黄少云｜北京大学｜学者主页

2026

Step-Necked Tunnel Constrictions in Si Nanowires Enable 40 K Quantum-Dot Single-Hole Transistors without High-Resolution Lithography

Zhiyan Hu, Shichang Fan, Tianyao Wei, Lei Yan, Junyang An, l zhi wei, Songlin Li, Shaoyun Huang, Junzhuan Wang, Linwei Yu

ACS Nano

DOI

2026

Thickness-driven emergence of a highly insulating bulk state in SnTe nanoplates

Xu Yan, Sijin Li, Yujiao Ma, Shimin Hou, Shaoyun Huang, Yingjie Xing

Nanoscale

DOI

2025

Thin SnTe Nanoplates with Low Carrier Density

Yan Xu, Sijin Li, Yujiao Ma, Shimin Hou, Shaoyun Huang, Yingjie Xing

ACS Applied Electronic Materials

DOI

2025

Compact radio frequency module for gate-defined quantum dot qubits

Zhiyuan Wu, Zheng Zhou, Xuanyue Pan, Yixin Li, Shaoyun Huang

Applied Physics Letters

DOI

2024

The exchange interaction between neighboring quantum dots: physics and applications in quantum information processing

Zheng Gang Zhou, Yixin Li, Zhiyuan Wu, Xinping Ma, Shichang Fan, Shaoyun Huang

Journal of Semiconductors

DOI

2023

Tunable transport properties of dual-gated InAs/GaSb core/shell nanowires

Zhencun Pan, D. Pan, Yifeng Zhou, Jianhua Zhao, H.-Q. Xu, Shaoyun Huang

Journal of Applied Physics

DOI

2023

Quantum transport quality of a processed undoped Ge/SiGe heterostructure

Yi-Xin Li, Zhen-Zhen Kong, Shimin Hou, Guilei Wang, Shaoyun Huang

Physical review B

DOI

2023

Multiple channel transport properties of topological surface states in SmB6 nanoribbons

Yujiao Ma, Yugui Cui, Yi Chu, Yan Xu, Yingjie Xing, Shaoyun Huang

Applied Physics Letters

DOI

2022

Fabrication and characterization of InSb nanosheet/hBN/graphite heterostructure devices

Li Zhang, Yuan-Jie Chen, D. Pan, Shaoyun Huang, Jianhua Zhao, Hong-Qi Xu

Nanotechnology

DOI

2022

Surface-bulk coupling in a Bi2Te3 nanoplate grown by van der Waals epitaxy.

Xiao-Bo Li, Mengmeng Meng, Shaoyun Huang, Congwei Tan, Congcong Zhang, Hai-Lin Peng, H.-Q. Xu

Nanoscale

DOI

2021

A double quantum dot defined by top gates in a single crystalline InSb nanosheet

Yuan-Jie Chen, Shaoyun Huang, Jingwei Mu, Dong Pan, Jianhua Zhao, H.-Q. Xu

Chinese Physics B

DOI

2021

A highly tunable quadruple quantum dot in a narrow bandgap semiconductor InAs nanowire.

Jingwei Mu, Shaoyun Huang, Zhi-Hai Liu, Weijie Li, Ji-Yin Wang, D. Pan, Guang-Yao Huang, Yuan-Jie Chen, Jianhua Zhao, H.-Q. Xu

Nanoscale

DOI

2021

Anisotropic magnetoresistance as evidence of spin-momentum inter-locking in topological Kondo insulator SmB6 nanowires.

Yugui Cui, Y. Chu, Zhencun Pan, Yingjie Xing, Shaoyun Huang, Hong-Qi Xu

Nanoscale

DOI

2021

Charge detection of a quantum dot under different tunneling barrier symmetries and bias voltages.

Weijie Li, Jingwei Mu, Zhi-Hai Liu, Shaoyun Huang, D. Pan, Yuan-Jie Chen, Ji-Yin Wang, Jianhua Zhao, Hong-Qi Xu

Nanoscale

DOI

2020

Erratum: Measurements of anisotropic g-factors for electrons in InSb nanowire quantum dots (2021 Nanotechnology 32 020002)

Jingwei Mu, Shaoyun Huang, Ji-Yin Wang, Guang-Yao Huang, Xuming Wang, H.-Q. Xu

Nanotechnology

DOI

2020

A charge sensor integration to tunable double quantum dots on two neighboring InAs nanowires.

Xuming Wang, Shaoyun Huang, Ji-Yin Wang, D. Pan, Jianhua Zhao, H.-Q. Xu

Nanoscale

DOI

2020

Detection of charge states of an InAs nanowire triple quantum dot with an integrated nanowire charge sensor

Weijie Li, Jingwei Mu, Shaoyun Huang, D. Pan, Jianhua Zhao, Hao Xu

Applied Physics Letters

DOI

2020

Strong and tunable spin–orbit interaction in a single crystalline InSb nanosheet

Yuan-Jie Chen, Shaoyun Huang, D. Pan, Jianhong Xue, Li Zhang, Jianhua Zhao, Hao Xu

npj 2D Materials and Applications

DOI

2020

Measurements of anisotropic g-factors for electrons in InSb nanowire quantum dots

Jingwei Mu, Shaoyun Huang, Ji-Yin Wang, Guang-Yao Huang, Xuming Wang, H.-Q. Xu

Nanotechnology

DOI

2019

Universal conductance fluctuations and phase-coherent transport in a semiconductor Bi2O2Se nanoplate with strong spin-orbit interaction.

Mengmeng Meng, Shaoyun Huang, Congwei Tan, Jin-Xiong Wu, Xiao-Bo Li, Hai-Lin Peng, Hong-Qi Xu

Nanoscale

DOI

2019

Gate tunable energy gap and negative magnetoresistance of InAs/GaSb core/shell nanowires

Zhencun Pan, Shaoyun Huang, Yifeng Zhou, D. Pan, Jianhua Zhao, Hong-Qi Xu

2019 Compound Semiconductor Week (CSW)

DOI

2019

A Single‐Electron Transistor Made of a 3D Topological Insulator Nanoplate

Yu-Mei Jing, Shaoyun Huang, Jin-Xiong Wu, Mengmeng Meng, Xiao-Bo Li, Yu Zhou, Hai-Lin Peng, Hong-Qi Xu

Advances in Materials

DOI

2019

Growth Mechanism of SmB6 Nanowires Synthesized by Chemical Vapor Deposition: Catalyst-Assisted and Catalyst-Free

Y. Chu, Yugui Cui, Shaoyun Huang, Yingjie Xing, Hong-Qi Xu

Nanomaterials

DOI

2018

Anisotropic Pauli Spin-Blockade Effect and Spin-Orbit Interaction Field in an InAs Nanowire Double Quantum Dot.

Ji-Yin Wang, Guang-Yao Huang, Shaoyun Huang, Jianhong Xue, D. Pan, Jianhua Zhao, Hong-Qi Xu

Nano letters (Print)

DOI

2018

Dimension Engineering of High-Quality InAs Nanostructures on a Wafer Scale.

D. Pan, Ji-Yin Wang, Wei Zhang, Lujun Zhu, Xiaojun Su, Furong Fan, Yuhao Fu, Shaoyun Huang, D. Wei, Li-Jun Zhang, Man-Ling Sui, A. Yartsev, Hong-Qi Xu, Jianhua Zhao

Nano letters (Print)

DOI

2018

Applied Stress-Assisted Growth of Single Crystal γ-Fe2O3 Nanowires

Lan Lu, Ligen Hong, Y. Chu, Hua-Yong Pan, Shaoyun Huang, Yingjie Xing, Hong-Qi Xu

Nanomaterials

DOI

2018

Magnetotransport in antidot arrays of three-dimensional topological insulators

Yu-Mei Jing, Shaoyun Huang, Jin-Xiong Wu, Hai-Lin Peng, Hong-Qi Xu

DOI

2018

Mott variable-range hopping transport in a MoS2 nanoflake

Jianhong Xue, Shaoyun Huang, Ji-Yin Wang, H.-Q. Xu

RSC Advances

DOI

2018

Strong spin-orbit interaction and magnetotransport in semiconductor Bi2O2Se nanoplates.

Mengmeng Meng, Shaoyun Huang, Congwei Tan, Jin-Xiong Wu, Yu-Mei Jing, Hai-Lin Peng, Hong-Qi Xu

Nanoscale

DOI

2018

Gate defined quantum dot realized in a single crystalline InSb nanosheet

Jianhong Xue, Yuan-Jie Chen, D. Pan, Ji-Yin Wang, Jianhua Zhao, Shaoyun Huang, H.-Q. Xu

Applied Physics Letters

DOI

2017

Synthesis of Bi₂Te₃ Nanotubes Using Te Nanotubes as a Template.

Zhen Guo, Mengmeng Meng, Ming Li, Jing-Yun Wang, Shaoyun Huang, Yingjie Xing, Hong-Qi Xu

Journal of Nanoscience and Nanotechnology

DOI

2017

Synthesis of Mn-doped indium antimonide nanowires by multi-step depositions and annealing

Qiu-Ju Zhang, Y. Cao, Kan Li, Hua-Yong Pan, Shaoyun Huang, Yingjie Xing, Hong-Qi Xu

DOI

2017

Coherent Transport in a Linear Triple Quantum Dot Made from a Pure-Phase InAs Nanowire.

Ji-Yin Wang, Shaoyun Huang, Guang-Yao Huang, D. Pan, Jianhua Zhao, H.-Q. Xu

Nano letters (Print)

DOI

2017

High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se.

Jin-Xiong Wu, Hongtao Yuan, Mengmeng Meng, Cheng Chen, Yan Sun, Zhuoyu Chen, W. Dang, Congwei Tan, Yujing Liu, Jian-Bo Yin, Yubing Zhou, Shaoyun Huang, H.-Q. Xu, Yi Cui, H. Hwang, Zhong-Fan Liu, Yu-Lin Chen, Binghai Yan, Hai-Lin Peng

Nature Nanotechnology

DOI

2017

Epitaxial Growth of Ternary Topological Insulator Bi2 Te2 Se 2D Crystals on Mica.

Yujing Liu, Ming-Hui Tang, Mengmeng Meng, Mingzhan Wang, Jin-Xiong Wu, Jian-Bo Yin, Yubing Zhou, Yunfan Guo, Congwei Tan, W. Dang, Shaoyun Huang, H.-Q. Xu, Yong Wang, Hai-Lin Peng

Small

DOI

2016

Covalently bonded single-molecule junctions with stable and reversible photoswitched conductivity

Chuan-Cheng Jia, A. Migliore, N. Xin, Shaoyun Huang, Jin-Ying Wang, Qi Yang, Shuo-Pei Wang, Hong-Liang Chen, Duo-Ming Wang, B. Feng, Zhi-Rong Liu, Guang-Yu Zhang, Da-Hui Qu, H. Tian, M. Ratner, H.-Q. Xu, A. Nitzan, Xue-Feng Guo

Science

DOI

2016

Measurements of the spin-orbit interaction and Landé g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime

Ji-Yin Wang, Shaoyun Huang, Z. Lei, D. Pan, Jianhua Zhao, H.-Q. Xu

DOI

2016

Schottky barrier heights at the interfaces between pure-phase InAs nanowires and metal contacts

B. Feng, Shaoyun Huang, Ji-Yin Wang, D. Pan, Jiang-sha Zhao, H.-Q. Xu

DOI

2016

Growth of High Material Quality Group III-Antimonide Semiconductor Nanowires by a Naturally Cooling Process

Kan Li, W. Pan, Jing-Yun Wang, Hua-Yong Pan, Shaoyun Huang, Yingjie Xing, H.-Q. Xu

Nanoscale Research Letters

DOI

2015

Weak antilocalization and electron-electron interaction in coupled multiple-channel transport in a Bi2Se3 thin film.

Yu-Mei Jing, Shaoyun Huang, Kai Zhang, Jin-Xiong Wu, Yunfan Guo, Hai-Lin Peng, Zhong-Fan Liu, H.-Q. Xu

Nanoscale

DOI

2015

Conducting channel wholly-wrapped nanowire plane surrounding-gate field effect device and preparation method therefor

Qiang Li, Wei Pan, Shaoyun Huang, Hong-Qi Xu

2015

Patterning two-dimensional chalcogenide crystals of Bi2Se3 and In2Se3 and efficient photodetectors

Wenshan Zheng, Tian Xie, Yu Zhou, Yu-Chen Chen, Wei Jiang, Shuli Zhao, Jin-Xiong Wu, Yu-Mei Jing, Yue Wu, Guan-Chu Chen, Yunfan Guo, Jian-Bo Yin, Shaoyun Huang, Hong-Qi Xu, Zhong-Fan Liu, Hai-Lin Peng

Nature Communications

DOI

2014

Suspended InAsnanowire gate-all-around field-effect transistors

Li Qiang, Shaoyun Huang, D. Pan, Jing-Yun Wang, Jianhua Zhao, Hong-Qi Xu

DOI

2013

微纳器件热传导中的基础物理问题

张刚，黄少云

《物理》

2013

Si and Ge nanowire based quantum dots for spin qubits

Shaoyun Huang, Sung-Kwon Shin, N. Fukata, K. Ishibashi, Hong-Qi Xu

2013

Enhanced anisotropic effective g factors of an Al0.25Ga0.75N/GaN heterostructure based quantum point contact.

Fang-Chao Lu, N. Tang, Shaoyun Huang, M. Larsson, I. Maximov, M. Graczyk, Junxi Duan, Si-Dong Liu, W. Ge, Fu-Jun Xu, B. Shen

Nano letters (Print)

DOI

2013

Synthesis, properties, and top-gated metal–oxide–semiconductor field-effect transistors of p-type GaSb nanowires

Guangwei Xu, Shaoyun Huang, Xiao-Ye Wang, Bin Yu, Hui Zhang, Tao Yang, Hong-Qi Xu, L. Dai

DOI

2013

Fundamental physics issues of thermal conduction in nanoscale devices

Gang Zhang, Shaoyun Huang

Wuli

2012

Top-gated germanium nanowire quantum dots in a few-electron regime

Sung-Kwon Shin, Shaoyun Huang, N. Fukata, K. Ishibashi

DOI

2012

Temperature Evolution of Spin-Polarized Electron Tunneling in Silicon Nanowire–Permalloy Lateral Spin Valve System

J. Tarun, Shaoyun Huang, Y. Fukuma, H. Idzuchi, Y. Otani, N. Fukata, K. Ishibashi, S. Oda

DOI

2011

A single-electron transistor and an even-odd effect in chemically synthesized Ge nanowires

Shaoyun Huang, Sung-Kwon Shin, N. Fukata, K. Ishibashi

DOI

2011

Single-Electron Transport through Semiconducting Nanowires: A Comparison between Silicon and Germanium

Sung-Kwon Shin, Shaoyun Huang, N. Fukata, K. Ishibashi

DOI

2011

Demonstration of spin valve effects in silicon nanowires

J. Tarun, Shaoyun Huang, Y. Fukuma, H. Idzuchi, Y. Otani, N. Fukata, K. Ishibashi, S. Oda

DOI

2011

Top-gated single-electron transistor in germanium nanowires

Sung-Kwon Shin, Shaoyun Huang, N. Fukata, K. Ishibashi

Device Research Conference

DOI

2010

Silicon Nanocrystal Flash Memory

S. Oda, Shaoyun Huang

DOI

2010

Single-electron transport through a Germanium-Nanowire Quantum Dot

Sung-Kwon Shin, Shaoyun Huang, N. Fukata, K. Ishibashi

DOI

2008

Classical Coulomb blockade of a silicon nanowire dot

Shaoyun Huang, N. Fukata, M. Shimizu, Tomohiro Yamaguchi, T. Sekiguchi, K. Ishibashi

DOI

2008

An n-type silicon nanowire dot based single-electron transistor

Shaoyun Huang, M. Shimizu, N. Fukata, Takanori Sekiguchi, Tomohiro Yamaguchi, K. Ishibashi

IEEE Silicon Nanoelectronics Workshop

DOI

2006

Optical and electrical properties of Zn1-xCdxO films grown on Si substrates by reactive radio-frequency magnetron sputtering

Cheng Sun, P. Xin, Chun-Yu Ma, Zhi-jie Liu, Qing-Yu Zhang, Yumei Wang, Z.-J. Yin, Shaoyun Huang, Ting-Yong Chen

DOI

2005

Charge storage in nitrided nanocrystalline silicon dots

Shaoyun Huang, S. Oda

DOI

2005

TRANSPORT PROPERTIES OF μc-Si:H FILMS PREPARED BY VERY HIGH HYDROGEN-DILUTED SILANE PLASMA

Jian-Jun Shi, Shaoyun Huang, Kun-Ji Chen, Xin-Fan Huang, Jun Xu

DOI

2005

Charge operation of nitrided nanocrystalline silicon dot memory devices

Shaoyun Huang, H. Mizuta, S. Oda

2004

Toward long-term retention-time single-electron-memory devices based on nitrided nanocrystalline silicon dots

Shaoyun Huang, K. Arai, K. Usami, S. Oda

IEEE transactions on nanotechnology

DOI

2003

Electron trapping, storing, and emission in nanocrystalline Si dots by capacitance–voltage and conductance–voltage measurements

Shaoyun Huang, Souri Banerjee, Raymond T. Tung, S. Oda

DOI

2003

Quantum confinement energy in nanocrystalline silicon dots from high-frequency conductance measurement

Shaoyun Huang, Souri Banerjee, Raymond T. Tung, S. Oda

DOI

2003

Operation of nanocrystalline-silicon-based few-electron memory devices in the light of electron storage, ejection, and lifetime characteristics

Souri Banerjee, Shaoyun Huang, S. Oda

DOI

2003

Single-electron-memory devices based on nanocrystalline silicon dots

Shaoyun Huang

2002

Evidence of Electron Trapping and Emission in Nanocrystalline-Si Based Memory Device

Souri Banerjee, Shaoyun Huang, S. Oda

2002

Evidence of storing and erasing of electrons in a nanocrystalline-Si based memory device at 77 K

Souri Banerjee, Shaoyun Huang, T. Yamanaka, S. Oda

DOI

2002

Temperature and Frequency Dependencies of Charging and Discharging Properties in Mos Memory Based on Nanocrystalline Silicon Dot

Shaoyun Huang, Souri Banerjee, S. Oda

DOI

2002

Observation of Quantum Confinement Effects in Nanocrystalline Silicon Dot Floating Gate Single Electron Memory Devices

Shaoyun Huang, Souri Banerjee, S. Oda

DOI

2001

A New Method to Measure the Drift Mobility in Doped Manganite Films

Li Wang, Kun-Ji Chen, Xin-Fan Huang, Jiang Yin, Shaoyun Huang, Jun Xu, Zhi-Guo Liu

DOI

2001

Structural and Electrical Properties of Ultra-Thin SiO_2 Films Fabricated wit h Plasma Oxidation Technique

Shaoyun Huang

2001

C-V and G-V Measurements Showing Single Electron Trapping in Nanocrystalline Silicon Dot Embedded in MOS Memory Structure

Shaoyun Huang, Souri Banerjee, S. Oda

DOI

2001

Very High Hydrogen Dilution Induced Novel Phenomena of Electronic Transport Properties in Hydrogenated Microcrystalline Silicon-Germanium Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Method

Shaoyun Huang, Kunji Chen, Jian-Jun Shi, Xin-Fan Huang, Jun Xu, G. Ganguly, A. Matsuda

DOI

2000

The change of transport mechanism in μc-Si:H films induced by H2-diluted silane plasma

Shaoyun Huang, Li Wang, G. Ganguly, Jun Xu, Xin-Fan Huang, A. Matsuda, Kunji Chen

DOI

1999

Thermally activated drift mobility and small polaron conduction in La 0.75 Sr 0.11 Ca 0.14 MnO 3 thin films investigated by the traveling wave method

Li Wang, Jiang Yin, Shaoyun Huang, Xinfan Hunag, Jun Xu, Zhi-Guo Liu, Kunji Chen

DOI

1999

Investigation of the Transport Mechanism in Doped La-Based Manganite Thin Films by Traveling Wave Method

Li Wang, Shaoyun Huang, Jiang Yin, Xing-Xu Huang, Jian-Bin Xu, Zhi-Guo Liu, K.-J. Chen

DOI

精选作品

期刊论文

Step-Necked Tunnel Constrictions in Si Nanowires Enable 40 K Quantum-Dot Single-Hole Transistors without High-Resolution Lithography

Thickness-driven emergence of a highly insulating bulk state in SnTe nanoplates

Thin SnTe Nanoplates with Low Carrier Density

Compact radio frequency module for gate-defined quantum dot qubits

The exchange interaction between neighboring quantum dots: physics and applications in quantum information processing

Tunable transport properties of dual-gated InAs/GaSb core/shell nanowires

Quantum transport quality of a processed undoped Ge/SiGe heterostructure

Multiple channel transport properties of topological surface states in SmB6 nanoribbons

Fabrication and characterization of InSb nanosheet/hBN/graphite heterostructure devices

Surface-bulk coupling in a Bi2Te3 nanoplate grown by van der Waals epitaxy.

A double quantum dot defined by top gates in a single crystalline InSb nanosheet

A highly tunable quadruple quantum dot in a narrow bandgap semiconductor InAs nanowire.

Anisotropic magnetoresistance as evidence of spin-momentum inter-locking in topological Kondo insulator SmB6 nanowires.

Charge detection of a quantum dot under different tunneling barrier symmetries and bias voltages.

Erratum: Measurements of anisotropic g-factors for electrons in InSb nanowire quantum dots (2021 Nanotechnology 32 020002)

A charge sensor integration to tunable double quantum dots on two neighboring InAs nanowires.

Detection of charge states of an InAs nanowire triple quantum dot with an integrated nanowire charge sensor

Strong and tunable spin–orbit interaction in a single crystalline InSb nanosheet

Measurements of anisotropic g-factors for electrons in InSb nanowire quantum dots

Universal conductance fluctuations and phase-coherent transport in a semiconductor Bi2O2Se nanoplate with strong spin-orbit interaction.

Gate tunable energy gap and negative magnetoresistance of InAs/GaSb core/shell nanowires

A Single‐Electron Transistor Made of a 3D Topological Insulator Nanoplate

Growth Mechanism of SmB6 Nanowires Synthesized by Chemical Vapor Deposition: Catalyst-Assisted and Catalyst-Free

Anisotropic Pauli Spin-Blockade Effect and Spin-Orbit Interaction Field in an InAs Nanowire Double Quantum Dot.

Dimension Engineering of High-Quality InAs Nanostructures on a Wafer Scale.

Applied Stress-Assisted Growth of Single Crystal γ-Fe2O3 Nanowires

Magnetotransport in antidot arrays of three-dimensional topological insulators

Mott variable-range hopping transport in a MoS2 nanoflake

Strong spin-orbit interaction and magnetotransport in semiconductor Bi2O2Se nanoplates.

Gate defined quantum dot realized in a single crystalline InSb nanosheet

Synthesis of Bi₂Te₃ Nanotubes Using Te Nanotubes as a Template.

Synthesis of Mn-doped indium antimonide nanowires by multi-step depositions and annealing

Coherent Transport in a Linear Triple Quantum Dot Made from a Pure-Phase InAs Nanowire.

High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se.

Epitaxial Growth of Ternary Topological Insulator Bi2 Te2 Se 2D Crystals on Mica.

Covalently bonded single-molecule junctions with stable and reversible photoswitched conductivity

Measurements of the spin-orbit interaction and Landé g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime

Schottky barrier heights at the interfaces between pure-phase InAs nanowires and metal contacts

Growth of High Material Quality Group III-Antimonide Semiconductor Nanowires by a Naturally Cooling Process

Weak antilocalization and electron-electron interaction in coupled multiple-channel transport in a Bi2Se3 thin film.

Conducting channel wholly-wrapped nanowire plane surrounding-gate field effect device and preparation method therefor

Patterning two-dimensional chalcogenide crystals of Bi2Se3 and In2Se3 and efficient photodetectors

Suspended InAsnanowire gate-all-around field-effect transistors

微纳器件热传导中的基础物理问题

Si and Ge nanowire based quantum dots for spin qubits

Enhanced anisotropic effective g factors of an Al0.25Ga0.75N/GaN heterostructure based quantum point contact.

Synthesis, properties, and top-gated metal–oxide–semiconductor field-effect transistors of p-type GaSb nanowires

Fundamental physics issues of thermal conduction in nanoscale devices

Top-gated germanium nanowire quantum dots in a few-electron regime

Temperature Evolution of Spin-Polarized Electron Tunneling in Silicon Nanowire–Permalloy Lateral Spin Valve System

A single-electron transistor and an even-odd effect in chemically synthesized Ge nanowires

Single-Electron Transport through Semiconducting Nanowires: A Comparison between Silicon and Germanium

Demonstration of spin valve effects in silicon nanowires

Top-gated single-electron transistor in germanium nanowires

Silicon Nanocrystal Flash Memory

Single-electron transport through a Germanium-Nanowire Quantum Dot

Classical Coulomb blockade of a silicon nanowire dot

An n-type silicon nanowire dot based single-electron transistor

Optical and electrical properties of Zn1-xCdxO films grown on Si substrates by reactive radio-frequency magnetron sputtering

Charge storage in nitrided nanocrystalline silicon dots

TRANSPORT PROPERTIES OF μc-Si:H FILMS PREPARED BY VERY HIGH HYDROGEN-DILUTED SILANE PLASMA

Charge operation of nitrided nanocrystalline silicon dot memory devices

Toward long-term retention-time single-electron-memory devices based on nitrided nanocrystalline silicon dots

Electron trapping, storing, and emission in nanocrystalline Si dots by capacitance–voltage and conductance–voltage measurements

Quantum confinement energy in nanocrystalline silicon dots from high-frequency conductance measurement

Operation of nanocrystalline-silicon-based few-electron memory devices in the light of electron storage, ejection, and lifetime characteristics

Single-electron-memory devices based on nanocrystalline silicon dots

Evidence of Electron Trapping and Emission in Nanocrystalline-Si Based Memory Device

Evidence of storing and erasing of electrons in a nanocrystalline-Si based memory device at 77 K

Temperature and Frequency Dependencies of Charging and Discharging Properties in Mos Memory Based on Nanocrystalline Silicon Dot

Observation of Quantum Confinement Effects in Nanocrystalline Silicon Dot Floating Gate Single Electron Memory Devices

A New Method to Measure the Drift Mobility in Doped Manganite Films

Structural and Electrical Properties of Ultra-Thin SiO_2 Films Fabricated wit h Plasma Oxidation Technique

C-V and G-V Measurements Showing Single Electron Trapping in Nanocrystalline Silicon Dot Embedded in MOS Memory Structure

Very High Hydrogen Dilution Induced Novel Phenomena of Electronic Transport Properties in Hydrogenated Microcrystalline Silicon-Germanium Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Method

The change of transport mechanism in μc-Si:H films induced by H2-diluted silane plasma

Thermally activated drift mobility and small polaron conduction in La 0.75 Sr 0.11 Ca 0.14 MnO 3 thin films investigated by the traveling wave method

Investigation of the Transport Mechanism in Doped La-Based Manganite Thin Films by Traveling Wave Method