高玉竹｜同济大学｜学者主页

期刊论文

2024

引信用非制冷快响应长波红外敏感技术

马明，徐博，高玉竹，陈遵田

《探测与控制学报》

2024

Structural and optical characteristics of InAs0.02Sb0.82N0.16 thick epilayers grown by melt epitaxy

Yuzhu Gao, Zuntian Chen, Yasuhiro Hayakawa

Advanced Fiber Laser Conference (AFL)

DOI

2022

Laser scanning confocal microscopy observations of InAsSb thin and thick epilayers

Yuzhu Gao, Xiuying Gong, Zuntian Chen, Minoru Niigaki, Tadanobu Koyama, Yasuhiro Hayakawa

Asia Pacific Conference on Optics Manufacture and International Forum of Young Scientists on Advanced Optical Manufacturing (APCOM and YSAOM)

DOI

2018

近室温工作的中长波InAsSb探测器

高玉竹，赵子瑞，龚秀英，魏小梅，冯彦斌，司俊杰

《光电子·激光》

2015

非制冷型InAsSb光探测器在8～9μm波长的性能提高

高玉竹，龚秀英，李继军，吴广会，冯彦斌，Takamitsu Makino，Hirofumi Kan

《光电子·激光》

2015

Uncooled InAs0.09Sb0.91 photoconductors with cutoff wave-length extended to 11.5 μm

Yuzhu Gao, Xiuying Gong, Ran Zhou, Ji-jun Li, Yan-bin Feng, Takamitsu Makino, Hirofumi Kan

Optoelectronics Letters

DOI

2014

退火处理对长波长InAsSb材料电学性能的影响

高玉竹，周冉，龚秀英，杜传兴

《材料热处理学报》

2014

非制冷型中长波铟砷锑探测器

高玉竹，洪伟，龚秀英，吴广会，冯彦斌

《电子与封装》

2013

InAsSb thick epilayers applied to long wavelength photoconductors

Yuzhu Gao, Xiuying Gong, Guang-hui Wu, Yan-bin Feng, Takamitsu Makino, Hirofumi Kan, Tadanobu Koyama, Yasuhiro Hayakawa

International Journal of Minerals Metallurgy and Materials

DOI

2012

长波InAsSb材料的结构特性研究

杜传兴，高玉竹，龚秀英，方维政

《电子与封装》

2012

用液相外延法生长3～7μm波段InAs/InAs1-ySby及其光学和电学性质

高玉竹，龚秀英，Makino T，Yamaguchi T，Rowell N L

《光电子·激光》

DOI

2011

Characteristics of n‐InAs/p‐InAsSb heterojunctions with a cutoff wavelength of 4.8 μm

Yuzhu Gao, Baiqiao Xu, Zhuowei Wang, Xiuying Gong, Weizheng Fang

Rare Metals

DOI

2010

室温InAsSb长波红外探测器的研制

高玉竹，龚秀英，吴广会，冯彦斌，方维政

《光电子·激光》

DOI

2009

截止波长12μm的p型-InAs0.04Sb0.96材料的熔体外延生长

高玉竹，王卓伟，龚秀英

《光子学报》

2009

Growth and characteristics of InAsSb epilayers with a cutoff wavelength of 4.8 μm prepared by one‐step liquid phase epitaxy

Yuzhu Gao, Xiuying Gong, Weizheng Fang, Akihiro Ishida

Rare Metals

DOI

2008

Spectroscopic ellipsometry of anodized layer on single crystal InAsSb layer grown by melt epitaxy

Kamil Postava, Yuzhu Gao, X. Y. Gong, L. Halagačka, Jaromı́r Pištora, A. Nakaoka, T. Yamaguchi

Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

DOI

2007

截止波长12μm的InAs0.04Sb0.96/GaAs的熔体外延生长及特性研究

高玉竹，龚秀英，陈涌海，吴俊

《光电子·激光》

2005

熔体外延法生长的截止波长12μm的InAs0.04Sb0.96的电学性质

高玉竹，龚秀英，梁骏吾，桂永胜，山口十六夫

《光电子·激光》

2005

Influence of Si3N4 and ZnS films on transmittance of InAsSb/InAsPSb heterostructures

Yuzhu Gao, X.Y. Gong, Weizheng Fang, Huiyong Deng, G. J. Hu, Michiru Aoyama, Tsuyoshi Yamaguchi, Ning Dai

Applied Surface Science

DOI

2004

用熔体外延法生长的截止波长10μm以上的InAsSb单晶

高玉竹，龚秀英，方维政，徐非凡，吴俊，戴宁

《红外与毫米波学报》

会议论文

2004

用一种新方法生长的截止波长10μm以上的InAsSb单晶

高玉竹，龚秀英，方维政，徐非凡，戴宁

《大珩先生九十华诞文集暨中国光学学会2004年学术大会论文集》

2004

3-5μm室温探测器用InAs/InAsSb和InAs/InAsPSb的液相外延生长

高玉竹，龚秀英，胡古今，邓会勇，方维政，戴宁

《大珩先生九十华诞文集暨中国光学学会2004年学术大会论文集》

高玉竹

精选作品

期刊论文

引信用非制冷快响应长波红外敏感技术

Structural and optical characteristics of InAs0.02Sb0.82N0.16 thick epilayers grown by melt epitaxy

Laser scanning confocal microscopy observations of InAsSb thin and thick epilayers

近室温工作的中长波InAsSb探测器

非制冷型InAsSb光探测器在8～9μm波长的性能提高

Uncooled InAs0.09Sb0.91 photoconductors with cutoff wave-length extended to 11.5 μm

退火处理对长波长InAsSb材料电学性能的影响

非制冷型中长波铟砷锑探测器

InAsSb thick epilayers applied to long wavelength photoconductors

长波InAsSb材料的结构特性研究

用液相外延法生长3～7μm波段InAs/InAs1-ySby及其光学和电学性质

Characteristics of n‐InAs/p‐InAsSb heterojunctions with a cutoff wavelength of 4.8 μm

室温InAsSb长波红外探测器的研制

截止波长12μm的p型-InAs0.04Sb0.96材料的熔体外延生长

Growth and characteristics of InAsSb epilayers with a cutoff wavelength of 4.8 μm prepared by one‐step liquid phase epitaxy

Spectroscopic ellipsometry of anodized layer on single crystal InAsSb layer grown by melt epitaxy

截止波长12μm的InAs0.04Sb0.96/GaAs的熔体外延生长及特性研究

熔体外延法生长的截止波长12μm的InAs0.04Sb0.96的电学性质

Influence of Si3N4 and ZnS films on transmittance of InAsSb/InAsPSb heterostructures

用熔体外延法生长的截止波长10μm以上的InAsSb单晶

会议论文

用一种新方法生长的截止波长10μm以上的InAsSb单晶

3-5μm室温探测器用InAs/InAsSb和InAs/InAsPSb的液相外延生长

研究方向