冯志红

期刊论文

1. 毛泽坤，高学栋，周幸叶，蔚翠，冯志红（2026）. 用于氮空位色心量子操纵的可调谐宽带可重构天线设计. 《太赫兹科学与电子信息学报》.
2. 程奕赫，马孟宇，刘庆彬，何泽召，蔚翠，冯志红（2026）. 金刚石表面损伤层及其对外延金刚石性能的影响研究. 《电子学报》.
3. 程奕赫，李鹏雨，刘庆彬，何泽召，蔚翠，冯志红，周承敏（2026）. 立方氮化铝(111)/金刚石(111)异质结特性的第一性原理计算. 《真空电子技术》.DOI
4. 许婧，杨大宝，刘波，周幸叶，冯志红（2026）. 一种D波段高功率波导型单行载流子光电二极管模块. 《半导体技术》.
5. 翟晓岚，谢龙安，冯志红，向福建（2026）. 不同施肥方案对晚熟青脆李产量及品质的影响. 《农业科技通讯》.
6. 段莹莹，宋晓飞，谢洋，冯志红，贾建华，王琛，张姣姣，李晓丽（2025）. 不同砧木品种对设施黄瓜产量和品质的影响. 《现代农村科技》.
7. 张栋曜，周幸叶，郭红雨，余浩，吕元杰，冯志红（2025）. 室温晶圆键合的金刚石基GaN HEMT制备与性能. 《半导体技术》.DOI
8. 杨大宝，刘波，周幸叶，许婧，邢东，冯志红（2025）. X波段高功率InP/InGaAs单行载流子光电二极管. 《半导体技术》.DOI
9. 胡松祥，宋旭波，顾国栋，刘庆彬，冯志红（2025）. 一种波导内阻抗匹配的0.4THz宽带倍频器. 《半导体技术》.DOI
10. 盛百城，宋旭波，顾国栋，张立森，刘帅，万悦，魏碧华，李鹏雨，郝晓林，梁士雄，冯志红（2024）. 260 GHz GaN高功率三倍频器设计. 《太赫兹科学与电子信息学报》.
11. 顾国栋，王国瑾，朱忠博，郝晓林，张立森，宋旭波，徐鹏，梁士雄，冯志红（2024）. 基于GCPW的220GHz砷化镓芯片基波混频电路. 《空间电子技术》.
12. 盛百城，刘庆彬，何泽召，李鹏雨，蔚翠，冯志红（2024）. SiC基GaN上多晶金刚石散热膜生长及其影响. 《半导体技术》.
13. 杨大宝，邢东，赵向阳，刘波，冯志红（2024）. 110～200GHz频段InP单行载流子光电二极管. 《半导体技术》.
14. 蔚翠，冯志红，何泽召，周闯杰，郭建超，马孟宇，余浩，刘庆彬，李鹏雨（2024）. 金刚石固态微波功率器件研究进展和展望. 《真空电子技术》.
15. 蒋长宏，赵向阳，吴大勇，邢东，冯志红（2024）. 600 GHz高效率二倍频器. 《微波学报》.
16. 徐鹏，徐辉，王国瑾，张立森，梁士雄，宋旭波，顾国栋，郝晓林，冯志红（2024）. 170GHz二倍频器2路功率合成技术研究. 《空间电子技术》.
17. 郭建超，张雄文，靳士昌，邓冀泽，冯志红（2023）. 电弧法CVD金刚石膜热学性能影响因素分析. 《标准化学报》.
18. 杨大宝，赵向阳，刘波，邢东，冯志红（2023）. 一种E面波导枝节加载型移相器. 《微波学报》.
19. Xing-Ye Zhou, Yuan-Jie Lu, Hongyu Guo, Xu-Bo Song, Yuan-Gang Wang, Shixiong Liang, Ai-Min Bu, Zhihong Feng (2023). High-stability 4H-SiC avalanche photodiodes for UV detection at high temperatures. Chinese Optics Letters (COL).DOI
20. 郭艳敏，杨玉章，冯志红，王元刚，刘宏宇，韩静文（2023）. 阳极刻蚀提升Ga2O3肖特基势垒二极管击穿特性. 《半导体技术》.
21. 李斌，胡秀飞，杨旖秋，王英楠，谢雪健，彭燕，杨祥龙，王希玮，胡小波，徐现刚，冯志红（2023）. 单晶金刚石声子非简谐衰减效应研究. 《人工晶体学报》.
22. 周幸叶，吕元杰，郭红雨，顾国栋，王元刚，梁士雄，卜爱民，冯志红 (2023). Analysis of high-temperature performance of 4H-SiC avalanche photodiodes in both linear and Geiger modes. Chinese Physics B.
23. 徐森锋，宋旭波，顾国栋，梁士雄，许婧，周幸叶，张立森，郝晓林，林勇，冯志红（2023）. 多阳极220GHz倍频器单片设计. 《太赫兹科学与电子信息学报》.
24. Li-Sen Zhang, Guodong Gu, Shixiong Liang, Yuanjie Lv, Xu-Bo Song, Peng Xu, Xiaolin Hao, Ai-Min Bu, Zhihong Feng (2023). High-Efficiency GaN/SiC Doubler Terahertz Monolithic Integrated Circuit at 175 GHz. IEEE Electron Device Letters.DOI
25. Xu-Bo Song, Yuanjie Lv, Cheng Guo, Guodong Gu, Li-Sen Zhang, Yu-Tong Wang, Yuan-Gang Wang, Weile An, T. Han, Xiaolin Hao, Ai-Min Bu, Shixiong Liang, Xiaoming Chen, Anxue Zhang, Zhihong Feng (2023). A 170–230 GHz High-Power Frequency Doubler Based on a GaAs MMIC Process. IEEE Microwave and Wireless Technology Letters.DOI
26. Hong-Yu Liu, Yuan-Gang Wang, Yuanjie Lv, Shida Han, T. Han, S. Dun, Hongyu Guo, Ai-Min Bu, Zhihong Feng (2023). 10-kV Lateral β-Ga₂O₃ MESFETs With B Ion Implanted Planar Isolation. IEEE Electron Device Letters.DOI
27. Xing-Ye Zhou, Yuanjie Lv, Hongyu Guo, Guodong Gu, Yuan-Gang Wang, Shixiong Liang, Ai-Min Bu, Zhihong Feng (2023). Impact of surface bump defects in 4H-SiC epi-layer material on the performance of avalanche photodiodes. Symposium on Novel Photoelectronic Detection Technology and Application.DOI
28. Feihong Wu, Yuan-Gang Wang, Guangzhong Jian, Guang-Wei Xu, Xuanze Zhou, Wei Guo, Jia-Hong Du, Qi Liu, S. Dun, Zhaoan Yu, Yuanjie Lv, Zhihong Feng, Shu-Jun Cai, Shibing Long (2023). Superior Performance β-Ga2O3 Junction Barrier Schottky Diodes Implementing p-NiO Heterojunction and Beveled Field Plate for Hybrid Cockcroft–Walton Voltage Multiplier. IEEE Transactions on Electron Devices.DOI
29. Xuan Li, Shiwei Feng, Zhihong Feng, Shi-Jie Pan, Yuanjie Lv, Kun Bai, Xiaozhuang Lu, Junhua Qin, Ya-Min Zhang (2023). A thermal boundary resistance measurement method based on a designed chip with the heat source separated from the temperature sensor. Applied Physics Letters.DOI
30. Ya-Zhou Dong, Hua-Jie Liang, Shixiong Liang, Hongji Zhou, Jianghuai Yu, Hai-Long Guo, Hongxin Zeng, Zhihong Feng, Ya-Xin Zhang (2023). High-Efficiency GaN Frequency Doubler Based on Thermal Resistance Analysis for Continuous Wave Input. IEEE Transactions on Electron Devices.DOI
31. Xiaozhu Wen, Hao Yang, Zi-Xian Wu, Yang Yu, Guanghua Shi, Zhen Wang, Xu-Bo Song, Shixiong Liang, Guodong Gu, Yuanjie Lv, Zhihong Feng, Yu Zheng, Anxue Zhang, Cheng Guo (2023). A 100–180-GHz Coaxial Frequency Tripler Based on Copper Additive Manufacturing. IEEE transactions on microwave theory and techniques.DOI
32. T. Han, Yuan-Gang Wang, Yuanjie Lv, S. Dun, Hong-Yu Liu, Ai-Min Bu, Zhihong Feng (2023). 2.83-kV double-layered NiO/β-Ga2O3 vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm2. Journal of Semiconductors.DOI
33. 杨大宝，赵向阳，刘波，邢东，冯志红（2022）. 220GHz GaAs单片集成分谐波混频器. 《半导体技术》.
34. 杨大宝，张立森，徐鹏，赵向阳，顾国栋，梁士雄，吕元杰，冯志红（2022）. 340 GHz固定调谐分谐波混频器. 《红外与激光工程》.
35. 马春雷，宋旭波，梁士雄，顾国栋，周幸叶，冯志红（2022）. 200～220 GHz平衡式高效率二倍频器. 《半导体技术》.
36. 崔朝探，陈政，郭建超，赵晓雨，何泽召，杜鹏搏，冯志红（2022）. 金刚石在GaN功率放大器热设计中的应用. 《半导体技术》.
37. 王维，蔚翠，何泽召，周闯杰，郭建超，马孟宇，高学栋，冯志红（2022）. h-BN/Al2O3栅介质氢终端金刚石场效应晶体管. 《半导体技术》.
38. 余浩，周闯杰，蔚翠，何泽召，宋旭波，郭建超，冯志红（2022）. 氢终端金刚石MOSFET击穿机制的仿真研究. 《半导体技术》.
39. Yuan-Gang Wang, H. Gong, Yuanjie Lv, Xingchang Fu, S. Dun, T. Han, Hong-Yu Liu, Xing-Ye Zhou, Shixiong Liang, Jiandong Ye, Rong Zhang, Ai-Min Bu, Shu-Jun Cai, Zhihong Feng (2022). 2.41 kV Vertical P-Nio/n-Ga2O3 Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm2. IEEE transactions on power electronics.DOI
40. Cui Yu, Zezhao He, Xubo Song, Xue-Dong Gao, Qing-Bin Liu, Yan-Hui Zhang, Guanghui Yu, T. Han, Ai-Min Bu, Shu-Jun Cai, Zhihong Feng (2022). Two-Stage Ku-Band Graphene Low Noise Amplifier MMIC With Improved Fabrication Process. IEEE Transactions on Electron Devices.DOI
41. Ya-Zhou Dong, Hua-Jie Liang, Shixiong Liang, Wei Kou, Xiaolin Hao, Hongji Zhou, Hongxin Zeng, Zhihong Feng, Ziqiang Yang, Ya-Xin Zhang (2022). A Meta-Structure-Based Frequency Doubler With Low Input Power. IEEE Electron Device Letters.DOI
42. Ya-Xin Zhang, Ke-Sen Ding, Hongxin Zeng, Wei Kou, Tianchi Zhou, Hongji Zhou, S. Gong, Zhang Ting, Lan Wang, Shixiong Liang, F. Lan, Ya-Zhou Dong, Zhihong Feng, Yu-Bing Gong, Ziqiang Yang, D. Mittleman (2022). Ultra-fast modulation of Terahertz wave based on on-chip dual-layer near field coupling. Optica.DOI
43. Cheng Guo, Xiaozhu Wen, Zi-Xian Wu, Yang Yu, Wenxuan Wu, Anxue Zhang, Xubo Song, Shixiong Liang, Zhihong Feng (2022). A 135–150 GHz High-Power Frequency Tripler With Filtering Matching Network. IEEE Microwave and Wireless Components Letters.DOI
44. Zhuolin Jiang, Yuxi Wei, Yuanjie Lv, Jie Wei, Yuan-Gang Wang, Juan Lu, Hong-Yu Liu, Zhihong Feng, Hong Zhou, Jin-Cheng Zhang, Guang-Wei Xu, Shibing Long, Xiao-Rong Luo (2022). Experimental Investigation on Threshold Voltage Instability for β-Ga2O3 MOSFET Under Electrical and Thermal Stress. IEEE Transactions on Electron Devices.DOI
45. Shixiong Liang, Guodong Gu, Hongyu Guo, Li-Sen Zhang, Xu-Bo Song, Yuanjie Lv, Ai-Min Bu, Zhihong Feng (2022). Homoepitaxial GaN terahertz planar Schottky barrier diodes. Journal of Physics D: Applied Physics.DOI
46. W. Miao, Fei-Ming Li, Qiang-Hui Luo, Qingcheng Wang, Jia-Qiang Zhong, Zheng Wang, K. Zhou, Yuan Ren, Wen Zhang, Jing Li, Shengcai Shi, Cui Yu, Zezhao He, Qing-Bin Liu, Zhihong Feng (2022). A terahertz detector based on superconductor-graphene-superconductor Josephson junction. Carbon.DOI
47. Zhuolin Jiang, Jie Wei, Yuanjie Lv, Yuxi Wei, Yuan-Gang Wang, Juan Lu, Hong-Yu Liu, Zhihong Feng, Hong Zhou, Jin-Cheng Zhang, Guang-Wei Xu, Shibing Long, Xiao-Rong Luo (2022). Nonuniform Mechanism for Positive and Negative Bias Stress Instability in β-Ga2O3 MOSFET. IEEE Transactions on Electron Devices.DOI
48. 毋自贤，郭诚，温潇竹，宋旭波，梁士雄，顾国栋，张立森，吕元杰，张安学，冯志红（2021）. 基于片上肖特基二极管的高功率三倍频器设计. 《红外与毫米波学报》.
49. Chen Wu, Xudong Fang, Zhihong Feng, Q. Kang, Yuanjie Lv, Yue-Fei Yan, Zhuangde Jiang (2021). Ohmic Contact Characteristics of Silicon Carbide-based MEMS Devices. IEEE International Conference on Nano/Micro Engineered and Molecular Systems.DOI
50. Zhaofeng Sun, Yuan-Gang Wang, Yuanjie Lv, S. Dun, Hong-Yu Liu, Zhihong Feng, Shu-Jun Cai (2021). High Performance $\beta$-Ga2O3 Vertical Rectifier With Double Step Structure Termination Using Thermally Oxided TiOx Dielectrics. IEEE Electron Devices Technology and Manufacturing Conference.DOI
51. Xuan Li, Shiwei Feng, Zhihong Feng, Yuanjie Lv, Yuan-Gang Wang, Xin He, K. Bai, Shi-Jie Pan (2021). Characterization of thermal-resistance in Ga2O3 Schottky barrier diodes with temperature-sensitive electrical parameters. Semiconductor Science and Technology.DOI
52. Yong Ma, Jincheng He, Yi Liu, Longliang Yang, Bin Liu, Xing-Ye Zhou, Shixiong Liang, Zhihong Feng (2021). A Microscopic Deep UV Imaging System with a Single Detector. Progress in Electromagnetics Research Symposium.DOI
53. Yuxi Wei, Xiao-Rong Luo, Yuan-Gang Wang, Juan Lu, Zhuo-Lin Jiang, Jie Wei, Yuanjie Lv, Zhihong Feng (2021). Experimental Study on Static and Dynamic Characteristics of Ga2O3 Schottky Barrier Diodes With Compound Termination. IEEE transactions on power electronics.DOI
54. Peng Lin, Nannan Niu, Ran Zuo, Yulong Fang, Zhihong Feng (2021). Density functional theory study on surface adsorptions in AlN metalorganic vapor phase epitaxy process. Applications of Surface Science.DOI
55. Li-Sen Zhang, Shixiong Liang, Yuanjie Lv, Da-Bao Yang, Xingchang Fu, Xubo Song, Guodong Gu, Peng Xu, Yan-Min Guo, Ai-Min Bu, Zhihong Feng, Shu-Jun Cai (2021). High-Power 300 GHz Solid-State Source Chain Based on GaN Doublers. IEEE Electron Device Letters.DOI
56. Yuanjie Lv, Yuan-Gang Wang, Xing-Chang Fu, S. Dun, Zhaofeng Sun, Hong-Yu Liu, Xing-Ye Zhou, Xubo Song, Kui Dang, Shixiong Liang, Jin-Cheng Zhang, Hong Zhou, Zhihong Feng, Shu-Jun Cai, Yue Hao (2021). Demonstration of β-Ga2O3 Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm2 or a 5A/700 V Handling Capabilities. IEEE transactions on power electronics.DOI
57. Ling-Xuan Qian, Zhiwen Gu, Xiao-Dong Huang, Hong-Yu Liu, Yuanjie Lv, Zhihong Feng, Wanli Zhang (2021). Comprehensively Improved Performance of β-Ga2O3 Solar-Blind Photodetector Enabled by a Homojunction with Unique Passivation Mechanisms. ACS Applied Materials and Interfaces.DOI
58. Yong Ma, Yi Liu, Jincheng He, Longliang Yang, Li-Hao Yang, W. Pan, Zhen Zhang, Huan Yang, Xing-Ye Zhou, Shixiong Liang, Zhihong Feng, Jiacheng Liu, Yuhang Han, Q. Xu (2021). Banknotes anti-counterfeiting system based on THz-TDS confocal imaging. Applied Optics and Photonics China.DOI
59. Xubo Song, Shixiong Liang, Yuanjie Lv, Zhenpeng Zhang, Li-Sen Zhang, Xingchang Fu, Yan-Min Guo, Guodong Gu, Yuan-Gang Wang, Yuan Fang, Ai-Min Bu, Shu-Jun Cai, Zhihong Feng (2021). GaN-Based Frequency Doubler With Pulsed Output Power Over 1 W at 216 GHz. IEEE Electron Device Letters.DOI
60. H. Gong, Zheng-Peng Wang, Xinxin Yu, Fang-Fang Ren, Yi Yang, Yuanjie Lv, Zhihong Feng, Shu-Lin Gu, Rong Zhang, You-Dou Zheng, Jiandong Ye (2021). Field-Plated NiO/Ga2O3 p-n Heterojunction Power Diodes With High-Temperature Thermal Stability and Near Unity Ideality Factors. IEEE Journal of the Electron Devices Society.DOI
61. Junjie Yang, Jianhao Ren, Xu-Sheng Tang, Zhihong Feng (2021). An Equivalent Circuit Model for Uni-Traveling-Carrier Photodiode. International Conference on Electronics and Electrical Engineering Technology.DOI
62. Yong Ma, Yi Liu, Jincheng He, Longliang Yang, Li-Hao Yang, Bo-Wen Liu, Hui-Yun Xiao, W. Pan, Xing-Ye Zhou, Shixiong Liang, Zhihong Feng (2021). THz-TDS Confocal Imaging of Banknote Anti-counterfeiting Labels. International Conference on Infrared, Millimeter, and Terahertz Waves.DOI
63. Hongxin Zeng, Hua-Jie Liang, Ya-Xin Zhang, Lan Wang, Shixiong Liang, S. Gong, Zheng Li, Ziqiang Yang, Xilin Zhang, F. Lan, Zhihong Feng, Yu-Bing Gong, D. Mittleman (2021). Author Correction: High-precision digital terahertz phase manipulation within a multichannel field perturbation coding chip. Nature Photonics.DOI
64. Xue-Dong Gao, Cui Yu, Zezhao He, Jian-Chao Guo, Qing-Bin Liu, Chuang-Ji Zhou, Shu-Jun Cai, Zhihong Feng (2021). Contaminant-Free Wafer-Scale Assembled h-BN/Graphene van der Waals Heterostructures for Graphene Field-Effect Transistors.DOI
65. Yan-Li Mao, Ran Zuo, Yulong Fang, Ji-Yun Yin, Yan-Ming Guo, Zhihong Feng (2021). Influence of inlet structures of planetary reactor on gas reaction path in AlN-MOVPE process.DOI
66. Cui Yu, Zezhao He, Xubo Song, Xue-Dong Gao, Qing-Bin Liu, Yan-Hui Zhang, Guanghui Yu, T. Han, Chen Liu, Zhihong Feng, Shu-Jun Cai (2021). Field Effect Transistors and Low Noise Amplifier MMICs of Monolayer Graphene. IEEE Electron Device Letters.DOI
67. 贺栾劲芝，宋晓飞，李晓丽，闫立英，孙成振，冯志红（2020）. 黄瓜果实性状突变体的筛选与评价. 《北方园艺》.
68. R. Zhou, Cui Yu, Chuang-Ji Zhou, Jian-Chao Guo, Zezhao He, Yanfeng Wang, Feng Qiu, Hong-Xing Wang, Shu-Jun Cai, Zhihong Feng (2020). Performance of hydrogenated diamond field-effect transistors on single and polycrystalline diamond. Journal of Semiconductors.DOI
69. Xing-Ye Zhou, Xin Tan, Yuanjie Lv, Yuan-Gang Wang, Jia Li, Shixiong Liang, Zi-Hui Zhang, Zhihong Feng, Shu-Jun Cai (2020). 128-pixel arrays of 4H-SiC UV APD with dual-frequency PECVD SiNx passivation. Optics Express.DOI
70. Shixiong Zhang, Yunfan Zhang, N. Tang, Wei-Ying Wang, Xinjuan Chen, Lei Fu, Chen-Guang He, Yuanjie Lv, Zhihong Feng, Fu-Jun Xu, Tong-Jun Yu, W. Ge, B. Shen (2020). Compressive strain induced enhancement of transverse-electric polarized ultraviolet light emission for AlGaN quantum wells. Superlattices and Microstructures.DOI
71. Yuan-Gang Wang, Shu-Jun Cai, Ming Liu, Yuanjie Lv, S. Long, Xing-Ye Zhou, Xubo Song, Shixiong Liang, T. Han, Xin Tan, Zhihong Feng (2020). High-Voltage ( $\overline{\text{2}}01$ ) $\beta$ -Ga2O3 Vertical Schottky Barrier Diode With Thermally-Oxidized Termination. IEEE Electron Device Letters.DOI
72. Yuanjie Lv, Hong-Yu Liu, Yuan-Gang Wang, Xing-Chang Fu, Chun-Wang Ma, Xubo Song, Xing-Ye Zhou, Yan-Ni Zhang, Pengfei Dong, Hang-Hai Du, Shixiong Liang, T. Han, Jin-Cheng Zhang, Zhihong Feng, Hong Zhou, Shu-Jun Cai, Yue Hao (2020). Oxygen annealing impact on β-Ga2O3 MOSFETs: Improved pinch-off characteristic and output power density.DOI
73. Xudong Fang, Chen Wu, Yulong Zhao, Zhuangde Jiang, W. Rong, Zhihong Feng, Yuanjie Lv (2020). A 350 °C piezoresistive n-type 4H-SiC pressure sensor for hydraulic and pneumatic pressure tests. Journal of Micromechanics and Microengineering.DOI
74. Xing-Ye Zhou, Xin Tan, Yuanjie Lv, Yuan-Gang Wang, Zhihong Feng, Shu-Jun Cai (2020). Impact of Resistance on the Performance of Ultraviolet 4H-SiC Avalanche Photodiodes. IEEE Transactions on Electron Devices.DOI
75. Zheng Zhen, Ran Hao, D. Xing, Zhihong Feng, Shang-Zhong Jin, Er-Ping Li (2020). Back-illuminated modified uni-traveling-carrier photo-diodes (MUTC-PDs) with 3-dB bandwidth over 40 GHz. International Conference on Optoelectronic and Microelectronic Technology and Application.DOI
76. T. Liang, M. Habib, Han Xiao, Shuang Xie, Yuhan Kong, Cui Yu, H. Iwai, D. Fujita, N. Hanagata, Hongzheng Chen, Zhihong Feng, Ming-Sheng Xu (2020). Intrinsically Substitutional Carbon Doping in CVD-Grown Monolayer MoS2 and the Band Structure Modulation.DOI
77. D. Jiang, Liuchen Chang, Dan Zheng, Yu-Hui Kang, Han Cao, Xiao-Guang Chai, Tao Fan, Hai-Dong Yan, Pei-Jie Liang, Yun-Hui Mei, Zhihong Feng (2020). Wide Bandgap Power Electronic Devices and Applications.
78. Xin Tan, Xing-Ye Zhou, Yuanjie Lv, Yuan-Gang Wang, Shixiong Liang, Zhihong Feng (2020). The impact of quenching resistor on single photon detection performance of 4H-SiC APD.DOI
79. Hai-Dong Yan, Pei-Jie Liang, Yun-Hui Mei, Zhihong Feng (2020). Brief review of silver sinter-bonding processing for packaging high-temperature power devices. Chinese Journal of Electrical Engineering.DOI
80. Chang-Jian Zhou, Shou-Yong Zhang, Z. Lv, Zichao Ma, Cui Yu, Zhihong Feng, M. Chan (2020). Self-driven WSe2 photodetectors enabled with asymmetrical van der Waals contact interfaces. npj 2D Materials and Applications.DOI
81. Cui Yu, Qing-Bin Liu, Zezhao He, Xue-Dong Gao, E. Wu, Jian-Chao Guo, Chuang-Ji Zhou, Zhihong Feng (2020). Epitaxial graphene gas sensors on SiC substrate with high sensitivity. Journal of Semiconductors.DOI
82. Xue-Dong Gao, Cui Yu, Zezhao He, Qing-Bin Liu, Jian-Chao Guo, Chuang-Ji Zhou, Hongyu Guo, Shu-Jun Cai, Zhihong Feng (2020). Fast growth of single-crystal graphene on Cu Ni substrate by surface oxygen supply. Diamond and related materials.DOI
83. Xing-Ye Zhou, Xin Tan, Yuanjie Lv, Yuan-Gang Wang, Jia Li, Xubo Song, Shixiong Liang, Zhihong Feng, Shu-Jun Cai (2020). Single-Photon-Counting Performance of 4H-SiC Avalanche Photodiodes With a Wide-Range Incident Flux. IEEE Photonics Technology Letters.DOI
84. Zezhao He, Cui Yu, Qing-Bin Liu, Xubo Song, Xue-Dong Gao, Jian-Chao Guo, Chuang-Ji Zhou, Shu-Jun Cai, Zhihong Feng (2020). High temperature RF performances of epitaxial bilayer graphene field-effect transistors on SiC substrate.DOI
85. S. Gong, Lan Wang, Ya-Xin Zhang, Ziqiang Yang, Xue-Song Li, Qi-Ye Wen, Zezhao He, Shixiong Liang, Lin Yuan, Cui Yu, Zhihong Feng, Xilin Zhang (2020). Ultra-extraordinary optical transmission induced by cascade coupling of surface plasmon polaritons in composite graphene-dielectric stack. Optics Express.DOI
86. Xin Tan, Yuanjie Lv, Xing-Ye Zhou, Xubo Song, Yuan-Gang Wang, Guodong Gu, Hongyu Guo, Shixiong Liang, Zhihong Feng, Shu-Jun Cai (2020). High performance AlGaN/GaN pressure sensor with a Wheatstone bridge circuit.DOI
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276. Yuan-Jie Lv, Zhaojun Lin, L. Meng, C. Luan, Zhi-Fang Cao, Ying-xia Yu, Zhihong Feng, Zhan-Guo Wang (2012). Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors. Nanoscale Research Letters.DOI
277. Guo-Hao Yu, Yong Cai, Yue Wang, Zhi-Hua Dong, Guodong Gu, Fei Yang, Zhihong Feng, Bao-Shun Zhang（2012）. 关态耐压1000V的AlGaN/GaN HEMT器件.
278. Jiangfeng Du, Xin-Chuang Zhang, Zhihong Feng, S. Dun, Zi-Qi Zhao, Jiang-Long Yin, Kun-Hua Ma, Y. Pu (2012). Correlation between electrical properties degradation and short-channel effects in Nano-gate AlGaN/GaN HEMTs. International Workshop on Microwave and Millimeter Wave Circuits and System Technology.DOI
279. Sheng-Gen Liu, Yong Cai, R. Gong, Jinyan Wang, C. Zeng, Wenhua Shi, Zhihong Feng, Jing-Jing Wang, Jia-Yun Yin, C. Wen, H. Qin, Baoshun Zhang (2012). Threshold voltage dependence on channel width in nano-channel array AlGaN/GaN HEMTs.DOI
280. Qi Zhou, Hong-Wei Chen, Chun-Hua Zhou, Zhihong Feng, Shu-Jun Cai, K. Chen (2012). Schottky Source/Drain InAlN/AlN/GaN MISHEMT With Enhanced Breakdown Voltage. IEEE Electron Device Letters.DOI
281. C. Luan, Zhaojun Lin, Zhihong Feng, L. Meng, Yuan-Jie Lv, Zhi-Fang Cao, Ying-xia Yu, Zhan-Guo Wang (2012). Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors.DOI
282. 房玉龙，敦少博，刘波，尹甲运，蔡树军，冯志红 (2012). Extrinsic and intrinsic causes of the electrical degradation of AlGaN/GaN high electron mobility transistors. Journal of Semiconductors.
283. Jia Li, Li Wang, Zhihong Feng, Yu-Meng Cui, Qing-Bin Liu, Shao-Bo 少博 Dun 敦, Shu-Jun Cai (2012). Effect of surface morphology on the electron mobility of epitaxial graphene grown on 0° and 8° Si-terminated 4H-SiC substrates.DOI
284. Zhihong Feng, Bo Liu, Jia-Yun Yin, Jin-Jin Wang, Guodong Gu, S. Dun, Shu-Jun Cai (2012). 10-GHz 4.69-W/mm InAlN/GaN HFET on sapphire substrate.DOI
285. Zhihong Feng, Bo Liu, Jia-Yun Yin, Jin-Jin Wang, Guodong Gu, S. Dun, Shu-Jun Cai (2012). Erratum: 10-GHz 4.69-W/mm InAlN/GaN HFET on sapphire substrate [Phys. Status Solidi C 9, 855–857 (2012)].DOI
286. Guodong Gu, Yong Cai, Zhihong Feng, Yue Wang, Guo-Hao Yu, Zhi-Hua Dong, C. Zeng, Bao-Shun Zhang（2012）. 提高AlGaN/GaN HEMT 关态击穿电压的纳米沟道阵列结构.
287. Sheng-Gen Liu, Yong Cai, Guodong Gu, Jinyan Wang, C. Zeng, Wenhua Shi, Zhihong Feng, H. Qin, Zhi-Qun Cheng, Kevin J. Chen, Baoshun Zhang (2012). Enhancement-Mode Operation of Nanochannel Array (NCA) AlGaN/GaN HEMTs. IEEE Electron Device Letters.DOI
288. Qi Zhou, Hong-Wei Chen, Chun-Hua Zhou, Zhihong Feng, Shu-Jun Cai, K. Chen (2012). Schottky Source/Drain InAlN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistor with High Breakdown Voltage and Low On-Resistance.DOI
289. S. Dun, Yang Jiang, Jing-Qiang Li, Yulong Fang, Jia-Yun Yin, Bo Liu, Jing-Jing Wang, Hong Chen, Zhihong Feng, Shu-Jun Cai (2012). Micro‐Raman spectroscopy observation of field‐induced strain relaxation in AlGaN/GaN heterojunction field‐effect transistors.DOI
290. 谢生，冯志红，刘波，毛陆虹，张世林（2011）. AlInN/GaN高电子迁移率晶体管的研究与进展. 《功能材料》.
291. Sheng Xie, Zhihong Feng, Shilin Zhang, Bo Liu, Lu-hong Mao (2011). DC characteristics of large gate periphery InAlN/GaN HEMT on sapphire substrate. 2011 IEEE International Conference of Electron Devices and Solid-State Circuits.DOI
292. Zhi-Qun Cheng, Qingna Wang, Zhihong Feng, Jian-Bo Song, Jia-Yun Yin (2011). Design and DC parameter extraction of the high linearity Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT. International Conference on Electronics, Communications and Control.DOI
293. Sheng-Gen Liu, Yong Cai, R. Gong, Jinyan Wang, C. Zeng, Wenhua Shi, Zhihong Feng, Jing-Jing Wang, Jia-Yun Yin, Zheng-Wen-Wen P. Cheng, H. Qin, Baoshun Zhang (2011). Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using a Nano-Channel Array Structure.DOI
294. Qing-Bin Liu, Jia Li, Jing-Jing Wang, Bo-Dun Shao, Zhihong Feng (2011). Nucleation Mechanism for Epitaxial Graphene on Si-Terminated SiC (0001) Surfaces.DOI
295. Qi Zhou, Hong-Wei Chen, Chun-Hua Zhou, Zhihong Feng, Shu-Jun Cai, K. Chen (2011). Observation of trap-assisted steep sub-threshold swing in schottky source/drain Al2O3/InAlN/GaN MISHEMT. Device Research Conference.DOI
296. Hong-Liang Pan, Zhi Jin, P. Ma, J. Guo, Xin-Yu Liu, Tianchun Ye, Jia Li, S. Dun, Zhihong Feng (2011). Wafer-Scale Gigahertz Graphene Field Effect Transistors on SiC Substrates.DOI
297. Qi Zhou, Sen Huang, Hong-Wei Chen, Chun-Hua Zhou, Zhihong Feng, Shu-Jun Cai, K. Chen (2011). Schottky source/drain Al2O3/InAlN/GaN MIS-HEMT with steep sub-threshold swing and high ON/OFF current ratio. International Electron Devices Meeting.DOI
298. Zhi-Qun Cheng, Tang Liu, Liwei Jin, Zhihong Feng, Jian-Bo Song, Jia-Yun Yin (2011). Study of millimeter wave ALGaN/AlN/GaN HEMT. International Conference on Electronics, Communications and Control.DOI
299. Hui-Min Shao, Shilin Zhang, Sheng Xie, Lu-hong Mao, Weilian Guo, Xian-Jie Li, Shun-Zheng Yin, Zhihong Feng, Bo Liu (2011). AlGaN-based solar-blind metal-semiconductor-metal photodetectors. 2011 IEEE International Conference of Electron Devices and Solid-State Circuits.DOI
300. Hai-Ou Li, Zhihong Feng, C. Tang, K. Lau (2011). Fabrication of 150-nm T-Gate Metamorphic AlInAs/GaInAs HEMTs on GaAs Substrates by MOCVD. IEEE Electron Device Letters.DOI
301. 王学梅，崔静英，于蓉，谢华，冯志红（2010）. 不同化学农药处理对甜瓜商品性的影响. 《北方园艺》.
302. 姜霞，赵正平，张志国，骆新江，杨瑞霞，冯志红（2010）. 考虑自热效应的AlGaN/GaN高电子迁移率晶体管建模与仿真. 《功能材料与器件学报》.
303. 王学梅，崔静英，于蓉，谢华，冯志红（2010）. 日光温室秋冬茬番茄茎基腐病的发生规律及防治技术. 《北方园艺》.
304. Si-Wen Zhang, Jia-Yun Yin, Zhihong Feng, Mei-Cheng Li, J.-Z. Wang, L.-C. Zhao (2010). Highly uniform sheet resistance of the double-channel AlInN/GaN heterostructure.DOI
305. 张慎好，武春成，赵振忠，冯志红，李晓丽（2009）. 油菜素内酯对菜豆落花落荚作用的研究. 《北方园艺》.
306. 张慎好，赵振忠，武春成，冯志红，李晓丽，陈海菊（2009）. PBO对菜豆产量效应的研究. 《北方园艺》.
307. 冯志红，李晓丽，闫立英，张慎好，王久兴（2009）. 西葫芦遗传基因和育种研究进展. 《北方园艺》.
308. 闫立英，娄丽娜，李晓丽，冯志红，娄群峰，陈劲枫（2009）. 黄瓜种质资源单性结实性评价. 《园艺学报》.
309. Sheng-Yin Xie, Jia-Yun Yin, Sen Zhang, Bo Liu, Wei Zhou, Zhihong Feng (2009). Trap behaviors in AlGaN–GaN heterostructures by C–V characterization.DOI
310. Shuang Zhang, Mei-Cheng Li, Zhihong Feng, Bao-Ting Liu, Jia-Yun Yin, L.-C. Zhao (2009). High electron mobility and low sheet resistance in lattice-matched AlInN/AlN/GaN/AlN/GaN double-channel heterostructure.DOI
311. 李晓丽，闫立英，冯志红，贾银霞（2008）. 黄瓜花粉生活力的研究. 《北方园艺》.
312. 张志国，冯震，杨梦丽，默江辉，宋建博，冯志红，蔡树军，杨克武（2007）. 8GHZ输出功率为34W凹栅AlGaN/GaN HEMT的研究. 《第十六届全国半导体物理学术会议》.
313. 冯震，张志国，王勇，默江辉，冯志红，蔡树军，杨克武（2007）. 8GHz输出功率功率密度为11．7W/mm的凹栅AlGaN/GaN HFET的研究. 《第十六届全国半导体物理学术会议论文摘要集》.
314. Zhihong Feng, Bin Liu, F. Yuan, J.-Y. Yin, D. Liang, Xin Li, Z. Feng, K.-W. Yang, Shu-Jun Cai (2007). Influence of Fe-doping on GaN grown on sapphire substrates by MOCVD.DOI
315. Baoshun Zhang, Hu Liang, Yong Wang, Zhihong Feng, K. Ng, K. Lau (2007). High-performance III-nitride blue LEDs grown and fabricated on patterned Si substrates.DOI
316. Zhihong Feng (2006). Enhanced device performance of III-nitride HEMTs on sapphire substrates by MOCVD.DOI
317. Zhihong Feng, Shu-Jun Cai, K. Chen, K. Lau (2006). Isoelectronic indium-surfactant-doped Al0.3Ga0.7N∕GaN high electron mobility transistors.DOI
318. 谢华，崔静英，王学梅，李程，冯志红（2005）. 宁夏北部引黄灌区蔬菜优良地方品种简介. 《北方园艺》.
319. 冉辛拓，冯志红，于丽辰，韩继成，王广鹏，张新忠（2005）. 利用RAPD方法确认‘重阳红’桃及其芽变. 《园艺学报》.
320. Zhihong Feng, Shujin Cai, K. Chen, K. Lau (2005). AlGaN/GaN HEMTs on Grooved Sapphire Substrate,'6th Int. Conf. on Nitride Semiconductors,(ICNS-6).
321. Zhihong Feng, K. Lau (2005). Enhanced luminescence from GaN-based blue LEDs grown on grooved sapphire substrates. IEEE Photonics Technology Letters.DOI
322. 闫立英，冯志红，史庆文，王久兴，张慎好，轩兴栓，宋士清，李晓丽（2004）. 保护地专用旱黄瓜新品种‘绿岛1号’. 《园艺学报》.DOI
323. 陈汉鑫，王雅英，杨忠耿，黄德贵，林荣耀，冯志红（2004）. 金线莲组织培养快繁技术. 《南方农业学报》.
324. Zhihong Feng, Yu-Gang Zhou, Shu-Jun Cai, K. Lau (2004). Effect of different SiN x Passivation and Their Strain on the Reliability of GaN-Based HEMT Structures.
325. Zhihong Feng, Yu-Gang Zhou, Shu-Jun Cai, K. Lau (2004). Doping Concentration and Structural Dependences of the Thermal Stability of the 2DEG in GaN-Based High-Electron-Mobility Transistor Structures.DOI
326. Zhihong Feng, Yun-Dong Qi, Zhen-Dong Lu, Yu-Gang Zhou, K. Lau (2004). GaN-based blue light-emitting diodes grown and fabricated on patterned sapphire substrates by metalorganic vapor-phase epitaxy.DOI
327. Zhihong Feng, Yu-Gang Zhou, Shu-Jun Cai, K. Lau (2004). Enhanced thermal stability of the two-dimensional electron gas in GaN/AlGaN/GaN heterostructures by Si3N4 surface-passivation-induced strain solidification.DOI
328. 李程，冯志红，李丁仁（2002）. 蔬菜无土栽培发展现状及趋势. 《北方园艺》.
329. 李程，冯志红，李丁仁（2002）. 烟雾剂及其在北方日光温室蔬菜生产中的应用. 《北方园艺》.
330. M. Liao, Zhihong Feng, Chun-Lin Chai, Shaoyan Yang, Zhi-Kai Liu, Zhan-Guo Wang (2002). Violet/blue emission from hydrogenated amorphous carbon films deposited from energetic CH3+ ions and ion bombardment.DOI
331. 冯志红，韩继成（1999）. 组培快繁香瓜梨技术. 《北方园艺》.