刘文军｜复旦大学｜学者主页

2026

GaN RF HEMT on bulk single crystal AlN substrate with no buffer layer

Yinghao Chen, Genhao Liang, Wenjun Liu, Zhengguang Fang, Yachao Zhang, Jun Zhang, Kai Wang, Lishan Zhao

Journal of Semiconductors

2026

1.92 kV/5 A β -Ga 2 O 3 Schottky Barrier Diodes With Room-Temperature Sputtered Al 2 O 3 Field Plate

Yeye Guo, Hao Zhang, Jining Yang, Yongjie He, Yiwen Yu, Senchong Zhao, Haichuan Yu, Yangxue Ou, Hao Zhu, Chenjie Gu, Wen-Jun Liu

IEEE Transactions on Electron Devices

DOI

2026

β-Ga 2 O 3 Vertical Schottky Barrier Diode with Thermally Cured Beveled Photoresist Field Plate

Yongjie He, Wenzheng Cheng, Jining Yang, Jingxuan Wei, Wen-Jun Liu, Hao Zhu

IEEE Electron Device Letters

DOI

2025

Enhanced memory window and reliability of α-IGZO FeFET enabled by atomic-layer-deposited HfO2 interfacial layer

Yinchi Liu, Xun Lu, Shiyu Li, Hao Zhang, Jining Yang, Yeye Guo, Dmitriy Anatolyevich Golosov, Chenjie Gu, Hong-Liang Lü, Zhigang Ji, Shijin Ding, Wen-Jun Liu

Science China Information Sciences

DOI

2025

Zirconium‐Rich Strategy in Ultrathin Hf 0.5 Zr 0.5 O 2 toward Back‐End‐of‐Line‐Compatible Ferroelectric Random Access Memory

Yinchi Liu, Jiajia Tao, Xiaoyu Dou, Kangli Xu, Yuchun Li, Handong Zhu, Hong-Liang Lü, Yanxi Li, Chi Liu, Jiezhi Chen, Lin Chen, Shijin Ding, Jixuan Wu, Wen-Jun Liu

Advanced Science

DOI

2025

Enhanced polarization switching and reliability in BEOL-compatible HZO/ZrO2/HZO stack under low-voltage operation

Yinchi Liu, Handong Zhu, Xun Lu, Shiyu Li, Hao Zhang, Jining Yang, Yeye Guo, Yanxi Li, Lin Chen, Shi‐Jin Ding, Hong-Liang Lü, Wen-Jun Liu

Applied Physics Letters

DOI

2025

Over 1.2 GW cm−2 β-Ga2O3 SBD with V br of 1.93 kV realized by O2 plasma and annealing

Xinlong Zhou, Jining Yang, Hao Zhang, Yinchi Liu, Genran Xie, Yeye Guo, Huili Tang, Qinglin Sai, Wen-Jun Liu

Semiconductor Science and Technology

DOI

2025

Improved Breakdown Voltage and Leakage Current in $\beta$Ga2O3 Schottky Barrier Diode Realized by N Ion-Implantation Edge Termination

Hao Zhang, Xinlong Zhou, Yinchi Liu, Jining Yang, Handong Zhu, Xun Lu, Shiyu Li, Yeye Guo, Chunlei Wu, Xuning Zhang, Zhenxin Wang, Yaoyi Wang, Ruli Zeng, Yiwen Yu, Wen-Jun Liu

IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI

2025

Toward Low-Thermal-Budget Processing and Low-Voltage Operating in Ferroelectric Stack Films by Introducing ZrO2 Middle Layer

Yinchi Liu, Hao Zhang, Jining Yang, Xun Lu, Shiyu Li, Yeye Guo, Chunlei Wu, Handong Zhu, Xuning Zhang, Zhenxin Wang, Yaoyi Wang, Ruli Zeng, Yiwen Yu, Wen-Jun Liu

IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI

2024

High Performance FeFET with α-IGZO Channel Enabled by Atomic-Layer-Deposited HfO2 Interfacial Layer

Yinchi Liu, Hao Zhang, Xinlong Zhou, Dmitriy Anatolyevich Golosov, Chenjie Gu, Hong-Liang Lü, Shijin Ding, Wen-Jun Liu

DOI

2024

Back-end-of-line compatible Hf0.5Zr0.5O2 ferroelectric devices enabled by microwave annealing

Yinchi Liu, Hao Zhang, Jining Yang, Dmitriy Anatolyevich Golosov, Xiaohan Wu, Chenjie Gu, Shijin Ding, Wen-Jun Liu

Chip

DOI

2024

Enhanced Ferroelectricity and Reliability in Sub-6 nm Ferroelectric Hf0.5Zr0.5O2/ZrO2/Hf0.5Zr0.5O2 Stack Film Compatible with BEOL Process

Yinchi Liu, Jining Yang, Hao Zhang, Dmitriy Anatolyevich Golosov, Chenjie Gu, Xiaohan Wu, Hong-Liang Lü, Lin Chen, Shi‐Jin Ding, Wen-Jun Liu

ACS Applied Electronic Materials

DOI

2024

High performance and nearly wake-up free Hf0.5Zr0.5O2 ferroelectric capacitor realized by middle layer strategy with BEOL compatibility

Yin-Chi Liu, Genran Xie, Ji-Ning Yang, Hao Zhang, Dmitriy Anatolyevich Golosov, Chenjie Gu, Bao Zhu, Xiaohan Wu, Hong-Liang Lü, Shi‐Jin Ding, Wen-Jun Liu

Nanotechnology

DOI

2024

A 1.6 kV Ga2O3 Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10−5 A/cm2 Enabled by Field Plates and N Ion-Implantation Edge Termination

Xinlong Zhou, Jining Yang, Hao Zhang, Yinchi Liu, Genran Xie, Wen-Jun Liu

Nanomaterials

DOI

2024

Graded-Band-Gap Zinc–Tin Oxide Thin-Film Transistors with a Vertically Stacked Structure for Wavelength-Selective Photodetection

Jiahui Teng, Yantao Chen, Chun-Ming Huang, Ming Yang, Bao Zhu, Wen-Jun Liu, Shi‐Jin Ding, Xiaohan Wu

ACS Applied Materials & Interfaces

DOI

2023

Surface plasmon assisted high-performance photodetectors based on hybrid TiO2@GaOxNy-Ag heterostructure

Jiajia Tao, Guang Zeng, Xiaoxi Li, Yang Gu, Wenjun Liu, David Wei Zhang, Hongliang Lu

Journal of Semiconductors

2023

Back-End of Line Compatible Hf0.5Zr0.5O2/ZrO2/Hf0.5Zr0.5O2 Stack Achieving 2Pr of 39.6 μC/cm2 and Endurance Exceeding 1010 Cycles Under Low-Voltage Operation

Yin-Chi Liu, Ji-Ning Yang, Yuchun Li, Xinlong Zhou, Kangli Xu, Yu‐Chang Chen, Genran Xie, Hao Zhang, Lin Chen, Shi‐Jin Ding, Hong-Liang Lü, Wen-Jun Liu

IEEE Electron Device Letters

DOI

2023

Back-End of Line Compatible Hf0.5Zr0.5O2 With ZrO2 Seed Layer for Enhanced Ferroelectricity

Yin-Chi Liu, Yuchun Li, Hong-Liang Lü, Xinlong Zhou, Teng Huang, Ze-Hui Li, Tiantian Pi, Yanfei Li, Shi‐Jin Ding, Lin Chen, Hong-Liang Lü, Wen-Jun Liu

IEEE Electron Device Letters

DOI

2023

A Fast Weight Control Strategy for Programmable Linear RAM Based on the Self-Calibrating Erase Operation

Yanfei Li, Yinchi Liu, Xinlong Zhou, Jining Yang, Zehui Li, Yihang Mei, Wenjie Yu, Bao Hu Zhu, Xiaohan Wu, Shijin Ding, Wen-Jun Liu

Electronics

DOI

2023

High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf0.5Zr0.5O2/Al-Doped Hf0.25Zr0.75O2 Nanofilms as Dielectrics

Yu-Li He, Guang Zheng, Bao Hu Zhu, Xiaohan Wu, Wen-Jun Liu, David Wei Zhang, Shi‐Jin Ding

Nanomaterials

DOI

2023

Performance improvement of Hf0.45Zr0.55O x ferroelectric field effect transistor memory with ultrathin Al–O bonds-modified InO x channels

Wei Meng, Dongqi Xiao, Bin-Bin Luo, Xiaohan Wu, Bao Hu Zhu, Wen-Jun Liu, Shi‐Jin Ding

Nanotechnology

DOI

2022

High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO2 heterojunction charge trapping stack

Wen Xiong, Jingyong Huo, Xiaohan Wu, Wen-Jun Liu, David Wei Zhang, Shi‐Jin Ding

Chinese Physics B

DOI

2022

Depolarization Field in FeFET Considering Minor Loop Operation and Charge Trapping

Xinpei Jia, Jinjuan Xiang, Hao Xu, Wen-Jun Liu, Xiaolei Wang, Wenwu Wang

IEEE Transactions on Electron Devices

DOI

2022

Influence of Substrate and Gate Insulator on the Thermal Characteristics of β-Ga2O3 Field-Effect Transistors: A Simulation Study

Chaochao Liu, Hao He, Xinlong Zhou, Wen-Jun Liu

Electronics

DOI

2022

Highly sensitive and stable β-Ga2O3 DUV phototransistor with local back-gate structure and its neuromorphic application

Xiaoxi Li, Guang Zeng, Yuchun Li, Qiu-Jun Yu, Meng-Yang Liu, Li‐Yuan Zhu, Wen-Jun Liu, Yingguo Yang, David Wei Zhang, Hong-Liang Lü

Nano Research

DOI

2022

Ultraviolet-Assisted Low-Thermal-Budget-Driven α-InGaZnO Thin Films for High-Performance Transistors and Logic Circuits

Yongchun Zhang, Gang He, Leini Wang, Wenhao Wang, Xiaofen Xu, Wen-Jun Liu

ACS Nano

DOI

2022

Ferroelectric artificial synapse for neuromorphic computing and flexible applications

Qingxuan Li, Yilun Liu, Yuanyuan Cao, Tian-Yu Wang, Hao Zhu, Ji Li, Wen-Jun Liu, Qingqing Sun, David Wei Zhang, Lin Chen

Fundamental Research

DOI

2022

Superhigh energy storage density on-chip capacitors with ferroelectric Hf 0.5 Zr 0.5 O 2 /antiferroelectric Hf 0.25 Zr 0.75 O 2 bilayer nanofilms fabricated by plasma-enhanced atomic layer deposition

Yu-Li He, Guang Zheng, Xiaohan Wu, Wen-Jun Liu, David Wei Zhang, Shi‐Jin Ding

Nanoscale Advances

DOI

2021

Interface Chemistry Evolution and Leakage Current Conduction Mechanism Determination in Rare-Earth-Doped Hf-Based Gate Dielectrics

Wenjun Liu, Gang He, Die Wang, Hai Yang Yu, Qian Gao, Yanmei Liu, Zebo Fang

IEEE Transactions on Electron Devices

DOI

2021

High-Performance a-IGZO TFT Fabricated With Ultralow Thermal Budget via Microwave Annealing

Tiantian Pi, Dongqi Xiao, Hui Ying Yang, Gang He, Xiaohan Wu, Wen-Jun Liu, David Wei Zhang, Shi‐Jin Ding

IEEE Transactions on Electron Devices

DOI

2021

Fabrication of high-performance a-IGZO thin-film transistor with post-annealing treatment

Tiantian Pi, Dongqi Xiao, Hui Ying Yang, Xiaohan Wu, Wen-Jun Liu, Shijin Ding, David Wei Zhang

IEEE International Conference on ASIC (ASICON)

DOI

2021

Demonstration of Ni/NiOx/β-Ga2O3 heterojunction diode with F plasma pre-treatment for reducing on-resistance and reverse leakage current

Yifan Xiao, Xiaoxi Li, Hehe Gong, Wen-Jun Liu, Xiaohan Wu, Shijin Ding, Hong-Liang Lü, Jiandong Ye

Applied Surface Science

DOI

2021

Band alignment modulation of atomic layer deposition-prepared Al2O3/β-Ga2O3 heterojunction interface by deposition temperature

Shun Zhou, Hao Liu, Linpeng Dong, Weiguo Liu, Shigeng Song, Wen-Jun Liu

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

DOI

2020

Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels*

Meina Zhang, Yan Shao, Xiaolin Wang, Xiaohan Wu, Wen-Jun Liu, Shi‐Jin Ding

Chinese Physics B

DOI

2020

Floating-gate photosensitive synaptic transistors with tunable functions for neuromorphic computing

Lingkai Li, Xiaolin L. Wang, Junxiang Pei, Wen-Jun Liu, Xiaohan Wu, David Wei Zhang, Shi‐Jin Ding

Science China Materials

DOI

2020

Balanced Performance Improvement of a-InGaZnO Thin-Film Transistors Using ALD-Derived Al2O3-Passivated High-k HfGdOx Dielectrics

Yongchun Zhang, Yangjian Lin, Gang He, Binghui Ge, Wen-Jun Liu

ACS Applied Electronic Materials

DOI

2020

Preparation and characterization of SnO films via reactive sputtering for ambipolar thin-film transistor applications

Jingyong Huo, Xiaolin L. Wang, Xiaohan Wu, Wen-Jun Liu, Shi‐Jin Ding

Semiconductor Science and Technology

DOI

2020

Large-area vertically stacked MoTe2/β-Ga2O3 p-n heterojunction realized by PVP/PVA assisted transfer

Yifan Xiao, Wen-Jun Liu, Wen-Jun Liu, Chaochao Liu, Hongyu Yu, Huan Liu, Jun Han, Weiguo Liu, Weiguo Liu, Wenfeng Zhang, Xiaohan Wu, Shijin Ding, Zheng Liu, David Wei Zhang

Applied Surface Science

DOI

2020

Band Alignment at the Al2O3/β-Ga2O3 Interface with CHF3 Treatment*

Hao Liu, Wen-Jun Liu, Yifan Xiao, Chao-Chao Liu, Xiaohan Wu, Shi‐Jin Ding

Chinese Physics Letters

DOI

2020

Plasma-Enhanced Atomic Layer Deposition of Low Resistivity and Ultrathin Manganese Oxynitride Films with Excellent Resistance to Copper Diffusion

Yongping Wang, Xiaohan Wu, Wen-Jun Liu, David Wei Zhang, Shi‐Jin Ding

ACS Applied Electronic Materials

DOI

2020

Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors

Linyan Xie, Dongqi Xiao, Junxiang Pei, Jingyong Huo, Xiaohan Wu, Wen-Jun Liu, Shi‐Jin Ding

Materials Research Express

DOI

2020

Light response behaviors of amorphous In–Ga–Zn–O thin-film transistors via in situ interfacial hydrogen doping modulation

Xiaolin Wang, Yan Shao, Xiaohan Wu, Meina Zhang, Lingkai Li, Wen-Jun Liu, David Wei Zhang, Shi‐Jin Ding

RSC Advances

DOI

2019

Flexible Femtojoule Energy-Consumption In-Ga-Zn-O Synaptic Transistors With Extensively Tunable Memory Time

Lingkai Li, Yan Shao, Xiaolin L. Wang, Xiaohan Wu, Wen-Jun Liu, David Wei Zhang, Shi‐Jin Ding

IEEE Transactions on Electron Devices

DOI

2019

Multilevel memory and synaptic characteristics of a-IGZO thin-film transistor with atomic layer–deposited Al 2 O 3 /ZnO/Al 2 O 3 stack layers

Dandan Liu, Junxiang Pei, Lingkai Li, Jingyong Huo, Xiaohan Wu, Wen-Jun Liu, Shi‐Jin Ding

Journal of materials research/Pratt's guide to venture capital sources

DOI

2019

The effect of NH 3 plasma pulse time on atomic layer-deposited TiN films using tetrakis-(dimethylamino) titanium as a metal precursor

Zijun Ding, Bao Hu Zhu, Wenjun Liu, Xiaohan Wu, Shi‐Jin Ding

Japanese Journal of Applied Physics

DOI

2019

Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation

Ya-Wei Huan, Ke Xu, Wen-Jun Liu, Hao Zhang, Dmitriy Anatolyevich Golosov, Changtai Xia, Hongyu Yu, Xiaohan Wu, Qingqing Sun, Shi‐Jin Ding

Nanoscale Research Letters

DOI

2019

Voltage-Polarity Dependent Programming Behaviors of Amorphous In–Ga–Zn–O Thin-Film Transistor Memory with an Atomic-Layer-Deposited ZnO Charge Trapping Layer

Dandan Liu, Wen-Jun Liu, Junxiang Pei, Lin-Yan Xie, Jingyong Huo, Xiaohan Wu, Shi‐Jin Ding

Nanoscale Research Letters

DOI

2019

Investigation of energy band at atomic layer deposited AZO/β-Ga2O3 ($$ \overline{2}01 $$) heterojunctions

Shunming Sun, Wen-Jun Liu, Dmitriy Anatolyevich Golosov, Chenjie Gu, Shi‐Jin Ding

Nanoscale Research Letters

DOI

2019

Investigation of Nitridation on the Band Alignment at MoS2/HfO2 Interfaces

Ya-Wei Huan, Wen-Jun Liu, Xiao-Bing Tang, Xiaoyong Xue, Xiaolei Wang, Qingqing Sun, Shi‐Jin Ding

Nanoscale Research Letters

DOI

2019

High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric

Yan Shao, Xiaohan Wu, Meina Zhang, Wen-Jun Liu, Shi‐Jin Ding

Nanoscale Research Letters

DOI

2019

Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor

Bao Hu Zhu, Zijun Ding, Xiaohan Wu, Wen-Jun Liu, David Wei Zhang, Shi‐Jin Ding

Nanoscale Research Letters

DOI

2019

Dielectric Enhancement of Atomic Layer-Deposited Al2O3/ZrO2/Al2O3 MIM Capacitors by Microwave Annealing

Bao Hu Zhu, Xiaohan Wu, Wen-Jun Liu, Shi‐Jin Ding, David Wei Zhang, Zhongyong Fan

Nanoscale Research Letters

DOI

2019

Investigation of growth characteristics, compositions, and properties of atomic layer deposited amorphous Zn-doped Ga2O3 films

Jiajia Tao, Hong-Liang Lü, Yang Gu, Hong-Ping Ma, Xing Li, Jinxin Chen, Wen-Jun Liu, Hao Zhang, Jijun Feng

Applied Surface Science

DOI

2018

Rapid Improvement in Thin Film Transistors With Atomic-Layer-Deposited InOxChannels via O2Plasma Treatment

Qian Ma, Yan Shao, Y.-P. Wang, Hongbao Zheng, Bao Hu Zhu, Wen-Jun Liu, Shi‐Jin Ding, D. W. Zhang

IEEE Electron Device Letters

DOI

2018

Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier

Yongping Wang, Zijun Ding, Bao Zhu, Wenjun Liu, David Wei Zhang, Shi‐Jin Ding

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

DOI

2018

High-Performance On-Chip Supercapacitors Based on Mesoporous Silicon Coated with Ultrathin Atomic Layer-Deposited In 2 O 3 Films

Bao Hu Zhu, Xiaohan Wu, Wen-Jun Liu, Hong-Liang Lü, David Wei Zhang, Zhongyong Fan, Shi‐Jin Ding

ACS Applied Materials & Interfaces

DOI

2018

Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga2O3 ( 2 ¯ 01 $$ \overline{2}01 $$ ) Heterojunctions

Shunming Sun, Wen-Jun Liu, Yifan Xiao, Ya-Wei Huan, Hao Liu, Shi‐Jin Ding, David Wei Zhang

Nanoscale Research Letters

DOI

2018

Band alignment of indium–gallium–zinc oxide/β-Ga 2 O 3 heterojunction determined by angle-resolved X-ray photoelectron spectroscopy

Ya-Wei Huan, Xinglu Wang, Wen-Jun Liu, Hong Dong, Shibing Long, Shun-Ming Sun, Jian-Guo Yang, Sudong Wu, Wen-Jie Yu, Ray‐Hua Horng, Changtai Xia, Hong-Yu Yu, Hong-Liang Lü, Qing-Qing Sun, Shijin Ding, David Wei Zhang

Japanese Journal of Applied Physics

DOI

2018

Formation Mechanism of Heavily Doped Silicon Mesopores Induced by Pt Nanoparticle-Assisted Chemical Etching

Bao Hu Zhu, Wen-Jun Liu, Shi‐Jin Ding, David Wei Zhang, Zhongyong Fan

The Journal of Physical Chemistry C

DOI

2018

Recent Advances in β-Ga2O3–Metal Contacts

Ya-Wei Huan, Shunming Sun, Chenjie Gu, Wen-Jun Liu, Shi‐Jin Ding, Hongyu Yu, Changtai Xia, David Wei Zhang

Nanoscale Research Letters

DOI

2018

Band alignment of In2O3/β-Ga2O3 interface determined by X-ray photoelectron spectroscopy

Shun-Ming Sun, Wen-Jun Liu, Yong-Ping Wang, Ya-Wei Huan, Qian Ma, Bao Hu Zhu, Sudong Wu, Wen-Jie Yu, Ray‐Hua Horng, Changtai Xia, Qing-Qing Sun, Shijin Ding, David Wei Zhang

Applied Physics Letters

DOI

2018

Band alignment of AlN/β-Ga2O3 heterojunction interface measured by x-ray photoelectron spectroscopy

Jinxin Chen, Jiajia Tao, Hong-Ping Ma, Hao Zhang, Jijun Feng, Wen-Jun Liu, Changtai Xia, Hong-Liang Lü, David Wei Zhang

Applied Physics Letters

DOI

2018

Characterization of PECVD ultralow dielectric constant porous SiOCH films using triethoxymethylsilane precursor and cinene porogen

Zijun Ding, Yong-Ping Wang, Wen-Jun Liu, Shi‐Jin Ding, Mikhaı̈l R. Baklanov, David Wei Zhang

Journal of Physics D Applied Physics

DOI

2018

Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors

Qian Ma, He-Mei Zheng, Yan Shao, Bao Hu Zhu, Wen-Jun Liu, Shi‐Jin Ding, David Wei Zhang

Nanoscale Research Letters

DOI

2018

High performance ultraviolet photodetectors with atomic-layer-deposited ZnO films via low-temperature post-annealing in air

Jian Gao, Wen-Jun Liu, Shi‐Jin Ding, Hong-Liang Lü, David Wei Zhang

AIP Advances

DOI

2017

Erasing-Modes Dependent Performance of a-IGZO TFT Memory With Atomic-Layer-Deposited Ni Nanocrystal Charge Storage Layer

Shi-Bing Qian, Yan Shao, Wen-Jun Liu, David Wei Zhang, Shi‐Jin Ding

IEEE Transactions on Electron Devices

DOI

2017

Effects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer Deposition

Long Sun, Hong-Liang Lü, Hongyan Chen, Tao Wang, Xinming Ji, Wenjun Liu, Dongxu Zhao, Anjana Devi, Shi‐Jin Ding, David Wei Zhang

Nanoscale Research Letters

DOI

2017

Investigating the impact of the defect dynamic characteristics on the PBTI in the high-κ gate device

Xianqiang Liu, Xiaodi Xu, Chenjie Gu, Renyuan Gu, Weiwei Wang, Wen-Jun Liu, Tianli Duan

Microelectronics Reliability

DOI

2017

Low-Temperature One-Step Growth of AlON Thin Films with Homogenous Nitrogen-Doping Profile by Plasma-Enhanced Atomic Layer Deposition

Hongyan Chen, Hong-Liang Lü, Jinxin Chen, Feng Zhang, Xinming Ji, Wen-Jun Liu, Xiaofeng Yang, David Wei Zhang

ACS Applied Materials & Interfaces

DOI

2017

Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory

Shi-Bing Qian, Yongping Wang, Yan Shao, Wen-Jun Liu, Shi‐Jin Ding

Nanoscale Research Letters

DOI

2016

Performance Improvement of Atomic Layer-Deposited ZnO/Al2O3Thin-Film Transistors by Low-Temperature Annealing in Air

You-Hang Wang, Qian Ma, Lili Zheng, Wen-Jun Liu, Shi‐Jin Ding, Hong-Liang Lü, David Wei Zhang

IEEE Transactions on Electron Devices

DOI

2016

High Performance Unannealed a-InGaZnO TFT with an Atomic-Layer-Deposited SiO2 Insulator

Lili Zheng, Qian Ma, You-Hang Wang, Wen-Jun Liu, Shi‐Jin Ding, Daivd Wei Zhang

IEEE Electron Device Letters

DOI

2016

Voltage-dependent capacitance behavior and underlying mechanisms in metal–insulator–metal capacitors with Al 2 O 3 –ZrO 2 –SiO 2 nano-laminates

Bao Hu Zhu, Wenjun Liu, Lei Wei, Shi‐Jin Ding

Journal of Physics D Applied Physics

DOI

2016

Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors

Yongping Wang, Zijun Ding, Qi-Xuan Liu, Wenjun Liu, Shi‐Jin Ding, David Wei Zhang

Journal of Materials Chemistry C

DOI

2016

Stability enhancement of low temperature thin-film transistors with atomic-layer-deposited ZnO:Al channels

Wen-Jun Liu, You-Hang Wang, Lili Zheng, Hong-Liang Lü, Shi‐Jin Ding

Microelectronic Engineering

DOI

2016

Mobility and Stability Enhancement of Amorphous In-Ga-Zn-O TFTs With Atomic Layer Deposited Al2O3/SiO2Stacked Insulators

Lili Zheng, Shi-Bing Qian, You-Hang Wang, Wen-Jun Liu, Shi‐Jin Ding

IEEE Journal of the Electron Devices Society

DOI

2016

Influence of Post-Annealing on Electrical Characteristics of Thin-Film Transistors with Atomic-Layer-Deposited ZnO-Channel/Al 2 O 3 -Dielectric

You-Hang Wang, Qian Ma, Lili Zheng, Wen-Jun Liu, Shi‐Jin Ding, Hong-Liang Lü, Wei Zhang

Chinese Physics Letters

DOI

2016

Low-Cost and High-Productivity Three-Dimensional Nanocapacitors Based on Stand-Up ZnO Nanowires for Energy Storage

Lei Wei, Qi-Xuan Liu, Bao Hu Zhu, Wen-Jun Liu, Shi‐Jin Ding, Hong-Liang Lü, Anquan Jiang, David Wei Zhang

Nanoscale Research Letters

DOI

2016

Surface-plasmon mediated photoluminescence enhancement of Pt-coated ZnO nanowires by inserting an atomic-layer-deposited Al 2 O 3 spacer layer

Qing-Hua Ren, Yan Zhang, Hong-Liang Lü, Hong‐Yan Chen, Yuan Zhang, Dehui Li, Wen-Jun Liu, Shi‐Jin Ding, An-Quan Jiang, David Wei Zhang

Nanotechnology

DOI

2016

Photoluminescence enhancement of ZnO nanowire arrays by atomic layer deposition of ZrO 2 layers and thermal annealing

Yuan Zhang, Hong-Liang Lü, Tao Wang, Qing-Hua Ren, Hong‐Yan Chen, Hao Zhang, Xinming Ji, Wen-Jun Liu, Shi‐Jin Ding, David Wei Zhang

Physical Chemistry Chemical Physics

DOI

2015

Novel Multi-Level Cell TFT Memory With an In–Ga–Zn-O Charge Storage Layer and Channel

Wen-Peng Zhang, Shi-Bing Qian, Wen-Jun Liu, Shi‐Jin Ding, David Wei Zhang

IEEE Electron Device Letters

DOI

2015

Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack

Shi-Bing Qian, Wen-Peng Zhang, Wenjun Liu, Shi‐Jin Ding

AIP Advances

DOI

2015

Voltage linearity modulation and polarity dependent conduction in metal-insulator-metal capacitors with atomic-layer-deposited Al2O3/ZrO2/SiO2 nano-stacks

Bao Hu Zhu, Wenjun Liu, Lei Wei, David Wei Zhang, Anquan Jiang, Shi‐Jin Ding

Journal of Applied Physics

DOI

2010

Mn掺杂GaN纳米条的制备和性质的研究

刘文军，薛成山，石锋，庄惠照，郭永福

《山东科学》

2010

氨化Ga2O3/Pd/Sapphire薄膜制备GaN纳米线

薛成山，郭永福，石锋，庄惠照，刘文军，曹玉萍，孙海波

《功能材料》

2010

利用Pd催化合成单晶GaN纳米线的光学特性(英文)

郭永福，薛成山，石锋，庄惠照，刘文军，孙海波，曹玉萍

《物理化学学报》

2010

氨气流量对GaN纳米线生长及性能的影响

曹玉萍，薛成山，石锋，孙海波，刘文军，郭永福

《功能材料》

2009

Boundary condition and initial value effects in the reaction-diffusion model of interface trap generation/recovery

罗勇，黄大鸣，刘文军，李名复

Journal of Semiconductors

2009

Si基Au催化合成镁掺杂GaN纳米线

黄英龙，薛成山，庄惠照，张冬冬，王英，王邹平，郭永福，刘文军

《功能材料》

2009

不同衬底上氧化锌纳米结构的水热法制备研究

郑毅，孟宪权，刘文军，胡明

《功能材料》

2007

Multistacked Al2O3∕HfO2∕SiO2 tunnel layer for high-density nonvolatile memory application

Wei Chen, Wenjun Liu, Min Zhang, Shi‐Jin Ding, David Wei Zhang, Mingfu Li

Applied Physics Letters

DOI

精选作品

期刊论文

GaN RF HEMT on bulk single crystal AlN substrate with no buffer layer

1.92 kV/5 A β -Ga 2 O 3 Schottky Barrier Diodes With Room-Temperature Sputtered Al 2 O 3 Field Plate

β-Ga 2 O 3 Vertical Schottky Barrier Diode with Thermally Cured Beveled Photoresist Field Plate

Enhanced memory window and reliability of α-IGZO FeFET enabled by atomic-layer-deposited HfO2 interfacial layer

Zirconium‐Rich Strategy in Ultrathin Hf 0.5 Zr 0.5 O 2 toward Back‐End‐of‐Line‐Compatible Ferroelectric Random Access Memory

Enhanced polarization switching and reliability in BEOL-compatible HZO/ZrO2/HZO stack under low-voltage operation

Over 1.2 GW cm−2 β-Ga2O3 SBD with V br of 1.93 kV realized by O2 plasma and annealing

Improved Breakdown Voltage and Leakage Current in $\beta$Ga2O3 Schottky Barrier Diode Realized by N Ion-Implantation Edge Termination

Toward Low-Thermal-Budget Processing and Low-Voltage Operating in Ferroelectric Stack Films by Introducing ZrO2 Middle Layer

High Performance FeFET with α-IGZO Channel Enabled by Atomic-Layer-Deposited HfO2 Interfacial Layer

Back-end-of-line compatible Hf0.5Zr0.5O2 ferroelectric devices enabled by microwave annealing

Enhanced Ferroelectricity and Reliability in Sub-6 nm Ferroelectric Hf0.5Zr0.5O2/ZrO2/Hf0.5Zr0.5O2 Stack Film Compatible with BEOL Process

High performance and nearly wake-up free Hf0.5Zr0.5O2 ferroelectric capacitor realized by middle layer strategy with BEOL compatibility

A 1.6 kV Ga2O3 Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10−5 A/cm2 Enabled by Field Plates and N Ion-Implantation Edge Termination

Graded-Band-Gap Zinc–Tin Oxide Thin-Film Transistors with a Vertically Stacked Structure for Wavelength-Selective Photodetection

Surface plasmon assisted high-performance photodetectors based on hybrid TiO2@GaOxNy-Ag heterostructure

Back-End of Line Compatible Hf0.5Zr0.5O2/ZrO2/Hf0.5Zr0.5O2 Stack Achieving 2Pr of 39.6 μC/cm2 and Endurance Exceeding 1010 Cycles Under Low-Voltage Operation

Back-End of Line Compatible Hf0.5Zr0.5O2 With ZrO2 Seed Layer for Enhanced Ferroelectricity

A Fast Weight Control Strategy for Programmable Linear RAM Based on the Self-Calibrating Erase Operation

High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf0.5Zr0.5O2/Al-Doped Hf0.25Zr0.75O2 Nanofilms as Dielectrics

Performance improvement of Hf0.45Zr0.55O x ferroelectric field effect transistor memory with ultrathin Al–O bonds-modified InO x channels

High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO2 heterojunction charge trapping stack

Depolarization Field in FeFET Considering Minor Loop Operation and Charge Trapping

Influence of Substrate and Gate Insulator on the Thermal Characteristics of β-Ga2O3 Field-Effect Transistors: A Simulation Study

Highly sensitive and stable β-Ga2O3 DUV phototransistor with local back-gate structure and its neuromorphic application

Ultraviolet-Assisted Low-Thermal-Budget-Driven α-InGaZnO Thin Films for High-Performance Transistors and Logic Circuits

Ferroelectric artificial synapse for neuromorphic computing and flexible applications

Superhigh energy storage density on-chip capacitors with ferroelectric Hf 0.5 Zr 0.5 O 2 /antiferroelectric Hf 0.25 Zr 0.75 O 2 bilayer nanofilms fabricated by plasma-enhanced atomic layer deposition

Interface Chemistry Evolution and Leakage Current Conduction Mechanism Determination in Rare-Earth-Doped Hf-Based Gate Dielectrics

High-Performance a-IGZO TFT Fabricated With Ultralow Thermal Budget via Microwave Annealing

Fabrication of high-performance a-IGZO thin-film transistor with post-annealing treatment

Demonstration of Ni/NiOx/β-Ga2O3 heterojunction diode with F plasma pre-treatment for reducing on-resistance and reverse leakage current

Band alignment modulation of atomic layer deposition-prepared Al2O3/β-Ga2O3 heterojunction interface by deposition temperature

Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels*

Floating-gate photosensitive synaptic transistors with tunable functions for neuromorphic computing

Balanced Performance Improvement of a-InGaZnO Thin-Film Transistors Using ALD-Derived Al2O3-Passivated High-k HfGdOx Dielectrics

Preparation and characterization of SnO films via reactive sputtering for ambipolar thin-film transistor applications

Large-area vertically stacked MoTe2/β-Ga2O3 p-n heterojunction realized by PVP/PVA assisted transfer

Band Alignment at the Al2O3/β-Ga2O3 Interface with CHF3 Treatment*

Plasma-Enhanced Atomic Layer Deposition of Low Resistivity and Ultrathin Manganese Oxynitride Films with Excellent Resistance to Copper Diffusion

Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors

Light response behaviors of amorphous In–Ga–Zn–O thin-film transistors via in situ interfacial hydrogen doping modulation

Flexible Femtojoule Energy-Consumption In-Ga-Zn-O Synaptic Transistors With Extensively Tunable Memory Time

Multilevel memory and synaptic characteristics of a-IGZO thin-film transistor with atomic layer–deposited Al 2 O 3 /ZnO/Al 2 O 3 stack layers

The effect of NH 3 plasma pulse time on atomic layer-deposited TiN films using tetrakis-(dimethylamino) titanium as a metal precursor

Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation

Voltage-Polarity Dependent Programming Behaviors of Amorphous In–Ga–Zn–O Thin-Film Transistor Memory with an Atomic-Layer-Deposited ZnO Charge Trapping Layer

Investigation of energy band at atomic layer deposited AZO/β-Ga2O3 ($$ \overline{2}01 $$) heterojunctions

Investigation of Nitridation on the Band Alignment at MoS2/HfO2 Interfaces

High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric

Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor

Dielectric Enhancement of Atomic Layer-Deposited Al2O3/ZrO2/Al2O3 MIM Capacitors by Microwave Annealing

Investigation of growth characteristics, compositions, and properties of atomic layer deposited amorphous Zn-doped Ga2O3 films

Rapid Improvement in Thin Film Transistors With Atomic-Layer-Deposited InOxChannels via O2Plasma Treatment

Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier

High-Performance On-Chip Supercapacitors Based on Mesoporous Silicon Coated with Ultrathin Atomic Layer-Deposited In 2 O 3 Films

Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga2O3 ( 2 ¯ 01 $$ \overline{2}01 $$ ) Heterojunctions

Band alignment of indium–gallium–zinc oxide/β-Ga 2 O 3 heterojunction determined by angle-resolved X-ray photoelectron spectroscopy

Formation Mechanism of Heavily Doped Silicon Mesopores Induced by Pt Nanoparticle-Assisted Chemical Etching

Recent Advances in β-Ga2O3–Metal Contacts

Band alignment of In2O3/β-Ga2O3 interface determined by X-ray photoelectron spectroscopy

Band alignment of AlN/β-Ga2O3 heterojunction interface measured by x-ray photoelectron spectroscopy

Characterization of PECVD ultralow dielectric constant porous SiOCH films using triethoxymethylsilane precursor and cinene porogen

Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors

High performance ultraviolet photodetectors with atomic-layer-deposited ZnO films via low-temperature post-annealing in air

Erasing-Modes Dependent Performance of a-IGZO TFT Memory With Atomic-Layer-Deposited Ni Nanocrystal Charge Storage Layer

Effects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer Deposition

Investigating the impact of the defect dynamic characteristics on the PBTI in the high-κ gate device

Low-Temperature One-Step Growth of AlON Thin Films with Homogenous Nitrogen-Doping Profile by Plasma-Enhanced Atomic Layer Deposition

Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory

Performance Improvement of Atomic Layer-Deposited ZnO/Al2O3Thin-Film Transistors by Low-Temperature Annealing in Air

High Performance Unannealed a-InGaZnO TFT with an Atomic-Layer-Deposited SiO2 Insulator

Voltage-dependent capacitance behavior and underlying mechanisms in metal–insulator–metal capacitors with Al 2 O 3 –ZrO 2 –SiO 2 nano-laminates

Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors

Stability enhancement of low temperature thin-film transistors with atomic-layer-deposited ZnO:Al channels

Mobility and Stability Enhancement of Amorphous In-Ga-Zn-O TFTs With Atomic Layer Deposited Al2O3/SiO2Stacked Insulators

Influence of Post-Annealing on Electrical Characteristics of Thin-Film Transistors with Atomic-Layer-Deposited ZnO-Channel/Al 2 O 3 -Dielectric

Low-Cost and High-Productivity Three-Dimensional Nanocapacitors Based on Stand-Up ZnO Nanowires for Energy Storage