张增星｜复旦大学｜学者主页

2026

Ferroelectric-Enhanced Ultrafast Nonvolatile Floating-Gate Memory

Zheng Zhang, Kang Wang, Jianguo Dong, Binghui Ge, Shiyou Chen, Zengxing Zhang, Peng Zhou

Nano Letters

DOI

2026

A hardware-implemented adaptive pruning neural network

Yusen Tian, Penghao Chen, Ziyu Ming, Zengxing Zhang

National Science Review

DOI

2025

Binary Neural Network Based on a Programmable Graphene/Si Schottky Diode for In-Sensor Processing Image Sensors

Penghao Chen, Haoran Sun, Ziyu Ming, Yusen Tian, Zengxing Zhang

ACS Nano

DOI

2025

Electrooptic Dual-Mode Synergetic Control of Two-Dimensional Nonvolatile Floating-Gate Transistors for Artificial Synapses

Wennan Hu, Zheng Zhang, Zheng Zhang, Haoran Sun, Yuehao Zhao, Yaping He, Zhe Sheng, Zengxing Zhang, Zengxing Zhang

ACS Applied Materials & Interfaces

DOI

2025

Ambipolar ohmic contact to silicon for high-performance brain-inspired image sensors

Haoran Sun, Penghao Chen, Ziyu Ming, Zheng Zhang, Zheng Zhang, Yusen Tian, Yusen Tian, Binghui Ge, Zengxing Zhang, Zengxing Zhang, Peng Zhou

Nature Communications

DOI

2025

Phase‐Change‐Assisted Electrostatic Doping Enabling Nonvolatile Programmability of 2D Materials

Tian Liu, Hu Wang, Zheng Zhang, Jiabin Shen, Zengxing Zhang, Zengguang Cheng, Peng Zhou

Small

DOI

2025

Back Gated Electronic Mapping of 2D Transition Metal Dichalcogenides

Huanjing Yang, Shicheng Zeng, Yan Hu, Zengxing Zhang, Zhengzong Sun

ACS Applied Electronic Materials

DOI

2025

Photocontrolled Reconfigurable Logic Based on a Two-Dimensional Heterostructured Transistor

Yusen Tian, Zhe Sheng, Zheng Zhang, Zheng Zhang, Penghao Chen, Ziyu Ming, Haoran Sun, Zengxing Zhang, Zengxing Zhang

ACS Applied Electronic Materials

DOI

2024

Programmable Optical Encryption Based on Electrical-Field-Controlled Exciton–Trion Transitions in Monolayer WS2

Hu Wang, Zheng Zhang, Zheng Zhang, Wentao Huang, Penghao Chen, Yaping He, Ziyu Ming, Yue Wang, Zengguang Cheng, Jiabin Shen, Zengxing Zhang, Zengxing Zhang

ACS Applied Materials & Interfaces

DOI

2024

High drain field impact ionization transistors as ideal switches

Baowei Yuan, Zhibo Chen, Yingxin Chen, Chengjie Tang, Weiao Chen, Zengguang Cheng, Chunsong Zhao, Zhaozhao Hou, Qiang Zhang, Weizhuo Gan, Jiacheng Gao, Jiale Wang, Jeffrey Xu, Guangxi Hu, Zhenhua Wu, Kun Luo, Mingyan Luo, Yuanbo Zhang, Zengxing Zhang, Shisheng Xiong, Chunxiao Cong, Wenzhong Bao, Shunli Ma, Jing Wan, Peng Zhou, Ye Lü

Nature Communications

DOI

2024

Full Two-Dimensional Ambipolar Field-Effect Transistors for Transparent and Flexible Electronics

Ziyu Ming, Haoran Sun, Hu Wang, Zhe Sheng, Yue Wang, Zengxing Zhang

ACS Applied Materials & Interfaces

DOI

2024

Multilevel Ferroelectric Domain Wall Memory for Neuromorphic Computing

Bo Shen, Haoran Sun, Xianyu Hu, Jie Sun, Jun Feng Jiang, Zengxing Zhang, Anquan Jiang

Advanced Functional Materials

DOI

2023

Recent progress on ambipolar 2D semiconductors in emergent reconfigurable electronics and optoelectronics

赵月豪，孙浩然，盛喆，张卫，周鹏，张增星

Chinese Physics B

2023

Full two-dimensional ambipolar CFET-like architecture for switchable logic circuits

Wennan Hu, Yunlin Liu, Zhang-Cheng Huang, Jianguo Dong, Yue Wang, Weiao Chen, Zhe Sheng, Haoran Sun, Guangxi Hu, Chunxiao Cong, David-Wei Zhang, Ye Lu, P. Zhou, Zengxing Zhang

Journal of Physics D: Applied Physics

DOI

2023

Chemical Dopant-Free Controlled MoTe2/MoSe2 Heterostructure toward a Self-Driven Photodetector and Complementary Logic Circuits.

Wennan Hu, Hu Wang, Jianguo Dong, Haoran Sun, Yue Wang, Zhe Sheng, Zengxing Zhang

ACS Applied Materials and Interfaces

DOI

2023

Reconfigurable Logic-in-Memory Computing Based on a Polarity-Controllable Two-Dimensional Transistor.

Zhe Sheng, Jianguo Dong, Wennan Hu, Yue Wang, Haoran Sun, D. Zhang, Pengcheng Zhou, Zengxing Zhang

Nano letters (Print)

DOI

2023

Black silicon for near-infrared and ultraviolet photodetection: A review

Zhou Zhao, Zengxing Zhang, Jun-Min Jing, Rui Gao, Z. Liao, Wen-Jun Zhang, Guo-Hua Liu, Yong-Hua Wang, Kai-Ying Wang, C. Xue

APL Materials

DOI

2023

Van der Waals contacted WSe2 ambipolar transistor for in-sensor computing

Yue Wang, Haoran Sun, Zhe Sheng, Jianguo Dong, Wennan Hu, Dongsheng Tang, Zengxing Zhang

Nano Research

DOI

2022

Study on the Field-Effect WSe2/Si Heterojunction Diode

Rui Yu, Zhe Sheng, Wennan Hu, Yue Wang, Jianguo Dong, Haoran Sun, Zengguang Cheng, Zengxing Zhang

Chinese Physics B

DOI

2022

The Device Compact Model Based on Multi-gradient Neural Network and Its Application on MoS2 Field Effect Transistors

Guodong Qi, Qi-Hang Yang, Xin-Yu Chen, Zengxing Zhang, P. Zhou, W. Bao, Ye Lu

IEEE Electron Devices Technology and Manufacturing Conference

DOI

2022

Halide perovskite memristor with ultra-high-speed and robust flexibility for artificial neuron applications

Ling-zhi Tang, Y. Huang, Chen Wang, Zhenxuan Zhao, Yiming Yang, J. Bian, Hua-Qiang Wu, Zengxing Zhang, David Wei Zhang

Journal of Materials Chemistry C

DOI

2022

Two-dimensional complementary gate-programmable PN junctions for reconfigurable rectifier circuit

Zhe Sheng, Yue Wang, Wennan Hu, Haoran Sun, Jianguo Dong, Rui Yu, D. Zhang, Pengcheng Zhou, Zengxing Zhang

Nano Reseach

DOI

2022

Flexible Threshold Switching Selectors with Ultrahigh Endurance Based on Halide Perovskites (Adv. Electron. Mater. 2/2022)

Ling-zhi Tang, Y. Huang, Chen Wang, Zhenxuan Zhao, Yiming Yang, J. Bian, Hua-Qiang Wu, Zengxing Zhang, David-Wei Zhang

Advanced Electronic Materials

DOI

2021

WSe2 N‐Type Negative Capacitance Field‐Effect Transistor with Indium Low Schottky Barrier Contact

Jianguo Dong, Zhe Sheng, Rui Yu, Wennan Hu, Yue Wang, Haoran Sun, David-Wei Zhang, P. Zhou, Zengxing Zhang

Advanced Electronic Materials

DOI

2021

High-Performance X-ray Detector Based on Single-Crystal β-Ga2O3:Mg.

Jiawen Chen, Hui-Li Tang, Bo Liu, Zhichao Zhu, M. Gu, Zengxing Zhang, Qiang Xu, Jun-Long Xu, Lei-Dang Zhou, Liang Chen, X. Ouyang

ACS Applied Materials and Interfaces

DOI

2021

Fabrication of Needle-Like Silicon Nanowires by Using a Nanoparticles-Assisted Bosch Process for Both High Hydrophobicity and Anti-Reflection

Zengxing Zhang, Guo-Hua Liu, Kai-Ying Wang

Micromachines

DOI

2021

Flexible Threshold Switching Selectors with Ultrahigh Endurance Based on Halide Perovskites

Ling-zhi Tang, Y. Huang, Chen Wang, Zhenxuan Zhao, Yiming Yang, J. Bian, Hua-Qiang Wu, Zengxing Zhang, David Wei Zhang

Advanced Electronic Materials

DOI

2020

Ambipolar 2D Semiconductors and Emerging Device Applications.

Wennan Hu, Zhe Sheng, Xiang Hou, Huawei Chen, Zengxing Zhang, David-Wei Zhang, P. Zhou

Small Methods

DOI

2020

Ultralow Broadband Reflectivity in Black Silicon via Synergy between Hierarchical Texture and Specific‐Size Au Nanoparticles

Zengxing Zhang, T. Martinsen, Guo-Hua Liu, M. Tayyib, D. Cui, M. Boer, F. Karlsen, H. Jakobsen, C. Xue, Kai-Ying Wang

Advanced Optical Materials

DOI

2020

Recent Progress of Black Silicon: From Fabrications to Applications

Zheng Fan, D. Cui, Zengxing Zhang, Zhou Zhao, Hongmei Chen, Yanyun Fan, Peng-Lu Li, Zhi-Dong Zhang, C. Xue, Shubin Yan

Nanomaterials

DOI

2019

Black silicon with order-disordered structures for enhanced light trapping and photothermic conversion

Zengxing Zhang, Yong-Hua Wang, Per Anders Stensby Hansen, K. Du, K. Gustavsen, Guo-Hua Liu, F. Karlsen, O. Nilsen, C. Xue, Kai-Ying Wang

Nano Energy

DOI

2018

Floating-gate controlled programmable non-volatile black phosphorus PNP junction memory.

Pengfei Zhang, Dong Li, Mingyuan Chen, Qi-Jun Zong, Jun Shen, Dongyun Wan, Jingtao Zhu, Zengxing Zhang

Nanoscale

DOI

2018

Tandem gasochromic-Pd-WO3/graphene/Si device for room-temperature high-performance optoelectronic hydrogen sensors

Mingyuan Chen, Liping Zou, Zeng-Hai Zhang, Jun Shen, Dong Li, Qi-Jun Zong, G. Gao, Guangming Wu, Zengxing Zhang

DOI

2017

Gate-Controlled BP-WSe2 Heterojunction Diode for Logic Rectifiers and Logic Optoelectronics.

Dong Li, Biao Wang, Mingyuan Chen, Jun Zhou, Zengxing Zhang

Small

DOI

2017

Two-dimensional non-volatile programmable p-n junctions.

Dong Li, Mingyuan Chen, Zhengzong Sun, Peng Yu, Zheng Liu, P. Ajayan, Zengxing Zhang

Nature Nanotechnology

DOI

2017

Tunable bandgap in few-layer black phosphorus by electrical field

Dong Li, Jin-Rong Xu, Kun Ba, Ningning Xuan, Mingyuan Chen, Zhengzong Sun, Yu-Zhong Zhang, Zengxing Zhang

DOI

2017

Floating-Gate Manipulated Graphene-Black Phosphorus Heterojunction for Nonvolatile Ambipolar Schottky Junction Memories, Memory Inverter Circuits, and Logic Rectifiers.

Dong Li, Mingyuan Chen, Qi-Jun Zong, Zengxing Zhang

Nano letters (Print)

DOI

2017

Direct growth of nanocrystalline graphene/graphite all carbon transparent electrode for graphene glass and photodetectors

Qichong Zhang, Lei Tang, Jie Luo, Jun Zhang, Xiao-Na Wang, Dong Li, Yagang Yao, Zengxing Zhang

DOI

2017

Electrically tunable large magnetoresistance in graphene/silicon Schottky junctions

Xiao-Juan Wang, Tao Wang, De-Zheng Yang, Zhaolong Yang, Dong Li, Mingyuan Chen, Ming-Su Si, D. Xue, Zengxing Zhang

DOI

2016

Tunable optical analog to electromagnetically induced transparency in graphene-ring resonators system

Yong-Hua Wang, C. Xue, Zengxing Zhang, Hua Zheng, Wen-Dong Zhang, Shubin Yan

Scientific Reports

DOI

2015

Nonvolatile Floating‐Gate Memories Based on Stacked Black Phosphorus–Boron Nitride–MoS2 Heterostructures

Dong Li, Xiao-Juan Wang, Qichong Zhang, Liping Zou, Xiang-Fan Xu, Zengxing Zhang

DOI

2015

Thermal annealing and air exposing effect on the graphene/silicon Schottky junctions

Xiao-Juan Wang, Yuanyuan Wang, Dong Li, Liping Zou, Qichong Zhang, Jun Zhou, Dongfang Liu, Zengxing Zhang

DOI

2015

Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

Xiao-Juan Wang, Dong Li, Qichong Zhang, Liping Zou, Feng-Li Wang, Jun Zhou, Zengxing Zhang

DOI

2015

Photo-Induced Doping in Graphene/Silicon Heterostructures

Xiao-Juan Wang, Liping Zou, Dong Li, Qichong Zhang, Feng-Li Wang, Zengxing Zhang

DOI

2014

Direct Growth of Nanocrystalline Graphene/Graphite Transparent Electrodes on Si/SiO2 for Metal‐Free Schottky Junction Photodetectors

Zengxing Zhang, Yun-Xian Guo, Xiao-Juan Wang, Dong Li, Feng-Li Wang, Si-Shen Xie

DOI

2014

Direct Growth of Nanographene on Silicon with Thin Oxide Layer for High‐Performance Nanographene‐Oxide‐Silicon Diodes

Qichong Zhang, Xiao-Juan Wang, Dong Li, Zengxing Zhang

DOI

2013

Controlled fabrication of intermolecular junctions of single-walled carbon nanotube/graphene nanoribbon.

Fang Yu, Hai-Qing Zhou, Zengxing Zhang, Gang Wang, Huai-Chao Yang, Min-Jiang Chen, Li Tao, Dong-Sheng Tang, Jun He, Lian-Feng Sun

Small

DOI

2013

Catalyst-free growth of nanocrystalline graphene/graphite patterns from photoresist.

Zengxing Zhang, Bing-Hui Ge, Yun-Xian Guo, Dong-Sheng Tang, Xiao-Juan Wang, Feng-Li Wang

Chemical Communications

DOI

2013

Field-effect transistors based on single graphene oxide nanoribbon from longitude-unzipped carbon nanotubes

Xiao-Juan Wang, Yun-Xian Guo, Zengxing Zhang

Journal of nanoparticle research

DOI

2012

The method of preparing the photoresist using a graphene / graphite pattern

Yun-Xian Guo, Xiao-Juan Wang, Zengxing Zhang

2012

Experimental observation of radial breathing-like mode of graphene nanoribbons

Fang Yu, Hai-Qing Zhou, Zengxing Zhang, Dong-Sheng Tang, Min-Jiang Chen, Huai-Chao Yang, G. Wang, Hai-Fang Yang, C. Gu, Lian-Feng Sun

DOI

2012

Catalyst-free method for preparing graphene in large area

Zengxing Zhang, Yun-Xian Guo

2011

Tailoring Electronic Properties of Graphene by π–π Stacking with Aromatic Molecules

Zengxing Zhang, Helin Huang, Xiao-Mei Yang, Ling Zang

DOI

2010

Soluble graphene through edge-selective functionalization

Zhengzong Sun, S. Kohama, Zengxing Zhang, Jay R. Lomeda, J. Tour

DOI

2009

Transforming carbon nanotube devices into nanoribbon devices.

Zengxing Zhang, Zhengzong Sun, Jun Yao, D. Kosynkin, J. Tour

Journal of the American Chemical Society

DOI

1997

Investigation of dislocations and traps in MBE grown p-InGaAs/GaAs heterostructures

A. Du, M. Li, T. Chong, Shi-Jie Xu, Zengxing Zhang, Da-Peng Yu

DOI

1997

Dislocations and Traps in MBE Grown Lattice Mismatched p- InGaAs/GaAs Layers on GaAs Substrates

A. Du, M. Li, T. Chong, Zengxing Zhang

DOI

1996

Dislocations and related traps in p‐InGaAs/GaAs lattice‐mismatched heterostructures

A. Du, Ming Li, T. Chong, K. Teo, Wai-Shing Lau, Zengxing Zhang

DOI

精选作品

期刊论文

Ferroelectric-Enhanced Ultrafast Nonvolatile Floating-Gate Memory

A hardware-implemented adaptive pruning neural network

Binary Neural Network Based on a Programmable Graphene/Si Schottky Diode for In-Sensor Processing Image Sensors

Electrooptic Dual-Mode Synergetic Control of Two-Dimensional Nonvolatile Floating-Gate Transistors for Artificial Synapses

Ambipolar ohmic contact to silicon for high-performance brain-inspired image sensors

Phase‐Change‐Assisted Electrostatic Doping Enabling Nonvolatile Programmability of 2D Materials

Back Gated Electronic Mapping of 2D Transition Metal Dichalcogenides

Photocontrolled Reconfigurable Logic Based on a Two-Dimensional Heterostructured Transistor

Programmable Optical Encryption Based on Electrical-Field-Controlled Exciton–Trion Transitions in Monolayer WS2

High drain field impact ionization transistors as ideal switches

Full Two-Dimensional Ambipolar Field-Effect Transistors for Transparent and Flexible Electronics

Multilevel Ferroelectric Domain Wall Memory for Neuromorphic Computing

Recent progress on ambipolar 2D semiconductors in emergent reconfigurable electronics and optoelectronics

Full two-dimensional ambipolar CFET-like architecture for switchable logic circuits

Chemical Dopant-Free Controlled MoTe2/MoSe2 Heterostructure toward a Self-Driven Photodetector and Complementary Logic Circuits.

Reconfigurable Logic-in-Memory Computing Based on a Polarity-Controllable Two-Dimensional Transistor.

Black silicon for near-infrared and ultraviolet photodetection: A review

Van der Waals contacted WSe2 ambipolar transistor for in-sensor computing

Study on the Field-Effect WSe2/Si Heterojunction Diode

The Device Compact Model Based on Multi-gradient Neural Network and Its Application on MoS2 Field Effect Transistors

Halide perovskite memristor with ultra-high-speed and robust flexibility for artificial neuron applications

Two-dimensional complementary gate-programmable PN junctions for reconfigurable rectifier circuit

Flexible Threshold Switching Selectors with Ultrahigh Endurance Based on Halide Perovskites (Adv. Electron. Mater. 2/2022)

WSe2 N‐Type Negative Capacitance Field‐Effect Transistor with Indium Low Schottky Barrier Contact

High-Performance X-ray Detector Based on Single-Crystal β-Ga2O3:Mg.

Fabrication of Needle-Like Silicon Nanowires by Using a Nanoparticles-Assisted Bosch Process for Both High Hydrophobicity and Anti-Reflection

Flexible Threshold Switching Selectors with Ultrahigh Endurance Based on Halide Perovskites

Ambipolar 2D Semiconductors and Emerging Device Applications.

Ultralow Broadband Reflectivity in Black Silicon via Synergy between Hierarchical Texture and Specific‐Size Au Nanoparticles

Recent Progress of Black Silicon: From Fabrications to Applications

Black silicon with order-disordered structures for enhanced light trapping and photothermic conversion

Floating-gate controlled programmable non-volatile black phosphorus PNP junction memory.

Tandem gasochromic-Pd-WO3/graphene/Si device for room-temperature high-performance optoelectronic hydrogen sensors

Gate-Controlled BP-WSe2 Heterojunction Diode for Logic Rectifiers and Logic Optoelectronics.

Two-dimensional non-volatile programmable p-n junctions.

Tunable bandgap in few-layer black phosphorus by electrical field

Floating-Gate Manipulated Graphene-Black Phosphorus Heterojunction for Nonvolatile Ambipolar Schottky Junction Memories, Memory Inverter Circuits, and Logic Rectifiers.

Direct growth of nanocrystalline graphene/graphite all carbon transparent electrode for graphene glass and photodetectors

Electrically tunable large magnetoresistance in graphene/silicon Schottky junctions

Tunable optical analog to electromagnetically induced transparency in graphene-ring resonators system

Nonvolatile Floating‐Gate Memories Based on Stacked Black Phosphorus–Boron Nitride–MoS2 Heterostructures

Thermal annealing and air exposing effect on the graphene/silicon Schottky junctions

Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

Photo-Induced Doping in Graphene/Silicon Heterostructures

Direct Growth of Nanocrystalline Graphene/Graphite Transparent Electrodes on Si/SiO2 for Metal‐Free Schottky Junction Photodetectors

Direct Growth of Nanographene on Silicon with Thin Oxide Layer for High‐Performance Nanographene‐Oxide‐Silicon Diodes

Controlled fabrication of intermolecular junctions of single-walled carbon nanotube/graphene nanoribbon.

Catalyst-free growth of nanocrystalline graphene/graphite patterns from photoresist.

Field-effect transistors based on single graphene oxide nanoribbon from longitude-unzipped carbon nanotubes

The method of preparing the photoresist using a graphene / graphite pattern

Experimental observation of radial breathing-like mode of graphene nanoribbons

Catalyst-free method for preparing graphene in large area

Tailoring Electronic Properties of Graphene by π–π Stacking with Aromatic Molecules

Soluble graphene through edge-selective functionalization

Transforming carbon nanotube devices into nanoribbon devices.

Investigation of dislocations and traps in MBE grown p-InGaAs/GaAs heterostructures

Dislocations and Traps in MBE Grown Lattice Mismatched p- InGaAs/GaAs Layers on GaAs Substrates

Dislocations and related traps in p‐InGaAs/GaAs lattice‐mismatched heterostructures

预印本

Resistive switching in nanogap systems on SiO2 substrates

研究方向