柯少颖

2026

PtSe2/GeSn/InP 2D-3D heterojunction based on MBE-grown high-Sn-content GeSn film for high-responsivity broadband infrared detection via negative photoconductivity effect

Applied Surface Science

DOI

2026

On-Chip Polarimetric Photodetector with High Polarization Extinction Ratio and Extended SWIR Response Using PdSe 2 /InGaAs/InP Vertical P-I-N Heterostructure

Nano Letters

DOI

2026

Defect-Engineered ITO/WSe2/W/Si Heterojunction for Broadband Photodetection and Waveform-Encoded Optical Communication

ACS Applied Materials & Interfaces

DOI

2026

Al2O3-enabled in-situ selenization of WSe2 on Ge toward broadband, self-powered photodetectors for optical communication

Optical Materials

DOI

2026

Full-Wafer-Bonded Ge/Si SACM Avalanche Photodiode Unlocking Ultrahigh Gain of 7513 and Gain-Bandwidth Product of 2904 GHz

Journal of Lightwave Technology

DOI

2026

Nearly 4 in. Single-oriented WSe2 films on Si via in situ selenization for self-powered, ultrabroadband photodetection

Surfaces and Interfaces

DOI

2026

Unlocking two-stage photoresponse via interface trap engineering for self-powered, broadband Ge photodetectors with low-dark-current operation beyond 2200 nm

Applied Surface Science

DOI

2026

Design realization of a 72 GHz Ge/Si PIN detector based on wafer bonding with poly-Si interlayer

Vacuum

DOI

2026

Dual-Zone Temperature-Modulated Growth of PtTe 2 /Ge Schottky Diodes for High-Speed Broadband Photodetection from Visible to 4.2 μm

ACS Applied Materials & Interfaces

DOI

2026

Broadband and high-speed micro-scale PtSe2/Si 2D-3D PIN photodetector for on-chip polarization-encoded communication and imaging

Applied Surface Science

DOI

2026

High-Responsivity and >43.5 GHz Bandwidth Ge/Si PIN Photodetector Enabled by Microcrystalline Ge Wafer Bonding and Smart-Cut Technology

IEEE Transactions on Electron Devices

DOI

2025

High-vacuum Ar plasma-activated in-situ wafer bonding for low-dislocation-density Ge-on-SOI heterojunction with microcrystalline Ge interlayer

Applied Surface Science

DOI

2025

High-performance p + -InGaAs/i-InGaAs/n + -Si photodetector achieved by low-quality crystalline Ge interlayer wafer bonding

Optics Letters

DOI

2025

High-Temperature Operation of InGaAs/Si Avalanche Photodiodes Enabled by Microcrystalline Ge Interlayer With Optically Tunable Punch-Through Voltage

IEEE Electron Device Letters

DOI

2025

InGaAs/Si Avalanche Photodiode With High Gain and Low Dark Current Achieved by Two-Step Wafer Bonding

IEEE Transactions on Electron Devices

DOI

2025

Enhanced electric field modulation in the wafer-bonded InGaAs/Si APD by the groove rings in the multiplication layer

Engineering Research Express

DOI

2025

Stable Self-Powered Broadband PtSe2/Si Pin Infrared Photodetector Based on a High-Quality Ultrapure Intrinsic Si Film Exfoliated by Si/SOI Wafer Bonding

ACS Applied Materials & Interfaces

DOI

2025

Negative Photoconductivity Engineering in High-Sn GeSn/InP Heterostructures Enabling Record-Breaking Photoresponse for Short Wave Infrared Detection

Journal of Lightwave Technology

DOI

2025

In Situ Selenization‐Engineered PtSe 2 /PdSe 2 Heterostructures for Short‐Wave Infrared Polarization‐Sensitive Photodetection and Information Transmission

Advanced Optical Materials

DOI

2025

In Situ Selenization‐Enabled PdSe 2 Homojunctions for Ultrahigh Polarization Sensitivity and Rapid Broadband Photodetection

Advanced Optical Materials

DOI

2025

In Situ Selenized Back‐to‐Back WSe 2 /W/Ge Dual Schottky Heterojunction for Broadband High‐Speed Polarization‐Encoded Communication

Laser & Photonics Review

DOI

2025

Polarization‐Encoded Transmission Enabled by PtSe 2 /Si PIN Photodetectors with Circular Groove Light‐Trapping Architecture

Advanced Functional Materials

DOI

2025

Selenization Growth Mechanism of PdSe 2 Nanoscale-Thick Films in Large-Diameter Quartz Tube and PdSe 2 /Si 2D-3D PIN-like Photodetectors

ACS Applied Nano Materials

DOI

2025

Broadband (300–2200 nm) all-Si Schottky photodetector with ultralow dark current for NIR communication and imaging applications

Optics Letters

DOI

2025

In Situ Selenization Engineered Dual Schottky Heterojunctions: A Novel Architecture for High‐Speed Broadband Photonic Communication Detector Arrays

Small

DOI

2025

Quantum-Confined 0D/2D/3D Heterostructure Photodetectors with an Ultrafast Self-Powered Broadband Response for Short-Wave Infrared Imaging

ACS Applied Materials & Interfaces

DOI

2025

300–2200 nm Broadband Si Schottky Photodetectors With Ultra-Low Dark Current (<10 nA/cm 2 ) via Al 2 O 3 /SiO x Interface Engineering

Journal of Lightwave Technology

DOI

2025

532–2200 nm Si Schottky Photodetectors Featuring Nonuniform Barrier Layers

IEEE Transactions on Electron Devices

DOI

2025

Selenization Mechanism of Nearly 4 in. Single-Oriented PtSe2 and PtSe2/n–-Si/n+-Si 2D–3D PIN Wide-Spectrum Polarization Detectors

ACS Applied Materials & Interfaces

DOI

2025

High-quality Si/III-V hetero-bonding by microcrystalline Ge interlayer and exfoliation of Si-based III-V films

Vacuum

DOI

2025

High-Gain Ge/Si Avalanche Photodetector With Stable Operation Temperature Up to 500 K

IEEE Electron Device Letters

DOI

2025

Magnetron sputtering growth and growth mechanism of GeSn films with Sn content exceeding 25% on InP substrates

Applied Surface Science

DOI

2024

无电荷层InGaAs/Si雪崩光电探测器的优化设计

《光学学报》

2024

基于poly-Si键合层的SACM型Ge/Si APD的优化设计研究

《中国激光》

2024

倍增区凹槽环深度对键合无电荷层InGaAs/Si APD性能的影响

《激光与光电子学进展》

2024

多晶键合层对分离吸收电荷倍增型锗/硅雪崩光电二极管性能的影响

《硅酸盐学报》

2024

Achievement of non-charge layer InGaAs/Si avalanche photodiodes by introducing a groove ring at the bonding interface

Physica Scripta

DOI

2024

InGaAs/Si PIN photodetector with low interfacial recombination rates realized by wafer bonding with a polycrystalline Si interlayer

Applied Physics Letters

DOI

2024

Low dark current lateral Ge PIN photodetector array with resonant cavity effect for short wave infrared imaging

Journal of Physics D: Applied Physics

DOI

2024

Interface characteristics of InP/Si heterojunction fabricated by low-temperature wafer bonding based on microcrystalline Ge interlayer

Vacuum

DOI

2024

High-Speed Broadband PtSe2/Si 2D-3D Pin Photodetector with a Lightly n-Doped Si Interlayer Based on Single-Oriented PtSe2

ACS Photonics

DOI

2024

Double modulation of the electric field in InGaAs/Si APD by groove rings for the achievement of THz gain-bandwidth product

Physica Scripta

DOI

2024

High-Speed Self-Powered PdSe 2 /Si 2D-3D PIN-like Photodetector with Broadband Response Based on PdSe 2 Quantum Island Structure

ACS Applied Materials & Interfaces

DOI

2023

不同晶态Ge薄膜键合层对InGaAs/Si雪崩光电二极管性能的影响研究

《中国激光》

2023

ITO纳米棒结构红外波段消光特性模拟与分析

《光学学报》

2023

Rh纳米结构消光特性模拟与分析

《激光与光电子学进展》

2023

Effect of the bonding layer and multigrading layers on the performance of a wafer-bonded InGaAs/Si single-photon detector.

Applied Optics

DOI

2023

High-quality InGaAs films bonded on Si substrate with a thin polycrystalline Si intermediate layer

Applications of Surface Science

DOI

2023

High-gain bandwidth product of wafer-bonded near-infrared III-V/silicon APD using polycrystalline silicon bonding layer

Physica Scripta

DOI

2023

Effect of bubbles at the bonded interface on the performance of GeSn/Si PIN photodetector

Physica Scripta

DOI

2023

High-quality Ge/Si hetero-bonding by sputtered microcrystalline Ge interlayer

Vacuum

DOI

2023

Bonding mechanisms and electrical properties of Ge/Si and Si/Si bonded wafers achieved by thin microcrystalline Ge interlayer

Journal of Alloys and Compounds

DOI

2022

InGaAs/Si键合界面a-Si键合层厚度对InGaAs/Si雪崩光电二极管性能的影响

《光子学报》

2022

不同Ge组分a-Si1-xGex键合层对InGaAs/Si雪崩光电二极管性能的影响（英文）

《光子学报》

2022

Blocking of Ge/Si lattice mismatch and fabrication of high-quality SOI-based Ge film by interlayer wafer bonding with polycrystalline Ge bonding layer

Vacuum

DOI

2022

Theoretical Achievement of THz Gain-Bandwidth Product of Wafer-Bonded InGaAs/Si Avalanche Photodiodes With Poly-Si Bonding Layer

IEEE Transactions on Electron Devices

DOI

2021

硅基Ⅳ族材料外延生长及其发光和探测器件研究进展

《中国科学:物理学 力学 天文学》

2021

Any-polar resistive switching behavior in Ti intercalated Pt/Ti/HfO2/Ti/Pt device

Chinese Physics B

DOI

2021

High-performing silicon-based germanium Schottky photodetector with ITO transparent electrode*

Chinese Physics B

DOI

2021

Ge/Si异质键合界面纳米级氧化层对Ge/Si异质结光电特性调控机制

《硅酸盐学报》

DOI

2021

Theoretical Prediction of High-Performance Room-Temperature InGaAs/Si Single-Photon Avalanche Diode Fabricated by Semiconductor Interlayer Bonding

IEEE Transactions on Electron Devices

DOI

2021

Effect of the thermal stress on the defect evolution at GaAs/Si wafer bonding with a-Ge intermediate layer

Semiconductor Science and Technology

DOI

2021

Study on crystallization mechanism of GeSn interlayer for low temperature Ge/Si bonding

Journal of materials science. Materials in electronics

DOI

2021

Strain-induced abnormal Ge/Si inter-diffusion during hetero-epitaxy process

Vacuum

DOI

2021

Dislocation nucleation triggered by thermal stress during Ge/Si wafer bonding process at low annealing temperature

DOI

2021

Research progress in the epitaxial growth of silicon-based group IV materials, and their light emitters and photodetectors

DOI

2020

Ge/Si异质键合半/绝接触界面态对异质结光电输运特性的影响研究

《光学学报》

2020

键合Si/Si p-n结电学输运特性及电场增强效应研究

《光子学报》

2020

He离子注入对Ge中缺陷行为的影响研究

《人工晶体学报》

DOI

2020

Theoretical study of a group IV p–i–n photodetector with a flat and broad response for visible and infrared detection

Journal of Semiconductors

DOI

2020

Polycrystalline Ge intermediate layer for Ge/Si wafer bonding and defect elimination in Si (SOI)-based exfoliated Ge film

DOI

2020

Bubble evolution mechanism and defect repair during the fabrication of high-quality germanium on insulator substrate

Semiconductor Science and Technology

DOI

2020

A review: wafer bonding of Si-based semiconductors

Journal of Physics D: Applied Physics

DOI

2020

Double intermediate bonding layers for the fabrication of high-quality silicon-on-insulator-based exfoliated Ge film with excellent high-temperature characteristics

Journal of Physics D: Applied Physics

DOI

2019

横向收集结构锗硅半导体雪崩探测器的设计研究

《中国光学(中英文)》

2019

非晶过渡层Si基半导体材料键合及键合Ge/Si近红外探测器的研究

《厦门大学》

2019

Low-Temperature Fabrication of Wafer-Bonded Ge/Si p-i-n Photodiodes by Layer Exfoliation and Nanosecond-Pulse Laser Annealing

IEEE Transactions on Electron Devices

DOI

2019

Design and research of Ge/Si avalanche photodiode with a specific lateral carrier collection structure

DOI

2019

Spin-on doping of phosphorus on Ge with a 9 nm amorphous Si capping layer to achieve n+/p  shallow junctions through rapid thermal annealing

Journal of Physics D: Applied Physics

DOI

2018

Electrical properties of Si/Si bonded wafers based on an amorphous Ge interlayer

Journal of Semiconductors

DOI

2018

Interface characteristics and electrical transport of Ge/Si heterojunction fabricated by low-temperature wafer bonding

Journal of Physics D: Applied Physics

DOI

2018

Interface characteristics of different bonded structures fabricated by low-temperature a-Ge wafer bonding and the application of wafer-bonded Ge/Si photoelectric device

Journal of Materials Science

DOI

2018

Low-temperature oxide-free silicon and germanium wafer bonding based on a sputtered amorphous Ge

DOI

2018

Temperature-dependent interface characteristic of silicon wafer bonding based on an amorphous germanium layer deposited by DC-magnetron sputtering

DOI

2017

Method for realizing Si-Si bonding through adoption of amorphous germanium film

2017

Geiger mode theoretical study of a wafer-bonded Ge on Si single-photon avalanche photodiode

DOI

2017

Interface State Calculation of the Wafer-Bonded Ge/Si Single-Photon Avalanche Photodiode in Geiger Mode

IEEE Transactions on Electron Devices

DOI

2017

Innovative Ge–SiO2 bonding based on an intermediate ultra-thin silicon layer

Journal of Materials Science: Materials in Electronics

DOI

2017

Bubble evolution mechanism and stress-induced crystallization in low-temperature silicon wafer bonding based on a thin intermediate amorphous Ge layer

DOI

2017

Design of wafer-bonded structures for near room temperature Geiger-mode operation of germanium on silicon single-photon avalanche photodiode.

Applied Optics

DOI

2016

Voltage sharing effect and interface state calculation of a wafer-bonding Ge/Si avalanche photodiode with an interfacial GeO2 insulator layer.

Optics Express

DOI

2015

Morphological evolution of self-assembled SiGe islands based on a mixed-phase pre-SiGe island layer grown by ion beam sputtering deposition

DOI

2015

离子束共溅射SiGe纳米岛的演变行为及二次生长机制研究

《云南大学》

2014

Numerical simulation of the performance of the a-Si:H/a-SiGe:H/a-SiGe:H tandem solar cell

DOI

2017

a-Ge的亲水性及其在Si-Si键合中的应用

《第十二届全国硅基光电子材料及器件研讨会》

2016

Ge/Si单光子探测器的暗计数理论研究

《第十一届全国硅基光电子材料及器件研讨会》

2014

Morphological evolution of self-assembled SiGe islands based a pre-SiGe layergrownby ion beam sputtering deposition

《2014功能材料国际会议》