李学飞

2026

Wafer-scale and doping-tunable p-type semiconducting monolayer WSi2N4 film

National Science Review

DOI

2025

High‐Stability Ultrathin Oxide Transistors via Defect Engineering for High‐Performance Capacitorless DRAM

Advanced Functional Materials

DOI

2025

Dual Modulation of Barrier Width and Height in van der Waals Ferroelectric Tunnel Junctions

The Journal of Physical Chemistry Letters

DOI

2025

The Critical Role of Passivation Layer and Semiconductor Interface on the Hydrogen Stability of ALD IGZO Transistors

IEEE Transactions on Electron Devices

DOI

2025

First Demonstration of Top T-Gate Beol-Compatible Indium-Oxide RF Transistors with Record Maximum Oscillation Frequency of 70 GHz

DOI

2025

High-Performance Atomic-Layer-Deposited Dual-Gate InGaO Thin-Film Transistors

Nano Letters

DOI

2024

CMOS Logic and Capacitorless DRAM by Stacked Oxide Semiconductor and Poly-Si Transistors for Monolithic 3-D Integration

IEEE Transactions on Electron Devices

DOI

2023

Rhombohedral-stacked bilayer transition metal dichalcogenides for high-performance atomically thin CMOS devices

Science Advances

DOI

2023

Ultrashort channel chemical vapor deposited bilayer WS2 field-effect transistors

Applied Physics Reviews

DOI

2022

Van der Waals Epitaxial Trilayer MoS2 Crystals for High‐Speed Electronics

Advanced Functional Materials

DOI

2022

Top-Gate CVD WSe2 pFETs with Record-High Id~594 μA/μm, Gm~244 μS/μm and WSe2/MoS2 CFET based Half-adder Circuit Using Monolithic 3D Integration

International Electron Devices Meeting

DOI

2022

Improved Self-Heating in Short-Channel Monolayer WS2 Transistors with High-Thermal Conductivity BeO Dielectrics.

Nano letters (Print)

DOI

2022

BEOL-Compatible High-Performance a-IGZO Transistors with Record high Ids,max = 1207 μA/μm and on-off ratio exceeding 1011 at Vds = 1V

International Electron Devices Meeting

DOI

2022

Nonvolatile Logic and Ternary Content‐Addressable Memory Based on Complementary Black Phosphorus and Rhenium Disulfide Transistors (Adv. Mater. 48/2022)

Advances in Materials

DOI

2022

High-Performance Bilayer WSe2 pFET with Record Ids = 425 μA/μm and Gm = 100 at μS/μm Vds = -1 V By Direct Growth and Fabrication on SiO2 Substrate

International Electron Devices Meeting

DOI

2022

Flexible synaptic floating gate devices with dual electrical modulation based on ambipolar black phosphorus

iScience

DOI

2021

Improved Low-Frequency Noise in Recessed-Gate E-Mode AlGaN/GaN MOS-HEMTs Under Electrical and Thermal Stress

IEEE Journal of the Electron Devices Society

DOI

2021

Demonstration of Vertically-stacked CVD Monolayer Channels: MoS2 Nanosheets GAA-FET with Ion>700 µA/µm and MoS2/WSe2 CFET

International Electron Devices Meeting

DOI

2021

Improved low-frequency noise in CVD bilayer MoS2 field-effect transistors

DOI

2021

High-performance n-type transistors based on CVD-grown large-domain trilayer WSe2

APL Materials

DOI

2021

Tunable synaptic devices based on ambipolar MoTe2 transistor

IEEE Electron Devices Technology and Manufacturing Conference

DOI

2021

Nonvolatile Logic and Ternary Content‐Addressable Memory Based on Complementary Black Phosphorus and Rhenium Disulfide Transistors

Advances in Materials

DOI

2021

Performance Optimization of Atomic Layer Deposited ZnO Thin-Film Transistors by Vacuum Annealing

IEEE Electron Device Letters

DOI

2020

High-Frequency Performance of MoS2 Transistors at Cryogenic Temperatures

IEEE International Conference on Solid-State and Integrated Circuit Technology

DOI

2020

Tunable 1/f Noise in CVD Bernal-Stacked Bilayer Graphene Transistors.

ACS Applied Materials and Interfaces

DOI

2020

Reconfigurable Logic‐in‐Memory and Multilingual Artificial Synapses Based on 2D Heterostructures

Advanced Functional Materials

DOI

2020

10-nm Channel Length Indium-Tin-Oxide transistors with Ion = 1860 μA/μm, Gm = 1050 μS/μm at Vds = 1 V with BEOL Compatibility

International Electron Devices Meeting

DOI

2020

A transverse tunnelling field-effect transistor made from a van der Waals heterostructure

Nature Electronics

DOI

2020

Low-Frequency Noise in III–V, Ge, and 2D Transistors

DOI

2019

Improved Current Collapse in Recessed AlGaN/GaN MOS-HEMTs by Interface and Structure Engineering

IEEE Transactions on Electron Devices

DOI

2019

Improved Interface Properties and Dielectric Breakdown in Recessed AlGaN/GaN MOS-HEMTs Using HfSiO $_{{x}}$ as Gate Dielectric

IEEE Electron Device Letters

DOI

2019

BEOL Compatible 15-nm Channel Length Ultrathin Indium-Tin-Oxide Transistors with Ion = 970 μA/μm and On/off Ratio Near 1011 at Vds = 0.5 V

International Electron Devices Meeting

DOI

2019

High Performance Gigahertz Flexible Radio Frequency Transistors with Extreme Bending Conditions

International Electron Devices Meeting

DOI

2019

Improvement of Conversion Loss of Resistive Mixers Using Bernal-Stacked Bilayer Graphene

IEEE Electron Device Letters

DOI

2019

High-speed black phosphorus field-effect transistors approaching ballistic limit

Science Advances

DOI

2019

Nanometre-thin indium tin oxide for advanced high-performance electronics

Nature Materials

DOI

2019

High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition

IEEE Electron Device Letters

DOI

2019

Wafer Scale Mapping and Statistical Analysis of Radio Frequency Characteristics in Highly Uniform CVD Graphene Transistors

Advanced Electronic Materials

DOI

2019

Negative transconductance and negative differential resistance in asymmetric narrow bandgap 2D-3D heterostructures.

Nanoscale

DOI

2018

Scalable high performance radio frequency electronics based on large domain bilayer MoS2

Nature Communications

DOI

2018

Interface properties study on SiC MOS with high-k hafnium silicate gate dielectric

AIP Advances

DOI

2018

Channel Engineering of Normally-OFF AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High- $\kappa$ Dielectric

IEEE Electron Device Letters

DOI

2018

High-performance transistors based on monolayer CVD MoS2 grown on molten glass

Applied Physics Letters

DOI

2018

Tunable Low-Frequency Noise in Dual-Gate MoS2 Transistors

IEEE Electron Device Letters

DOI

2018

High-Performance CVD Bernal-Stacked Bilayer Graphene Transistors for Amplifying and Mixing Signals at High Frequencies.

ACS Applied Materials and Interfaces

DOI

2018

High Performance Double-Gate Graphene Radio-Frequency Transistors

International Conference on Electron Devices and Solid-State Circuits

DOI

2018

Black Phosphorus Radio Frequency Electronics at Cryogenic Temperatures

Advanced Electronic Materials

DOI

2018

High Performance Black Phosphorus Electronic and Photonic Devices with HfLaO Dielectric

IEEE Electron Device Letters

DOI

2018

Anomalous Temperature Dependence in Metal-Black Phosphorus Contact.

Nano letters (Print)

DOI

2018

Optimized Transport Properties in Lithium Doped Black Phosphorus Transistors

IEEE Electron Device Letters

DOI

2018

High-performance two-dimensional transistors and circuits

IEEE International Conference on Solid-State and Integrated Circuit Technology

DOI

2018

Performance and Reliability Improvement under High Current Densities in Black Phosphorus Transistors by Interface Engineering.

ACS Applied Materials and Interfaces

DOI

2018

Optimized Transport of Black Phosphorus Top Gate Transistors Using Alucone Dielectrics

IEEE Electron Device Letters

DOI

2017

Effect of Dielectric Interface on the Performance of MoS2 Transistors.

ACS Applied Materials and Interfaces

DOI

2017

Short-Channel Graphene Mixer With High Linearity

IEEE Electron Device Letters

DOI

2017

Effects of Nitrogen and Hydrogen Codoping on the Electrical Performance and Reliability of InGaZnO Thin-Film Transistors.

ACS Applied Materials and Interfaces

DOI

2017

Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices

DOI

2017

Multifunctional high-performance van der Waals heterostructures.

Nature Nanotechnology

DOI

2017

Gigahertz frequency doubler based on millimeter-scale single-crystal graphene

DOI

2017

High field transport of high performance black phosphorus transistors

DOI

2016

Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors.

Nanoscale

DOI

2016

Broadband Black‐Phosphorus Photodetectors with High Responsivity

Advances in Materials

DOI

2016

Development of two-dimensional materials for electronic applications

Science China Information Sciences

DOI

2016

電子応用のための2次元材料の開発【Powered by NICT】

2015

Performance Potential and Limit of MoS2 Transistors

Advances in Materials

DOI

2015

Noise in Graphene Superlattices Grown on Hexagonal Boron Nitride.

ACS Nano

DOI

2014

Low temperature study of GaAs MOSFETs with atomic layer epitaxial La2O3

IEEE International Conference on Solid-State and Integrated Circuit Technology

DOI

2014

Low frequency 1/f noise in graphene FETs

IEEE International Conference on Solid-State and Integrated Circuit Technology

DOI

2013

Effects of forming gas anneal on ultrathin InGaAs nanowire metal-oxide-semiconductor field-effect transistors

DOI

2016

Interface properties study on SiC MOS with high-κ Al2O3 gate dielectric

IEEE International Conference on Solid-State and Integrated Circuit Technology

DOI

2026

Investigation of Hopping Conduction and Its Impact on the Subthreshold and Transition Region Transport in Oxide Semiconductor Transistors by Magneto-Transport Measurements

arXiv preprint