卞宝安

2026

Quantum Transport Study of 5.1 nm P-Type Field-Effect Transistors Based on WSe2/BoroΔ and WSe2/NbS2 for High-Performance CMOS Logic Applications

ACS Applied Nano Materials

DOI

2026

Interface and defect engineering in field effect transistors based on WSSe/χ3Boro heterojunction from first-principles quantum transport simulation

Surfaces and Interfaces

DOI

2026

BN substrate induced transition from Schottky to ohmic contact in WSeTe/NbSe₂ heterojunction

Chemical Physics

DOI

2026

High-conduction and ultra-steep switching in boron-phosphide cold-source field-effect transistors

Chinese Journal of Physics

DOI

2025

Interfacial properties of monolayer PtSe2 FETs: A comparative study of traditional metal and semimetal electrodes

Applied Physics A

DOI

2025

Interfacial properties of ZrSX/Graphene(X=O,Se) heterostructures with the modulation of electric field and defect engineering

Physica E Low-dimensional Systems and Nanostructures

DOI

2025

First-principles study on photocatalytic performance of direct Z-scheme GaX/SnS2 (X = N, P, As)

Colloids and Surfaces A Physicochemical and Engineering Aspects

DOI

2025

Performance of Sub-5 nm field-effect transistors based on ZrS2/NbTe2 heterojunction from quantum transport simulations

Chinese Journal of Physics

DOI

2025

Interfacial properties in edge-contact Borophene/BAs from first-principle study

The European Physical Journal B

DOI

2025

A first-principles study on photocatalytic water splitting of XP/SnC (X = B, Ga) heterojunctions

Computational Materials Science

DOI

2025

Electrical contact between 2D material NbS2 and WSSe

Physica E Low-dimensional Systems and Nanostructures

DOI

2024

集成式GaN单开关管功率因数校正变换器

《重庆大学学报》

2024

High-performance cold-source field-effect transistors based on Cd3C2/ boron phosphide heterojunction

Materials Science and Engineering B

DOI

2024

Electronic properties of InSe/CNT heterojunctions with the modulation of electric field and vacancy defects

Computational Materials Science

DOI

2024

GeC/SiCx van der Waals heterojunction: Applications for water splitting and solar cell

Materials Science in Semiconductor Processing

DOI

2024

Interfacial properties in planar SiC/2D metals from first principles

The European Physical Journal B

DOI

2023

Ligand Exchange Reaction Enables Digital‐To‐Analog Resistive Switching and Artificial Synapse within Metal Nanoparticles

Advanced Functional Materials

DOI

2023

Electronic and optical properties of MoSSe/borophene heterojunctions with the modulation of electric field and vacancy defects

Materials Science and Engineering B

DOI

2023

Tunable Schottky barrier of in-plane MoSSe/Borophene heterojunctions under electric field and strain

Chemical Physics

DOI

2023

Electronic and optical properties of Be2C/graphene heterojunction from first-principles calculations

Computational Materials Science

DOI

2023

Ballistic transport in 5.1 nm monolayer boron phosphide transistors for high-performance applications

Current Applied Physics

DOI

2023

Excitonic solar cells based on van der Waals heterojunctions of Janus III–VI chalcogenide monolayers

Nanotechnology

DOI

2023

The interfacial properties of edge-contact heterojunction of SnSSe/metal from first principles

Applied Physics A

DOI

2022

Field-Created Coordinate Cation Bridges Enable Conductance Modulation and Artificial Synapse within Metal Nanoparticles

Nano Letters

DOI

2022

Tunable reverse rectification of layed Janus MSeS (M = Hf, Zr) and SnS2 heterojunctions

Journal of Computational Electronics

DOI

2022

Effect of different dielectrics on performance of sub-5.1 nm blue phosphorus Schottky barrier field-effect transistor from quantum transport simulation

Current Applied Physics

DOI

2022

Electronic properties of borophene based heterojunctions with MoS2 and WSe2

Chemical Physics

DOI

2022

Device Simulation of 5.1 nm High-Performance Field-Effect Transistors Based on Two-Dimensional Boron Phosphide

The Journal of Physical Chemistry C

DOI

2022

Influence of contact interface on electric transport in in-plane graphene/MoSSe heterojunction

Chemical Physics

DOI

2022

Electronic Transport Induced by Rotating Molecule in Molecular Devices

Russian Journal of Physical Chemistry A

DOI

2022

Interfacial contact and electronic properties in the heterojunction based on black phosphorus and borophene

Computational Materials Science

DOI

2022

Electronic properties of Borophene/InSe van der Waals heterostructures

Materials Science in Semiconductor Processing

DOI

2022

Influence of h-BN on electronic properties of GeS/InSe heterojunction

Applied Physics A

DOI

2021

基于十八硫醇修饰的Al0.6Ga0.4N MSM光电探测器研究

《光子学报》

2021

EFFECT OF ASYMMETRIC LATERAL LINKING GROUPS ON THE ELECTRONIC TRANSPORT IN MOLECULAR DEVICE

Surface Review and Letters

DOI

2021

Surface Modification of AlGaN Solar-Blind Ultraviolet MSM Photodetectors With Octadecanethiol

IEEE Transactions on Electron Devices

DOI

2021

Quantum Transport of Sub-10 nm Monolayer WGe2N4 Transistors

ACS Applied Electronic Materials

DOI

2021

Janus In2SeTe for photovoltaic device applications from first-principles study

Chemical Physics

DOI

2021

The in-plane graphene and boropheneβ12 contacted sub-10 nm monolayer black phosphorous Schottky barrier field-effect transistors

Materials Science in Semiconductor Processing

DOI

2021

The in-plane metal contacted 5.1 nm Janus WSSe Schottky barrier field-effect transistors

Nanotechnology

DOI

2021

Effect of edge contact on electronic transport in lateral Borophene/WTe2/Borophene heterojunctions

Computational Materials Science

DOI

2021

Tunable Schottky barrier in planar two-dimensional metal/black phosphorus heterojunctions

Physica E Low-dimensional Systems and Nanostructures

DOI

2021

INFLUENCE OF MOLECULE MODIFICATION AND LINKING GROUP ON ELECTRONIC TRANSPORT IN MOLECULAR DEVICES

Surface Review and Letters

DOI

2021

Enhanced performance of high Al-content AlGaN MSM photodetectors by electrode modification using hexadecanethiol

Optics Express

DOI

2021

The effect of different covalent bond connections and doping on transport properties of planar graphene/MoS 2 /graphene heterojunctions

Physical Chemistry Chemical Physics

DOI

2020

Van der Waals heterostructures of Janus XSeTe (X = Mo, W) and arsenene monolayers: A first principles study

Materials Science in Semiconductor Processing

DOI

2020

Electronic transport induced by doping on the electrodes in molecular devices

Journal of Theoretical and Computational Chemistry

DOI

2020

Electronic and optical properties of vertical borophene/MoS2 heterojunctions

Materials Chemistry and Physics

DOI

2020

Effect of the geometry of precursor crucibles on the growth of MoS 2 flakes by chemical vapor deposition

New Journal of Chemistry

DOI

2019

Width dependent rectifying behavior in Schottky heterojunction based on black phosphorene

Materials Chemistry and Physics

DOI

2019

Electronic transport induced by asymmetric adsorption site of sulfur in molecular device

Surface Science

DOI

2019

Spin-dependent transport in all-carbon multifunctional spintronic device

The European Physical Journal B

DOI

2018

Electronic transport induced by edge modification of graphene electrodes in single molecular device

Theoretical Chemistry Accounts

DOI

2018

Rectification in zigzag graphene/BN nanoribbon heterojunction

Modern Physics Letters B

DOI

2018

Influence of spatial distribution of molecule on the switching behavior: A first-principles study

Journal of Theoretical and Computational Chemistry

DOI

2018

Switching behavior induced by different substituents of group in single molecular device

The European Physical Journal B

DOI

2018

Switching and oscillation of current along quinone based molecular device with graphene electrodes

Chemical Physics

DOI

2018

Effects of different electrodes and substituent groups on molecular switching

Theoretical Chemistry Accounts

DOI

2018

Effect of the lateral linking groups on the switching behavior in single molecular device

Materials Chemistry and Physics

DOI

2018

Spin-dependent transport in a multifunctional spintronic device with graphene nanoribbon electrodes

Journal of Computational Electronics

DOI

2017

Effect of different substitution position on the switching behavior in single-molecule device with carbon nanotube electrodes

Chemical Physics

DOI

2017

Effect of edge modification on the rectification in graphene ribbons device

Physica E Low-dimensional Systems and Nanostructures

DOI

2017

First-principles study on photoswitching behavior and negative differential resistance in single molecule junction

Computational and Theoretical Chemistry

DOI

2017

Effect of the substitution of F on the photoswitching behavior in single molecular device

Physics Letters A

DOI

2017

FIRST-PRINCIPLES STUDY ON PHOTOSWITCHING BEHAVIOR IN SINGLE MOLECULE JUNCTION

Surface Review and Letters

DOI

2016

Electronic transport properties of a quinone-based molecular switch

The European Physical Journal B

DOI

2016

Reverse rectification and negative differential resistance effects in doped armchair graphene ribbons device

Applied Physics A

DOI

2016

Spin-dependent transport properties in covalent–organic molecular device with graphene nanoribbon electrodes

Computational and Theoretical Chemistry

DOI

2015

反铁磁Cr插入层对CoFe/MgO/CoFe磁性隧道结的隧穿磁电阻的影响

《原子与分子物理学报》

2015

Effect of N and Fe codoping on the electronic structure and optical properties of TiO2 from first-principles study

Journal of Semiconductors

DOI

2015

Ce、N共掺杂锐钛矿相TiO2光学性能的第一性原理研究

《人工晶体学报》

2015

First-principles study of the electronic transport properties of a dihydroazulene-based molecular optical switch

Computational and Theoretical Chemistry

DOI

2014

CoFe/Cu/MgAl2O4（001）/CoFe磁性隧道结的隧穿磁电阻效应

《微纳电子技术》

2014

The molecular spin filter constructed from 1D organic chain

Physics Letters A

DOI

2013

稀土材料铕铁硼磁性隧道结的第一性原理研究

《微纳电子技术》

2012

网版参数对单晶硅太阳电池栅线印刷的影响

《半导体技术》

2011

硼、氮掺杂C20的结构及其稳定性

《扬州大学学报(自然科学版)》

2020

Interaction-induced phase transitions of type-II Weyl semimetals

arXiv preprint

DOI