杨伟锋｜厦门大学｜学者主页

2026

Competing self-trapped hole release and deep-level defect recombination in Ga2O3 photodetectors

Shuaihang Xu, Qingxuan Sun, Jiahao Liao, Changjie Zhou, Huili Zhu, Cunzhi Sun, Weifeng Yang

Applied Physics Letters

DOI

2026

High-performance large-area β-Ga2O3 MIS trench Schottky barrier diodes with Al2O3/GaON interfacial insulators

Zifan Hong, Shubo Wei, Jialong Lin, Yu Huang, Mingkun Zhang, Feng Zhang, Weifeng Yang

Applied Physics Letters

DOI

2026

2.7-kV CuCrO2/Ga2O3 heterojunction diode with stepped-mesa termination and on-state electrical stress reliability

Ying Li, Ze Hui Yang, Xingkun Peng, Yirong Fu, Jialong Lin, Liangxun Yue, Feng Zhang, Weifeng Yang

Applied Physics Letters

DOI

2026

Interfacial rare-earth oxide-enabled X-ray-tolerant Ga2O3 MIS Schottky barrier diodes with significant reverse leakage current suppression

Ying Li, Yirong Fu, Hongru Zhan, Aihang Deng, Mingtao Long, Yue Wang, Y. H. Wu, Weifeng Yang

Materials Today Physics

DOI

2026

Facilitating flat-band voltage shifts of 4H-SiC MOS capacitors by HfO2/SiO2 laminated stacks with multiple interfacial dipole layers

Xinwei Wang, Zhonglin Sun, Shijun Lin, Hongxiang Bi, Ze Yang, Shuaibo Zhou, Weifeng Yang

Journal of Alloys and Compounds

DOI

2026

Low-leakage and high on/off current ratio vertical β-Ga2O3 Schottky barrier diodes induced by interface nitrogen doping

Mingtao Long, Zhonglin Sun, Jialong Lin, Zifan Hong, Shubo Wei, Yu Huang, Feng Zhang, Weifeng Yang

Journal of Alloys and Compounds

DOI

2026

Synergistic work function modulation and interface traps suppression in CuCrO2/β-Ga2O3 p-n heterojunction diodes through oxygen vacancy passivation

Ying Li, Yingzhen Lin, Ze Yang, Ze Yang, Jialong Lin, Yujian Chen, Feng Zhang, Weifeng Yang

Journal of Alloys and Compounds

DOI

2026

Normally-off β -AlGaO/Ga 2 O 3 modulation-doped field-effect transistors with GaN P-N junction gate: proposal and investigation

Yifeng Wang, Yingzhen Lin, Mingtao Long, Weifeng Yang

Physica Scripta

DOI

2026

Light-Induced Depletion-Region Modulation in a PtTe 2 /Ga 2 O 3 Schottky Junction Field-Effect Transistor for Solar-Blind UV Detection

Ze Hui Yang, Xingkun Peng, Ying Li, Shuaibo Zhou, Xinwei Wang, Qijin Cheng, Weifeng Yang

ACS Nano

DOI

2025

High-Speed and Responsivity 4H–SiC MISIM Ultraviolet Photodetector With Si x N 1– x Interlayer by Atomic Nitrogen Treatment

Xingwei Wang, Hongxiang Bi, Shuaibo Zhou, Xiyao He, Ze Hui Yang, Ying Li, Xingkun Peng, Hao Long, Weifeng Yang

IEEE Sensors Journal

DOI

2025

Performance and Stability Improvements in β-Ga 2 O 3 MOSFET With Thin HfAlO Gate Dielectric by O 2 Plasma Treatment

Chengyi Tian, Ying Li, Chuanlun Zhang, Shubo Wei, Cheng Chao Li, Hongru Zhan, Qingxuan Sun, Hongxiang Bi, Weifeng Yang

IEEE Transactions on Electron Devices

DOI

2025

Self-Powered Nano Pt/Amorphous Ga₂O₃/Crystalline CuCrO₂ Heterostructure Solar-Blind Photodetector With High Responsivity and Detectivity

Jialong Lin, Ying Li, Xiyao He, Xingkun Peng, Hongxiang Bi, Hao Long, Weifeng Yang

IEEE Electron Device Letters

DOI

2025

First Demonstration of CuCrO 2 /β-Ga 2 O 3 p-n Heterojunction Diode With High Breakdown Voltage and Low Leakage Current

Ying Li, Jialong Lin, Chengyi Tian, Xinwei Wang, Shubo Wei, Guoliang Zhang, Feng Zhang, Weifeng Yang

IEEE Transactions on Electron Devices

DOI

2025

Modulating Oxygen Vacancies in β-Ga2O3 Microflake for High-Responsivity Solar-Blind Photodetectors

Xingkun Peng, Ze Yang, Shubo Wei, Xiyao He, Hao Long, Weifeng Yang

IEEE Sensors Journal

DOI

2025

Increase fixed charge at Al2O3/Ga2O3 interface for high-performance Ga2O3 trench Schottky barrier diodes by atomic nitrogen treatment

Shubo Wei, Zifan Hong, Chengchao Li, Mingtao Long, Ying Li, Y. B. Chen, Feng Zhang, Weifeng Yang

Applied Physics Letters

DOI

2024

Plasmon-Enhanced Performance in Self-Powered Solar-Blind CuCrO2/β-Ga2O3 Heterojunction Photodetectors With Al Nanoparticles

Jialong Lin, Ying Li, Xiyao He, Xingkun Peng, Shubo Wei, Zuhui Chen, Hao Long, Weifeng Yang

IEEE Sensors Journal

DOI

2024

A trench beside field limiting rings terminal for improved 4H-SiC junction barrier Schottky diodes: Proposal and investigation

Xiaofeng Ye, Huihuang Ke, Shubo Wei, Hongjin Weng, Xinwei Wang, Shen Yuong Wong, Weifeng Yang

Microelectronics Reliability

DOI

2024

Improved β-Ga2O3 Schottky Barrier Diodes via thermal oxidation of titanium insertion layer

Shutao Chen, Song Du, Kaikai Wang, Liang Qiao, Chuanlun Zhang, Weifeng Yang, Qiang Li, Zhi-Wei Zheng, Yang Mei, Hao Long

Micro and Nanostructures

DOI

2024

High-Performance β -Ga₂O₃ MISIM Solar-Blind Photodetectors With an Interfacial AlN Layer

Chuanlun Zhang, Chengyi Tian, Shubo Wei, Ziling Cai, Hao Long, Jie Zhang, Rongdun Hong, Weifeng Yang

IEEE Photonics Technology Letters

DOI

2024

High-Responsivity Self-Powered Solar-Blind Photodetectors Based on Magnetron-Sputtered CuCrO₂/ β -Ga₂O₃ p-n Heterojunction

Jialong Lin, Zifan Hong, Mingtao Long, Shubo Wei, Xingkun Peng, Xiyao He, Hao Long, Jie Zhang, Weifeng Yang

IEEE Transactions on Electron Devices

DOI

2024

High-Performance 8 × 8 4H-SiC-Based MISIM Photodetector Arrays for UV Imaging

Huihuang Ke, Xiaofeng Ye, Xinwei Wang, Youcheng Sun, Rongdun Hong, Weifeng Yang

IEEE Photonics Technology Letters

DOI

2024

Self-Aligned Ionic Doping of TiO2 Thin-Film Transistors for Enhanced Current Drivability via Postfabrication Superacid Treatment

Jie Zhang, Haochen Zhao, Xiaofeng Ye, Meng Jia, Guangyang Lin, Ze Yang, Yifeng Wang, Shubo Wei, Yingzhen Lin, Qingxuan Sun, Tuofu Zhama, Weifeng Yang, Yuping Zeng

ACS Applied Materials & Interfaces

DOI

2024

Gallium-incorporated TiO2 thin films by atomic layer deposition for future electronic devices

Qingxuan Sun, Yingzhen Lin, Chaoya Han, Ze Hong Yang, Ying Li, Yuping Zeng, Weifeng Yang, Jie Zhang

Frontiers in Materials

DOI

2024

Effect of Oxygen Precursors on Growth Mechanism in High-Quality β-Ga₂O₃ Epilayers on Sapphire by Molecular Beam Epitaxy and Related Solar-Blind Photodetectors

Chengyi Tian, Chuanlun Zhang, Jialong Lin, Jie Zhang, Weifeng Yang

IEEE Sensors Journal

DOI

2022

通过镓离子束辐照调控单层MoS2晶体管的阈值电压（英文）

唐保山，赵云山，周昌杰，张明昆，朱会丽，李毅达，梁锦锋，帅浩，龚浩，杨伟锋

Science China Materials

2019

Determination of band alignments at 2D tungsten disulfide/high-k dielectric oxides interfaces by x-ray photoelectron spectroscopy

Changjie Zhou, Huili Zhu, Shaobin Pan, Tongchang Zheng, Xiaojing Huang, Qiubao Lin, Weifeng Yang

Applied Surface Science

DOI

2014

High-performance 4H-SiC-based p-i-n ultraviolet photodiode and investigation of its capacitance characteristics

Jiafa Cai, Xiaping Chen, Rongdun Hong, Weifeng Yang, Zhengyun Wu

Optics Communications

DOI

2012

Improvement of GaN light-emitting diodes with surface-treated Al-doped ZnO transparent Ohmic contacts by holographic photonic crystal

Weifeng Yang, Z. G. Liu, Yannan Xie, Jiafa Cai, S. Liu, Hao Gong, Zhao Wu

Applied Physics A

DOI

2010

Metal–Semiconductor–Metal Ultraviolet Photodetectors Based on $\hbox{TiO}_{2}$ Films Deposited by Radio-Frequency Magnetron Sputtering

Huolin Huang, Weifeng Yang, Yannan Xie, Xiaping Chen, Zhengyun Wu

IEEE Electron Device Letters

DOI

2008

一维阵列MSM 4H-SiC紫外光电探测器的研制

杨伟锋，蔡加法，张峰，刘著光，吕英，吴正云

Journal of Semiconductors

2008

RF磁控溅射制备AZO透明导电薄膜及其性能(英文)

杨伟锋，刘著光，张峰，黄火林，吴正云

Journal of Semiconductors

2008

铝掺杂氧化锌透明薄膜之制备及其在氮化镓基发光二极管之应用

杨伟锋

《厦门大学》

2008

High-performance 4H-SiC based metal-semiconductor-metal ultraviolet photodetectors with Al2O3∕SiO2 films

Feng Zhang, Weifeng Yang, Huolin Huang, Xiaping Chen, Zhengyun Wu, Huili Zhu, Hongji Qi, Jianke Yao, Zhengxiu Fan, Jianda Shao

Applied Physics Letters

DOI

2007

不同工作压强下ICP刻蚀对SiC表面损伤的研究

吕英，庞爱锁，杨伟锋，陈厦平，朱会丽，吴正云

《福州大学学报(自然科学版)》

2005

不同退火温度下金属/4H—SiC Schottky势垒高度的研究

杨克勤，陈厦平，杨伟锋，孔令民，蔡加法，林雪娇，吴正云

《量子电子学报》

精选作品

期刊论文

Competing self-trapped hole release and deep-level defect recombination in Ga2O3 photodetectors

High-performance large-area β-Ga2O3 MIS trench Schottky barrier diodes with Al2O3/GaON interfacial insulators

2.7-kV CuCrO2/Ga2O3 heterojunction diode with stepped-mesa termination and on-state electrical stress reliability

Interfacial rare-earth oxide-enabled X-ray-tolerant Ga2O3 MIS Schottky barrier diodes with significant reverse leakage current suppression

Facilitating flat-band voltage shifts of 4H-SiC MOS capacitors by HfO2/SiO2 laminated stacks with multiple interfacial dipole layers

Low-leakage and high on/off current ratio vertical β-Ga2O3 Schottky barrier diodes induced by interface nitrogen doping

Synergistic work function modulation and interface traps suppression in CuCrO2/β-Ga2O3 p-n heterojunction diodes through oxygen vacancy passivation

Normally-off β -AlGaO/Ga 2 O 3 modulation-doped field-effect transistors with GaN P-N junction gate: proposal and investigation

Light-Induced Depletion-Region Modulation in a PtTe 2 /Ga 2 O 3 Schottky Junction Field-Effect Transistor for Solar-Blind UV Detection

High-Speed and Responsivity 4H–SiC MISIM Ultraviolet Photodetector With Si x N 1– x Interlayer by Atomic Nitrogen Treatment

Performance and Stability Improvements in β-Ga 2 O 3 MOSFET With Thin HfAlO Gate Dielectric by O 2 Plasma Treatment

Self-Powered Nano Pt/Amorphous Ga₂O₃/Crystalline CuCrO₂ Heterostructure Solar-Blind Photodetector With High Responsivity and Detectivity

First Demonstration of CuCrO 2 /β-Ga 2 O 3 p-n Heterojunction Diode With High Breakdown Voltage and Low Leakage Current

Modulating Oxygen Vacancies in β-Ga2O3 Microflake for High-Responsivity Solar-Blind Photodetectors

Increase fixed charge at Al2O3/Ga2O3 interface for high-performance Ga2O3 trench Schottky barrier diodes by atomic nitrogen treatment

Plasmon-Enhanced Performance in Self-Powered Solar-Blind CuCrO2/β-Ga2O3 Heterojunction Photodetectors With Al Nanoparticles

A trench beside field limiting rings terminal for improved 4H-SiC junction barrier Schottky diodes: Proposal and investigation

Improved β-Ga2O3 Schottky Barrier Diodes via thermal oxidation of titanium insertion layer

High-Performance β -Ga₂O₃ MISIM Solar-Blind Photodetectors With an Interfacial AlN Layer

High-Responsivity Self-Powered Solar-Blind Photodetectors Based on Magnetron-Sputtered CuCrO₂/ β -Ga₂O₃ p-n Heterojunction

High-Performance 8 × 8 4H-SiC-Based MISIM Photodetector Arrays for UV Imaging

Self-Aligned Ionic Doping of TiO2 Thin-Film Transistors for Enhanced Current Drivability via Postfabrication Superacid Treatment

Gallium-incorporated TiO2 thin films by atomic layer deposition for future electronic devices

Effect of Oxygen Precursors on Growth Mechanism in High-Quality β-Ga₂O₃ Epilayers on Sapphire by Molecular Beam Epitaxy and Related Solar-Blind Photodetectors

通过镓离子束辐照调控单层MoS2晶体管的阈值电压（英文）

Determination of band alignments at 2D tungsten disulfide/high-k dielectric oxides interfaces by x-ray photoelectron spectroscopy

High-performance 4H-SiC-based p-i-n ultraviolet photodiode and investigation of its capacitance characteristics

Improvement of GaN light-emitting diodes with surface-treated Al-doped ZnO transparent Ohmic contacts by holographic photonic crystal

Metal–Semiconductor–Metal Ultraviolet Photodetectors Based on $\hbox{TiO}_{2}$ Films Deposited by Radio-Frequency Magnetron Sputtering

一维阵列MSM 4H-SiC紫外光电探测器的研制

RF磁控溅射制备AZO透明导电薄膜及其性能(英文)

铝掺杂氧化锌透明薄膜之制备及其在氮化镓基发光二极管之应用

High-performance 4H-SiC based metal-semiconductor-metal ultraviolet photodetectors with Al2O3∕SiO2 films

不同工作压强下ICP刻蚀对SiC表面损伤的研究

不同退火温度下金属/4H—SiC Schottky势垒高度的研究

预印本

Phase-Transformation-Associated Defects Boost the Performance of κ/β-Ga2O3 Solar Blind Photodetectors

研究方向