吕杭炳｜厦门大学｜学者主页

期刊论文

2026

Comprehensive Variation Model of Hafnium-Based Ferroelectric Capacitors for High-Sigma Memory Window Simulation

Diqing Su, Yannan Xu, Qingting Ding, Dongsen Chen, Shiqi Yue, Jianrui Cheng, Zhi-Wei Zheng, Hangbing Lv

IEEE Electron Device Letters

DOI

2025

Root cause of read after delay in ferroelectric memories

Diqing Su, Shaorui Li, Xiao Wang, Yannan Xu, Qingting Ding, Heng Zhang, Hangbing Lv

Chip

DOI

2021

Resistive switching memory for high density storage and computing

许晓欣，罗庆，龚天成，吕杭炳，刘琦，刘明

Chinese Physics B

2021

Low-cost dual-stage offset-cancelled sense amplifier with hybrid read reference generator for improved read performance of RRAM at advanced technology nodes

Qiao Wang, Donglin Zhang, Yulin Zhao, Chao Liu, Xiaoxin Xu, Jianguo Yang, Hangbing Lv

Journal of Semiconductors

2021

一种忆阻器阵列的阻值调制测试系统

余兆安，董大年，姚志宏，许晓欣，吕杭炳

《微纳电子与智能制造》

DOI

2021

氧化钽阻变存储器的初始化电压调制

官郭沁，邹荣，左青云，田盼，吕杭炳，田志，王奇伟，曾敏，杨志

《现代电子技术》

DOI

2020

退火参数对铁电TiN/HfxZr1-xO2/TiN薄膜器件的电学性能影响

朱曦，马海力，高天，冯洁，吕杭炳

《微电子学》

DOI

2018

Analysis of tail bits generation of multilevel storage in resistive switching memory

刘璟，许晓欣，陈传兵，龚天成，余兆安，罗庆，袁鹏，董大年，刘琦，龙世兵，吕杭炳，刘明

Chinese Physics B

2017

阻变存储阵列的自动化测试系统

董大年，汪毓铎，吕杭炳，姚志宏，冯雪，余兆安

《半导体技术》

2017

阳离子基阻变存储器的研究进展

刘琦，刘森，龙世兵，吕杭炳，刘明

《中国材料进展》

2016

Thermal effect on endurance performance of 3-dimensional RRAM crossbar array

卢年端，孙鹏霄，李泠，刘琦，龙世兵，吕杭炳，刘明

Chinese Physics B

2016

阻变存储器研究进展

龙世兵，刘琦，吕杭炳，刘明

《中国科学:物理学力学天文学》

2015

Effect of Pulse and dc Formation on the Performance of One-Transistor and One-Resistor Resistance Random Access Memory Devices

刘红涛，杨保和，吕杭炳，许晓欣，罗庆，王国明，张美芸，龙世兵，刘琦，刘明

Chinese Physics Letters

2011

Investigation of resistive switching behaviours in WO3-based RRAM devices

李颖弢，龙世兵，吕杭炳，刘琦，王琴，王艳，张森，连文泰，刘肃，刘明

Chinese Physics B

2011

基于整流特性的RRAM无源交叉阵列研究进展

张康玮，龙世兵，刘琦，吕杭炳，李颖弢，王艳，连文泰，王明，张森，刘明

《中国科学:技术科学》

2008

电阻型存储器器件与工艺研究

吕杭炳

《复旦大学》

会议论文

2015

Characteristics and Mechanism of Multimode Resistive Switching Behaviors in the Oxide-electrolyte-based RRAM

Ming Liu, Qi Liu, Haitao Sun, Shibing Long, Hangbing Lv

Abstract Book of the 6th International Conference on Nanoscience & Technology, China 2015

2014

Coexistence of Memory and Threshold Resistive Switching in Ag/SiO 2 /Pt Device

Qi Liu, Haitao Sun, Congfei Li, Shibing Long, Hangbing Lv, Ming Liu

《2014第四届国际纳米科技大会——主题：引领工业革命新浪潮会刊》

2014

Gate Induced Resistive Switching in 1T1R Structure with Improved Uniformity and Better Data Retention

Hangbing Lv, Hongtao Liu, Xiaoxin Xu, Qi Liu, Shibing Long, Ming Liu

《2014第四届国际纳米科技大会——主题：引领工业革命新浪潮会刊》

2013

The Switch Mechanism of Solid-Electrolyte-Based Resistive Switching Memory

Ming Liu, Qi Liu, Shibing Long, Hangbing Lv

International Conference on Nanoscience & Technology,China 2013(ChinaNANO 2013)

吕杭炳

精选作品

期刊论文

Comprehensive Variation Model of Hafnium-Based Ferroelectric Capacitors for High-Sigma Memory Window Simulation

Root cause of read after delay in ferroelectric memories

Resistive switching memory for high density storage and computing

Low-cost dual-stage offset-cancelled sense amplifier with hybrid read reference generator for improved read performance of RRAM at advanced technology nodes

一种忆阻器阵列的阻值调制测试系统

氧化钽阻变存储器的初始化电压调制

退火参数对铁电TiN/HfxZr1-xO2/TiN薄膜器件的电学性能影响

Analysis of tail bits generation of multilevel storage in resistive switching memory

阻变存储阵列的自动化测试系统

阳离子基阻变存储器的研究进展

Thermal effect on endurance performance of 3-dimensional RRAM crossbar array

阻变存储器研究进展

Effect of Pulse and dc Formation on the Performance of One-Transistor and One-Resistor Resistance Random Access Memory Devices

Investigation of resistive switching behaviours in WO3-based RRAM devices

基于整流特性的RRAM无源交叉阵列研究进展

电阻型存储器器件与工艺研究

会议论文

Characteristics and Mechanism of Multimode Resistive Switching Behaviors in the Oxide-electrolyte-based RRAM

Coexistence of Memory and Threshold Resistive Switching in Ag/SiO 2 /Pt Device

Gate Induced Resistive Switching in 1T1R Structure with Improved Uniformity and Better Data Retention

The Switch Mechanism of Solid-Electrolyte-Based Resistive Switching Memory

研究方向