邱晨光｜北京大学｜学者主页

2026

Two-Dimensional Semiconductors for Postsilicon Electronics: From Transistors to Integrated Circuits

Yanglin Long, Haozhe Wang, Gangning Lou, Yanhong Zhou, Dehuan Meng, Lian‐Mao Peng, Chenguang Qiu

ACS Nano

2026

Single-crystal rhombohedral boron nitride wafers for integrated sliding ferroelectric memory

Jiajie Qi, Tian Gu, Jingfang Tu, Qiu Yang, Quanlin Guo, Guo Liangliang, Pan Wu, Le Chen, Mingkang Zhang, Chong Zhao, Enze Tian, Qianqian Yang, Kanghao Xie, Fuwei Yang, Bai Song, Linxing Zhang, Xiaorui Zheng, Xiaobo Lu, Enge Wang, Li Wang, Chenguang Qiu, Zhibin Zhang, Kaihui Liu

Nature Nanotechnology

精选作品

期刊论文

Two-Dimensional Semiconductors for Postsilicon Electronics: From Transistors to Integrated Circuits

Single-crystal rhombohedral boron nitride wafers for integrated sliding ferroelectric memory

Homo-metal-element mediated surface modification of sapphire for robust epitaxy of wafer-scale single-crystalline 2D semiconductors

Post-Moore two-dimensional integrated electronics for angstrom-nodes

Nanogate ferroelectric transistors with ultralow operation voltage of 0.6 V

超越硅基器件的二维晶体管：从理论到实验

Realizing Boltzmann Switching Limit in Carbon Nanotube Transistors through Combating Intertube Electrostatic Coupling

Self-Anchoring Process to Construct Highly-Aligned-Carbon Nanotube Transistors

Ultralow Power Cold-Fuse Memory Based on Metal-Oxide-CNT Structure

Two-dimensional indium selenide wafers for integrated electronics

Ultralow‐Power Highly‐Selective Near‐Infrared (≈850 nm) Carbon Nanotube Flexible Optoelectronic Synaptic Transistors for Real‐Time Trajectory Tracking

Low-power 2D gate-all-around logics via epitaxial monolithic 3D integration

带狄拉克源的超低功耗负电容晶体管研究

High-Performance Dual-Gate Transistors Based on Aligned Carbon Nanotubes

Yttrium-doping-induced metallization of molybdenum disulfide for ohmic contacts in two-dimensional transistors

Recent Experimental Breakthroughs on 2D Transistors: Approaching the Theoretical Limit

基于低维材料的神经形态器件研究进展

Eliminating Ferroelectric Hysteresis in All-Two-Dimensional Gate-Stack Negative-Capacitance Transistors

Ballistic two-dimensional InSe transistors

Strain-Free Layered Semiconductors for 2D Transistors with On-State Current Density Exceeding 1.3 mA μm –1

Publisher Correction: Soft-lock drawing of super-aligned carbon nanotube bundles for nanometre electrical contacts

Giant Negative Differential Resistance Effect Caused by Cutting off Acceptable Quantum States in Carbon Nanotube Tunneling Devices

Soft-lock drawing of super-aligned carbon nanotube bundles for nanometre electrical contacts

Erratum to: Field-effect at electrical contacts to two-dimensional materials

Field-effect at electrical contacts to two-dimensional materials

Can Carbon Nanotube Transistors Be Scaled Down to the Sub-5 nm Gate Length?

Host–Guest Molecular Interaction Enabled Separation of Large-Diameter Semiconducting Single-Walled Carbon Nanotubes

Suppression of leakage current in carbon nanotube field-effect transistors

A native oxide high-κ gate dielectric for two-dimensional electronics

Transconductance Amplification in Dirac‐Source Field‐Effect Transistors Enabled by Graphene/Nanotube Hereojunctions

Grain Size Engineering of Ferroelectric Zr-doped HfO 2 for the Highly Scaled Devices Applications

Insight Into Ballisticity of Room-Temperature Carrier Transport in Carbon Nanotube Field-Effect Transistors

Carbon Nanotube Complementary Gigahertz Integrated Circuits and Their Applications on Wireless Sensor Interface Systems

Carbon nanotube digital electronics

Low Residual Carrier Concentration and High Mobility in 2D Semiconducting Bi 2 O 2 Se

Dirac Electrons at the Source: Breaking the 60-mV/Decade Switching Limit

First Principles Simulation of Energy efficient Switching by Source Density of States Engineering

Dirac-source field-effect transistors as energy-efficient, high-performance electronic switches

Improving subthreshold swing to thermionic emission limit in carbon nanotube network film-based field-effect

Gigahertz integrated circuits based on carbon nanotube films

Scaling carbon nanotube CMOS FETs towards quantum limit

Atomic-Layer-Deposition Growth of an Ultrathin HfO2 Film on Graphene

Scaling carbon nanotube complementary transistors to 5-nm gate lengths

Scaling down contact length in complementary carbon nanotube field-effect transistors

Exploration of vertical scaling limit in carbon nanotube transistors

Performance projections for ballistic carbon nanotube FinFET at circuit level

Remarkable influence of slack on the vibration of a single-walled carbon nanotube resonator

Comparison of mobility extraction methods based on field-effect measurements for graphene

Carbon Nanotube Feedback-Gate Field-Effect Transistor: Suppressing Current Leakage and Increasing On/Off Ratio

Modularized Construction of General Integrated Circuits on Individual Carbon Nanotubes

Transient response of carbon nanotube integrated circuits

研究方向