梁世维｜湖南大学｜学者主页

2026

Avalanche Failure Mechanism of SiC MOSFETs After Total Ionizing Dose Irradiation

Zhifan Yang, Shiwei Liang, Lu Mi, Lei Shu, Zhan Li, Jun Wang, Zhikang Shuai

IEEE Transactions on Electron Devices

DOI

2026

Analysis on Irradiation Responses of 4.5-kV-Rated Trench-Gate IGBT Through Multicell Simulation

Liu Yang, Shou-Dao Huang, Shiwei Liang, Yuebin Zhou, Lu Mi, Daming Wang, Minghan Yao

IEEE Transactions on Nuclear Science

DOI

2025

A Unified Physical PSPICE Model of SiC MOSFET With Automatic Parameter Extraction

Xin Yang, Qing Li, Xiaodi Wang, Shiwei Liang, Guoyou Liu

IEEE Journal of Emerging and Selected Topics in Power Electronics

DOI

2025

New Observations on Carrier Transport and Thermal Behavior in IGBT During Heavy-ion Radiation

Lu Mi, Shiwei Liang, Jiaqi Chene, Liu Yang, Daming Wang, Xin-Yi Tu, Jun Wang, Wan-Jun Chen

2025 6th International Conference on Radiation Effects of Electronic Devices (ICREED)

DOI

2025

Investigation on Electrical Properties and Safe-Operating Area for Novel Split-gate IGBTs

Xuanting Song, Jun Wang, Gao-Qiang Deng, Zijie Zheng, Yongzhou Zou, Shiwei Liang, Yu-Xing Dai, Kamal Al-Haddad

2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI

2025

UIS Ruggedness of Si/SiC Hybrid Switches

Chuanqi Zhang, Xuanting Song, Shiwei Liang, Yu-Xing Dai, Jun Wang, Kamal Al-Haddad

2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI

2025

A Low Loss Trench Lateral IGBT with Superior Switching Performance and Strong Robustness

Xuanting Song, Jun Wang, Shiwei Liang

2025 IEEE 8th International Electrical and Energy Conference (CIEEC)

DOI

2025

Investigation on Current and Thermal Balancing Phenomenon in IGBT During Heavy-ion Radiation Through Multi-cell TCAD Simulation

Lu Mi, Shiwei Liang, Jiaqi Chen, Liu Yang, Daming Wang, Jun Wang

2025 IEEE 8th International Electrical and Energy Conference (CIEEC)

DOI

2024

Observations on Short-Circuit and Avalanche Robustness of Asymmetric trench-gate SiC MOSFETs after γ-ray Radiation

Jiaqi Chen, Shiwei Liang, Boyu Ran, Jun Wang

DOI

2024

Physical insight into turn‐on transient of silicon carbide gate turn‐off thyristor

Hangzhi Liu, Shiwei Liang, Yuming Zhou, Jun Wang

IET Power Electronics

DOI

2024

Dynamic Degradation of Planar-Gate SiC MOSFETs After Total Ionizing Dose Radiation

Shiwei Liang, Lei Shu, Jun Wang, Gao-Qiang Deng, Liang Wang

IEEE Transactions on Electron Devices

DOI

2024

Improving Single-Event Effect Performance of SiC MOSFET by Excess Hole Extraction

Shiwei Liang, Yu Yang, Jiaqi Chen, Lei Shu, Liang Wang, Jun Wang

IEEE transactions on device and materials reliability

DOI

2024

Modelling the 3-D Charge-Sharing in Field-Plate Power MOSFETs With Circular Layouts

Gao-Qiang Deng, Jun Wang, Xuanting Song, Yang Gao, Shiwei Liang, Xiao-Jun Xu

IEEE Transactions on Electron Devices

DOI

2024

Theoretical Analysis and Experimental Characterization of 1.2-kV 4H-SiC Planar Split-Gate MOSFET With Source Field Plate

Hengyu Yu, Jun Wang, Jin-Yi Zhang, Shiwei Liang, Z. Shen

IEEE Transactions on Electron Devices

DOI

2023

Effects of Gamma Irradiation on Switching Characteristics of SiC MOSFET Power Devices of Different Structures

Lei Shu, Huai-Lin Liao, Ziyuan Wu, Xingyu Fang, Shiwei Liang, Tongde Li, Liang Wang, Jui-Pin Wang, Yuan-Fu Zhao

Electronics

DOI

2023

A Fast-Recovery Split Gate Trench MOSFET Integrated with Area-Efficient Schottky Contacts

Chen Tan, Gao-Qiang Deng, Jun Wang, Yi-Fan Wu, Shiwei Liang

2023 2nd Asia Power and Electrical Technology Conference (APET)

DOI

2023

Investigation on Single Pulse Avalanche Failure of 3.3kV planar-SiC power MOSFETs

Haonan Chen, Jun Wang, Ruixiao Dong, Jiatao Yao, Shiwei Liang

2023 IEEE PELS Students and Young Professionals Symposium (SYPS)

DOI

2023

Comparison of Gamma Irradiation Effects on Short Circuit Characteristics of SiC MOSFET Power Devices between Planar and Trench Structures

Lei Shu, Huai-Lin Liao, Ziyuan Wu, Yan-yan Li, Xingyu Fang, Shiwei Liang, Tongde Li, Liang Wang, Jui-Pin Wang, Yuan-Fu Zhao

Electronics

DOI

2023

Investigation on Dynamic Degradation of SiC MOSFETs after Total Ionizing Dose Radiation

Shiwei Liang, Jun Wang, Lei Shu, Yu Yang, Ziyuan Wu, Tongde Li, Liang Wang, Gao-Qiang Deng, Fan Fan, Chengjie Wang

European Conference on Cognitive Ergonomics

DOI

2023

Modeling Irradiation-Induced Degradation for 4H-SiC Power MOSFETs

Shiwei Liang, Yu Yang, Lei Shu, Ziyuan Wu, Bin Chen, Hengyu Yu, Hangzhi Liu, Liang Wang, Tongde Li, Gaoqiang Deng, Jui-Pin Wang

IEEE Transactions on Electron Devices

DOI

2023

3-D Segmented Gate Concept: A New IGBT Solution for Reduced Loss and Improved Safe-Operating Area

Gaoqiang Deng, Jui-Pin Wang, Yifan Wu, Chen Tan, Shiwei Liang

IEEE Transactions on Electron Devices

DOI

2023

Observations on Ruggedness Degradation of Planar-gate SiC MOSFETs after Total Ionizing Dose Radiation

Shiwei Liang, Ziyuan Wu, Lei Shu, Jun Wang, Haonan Chen, Gao-Qiang Deng, Zhanwei Shen, Fan Fan, Chengjie Wang

European Conference on Cognitive Ergonomics

DOI

2023

Total Ionizing Dose Radiation Effect on Avalanche Robustness of 1200V Trench-type SiC Power MOSFETs

Jiaqi Chen, Shiwei Liang, Jun Wang

China International Forum on Solid State Lighting

DOI

2023

Investigation on Dynamic Characteristic Variations Caused by TID for SiC MOSFET Power Devices

Lei Shu, Huai-Lin Liao, Ziyuan Wu, Xingyu Fang, Shiwei Liang, Tongde Li, Shi-Wei Shen, Liang Wang, Yuan-Fu Zhao

2023 5th International Conference on Radiation Effects of Electronic Devices (ICREED)

DOI

2022

A 100‐V trench power MOSFET with taper‐shielded gate and non‐uniform drift region doping profile

Gaoqaing Deng, Jun Wang, Chen Tan, Yifan Wu, Shiwei Liang, Wai Tung Ng

IET Power Electronics

DOI

2022

1.2‐kV silicon carbide planar split‐gate MOSFET with source field plate for superior figure‐of‐merits

Hengyu Yu, Jun Wang, Shiwei Liang, Gaoqiang Deng, Hangzhi Liu, Bing Ji, Z. John Shen

IET Power Electronics

DOI

2022

Modeling and Analysis of SiC GTO Thyristor’s Dynamic Turn-On Transient

Hangzhi Liu, Jun Wang, Shiwei Liang, Hengyu Yu, Gaoqiang Deng, Yu-Wei Wang, Z. Shen

IEEE Transactions on Electron Devices

DOI

2022

Understanding the Degradation of 1.2-kV Planar-Gate SiC MOSFETs Under Repetitive Over-Load Current Stress

Hengyu Yu, Shiwei Liang, Jun Wang, Xi Jiang, Bo Wang, Y. Yang, Yu-Wei Wang, Yi-Qiang Chen

IEEE Journal of Emerging and Selected Topics in Power Electronics

DOI

2022

A Novel IGBT with Double Buffer Layers for High Temperature Operation

Qian Zhang, Kai-Qian Xiao, Jui-Pin Wang, Gaoqiang Deng, Shiwei Liang

2022 IEEE 3rd China International Youth Conference on Electrical Engineering (CIYCEE)

DOI

2022

Investigation on SiC MOSFETs with Long Time Nitridation Treatment under Dynamic High Temperature Gate Stress

Ziyuan Wu, Shiwei Liang, Gaoqiang Deng, Jui-Pin Wang

IEEE Power Engineering and Automation Conference

DOI

2022

Exploration on Electrical Isolation Between High-Voltage SiC Thyristor and Small-Signal Devices for Smart Power Devices

Shiwei Liang, Hangzhi Liu, Hengyu Yu, Bin Chen, Jun Wang, Gaoqiang Deng, Z. Shen

IEEE Transactions on Electron Devices

DOI

2022

A Novel 4H-SiC JBS-Integrated MOSFET With Self-Pinching Structure for Improved Short-Circuit Capability

Hengyu Yu, Jun Wang, Gaoqiang Deng, Shiwei Liang, Hangzhi Liu, Z. Shen

IEEE Transactions on Electron Devices

DOI

2021

A novel SiC power MOSFET with integrated polySi/SiC heterojunction freewheeling diode

Shiwei Liang, Hengyu Yu, Hangzhi Liu, Yuwei Wang, Jun Wang

Semiconductor Science and Technology

DOI

2021

Numerical Study of SiC MOSFET With Integrated n-/n-Type Poly-Si/SiC Heterojunction Freewheeling Diode

Hengyu Yu, Shiwei Liang, Hangzhi Liu, Jun Wang, Z. Shen

IEEE Transactions on Electron Devices

DOI

2021

High dv/dt in High Voltage SiC IGBT and Method of Suppression

Hangzhi Liu, Jiaqi Guo, Wei Yue, Hengyu Yu, Shiwei Liang, Gaoqiang Deng, Yu-Wei Wang, Lin-Feng Deng, Yu-Ming Zhou, Jun Wang, Z. Shen

2021 IEEE 1st International Power Electronics and Application Symposium (PEAS)

DOI

2021

Evaluation of High-Voltage 4H-SiC Gate Turn-off Thyristor for Pulsed Power Application

Shiwei Liang, Jiaqi Guo, Hangzhi Liu, Jun Wang

2021 IEEE 1st International Power Electronics and Application Symposium (PEAS)

DOI

2020

Influence of N-drift Layer Parameters on Static and Dynamic Performances of Ultra-high Voltage SiC IGBT

Wenjuan Deng, Hangzhi Liu, Shiwei Liang, Fang Fang, Jun Wang

2020 IEEE 9th International Power Electronics and Motion Control Conference (IPEMC2020-ECCE Asia)

DOI

2020

Monolithic Integration of SiC Power BJT and Small-Signal BJTs for Power ICs

Shiwei Liang, Jun Wang, Lin-Feng Deng, Fang Fang, Z. Shen

IEEE Journal of Emerging and Selected Topics in Power Electronics

DOI

2020

Physical modeling and design optimization of 4H-SiC insulated gate bipolar transistors for dv/dt reduction

Hangzhi Liu, Jun Wang, Shiwei Liang, Hengyu Yu, Wenjuan Deng

Semiconductor Science and Technology

DOI

2020

Investigation on 4H-SiC gate turn-off thyristor with direct carrier extraction access to drift region for power conversion applications

Shiwei Liang, Jun Wang, Fang Fang, Hangzhi Liu, Wenjuan Deng

Semiconductor Science and Technology

DOI

2019

Optimization Design of Isolation Rings in Monolithically Integrated 1200V SiC Transistor and Antiparallel Diode for Improved Blocking Voltage

Shiwei Liang, Jun Wang, Fang Fang, Linfeng Deng, Z. John Shen

IEEE Journal of Emerging and Selected Topics in Power Electronics

DOI

2019

Evaluation on Dynamic Switching Noise and Power Loss in High-voltage SiC IGBT

Hangzhi Liu, Xin Yin, Wenjuan Deng, Shiwei Liang, Fang Fang, Jun Wang

2019 IEEE 3rd International Electrical and Energy Conference (CIEEC)

DOI

2019

Analysis of Parallel Operation of 4H-SiC GTOs

Fang Fang, Shiwei Liang, Xin Yin, Hangzhi Liu, Wenjuan Deng, Jun Wang, K. Zhou, Xiao-Peng Cao

2019 IEEE 3rd International Electrical and Energy Conference (CIEEC)

DOI

2019

An Improved Proportional Base Driver for Minimizing Driver Power Consumption of SiC BJT Over Wide Current and Temperature Range

Shiwei Liang, Jun Wang, Lin-Feng Deng, Yize Shi, Xin Yin, Z. Shen

IEEE Journal of Emerging and Selected Topics in Power Electronics

DOI

2019

An Improved SPICE Model of SiC BJT Incorporating Surface Recombination Effect

Jun Wang, Shiwei Liang, Lin-Feng Deng, Xin Yin, Z. Shen

IEEE transactions on power electronics

DOI

2019

Influence of Device Parameter and Parasitic Inductances on Transient Behaviors of Parallel Connection of SiC GTOs

Shiwei Liang, Zhi-Qiang Li, K. Zhou, Lin-Feng Deng, Jun-Tao Li, Jun Wang

International Conference on Electron Devices and Solid-State Circuits

DOI

2018

A modified behavior spice model for SiC BJT

Shiwei Liang, Jun Wang, Zhi-Gao Peng, Guanghui Chen, Xin Yin, Z. Shen, Lin-Feng Deng

Applied Power Electronics Conference

DOI

2018

A New Proportional Base Driver Technique for Minimizing Driver Loss of SiC BJT

Shiwei Liang, Lin-Feng Deng, Zhi-Gao Peng, Yize Shi, Z. Shen, Jun Wang

European Conference on Cognitive Ergonomics

DOI

2018

Experimental Comparison of SiC MOSFET and BJT

Yize Shi, Shiwei Liang, Fang Fang, Jun Wang

IEEE Power Engineering and Automation Conference

DOI

精选作品

期刊论文

Avalanche Failure Mechanism of SiC MOSFETs After Total Ionizing Dose Irradiation

Analysis on Irradiation Responses of 4.5-kV-Rated Trench-Gate IGBT Through Multicell Simulation

A Unified Physical PSPICE Model of SiC MOSFET With Automatic Parameter Extraction

New Observations on Carrier Transport and Thermal Behavior in IGBT During Heavy-ion Radiation

Investigation on Electrical Properties and Safe-Operating Area for Novel Split-gate IGBTs

UIS Ruggedness of Si/SiC Hybrid Switches

A Low Loss Trench Lateral IGBT with Superior Switching Performance and Strong Robustness

Investigation on Current and Thermal Balancing Phenomenon in IGBT During Heavy-ion Radiation Through Multi-cell TCAD Simulation

Observations on Short-Circuit and Avalanche Robustness of Asymmetric trench-gate SiC MOSFETs after γ-ray Radiation

Physical insight into turn‐on transient of silicon carbide gate turn‐off thyristor

Dynamic Degradation of Planar-Gate SiC MOSFETs After Total Ionizing Dose Radiation

Improving Single-Event Effect Performance of SiC MOSFET by Excess Hole Extraction

Modelling the 3-D Charge-Sharing in Field-Plate Power MOSFETs With Circular Layouts

Theoretical Analysis and Experimental Characterization of 1.2-kV 4H-SiC Planar Split-Gate MOSFET With Source Field Plate

Effects of Gamma Irradiation on Switching Characteristics of SiC MOSFET Power Devices of Different Structures

A Fast-Recovery Split Gate Trench MOSFET Integrated with Area-Efficient Schottky Contacts

Investigation on Single Pulse Avalanche Failure of 3.3kV planar-SiC power MOSFETs

Comparison of Gamma Irradiation Effects on Short Circuit Characteristics of SiC MOSFET Power Devices between Planar and Trench Structures

Investigation on Dynamic Degradation of SiC MOSFETs after Total Ionizing Dose Radiation

Modeling Irradiation-Induced Degradation for 4H-SiC Power MOSFETs

3-D Segmented Gate Concept: A New IGBT Solution for Reduced Loss and Improved Safe-Operating Area

Observations on Ruggedness Degradation of Planar-gate SiC MOSFETs after Total Ionizing Dose Radiation

Total Ionizing Dose Radiation Effect on Avalanche Robustness of 1200V Trench-type SiC Power MOSFETs

Investigation on Dynamic Characteristic Variations Caused by TID for SiC MOSFET Power Devices

A 100‐V trench power MOSFET with taper‐shielded gate and non‐uniform drift region doping profile

1.2‐kV silicon carbide planar split‐gate MOSFET with source field plate for superior figure‐of‐merits

Modeling and Analysis of SiC GTO Thyristor’s Dynamic Turn-On Transient

Understanding the Degradation of 1.2-kV Planar-Gate SiC MOSFETs Under Repetitive Over-Load Current Stress

A Novel IGBT with Double Buffer Layers for High Temperature Operation

Investigation on SiC MOSFETs with Long Time Nitridation Treatment under Dynamic High Temperature Gate Stress

Exploration on Electrical Isolation Between High-Voltage SiC Thyristor and Small-Signal Devices for Smart Power Devices

A Novel 4H-SiC JBS-Integrated MOSFET With Self-Pinching Structure for Improved Short-Circuit Capability

A novel SiC power MOSFET with integrated polySi/SiC heterojunction freewheeling diode

Numerical Study of SiC MOSFET With Integrated n-/n-Type Poly-Si/SiC Heterojunction Freewheeling Diode

High dv/dt in High Voltage SiC IGBT and Method of Suppression

Evaluation of High-Voltage 4H-SiC Gate Turn-off Thyristor for Pulsed Power Application

Influence of N-drift Layer Parameters on Static and Dynamic Performances of Ultra-high Voltage SiC IGBT

Monolithic Integration of SiC Power BJT and Small-Signal BJTs for Power ICs

Physical modeling and design optimization of 4H-SiC insulated gate bipolar transistors for dv/dt reduction

Investigation on 4H-SiC gate turn-off thyristor with direct carrier extraction access to drift region for power conversion applications

Optimization Design of Isolation Rings in Monolithically Integrated 1200V SiC Transistor and Antiparallel Diode for Improved Blocking Voltage

Evaluation on Dynamic Switching Noise and Power Loss in High-voltage SiC IGBT

Analysis of Parallel Operation of 4H-SiC GTOs

An Improved Proportional Base Driver for Minimizing Driver Power Consumption of SiC BJT Over Wide Current and Temperature Range

An Improved SPICE Model of SiC BJT Incorporating Surface Recombination Effect

Influence of Device Parameter and Parasitic Inductances on Transient Behaviors of Parallel Connection of SiC GTOs

A modified behavior spice model for SiC BJT

A New Proportional Base Driver Technique for Minimizing Driver Loss of SiC BJT

Experimental Comparison of SiC MOSFET and BJT