou, Xiang Zhang, Yulong Cai, Bingkaï Liu (2021). Degradation characteristics of γ-ray and proton irradiated 8T CMOS image sensors. Radiation Physics and Chemistry.DOI
Yu long Cai, Qi Guo, Lin Wen, Dong Zhou, Jie Feng, Bing kai Liu, Jing Fu, Yu Dong Li (2021). Single Event Effects in 0.18 μm Pinned Photodiode CMOS Image Sensors: SEU and SEFI. Microelectronics Reliability.DOI
Liu Bingkai, Yudong Li, Lin Wen, Dong Zhou, Feng Jie, Xiang Zhang, Cai Yulong, Fu Jing, Qi Guo (2021). Analysis of Dark Signal Degradation Caused by 1 MeV Neutron Irradiation on Backside‐Illuminated CMOS Image Sensors. Chinese Journal of Electronics.DOI
Baoshun Wang, Jiangwei Cui, Qi Guo, Qiwen Zheng, Ying Wei, Shanxue Xi (2020). The influence of total ionizing dose on the hot carrier injection of 22 nm bulk nFinFET. Journal of Semiconductors.DOI
Bingkaï Liu, Yudong Li, Lin Wen, Dong Zhou, Jie Feng, Xiang Zhang, Yulong Cai, Jing Fu, Qi Guo (2020). Investigation of random telegraph signal in CMOS image sensors irradiated by protons. Journal of Nuclear Science and Technology.DOI
Bingkaï Liu, Yudong Li, Lin Wen, Dong Zhou, Jie Feng, Xiang Zhang, Yulong Cai, Jing Fu, Jiawei Chen, Qi Guo (2020). Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors. Results in Physics.DOI
Momin Sailai, Qi Lei, Abuduwayiti Aierken, Maliya Heini, Xiao Fan Zhao, Rui Ting Hao, Jing Hui Mo, Jie Guo, Yu Zhuang, Qi Guo (2020). 1 meV electron irradiation and post-annealing effects of GaInAsN diluted nitride alloy with 1 eV bandgap energy. Thin Solid Films.DOI
Yulong Cai, Lin Wen, Yudong Li, Qi Guo, Dong Zhou, Jie Feng, Xiang Zhang, Bingkaï Liu, Jing Fu (2020). Single-Event Effects in Pinned Photodiode CMOS Image Sensors: SET and SEL. IEEE Transactions on Nuclear Science.DOI
Xiang Zhang, Yudong Li, Lin Wen, Jie Feng, Dong Zhou, Yulong Cai, Bingkaï Liu, Jing Fu, Qi Guo (2020). Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors. Journal of Nuclear Science and Technology.DOI
Jie Feng, Yudong Li, Qi Guo (2020). Research on attitude measurement precision of star sensor influenced by space radiation damage. Sixth Symposium on Novel Optoelectronic Detection Technology and Applications.DOI
Zhexuan Ren, Xia An, Gensong Li, Gong Chen, Ming Li, Gang Yu, Qi Guo, Xing Zhang, Ru Huang (2020). TID Response of Bulk Si PMOS FinFETs: Bias, Fin Width, and Orientation Dependence. IEEE Transactions on Nuclear Science.DOI
Xiaowen Liang, Jiangwei Cui, Qiwen Zheng, Jinghao Zhao, Xue‐Feng Yu, Jing Sun, Dan Zhang, Qi Guo (2020). Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET. Radiation effects and defects in solids.DOI
Bingkaï Liu, Yudong Li, Lin Wen, Dong Zhou, Jie Feng, Lindong Ma, Xiang Zhang, Yulong Cai, Zhiming Wang, Jing Fu, Qi Guo, Ding Ma (2020). A study of hot pixels induced by proton and neutron irradiations in charge coupled devices. Radiation effects and defects in solids.DOI
Shanxue Xi, Qiwen Zheng, Wu Lu, Jiangwei Cui, Ying Wei, Bao-Shun Wang, Qi Guo (2020). The influence of channel width on total ionizing dose responses of the 130 nm H-gate partially depleted SOI NMOSFETs. Radiation effects and defects in solids.DOI
Jinghao Zhao, Hang Zhou, Jiangwei Cui, Qiwen Zheng, Ying Wei, Shanxue Xi, Xue‐Feng Yu, Qi Guo (2019). Comprehensive study on hot carrier reliability of radiation hardened H-gate PD SOI NMOSFET after gamma radiation. Radiation effects and defects in solids.DOI
Ping Wu, Zhiqian Xu, Cui Meng, Lin Wen, Qi Guo (2019). The experiment study of effects on ADC chip against radiation and electromagnetic environment. International Workshop on the Electromagnetic Compatibility of Integrated Circuits (EMC Compo).DOI
Teng Ma, Xue‐Feng Yu, A. Paccagnella, Qi Guo (2019). Investigating the latent reliability degradation of partially depleted SOI devices induced by high-energy heavy ions irradiation. Microelectronics Reliability.DOI
Mohan Liu, Wu Lu, Xin Yu, Xin Wang, Xiaolong Li, Shuai Yao, Qi Guo (2019). Mechanism of Degradation Rate on the Irradiated Double-Polysilicon Self-Aligned Bipolar Transistor. Electronics.DOI
Dengkui Wang, Bingkun Chen, Zhipeng Wei, Xuan Fang, Jilong Tang, Dan Fang, Abuduwayiti Aierken, Xiaohua Wang, Maliya Heini, Qi Guo (2019). Electron irradiation-induced defects and photoelectric properties of Te-doped GaSb. Journal of Physics and Chemistry of Solids.DOI
Jinghao Zhao, Qiwen Zheng, Jiangwei Cui, Hang Zhou, Xiaowen Liang, Xue‐Feng Yu, Qi Guo (2019). A study on effects of total ionizing dose on hot carrier effect of PD I/O SOI PMOSFETs. Results in Physics.DOI
Shuai Yao, Wu Lu, Xin Yu, Qi Guo, Chengfa He, Xiaolong Li, Xin Wang, Mohan Liu, Jing Sun, Xinyu Wei, Yaodong Chang (2019). Using a Temperature-Switching Approach to Evaluate Low-Dose-Rate Ionizing Radiation Effects on SET in Linear Bipolar Circuits. IEEE Transactions on Nuclear Science.DOI
Qiwen Zheng, Jiangwei Cui, Liewei Xu, Bingxu Ning, Kai Zhao, Mingjie Shen, Xue‐Feng Yu, Wu Lu, Chengfa He, Ren Diyuan, Qi Guo (2019). Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors. IEEE Transactions on Nuclear Science.DOI
Yan Xu, Maliya Heini, Xiaobao Shen, Abuduwayiti Aierken, Xiaofan Zhao, Momin Sailai, Wu Lu, Ming Tan, Yuanyuan Wu, Shulong Lu, Yudong Li, Qi Guo (2019). Spectral and electrical properties of 3 MeV and 10 MeV proton irradiated InGaAsP single junction solar cell. Japanese Journal of Applied Physics.DOI
Xingyao Zhang, Qi Guo, Yudong Li, Lin Wen (2018). Total ionizing dose and synergistic effects of magnetoresistive random-access memory. Nuclear Science and Techniques.DOI
Jie Ming Feng, Lin Wen, Yudong Li, Chengfa He, Qi Guo (2018). Study the performance of star sensor influenced by space radiation damage of image sensor. International Conference on Radiation Effects of Electronic Devices (ICREED).DOI
Yulong Cai, Qi Guo, Yudong Li, Lin Wen, Dong Zhou, Jie Feng, Lindong Ma, Xiang Zhang, Tianhui Wang (2018). Heavy ion-induced single event effects in active pixel sensor array. Solid-State Electronics.DOI
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Shuai Yao, Wu Lu, Xin Yu, Xin Wang, Xiaolong Li, Mohan Liu, Jing Sun, Xinyu Wei, Yaodong Chang, Qi Guo, Chengfa He (2018). Synergistic effect of enhanced low-dose-rate sensitivity and single event transient in bipolar voltage comparator LM139. Journal of Nuclear Science and Technology.DOI
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Jinxin Zhang, Hongxia Guo, Xiaoyu Pan, Qi Guo, Feng-Qi Zhang, Juan Feng, Xin Wang, Wei Dong Yin, Xian-Xiang Wu (2018). Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor. Chinese Physics B.DOI
Lindong Ma, Yudong Li, Lin Wen, Jie Feng, Xiang Zhang, Tianhui Wang, Yulong Cai, Zhiming Wang, Qi Guo (2018). Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor. Chinese Physics B.DOI
Xin Yu, Wu Lu, Shuai Yao, Qi Guo, Jing Sun, Xin Wang, Mohan Liu, Xiaolong Li (2018). Simulation of Synergism Effect Using Temperature Switching Irradiation on Bipolar Comparator. Chinese Physics Letters.DOI
Xiang Zhang, Yudong Li, Lin Wen, Dong Zhou, Jie Feng, Lindong Ma, Tianhui Wang, Yu-Long Cai, Zhiming Wang, Qi Guo (2018). Radiation Effects Due to 3MeV Proton Irradiations on Back-Side Illuminated CMOS Image Sensors. Chinese Physics Letters.DOI
Xingyao Zhang, Yudong Li, Qi Guo, Bin Liao, Yang Shi, Zhongyue John Yang, Chengfa He (2018). Displacement damage effects and anneal characteristic on InP/InGaAs DHBTs. International Conference on Radiation Effects of Electronic Devices (ICREED).DOI
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Momin Sailai, Abuduwayiti Aierken, Maliya Heini, Xiaofan Zhao, Shen XiaoBao, Xu Yan, Liu HaiTao, Yudong Li, Qi Guo (2018). Effects of 1MeV electron irradiation on the photoluminescence of GaInNAs/GaAs single quantum well structure. International Conference on Radiation Effects of Electronic Devices (ICREED).DOI
Ling Yang, Qingzhu Zhang, Yunbo Huang, Zhongshan Zheng, Bo Li, Binhong Li, Xingyao Zhang, Huiping Zhu, Huaxiang Yin, Qi Guo, Jiajun Luo, Zhengsheng Han (2018). Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation. IEEE Transactions on Nuclear Science.DOI
Qiwen Zheng, Jiangwei Cui, Ying Wei, Xue‐Feng Yu, Wu Lu, Ren Diyuan, Qi Guo (2018). Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65nm NMOSFETs. Chinese Physics Letters.DOI
Jinxin Zhang, Qi Guo, Hongxia Guo, Wu Lu, Chaohui He, Xin Wang, Pei Li, Lin Wen (2018). Investigation of enhanced low dose rate sensitivity in SiGe HBTs by 60Co γ irradiation under different biases. Microelectronics Reliability.DOI
Qiwen Zheng, Jiangwei Cui, Wu Lu, Hongxia Guo, Jie Liu, Xue‐Feng Yu, Ying Wei, Liang Wang, Jiaqi Liu, Chengfa He, Qi Guo (2018). The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose. IEEE Transactions on Nuclear Science.DOI
Jie Feng, Xingyao Zhang, Yudong Li, Qi Guo (2018). Low energy proton irradiation effects on InP/InGaAs DHBTs and InP-base frequency dividers. Young Scientists Forum 2017.DOI
Maliya Heini, Dong Zhou, Abuduwayiti Aierken, Xiaofan Zhao, Qi Guo, Yudong Li, Liu Chaoming (2018). Changes of photoluminescence of electron beam irradiated self-assembled InAs/GaAs quantum dots. Young Scientists Forum 2017.DOI
Lin Wen, Yudong Li, Dong Zhou, Jie Feng, Qi Guo, Xing-yao ZHANG, Xin Yu (2018). Degradation mechanism of dark signal of CCD exposed to 3MeV and 10MeV proton. Young Scientists Forum 2017.DOI
Xiaolong Li, Wu Lu, Xin Wang, Xin Yu, Qi Guo, Jing Sun, Mohan Liu, Shuai Yao, Xinyu Wei, Chengfa He (2018). Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor. Chinese Physics B.DOI
Teng Ma, Xue‐Feng Yu, Jiangwei Cui, Qiwen Zheng, Hang Zhou, Dandan Su, Qi Guo (2018). Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices. Microelectronics Reliability.DOI
Shuxing Zhou, Ming Qi, Likun Ai, Shumin Wang, Anhuai Xu, Qi Guo (2017). Growth and electrical properties of high-quality InGaAsBi thin films using gas source molecular beam epitaxy. Japanese Journal of Applied Physics.DOI
Qiwen Zheng, Jiangwei Cui, Xue‐Feng Yu, Wu Lu, Chengfa He, Teng Ma, Jinghao Zhao, Ren Diyuan, Qi Guo (2017). Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose. IEEE Transactions on Nuclear Science.DOI
Xiaolong Li, Wu Lu, Xin Wang, Qi Guo, Xin Yu, Chengfa He, Jing Sun, Mohan Liu, Shuai Yao, Xinyu Wei (2017). Using temperature-switching approach to evaluate the ELDRS of bipolar devices. Radiation effects and defects in solids.DOI
Xiaofan Zhao, Maliya Heini, Momin Sailai, Abuduwayiti Aierken, Qi Guo, Yudong Li, Shulong Lu, Pan Dai, Yuanyuan Wu, Ming Tan (2017). 1-MeV electron irradiation effects on InGaAsP/InGaAs double-junction solar cell and its component subcells. Science China Information Sciences.DOI
Lindong Ma, Yudong Li, Qi Guo, Lin Wen, Dong Zhou, Jie Feng, Yuan Liu, Junzhe Zeng, Xiang Zhang, Tianhui Wang (2017). Analysis of proton and γ -ray radiation effects on CMOS active pixel sensors. Chinese Physics B.DOI
Qiwen Zheng, Jiangwei Cui, Mengxin Liu, Dandan Su, Hang Zhou, Teng Ma, Xue‐Feng Yu, Wu Lu, Qi Guo, Fazhan Zhao (2017). Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin*. Chinese Physics B.DOI
Teng Ma, Qiwen Zheng, Jiangwei Cui, Hang Zhou, Dandan Su, Xue‐Feng Yu, Qi Guo (2017). An Increase in TDDB Lifetime of Partially Depleted SOI Devices Induced by Proton Irradiation*. Chinese Physics Letters.DOI
Pan Dai, Lian Ji, Ming Tan, Shiro Uchida, Yuanyuan Wu, Abuduwayiti Aierken, Maliya Heini, Qi Guo, Lifeng Bian, Shulong Lu, Hui Yang (2017). Electron irradiation study of room-temperature wafer-bonded four-junction solar cell grown by MBE. Solar Energy Materials and Solar Cells.DOI
Liang Fang, Abuduwayiti Aierken, Zhen Pan, Qiming Zhang, Zhanhang Li, Maliya Heini, Wei Gao, Hui Yang Gao, Ronghua Wan, Bao Zhang, He Wang, Qi Guo (2017). Radiation resistant of upright metamorphic GaInP/GaInAs/Ge triple junction solar cells for space use. Conference record of the IEEE Photovoltaic Specialists Conference.DOI
Qiwen Zheng, Jiangwei Cui, Mengxin Liu, Hang Zhou, Mohan Liu, Ying Wei, Dandan Su, Teng Ma, Wu Lu, Xue‐Feng Yu, Qi Guo, Chengfa He (2017). Total Ionizing Dose Influence on the Single-Event Upset Sensitivity of 130-nm PD SOI SRAMs. IEEE Transactions on Nuclear Science.DOI
Jing L. Sun, Qi Guo, Xin Yu, Chengfa He, Shi Wei-Lei, Xingyao Zhang (2017). Characteristics of p-i-n diodes basing on displacement damage detector. Radiation Physics and Chemistry.DOI
Pei Li, Chaohui He, Hongxia Guo, Qi Guo, Jinxin Zhang, Mohan Liu (2017). An Investigation of ELDRS in Different SiGe Processes. IEEE Transactions on Nuclear Science.DOI
Shaogang Hu, Sumio Hosaka, Yang Liu, T. P. Chen, Qi Guo, Yudong Li, Xingyao Zhang, L. J. Deng, Qi Yu, You Yin (2017). γ-Ray Radiation Effects on an HfO2-Based Resistive Memory Device. IEEE Transactions on Nanotechnology.DOI
Yudong Li, Chockalingam Veerappan, Myung-Jae Lee, Lin Wen, Qi Guo, Edoardo Charbon (2016). A Radiation-Tolerant, high performance SPAD for SiPMs implemented in CMOS technology.DOI
Xiaolong Li, Lu Wu, Ma Wu-Ying, Xin Wang, Yuzhan Zheng, Ren Diyuan, Qi Guo, H E Chengfa, YU Xue-feng, Aierken, Yudong Li (2016). Use of temperature-switching approach to evaluate the ELDRS of bipolar devices. European Conference on Radiation and Its Effects on Components and Systems.DOI
Xin Wang, Wu Lu, Ma Wu-Ying, Qi Guo, Zhikuan Wang, Chengfa He, Mohan Liu, Xiaolong Li, Jincheng Jia (2016). Radiation Resistance of Fluorine-Implanted PNP Using Gated-Controlled Lateral PNP Transistor Structure. Chinese Physics Letters.DOI
Qiwen Zheng, Jiangwei Cui, Hang Zhou, De-Zhao Yu, Xue‐Feng Yu, Qi Guo (2016). Hot-Carrier Effects on Total Dose Irradiated 65 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors. Chinese Physics Letters.DOI
De-Zhao Yu, Zheng Qi-Wen, Cui Jiangwei, Zhou Hang, YU Xue-feng, Qi Guo (2016). Total dose responses and reliability issues of 65 nm NMOSFETs. Journal of Semiconductors.DOI
Shaogang Hu, Yang Liu, L. J. Deng, Yu Qin, Qi Guo, Yudong Li, Xingyao Zhang (2016). An HfO2-based resistive switching memory device with good anti-radiation capability. IEEE International Nanoelectronics Conference.DOI
Jinxin Zhang, Qi Guo, Hongxia Guo, Wu Lu, Chaohui He, Xin Wang, Pei Li, Mohan Liu (2016). Impact of Bias Conditions on Total Ionizing Dose Effects of $^{60}{\hbox{Co}}\gamma $ in SiGe HBT. IEEE Transactions on Nuclear Science.DOI
Qiwen Zheng, Jiangwei Cui, Hang Zhou, De-Zhao Yu, Xue‐Feng Yu, Wu Lu, Qi Guo, Di-Yuan Ren (2015). Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation. Chinese Physics B.DOI
Pei Li, Hongxia Guo, Qi Guo, Jinxin Zhang, Yao Xiao, Ying Wei, Jiangwei Cui, Lin Wen, Mohan Liu, Xin Wang (2015). Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment. Chinese Physics B.DOI
Haijiao Wang, Yudong Li, Qi Guo, Liya Ma, Lin Wen, Bo Wang (2015). Room-Temperature Annealing of 1MeV Electron Irradiated Lattice Matched In 0.53 Ga 0.47 As/InP Multiple Quantum Wells. Chinese Physics Letters.DOI
Pei Li, Hongxia Guo, Qi Guo, Jinxin Zhang, Ying Wei (2015). Laser-Induced Single Event Transients in Local Oxidation of Silicon and Deep Trench Isolation Silicon-Germanium Heterojunction Bipolar Transistors. Chinese Physics Letters.DOI
Qiwen Zheng, Jiangwei Cui, Xue‐Feng Yu, Qi Guo, Hang Zhou, Di-Yuan Ren (2014). Enhanced Total Ionizing Dose Hardness of Deep Sub-Micron Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors by Applying Larger Back-Gate Voltage Stress. Chinese Physics Letters.DOI
Qiwen Zheng, Xue‐Feng Yu, Jiangwei Cui, Qi Guo, Di-Yuan Ren, Cong Zhong-Chao, Hang Zhou (2014). Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation. Chinese Physics B.DOI
Xue Wu, Wu Lu, Yudong Li, Qi Guo, Xin Wang, Xingyao Zhang, Xin Yu, Wuying Ma (2014). The total ionizing dose effect in 12-bit, 125 MSPS analog-to-digital converters. Journal of Semiconductors.DOI
Xin Wang, Wu Lu, Qi Guo, Xue Wu, Xi Shanbin, Wei Ping Deng, Jiangwei Cui, Jinxin Zhang (2013). Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters. Journal of Semiconductors.DOI
Qiwen Zheng, Xue‐Feng Yu, Jiangwei Cui, Qi Guo, Zhongchao Cong, Xingyao Zhang, Wei Ping Deng, Xiaofu Zhang, Zhengxin Wu (2013). Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress. Journal of Semiconductors.DOI
Xiaofu Zhang, Yudong Li, Qi Guo, Wu Lu (2013). Low-Dose 1 MeV Electron Irradiation-Induced Enhancement in the Photoluminescence Emission of Ga-Rich InGaN Multiple Quantum Wells. Chinese Physics Letters.DOI
Dong Zhou, Liangcai Wu, Qi Guo, Cheng Peng, Chengfa He, Zhitang Song, Feng Rao, Yudong Li, Xi Shanbin (2013). High tolerance of proton irradiation of Ge2Sb2Te5 phase change material. Journal of Alloys and Compounds.DOI
Y. L. Li, Xingjun Wang, Shuai He, Botao Zhang, Le Sun, Y. D. Li, Qi Guo, C. Q. Chen, Z. H. Chen, Wei Ming Lu (2012). Origin of the redshift of the luminescence peak in InGaN light-emitting diodes exposed to Co-60 γ-ray irradiation. Journal of Applied Physics.DOI
Lan Bo, Qi Guo, Sun Jing, Cui Jiangwei, Mao-Shun Li, Rui Chen, Fei Wuxiong, Zhao Yun (2010). Dose-rate effects of p-channel metal oxide semiconductor field-effect transistors at various biasing conditions. Journal of Semiconductors.DOI
Yuzhan Zheng, Lu Wu, Ren Diyuan, Yiyuan Wang, Qi Guo, Yu Xuefeng (2009). Annealing behavior of radiation damage in JFET-input operational amplifiers. Journal of Semiconductors.DOI
Zheng Yu-Zhan, Lu Wu, Ren Diyuan, Wang Gai-li, YU Xue-feng, Qi Guo (2009). ELDRS and dose-rate dependence of vertical NPN transistor. Chinese Physics C.DOI
Yuzhan Zheng, Wu Lu, Ren Diyuan, Qi Guo, Xue‐Feng Yu, Xiaolong Lü (2008). Electron-induced damage to NPN transistors under different fluxes. Nuclear Science and Techniques.DOI
Yanping Liu, Zhaoyang Chen, Wei-Zhen Ba, Fan Yan-Wei, Du Yan-Zhao, Pan Shi-Lie, Qi Guo (2008). A study on the real-time radiation dosimetry measurement system based on optically stimulated luminescence. Chinese Physics C.DOI
Yanping Liu, Zhaoyang Chen, Yanwei Fan, Wei-Zhen Ba, Wu Lu, Qi Guo, Shilie Pan, Aimin Chang, Xinqiang Tang (2008). Design of a novel optically stimulated luminescent dosimeter using alkaline earth sulfides doped with SrS:Eu,Sm materials. Progress in Natural Science Materials International.DOI
Ye Liu, Ze Chen, Wenqi Ba, Y FAN, Qi Guo, Xiaofeng Yu, Aimin Chang, W LU, Yonghua Du (2008). Optically stimulated luminescence dosimeter based on CaS:Eu,Sm. Nuclear Science and Techniques.DOI
Zhang Guo-Qiang, Qi Guo, Erkin, Lu Wu, Ren Diyuan (2004). A novel technique for predicting ionizing radiation effects of commercial MOS devices. Chinese Physics.DOI