郝跃

期刊论文

1. Xuejing Sun, Shenglei Zhao, Longyang Yu, Longyang Yu, Juan Gui, Ga Zhang, Song Lin Yang, Shuzhen You, Song Lin Yang, Huantao Duan, Bin Hu, Huantao Duan, Jin Rao, Zhen Chen, Yue Hao, Jincheng Zhang (2026). Investigation of a gate-series-diode structure for improving Schottky-type p-GaN gate reliability. Journal of Semiconductors.DOI
2. 张博文，雷毅敏，祝杰杰，王巍巍，魏宇翔，秦灵洁，张明辰，徐佳响，王宏，马晓华，郝跃 (2026). A novel stack-HfO2top-gate structure for improving performance of network carbon nanotube transistor. Chinese Physics B.
3. 游志鹏，任泽阳，张金风，郝跃，张进成（2026）. 金刚石n型掺杂研究进展与展望. 《人工晶体学报》.DOI
4. 肖飞，檀东昕，罗拯东，张大为，甘雪涛，储著飞，薛飞，夏银水，刘艳，郝跃，韩根全（2026）. CMOS兼容的二维半导体-氮化物铁电光电忆阻晶体管:面向神经形态感知计算与光学解码（英文）. Science Bulletin.
5. 李俊鹏，任泽阳，张金风，陈军飞，张涛，苏凯，付裕，朱卫东，李静轩，张进成，郝跃（2026）. 单晶金刚石介电特性. 《物理学报》.
6. 万紫嫣，张浩然，李霄，宁静，郝跃，张进成（2026）. GaN高电子迁移率晶体管界面工程对高温与动态偏压可靠性提升的作用机制. 《物理学报》.
7. 任威宇，常志杰，吕滔，侯斌，武玫，张濛，芦浩，杨凌，马晓华，郝跃（2026）. 高频高功率氮化镓射频电子器件研究发展综述. 《物理学报》.
8. Zhang Wen, Ming-Chao Yang, Song-Quan Yang, Ming Li, Yi Yang, Bang-Yao Mao, Wei-Zhe Bi, Chuan-Yu Han, Weihua Liu, Li Geng, Yue Hao (2026). Elucidating oxygen vacancy passivation mechanism at Al2O3/ β -Ga2O3 interface via supercritical N2O processing. Applied Physics Letters.DOI
9. Haifeng Chen, Chun-Ling Chen, Zhi-Hong Wei, Yi-Fan Jia, Xiang-Tai Liu, Yue Hao (2026). Synthesis of large β-Ga2O3 single-crystal nanobelt. Applied Physics Letters.DOI
10. Tong-Long Zeng, Wan-Lin Zhang, Rui Wang, Xinru Yang, Xiaotao Jing, Pei-Lin Zhang, Chen Yan, Xiao-Hua Ma, Qi Li, Bo-Wen Zhu, Hong Wang, Yue Hao (2026). Ternary In‐Sensor Encryption Based on One‐Phototransistor‐One‐Threshold Switching Devices. Advanced Optical Materials.DOI
11. Yu Fu, Ze Peng, Jin-Feng Zhang, Ze-Yang Ren, Kai Su, H. Kawarada, Yue Hao, Jin-Cheng Zhang (2026). Emerging oxidized silicon-terminated (C-Si-O) diamond field-effect transistors toward industrial applications. Functional Diamond.DOI
12. Cheng-Yang Yu, Shui Xiang, Ya-Hui Zhang, Tao Zou, Yue Hao (2026). A Photonic Real‐Valued Weights Spiking Neural Networks Based on the Intrinsic Plasticity for Neuromorphic Datasets. Laser & Photonics Reviews.DOI
13. Wancai Liu, Xue Shen, Jiazhou Guo, Wenxuan Ma, Yisen Luo, Yue Hao, Jing Ning, Jin-Cheng Zhang (2026). Asymmetric WSe2 reconfigurable devices for logic-in-memory computing: contact barrier engineering and floating gate-controlled operation. Science China Information Sciences.DOI
14. Chen Yan, Zi-Chen Zuo, Ze-Da Wang, Rui Wang, Guo-Lei Liu, Tong-Long Zeng, Yang-Rui Li, Pei-Lin Zhang, Bo-Hao Li, Xiao-Hua Ma, Bo-Wen Zhu, Hong Wang, Yue Hao (2026). Event-triggered visual neuron based on memristor for privacy-preserving and efficient neuromorphic sensing. Science China Information Sciences.DOI
15. Hao-Nan Li, Lei Wang, Jiang Zhu, Yi-Xing He, Xian-Qin Liu, Yue-Qi Wang, Siwen Zhang, Jia-Yu Wang, Shupeng Zhao, Yong Zhou, H. Ma, Yue Hao, Jin-Cheng Zhang (2026). Varistructure resistive switching memory devices through dynamical redox of oxides. Applied Physics Letters.DOI
16. Xuan Huang, Lin-An Yang, Yi-Tong Yang, Peng Liu, Dong-Liang Chen, Zeyu Yang, Xiao-Hua Ma, Yue Hao (2026). 1 kV/2.7 MV/cm GaN quasi-vertical Schottky barrier diode with self-aligned mesa-field plate composite termination. Applied Physics Letters.DOI
17. Yichong Ding, Jiejie Zhu, Zi-Yue Zhao, Chu-Peng Yi, Zeng Li, Meng-Di Li, Ling-Jie Qin, Yuxi Zhou, Shuo Wang, Yu-Chen Qian, Wanshuo Liao, Yiwei Wang, Xiao-Hua Ma, Yue Hao (2026). Investigation on the mechanism of stability variation with gate–drain bias in AlGaN/GaN-on-Si HEMTs. Applied Physics Letters.DOI
18. Haolun Sun, Mei Wu, Shimin Li, Yuan Li, Chao Yuan, Yuanmeng Xiang, Xu Zou, Meng Zhang, Hao Lu, Bin Hou, Ling Yang, Xiao-Hua Ma, Yue Hao (2026). MD-modified DMM analysis of thermal boundary resistance in diamond/GaN heterostructures. Applied Physics Letters.DOI
19. Yu-Heng Liu, Tao Zhang, Hua-Ke Su, Jiahao Chen, Xiangdong Li, Sheng-Rui Xu, Ze-Yang Ren, Weidong Zhu, Yu Du, Yue Hao, Jin-Cheng Zhang (2026). VTH-Adjustable p-Channel GaN Field-Effect Transistor with an Inserted n-GaN Layer. Micromachines.DOI
20. Gaopeng Huang, Jiejie Zhu, Yuan-Yuan Zhou, Yue Peng, Shou-Chen Yang, Yu-Xi Zhou, Ling-Jie Qin, Meng-Di Li, Xiao-Hua Ma, Yue Hao (2026). Hf _0.5 Zr _0.5 O ₂ -based ferroelectric gate AlN/GaN HEMTs with 2.5×10 ⁹ on/off ratio and 1324 mA. Chinese Physics B.DOI
21. Wen-Jun Liu, Ya-Chao Zhang, Zhi-Zhe Wang, Kai Su, Sheng-Lei Zhao, Sheng-Rui Xu, Jin-Feng Zhang, Yi-Xin Yao, Baiqi Wang, Yaolong Dong, Yue Hao, Jin-Cheng Zhang (2026). Investigation of AlN back barrier/GaN HEMTs with ultra-thin GaN channel for high-frequency and high-voltage applications. Applied Physics Letters.DOI
22. Fei-Yang Chen, Min-Han Mi, Peng-Fei Wang, Xiang-Xin Cao, Xiang Du, Jing-Yun Yao, Maoteng Lu, Dong-Xu Xiao, Lin-An Yang, Xiao-Hua Ma, Yue Hao (2026). High-performance Ka-band AlN-buffer GaN HEMTs with enhanced dynamic and breakdown characteristics achieving 10.05 W/mm P sat and 53.05% PAE. Applied Physics Letters.DOI
23. Zehui Li, Jun-Shuai Xue, GuanLin Wu, Yao Li, JiaJia Yao, JinYuan Yuan, Haoran Hu, Lin-Jie Yang, Yu-Ying Zhang, Chenkai Zhang, Xinyan Liu, Yu-Min Zhang, Jian-Feng Wang, Ke Xu, Jin-Cheng Zhang, Yue Hao (2026). Record low sheet resistance in homoepitaxial N-polar AlN/GaN heterostructures using digital-alloy barrier by plasma-assisted molecular beam epitaxy. Applied Physics Letters.DOI
24. JiaJia Yao, Jun-Shuai Xue, GuanLin Wu, Cheng Zhao, Zehui Li, JinYuan Yuan, Yu-Ying Zhang, Chenkai Zhang, Haoran Hu, Xinpeng Wang, Yi Tong, Jin-Cheng Zhang, Yue Hao (2026). Ultrathin fully strained GaN channel high electron mobility transistors on AlN-on-sapphire templates engineered by ferroelectric ScAlN epilayers. Applied Physics Letters.DOI
25. Xu Zou, Meng Zhang, Ling Yang, Yutong Jiang, Qian Yu, Weiyu Ren, Mei Wu, Bin Hou, Hao Lu, Mao Jia, Xiaohua Ma, Yue Hao (2026). Design of DC gate electric field redistribution under high drain voltage for high linearity, wide gain control range, and low C off in GaN dual-mode integrated devices. Applied Physics Letters.DOI
26. Yutong Fan, Weihang Zhang, Xin Qun Feng, Yinhe Wu, Lili Gao, Zhihong Liu, Yue Hao, Jincheng Zhang (2026). Stability and degradation of Si–GaN monolithic heterogeneous integration platform based on p-GaN gate GaN HEMTs. Applied Physics Letters.DOI
27. Zhihua Cai, Hao Zhang, Bin Wang, Minjie Zhang, Danmei Lin, Jian Xiang, Xiaoqiang Wang, Xuefeng Zheng, Yue Hao (2026). Study on the characteristics of trap states introduced by pulsed laser irradiation in GaN RF HEMT under off-state stress. Micro and Nanostructures.DOI
28. Xu Zou, Meng Zhang, Ling Yang, Yutong Jiang, Qian Yu, Shiming Li, Haolun Sun, Weiyu Ren, Mei Wu, Bin Hou, Hao Lu, Xiaohua Ma, Yue Hao (2026). A Compact GaN HEMT Using Active Region Coupling Design With Record 38 fs R on C off for SPST RF Switches. IEEE Microwave and Wireless Technology Letters.DOI
29. Ying Zhou, Yunlong He, Jing Sun, Xiaoli Lu, Zhan Wang, Yang Liu, Jinwei Liu, Ke Qin, Zhuowen Huang, Jiwei Jiang, Zhu Jin, Hui Zhang, Xuefeng Zheng, Xiaohua Ma, Yue Hao (2026). Carrier gas modulated surface dynamics and crystalline quality of (100) β-Ga2O3 homoepitaxial films via MOCVD. Applied Surface Science.DOI
30. Xu Zou, Meng Zhang, Ling Yang, Yutong Jiang, Qian Yu, Chunzhou Shi, Shiming Li, Wenze Gao, Qingyuan Chang, Weiyu Ren, Haolun Sun, Bin Hou, Mei Wu, Hao Lu, Xiaohua Ma, Yue Hao (2026). Modulation of Fe doping tail for high CW power handling and OIP3 in HEMT-based RF switches compatible with PA co-integration. Applied Physics Letters.DOI
31. Yuanchen Ma, Peng Qian, Yu Fu, Jinfeng Zhang, Kai Su, Zeyang Ren, Huilong Yan, Li Fan, Rui Guo, Yue Hao, Jincheng Zhang (2026). Impact of Step-Bunching Morphology on High-Voltage Single-Crystal Diamond MOSFETs. IEEE Transactions on Electron Devices.DOI
32. Rujun Sun, Yifan Li, Jinghui Zhang, Hong Yu Zhou, Yue Hao, Jincheng Zhang (2026). Growth Temperature-Modulated Defects in Ga 2 O 3 Photoconductors by Heteroepitaxy. IEEE Transactions on Electron Devices.DOI
33. Yu-Chen Wang, Chupeng Yi, Ziyue Zhao, Xin Liu, Yanhua Xue, Ting Feng, Yang Lu, Ping Chen, Xiaohua Ma, Yue Hao (2026). A W-Band Power Amplifier With Vector-Sum Equalizer Technique Achieving 43% Fractional Bandwidth. IEEE Transactions on Microwave Theory and Techniques.DOI
34. Hu Wei, Gaofeng Dong, Jiaqi He, Zhaofeng Wang, Mei Xu, Zhengyuan Li, Hanghai Du, Weichuan Xing, Zhihong Liu, Yue Hao, Jincheng Zhang (2026). 100 nm Gate-Length N-Polar GaN/AlGaN Metal-Oxide-Semiconductor High Electron Mobility Transistor on a Si Substrate via Thin-Layer Transfer Technique. Nanotechnology.DOI
35. Wenju Shao, Zhanfei Han, Xiangdong Li, Cheng Li, Long Chen, Yue Hao, Jincheng Zhang (2026). Impact of Mg Doping on p-GaN Gate HEMTs Fabricated by CMOS-Compatible Process. IEEE Transactions on Electron Devices.DOI
36. Shihao Xu, Cui Yang, Wei Mao, Chao Liu, Ming Du, Ming Xiao, Yuanyuan Xie, Yu DUAN, Yuchuan Ma, Changfa Sun, Dongguo Fan, Guoliang Peng, Kai Cheng, Maojun Wang, Li Zheng, Zhihong Liu, Jincheng Zhang, Yue Hao (2026). 2.3-kV Vertical GaN Trench MOSFET With Variable Lateral Ion-Implanted Guard Rings. IEEE Electron Device Letters.DOI
37. Yilong Lei, Ting Zhou, Lili Zhai, Zhibo Cheng, Haonan Jiang, Qingping Xiao, Yi Wang, Liang Wang, Shenglei Zhao, Xi Jiang, Zhihong Liu, Jincheng Zhang, Yue Hao, Shuzhen You (2026). Enhancing Gate Reliability of p-GaN Gate HEMTs by Segmented-Gate Contact Structures. IEEE Transactions on Electron Devices.DOI
38. Longbing Yi, Xuefeng Zheng, Wen Peng Hong, Yuan Liu, Chao Zhang, Shunyu Wang, Danmei Lin, Rui Han, Yingzhe Wang, Kang Li, Xiaohua Ma, Yue Hao (2026). Integration of Microjet-Tesla Microchannels for Thermal Management of GaN-on-SiC HEMTs. IEEE Transactions on Electron Devices.DOI
39. Yuanyuan Xie, Cui Yang, Wei Mao, Guoliang Peng, Dongguo Fan, Maojun Wang, Yuchuan Ma, Changfa Sun, Chao Liu, Li Zheng, Yachao Zhang, Chunfu Zhang, Jincheng Zhang, Yue Hao (2026). 1.7kV fully-vertical GaN trench MOSFET with nitrogen ion-implanted guard rings. Nanotechnology.DOI
40. Linhuan Gao, Xiufeng Song, Longyang Yu, Ga Zhang, Xuejing Sun, Junchun Bai, Bin Cheng, Ming Xiao, Shuzhen You, Shenglei Zhao, Yue Hao, Jincheng Zhang (2026). Investigation of High-Temperature Characteristics of GaN p-Channel Field-Effect Transistors at 200 °C. IEEE Transactions on Electron Devices.DOI
41. Shihao Xu, Cui Yang, Wei Mao, Zhihong Liu, Jiaxiang Chen, Yu DUAN, Zhengda He, Bowen Tang, Guoliang Peng, Chong Wang, Xuefeng Zheng, Jincheng Zhang, Yue Hao (2026). High performance vertical GaN TMBS rectifier with Al 2 O 3 /SiO 2 dielectric layer. Physica Scripta.DOI
42. Xiangxin Cao, Pengfei Wang, Minhan Mi, Xinyu Liu, Dongxu Xiao, Xiang Du, Maoteng Lu, F N Chen, Zhentong Huang, Jingyun Yao, Yinyin Liang, Kehui Cui, X Y Ma, Yue Hao (2026). High-Efficiency Sub-100 nm Gate GaN HEMTs Enabled by Two-Step SiNx Layer Etching Technique. Micromachines.DOI
43. Danmei Lin, Xuefeng Zheng, Shaozhong Yue, Longbing Yi, Xiaohu Wang, Hao Zhang, Kai Liu, Mao Jia, Yingzhe Wang, Ling Lv, Yanrong Cao, Weidong Zhang, Peipei Hu, Jie Liu, Xiaohua Ma, Yue Hao (2026). Investigation on the Cumulative Degradation in p-GaN Gate HEMTs Under Synergistic Electrical Stress and Heavy Ion Irradiation. IEEE Transactions on Electron Devices.DOI
44. Yifan Chen, Jiejie Zhu, Mengdi Li, Yichong Ding, Lingjie Qin, Wei Zhao, Yuchen Qian, Yiwei Wang, Wanshuo Liao, Ziyue Zhao, Mei Yang, Yunlong He, Qing Zhu, Yue Hao, Xiaohua Ma (2026). Modulation of Carbon-Doped Buffer on the DC and Small-Signal Characteristics of AlGaN/GaN HEMTs on Si. IEEE Transactions on Electron Devices.DOI
45. Xuejing Sun, Shenglei Zhao, Xiufeng Song, Kunshu Wang, Lin Du, Zebin Kong, Longyang Yu, Shengrui Xu, Ga Zhang, Zhongxu Wang, Yachao Zhang, Shuzhen You, Yue Hao, Jincheng Zhang (2026). Investigation on Switching Characteristic Degradation and Single-Event Burnout Mechanism Caused by Ta Heavy Ions in p-GaN Gate HEMTs. IEEE Transactions on Electron Devices.DOI
46. Xuejing Sun, Xiufeng Song, Longyang Yu, Linhuan Gao, Junchun Bai, Bin Cheng, Juan Gui, Ga Zhang, Shengrui Xu, Yinhe Wu, Shuzhen You, Yachao Zhang, Ming Xiao, Shenglei Zhao, Yue Hao, Jincheng Zhang (2026). Enhanced High-Temperature Performance of In-Situ SiN GaN MIS-HEMTs With an AlN Back Barrier Up to 500 °C. IEEE Transactions on Electron Devices.DOI
47. Kuo Zhang, Yunlong He, C S Wang, Kai Liu, Jiahui Ren, Yi Luo, Y N Wu, Wentao Zhang, Xuefeng Zheng, Xiaohua Ma, Yue Hao (2026). Variable Gradient Mg-Doped p-GaN/AlGaN/GaN HEMT With Low Gate Leakage Current. IEEE Transactions on Electron Devices.DOI
48. Hongchang Tao, Huorong Wang, Shengrui Xu, Huake Su, Tao Zhang, X S Liu, Jincheng Zhang, Yue Hao (2026). Pre-growth interface engineering of sputtered AlN by Al-ion implantation for low-dislocation GaN epitaxy on flat sapphire. Materials Letters.DOI
49. Kun Zhang, Hong Yu Zhou, Qifeng LYU, Naiqian Zhang, C H Zhang, Jianfei Liu, Yixu Yao, Chenlu Wang, Min Zhou, Zhihong Liu, Sen Huang, Yi Pei, Yue Hao, Jincheng Zhang (2026). AlN Buffered K/Ku Bands GaN RF Power HEMTs with in-Situ SiN Silicidation Enabled Low $R_{C}=0.03 \Omega \cdot \text{mm}$ at 500 K and Record High $P_{\text{out}}=25 \mathrm{W}/\text{mm}$.DOI
50. Haobin Wei, Longyang Yu, Kangqi Li, Qiao Du, Xuejing Sun, Wenbao Han, Wei Mu, Ming Xiao, Shuzhen You, Shenglei Zhao, Yue Hao, Jincheng Zhang (2026). A Hybrid-Package 3-D GaN Power Module With Optimal Thermal Performance and High-Density Integration. IEEE Transactions on Power Electronics.DOI
51. Shihao Xu, Cui Yang, Wei Mao, Zhihong Liu, Yu DUAN, Zhengda He, Bowen Tang, Jincheng Zhang, Yue Hao (2026). 1980 V Vertical GaN-on-GaN Trench MOSFET with Step-Etched Implanted Guard Ring. Chinese Physics B.DOI
52. Daoyuan Li, Shenglei Zhao, Xiufeng Song, Naixuan Wang, Longyang Yu, Juan Gui, Ga Zhang, Xuejing Sun, Yichen Zhang, Linhuan Gao, Yue Hao, Jincheng Zhang (2026). Breakdown Mechanisms of Vertical GaN Junction Field-Effect Transistors and Enhanced Figure of Merit Using Gradient Doping Channel. IEEE Transactions on Electron Devices.DOI
53. Hongda Chen, Mei Wu, S S Li, Haolun Sun, Yuanmeng Xiang, Zishuo Dong, Ling Yang, MF Zhang, Hao Lu, Bin Hou, Xiaohua Ma, Yue Hao (2026). Recent progress on GaN-on-GaN technology for RF applications. Journal of Physics D Applied Physics.DOI
54. Hao Lu, Bin Hou, Ling Yang, Longge Deng, MF Zhang, Mei Wu, Kai Cheng, Xiaohua Ma, Yue Hao (2026). High Power Density Millimeter-Wave Ultra-Thin InGaN Channel DH-HEMTs. IEEE Electron Device Letters.DOI
55. Kuo Zhang, Kai Liu, C S Wang, Yuhan Luo, Jiahui Ren, Wentao Zhang, Yunlong He, Xuefeng Zheng, Xiaohua Ma, Yue Hao (2026). Hybrid p-n Junction/Ohmic Gate p-GaN HEMT With Enhanced Threshold Voltage Stability and Large Gate Swing. IEEE Electron Device Letters.DOI
56. Maoteng Lu, Pengfei Wang, Minhan Mi, Xiangxin Cao, Xiang Du, Feiyang Chen, Dongxu Xiao, Xiaohua Ma, Yue Hao (2026). Improved Electrical Performance of Thin-Barrier AlGaN/GaN HEMTs by Dual-Layer SiN Passivation. IEEE Transactions on Electron Devices.DOI
57. Long Chen, Hao Lu, Longge Deng, Yuechao Du, Mengqi Liu, Ling Yang, Bin Hou, MF Zhang, Mei Wu, Xiaohua Ma, Yue Hao (2026). High-PAE Gold-Free AlGaN/GaN HEMT With Al–Si Alloy Gate Fabrication Process for 5G Applications. IEEE Transactions on Electron Devices.DOI
58. Qingyuan Chang, Ling Yang, Bin Hou, Mao Jia, Youjun Zhu, Mei Wu, MF Zhang, Qing Zhu, Hao Lu, Xichen Wang, Chunzhou Shi, Jiale Du, Qian Yu, Mengdi Li, Xiaohua Ma, Yue Hao (2026). 4.3-kV Fully Vertical β -Ga 2 O 3 Heterojunction Barrier Schottky Diode With Sputtered p-GaN. IEEE Transactions on Electron Devices.DOI
59. Pengfei Wang, Minhan Mi, Feiyang Chen, Xiang Du, Xiangxin Cao, Jingshu Guo, Zhentong Huang, Dongxu Xiao, Xiaohua Ma, Weimin Bao, Yue Hao (2026). High-Al-composition AlGaN-barrier GaN HEMT for high-power Ka-band operation. Journal of Alloys and Compounds.DOI
60. Danmei Lin, Xuefeng Zheng, Xiaohu Wang, Longbing Yi, Rui Han, Kai Liu, Hao Zhang, Yingzhe Wang, Xiaohua Ma, Yue Hao (2026). Investigation on the Single-Event Burnout Mechanism and Hardening Design in p-GaN Gate AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices.DOI
61. Tianqi Pan, Bin Hou, Ling Yang, Jiale Du, Kaiwen Chen, Yifan Chen, Hailin Liu, Mei Wu, Meng Zhang, Hao Lu, Mao Jia, Xiaohua Ma, Yue Hao (2026). Analytical Model on the Threshold Voltage of Charge-Trap-Based Hybrid Gate-Stack GaN MIS-HEMT. IEEE Transactions on Electron Devices.DOI
62. X M Liu, Shengrui Xu, Hongchang Tao, Huake Su, Tao Zhang, Lei Xie, Xinhao Wang, Yuan Gao, Jincheng Zhang, Yue Hao (2026). Scattering-suppression induced two-dimensional hole gas mobility enhancement in GaN p-FETs with a multiperiod scattering-modulated barrier layer. Science China Information Sciences.DOI
63. Hao Zhang, Xuefeng Zheng, Jian Fu Zhang, Kang Li, Weidong Zhang, Vazgen Sh. Melikyan, Xiaohua Ma, Yue Hao (2026). The Degradation Mechanism of GaN RF HEMTs Under High-Temperature Operation Stress: Effects of High Drain Current and High Drain Voltage. IEEE Transactions on Electron Devices.DOI
64. Li Zhang, Xuefeng Zheng, Danmei Lin, Hao Zhang, Xiaohu Wang, Kang Li, Shunyu Wang, F S Zhang, Yingzhe Wang, Peipei Hu, Jie Liu, Xiaohua Ma, Yue Hao (2026). Study on the Single-Event Burnout Mechanism of Ka-Band GaN MMIC Power Amplifiers Under Heavy Ion Irradiation. IEEE Transactions on Electron Devices.DOI
65. Zhiqing Yang, Ming Xiao, Yuhao Zhang, Zihan Lin, Xi Liu, Kui Dang, Xiufeng Song, Shenglei Zhao, Kai Su, Zeyang Ren, Jinfeng Zhang, Yue Hao, Jincheng Zhang (2026). A >2.5 kV, 93 ps GaN Diode Avalanche Shaper With 1.68 GW/cm 2 Peak Power Density. IEEE Electron Device Letters.DOI
66. Kuo Zhang, Kai Liu, Yunlong He, Chong Wang, Wentao Zhang, Xuefeng Zheng, Xiaohua Ma, Yue Hao (2026). High threshold voltage and enhanced threshold voltage stability of Schottky p-GaN gate HEMT by p-GaN bridge engineering. Science China Information Sciences.DOI
67. Tao Zhang, Yu Du, Huake Su, Peng Wu, Hongchang Tao, Longyang Yu, Xiangdong Li, Kai Su, Shengrui Xu, Yue Hao, Jincheng Zhang (2026). A 3.63-mV/K Temperature Sensor Based on GaN p-i-n Diode With Energy-Band-Modulated InGaN Quantum Well. IEEE Transactions on Electron Devices.DOI
68. Hao Zhang, Xuefeng Zheng, Tian Zhu, Bin Wang, Xiao Wang, Jian Xiang, Hongwei Luo, Xiaohua Ma, Yue Hao (2026). Investigation of single-event effects induced by heavy ion irradiation on GaN MMIC power amplifiers. Micro and Nanostructures.DOI
69. Yi Yang, Mingchao Yang, Zhaoyuan Gu, Songquan Yang, Bangyao Mao, Weihua Liu, Chuanyu Han, Li Geng, Yue Hao (2026). A Novel Self-Activated Gate-Clamping SiC MOSFET Enhancing Short Circuit Capability With Merit of Multicell Combination. IEEE Transactions on Electron Devices.DOI
70. Bowen Zhang, Jiejie Zhu, Yimin Lei, Yuxiang Wei, Lingjie Qin, Yuxi Zhou, Mengdi Li, Mingchen Zhang, Hong Wang, Yue Hao, Xiaohua Ma (2026). Wafer-Level Heterogeneous Integration of GaN NMOS and CNT PMOS Transistors Using Direct-Immersion Technology. IEEE Electron Device Letters.DOI
71. Xu Zou, Meng Zhang, Ling Yang, Bin Hou, Mei Wu, Chupeng Yi, Hao Lu, Mao Jia, Qian Yu, Yutong Jiang, Xiaohua Ma, Yue Hao (2026). Structure-Dependent Parameter Trade-Off Optimization on RonCoff and Power Compression of AlGaN/GaN HEMTs for RF Switch Application. Micromachines.DOI
72. Hao Lu, Xiaohua Ma, Longge Deng, Ling Yang, Bin Hou, Meng Zhang, Mei Wu, Yue Hao (2026). High power density X-band source-connected field plate-free AlGaN/GaN HEMT with recessed gate oxidation process. Science China Information Sciences.DOI
73. Yifan Li, Yachao Zhang, Sheng Yi Wu, Shengrui Xu, Kelin Wang, Haijun Liu, Yu Zhang, Junwei Liu, Lu Hao, Zhihong Liu, Yue Hao, Jincheng Zhang (2026). The influence of nucleation layer growth modulation on the RF loss of Si-based GaN epitaxial wafers. Nanotechnology.DOI
74. Yaning Zhang, Haidi Wu, Haoran Zhang, Shiyu Li, Xinchen Ji, Zhichun Yang, Xinbo Zhang, Ling Bai, Juncheng Zheng, Dong Wang, Yue Hao, Jing Ning, Jincheng Zhang (2026). Coordinated B diffusion Gaussian distribution AlGaN/GaN HEMT device by quasi-van der Waals epitaxy. Science China Information Sciences.DOI
75. Qian Yu, Ling Yang, Long Zhang, Chunzhou Shi, Bin Hou, Mei Wu, Meng Zhang, Hao Lu, Xu Zou, Wenze Gao, Xiaohua Ma, Yue Hao (2026). High linearity and high-power of composite component graded-AlGaN/graded-InGaN/ GaN HEMTs. Science China Information Sciences.DOI
76. Guangjie Gao, Zhihong Liu, Lu Hao, Weichuan Xing, Hanghai Du, Hong Yu Zhou, Jincheng Zhang, Yue Hao (2026). Investigation on Hafnium-Based Ohmic Contact for AlN/GaN Heterostructures With Low Contact Resistance and Smooth Metal Surface. IEEE Transactions on Electron Devices.DOI
77. Xuejing Sun, Shenglei Zhao, Longyang Yu, Shengrui Xu, Haobin Wei, Wenbao Han, Ga Zhang, Yachao Zhang, Shuzhen You, Yue Hao, Jincheng Zhang (2026). An Optimization Method to Reduce Power Loop Inductance Based on Embedded Decoupling Capacitor for GaN-Based Half-Bridge Circuits. IEEE Journal of Emerging and Selected Topics in Power Electronics.DOI
78. Pengfei Wang, Minhan Mi, Feiyang Chen, Zhentong Huang, Jingyun Yao, Xiang Du, Qing Zhu, Dongxu Xiao, Xiangxin Cao, Xiaohua Ma, Weimin Bao, Yue Hao (2026). Ka-Band V-Gate AlGaN/GaN/AlN HEMT With 21.1-W/mm Output Power Density. IEEE Microwave and Wireless Technology Letters.DOI
79. Tianjiao Guo, Xiangdong Li, Qi Chen, Tao Zhang, Long Chen, Lezhi Wang, Zilan Li, Yue Hao, Jincheng Zhang (2026). Pushing the Thickness Down to 250 nm: Next-Generation Ultrathin C:GaN Buffer on 6-in Sapphire for p-GaN Gate HEMTs. IEEE Transactions on Electron Devices.DOI
80. Ting Zhou, Yilong Lei, Lili Zhai, Zhibo Chen, Qingping Xiao, Wenjuan Zhang, Wenzhen Chen, Liang Wang, Yi Wang, Kai Cheng, Xi Jiang, Shenglei Zhao, Yue Hao, Jincheng Zhang, Shuzhen You (2026). Demonstration of Multifinger GaN-on-Si Quasi-Vertical Trench MOSFETs Reaching I max /V B of 8 A/298 V. IEEE Transactions on Electron Devices.DOI
81. Zhiqiang Xue, Bin Hou, Mao Jia, Qian Xiao, Bowen Yang, Ling Yang, Mei Wu, Meng Zhang, Hao Lu, Kaiwen Chen, Hong Wang, Xiaohua Ma, Yue Hao (2026). 1.6 GW/cm 2 Baliga’s Figure-of-Merit Au-Free p-GaN Gate HEMTs on 6-inch Si Enabled by Regrown Ohmic Contacts. IEEE Electron Device Letters.DOI
82. Ziyan Wan, Tao He, Jing Ning, Jin Rao, Haijun Li, Zhili Zhang, Haoran Zhang, Jincheng Zhang, Yue Hao (2026). Analytical investigation on field-effect mobility and performance of HEMTs with low contact resistance via regrowth and ion implantation. Journal of Physics D Applied Physics.DOI
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519. Xiangdong Li, Meng Wang, Jin-Cheng Zhang, R. Gao, Hongyue Wang, Wei-Tao Yang, Jiahui Yuan, S. You, Jing-Jing Chang, Zhi-Hong Liu, Yue Hao (2023). Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization. Micromachines.DOI
520. Yin-He Wu, Shuang Liu, Jin-Cheng Zhang, Sheng-Lei Zhao, Xiangdong Li, Kai Zhang, Yue Ai, Weihang Zhang, Tang-Sheng Chen, Yue Hao (2023). Novel In-Situ AlN/p-GaN Gate HEMTs With Threshold Voltage of 3.9 V and Maximum Applicable Gate Voltage of 12.1 V. IEEE Transactions on Electron Devices.DOI
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523. Ren Huang, Weihang Zhang, Jin-Cheng Zhang, Chun-Hui Su, Xi Liu, Liyu Fu, Yue Hao (2023). 2.29-kV GaN-based double-channel Schottky barrier diodes on Si substrates with high VON uniformity. Science China Information Sciences.DOI
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525. Xiu-Feng Song, Jin-Cheng Zhang, Yin-He Wu, Sheng-Lei Zhao, Lin Du, Q. Feng, Weiwei Zhang, Zhong-Xu Wang, Feng Wu, Shuang Liu, Zhi-Hong Liu, Yue Hao (2023). 60Co gamma irradiation effects on GaN quasi-vertical Schottky barrier diodes with passivation layer and their post-irradiation annealing behavior. Applied Physics Express.DOI
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527. Yi-Xin Yao, Ya-Chao Zhang, Jin-Cheng Zhang, Yi-Fan Li, Jinbang Ma, Kai Chen, Jia-Duo Zhu, Sheng-Rui Xu, Jun-Chun Bai, Bin Cheng, Sheng-Lei Zhao, Yue Hao (2023). Research on the mechanism and influence of P incorporation in N-rich nitride AlPN and growth of high quality AlPN/GaN HEMT. Vacuum.DOI
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535. Sheng-Lei Zhao, Jin-Cheng Zhang, Q. Feng, Lin Du, Weiwei Zhang, Si-Wei Ji, Xiu-Feng Song, Feng Wu, Weihang Zhang, Zhao-Ke Bian, Zhi-Hong Liu, Yue Hao (2023). Parameter Shift of Quasi-Vertical GaN-on-Si Schottky Barrier Diodes Under On-State Forward-Current (2–4 kA/cm2) Stress. IEEE Transactions on Electron Devices.DOI
536. Kui Dang, Huining Liu, C. Zhang, Shudong Huo, Peng Zhan, Zhilin Qiu, Ya-Chao Zhang, Hong Zhou, Jing Ning, Jin-Cheng Zhang, Yue Hao (2023). First Demonstration of Watt-Level C-Band MMIC Rectifier With GaN Schottky Diode. IEEE Microwave and Wireless Technology Letters.DOI
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540. Xu Liu, Sheng-Rui Xu, Hong-Chang Tao, Yanrong Cao, Xin-Hao Wang, Hengsheng Shan, Jin-Cheng Zhang, Yue Hao (2023). High Efficiency Deep Ultraviolet Light-Emitting Diodes With Polarity Inversion of Hole Injection Layer. IEEE Photonics Journal.DOI
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546. Hongye Ma, Wentao Wang, Yuncong Cai, Zhengxing Wang, Tao Zhang, Q. Feng, Yi-Qiang Chen, Chun-Fu Zhang, Jin-Cheng Zhang, Yue Hao (2023). Analysis of single event effects by heavy ion irradiation of Ga2O3 metal–oxide–semiconductor field-effect transistors. Journal of Applied Physics.DOI
547. Haidi Wu, Jing Ning, Jin-Cheng Zhang, Yu Zeng, Yanqing Jia, Jianglin Zhao, Ling Bai, Yanbo Wang, Shi-Yu Li, Dong Wang, Yue Hao (2023). High quality AlN film assisted by graphene/sputtered AlN buffer layer for deep-ultraviolet-LED. Nanotechnology.DOI
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549. Haifeng Chen, K. Ma, Qin Lu, Xiaoyang Li, Xiang-Tai Liu, Yue Hao (2023). Ultra-wide single crystal nanobelts of β-Ga_2O_3 synthesized by carbothermal reduction. Applied Physics A.DOI
550. Chenlu Wang, Qinglong Yan, Chao-Qun Zhang, Chun-Hui Su, Kun Zhang, Sihan Sun, Zhi-Hong Liu, Weihang Zhang, Sami Alghamdi, Emad Ghandourah, Chun-Fu Zhang, Jin-Cheng Zhang, Hong Zhou, Yue Hao (2023). β-Ga₂O₃ Lateral Schottky Barrier Diodes With > 10 kV Breakdown Voltage and Anode Engineering. IEEE Electron Device Letters.DOI
551. Yangyang Gao, Xusheng Tian, Q. Feng, Xiao-Li Lu, Chun-Fu Zhang, Jin-Cheng Zhang, Yue Hao (2023). Tuning electronic properties in tin-assisted n-type ε-Ga2O3:Zr thin films via PLD for p-n heterojunction. Applications of Surface Science.DOI
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553. Boyu Wang, Jing Ning, Jin-Cheng Zhang, Chi Zhang, Dong Wang, Yue Hao (2023). Twist angle modulated electronic properties and band alignments of hydrogen-terminated diamond (1 1 1)/hexagonal boron nitride heterostructures. Applications of Surface Science.DOI
554. Zhiqing Yang, Yanrong Cao, Jin-Feng Zhang, Qi He, Kai Su, Ze-Yang Ren, Jin-Cheng Zhang, Jun-Peng Li, Yuan-Chen Ma, Dong Wang, Yong Wu, Yue Hao (2023). Simulation of Pulse Sharpening Mechanism of Vertical Diamond Avalanche Diode. IEEE Transactions on Electron Devices.DOI
555. Chenlu Wang, Qinglong Yan, Chun-Hui Su, Sami Alghamdi, Emad Ghandourah, Zhi-Hong Liu, Xin Feng, Weihang Zhang, Kui Dang, Ying-Ming Wang, Jian Wang, Jin-Cheng Zhang, Hong Zhou, Yue Hao (2023). Demonstration of the β-Ga₂O₃ MOS-JFETs With Suppressed Gate Leakage Current and Large Gate Swing. IEEE Electron Device Letters.DOI
556. Dongsheng Cui, Yawei Du, Zhen-Hua Lin, Mengyang Kang, Yi-Fei Wang, Jie Su, Jin-Cheng Zhang, Yue Hao, Jing-Jing Chang (2023). Coexistence of Bipolar and Unipolar Resistive Switching Behavior in Amorphous Ga₂O₃ Based Resistive Random Access Memory Device. IEEE Electron Device Letters.DOI
557. Xiao-Meng Fan, Sheng-Rui Xu, Yu-Zhi Huang, Wei-Guo Liu, Hong-Chang Tao, Jin-Cheng Zhang, Yue Hao (2023). Improved Efficiency Droop of 370 nm UV LEDs with ITO/Au/ITO Structure. ECS Journal of Solid State Science and Technology.DOI
558. Ang Li, Chong Wang, Xuefeng Zheng, Xiaohua Ma, Yunlong He, Kai Liu, Yaopeng Zhao, Yue Hao (2023). Half-FinFET Based on Double-Channel AlGaN/GaN Heterostructure. China International Forum on Solid State Lighting & International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS).DOI
559. Wang Ye, Xiaoli Lu, Xu Wang, Dan Wang, Haisheng Liu, Hanpeng Zhang, Min Xie, Xiaohua Ma, Yue Hao (2023). Fundamental Trade-Off Between the Operating Frequency and Output Power Density in Linear-Mode Modulated SiC Photoconductive Switch. IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP).DOI
560. Dayan Yuan, Chengxiang Duan, Wenliang Liu, Huanhuan Jia, Yang Lu, Xiaohua Ma, Yue Hao (2023). 25~32GHz Wideband Low Noise Amplifier using 0.15µm GaN-on-SiC Technology. IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP).DOI
561. Yuan Gao, Shengrui Xu, Jincheng Zhang, Jinfeng Zhang, Hongchang Tao, Yachao Zhang, Huake Su, Boxiang Yun, Yue Hao (2023). Evolutionary growth strategy of GaN on (1 1 1) diamond modulated by nano-patterned buffer engineering. Materials & Design.DOI
562. Yuan Gao, Xinhao Wang, Shengrui Xu, Jiaduo Zhu, Huake Su, Ruobing Wang, Hongchang Tao, Xü Liu, Jincheng Zhang, Yachao Zhang, Yue Hao (2023). The solution of wetting issues in GaN epitaxy on (111) SCD with magnetron sputtered AlN. Journal of Alloys and Compounds.DOI
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564. Meng Zhang, Yilin Chen, Siyin Guo, Hao Lu, Qing Zhu, Minhan Mi, Mei Wu, Bin Hou, Ling Yang, Xiaohua Ma, Yue Hao (2023). Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications. Micromachines.DOI
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567. Yingzhe Wang, Xuefeng Zheng, Tian Zhu, Shaozhong Yue, Ailing Pan, Shengrui Xu, Peixian Li, Xiaohua Ma, Jincheng Zhang, Lixin Guo, Yue Hao (2023). Proton-irradiation-induced degradation in GaN-based UV LEDs: Role of unintentionally doped carbon. Applied Physics Letters.DOI
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570. Tian-Jiao Han, Weidong Zhu, Tianran Wang, Gang Yang, Yuanbo Zhou, He Xi, Peng Zhong, Peng Zhong, Dazheng Chen, Jincheng Zhang, Chunfu Zhang, Chunfu Zhang, Yue Hao (2023). MXene‐Interconnected Two‐Terminal, Mechanically‐Stacked Perovskite/Silicon Tandem Solar Cell with High Efficiency. Advanced Functional Materials.DOI
571. Yahui Feng, Hongxia Guo, Wuying Ma, Jiawen Hu, Xiaoping Ouyang, Jinxin Zhang, Fengqi Zhang, Hong Zhang, Ruxue Bai, Xiaohua Ma, Yue Hao (2023). Effect of 60Coγ ray radiation on electrical properties of SiGe HBTs at low temperatures. Microelectronics Journal.DOI
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573. Fenning Liu, Yueyuan Zhang, Yue Peng, WenWu Xiao, Genquan Han, Yan Liu, Yue Hao (2023). Impact of multi-domain effect on the effective carrier mobility of ferroelectric field-effect transistor. Nanotechnology.DOI
574. Yanshuang Ba, Yaoyu Han, Weidong Zhu, Tianran Wang, Jiawei Chi, He Xi, Tianlong Zhao, Dazheng Chen, Jincheng Zhang, Chunfu Zhang, Chunfu Zhang, Yue Hao (2023). Water-assisted mass preparation of CsPbBr3-CsPb2Br5-CsPbIxBr3-x composite wafers for high-performance X-ray detection. Chemical Engineering Journal.DOI
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576. Ying Ting Zhou, Yunlong He, Xiaoli Lu, Zhan Wang, Xianqiang Song, Yang Liu, Xiaohua Ma, Yue Hao (2023). Research on the surface morphology of ß-Ga2O3films with different growth conditions. IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP).DOI
577. Bochang Li, Yibo Wang, Zheng‐Dong Luo, Wenhui Xu, Hehe Gong, Tiangui You, Xin Ou, Jiandong Ye, Yue Hao, Genquan Han (2023). Gallium oxide (Ga2O3) heterogeneous and heterojunction power devices. Fundamental Research.DOI
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773. Momo Zhao, Saisai Wang, Dingwei Li, Rui Wang, Fanfan Li, Mengqi Wu, Kun Liang, Huihui Ren, Xiaorui Zheng, Chengchen Guo, Xiaohua Ma, Bowen Zhu, Hong Wang, Yue Hao (2022). Silk Protein Based Volatile Threshold Switching Memristors for Neuromorphic Computing. Advanced Electronic Materials.DOI
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776. Yuwei Zhou, Minhan Mi, Jiejie Zhu, Yutong Han, Can Gong, Pengfei Wang, Yilin Chen, Jielong Liu, Xiaohua Ma, Yue Hao (2022). A Novel Regrown Ohmic Contact Technique to Improve the Performance of GaN HEMT. IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP).DOI
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778. Pengfei Wang, Minhan Mi, Zhihong Chen, Sirui An, Yuwei Zhou, Xiang Du, Xiaohua Ma, Yue Hao (2022). Improved Linearity Performance at High Operation Voltage on Dual-threshold Coupling AlGaN/GaN HEMTs by Modulating the Duty Ratio. IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP).DOI
779. Tao Liu, Tingting Wang, Yang Li, Lin‐An Yang, Jin‐Ping Ao, Yue Hao (2022). Ultra-High Efficiency Microwave Rectifier Based on Patterned GaN Schottky Barrier Diode. IEEE MTT-S International Wireless Symposium (IWS).DOI
780. Ang Li, Chong Wang, Xuefeng Zheng, Xiaohua Ma, Yunlong He, Kai Liu, Yaopeng Zhao, Yue Hao (2022). Multichannel AlGaN/GaN Schottky Barrier Diode with Low Turn‐On Voltage and On‐Resistance. physica status solidi (a).DOI
781. Yanan Han, Shuiying Xiang, Yuna Zhang, Shuang Gao, Aijun Wen, Yue Hao (2022). An All-MRR-Based Photonic Spiking Neural Network for Spike Sequence Learning. Photonics.DOI
782. Haodong Hu, Ze Kun Feng, Yibo Wang, Yan Liu, Hong Dong, Yue‐Yang Liu, Yue Hao, Genquan Han (2022). The role of surface pretreatment by low temperature O2 gas annealing for β -Ga2O3 Schottky barrier diodes. Applied Physics Letters.DOI
783. Zheng‐Dong Luo, Siqing Zhang, Yan Liu, Yan Liu, Dawei Zhang, Xuetao Gan, Jan Seidel, Yang Liu, Yang Liu, Genquan Han, Marin Alexe, Yue Hao (2022). Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing. ACS Nano.DOI
784. Yao Chen, Lin‐An Yang, Hang-Bo Yue, Yuchen Liu, Zhi Hao Jin, Yongbo Su, Yue Hao (2022). Investigation on Effect of Doped InP Subchannel Thickness and Delta-Doped InP Layer of Composite Channel HEMT. IEEE Transactions on Electron Devices.DOI
785. Jing Wei Sun, Zhan Wang, Saisai Wang, Mei Yang, Haixia Gao, Hong Wang, Xiaohua Ma, Yue Hao (2022). Physical Unclonable Functions Based on Transient Form of Memristors for Emergency Defenses. IEEE Electron Device Letters.DOI
786. Huan Liu, Jing Li, Guosheng Wang, Jiajia Chen, Xiao Yu, Yan Liu, Chengji Jin, Shulong Wang, Yue Hao, Genquan Han (2022). Analog Synapses Based on Nonvolatile FETs With Amorphous ZrO2 Dielectric for Spiking Neural Network Applications. IEEE Transactions on Electron Devices.DOI
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788. Jiajia Chen, Huan Liu, Chengji Jin, Xiaole Jia, Xiao Yu, Yue Peng, Ran Cheng, Bing Chen, Yan Liu, Yue Hao, Genquan Han (2022). A Physics-Based Model for Mobile-Ionic Field-Effect Transistors With Steep Subthreshold Swing. IEEE Journal of the Electron Devices Society.DOI
789. Maodan Ma, Yanrong Cao, Hanghang Lv, Zhiheng Wang, Xin‐Xiang Zhang, Chuan Chen, Linshan Wu, Ling Lv, Xuefeng Zheng, Wenchao Tian, Xiaohua Ma, Yue Hao (2022). Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs. Micromachines.DOI
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792. Ziyue Zhao, Yilin Chen, Yang Lu, Hengshuang Zhang, Chupeng Yi, Yuchen Wang, Jiuding Zhou, Wenliang Liu, Pengfei Wang, Minhan Mi, Meng Zhang, Xiaohua Ma, Yue Hao (2022). Influence of Fin-Like Configuration on Small-Signal Performance of AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices.DOI
793. Jiang Liu, Chuanyu Han, Weihua Liu, Li Geng, Yue Hao (2022). Leakage Reduction of Quasi-Vertical GaN Schottky Barrier Diode With Post Oxygen Plasma Treatment. IEEE Transactions on Electron Devices.DOI
794. Yilin Chen, Qing Zhu, Jiejie Zhu, Minhan Mi, Meng Zhang, Yuwei Zhou, Ziyue Zhao, Xiaohua Ma, Yue Hao (2022). Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light. Science China Information Sciences.DOI
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796. Pengfei Wang, Minhan Mi, Sirui An, Xiang Du, Xiaohua Ma, Yue Hao (2022). A Novel Concept of using Double Threshold Voltage Coupling to Improve the linearity of AlGaN/GaN HEMTs for millimeter-wave applications. IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA).DOI
797. Ling Yang, Hao Lu, Xuerui Niu, Meng Zhang, Chunzhou Shi, Longge Deng, Bin Hou, Minhan Mi, Mei Wu, Kai Cheng, Qing Zhu, Yang Lu, Ling Lv, Xiaohua Ma, Yue Hao (2022). Investigation of contact mechanism and gate electrostatic control in multi-channel AlGaN/GaN high electron mobility transistors with deep recessed ohmic contact. Journal of Applied Physics.DOI
798. Hao Lu, Bin Hou, Ling Yang, Fang Song, Meng Zhang, Mei Wu, Xiaohua Ma, Yue Hao (2022). Low-Resistance Ta/Al/Ni/Au Ohmic Contact and Formation Mechanism on AlN/GaN HEMT. IEEE Transactions on Electron Devices.DOI
799. Xuerui Niu, Xiaohua Ma, Meng Zhang, Ling Yang, Bin Hou, Mei Wu, Fuchun Jia, Xinchuang Zhang, Chong Wang, Yue Hao (2022). Influence of Mg Out‐Diffusion Effect on the Threshold Voltage of GaN‐Based p‐Channel Heterostructure Field‐Effect Transistors. physica status solidi (b).DOI
800. Fang Zhang, Xuefeng Zheng, Hao Zhang, Minhan Mi, Yunlong He, Ming Du, Xiaohua Ma, Yue Hao (2022). Linearity Enhancement of AlGaN/GaN HEMTs With Selective-Area Charge Implantation. IEEE Electron Device Letters.DOI
801. Siyu Liu, Xiaohua Ma, Jiejie Zhu, Minhan Mi, Jingshu Guo, Jielong Liu, Yilin Chen, Qing Zhu, Ling Yang, Yue Hao (2022). Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method. Science China Information Sciences.DOI
802. Siyu Liu, Jiejie Zhu, Jingshu Guo, Kai Cheng, Minhan Mi, Lingjie Qin, Jielong Liu, Fuchun Jia, Hao Lu, Xiaohua Ma, Yue Hao (2022). Improved Breakdown Voltage and Low Damage E-Mode Operation of AlON/AlN/GaN HEMTs Using Plasma Oxidation Treatment. IEEE Electron Device Letters.DOI
803. Yuxin Ye, Mei Wu, Yanmei Kong, Ruiwen Liu, Ling Yang, Xuefeng Zheng, Binbin Jiao, Xiaohua Ma, Weimin Bao, Yue Hao (2022). Active Thermal Management of GaN-on-SiC HEMT With Embedded Microfluidic Cooling. IEEE Transactions on Electron Devices.DOI
804. Tao Liu, Yang Li, Jiayi Yang, Tingting Wang, Xiao Wang, Lin‐An Yang, Michael David Dickey, Jin‐Ping Ao, Yue Hao (2022). High-Efficiency and High-Current GaN-Based Microwave Rectifier for Wireless Strain Sensing and Monitoring. IEEE Transactions on Microwave Theory and Techniques.DOI
805. Pengfei Wang, Minhan Mi, Xiang Du, Yuwei Zhou, Jielong Liu, Zhihong Chen, Sirui An, Yilin Chen, Jiejie Zhu, Xuefeng Zheng, Xiaohua Ma, Yue Hao (2022). Optimization of linearity at high electrical field for dual threshold coupling AlGaN/GaN HEMT applied in Ka-band applications. Applied Physics Letters.DOI
806. Fuchun Jia, Xiaohua Ma, Ling Yang, Xinchuang Zhang, Bin Hou, Meng Zhang, Mei Wu, Xuerui Niu, Jiale Du, Siyu Liu, Yue Hao (2022). 930V and Low-Leakage Current GaN-on-Si Quasi-Vertical PiN Diode With Beveled-Sidewall Treated by Self-Aligned Fluorine Plasma. IEEE Electron Device Letters.DOI
807. Jiang Liu, Chuanyu Han, Mingchao Yang, Weihua Liu, Li Geng, Yue Hao (2022). High-Performance GaN Vertical Schottky Barrier Diode With Self-Alignment Trench Structure. IEEE Transactions on Electron Devices.DOI
808. Jielong Liu, Minhan Mi, Jiejie Zhu, Pengfei Wang, Yuwei Zhou, Siyu Liu, Qing Zhu, Meng Zhang, Bin Hou, Hong Wang, Ling Yang, Xiaohua Ma, Yue Hao (2022). High-Performance AlGaN/GaN HEMTs With Hybrid Schottky–Ohmic Drain for Ka-Band Applications. IEEE Transactions on Electron Devices.DOI
809. Mei Wu, Ke Cheng, Ling Yang, Bin Hou, Xinchuang Zhang, Ping Wang, Meng Zhang, Qing Zhu, Xuefeng Zheng, Yansheng Hu, Xiaohua Ma, Yue Hao (2022). Structural and thermal analysis of polycrystalline diamond thin film grown on GaN-on-SiC with an interlayer of 20 nm PECVD-SiN. Applied Physics Letters.DOI
810. Pengfei Wang, Minhan Mi, Meng Zhang, Qing Zhu, Jiejie Zhu, Yuwei Zhou, Jun-Wen Chen, Yilin Chen, Jielong Liu, Ling Yang, Bin Hou, Xiaohua Ma, Yue Hao (2022). Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V fmax·VBK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates. Applied Physics Letters.DOI
811. Zhezhe Cong, Xiaoli Lu, Xiaowen Tang, Jianing Li, Zekun Shi, Dangpo Wang, Yunlong He, Xiaohua Ma, Yue Hao (2022). Ferroelectric domain induced giant enhancement of two-dimensional electron gas density in ultrathin-barrier AlGaN/GaN heterostructures. Applied Surface Science.DOI
812. Jiaqi Zhang, Weihang Zhang, Jing Wan, Guofang Yang, Yanan Cheng, Yachao Zhang, Dazheng Chen, Shenglei Zhao, Jincheng Zhang, Chunfu Zhang, Yue Hao (2022). Enhanced breakdown voltage of Si-GaN monolithic heterogeneous integrated Cascode FETs by the device structure design. Solid-State Electronics.DOI
813. Xiao-Yu Zhang, Lin‐An Yang, Xiaolin Hu, Wen-Lu Yang, Yuchen Liu, Yang Li, Xiaohua Ma, Yue Hao (2022). Simulation Study of Lateral Schottky Barrier IMPATT Diode Based on AlGaN/GaN 2-DEG for Terahertz Applications. IEEE Transactions on Electron Devices.DOI
814. Yuwei Zhou, Minhan Mi, Mei Yang, Yutong Han, Pengfei Wang, Yilin Chen, Jielong Liu, Can Gong, Yiwei Lu, Meng Zhang, Qing Zhu, Xiaohua Ma, Yue Hao (2022). High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure. Applied Physics Letters.DOI
815. Jielong Liu, Jiejie Zhu, Minhan Mi, Qing Zhu, Siyu Liu, Pengfei Wang, Yuwei Zhou, Ziyue Zhao, Jiuding Zhou, Meng Zhang, Mei Wu, Bin Hou, Hong Wang, Ling Yang, Xiaohua Ma, Yue Hao (2022). 8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer. Applied Physics Letters.DOI
816. Shuang Liu, Jincheng Zhang, Shenglei Zhao, Lei Shu, Xiufeng Song, Xuexue Qin, Yinhe Wu, Weihang Zhang, Tongde Li, Liang Wang, Zhihong Liu, Yuanfu Zhao, Yue Hao (2022). Simulation Research on Single Event Burnout Performances of p-GaN Gate HEMTs With 2DEG Al x Ga1-x N Channel. IEEE Transactions on Electron Devices.DOI
817. Haiyong Wang, Wei Mao, Shenglei Zhao, Yuanhao He, Jiabo Chen, Ming Du, Xuefeng Zheng, Chong Wang, Chunfu Zhang, Jincheng Zhang, Yue Hao (2022). Unidirectional p-GaN gate HEMT with composite source-drain field plates. Science China Information Sciences.DOI
818. Ling Yang, Hao Lu, Meng Zhang, Xuerui Niu, Chuzhou Shi, Bin Hou, Minhan Mi, Mei Wu, Qing Zhu, Yang Lu, Ling Lv, Kai Cheng, Xiaohua Ma, Yue Hao (2022). Investigation on the Influence of Ohmic Structure on Channel-to-Channel Coupling Effect in InAlN/GaN Double Channel HEMTs. IEEE Journal of the Electron Devices Society.DOI
819. Siying Zheng, Jiuren Zhou, Ning Liu, Wenjing Feng, Yupeng Yao, Mengkuo Cui, Bochang Li, Jie Liang, Yan Liu, Yue Hao, Genquan Han (2022). Low Thermal Budget Reconfigurable Fully Depleted Silicon on Insulator Field-Effect-Transistors With Embedded Boolean Logic. IEEE Electron Device Letters.DOI
820. Yahui Zhang, Shuiying Xiang, Xingyu Cao, Xingxing Guo, Genquan Han, Yue Hao (2022). Plastic Photonic Synapse Based on VCSOA for Self-Learning in Photonic Spiking Neural Network. Journal of Lightwave Technology.DOI
821. Dianzhuang Zheng, Shuiying Xiang, Xingxing Guo, Yahui Zhang, Biling Gu, Hongji Wang, Zhenzhen Xu, Xiaojun Zhu, Yuechun Shi, Yue Hao (2022). Experimental demonstration of coherent photonic neural computing based on a Fabry–Perot laser with a saturable absorber. Photonics Research.DOI
822. Yue Peng, Qiuxia Wu, Zhe Wang, Fenning Liu, Yan Liu, Yue Hao, Genquan Han (2022). HfZrOx Hybrid DRAM/FRAM Arrays Featuring Excellent Endurance and Low Latency. IEEE Electron Device Letters.DOI
823. Yanrong Cao, Min Wang, Xuefeng Zheng, En Xia Zhang, Ling Lv, Liang Wang, Maodan Ma, Hanghang Lv, Zhiheng Wang, Yongkun K. Wang, Wenchao Tian, Xiaohua Ma, Yue Hao (2022). Combined Effect of TID Radiation and Electrical Stress on NMOSFETs. Micromachines.DOI
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825. Ziwei Song, Shuiying Xiang, Siting Zhao, Yahui Zhang, Xingxing Guo, Ye Tian, Yuechun Shi, Yue Hao (2022). A Hybrid-Integrated Photonic Spiking Neural Network Framework Based on an MZI Array and VCSELs-SA. IEEE Journal of Selected Topics in Quantum Electronics.DOI
826. Chentao Fu, Shuiying Xiang, Yanan Han, Ziwei Song, Yue Hao (2022). Multilayer Photonic Spiking Neural Networks: Generalized Supervised Learning Algorithm and Network Optimization. Photonics.DOI
827. Yibo Wang, Hehe Gong, Xiaole Jia, Jiandong Ye, Yan Liu, Haodong Hu, Xin Ou, Xiaohua Ma, Rong Zhang, Yue Hao, Genquan Han (2022). Demonstration of β-Ga₂O₃ Superjunction-Equivalent MOSFETs. IEEE Transactions on Electron Devices.DOI
828. Qinglong Yan, Hehe Gong, Hong Yu Zhou, Jincheng Zhang, Jiandong Ye, Zhihong Liu, Chenlu Wang, Xuefeng Zheng, Rong Zhang, Yue Hao (2022). Low density of interface trap states and temperature dependence study of Ga2O3 Schottky barrier diode with p-NiOx termination. Applied Physics Letters.DOI
829. Dongliang Zhang, Xiang Ying Sun, Yanyan Zhang, Chunmin Cheng, Yuzheng Guo, Zhiyin Gan, Sheng Liu, Yue Hao (2022). Theoretical study of n-type diamond with Li doping and Li-B co-doping: A density functional simulation. Diamond and Related Materials.DOI
830. Yuehua Hong, Xuefeng Zheng, Yunlong He, Zijian Yuan, Xiangyu Zhang, Fang Zhang, Hao Zhang, Xiaoli Lu, Xiaohua Ma, Yue Hao (2022). Demonstration on dynamic evolution of energy band offsets based in NiOx/Ga2O3 P-N heterojunction interface under heat effect. Applied Surface Science.DOI
831. Ruoying Kanyang, Cizhe Fang, Qiyu Yang, Yao Shao, Genquan Han, Yan Liu, Yue Hao (2022). Electro-Optical Modulation in High Q Metasurface Enhanced with Liquid Crystal Integration. Nanomaterials.DOI
832. Jiuding Zhou, Chupeng Yi, Yuchen Wang, Wenliang Liu, Yang Lu, Bin Hou, Xiaohua Ma, Yuanfu Zhao, Yue Hao (2022). An asymmetric Doherty amplifier with class‐J mode in GaAs HBT technology for n78 frequency band. International Journal of RF and Microwave Computer-Aided Engineering.DOI
833. Qiang Li, Mingdi Wang, Yunhe Bai, Qifan Zhang, Haoran Zhang, Zhenhuan Tian, Yanan Guo, Jingping Zhu, Yuhuai Liu, Feng Yun, Tao Wang, Yue Hao (2022). Two‐Inch Wafer‐Scale Exfoliation of Hexagonal Boron Nitride Films Fabricated by RF‐Sputtering. Advanced Functional Materials.DOI
834. Pinyun Yi, Zhangming Zhu, Nuo Xu, Liang Fang, Yue Hao (2022). A Unity‐Gain Buffer Assisted Noise‐Shaping SAR ADC Based on Error‐Feedback Structure. Chinese Journal of Electronics.DOI
835. Qing Cui Wan, Changjin Wan, Huaqiang Wu, Yuchao Yang, Xiaohe Huang, Peng Zhou, Lin Chen, Tianyu Wang, Yi Li, Kan‐Hao Xue, Yuhui He, Xiangshui Miao, Xi Li, Chenchen Xie, Houpeng Chen, Zhitang Song, Hong Wang, Yue Hao, Junyao Zhang, Jia Huang, Zheng Yu Ren, Li Qiang Zhu, Jianyu Du, Chen Ge, Yang Liu, Guanglong Ding, Ye Zhou, Su‐Ting Han, Guosheng Wang, Xiao Yi Yu, Bing Chen, Zhufei Chu, Lunyao Wang, Yinshui Xia, Chen Mu, Feng Lin, Chixiao Chen, Bojun Cheng, Yannan Xing, Weitao Zeng, Hong Chen, Lei Yu, Giacomo Indiveri, Ning Qiao (2022). 2022 roadmap on neuromorphic devices and applications research in China. Neuromorphic Computing and Engineering.DOI
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837. Rui Wang, Saisai Wang, Kun Liang, Yuhan Xin, Fanfan Li, Yaxiong Cao, Jiaxin Lv, Qi Liang, Yaqian Peng, Bowen Zhu, Xiaohua Ma, Hong Wang, Yue Hao (2022). Bio‐Inspired In‐Sensor Compression and Computing Based on Phototransistors (Small 23/2022). Small.DOI
838. Rui Wang, Saisai Wang, Kun Liang, Yuhan Xin, Fanfan Li, Yaxiong Cao, Jiaxin Lv, Qi Liang, Yaqian Peng, Bowen Zhu, Xiaohua Ma, Hong Wang, Yue Hao (2022). Bio‐Inspired In‐Sensor Compression and Computing Based on Phototransistors. Small.DOI
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840. Danyang Yao, Jinchuan Zhang, Zhiwei Jia, Yan Liu, Shuman Liu, Genquan Han, Fengqi Liu, Yue Hao (2022). Lateral waveguide scanner integration on surface-emitting mid-infrared lasers. Applied Optics.DOI
841. Ying Yong Hu, Jiaping Wang, Peng Zhao, Zhenhua Lin, Siyu Zhang, Jie Su, Miao Zhang, Jincheng Zhang, Jingjing Chang, Yue Hao (2021). Reveal the large open-circuit voltage deficit of all-inorganic CsPbIBr2 perovskite solar cells. Chinese Physics B.DOI
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844. Yunlong He, Fang Zhang, Kai Liu, Yuehua Hong, Xue-Feng Zheng, Chong Wang, Xiaohua Ma, Yue Hao (2021). Simulation design of normally-off AlGaN/GaN high-electron-mobility transistors with p-GaN Schottky hybrid gate. Chinese Physics B.DOI
845. Pengfei Wang, Minhan Mi, Meng Zhang, Jiejie Zhu, Yuwei Zhou, Jielong Liu, Sijia Liu, Ling Yang, Bin Hou, Xiaohua Ma, Yue Hao (2021). High linearity AlGaN/GaN HEMT with double-V th coupling for millimeter-wave applications. Chinese Physics B.DOI
846. Wen-Lu Yang, Lin‐An Yang, Fei‐Xiang Shen, Hao Zou, Yang Li, Xiaohua Ma, Yue Hao (2021). Current oscillation in GaN-HEMTs with p-GaN islands buried layer for terahertz applications. Chinese Physics B.DOI
847. Ruo-Han Li, Wu-Xiong Fei, Rui Tang, Zhaoxi Wu, Chao Duan, Tao Zhang, Dan Zhu, Weihang Zhang, Shenglei Zhao, Jincheng Zhang, Yue Hao (2021). Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure*. Chinese Physics B.DOI
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852. Long Zhou, Jie Su, Zhen-Hua Lin, Xing Guo, Jing Ma, Tao Li, Jin-Cheng Zhang, Jing-Jing Chang, Yue Hao (2021). Synergistic Interface Layer Optimization and Surface Passivation with Fluorocarbon Molecules toward Efficient and Stable Inverted Planar Perovskite Solar Cells. Research.DOI
853. Lu Wang, Jie Su, YuJia Guo, Zhen-Hua Lin, Yue Hao, Jing-Jing Chang (2021). 97.3% Pb-Reduced CsPb1-xGexBr3 Perovskite with Enhanced Phase Stability and Photovoltaic Performance through Surface Cu Doping. Journal of Physical Chemistry Letters.DOI
854. Dazheng Chen, Baichuan Tian, Gang Fan, Yilin Wang, Weidong Zhu, Ze-Yang Ren, He Xi, Kai Su, Jin-Feng Zhang, Chun-Fu Zhang, Jin-Cheng Zhang, Yue Hao (2021). Simple and Convenient Interface Modification by Nanosized Diamond for Carbon Based All-Inorganic CsPbIBr2 Solar Cells.DOI
855. Yanqing Jia, Hai-Bin Guo, Jing Ning, Jin-Cheng Zhang, Dong Wang, Boyu Wang, Haidi Wu, Xue Shen, Chi Zhang, Yue Hao (2021). Flexible High-Stability Self-Variable-Voltage Monolithic Integrated System Achieved by High-Brightness LED for Information Transmission. Small.DOI
856. Xin Feng, Sen Wang, Pratteek Das, Xiaoyu Shi, Shuang-Hao Zheng, Feng Zhou, Jing Ning, Dong Wang, Jin-Cheng Zhang, Yue Hao, Zhong-Shuai Wu (2021). Ultrahigh-rate and high-frequency MXene micro-supercapacitors for kHz AC line-filtering. Journal of Energy Chemistry.DOI
857. Yanshuang Ba, Sunjie Huangfu, Miao Li, Junxiao Ma, Weidong Zhu, Dazheng Chen, He Xi, Jin-Cheng Zhang, Chun-Fu Zhang, Yue Hao (2021). All-Inorganic Two-Dimensional Ruddlesden-Popper Perovskite Cs2PbI2Cl2 Nanosheet Films for Self-Powered, Visible-Blind UV Photodetectors. International Conference on ASIC.DOI
858. Si-Yu Zhang, Jie Su, Jin-Cheng Zhang, Jing-Jing Chang, Yue Hao (2021). Unveiling the Relationship between Passivation Groups and the Structural and Optoelectronic Performances of Perovskite Surfaces and Devices. Journal of Physical Chemistry C.DOI
859. YuJia Guo, Jie Su, Lu Wang, Zhen-Hua Lin, Yue Hao, Jing-Jing Chang (2021). Improved Doping and Optoelectronic Properties of Zn-Doped Cspbbr3 Perovskite through Mn Codoping Approach. Journal of Physical Chemistry Letters.DOI
860. Haidi Wu, Jing Ning, Yanqing Jia, Chaochao Yan, Yu Zeng, Hai-Bin Guo, Jianglin Zhao, Yanbo Wang, Jin-Cheng Zhang, Dong Wang, Yue Hao (2021). Van der Waals Self-Assembled Silica-Nanosphere/Graphene Buffer Layer for High-Quality Gallium Nitride Growth. Crystal Growth & Design.DOI
861. Yu-Guo Zhang, H. Ma, Xin-Lei Gan, Yupeng Hui, Yueying Zhang, Jie Su, Ming Yang, Zhaosheng Hu, Juanxiu Xiao, Xiao-Li Lu, Jin-Cheng Zhang, Yue Hao (2021). Emergent Midgap Excitons in Large‐Size Freestanding 2D Strongly Correlated Perovskite Oxide Films. Advanced Optical Materials.DOI
862. Yi-Fei Wang, Jie Su, Haidong Yuan, Zhen-Hua Lin, Jin-Cheng Zhang, Yue Hao, Jing-Jing Chang (2021). Impurity level properties in transition metal doped α-Ga2O3 for optoelectronic applications. Semiconductor Science and Technology.DOI
863. Yangyang Gao, Zhourui Xu, Xusheng Tian, Q. Feng, Xiao-Li Lu, Chun-Fu Zhang, Jin-Cheng Zhang, Yue Hao (2021). Synthesis of n-type ZrO2 doped ε-Ga2O3 thin films by PLD and fabrication of Schottky diode. Journal of Alloys and Compounds.DOI
864. Yu-Guo Zhang, H. Ma, Xin-Lei Gan, Yupeng Hui, Yueying Zhang, Jie Su, Ming Yang, Zhaosheng Hu, Juanxiu Xiao, Xiao-Li Lu, Jin-Cheng Zhang, Yue Hao (2021). Emergent Midgap Excitons in Large‐Size Freestanding 2D Strongly Correlated Perovskite Oxide Films (Advanced Optical Materials 10/2021).DOI
865. Yanqing Jia, Haidi Wu, Jianglin Zhao, Hai-Bin Guo, Yu Zeng, Boyu Wang, Chi Zhang, Ya-Chao Zhang, Jing Ning, Jin-Cheng Zhang, Tao Zhang, Dong Wang, Yue Hao (2021). Growth mechanism on graphene-regulated high-quality epitaxy of flexible AlN film. CrysteEngComm.DOI
866. Jing Ma, Jie Su, Zhen-Hua Lin, Jian He, Long Zhou, Tao Li, Jin-Cheng Zhang, Sheng-Zhong Liu, Jing-Jing Chang, Yue Hao (2021). Double Side Interfacial Optimization for Low‐Temperature Stable CsPbI2Br Perovskite Solar Cells with High Efficiency Beyond 16%. Energy & Environmental Materials.DOI
867. Jia-Yu Di, Hao-Jin Li, Jie Su, Haidong Yuan, Zhen-Hua Lin, Kui Zhao, Jing-Jing Chang, Yue Hao (2021). Reveal the Humidity Effect on the Phase Pure CsPbBr3 Single Crystals Formation at Room Temperature and Its Application for Ultrahigh Sensitive X‐Ray Detector. Advancement of science.DOI
868. Zeyang Zhang, Yanshuang Ba, Dan-Dan Chen, Junxiao Ma, Weidong Zhu, He Xi, Dazheng Chen, Jin-Cheng Zhang, Chun-Fu Zhang, Yue Hao (2021). Generic water-based spray-assisted growth for scalable high-efficiency carbon-electrode all-inorganic perovskite solar cells. iScience.DOI
869. Si-Yu Zhang, Jie Su, Jin-Cheng Zhang, Zhen-Hua Lin, Haidong Yuan, Jing-Jing Chang, Yue Hao (2021). Impacts of the Electron Transport Layer Surface Reconstruction on the Buried Interface in Perovskite Optoelectronic Devices. Journal of Physical Chemistry Letters.DOI
870. H. Ma, Xin Gan, Lei Li, Yu-Guo Zhang, Yueying Zhang, Yupeng Hui, Jian-Hui Zhou, Z. Zhong, Jin-Cheng Zhang, Yue Hao (2021). Electrically controllable zero-energy states in Rashba oxide heterostructure with in-plane magnetic field cooling. Applied Physics Letters.DOI
871. Weidong Zhu, Wenming Chai, Dan-Dan Chen, Junxiao Ma, Dazheng Chen, He Xi, Jin-Cheng Zhang, Chun-Fu Zhang, Yue Hao (2021). High-Efficiency (>14%) and Air-Stable Carbon-Based, All-Inorganic CsPbI2Br Perovskite Solar Cells through a Top-Seeded Growth Strategy.DOI
872. Peng Zhao, Jie Su, YuJia Guo, Lu Wang, Zhen-Hua Lin, Yue Hao, X. Ouyang, Jing-Jing Chang (2021). Cs2TiI6: A potential lead-free all-inorganic perovskite material for ultrahigh-performance photovoltaic cells and alpha-particle detection. Nano Reseach.DOI
873. Jia-Qi Zhang, Yichang Wu, Guofang Yang, Dazheng Chen, Jin-Cheng Zhang, Hai-Long You, Chun-Fu Zhang, Yue Hao (2021). Optimization of Sacrificial Layer Etching in Single-Crystal Silicon Nano-Films Transfer Printing for Heterogeneous Integration Application. Nanomaterials.DOI
874. Hang Dong, Shang-Zheng Pang, Feng-Qin He, Hai-Feng Yang, Weidong Zhu, Dazheng Chen, He Xi, Jin-Cheng Zhang, Yue Hao, Chun-Fu Zhang (2021). Annealing‐Free, High‐Performance Perovskite Solar Cells by Controlling Crystallization via Guanidinium Cation Doping. Solar RRL.DOI
875. Xin Feng, Xiao-Yu Shi, Jing Ning, Dong Wang, Jin-Cheng Zhang, Yue Hao, Zhong-Shuai Wu (2021). Recent advances in micro-supercapacitors for AC line-filtering performance: From fundamental models to emerging applications. eScience.DOI
876. Yaopeng Zhao, Chong Wang, Xuefeng Zheng, Xiao-Hua Ma, Yunlong He, Kai Liu, Ang Li, Yue Hao (2021). Threshold Voltage Modulation Engineering Using p‐Type CuO and NiO for the AlGaN/GaN Enhancement‐Mode Fin‐MOS‐HEMTs on the Si Substrates. Physica Status Solidi (a).DOI
877. S. Deng, Kai Liu, Chong Wang, Xuefeng Zheng, Xiao-Hua Ma, Runhao Wang, Yaopeng Zhao, Ang Li, Yunlong He, Wei Mao, Yue Hao (2021). The Influence of Recessed Floating Metal Rings Structure on Electrical Properties of AlGaN/GaN Schottky Barrier Diodes. Physica Status Solidi (a).DOI
878. Boyu Wang, Jing Ning, Jin-Cheng Zhang, Dong Wang, Xinyi Yang, Yanqing Jia, Chi Zhang, Yu Zeng, Yue Hao (2021). Ballistic transport in sub-10 nm monolayer planar GaN transistors for high-performance and low-power applications. Applied Physics Letters.DOI
879. Jinjuan Du, Sheng-Rui Xu, Ruoshi Peng, Xiao-Meng Fan, Ying Zhao, Hong-Chang Tao, Hua-Ke Su, Mu-Tong Niu, Jin-Cheng Zhang, Yue Hao (2021). Enhancement of optical characteristic of InGaN/GaN multiple quantum-well structures by self-growing air voids. Science China Technological Sciences.DOI
880. Jia-Qi Zhang, Weihang Zhang, J. Wan, Guofang Yang, Yichang Wu, Ya'nan Cheng, Ya-Chao Zhang, Dazheng Chen, Sheng-Lei Zhao, Jin-Cheng Zhang, Chun-Fu Zhang, Yue Hao (2021). 1.2 kV reverse blocking Schottky-drain Si–GaN monolithic integrated cascode FET. AIP Advances.DOI
881. Ang Li, Chong Wang, Sheng-Rui Xu, Xuefeng Zheng, Yunlong He, Xiao-Hua Ma, Xiao-Li Lu, Jinfeng Zhang, Kai Liu, Yaopeng Zhao, Yue Hao (2021). Lattice-matched AlInN/GaN multi-channel heterostructure and HEMTs with low on-resistance. Applied Physics Letters.DOI
882. Dazheng Chen, Peng Yuan, Sheng-Lei Zhao, Shuang Liu, Qian Xin, Xiu-Feng Song, Shiqi Yan, Ya-Chao Zhang, He Xi, Weidong Zhu, Weihang Zhang, Jia-Qi Zhang, Hong Zhou, Chun-Fu Zhang, Jin-Cheng Zhang, Yue Hao (2021). Wide-range-adjusted threshold voltages for E-mode AlGaN/GaN HEMT with a p-SnO cap gate. Science China Materials.DOI
883. He-Peng Zhang, Jun-Shuai Xue, Zhi-Peng Sun, Lan-Xing Li, JiaJia Yao, Fang Liu, Xueyan Yang, Guanlin Wu, zumao li, YongRui Fu, Zhi-Hong Liu, Jin-Cheng Zhang, Yue Hao (2021). 1039 kA/cm2 peak tunneling current density in GaN-based resonant tunneling diode with a peak-to-valley current ratio of 1.23 at room temperature on sapphire substrate. Applied Physics Letters.DOI
884. Wei Mao, Shihao Xu, Haiyong Wang, Cui Yang, Shenglei Zhao, Jiabo Chen, Yachao Zhang, Chunfu Zhang, Jincheng Zhang, Yue Hao (2021). Effect of oxygen plasma treatment on the performance of recessed AlGaN/GaN Schottky barrier diodes. Applied Physics Express.DOI
885. Hao Lu, Bin Hou, Ling Yang, Meng Zhang, Longge Deng, Mei Wu, Zeyan Si, Sen Huang, Xiaohua Ma, Yue Hao (2021). High RF Performance GaN-on-Si HEMTs With Passivation Implanted Termination. IEEE Electron Device Letters.DOI
886. Tao Zhang, Ruohan Li, Juan J. Lu, Yanni Zhang, Yueguang Lv, Xiaoling Duan, Shengrui Xu, Jincheng Zhang, Yue Hao (2021). A 0.43 V/90 nA/mm Lateral AlGaN/GaN Schottky Barrier Diode With Plasma-Free Groove Anode Technique. IEEE Electron Device Letters.DOI
887. Dujun Zhao, Zhaoxi Wu, Chao Duan, Bo Mei, Zhongyang Li, Zhongxu Wang, Qing Tang, Qing Yang, Yinhe Wu, Weihang Zhang, Zhihong Liu, Shenglei Zhao, Jincheng Zhang, Yue Hao (2021). Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate. Science China Information Sciences.DOI
888. Haiyong Wang, Wei Mao, Cui Yang, Jiabo Chen, Shenglei Zhao, Ming Du, Xiaofei Wang, Xuefeng Zheng, Chong Wang, Chunfu Zhang, Jincheng Zhang, Yue Hao (2021). Lateral AlGaN/GaN Schottky Barrier Diode With Arrayed p-GaN Islands Termination. IEEE Transactions on Electron Devices.DOI
889. Jiabo Chen, Xiufeng Song, Zhihong Liu, Xiaoling Duan, Haiyong Wang, Zhaoke Bian, Shenglei Zhao, Jincheng Zhang, Yue Hao (2021). A GaN-on-Si quasi-vertical Schottky barrier diode with enhanced performance using fluorine ion-implanted field rings. Applied Physics Express.DOI
890. Siyu Liu, Kunzhe Zhang, Shuliang Cao, Zhongguang Wu, Yongyi Xu, Yang Li, Lin‐An Yang, Yue Hao (2021). Design and Optimization of Terahertz Bandpass Filter Based on SiC Substrate. Cross Strait Radio Science and Wireless Technology Conference (CSRSWTC).DOI
891. Hao Lu, Xiaohua Ma, Bin Hou, Ling Yang, Yue Hao (2021). Improved Breakdown Characteristics for AlN/GaN/InGaN Coupling Channel HEMTs with $\text{SiN}_{x}$ Removal and Backfill Technique. IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).DOI
892. Haiyong Wang, Wei Mao, Cui Yang, Shenglei Zhao, Ming Du, Xiaofei Wang, Xuefeng Zheng, Chong Wang, Chunfu Zhang, Jincheng Zhang, Yue Hao (2021). High performance GaN-based monolithic bidirectional switch using diode bridges. Applied Physics Express.DOI
893. Haiyong Wang, Wei Mao, Shenglei Zhao, Beiluan Gao, Ming Du, Xuefeng Zheng, Chong Wang, Chunfu Zhang, Jincheng Zhang, Yue Hao (2021). High-performance reverse blocking p-GaN HEMTs with recessed Schottky and p-GaN isolation blocks drain. Applied Physics Letters.DOI
894. Yuchen Liu, Lei Hu, Zhen Ma, Jianshe Lou, Lin Du, Yang Li, Lin‐An Yang, Jin‐Ping Ao, Yue Hao (2021). Terahertz Monolithic Integrated Cavity Filter Based on SiC Substrate. IEEE MTT-S International Wireless Symposium (IWS).DOI
895. Haiyong Wang, Wei Mao, Shenglei Zhao, Jiabo Chen, Ming Du, Xuefeng Zheng, Chong Wang, Chunfu Zhang, Jincheng Zhang, Yue Hao (2021). Reverse blocking p-GaN gate AlGaN/GaN HEMTs with hybrid p-GaN ohmic drain. Superlattices and Microstructures.DOI
896. Jiabo Chen, Zhihong Liu, Zhaoke Bian, Haiyong Wang, Xiaoling Duan, Jing Ning, Jincheng Zhang, Yue Hao (2021). Nearly ideal quasi-vertical GaN Schottky barrier diode with 1010 high on/off ratio and ultralow turn on voltage via post anode annealing. IEEE Electron Devices Technology & Manufacturing Conference (EDTM).DOI
897. Hao Zou, Lin‐An Yang, Xiaohua Ma, Yue Hao (2021). Effect of jagged field plate structures on DC and RF performance of AlGaN/GaN HEMTs. Semiconductor Science and Technology.DOI
898. Yibo Wang, Wenhui Xu, Genquan Han, Tiangui You, Fengwen Mu, Haodong Hu, Yan Liu, Xinchuang Zhang, Hao Huang, Tadatomo Suga, Xin Ou, Xiaohua Ma, Yue Hao (2021). Channel Properties of Ga₂O₃-on-SiC MOSFETs. IEEE Transactions on Electron Devices.DOI
899. Yue Peng, Guoqing Zhang, Wenwu Xiao, Fenning Liu, Yan Liu, Guosheng Wang, Shulong Wang, Xiao Yu, Genquan Han, Yue Hao (2021). Ferroelectric-Like Non-Volatile FET With Amorphous Gate Insulator for Supervised Learning Applications. IEEE Journal of the Electron Devices Society.DOI
900. Yue Peng, Wenwu Xiao, Yan Liu, Chengji Jin, Xinran Deng, Yueyuan Zhang, Fenning Liu, Yunzhe Zheng, Yan Ming Cheng, Bing Chen, Xiao Yu, Yue Hao, Genquan Han (2021). HfO2-ZrO2 Superlattice Ferroelectric Capacitor With Improved Endurance Performance and Higher Fatigue Recovery Capability. IEEE Electron Device Letters.DOI
901. Wenying Cao, Zhaosheng Hu, Zhenhua Lin, Xing Guo, Jie Su, Jingjing Chang, Yue Hao (2021). Defects and doping engineering towards high performance lead-free or lead-less perovskite solar cells. Journal of Energy Chemistry.DOI
902. Tao Zhang, Yifan Li, Qian Cheng, Zhiguo Hu, Jinbang Ma, Yixin Yao, Yan Zuo, Qian Feng, Yachao Zhang, Hong Yu Zhou, Jing Ning, Chunfu Zhang, Jincheng Zhang, Yue Hao (2021). Influence of O2 pulse on the β-Ga2O3 films deposited by pulsed MOCVD. Ceramics International.DOI
903. Ming Qu, Yue Hao (2021). A linear range extension phase frequency detector and charge pump for frequency hopping acceleration and cycle slips elimination. Microwave and Optical Technology Letters.DOI
904. Dinghe Liu, Yuwen Huang, Zeyulin Zhang, Dazheng Chen, Qian Feng, Hailong You, Jincheng Zhang, Chunfu Zhang, Yue Hao (2021). Enhancing Breakdown Voltage of a Ga2O3 Schottky Barrier Diode with Small-Angle Beveled and High-k Oxide Field Plate. ECS Journal of Solid State Science and Technology.DOI
905. Jing‐Ya Deng, Dan-Dan Yuan, Jia‐Yuan Yin, Dongquan Sun, Lixin Guo, Xiaohua Ma, Yue Hao (2021). Ultracompact Bandpass Filter Based on Slow Wave Substrate Integrated Groove Gap Waveguide. IEEE Transactions on Microwave Theory and Techniques.DOI
906. Yuan Yuan, Weibing Hao, Wenxiang Mu, Zhengpeng Wang, Xuanhu Chen, Qi Liu, Guangwei Xu, Chenlu Wang, Hong Yu Zhou, Yanni Zou, Xiaolong Zhao, Zhitai Jia, Jiandong Ye, Jincheng Zhang, Shibing Long, Xutang Tao, Rong Zhang, Yue Hao (2021). Toward emerging gallium oxide semiconductors: A roadmap. Fundamental Research.DOI
907. Yue Hao, Fengyi Jiang (2021). Wide bandgap and ultra-wide bandgap semiconductors. Fundamental Research.DOI
908. Yanqing Jia, Haibin Guo, Jing Ning, Jincheng Zhang, Dong Wang, Boyu Wang, Haidi Wu, Xue Jin Shen, Chi Zhang, Yue Hao (2021). Flexible High‐Stability Self‐Variable‐Voltage Monolithic Integrated System Achieved by High‐Brightness LED for Information Transmission (Small 45/2021). Small.DOI
909. Dandan Chen, Yanshuang Ba, Minyu Deng, Weidong Zhu, Wenming Chai, He Xi, Dazheng Chen, Jincheng Zhang, Chunfu Zhang, Yue Hao (2021). High-Purity, Thick CsPbCl3 Films toward Selective Ultraviolet-Harvesting Visibly Transparent Photovoltaics. ACS Applied Energy Materials.DOI
910. Qing Liu, Danyang Yao, Yan Liu, Xinyi Liu, Yong Zhang, Genquan Han, Yue Hao (2021). Modulation of Q Factor and Fano Lineshape in Ge2Sb2Te5-Based Grating Structure. IEEE photonics journal.DOI
911. Fanfan Li, Rui Wang, Chunyan Song, Momo Zhao, Huihui Ren, Saisai Wang, Kun Liang, Dingwei Li, Xiaohua Ma, Bowen Zhu, Hong Wang, Yue Hao (2021). A Skin-Inspired Artificial Mechanoreceptor for Tactile Enhancement and Integration. ACS Nano.DOI
912. Tao Zhang, Yifan Li, Qian Cheng, Zhiguo Hu, Jinbang Ma, Yixin Yao, Chenxia Cui, Yan Zuo, Qian Feng, Yachao Zhang, Hong Yu Zhou, Jing Ning, Chunfu Zhang, Jincheng Zhang, Yue Hao (2021). Research on the crystal phase and orientation of Ga2O3 Hetero-epitaxial film. Superlattices and Microstructures.DOI
913. Yaopeng Zhao, Chong Wang, Xuefeng Zheng, Yunlong He, Xiaohua Ma, Kai Liu, Ang Li, Yue Hao (2021). Temperature-dependent characteristics for the p-type CuO gate HEMT and high-k HfO2 MIS-HEMT on the Si substrates. AIP Advances.DOI
914. Jiaxin Lv, Saisai Wang, Fanfan Li, Qi Liang, Mei Yang, Xiaohua Ma, Hong Wang, Yue Hao (2021). A Physically Transient Self-Rectifying and Analogue Switching Memristor Synapse. IEEE Electron Device Letters.DOI
915. Fuchao He, Yifei Wang, Zhenhua Lin, Jie Su, Jincheng Zhang, Jingjing Chang, Yue Hao (2021). Aqueous solution-deposited aluminum-gallium-oxide alloy gate dielectrics for low voltage fully oxide thin film transistors. Applied Physics Letters.DOI
916. Fuchao He, Yifei Wang, Haidong Yuan, Zhenhua Lin, Jie Su, Jincheng Zhang, Jingjing Chang, Yue Hao (2021). Solution processed In2O3/IGO heterojunction thin film transistors with high carrier concentration. Ceramics International.DOI
917. Jing Ma, Zhenhua Lin, Xing Guo, Long Zhou, Jian He, Junqing Yan, Jincheng Zhang, Yue Hao, Shengzhong Frank Liu, Jingjing Chang (2021). Secondary crystallization strategy for highly efficient inorganic CsPbI2Br perovskite solar cells with efficiency approaching 17%. Journal of Energy Chemistry.DOI
918. Yu Zhou, Jing Ning, Xue Jin Shen, Haibin Guo, Chi Zhang, Jianguo Dong, Wei Dong Lu, Xinliang Feng, Yue Hao (2021). An Ultrafast Quasi‐Non‐Volatile Semi‐Floating Gate Memory with Low‐Power Optoelectronic Memory Application. Advanced Electronic Materials.DOI
919. Lulu Chou, Yan Liu, Yang Xu, Yue Peng, Huan Liu, Xiao Yu, Genquan Han, Yue Hao (2021). Ge N-Channel MOSFETs with ZrO2 Dielectric Achieving Improved Mobility. Nanoscale Research Letters.DOI
920. Ao Cui, Jinfeng Zhang, Jinfeng Zhang, Zeyang Ren, Hong Yu Zhou, Wang Dong, Yong Jian Wu, Yingyi Lei, Jincheng Zhang, Jincheng Zhang, Yue Hao (2021). Microwave power performance analysis of hydrogen terminated diamond MOSFET. Diamond and Related Materials.DOI
921. Jian He, Jie Su, Zhenhua Lin, Jing Ma, Long Zhou, Siyu Zhang, Shengzhong Frank Liu, Jingjing Chang, Yue Hao (2021). Enhanced Efficiency and Stability of All‐Inorganic CsPbI 2 Br Perovskite Solar Cells by Organic and Ionic Mixed Passivation. Advanced Science.DOI
922. Chen Li, Ruijuan Tian, Ruixuan Yi, Siqi Hu, Yuxin Chen, Qingchen Yuan, Xutao Zhang, Yan Liu, Yue Hao, Xuetao Gan, Jianlin Zhao (2021). MoTe2 PN Homojunction Constructed on a Silicon Photonic Crystal Cavity for High-Performance Photodetector. ACS Photonics.DOI
923. Jiaduo Zhu, Wei Shang, Jing Ning, Dong Wang, Jincheng Zhang, Yue Hao (2021). Twisted angle modulated structural property, electronic structure and carrier transport of MoS2/AlN(0001) mixed-dimensional van der Waals heterostructure. Applied Surface Science.DOI
924. Qixian Liu, Jing Ning, Haibin Guo, Maoyang Xia, Boyu Wang, Xinliang Feng, Dong Wang, Jincheng Zhang, Yue Hao (2021). Tungsten-Modulated Molybdenum Selenide/Graphene Heterostructure as an Advanced Electrode for All-Solid-State Supercapacitors. Nanomaterials.DOI
925. Danyang Yao, Yong Zhang, Yan Huang, Yan Liu, Genquan Han, Yue Hao (2021). Ultra High Q and Widely Tunable Mie Resonance Nanofilter at Telecom Wavelengths. IEEE photonics journal.DOI
926. Yan Huang, Yan Liu, Yao Shao, Genquan Han, Jincheng Zhang, Yue Hao (2021). Actively Tunable Fano Resonance Based on a Bowtie-Shaped Black Phosphorus Terahertz Sensor. Nanomaterials.DOI
927. Peng Zhao, Jie Su, Yujia Guo, Lu Wang, Zhenhua Lin, Jincheng Zhang, Yue Hao, Xiaoping Ouyang, Jingjing Chang (2021). A new all-inorganic vacancy-ordered double perovskite Cs2CrI6 for high-performance photovoltaic cells and alpha-particle detection in space environment. Materials Today Physics.DOI
928. Yin Zhang, Jing‐Ya Deng, Dongquan Sun, Jia‐Yuan Yin, Lixin Guo, Xiaohua Ma, Yue Hao (2021). Slow Wave Substrate-Integrated Waveguide With Miniaturized Dimensions and Broadened Bandwidth. IEEE Transactions on Microwave Theory and Techniques.DOI
929. Fan Zhang, Yue Peng, Xinran Deng, Jiali Huo, Yan Liu, Genquan Han, Zhenhua Wu, Huaxiang Yin, Yue Hao (2021). Theoretical Study of Negative Capacitance FinFET With Quasi-Antiferroelectric Material. IEEE Transactions on Electron Devices.DOI
930. Jiaping Wang, Peng Zhao, Ying Yong Hu, Zhenhua Lin, Jie Su, Jincheng Zhang, Jingjing Chang, Yue Hao (2021). An Exploration of All‐Inorganic Perovskite/Gallium Arsenide Tandem Solar Cells. Solar RRL.DOI
931. Fenning Liu, Yue Peng, Yan Liu, Genquan Han, Wenwu Xiao, Bobo Tian, Ni Zhong, Hui Peng, Chun‐Gang Duan, Yue Hao (2021). Amorphous ZrO2 Tunnel Junction Memristor With a Tunneling Electroresistance Ratio Above 400. IEEE Electron Device Letters.DOI
932. Xiaofei Zhao, Jing‐Ya Deng, Jia‐Yuan Yin, Dongquan Sun, Lixin Guo, Xiaohua Ma, Yue Hao (2021). Novel Suspended-Line Gap Waveguide Packaged With Stacked-Mushroom EBG Structures. IEEE Transactions on Microwave Theory and Techniques.DOI
933. Yitian Bao, Shijie Xu, Zeyang Ren, Zhicheng Su, Jinfeng Zhang, Jincheng Zhang, Yue Hao (2021). Thermal behaviors of the sharp zero–phonon luminescence lines of NV center in diamond. Journal of Luminescence.DOI
934. Yao Chen, Lin‐An Yang, Zhi Hao Jin, Yongbo Su, Yue Hao (2021). Effect of Fixed Charges at Interface Between InP and Bonding Layer on Heterogeneous Integration of InP HEMTs. IEEE Transactions on Electron Devices.DOI
935. Zeyang Zhang, Dandan Chen, Weidong Zhu, Junxiao Ma, Wenming Chai, Dazheng Chen, Jincheng Zhang, Chunfu Zhang, Yue Hao (2021). Slow halide exchange in CsPbIBr2 films for high-efficiency, carbon-based, all-inorganic perovskite solar cells. Science China Materials.DOI
936. Xing Guo, Xiangping Huang, Jie Su, Zhenhua Lin, Jing Ma, Jingjing Chang, Yue Hao (2021). Reducing the interfacial energy loss via oxide/perovskite heterojunction engineering for high efficient and stable perovskite solar cells. Chemical Engineering Journal.DOI
937. Xing Guo, Jie Su, Zhenhua Lin, Xinhao Wang, Qingrui Wang, Zebing Zeng, Jingjing Chang, Yue Hao (2021). Synergetic surface charge transfer doping and passivation toward high efficient and stable perovskite solar cells. iScience.DOI
938. Saisai Wang, Bingjie Dang, Jing Wei Sun, Momo Zhao, Mei Yang, Xiaohua Ma, Hong Wang, Yue Hao (2021). Physically Transient Diode With Ultrathin Tunneling Layer as Selector for Bipolar One Diode-One Resistor Memory. IEEE Electron Device Letters.DOI
939. Siying Zheng, Jiuren Zhou, Harshit Agarwal, Jian Tang, Hongrui Zhang, Ning Liu, Yan Liu, Genquan Han, Yue Hao (2021). Proposal of Ferroelectric Based Electrostatic Doping for Nanoscale Devices. IEEE Electron Device Letters.DOI
940. Zeyang Ren, Yufei Xing, Dandan Lv, Jiamin Xu, Jinfeng Zhang, Jincheng Zhang, Kai Su, Chunfu Zhang, Hong Zhang, Qi He, Yue Hao (2021). H-diamond MOS interface properties and FET characteristics with high-temperature ALD-grown HfO2 dielectric. AIP Advances.DOI
941. Shangzheng Pang, Chunfu Zhang, Hang Dong, Zeyang Zhang, Dazheng Chen, Weidong Zhu, Jingjing Chang, Zhenhua Lin, Jincheng Zhang, Yue Hao (2021). Synchronous Interface Modification and Bulk Passivation via a One-Step Cesium Bromide Diffusion Process for Highly Efficient Perovskite Solar Cells. ACS Applied Materials & Interfaces.DOI
942. Xiaole Jia, Haodong Hu, Genquan Han, Yan Liu, Yue Hao (2021). Analytical Model for the Channel Maximum Temperature in Ga2O3 MOSFETs. Nanoscale Research Letters.DOI
943. Siqing Zhang, Huan Liu, Jiuren Zhou, Yan Liu, Genquan Han, Yue Hao (2021). ZrOx Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior. Nanoscale Research Letters.DOI
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946. Chenlu Wang, Jincheng Zhang, Shengrui Xu, Chunfu Zhang, Qian Feng, Yachao Zhang, Jing Ning, Shenglei Zhao, Hong Yu Zhou, Yue Hao (2021). Progress in state-of-the-art technologies of Ga 2 O 3 devices. Journal of Physics D Applied Physics.DOI
947. Chun-Xu Su, Wei Wen, Wu-Xiong Fei, Wei Mao, Jiajie Chen, Weihang Zhang, Shenglei Zhao, Jincheng Zhang, Yue Hao (2021). Design and simulation of AlN-based vertical Schottky barrier diodes*. Chinese Physics B.DOI
948. Fengqin He, Qian Wang, Weidong Zhu, Dazheng Chen, Jincheng Zhang, Chunfu Zhang, Yue Hao (2021). Carbon-based, all-inorganic, lead-free Ag2BiI5 rudorffite solar cells with high photovoltages. Solid-State Electronics.DOI
949. Jiayu Di, Zhenhua Lin, Jie Su, Jiaping Wang, Jincheng Zhang, Liu Shengzhong, Jingjing Chang, Yue Hao (2021). Two-Dimensional (C6H5C2H4NH3)2PbI4 Perovskite Single Crystal Resistive Switching Memory Devices. IEEE Electron Device Letters.DOI
950. Yahui Zhang, Shuiying Xiang, Xingxing Guo, Aijun Wen, Yue Hao (2021). A modified supervised learning rule for training a photonic spiking neural network to recognize digital patterns. Science China Information Sciences.DOI
951. Qingrui Wang, Zhenhua Lin, Jie Su, Zhaosheng Hu, Jingjing Chang, Yue Hao (2021). Recent progress of inorganic hole transport materials for efficient and stable perovskite solar cells. Nano Select.DOI
952. Wenming Chai, Junxiao Ma, Weidong Zhu, Dazheng Chen, He Xi, Jincheng Zhang, Chunfu Zhang, Yue Hao (2021). Suppressing Halide Phase Segregation in CsPbIBr2 Films by Polymer Modification for Hysteresis-Less All-Inorganic Perovskite Solar Cells. ACS Applied Materials & Interfaces.DOI
953. Xiao Wang, Qiong Ye, Lihua Bai, Xi Su, Tingting Wang, Taowei Peng, Xiao-Qi Zhai, Yi Huo, Hao Wu, Chang Liu, Yuyu Bu, Xiaohua Ma, Yue Hao, Jin‐Ping Ao (2021). Enhanced UV Emission from ZnO on Silver Nanoparticle Arrays by the Surface Plasmon Resonance Effect. Nanoscale Research Letters.DOI
954. Yan Zuo, Qian Feng, Tao Zhang, HaiFeng Luo, Xusheng Tian, Yuncong Cai, Yangyang Gao, Jincheng Zhang, Chunfu Zhang, Hong Yu Zhou, Yue Hao (2021). Impacts of oxygen source on band alignment of ALD Al2O3/(α-, ε-)Ga2O3 interface. Journal of Crystal Growth.DOI
955. Hao Lu, Xiaohua Ma, Bin Hou, Ling Yang, Teng Huo, Zeyan Si, Yue Hao (2021). Novel Selective Area Recessed Regrowth-free Ohmic Contacts to High Al-content Barrier. IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA).DOI
956. Haidong Yuan, Jie Su, Pengliang Zhang, Zhenhua Lin, Jincheng Zhang, Jie Zhang, Jingjing Chang, Yue Hao (2021). Tuning the intrinsic electric field of Janus-TMDs to realize high-performance β-Ga2O3 device based on β-Ga2O3/Janus-TMD heterostructures. Materials Today Physics.DOI
957. Hong Yu Zhou, Shifan Zeng, Jincheng Zhang, Zhihong Liu, Qian Feng, Shengrui Xu, Jinfeng Zhang, Yue Hao (2021). Comprehensive Study and Optimization of Implementing p-NiO in β-Ga2O3 Based Diodes via TCAD Simulation. Crystals.DOI
958. Yuehua Hong, Xue-Feng Zheng, Yunlong He, Fang Zhang, Xiangyu Zhang, Xichen Wang, Jianing Li, Dangpo Wang, Xiaoli Lu, Hongbo Han, Xiaohua Ma, Yue Hao (2021). The optimized interface characteristics of β -Ga2O3 Schottky barrier diode with low temperature annealing. Applied Physics Letters.DOI
959. Yaolin Cheng, Chunfu Zhang, Yu Xu, Zhe Li, Dazheng Chen, Weidong Zhu, Qian Feng, Shengrui Xu, Jincheng Zhang, Yue Hao (2021). Heteroepitaxial growth of β-Ga2O3 thin films on c-plane sapphire substrates with β-(AlxGa1-x)2O3 intermediate buffer layer by mist-CVD method. Materials Today Communications.DOI
960. Yong an Zhang, Danyang Yao, Yan Liu, Cizhe Fang, Shulong Wang, Guosheng Wang, Yan Qun Huang, Xiao Yu, Genquan Han, Yue Hao (2021). All-Optical Synapse With Directional Coupler Structure Based on Phase Change Material. IEEE photonics journal.DOI
961. Qi He, Jinfeng Zhang, Jinfeng Zhang, Zeyang Ren, Jincheng Zhang, Jincheng Zhang, Kai Su, Yingyi Lei, Dandan Lv, Tianhe Mi, Yue Hao (2021). Normally-off polycrystalline CH diamond MISFETs with MgF2 gate insulator and passivation. Diamond and Related Materials.DOI
962. Yanan Han, Shuiying Xiang, Ziwei Song, Aijun Wen, Yue Hao (2021). Spiking dynamics and synchronization properties of optical neurons based on VCSEL-SAs. Nonlinear Dynamics.DOI
963. Yinhe Wu, Weihang Zhang, Jincheng Zhang, Shenglei Zhao, Jun Luo, Xiao-Hong Tan, Wei Mao, Chunfu Zhang, Yachao Zhang, Kai Cheng, Zhihong Liu, Yue Hao (2021). Au-Free Al₀.₄Ga₀.₆N/Al₀.₁Ga₀.₉N HEMTs on Silicon Substrate With High Reverse Blocking Voltage of 2 kV. IEEE Transactions on Electron Devices.DOI
964. Tao Zhang, Zhiguo Hu, Yifan Li, Qian Cheng, Jinbang Ma, Xusheng Tian, Chunyong Zhao, Yan Zuo, Qian Feng, Yachao Zhang, Jing Ning, Hong Yu Zhou, Chunfu Zhang, Jincheng Zhang, Yue Hao (2021). Influence of Oxygen on β -Ga 2 O 3 Films Deposited on Sapphire Substrates by MOCVD. ECS Journal of Solid State Science and Technology.DOI
965. Yanli Wang, Peixian Li, Si-Yu Jiang, Xiaowei Zhou, Jinxing Wu, Wenkai Yue, Yue Hao (2021). Enhancing the Luminous Efficiency of Ultraviolet Light Emitting Diodes By Adjusting the Al Composition of Pre-Well Superlattice. IEEE photonics journal.DOI
966. Yue Hao, Shuiying Xiang, Genquan Han, Jincheng Zhang, Xiaohua Ma, Zhangming Zhu, Xingxing Guo, Yahui Zhang, Yanan Han, Ziwei Song, Yan Liu, Ling Yang, Hong Yu Zhou, Jiangyi Shi, Wei Zhang, Min Xu, Weisheng Zhao, Biao Pan, Yangqi Huang, Qi Liu, Yimao Cai, Jian Feng Zhu, Xin Ou, Tiangui You, Huaqiang Wu, Bin Gao, Zhiyong Zhang, Guo‐Ping Guo, Yonghua Chen, Yong Liu, Xiangfei Chen, Chunlai Xue, Xingjun Wang, Lixia Zhao, Xihua Zou, Lianshan Yan, Ming Li (2021). Recent progress of integrated circuits and optoelectronic chips. Science China Information Sciences.DOI
967. Yu Xu, Yaolin Cheng, Zhe Li, Qian Feng, Yachao Zhang, Dazheng Chen, Weidong Zhu, Jincheng Zhang, Chunfu Zhang, Yue Hao (2021). High performance gate tunable solar blind ultraviolet phototransistors based on amorphous Ga2O3 films grown by mist chemical vapor deposition. Nano Select.DOI
968. Jiaduo Zhu, Xing Chen, Wei Shang, Jing Ning, Dong Wang, Jincheng Zhang, Yue Hao (2021). Van der Waals contact between 2D magnetic VSe2 and transition metals and demonstration of high-performance spin-field-effect transistors. Science China Materials.DOI
969. Shuang Gao, Shuiying Xiang, Ziwei Song, Yanan Han, Yue Hao (2021). All-optical Sudoku solver with photonic spiking neural network. Optics Communications.DOI
970. Jieying Wang, Hong Yu Zhou, Jincheng Zhang, Jincheng Zhang, Zhihong Liu, Shengrui Xu, Qian Feng, Jing Ning, Chunfu Zhang, Peijun Ma, Jinfeng Zhang, Jinfeng Zhang, Yue Hao (2021). Demonstration of Al0.85Ga0.15N Schottky barrier diode with > 3 kV breakdown voltage and the reverse leakage currents formation mechanism analysis. Applied Physics Letters.DOI
971. Yu Xu, Yaolin Cheng, Zhe Li, Dazheng Chen, Shengrui Xu, Qian Feng, Weidong Zhu, Yachao Zhang, Jincheng Zhang, Chunfu Zhang, Yue Hao (2021). Ultrahigh‐Performance Solar‐Blind Photodetectors Based on High Quality Heteroepitaxial Single Crystalline β‐Ga 2 O 3 Film Grown by Vacuumfree, Low‐Cost Mist Chemical Vapor Deposition. Advanced Materials Technologies.DOI
972. Yibo Wang, Wenhui Xu, Genquan Han, Tiangui You, Haodong Hu, Yan Liu, Hao Huang, Xin Ou, Xiaohua Ma, Yue Hao (2021). Channel Mobility Properties of β-Ga2O3 MOSFETs on Si Substrate Fabricated by Ion-cutting Process. IEEE Electron Devices Technology & Manufacturing Conference (EDTM).DOI
973. Yahui Zhang, Shuiying Xiang, Xingyu Cao, Shihao Zhao, Xingxing Guo, Aijun Wen, Yue Hao (2021). Experimental demonstration of pyramidal neuron-like dynamics dominated by dendritic action potentials based on a VCSEL for all-optical XOR classification task. Photonics Research.DOI
974. Qinglong Yan, Hehe Gong, Jincheng Zhang, Jiandong Ye, Hong Yu Zhou, Zhihong Liu, Shengrui Xu, Chenlu Wang, Zhuangzhuang Hu, Qian Feng, Jing Ning, Chunfu Zhang, Peijun Ma, Rong Zhang, Yue Hao (2021). β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron,sp value of 0.93 GW/cm2. Applied Physics Letters.DOI
975. Chenlu Wang, Hehe Gong, Weina Lei, Yuncong Cai, Zhuangzhuang Hu, Shengrui Xu, Zhihong Liu, Qian Feng, Hong Yu Zhou, Jiandong Ye, Jincheng Zhang, Rong Zhang, Yue Hao (2021). Demonstration of the p-NiOx/n-Ga2O3 Heterojunction Gate FETs and Diodes With BV2/Ron,sp Figures of Merit of 0.39 GW/cm2 and 1.38 GW/cm2. IEEE Electron Device Letters.DOI
976. Zhe Li, Zhaoqing Feng, Yu Xu, Qian Feng, Weidong Zhu, Dazheng Chen, Hong Yu Zhou, Jincheng Zhang, Chunfu Zhang, Yue Hao (2021). High Performance β-Ga2O3 Solar-Blind Metal–Oxide–Semiconductor Field-Effect Phototransistor With Hafnium Oxide Gate Dielectric Process. IEEE Electron Device Letters.DOI
977. Yanan Han, Shuiying Xiang, Zhenxing Ren, Chentao Fu, Aijun Wen, Yue Hao (2021). Delay-weight plasticity-based supervised learning in optical spiking neural networks. Photonics Research.DOI
978. Tao Zhang, Zhiguo Hu, Yifan Li, Yachao Zhang, Qian Feng, Jing Ning, Chunfu Zhang, Jincheng Zhang, Yue Hao (2021). Investigation on the β-Ga2O3 deposited on off-angled sapphire (0001) substrates. Journal of Luminescence.DOI
979. Jie Hou, Rui Guo, Jie Su, Yawei Du, Zhenhua Lin, Jincheng Zhang, Yue Hao, Jingjing Chang (2021). Multilevel oxygen-vacancy conductive filaments in β-Ga 2 O 3 based resistive random access memory. Physical Chemistry Chemical Physics.DOI
980. Fuchao He, Yu Qin, Yifei Wang, Zhenhua Lin, Jie Su, Jincheng Zhang, Jingjing Chang, Yue Hao (2021). Aqueous Solution Derived Amorphous Indium Doped Gallium Oxide Thin-Film Transistors. IEEE Journal of the Electron Devices Society.DOI
981. Yue Hao, Gui‐Lu Long (2021). Quantum information and quantum computing. Fundamental Research.DOI
982. Weihang Zhang, Liyu Fu, Xi Liu, Jincheng Zhang, Shenglei Zhao, Zhizhe Wang, Yue Hao (2021). In-situ-SiN/AlN/Al0.05Ga0.95N High Electron-Mobility Transistors on Si-Substrate Using Al2O3/SiO2 Passivation. IEEE Journal of the Electron Devices Society.DOI
983. Jinbang Ma, Yachao Zhang, Yifan Li, Yixin Yao, Tao Zhang, Qian Feng, Zhen Bi, Lansheng Feng, Jincheng Zhang, Yue Hao (2021). Investigation on the relationship between dislocation type and the annihilation mechanism of GaN-on-Si. Materials Letters.DOI
984. Jielong Liu, Minhan Mi, Jiejie Zhu, Siyu Liu, Pengfei Wang, Yuwei Zhou, Qing Zhu, Mei Wu, Hao Lu, Bin Hou, Hong Wang, Xiaolong Cai, Yu Zhang, Xiangyang Duan, Ling Yang, Xiaohua Ma, Yue Hao (2021). Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si3N4 Bilayer Passivation. IEEE Transactions on Electron Devices.DOI
985. Zhiwen Liang, Hanghai Du, Ye Yuan, Qi Wang, Junjie Kang, Hong Yu Zhou, Jincheng Zhang, Yue Hao, Xinqiang Wang, Guoyi Zhang (2021). Ultra-thin AlGaN/GaN HFET with a high breakdown voltage on sapphire substrates. Applied Physics Letters.DOI
986. Yu‐Shan Lin, Yilin Chen, Ting‐Chang Chang, Fong‐Min Ciou, Qing Zhu, Mao‐Chou Tai, Wan-Ching Su, Ting-Tzu Kuo, Kuan-Hsu Chen, Jiejie Zhu, Minhan Mi, Xiaohua Ma, Yue Hao (2021). Investigating two-stage degradation of threshold voltage induced by off-state stress in AlGaN/GaN HEMTs. Semiconductor Science and Technology.DOI
987. Menghua Wang, Mingchao Yang, Weihua Liu, Songquan Yang, Chuanyu Han, Li Geng, Yue Hao (2021). Toward High Performance 4H-SiC MOSFETs Using Low Temperature Annealing Process with Supercritical Fluid. Technical digest - International Electron Devices Meeting/Technical digest.DOI
988. Hao Lu, Bin Hou, Ling Yang, Teng Huo, Zeyan Si, Meng Zhang, Mei Wu, Xiaohua Ma, Yue Hao (2021). Improved Ohmic Contact Performance on Undoped AlGaN/GaN HEMTs Using by Ternary Alloy Predeposition. China International Forum on Solid State Lighting & International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS).DOI
989. Xuerui Niu, Bin Hou, Ling Yang, Meng Zhang, Xinchuang Zhang, Hao Lu, Fuchun Jia, Jiale Du, Mei Wu, Fang Song, Chong Wang, Xiaohua Ma, Yue Hao (2021). Analytical Model on the Threshold Voltage of p-Channel Heterostructure Field-Effect Transistors on a GaN-Based Complementary Circuit Platform. IEEE Transactions on Electron Devices.DOI
990. Jiabo Chen, Zhihong Liu, Haiyong Wang, Yue Jing He, Xiaoxiao Zhu, Jing Ning, Jincheng Zhang, Yue Hao (2021). A GaN Complementary FET Inverter With Excellent Noise Margins Monolithically Integrated With Power Gate-Injection HEMTs. IEEE Transactions on Electron Devices.DOI
991. Tao Zhang, Qian Cheng, Zhiguo Hu, Yifan Li, Jinbang Ma, Yixin Yao, Yan Zuo, Qian Feng, Yachao Zhang, Hong Yu Zhou, Jing Ning, Chunfu Zhang, Jincheng Zhang, Yue Hao (2021). Low temperature deposition of Ga2O3 films on sapphire and epi-GaN substrates. Materials Letters.DOI
992. Kai Liu, Chong Wang, Xuefeng Zheng, Xiaohua Ma, Yunlong He, Ang Li, Yaopeng Zhao, Wei Mao, Yue Hao (2021). Effect of post anode annealing on W/Au and Ni/Au multi-channel AlGaN/GaN Schottky diode. Superlattices and Microstructures.DOI
993. Hao Lu, Zeyan Si, Bin Hou, Ling Yang, Xiaohua Ma, Yue Hao (2021). Low Contact Resistance CMOS-Compatible RF GaN-on-Silicon HEMTs. IEEE Workshop on Wide Bandgap Power Devices and Applications.DOI
994. Fuchun Jia, Xiaohua Ma, Ling Yang, Bin Hou, Meng Zhang, Qing Zhu, Mei Wu, Minhan Mi, Jiejie Zhu, Siyu Liu, Yue Hao (2021). The Influence of Fe Doping Tail in Unintentionally Doped GaN Layer on DC and RF Performance of AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices.DOI
995. Jiabo Chen, Zhihong Liu, Haiyong Wang, Xiaoxiao Zhu, Dan Zhu, Tao Zhang, Xiaoling Duan, Jing Ning, Jincheng Zhang, Yue Hao (2021). Investigation on the interface trap characteristics in a p-channel GaN MOSFET through temperature-dependent subthreshold slope analysis. Journal of Physics D Applied Physics.DOI
996. Wenhui Xu, Tiangui You, Yibo Wang, Zhenghao Shen, Kang Liu, Lianghui Zhang, Huarui Sun, Ruijie Qian, Zhenghua An, Fengwen Mu, Tadatomo Suga, Genquan Han, Xin Ou, Yue Hao, Xi Wang (2021). Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline β-Ga2O3 thin film on SiC. Fundamental Research.DOI
997. Wen-Lu Yang, Lin‐An Yang, Xiaoyu Zhang, Yang Li, Xiaohua Ma, Yue Hao (2021). Room temperature asymmetric negative differential resistance characteristics of AlGaN/GaN resonant tunneling diodes grown by metal-organic chemical vapor deposition. Solid-State Electronics.DOI
998. Xiaoyu Zhang, Hu Lei, Lin Du, Siwei Ji, Xiaotong Li, Yang Li, Lin‐An Yang, Yue Hao (2021). Optimized Design of Ni/GaN Schottky Barrier IMPATT Diode With n-type GaN Deep Level Defects. Cross Strait Radio Science and Wireless Technology Conference (CSRSWTC).DOI
999. Xiaomeng Fan, Shengrui Xu, Hongchang Tao, Ruoshi Peng, Jinjuan Du, Ying Zhao, Jinfeng Zhang, Jincheng Zhang, Yue Hao (2021). Improved Performance of GaN-Based Ultraviolet LEDs with the Stair-like Si-Doping n-GaN Structure. Crystals.DOI
1000. Sheng Hao Wu, Minhan Mi, Meng Zhang, Ling Yang, Bin Hou, Xiaohua Ma, Yue Hao (2021). A High RF-Performance AlGaN/GaN HEMT With Ultrathin Barrier and Stressor In Situ SiN. IEEE Transactions on Electron Devices.DOI
1001. Hao Lu, Xiaohua Ma, Bin Hou, Ling Yang, Meng Zhang, Mei Wu, Zeyan Si, Xinchuang Zhang, Xuerui Niu, Yue Hao (2021). Improved RF Power Performance of AlGaN/GaN HEMT Using by Ti/Au/Al/Ni/Au Shallow Trench Etching Ohmic Contact. IEEE Transactions on Electron Devices.DOI
1002. Jinbang Ma, Yachao Zhang, Tao Zhang, Yifan Li, Yixin Yao, Qian Feng, Zhen Bi, Jincheng Zhang, Yue Hao (2021). Effects of the pretreatment of Si substrate before the pre-deposition of Al on GaN-on-Si. Superlattices and Microstructures.DOI
1003. Tian Zhu, Xuefeng Zheng, Jia Wang, Mao-Sen Wang, Kai Chen, Xiaohu Wang, Ming Du, Peijun Ma, Hao Zhang, Ling Lv, Yanrong Cao, Xiaohua Ma, Yue Hao (2021). Combined Effects of Proton Irradiation and Forward Gate-Bias Stress on the Interface Traps in AlGaN/GaN Heterostructure. IEEE Transactions on Nuclear Science.DOI
1004. Wenqiang Xu, Shengrui Xu, Hongchang Tao, Yuan Gao, Xiaomeng Fan, Jinjuan Du, Lixia Ai, Liping Peng, Jinfeng Zhang, Jincheng Zhang, Yue Hao (2021). High quality GaN grown on polycrystalline diamond substrates with h-BN insertion layers by MOCVD. Materials Letters.DOI
1005. Jiabo Chen, Zhihong Liu, Haiyong Wang, Xiufeng Song, Zhaoke Bian, Xiaoling Duan, Shenglei Zhao, Jing Ning, Jincheng Zhang, Yue Hao (2021). Determination of the leakage current transport mechanisms in quasi-vertical GaN–on–Si Schottky barrier diodes (SBDs) at low and high reverse biases and varied temperatures. Applied Physics Express.DOI
1006. Jielong Liu, Yuwei Zhou, Minhan Mi, Jiejie Zhu, Siyu Liu, Qing Zhu, Pengfei Wang, Hong Wang, Xiaohua Ma, Yue Hao (2021). Temperature-Dependent Current Collapse and Gate Leakage in AlGaN/GaN HEMTs With Si-rich SiN Interlayer. IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).DOI
1007. Haiyong Wang, Wei Mao, Jingtao Luo, Cui Yang, Jiabo Chen, Shenglei Zhao, Ming Du, Xuefeng Zheng, Chong Wang, Chunfu Zhang, Jincheng Zhang, Yue Hao (2021). Experimental Demonstration of Monolithic Bidirectional Switch With Anti-Paralleled Reverse Blocking p-GaN HEMTs. IEEE Electron Device Letters.DOI
1008. Yingzhe Wang, Xuefeng Zheng, Ling Lv, Yanrong Cao, Xiao-Hu Wang, Wei Mao, Ming Du, Peipei Hu, Peixian Li, Jie Liu, Xiaohua Ma, Li-Xin Guo, Yue Hao (2021). Degradation mechanisms of InGaN/GaN UVA LEDs under swift heavy ion irradiation: role of defects. Semiconductor Science and Technology.DOI
1009. Huake Su, Shengrui Xu, Hongchang Tao, Xiaomeng Fan, Jinjuan Du, Ruoshi Peng, Ying Zhao, Lixia Ai, Haoyang Wu, Jincheng Zhang, Peixian Li, Yue Hao (2021). Improving the Current Spreading by Fe Doping in n-GaN Layer for GaN-Based Ultraviolet Light-Emitting Diodes. IEEE Electron Device Letters.DOI
1010. Xuerui Niu, Xiaohua Ma, Bin Hou, Ling Yang, Yu‐Shan Lin, Qing Zhu, Fong‐Min Ciou, Kuan-Hsu Chen, Yilin Chen, Jiale Du, Mei Wu, Meng Zhang, Chong Wang, Ting‐Chang Chang, Yue Hao (2021). Electrical Degradation of In Situ SiN/AlGaN/GaN MIS-HEMTs Caused by Dehydrogenation and Trap Effect Under Hot Carrier Stress. IEEE Transactions on Electron Devices.DOI
1011. Yu Xu, Chunfu Zhang, Pengru Yan, Zhe Li, Yachao Zhang, Dazheng Chen, Weidong Zhu, Qian Feng, Shengrui Xu, Jincheng Zhang, Yue Hao (2021). β-Ga2O3 epitaxial growth on Fe-GaN template by non-vacuum mist CVD and its application in Schottky barrier diodes. AIP Advances.DOI
1012. Kai Liu, Chong Wang, Xuefeng Zheng, Xiaohua Ma, Zeyang Huang, Yunlong He, Ang Li, Yaopeng Zhao, Wei Mao, Yue Hao (2021). 490 mA/mm drain current and 1.9 V threshold voltage enhancement-mode p-GaN HEMTs and high-temperature characteristics. Solid-State Electronics.DOI
1013. Ang Li, Chong Wang, Yunlong He, Xuefeng Zheng, Xiaohua Ma, Yaopeng Zhao, Kai Liu, Yue Hao (2021). GaN-based super-lattice Schottky barrier diode with low forward voltage of 0.81V. Superlattices and Microstructures.DOI
1014. Hao Lu, Bin Hou, Ling Yang, Xuerui Niu, Zeyan Si, Meng Zhang, Mei Wu, Minhan Mi, Qing Zhu, Kai Cheng, Xiaohua Ma, Yue Hao (2021). AlN/GaN/InGaN Coupling-Channel HEMTs for Improved g m and Gain Linearity. IEEE Transactions on Electron Devices.DOI
1015. Hongchang Tao, Shengrui Xu, Xiaomeng Fan, Jincheng Zhang, Yue Hao (2021). Greatly Enhanced Wall-Plug Efficiency of N-polar AlGaN-Based Deep Ultraviolet Light-Emitting Diodes. IEEE photonics journal.DOI
1016. Shuang Liu, Weihang Zhang, Jincheng Zhang, Xiufeng Song, Yinhe Wu, Dazheng Chen, Shengrui Xu, Shenglei Zhao, Yue Hao (2021). AlN/GaN Superlattice Channel HEMTs on Silicon Substrate. IEEE Transactions on Electron Devices.DOI
1017. Tao Zhang, Yi Wang, Yanni Zhang, Yueguang Lv, Jing Ning, Yachao Zhang, Hong Yu Zhou, Xiaoling Duan, Jincheng Zhang, Yue Hao (2021). Comprehensive Annealing Effects on AlGaN/GaN Schottky Barrier Diodes With Different Work-Function Metals. IEEE Transactions on Electron Devices.DOI
1018. Weihang Zhang, Xi Liu, Liyu Fu, Ren Huang, Shenglei Zhao, Jincheng Zhang, Jinfeng Zhang, Yue Hao (2021). Investigation of normally-off GaN-based p-channel and n-channel heterojunction field-effect transistors for monolithic integration. Results in Physics.DOI
1019. Tingting Wang, Xiao Wang, Yue Jing He, Mao Jia, Qiong Ye, Yang Xu, Yihan Zhang, Yang Li, Lihua Bai, Xiaohua Ma, Yue Hao, Jin‐Ping Ao (2021). Recessed AlGaN/GaN Schottky Barrier Diodes With TiN and NiN Dual Anodes. IEEE Transactions on Electron Devices.DOI
1020. Xing Chen, Dandan Lv, Jinfeng Zhang, Zeyanz Ren, Chong Wang, Yang Wu, Dong Wang, Yingyi Lei, Wenxiu Zeng, Jincheng Zhang, Yue Hao (2021). Modelling of multiple-channel influence on GaN based HEMTs. IEEE Electron Devices Technology & Manufacturing Conference (EDTM).DOI
1021. Ying Zhao, Shengrui Xu, Ruoshi Peng, Jinjuan Du, Xiaomeng Fan, Hongchang Tao, Jincheng Zhang, Jinfeng Zhang, Lansheng Feng, Yue Hao (2021). Performance enhancement of InGaN/GaN MQWs grown on SiC substrate with sputtered AlN nucleation layer. Materials Letters.DOI
1022. Pengfei Wang, Xiaohua Ma, Minhan Mi, Meng Zhang, Jiejie Zhu, Yuwei Zhou, Sheng Hao Wu, Jielong Liu, Ling Yang, Bin Hou, Yue Hao (2021). Influence of Fin-Like Configuration Parameters on the Linearity of AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices.DOI
1023. Xing Chen, Dandan Lv, Jinfeng Zhang, Hong Yu Zhou, Zeyang Ren, Chong Wang, Yong Jian Wu, Dong Wang, Hong Zhang, Yingyi Lei, Jincheng Zhang, Yue Hao (2021). Model of Electron Population and Energy Band Diagram of Multiple-Channel GaN Heterostructures. IEEE Transactions on Electron Devices.DOI
1024. Yue Hao, Xiaohua Ma, Minhan Mi, Lin‐An Yang (2021). Research on GaN-Based RF Devices: High-Frequency Gate Structure Design, Submicrometer-Length Gate Fabrication, Suppressed SCE, Low Parasitic Resistance, Minimized Current Collapse, and Lower Gate Leakage. IEEE Microwave Magazine.DOI
1025. Hao Zou, Lin‐An Yang, Xiaohua Ma, Yue Hao (2021). The dual-suppression of peak electric field in AlGaN/GaN HEMT with sandwich structure. Superlattices and Microstructures.DOI
1026. Menghua Wang, Mingchao Yang, Weihua Liu, Jinwei Qi, Songquan Yang, Chuanyu Han, Li Geng, Yue Hao (2021). A Highly Efficient Annealing Process With Supercritical N2O at 120 °C for SiO2/4H–SiC Interface. IEEE Transactions on Electron Devices.DOI
1027. Jinxing Wu, Peixian Li, Xiaowei Zhou, Jiangtao Wu, Yue Hao (2021). Increasing the Carrier Injection Efficiency of GaN-Based Ultraviolet Light-Emitting Diodes by Double Al Composition Gradient Last Quantum Barrier and p-Type Hole Supply Layer. IEEE photonics journal.DOI
1028. Tao Zhang, Yueguang Lv, Ruohan Li, Yanni Zhang, Yachao Zhang, Xiangdong Li, Jincheng Zhang, Yue Hao (2021). Current-Collapse Suppression of High-Performance Lateral AlGaN/GaN Schottky Barrier Diodes by a Thick GaN Cap Layer. IEEE Electron Device Letters.DOI
1029. Kai Liu, Chong Wang, Xuefeng Zheng, Xiaohua Ma, Yaopeng Zhao, Ang Li, Yunlong He, Wei Mao, Yue Hao (2021). Improving the Performance of Deep Recessed Anode AlGaN/GaN Schottky Barrier Diode by Post Etching Treatment. physica status solidi (a).DOI
1030. Tao Zhang, Yanni Zhang, Jincheng Zhang, Xiangdong Li, Yueguang Lv, Yue Hao (2021). Current Transport Mechanism of High-Performance Novel GaN MIS Diode. IEEE Electron Device Letters.DOI
1031. HePeng Zhang, JunShuai Xue, YongRui Fu, LanXing Li, ZhiPeng Sun, JiaJia Yao, Fang Liu, Kai Zhang, Xiaohua Ma, Jincheng Zhang, Yue Hao (2021). Demonstration of highly repeatable room temperature negative differential resistance in large area AlN/GaN double-barrier resonant tunneling diodes. Journal of Applied Physics.DOI
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1033. Yibo Wang, Hehe Gong, Xiaole Jia, Genquan Han, Jiandong Ye, Yan Liu, Haodong Hu, Xin Ou, Xiaohua Ma, Yue Hao (2021). First Demonstration of RESURF and Superjunction ß- Ga2O3 MOSFETs with p-NiO/n- Ga2O3 Junctions. Technical digest - International Electron Devices Meeting/Technical digest.DOI
1034. Yue Hao, Huaqiang Wu, Yuchao Yang, Qi Liu, Xiao Gong, Genquan Han, Ming Li (2021). Preface to the Special Issue on Beyond Moore: Three-Dimensional (3D) Heterogeneous Integration. Journal of Semiconductors.DOI
1035. Cizhe Fang, Qiyu Yang, Qingchen Yuan, Xuetao Gan, Jianlin Zhao, Yao Shao, Yan Liu, Genquan Han, Yue Hao (2021). High-Q resonances governed by the quasi-bound states in the continuum in all-dielectric metasurfaces. Opto-Electronic Advances.DOI
1036. Yanghao Wang, Yuchao Yang, Yue Hao, Ru Huang (2021). Embracing the era of neuromorphic computing. Journal of Semiconductors.DOI
1037. Yue Hao, Huaqiang Wu, Yuchao Yang, Qi Liu, Xiao Nan Gong, Genquan Han, Ming Li (2021). Preface to the Special Issue on Beyond Moore: Resistive Switching Devices for Emerging Memory and Neuromorphic Computing. Journal of Semiconductors.DOI
1038. YaChao Zhang, Yifan Li, Zhizhe Wang, Rui Guo, Shengrui Xu, Chuanyang Liu, Shenglei Zhao, Jincheng Zhang, Yue Hao (2020). Investigation of β-Ga2O3 films and β-Ga2O3/GaN heterostructures grown by metal organic chemical vapor deposition. Science China Physics Mechanics and Astronomy.DOI
1039. Yaopeng Zhao, Chong Wang, Xue-Feng Zheng, Xiaohua Ma, Ang Li, Kai Liu, Yunlong He, Xiaoli Lu, Yue Hao (2020). Ferroelectric effect and equivalent polarization charge model of PbZr0.2Ti0.8O3 on AlGaN/GaN MIS-HEMT*. Chinese Physics B.DOI
1040. Hao Zou, Lin‐An Yang, Xiaohua Ma, Yue Hao (2020). Effects of notch structures on DC and RF performances of AlGaN/GaN high electron mobility transistors*. Chinese Physics B.DOI
1041. Yuanhao He, Wei Mao, Ming Du, Ziling Peng, Haiyong Wang, Xue-Feng Zheng, Chong Wang, Jincheng Zhang, Yue Hao (2020). Vertical polarization-induced doping InN/InGaN heterojunction tunnel FET with hetero T-shaped gate*. Chinese Physics B.DOI
1042. Zhong-Xu Wang, Lin Du, Jun-Wei Liu, Ying Wang, Yun Jiang, Si-Wei Ji, Shi-Wei Dong, Wei-Wei Chen, Xiao-Hong Tan, Jin-Long Li, Xiao-Jun Li, Sheng-Lei Zhao, Jin-Cheng Zhang, Yue Hao (2020). Breakdown voltage enhancement in GaN channel and AlGaN channel HEMTs using large gate metal height.DOI
1043. Qing Zhu, Xiaohua Ma, Yilin Chen, Bin Hou, Jiejie Zhu, Meng Zhang, Mei Wu, Ling Yang, Yue Hao (2020). Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs*. Chinese Physics B.DOI
1044. Si-Qin-Gao-Wa Bao, Jiejie Zhu, Xiaohua Ma, Bin Hou, Ling Yang, Lixiang Chen, Qing Zhu, Yue Hao (2020). Effects of Low-Damage Plasma Treatment on the Channel 2DEG and Device Characteristics of AlGaN/GaN HEMTs*. Chinese Physics Letters.DOI
1045. Minhan Mi, Sheng Hao Wu, Ling Yang, Yunlong He, Bin Hou, Meng Zhang, Lixin Guo, Xiaohua Ma, Yue Hao (2020). In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT*. Chinese Physics B.DOI
1046. Minhan Mi, Meng Zhang, Sheng Hao Wu, Ling Yang, Bin Hou, Yuwei Zhou, Lixin Guo, Xiaohua Ma, Yue Hao (2020). High performance InAlN/GaN high electron mobility transistors for low voltage applications*. Chinese Physics B.DOI
1047. Sheng Yao Hu, Ling Yang, Minhan Mi, Bin Hou, Sheng Liu, Meng Zhang, Mei Wu, Qing Zhu, Sheng Hao Wu, Yang Ming Lu, Jiejie Zhu, Xiaowei Zhou, Ling Lv, Xiaohua Ma, Yue Hao (2020). Trap analysis of composite 2D–3D channel in AlGaN/GaN/graded-AlGaN:Si/GaN:C multi-heterostructure at different temperatures*. Chinese Physics B.DOI
1048. Yaopeng Zhao, Chong Wang, Xue-Feng Zheng, Xiaohua Ma, Kai Liu, Ang Li, Yunlong He, Yue Hao (2020). Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO2 and Al2O3 gate insulators*. Chinese Physics B.DOI
1049. 荆思淇，马晓华，祝杰杰，张新创，刘思雨，朱青，郝跃 (2020). Interface and border trapping effects in normally-off Al2O3/AlGaN/GaN MOS-HEMTs with different post-etch surface treatments. Chinese Physics B.
1050. Zeyang Zhang, Feng-Qin He, Weidong Zhu, Dan-Dan Chen, Wenming Chai, Dazheng Chen, He Xi, Jin-Cheng Zhang, Chun-Fu Zhang, Yue Hao (2020). Suppressing intrinsic self-doping of CsPbIBr2 films for high-performance all-inorganic, carbon-based perovskite solar cells.DOI
1051. Long Zhou, Jie Su, Zhen-Hua Lin, Xing Guo, Jing Ma, Li-ping Feng, Jin-Cheng Zhang, Shen Wang, Sheng-Zhong Liu, Jing-Jing Chang, Yue Hao (2020). Deep‐Ultraviolet Photoactivation‐Assisted Contact Engineering Toward High‐Efficiency and Stable All‐Inorganic CsPbI 2 Br Perovskite Solar Cells. Solar RRL.DOI
1052. Weidong Zhu, Minyu Deng, Dan-Dan Chen, Dazheng Chen, He Xi, Jing-Jing Chang, Jin-Cheng Zhang, Chun-Fu Zhang, Yue Hao (2020). Sacrificial additive-assisted film growth endows self-powered CsPbBr3 photodetectors with ultra-low dark current and high sensitivity.DOI
1053. Weidong Zhu, Wenming Chai, Minyu Deng, Dan-Dan Chen, Dazheng Chen, Jin-Cheng Zhang, Chun-Fu Zhang, Yue Hao (2020). Flux-mediated growth strategy enables low-temperature fabrication of high-efficiency all-inorganic CsPbIBr2 perovskite solar cells.DOI
1054. Zhe Li, Chun-Fu Zhang, Yu Xu, Zhuangzhuang Hu, Weidong Zhu, Dazheng Chen, Q. Feng, Jin-Cheng Zhang, Yue Hao (2020). Improving the Production of High-performance β-Ga2O3 Based Solar-Blind Schottky Barrier Photodiode. Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.DOI
1055. Zhe Li, Yu Xu, Yao-Lin Cheng, Jia-Qi Zhang, Dazheng Chen, Danyang Yao, Q. Feng, Sheng-Rui Xu, Jin-Cheng Zhang, Chun-Fu Zhang, Yue Hao (2020). Low-temperature processed high-performance visible–transparent Ga2O3 solar blind ultraviolet photodetectors with the indium–tin–oxide electrode. Semiconductor Science and Technology.DOI
1056. Weidong Zhu, Wenming Chai, Dan-Dan Chen, He Xi, Dazheng Chen, Jing-Jing Chang, Jin-Cheng Zhang, Chun-Fu Zhang, Yue Hao (2020). Recycling of FTO/TiO2 Substrates: Route toward Simultaneously High-Performance and Cost-Efficient Carbon-Based, All-Inorganic CsPbIBr2 Solar Cells. ACS Applied Materials and Interfaces.DOI
1057. Yao-Lin Cheng, Yu Xu, Zhe Li, Jia-Qi Zhang, Dazheng Chen, Q. Feng, Sheng-Rui Xu, Hong Zhou, Jin-Cheng Zhang, Yue Hao, Chun-Fu Zhang (2020). Heteroepitaxial growth of α-Ga2O3 thin films on a-, c- and r-plane sapphire substrates by low-cost mist-CVD method.DOI
1058. Yuchen Liu, Yang Li, Lin‐An Yang, Yang Lu, Xiaohua Ma, Jin‐Ping Ao, Yue Hao (2020). Terahertz Monolithic Integrated Cavity Filter Based on Cyclic Etched SiC Via-Holes. IEEE Transactions on Electron Devices.DOI
1059. Haiyong Wang, Wei Mao, Shenglei Zhao, Ming Du, Yachao Zhang, Xuefeng Zheng, Chong Wang, Chunfu Zhang, Jincheng Zhang, Yue Hao (2020). 1.3 kV Reverse-Blocking AlGaN/GaN MISHEMT With Ultralow Turn-On Voltage 0.25 V. IEEE Journal of the Electron Devices Society.DOI
1060. Tao Zhang, Jincheng Zhang, Weihang Zhang, Yachao Zhang, Xiaoling Duan, Jing Ning, Yue Hao (2020). Investigation of an AlGaN-channel Schottky barrier diode on a silicon substrate with a molybdenum anode. Semiconductor Science and Technology.DOI
1061. Ling Yang, Mei Wu, Bin Hou, Minhan Mi, Meng Zhang, Qing Zhu, Yang Lu, Xiaowei Zhou, Ling Lv, Xiaohua Ma, Yue Hao (2020). Analysis of DC, Channel Temperature, and RF Performance of In Situ SiN/AlGaN-Sandwich-Barrier/GaN/Al₀.₀₅GaN HEMTs. IEEE Transactions on Electron Devices.DOI
1062. Jiabo Chen, Zhaoke Bian, Zhihong Liu, Dan Zhu, Xiaoling Duan, Yinhe Wu, Yanqing Jia, Jing Ning, Jincheng Zhang, Yue Hao (2020). Effects of thermal annealing on the electrical and structural properties of Mo/Au schottky contacts on n-GaN. Journal of Alloys and Compounds.DOI
1063. Ying Wang, Liuan Li, Lin‐An Yang, Jin‐Ping Ao, Yue Hao (2020). Study on Self-Parallel GaN-Based Terahertz Hetero-Structural Gunn Diode. Applied Sciences.DOI
1064. Depu Ma, Shengrui Xu, Hongchang Tao, Wen Li, Ruoshi Peng, Jinjuan Du, Xiaomeng Fan, Ying Zhao, Jincheng Zhang, Yue Hao (2020). Investigation of nitridation time on the quality of AlGaN/GaN heterojunction grown on AlN-sputtered sapphire substrate. Materials Letters.DOI
1065. Xuefeng Zheng, Guan-Jun Chen, Xiaohu Wang, Yingzhe Wang, Chong Wang, Wei Mao, Yang Lu, Bin Hou, Minhan Mi, Ling Lv, Yanrong Cao, Qing Zhu, Gang Guo, Peijun Ma, Xiaohua Ma, Yue Hao (2020). Proton irradiation impact on interface traps under Schottky contact in AlGaN/GaN heterostructure. AIP Advances.DOI
1066. Yachao Zhang, Yifan Li, Jia Wang, Yiming Shen, Lin Du, Yao Li, Zhizhe Wang, Shengrui Xu, Jincheng Zhang, Yue Hao (2020). High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage. Nanoscale Research Letters.DOI
1067. HePeng Zhang, JunShuai Xue, YongRui Fu, Mei Yang, YaChao Zhang, Xiaoling Duan, WeiTing Qiang, LanXing Li, ZhiPeng Sun, Xiaohua Ma, Jincheng Zhang, Yue Hao (2020). Study on the effects of growth rate on GaN films properties grown by plasma-assisted molecular beam epitaxy. Journal of Crystal Growth.DOI
1068. Xiao-Yu Zhang, Lin‐An Yang, Yao Ma, Yuchen Liu, Wen-Lu Yang, Xiaohua Ma, Yue Hao (2020). Noise characteristics of Ni/GaN Schottky barrier IMPATT diode based on polar- and nonpolar-oriented wurtzite GaN for terahertz application. Superlattices and Microstructures.DOI
1069. Ying Zhao, Shengrui Xu, Lansheng Feng, Zhiyu Lin, Peixian Li, Jincheng Zhang, Yue Hao (2020). The Yellow Luminescence Origin of N-Polar GaN Film Grown by Metal Organic Chemical Vapor Deposition. ECS Journal of Solid State Science and Technology.DOI
1070. Yingzhe Wang, Xuefeng Zheng, Jiaduo Zhu, Shengrui Xu, Xiaohua Ma, Jincheng Zhang, Yue Hao, Linlin Xu, Jiangnan Dai, Peixian Li (2020). Evolution of Defect in AlGaN-based Deep Ultraviolet Light Emitting Diodes During Electrical Stress. IEEE International Reliability Physics Symposium proceedings.DOI
1071. Yanni Zhang, Jincheng Zhang, Hong Yu Zhou, Tao Zhang, Haiyong Wang, Zhaoqing Feng, Yue Hao (2020). Leakage current mechanisms of groove-type tungsten-anode GaN SBDs with ultra low turn-ON voltage and low reverse current. Solid-State Electronics.DOI
1072. Jiejie Zhu, Yingcong Zhang, Xiaohua Ma, Siyu Liu, Siqi Jing, Qing Zhu, Minhan Mi, Bin Hou, Ling Yang, Michael J. Uren, Martin Kuball, Yue Hao (2020). Interface property and band offset investigation of GaN based MOS heterostructures with diffusion-controlled interface oxidation technique. Semiconductor Science and Technology.DOI
1073. Tian Zhu, Xue-Feng Zheng, Yanrong Cao, Chong Wang, Wei Mao, Yingzhe Wang, Minhan Mi, Mei Wu, Jianghui Mo, Xiaohua Ma, Yue Hao (2020). Study on the effect of diamond layer on the performance of double-channel AlGaN/GaN HEMTs. Semiconductor Science and Technology.DOI
1074. Ying Zhao, Shengrui Xu, Jincheng Zhang, Chunfu Zhang, Peixian Li, Zhiyu Lin, Yachao Zhang, Hong Yu Zhou, Zhan Wang, Ruoshi Peng, Xiaomeng Fan, Jinjuan Du, Yue Hao (2020). Optical properties evolution of GaN film grown via lateral epitaxial overgrowth. Applied Surface Science.DOI
1075. Yaopeng Zhao, Chong Wang, Xuefeng Zheng, Xiaohua Ma, Yunlong He, Kai Liu, Ang Li, Yue Peng, Chunfu Zhang, Yue Hao (2020). Comparative Study of Characteristics and Interface States with and without Post‐Gate‐Annealing Treatment for AlGaN/GaN‐Recessed Metal–Insulator–Semiconductor High Electron Mobility Transistors Using HfO2 Gate Insulator on Si Substrates. physica status solidi (a).DOI
1076. Yanli Wang, Peixian Li, Xinyu Zhang, Shengrui Xu, Xiaowei Zhou, Jinxing Wu, Wenkai Yue, Yue Hao (2020). Using a Multi-Layer Stacked AlGaN/GaN Structure to Improve the Current Spreading Performance of Ultraviolet Light-Emitting Diodes. Materials.DOI
1077. Ying Wang, Liuan Li, Jin‐Ping Ao, Yue Hao (2020). Physical-Based Simulation of the GaN-Based Grooved-Anode Planar Gunn Diode. Micromachines.DOI
1078. Zhongyang Li, Lin Du, Jianshe Lou, Yun Jiang, Kunshu Wang, Wei Wen, Zhizhe Wang, Shenglei Zhao, Jincheng Zhang, Yue Hao (2020). High‐Breakdown‐Voltage AlGaN Channel High‐Electron‐Mobility Transistors with Reduced Surface Field Technique. physica status solidi (a).DOI
1079. Bin Hou, Ling Yang, Minhan Mi, Meng Zhang, Chupeng Yi, Mei Wu, Qing Zhu, Yang Lu, Jiejie Zhu, Xiaowei Zhou, Ling Lv, Xiaohua Ma, Yue Hao (2020). High linearity and high power performance with barrier layer of sandwich structure and Al0.05GaN back barrier for X-band application. Journal of Physics D Applied Physics.DOI
1080. Qian Feng, Guangshuo Yan, Zhuangzhuang Hu, Zhaoqing Feng, Xusheng Tian, Dian Jiao, Wenxiang Mu, Zhitai Jia, Xiaozheng Lian, Zhanping Lai, Chunfu Zhang, Hong Yu Zhou, Jincheng Zhang, Yue Hao (2020). Forward Current Conduction Mechanism of Mechanically Exfoliated β -Ga 2 O 3 /GaN pn Heterojunction Diode. ECS Journal of Solid State Science and Technology.DOI
1081. Shuang Liu, Xiufeng Song, Jincheng Zhang, Shenglei Zhao, Jun Luo, Hong Zhang, Yachao Zhang, Weihang Zhang, Hong Yu Zhou, Zhihong Liu, Yue Hao (2020). Comprehensive Design of Device Parameters for GaN Vertical Trench MOSFETs. IEEE Access.DOI
1082. Yanni Zhang, Jincheng Zhang, Zhuangzhuang Hu, Zhaoqing Feng, HePeng Zhang, Shengrui Xu, Zhihong Liu, Hong Yu Zhou, Yue Hao (2020). Impact of Surface Treatments and Post-Deposition Annealing Upon Interfacial Property of ALD-Al₂O₃ on a-Plane GaN. IEEE Journal of the Electron Devices Society.DOI
1083. Ying Wang, Liuan Li, Chong Li, Jin‐Ping Ao, Xiao Wang, Yue Hao (2020). Thermal Analysis of AlGaN/GaN Hetero-Structural Gunn Diodes on Different Substrates Through Numerical Simulation. IEEE Journal of the Electron Devices Society.DOI
1084. Yachao Zhang, Zhizhe Wang, Shenglei Zhao, Shengrui Xu, Jincheng Zhang, Yue Hao (2020). Investigation of nitride lateral Schottky barrier diodes based on InGaN channel heterostructures. AIP Advances.DOI
1085. Zeyang Ren, Zhenfang Liang, Kai Su, Yufei Xing, Jinfeng Zhang, Jinfeng Zhang, Jincheng Zhang, Jincheng Zhang, Chunfu Zhang, Yue Hao (2020). Polycrystalline diamond normally-off MESFET passivated by a MoO3 layer. Results in Physics.DOI
1086. Kai Su, Qi He, Jinfeng Zhang, Zeyang Ren, Linyue Liu, Jincheng Zhang, Xiaoping Ouyang, Yue Hao (2020). Device performance of chemical vapor deposition monocrystal diamond radiation detectors correlated with the bulk diamond properties. Journal of Physics D Applied Physics.DOI
1087. Xing Guo, Jianhui Du, Zhenhua Lin, Jie Su, Liping Feng, Jincheng Zhang, Yue Hao, Jingjing Chang (2020). Enhanced efficiency and stability of planar perovskite solar cells using SnO2:InCl3 electron transport layer through synergetic doping and passivation approaches. Chemical Engineering Journal.DOI
1088. Hang Dong, Shangzheng Pang, Yu Xu, Zhe Li, Zeyang Zhang, Weidong Zhu, Dazheng Chen, He Xi, Zhenhua Lin, Jincheng Zhang, Yue Hao, Chunfu Zhang (2020). Ultrawide Band Gap Oxide Semiconductor-Triggered Performance Improvement of Perovskite Solar Cells via the Novel Ga2O3/SnO2 Composite Electron-Transporting Bilayer. ACS Applied Materials & Interfaces.DOI
1089. Xinyi Liu, Yan Liu, Cizhe Fang, Yan Huang, Yao Shao, Genquan Han, Yue Hao (2020). High-Q resonance in GeSn-based bound states in the continuum microcavity. Applied Optics.DOI
1090. Yibo Wang, Wenhui Xu, Genquan Han, Tiangui You, Fengwen Mu, Haodong Hu, Yan Liu, Xinchuang Zhang, Hao Huang, Tadatomo Suga, Xin Ou, Xiaohua Ma, Yue Hao (2020). Temperature-dependent characteristics of Schottky barrier diode on heterogeneous β-Ga 2 O 3 ( 2 ˉ 01 )-Al 2 O 3 -Si Substrate. Journal of Physics D Applied Physics.DOI
1091. Yuanjie Lv, Hongyu Liu, Yuangang Wang, Xingchang Fu, Chunlei Ma, Xubo Song, Xingye Zhou, Yanni Zhang, Pengfei Dong, Hanghai Du, Shixiong Liang, Tingting Han, Jincheng Zhang, Zhihong Feng, Hong Yu Zhou, Shujun Cai, Yue Hao (2020). Oxygen annealing impact on β -Ga2O3 MOSFETs: Improved pinch-off characteristic and output power density. Applied Physics Letters.DOI
1092. Bingjie Dang, Lan Ma, Longhao Yan, Saisai Wang, Keqin Liu, Liying Xu, Caidie Cheng, Momo Zhao, Yuchao Yang, Hong Wang, Yue Hao, Ru Huang (2020). Physically Transient Optic-Neural Synapse for Secure In-Sensor Computing. IEEE Electron Device Letters.DOI
1093. Xing Guo, Shuiying Xiang, Yan Qu, Ya Nan Han, Ai Jun Wen, Yue Hao (2020). Enhanced Prediction Performance of a Neuromorphic Reservoir Computing System Using a Semiconductor Nanolaser With Double Phase Conjugate Feedbacks. Journal of Lightwave Technology.DOI
1094. Chenbo Liu, Chunfu Zhang, Shangzheng Pang, Hang Dong, Zeyang Zhang, Dazheng Chen, Weidong Zhu, Jincheng Zhang, Yue Hao (2020). Enhancing the Performance of Two-Terminal All-Perovskite Tandem Solar Cells by the Optical Coupling Layer Beyond the Antireflection Function. IEEE photonics journal.DOI
1095. Peng Zhao, Jie Su, Zhenhua Lin, Jiaping Wang, Jincheng Zhang, Yue Hao, Xiaoping Ouyang, Jingjing Chang (2020). All‐Inorganic CsPbIxBr3−x Perovskite Solar Cells: Crystal Anisotropy Effect. Advanced Theory and Simulations.DOI
1096. Rui Guo, Jie Su, Pengliang Zhang, Fuchao He, Zhenhua Lin, Jincheng Zhang, Jingjing Chang, Yue Hao (2020). Modulation of the transport properties of metal/MoS 2 interfaces using BN-graphene lateral tunneling layers. Nanotechnology.DOI
1097. Siqing Zhang, Yan Liu, Jiuren Zhou, Meng Ma, Anyuan Gao, Binjie Zheng, Lingfei Li, Xin Su, Genquan Han, Jincheng Zhang, Yi Shi, Xiaomu Wang, Yue Hao (2020). Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure. Nanoscale Research Letters.DOI
1098. Yue Peng, Wenwu Xiao, Genquan Han, Yan Liu, Fenning Liu, Chen Liu, Yichun Zhou, Nan Yang, Ni Zhong, Chun‐Gang Duan, Yue Hao (2020). Memory Behavior of an Al2O3 Gate Dielectric Non-Volatile Field-Effect Transistor. IEEE Electron Device Letters.DOI
1099. Peng Zhao, Jie Su, Zhenhua Lin, Jiaping Wang, Jincheng Zhang, Yue Hao, Xiaoping Ouyang, Jingjing Chang (2020). The crystal anisotropy effect of MAPbI3 perovskite on optoelectronic devices. Materials Today Energy.DOI
1100. Weidong Zhu, Minyu Deng, Dandan Chen, Zeyang Zhang, Wenming Chai, Dazheng Chen, He Xi, Jincheng Zhang, Chunfu Zhang, Yue Hao (2020). Dual-Phase CsPbCl3–Cs4PbCl6 Perovskite Films for Self-Powered, Visible-Blind UV Photodetectors with Fast Response. ACS Applied Materials & Interfaces.DOI
1101. Yanni Zhang, Jincheng Zhang, Zhaoqing Feng, Zhuangzhuang Hu, Jiabo Chen, Kui Dang, Qinglong Yan, Pengfei Dong, Hong Yu Zhou, Yue Hao (2020). Impact of Implanted Edge Termination on Vertical β-Ga2O3 Schottky Barrier Diodes Under OFF-State Stressing. IEEE Transactions on Electron Devices.DOI
1102. Yue Peng, Genquan Han, Fenning Liu, Wenwu Xiao, Yan Liu, Ni Zhong, Chun‐Gang Duan, Ze Kun Feng, Hong Dong, Yue Hao (2020). Ferroelectric-like Behavior Originating from Oxygen Vacancy Dipoles in Amorphous Film for Non-volatile Memory. Nanoscale Research Letters.DOI
1103. Fuchao He, Yu Qin, Liaojun Wan, Jie Su, Zhenhua Lin, Jincheng Zhang, Jingjing Chang, Jishan Wu, Yue Hao (2020). Metal oxide heterojunctions for high performance solution grown oxide thin film transistors. Applied Surface Science.DOI
1104. Jian He, Jie Su, Zhijun Ning, Jing Ma, Long Zhou, Zhenhua Lin, Jincheng Zhang, Shengzhong Frank Liu, Jingjing Chang, Yue Hao (2020). Improved Interface Contact for Highly Stable All-Inorganic CsPbI2Br Planar Perovskite Solar Cells. ACS Applied Energy Materials.DOI
1105. Shuiying Xiang, Yanan Han, Xingxing Guo, Aijun Wen, Genquan Han, Yue Hao (2020). Real-time optical spike-timing dependent plasticity in a single VCSEL with dual-polarized pulsed optical injection. Science China Information Sciences.DOI
1106. Zeyang Ren, Dandan Lv, Jiamin Xu, Kai Su, Jinfeng Zhang, Dong Wang, Yong Jian Wu, Jincheng Zhang, Yue Hao (2020). Performance of H-diamond MOSFETs with high temperature ALD grown HfO2 dielectric. Diamond and Related Materials.DOI
1107. Yibo Wang, Wenhui Xu, Tiangui You, Fengwen Mu, Haodong Hu, Yan Liu, Hao Huang, Tadatomo Suga, Genquan Han, Xin Ou, Yue Hao (2020). β-Ga2O3 MOSFETs on the Si substrate fabricated by the ion-cutting process. Science China Physics Mechanics and Astronomy.DOI
1108. Wenming Chai, Weidong Zhu, Dandan Chen, Dazheng Chen, He Xi, Jingjing Chang, Jincheng Zhang, Chunfu Zhang, Yue Hao (2020). Combustion-processed NiO/ALD TiO2 bilayer as a novel low-temperature electron transporting material for efficient all-inorganic CsPbIBr2 solar cell. Solar Energy.DOI
1109. Bingjuan Zhang, Jie Su, Xing Guo, Long Zhou, Zhenhua Lin, Liping Feng, Jincheng Zhang, Jingjing Chang, Yue Hao (2020). NiO/Perovskite Heterojunction Contact Engineering for Highly Efficient and Stable Perovskite Solar Cells. Advanced Science.DOI
1110. Weidong Zhu, Zeyang Zhang, Dandan Chen, Wenming Chai, Dazheng Chen, Jincheng Zhang, Chunfu Zhang, Yue Hao (2020). Interfacial Voids Trigger Carbon-Based, All-Inorganic CsPbIBr2 Perovskite Solar Cells with Photovoltage Exceeding 1.33 V. Nano-Micro Letters.DOI
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1112. Kai Su, Zeyang Ren, Jinfeng Zhang, Linyue Liu, Jincheng Zhang, Yachao Zhang, Qi He, Chunfu Zhang, Xiaoping Ouyang, Yue Hao (2020). High performance hydrogen/oxygen terminated CVD single crystal diamond radiation detector. Applied Physics Letters.DOI
1113. Rui Guo, Jie Su, Haidong Yuan, P. Zhang, Zhenhua Lin, J. Zhang, Jingjing Chang, Yue Hao (2020). Surface functionalization modulates the structural and optoelectronic properties of two-dimensional Ga2O3. Materials Today Physics.DOI
1114. Saisai Wang, Bingjie Dang, Jing Wei Sun, Fang Song, Momo Zhao, Mei Yang, Xiaohua Ma, Hong Wang, Yue Hao (2020). Physically Transient Resistive Memory With Programmable Switching Behaviors in MgO-Mo Based Devices. IEEE Electron Device Letters.DOI
1115. Aixue Su, Chunfu Zhang, Dazheng Chen, Hang Dong, Shangzheng Pang, Weidong Zhu, He Xi, Gang Lü, Jincheng Zhang, Yue Hao (2020). Improving electron extraction ability and suppressing recombination of planar perovskite solar cells with the triple cascade electron transporting layer. Solar Energy Materials and Solar Cells.DOI
1116. Zhaoqing Feng, Xusheng Tian, Zhe Li, Zhuangzhuang Hu, Yanni Zhang, Xuanwu Kang, Jing Ning, Yachao Zhang, Chunfu Zhang, Qian Feng, Hong Yu Zhou, Jincheng Zhang, Yue Hao (2020). Normally-Off-$\beta$ -Ga2O3 Power MOSFET With Ferroelectric Charge Storage Gate Stack Structure. IEEE Electron Device Letters.DOI
1117. Shuiying Xiang, Yanan Han, Haoning Wang, Aijun Wen, Yue Hao (2020). Zero-lag chaos synchronization properties in a hierarchical tree-type network consisting of mutually coupled semiconductor lasers. Nonlinear Dynamics.DOI
1118. Tao Zhang, Yifan Li, Yachao Zhang, Qian Feng, Jing Ning, Chunfu Zhang, Jincheng Zhang, Yue Hao (2020). Effect of Temperature on the Structural and Optical Properties of Ga 2 O 3 Thin Films Grown on m-plane Sapphire Substrates by Low-Pressure MOCVD. ECS Journal of Solid State Science and Technology.DOI
1119. Zeyang Ren, Dandan Lv, Jiamin Xu, Jinfeng Zhang, Jincheng Zhang, Kai Su, Chunfu Zhang, Yue Hao (2020). High temperature (300 °C) ALD grown Al2O3 on hydrogen terminated diamond: Band offset and electrical properties of the MOSFETs. Applied Physics Letters.DOI
1120. Dazheng Chen, Gang Fan, Weidong Zhu, Haifeng Yang, He Xi, Fengqing He, Zhenhua Lin, Jincheng Zhang, Chunfu Zhang, Yue Hao (2020). Highly efficient bifacial CsPbIBr 2 solar cells with a TeO 2 /Ag transparent electrode and unsymmetrical carrier transport behavior. Dalton Transactions.DOI
1121. Kai Su, Zeyang Ren, Yue Peng, Jinfeng Zhang, Jincheng Zhang, Yachao Zhang, Qi He, Chunfu Zhang, Yue Hao (2020). Normally-Off Hydrogen-Terminated Diamond Field Effect Transistor With Ferroelectric HfZrOx/Al2O3Gate Dielectrics. IEEE Access.DOI
1122. Zeyang Ren, Qi He, Jiamin Xu, Guansheng Yuan, Jinfeng Zhang, Jincheng Zhang, Kai Su, Yue Hao (2020). Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al 2 O 3 Gate Dielectric. IEEE Access.DOI
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1220. Meng Zhang, Xiaohua Ma, Minhan Mi, Ling Yang, Sheng Hao Wu, Bin Hou, Qing Zhu, Hengshuang Zhang, Mei Wu, Yue Hao (2019). Influence of fin width and gate structure on the performance of AlGaN/GaN fin‐shaped HEMTs. International Journal of Numerical Modelling Electronic Networks Devices and Fields.DOI
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1226. Ruoshi Peng, Yue Hao, Xijun Meng, Shengrui Xu, Jincheng Zhang, Peixian Li, Jun Huang, Jinjuan Du, Ying Zhao, Xiaomeng Fan (2019). Study on Dislocation Annihilation Mechanism of the High-Quality GaN Grown on Sputtered AlN/PSS and Its Application in Green Light-Emitting Diodes. IEEE Transactions on Electron Devices.DOI
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1233. Zi Wei Song, Shuiying Xiang, Zhen Xing Ren, Su Hong Wang, Ai Jun Wen, Yue Hao (2019). Photonic spiking neural network based on excitable VCSELs-SA for sound azimuth detection. Optics Express.DOI
1234. Shangzheng Pang, Chunfu Zhang, Hairong Zhang, Hang Dong, Dazheng Chen, Weidong Zhu, He Xi, Jingjing Chang, Zhenhua Lin, Jincheng Zhang, Yue Hao (2019). Boosting performance of perovskite solar cells with Graphene quantum dots decorated SnO2 electron transport layers. Applied Surface Science.DOI
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1237. Yu Xu, Chunfu Zhang, Yaolin Cheng, Zhe Li, Yanan Cheng, Qian Feng, Dazheng Chen, Jincheng Zhang, Yue Hao (2019). Influence of Carrier Gases on the Quality of Epitaxial Corundum-Structured α-Ga2O3 Films Grown by Mist Chemical Vapor Deposition Method. Materials.DOI
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1245. Jing Ma, Zhenhua Lin, Xing Guo, Jian He, Zhaosheng Hu, Jie Su, Jincheng Zhang, Jingjing Chang, Yue Hao (2019). Low temperature ZnO/TiOx electron-transport layer processed from aqueous solution for highly efficient and stable planar perovskite solar cells. Materials Today Energy.DOI
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1254. Xing Guo, Zhenhua Lin, Jing Ma, Zhaosheng Hu, Jie Su, Chunfu Zhang, Jincheng Zhang, Jingjing Chang, Yue Hao (2019). Low temperature combustion synthesized indium oxide electron transport layer for high performance and stable perovskite solar cells. Journal of Power Sources.DOI
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1270. Chun-Chu Lin, Po‐Hsun Chen, Min-Chen Chen, Ting‐Chang Chang, Chih‐Yang Lin, Hao-Xuan Zheng, Chun-Kuei Chen, Wei‐Chen Huang, Wen‐Chung Chen, Hui‐Chun Huang, Tsung‐Ming Tsai, Xiaohua Ma, Yue Hao, Simon M. Sze (2019). Investigating Material Changes at Different Gadolinium Doping Power Levels in Indium-Tin Oxide Intended for Use as an Insulator in Resistive Switching Memory. IEEE Transactions on Electron Devices.DOI
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1273. Zhenhua Lin, Jia‐wen Zhou, Long Zhou, Kaixuan Wang, Wenqiang Li, Jie Su, Yue Hao, Yuan Li, Jingjing Chang (2019). Simultaneously enhanced performance and stability of inverted perovskite solar cells via a rational design of hole transport layer. Organic Electronics.DOI
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1282. Weidong Zhu, Zeyang Zhang, Wenming Chai, Qianni Zhang, Dazheng Chen, Zhenhua Lin, Jingjing Chang, Jincheng Zhang, Chunfu Zhang, Yue Hao (2019). Band Alignment Engineering Towards High Efficiency Carbon‐Based Inorganic Planar CsPbIBr2 Perovskite Solar Cells. ChemSusChem.DOI
1283. Yang Wang, Shuiying Xiang, Bo Wang, Xingyu Cao, Aijun Wen, Yue Hao (2019). Time-delay signature concealment and physical random bits generation in mutually coupled semiconductor lasers with FBG filtered injection. Optics Express.DOI
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1285. Hongjuan Wang, Genquan Han, Xiangwei Jiang, Yan Liu, Jincheng Zhang, Yue Hao (2019). Improved Performance in GeSn/SiGeSn TFET by Hetero-Line Architecture With Staggered Tunneling Junction. IEEE Transactions on Electron Devices.DOI
1286. Jie Su, Jian He, Junjing Zhang, Zhenhua Lin, Jingjing Chang, Jincheng Zhang, Yue Hao (2019). Unusual properties and potential applications of strain BN-MS2 (M = Mo, W) heterostructures. Scientific Reports.DOI
1287. Zhao Zhang, Jie Su, Jie Hou, Zhenhua Lin, Zhaosheng Hu, Jingjing Chang, Jincheng Zhang, Yue Hao (2019). Potential Applications of Halide Double Perovskite Cs2AgInX6 (X = Cl, Br) in Flexible Optoelectronics: Unusual Effects of Uniaxial Strains. The Journal of Physical Chemistry Letters.DOI
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1290. Yan Huang, Xinyi Liu, Yan Liu, Yao Shao, Siqing Zhang, Cizhe Fang, Genquan Han, Jincheng Zhang, Yue Hao (2019). Nanostructured multiple-layer black phosphorus photodetector based on localized surface plasmon resonance. Optical Materials Express.DOI
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1293. Shaoxi Wang, Bingjuan Zhang, Dan Feng, Zhenhua Lin, Jincheng Zhang, Yue Hao, Xiaoya Fan, Jingjing Chang (2019). Achieving high performance and stable inverted planar perovskite solar cells using lithium and cobalt co-doped nickel oxide as hole transport layers. Journal of Materials Chemistry C.DOI
1294. Dazheng Chen, Xueyi Li, Aixue Su, Hang Dong, Shangzheng Pang, Weidong Zhu, He Xi, Jincheng Zhang, Chunfu Zhang, Yue Hao (2019). Performance enhancement of perovskite solar cells via material quality improvement assisted by MAI/IPA solution post-treatment. Dalton Transactions.DOI
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1312. Zhuangzhuang Hu, Qian Feng, Zhaoqing Feng, Yuncong Cai, Yixian Shen, Guangshuo Yan, Xiaoli Lu, Chunfu Zhang, Hong Yu Zhou, Jincheng Zhang, Yue Hao (2019). Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-Ga2O3 Thin Film. Nanoscale Research Letters.DOI
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1315. Lin Feng Yang, Lin‐An Yang, Taotao Rong, Zhi Hao Jin, Yue Hao (2019). A five-octave broadband LNA MMIC using bandwidth enhancement and noise reduction technique. IEICE Electronics Express.DOI
1316. Wei Mao, Haiyong Wang, P. Shi, Xiao-Fei Wang, Ming Du, Xue-Feng Zheng, Chong Wang, Xiaohua Ma, Jincheng Zhang, Yue Hao (2018). Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions. Chinese Physics B.DOI
1317. Chong Wang, Xin Wang, Xue-Feng Zheng, Yun Wang, Yunlong He, Ye Tian, Qing Guo He, Ji Wu, Wei Mao, Xiaohua Ma, Jincheng Zhang, Yue Hao (2018). Characteristics and threshold voltage model of GaN-based FinFET with recessed gate. Chinese Physics B.DOI
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1319. Zhiyu Lin, Zhibin Chen, Jincheng Zhang, Shengrui Xu, Teng Jiang, Jun Luo, Lixin Guo, Yue Hao (2018). Polar Dependence of Threading Dislocation Density in GaN Films Grown by Metal-Organic Chemical Vapor Deposition. Chinese Physics Letters.DOI
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1321. Ze-Yang Ren, Jin-Feng Zhang, Jin-Cheng Zhang, Sheng-Rui Xu, Chun-Fu Zhang, Kai Su, Yao Li, Yue Hao (2018). Growth and Characterization of the Laterally Enlarged Single Crystal Diamond Grown by Microwave Plasma Chemical Vapor Deposition.DOI
1322. Wei Mao, Hai-Yong Wang, Peng Shi, Cui Yang, Yan-Tao Zhang, Xuefeng Zheng, Chong Wang, Jin-Cheng Zhang, Yue Hao (2018). Study of GaN-based step-doping superjunction CAVET for further improvement of breakdown voltage and specific on-resistance.DOI
1323. Y. Li, Jinfeng Zhang, Jun-Shuai Xue, Guipeng Liu, Rudai Quan, Xiaoling Duan, Jin-Cheng Zhang, Yue Hao (2018). Electronic Transport Properties in AlInGaN/AlGaN Heterostructures.DOI
1324. Yachao Zhang, Zhizhe Wang, Shengrui Xu, Weimin Bao, Tao Zhang, Jun Huang, Jincheng Zhang, Yue Hao (2018). Effects of channel thickness on structure and transport properties of AlGaN/InGaN heterostructures grown by pulsed metal organic chemical vapor deposition. Materials Research Bulletin.DOI
1325. Yunlong He, Qing Guo He, Minhan Mi, Chong Wang, Yue Hao, Meng Zhang, Ling Yang, Xiaohua Ma (2018). Fully recessed-gate normally-off AlGaN/GaN high electron mobility transistors with high breakdown electric field. 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).DOI
1326. Xiaoling Duan, Jincheng Zhang, Shulong Wang, Yao Li, Shengrui Xu, Yue Hao (2018). A High-Performance Gate Engineered InGaN Dopingless Tunnel FET. IEEE Transactions on Electron Devices.DOI
1327. Ying Wang, Jin‐Ping Ao, Shibin Liu, Yue Hao (2018). Thermal Modeling of the GaN-based Gunn Diode at Terahertz Frequencies. Applied Sciences.DOI
1328. Yachao Zhang, Zhizhe Wang, Rui Guo, Ge Liu, Shengrui Xu, Weimin Bao, Jincheng Zhang, Yue Hao (2018). High performance InGaN double channel high electron mobility transistors with strong coupling effect between the channels. Applied Physics Letters.DOI
1329. Jiejie Zhu, Xiaohua Ma, Bin Hou, Mi Ma, Qing Zhu, Lixiang Chen, Ling Yang, Peng Zhang, Xiaowei Zhou, Yue Hao (2018). Comparative Study on Charge Trapping Induced ${V}_{\textsf{th}}$ Shift for GaN-Based MOS-HEMTs With and Without Thermal Annealing Treatment. IEEE Transactions on Electron Devices.DOI
1330. Yunlong He, Chong Wang, Peijun Ma, Zhan Wang, Meng Zhang, Ling Yang, Xuefeng Zheng, Lixin Guo, Xiaohua Ma, Yue Hao (2018). Effect of Inductively Couple Plasma‐Based Oxygen Plasma Treatment on AlGaN/GaN HEMT. physica status solidi (a).DOI
1331. Zhaoke Bian, Hong Yu Zhou, Shengrui Xu, Tao Zhang, Kui Dang, Jiabo Chen, Jincheng Zhang, Yue Hao (2018). High-performance quasi-vertical GaN Schottky diode with low turn-on voltage. Superlattices and Microstructures.DOI
1332. Xiaomeng Fan, Jing Bai, Shengrui Xu, J.C. Zhang, P.X. Li, Ruoshi Peng, Y. Zhao, J.J. Du, Xuefang Shi, Yue Hao (2018). Crack-free GaN-based ultraviolet multiple quantum wells structures grown on AlN/2° misoriented sapphire template. Thin Solid Films.DOI
1333. Yachao Zhang, Tao Zhang, Hong Yu Zhou, Yao Li, Shengrui Xu, Weimin Bao, Jincheng Zhang, Yue Hao (2018). InGaN-channel high-electron-mobility transistor with enhanced linearity and high-temperature performance. Applied Physics Express.DOI
1334. Weihang Zhang, Jincheng Zhang, Ming Xiao, Li Zhang, Yue Hao (2018). Al0.3Ga0.7N/GaN (10 nm)/Al0.1Ga0.9N HEMTs With Low Leakage Current and High Three-Terminal Breakdown Voltage. IEEE Electron Device Letters.DOI
1335. Jinjuan Du, Shengrui Xu, Jincheng Zhang, Peixian Li, Zhiyu Lin, Ying Zhao, Ruoshi Peng, Xiaomeng Fan, Hongchang Tao, Yue Hao (2018). Determination of N-polar AlN/GaN heterojunction valance-band offsets by X-ray photoelectron spectroscopy. Materials Letters.DOI
1336. Lixiang Chen, Xiaohua Ma, Jiejie Zhu, Bin Hou, Fang Song, Qing Zhu, Meng Zhang, Ling Yang, Yue Hao (2018). Polarization Engineering in PZT/AlGaN/GaN High-Electron-Mobility Transistors. IEEE Transactions on Electron Devices.DOI
1337. Taotao Rong, Lin‐An Yang, Ziyue Zhao, Lin Yang, Yue Hao (2018). Performance of resonant tunneling diodes based on the nonpolar-oriented AlGaN/GaN heterostructures. Japanese Journal of Applied Physics.DOI
1338. Xue-Feng Zheng, Shuai-Shuai Dong, Peng Ji, Chong Wang, Yunlong He, Ling Lv, Xiaohua Ma, Yue Hao (2018). Characterization of bulk traps and interface states in AlGaN/GaN heterostructure under proton irradiation. Applied Physics Letters.DOI
1339. Xiaomeng Fan, Shengrui Xu, Peixian Li, Jincheng Zhang, Ruoshi Peng, Ying Zhao, Jinjuan Du, Yue Hao (2018). Nonpolar and semipolar ultraviolet multiple quantum wells on GaN/sapphire. Materials Science in Semiconductor Processing.DOI
1340. Li Zhang, Hong Yu Zhou, Weihang Zhang, Kui Dang, Tao Zhang, Peijun Ma, Xiaohua Ma, Jincheng Zhang, Yue Hao (2018). AlGaN-Channel Gate Injection Transistor on Silicon Substrate With Adjustable 4–7-V Threshold Voltage and 1.3-kV Breakdown Voltage. IEEE Electron Device Letters.DOI
1341. Chong Wang, Qing Guo He, Ji Wu, Xuefeng Zheng, Yunlong He, Xin Wang, Ye Tian, Wei Mao, Xiaohua Ma, Jincheng Zhang, Yue Hao (2018). Study of the Temperature Dependence of AlGaN/GaN HEMTs with Oxygen Plasma Treatment. physica status solidi (a).DOI
1342. Minhan Mi, Yang Lu, Yue Hao, Xiaohua Ma, Ling Yang, Bin Hou, Meng Zhang (2018). Improved fmax and breakdown voltage in AlGaN/GaN HEMT with plasma treatment. 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).DOI
1343. Chong Wang, Xin Wang, Xuefeng Zheng, Qing Guo He, Ji Wu, Ye Tian, Wei Mao, Hua Xiao, Yue Hao (2018). GaN-based enhancement-mode FinFET with double-channel AlGaN/GaN heterostructure. 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).DOI
1344. Lixiang Chen, Qing Zhu, Bin Hou, Jiejie Zhu, Xiaohua Ma, Yue Hao (2018). Influence of the oxygen in Hot-Carrier-Stress-Induced degradation in AlGaN/GaN high electron mobility transistors. 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).DOI
1345. Ling Yang, Bin Hou, Meng Zhang, Qing Zhu, Jiejie Zhu, Xiaowei Zhou, Xiaohua Ma, Minhan Mi, Mei Wu, Hengshuang Zhang, Yue Hao (2018). Enhanced DC and RF characteristics in E/D-mode AlGaN/GaN HEMTs by TiN-based source contact technology. 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).DOI
1346. Yang Lu, Xiaohua Ma, Ling Yang, Bin Hou, Minhan Mi, Meng Zhang, Jiaxin Zheng, Hengshuang Zhang, Yue Hao (2018). High RF Performance AlGaN/GaN HEMT Fabricated by Recess-Arrayed Ohmic Contact Technology. IEEE Electron Device Letters.DOI
1347. Ying Wang, Zhiyuan Li, Yue Hao, Xin Luo, Junpeng Fang, Ya-chao Ma, Chenghao Yu, Fei Cao (2018). Evaluation by Simulation of AlGaN/GaN Schottky Barrier Diode (SBD) With Anode-Via Vertical Field Plate Structure. IEEE Transactions on Electron Devices.DOI
1348. Meng Zhang, Xiaohua Ma, Ling Yang, Minhan Mi, Bin Hou, Yunlong He, Sheng Hao Wu, Yang Lu, Hengshuang Zhang, Qing Zhu, Jun Yin, Jiafeng Wu, Lin‐An Yang, Yue Hao (2018). Influence of Fin Configuration on the Characteristics of AlGaN/GaN Fin-HEMTs. IEEE Transactions on Electron Devices.DOI
1349. Xiaoling Duan, Jincheng Zhang, Ming Xiao, Jinfeng Zhang, Yue Hao (2018). GaN microrod sidewall epitaxial lateral overgrowth on a close-packed microrod template. Japanese Journal of Applied Physics.DOI
1350. Ming Xiao, Xiaoling Duan, Jincheng Zhang, Yue Hao (2018). Enhancement-Mode AlN/GaN HEMTs With High Ion/Ioff and Low-Leakage-Current Fabricated With Low-Power Surface Oxidation Treatment. IEEE Electron Device Letters.DOI
1351. Jiejie Zhu, Bin Hou, Lixiang Chen, Qing Zhu, Ling Yang, Xiaowei Zhou, Peng Zhang, Xiaohua Ma, Yue Hao (2018). Threshold voltage shift and interface/border trapping mechanism in Al2O3/AlGaN/GaN MOS-HEMTs. IEEE International Reliability Physics Symposium proceedings.DOI
1352. Taotao Rong, Lin‐An Yang, Lin Yang, Yue Hao (2018). Theoretical investigation into negative differential resistance characteristics of resonant tunneling diodes based on lattice-matched and polarization-matched AlInN/GaN heterostructures. Journal of Applied Physics.DOI
1353. Ling Yang, Minhan Mi, Bin Hou, Jiejie Zhu, Meng Zhang, Yang Lu, Qing Zhu, Xiaowei Zhou, Jun Yin, Jiafeng Wu, Xiaohua Ma, Yue Hao (2018). The Recessed Trapezoidal Groove Dual‐Gate AlGaN/GaN E‐Mode Transistor by Using Depletion Enhancement Effect. physica status solidi (a).DOI
1354. Chong Wang, Xin Wang, Xuefeng Zheng, Qing Guo He, Ji Wu, Ye Tian, Wei Mao, Xiaohua Ma, Yue Hao (2018). GaN‐based FinFET with double‐channel AlGaN/GaN heterostructure. Electronics Letters.DOI
1355. Bin Hou, Xiaohua Ma, Jiejie Zhu, Ling Yang, Weiwei Chen, Minhan Mi, Qing Zhu, Lixiang Chen, Rong Zhang, Meng Zhang, Xiaowei Zhou, Yue Hao (2018). 0.9-A/mm, 2.6-V Flash-Like Normally-Off Al2O3/AlGaN/GaN MIS-HEMTs Using Charge Trapping Technique. IEEE Electron Device Letters.DOI
1356. Tao Zhang, Jincheng Zhang, Hong Yu Zhou, Tangsheng Chen, Kai Zhang, Zhuangzhuang Hu, Zhaoke Bian, Kui Dang, Yi Wang, Li Zhang, Jing Ning, Peijun Ma, Yue Hao (2018). A 1.9 kV/2.61 mΩ·cm2 Lateral GaN Schottky Barrier Diode on Silicon Substrate with Tungsten Anode and Low Turn-On Voltage of 0.35 V. IEEE Electron Device Letters.DOI
1357. Weihang Zhang, Jincheng Zhang, Ming Xiao, Li Zhang, Yue Hao (2018). High Breakdown-Voltage (>2200 V) AlGaN-Channel HEMTs With Ohmic/Schottky Hybrid Drains. IEEE Journal of the Electron Devices Society.DOI
1358. Ling Yang, Bin Hou, Minhan Mi, Qing Zhu, Mei Wu, Jiejie Zhu, Yang Lu, Meng Zhang, Lixiang Chen, Xiaowei Zhou, Ling Lv, Xiaohua Ma, Yue Hao (2018). High-Performance Enhancement-mode AlGaN/GaN high electron mobility transistors combined with TiN-based Source Contact Ledge and Two-Step Fluorine Treatment. IEEE Electron Device Letters.DOI
1359. Hengsheng Shan, Xiaoya Li, Zhiyu Lin, Ling Lv, Ming Xiao, Bin Chen, Zhen Bi, Jinjuan Du, Ruoshi Peng, Shengrui Xu, Jincheng Zhang, Yue Hao (2018). Effect of ITO Film on InGaN/GaN MQWs Solar Cell under Low Total-Dose Gamma-Ray Radiation. ECS Journal of Solid State Science and Technology.DOI
1360. Ying Jing, Genquan Han, Yan Liu, Jincheng Zhang, Yue Hao (2018). Phonon Limited Electron Mobility in Germanium nFinFETs: Fin Direction Dependence. IEEE International Conference on Solid-State and Integrated Circuit Technology.DOI
1361. Meng Liu, Genquan Han, Yan Liu, Yue Hao (2018). U-Gate SiGeSn/GeSn Heterojunction Tunneling Field-Effect Transistors. IEEE International Conference on Solid-State and Integrated Circuit Technology.DOI
1362. Yi Zhang, Genquan Han, Yan Liu, Huan Liu, Jing Li, Yue Hao (2018). Self-aligned Ge nMOSFETs with gate-last process on GeOI platform. IEEE International Conference on Solid-State and Integrated Circuit Technology.DOI
1363. Liaojun Wan, Fuchao He, Yu Qin, Zhenhua Lin, Jie Su, Jingjing Chang, Yue Hao (2018). Effects of Interfacial Passivation on the Electrical Performance, Stability, and Contact Properties of Solution Process Based ZnO Thin Film Transistors. Materials.DOI
1364. Weidong Zhu, Qianni Zhang, Dazheng Chen, Zeyang Zhang, Zhenhua Lin, Jingjing Chang, Jincheng Zhang, Chunfu Zhang, Yue Hao (2018). Intermolecular Exchange Boosts Efficiency of Air‐Stable, Carbon‐Based All‐Inorganic Planar CsPbIBr2 Perovskite Solar Cells to Over 9%. Advanced Energy Materials.DOI
1365. Hang Dong, Shangzheng Pang, Yi Zhang, Dazheng Chen, Weidong Zhu, He Xi, Jingjing Chang, Jincheng Zhang, Chunfu Zhang, Yue Hao (2018). Improving Electron Extraction Ability and Device Stability of Perovskite Solar Cells Using a Compatible PCBM/AZO Electron Transporting Bilayer. Nanomaterials.DOI
1366. Jie Su, Zheng‐Tang Liu, Rui Guo, Jingjing Chang, Zhenhua Lin, Yue Hao (2018). Understanding the transport and contact properties of metal/BN-MoS2 interfaces to realize high performance MoS2 FETs. Journal of Alloys and Compounds.DOI
1367. Ruoying Kanyang, Fan Zhang, Genquan Han, Yan Liu, Yao Shao, Jincheng Zhang, Yue Hao (2018). Rainbow trapping and releasing in InSb graded subwavelength grooves by thermal tuning at the terahertz range. Optical Materials Express.DOI
1368. Xing Guo, Bingjuan Zhang, Zhenhua Lin, Jing Ma, Jie Su, Weidong Zhu, Chunfu Zhang, Jincheng Zhang, Jingjing Chang, Yue Hao (2018). Interface engineering of TiO2/perovskite interface via fullerene derivatives for high performance planar perovskite solar cells. Organic Electronics.DOI
1369. Chih‐Cheng Yang, Po‐Hsun Chen, Chih‐Cheng Shih, Minghui Wang, Tsung‐Ming Tsai, Hao‐Xuan Zheng, Wen‐Chung Chen, Min-Chen Chen, Hui‐Chun Huang, Xiaohua Ma, Yue Hao, Jen‐Wei Huang, Simon M. Sze, Ting‐Chang Chang (2018). Enhancement of Surface Chemical and Physical Properties of Germanium–Sulfur Thin Film Using a Water‐Supplemented Carbon Dioxide Supercritical Fluid Treatment Technique. Advanced Materials Interfaces.DOI
1370. Weidong Zhu, Qianni Zhang, Chunfu Zhang, Zeyang Zhang, Dazheng Chen, Zhenhua Lin, Jingjing Chang, Jincheng Zhang, Yue Hao (2018). Aged Precursor Solution toward Low-Temperature Fabrication of Efficient Carbon-Based All-Inorganic Planar CsPbIBr2 Perovskite Solar Cells. ACS Applied Energy Materials.DOI
1371. Yi Zhang, Genquan Han, Hao Wu, Xiao Wang, Yan Liu, Jincheng Zhang, Huan Liu, Haihua Zheng, Xue Chen, Chang Liu, Yue Hao (2018). Reduced Contact Resistance Between Metal and n-Ge by Insertion of ZnO with Argon Plasma Treatment. Nanoscale Research Letters.DOI
1372. Hang Dong, Jiajie Mo, Shangzheng Pang, Dazheng Chen, Weidong Zhu, He Xi, Jingjing Chang, Jincheng Zhang, Chunfu Zhang, Yue Hao (2018). Alleviating hysteresis and improving efficiency of MA1−yFAyPbI3−xBrx perovskite solar cells by controlling the halide composition. Journal of Materials Science.DOI
1373. Jing Ma, Xing Guo, Long Zhou, Zhenhua Lin, Chunfu Zhang, Junqing Yan, Gang Lü, Jingjing Chang, Yue Hao (2018). Enhanced Planar Perovskite Solar Cell Performance via Contact Passivation of TiO2/Perovskite Interface with NaCl Doping Approach. ACS Applied Energy Materials.DOI
1374. Zeyang Ren, Jinfeng Zhang, Jincheng Zhang, Chunfu Zhang, Pengzhi Yang, Dazheng Chen, Yao Li, Yue Hao (2018). Research on the hydrogen terminated single crystal diamond MOSFET with MoO3 dielectric and gold gate metal. Journal of Semiconductors.DOI
1375. Jing Wei Sun, Hong Wang, Fang Song, Zhan Wang, Bingjie Dang, Mei Yang, Haixia Gao, Xiaohua Ma, Yue Hao (2018). Secure Electronics: Physically Transient Threshold Switching Device Based on Magnesium Oxide for Security Application (Small 27/2018). Small.DOI
1376. Long Zhou, Jie Su, Zhenhua Lin, Dazheng Chen, Weidong Zhu, Chunfu Zhang, Jincheng Zhang, Jingjing Chang, Yue Hao (2018). Theoretical and Experimental Investigation of Mixed Pb–In Halide Perovskites. The Journal of Physical Chemistry C.DOI
1377. Zeyang Ren, Guansheng Yuan, Jinfeng Zhang, Lei Xu, Jincheng Zhang, Wanjiao Chen, Yue Hao (2018). Hydrogen-terminated polycrystalline diamond MOSFETs with Al2O3 passivation layers grown by atomic layer deposition at different temperatures. AIP Advances.DOI
1378. Jing Wei Sun, Hong Wang, Fang Song, Zhan Wang, Bingjie Dang, Mei Yang, Haixia Gao, Xiaohua Ma, Yue Hao (2018). Physically Transient Threshold Switching Device Based on Magnesium Oxide for Security Application. Small.DOI
1379. Dazheng Chen, Shangzheng Pang, Weidong Zhu, Hongxiao Zhang, Long Zhou, Fengqin He, Jingjing Chang, Zhenhua Lin, He Xi, Jincheng Zhang, Chunfu Zhang, Yue Hao (2018). Efficient Semitransparent Perovskite Solar Cells Using a Transparent Silver Electrode and Four-Terminal Perovskite/Silicon Tandem Device Exploration. Journal of Nanomaterials.DOI
1380. Ang Li, Qian Feng, Jincheng Zhang, Zhuangzhuang Hu, Zhaoqing Feng, Ke Zhang, Chunfu Zhang, Hong Yu Zhou, Yue Hao (2018). Investigation of temperature dependent electrical characteristics on Au/Ni/β-Ga 2 O 3 Schottky diodes. Superlattices and Microstructures.DOI
1381. Yi Zhang, Genquan Han, Hengsheng Shan, Yan Liu, Jincheng Zhang, Yue Hao (2018). Total Dose Effects on Novel Al/TiO2/n-Ge Metal-Insulator-Semiconductor Contacts under Gamma-ray Irradiation. International Conference on Radiation Effects of Electronic Devices (ICREED).DOI
1382. Peng Zhao, Ziye Liu, Zhenhua Lin, Dazheng Chen, Jie Su, Chunfu Zhang, Jincheng Zhang, Jingjing Chang, Yue Hao (2018). Device simulation of inverted CH3NH3PbI3−xClx perovskite solar cells based on PCBM electron transport layer and NiO hole transport layer. Solar Energy.DOI
1383. Ziye Liu, Jingjing Chang, Zhenhua Lin, Long Zhou, Junqing Yan, Dazheng Chen, Chunfu Zhang, Shengzhong Frank Liu, Yue Hao (2018). High‐Performance Planar Perovskite Solar Cells Using Low Temperature, Solution–Combustion‐Based Nickel Oxide Hole Transporting Layer with Efficiency Exceeding 20%. Advanced Energy Materials.DOI
1384. Shangzheng Pang, Xueyi Li, Hang Dong, Dazheng Chen, Weidong Zhu, Jingjing Chang, Zhenhua Lin, He Xi, Jincheng Zhang, Chunfu Zhang, Yue Hao (2018). Efficient Bifacial Semitransparent Perovskite Solar Cells Using Ag/V2O5 as Transparent Anodes. ACS Applied Materials & Interfaces.DOI
1385. Yan Liu, Ruoying Kanyang, Genquan Han, Yao Shao, Cizhe Fang, Yan Huang, Siqing Zhang, Jincheng Zhang, Yue Hao (2018). Rainbow Trapping in Highly Doped Silicon Graded Grating Strip at the Terahertz Range. IEEE photonics journal.DOI
1386. Yi Zhang, Genquan Han, Jiabo Chen, Yan Liu, Jincheng Zhang, Yue Hao (2018). Improved thermal stability of Al/TiÜ2/n-Ge ohmic contact by inserting single layer graphene. International Workshop on Junction Technology.DOI
1387. Jiuren Zhou, Genquan Han, Jing Li, Yan Liu, Yue Peng, Jincheng Zhang, Qingqing Sun, David Wei Zhang, Yue Hao (2018). Negative Differential Resistance in Negative Capacitance FETs. IEEE Electron Device Letters.DOI
1388. Jibao Wu, Ruoying Kanyang, Genquan Han, Jiuren Zhou, Yan Liu, Yibo Wang, Yue Peng, Jincheng Zhang, Qingqing Sun, David Wei Zhang, Yue Hao (2018). Nonideality of Negative Capacitance Ge Field-Effect Transistors Without Internal Metal Gate. IEEE Electron Device Letters.DOI
1389. Jiuren Zhou, Genquan Han, Jing Li, Yan Liu, Yue Peng, Jincheng Zhang, Qingqing Sun, David Wei Zhang, Yue Hao (2018). Effects of the Variation of ${V}_{\text {GS}}$ Sweep Range on the Performance of Negative Capacitance FETs. IEEE Electron Device Letters.DOI
1390. Yi Zhang, Yan Liu, Genquan Han, Huan Liu, Yue Hao (2018). Improving metal/ n ‐Ge ohmic contact by inserting TiO 2 deposited by PEALD. Micro & Nano Letters.DOI
1391. Qianni Zhang, Ruizhi Peng, Chunfu Zhang, Dazheng Chen, Zhenhua Lin, Jingjing Chang, Jincheng Zhang, Yue Hao (2018). Inverted Organic Solar Cells with Low-Temperature Al-Doped-ZnO Electron Transport Layer Processed from Aqueous Solution. Polymers.DOI
1392. Yao Li, Jinfeng Zhang, Guipeng Liu, Zeyang Ren, Jincheng Zhang, Yue Hao (2018). Mobility of Two‐Dimensional Hole Gas in H‐Terminated Diamond. physica status solidi (RRL) - Rapid Research Letters.DOI
1393. Hongjuan Wang, Xiangwei Jiang, Nuo Xu, Genquan Han, Yue Hao, Shu‐Shen Li, David Esseni (2018). Revised Analysis of Design Options and Minimum Subthreshold Swing in Piezoelectric FinFETs. IEEE Electron Device Letters.DOI
1394. Yan Liu, Cizhe Fang, Xi Gao, Genquan Han, Qingfang Zhang, Yao Shao, Jincheng Zhang, Yue Hao (2018). Theoretical Investigation of Tensile-Strained GeSn/SiGeSn Multiple Quantum Well Laser Wrapped in Si 3N4 Liner Stressor. IEEE photonics journal.DOI
1395. Zhuangzhuang Hu, Hong Yu Zhou, Qian Feng, Jincheng Zhang, Chunfu Zhang, Kui Dang, Yuncong Cai, Zhaoqing Feng, Yangyang Gao, Xuanwu Kang, Yue Hao (2018). Field-Plated Lateral β-Ga2O3 Schottky Barrier Diode with High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2. IEEE Electron Device Letters.DOI
1396. Bingjie Dang, Quantan Wu, Fang Song, Jing Wei Sun, Mei Yang, Xiaohua Ma, Hong Wang, Yue Hao (2018). A bio-inspired physically transient/biodegradable synapse for security neuromorphic computing based on memristors. Nanoscale.DOI
1397. Long Zhou, Jingjing Chang, Ziye Liu, Xu Sun, Zhenhua Lin, Dazheng Chen, Chunfu Zhang, Jincheng Zhang, Yue Hao (2018). Enhanced planar perovskite solar cell efficiency and stability using a perovskite/PCBM heterojunction formed in one step. Nanoscale.DOI
1398. Zhuangzhuang Hu, Hong Yu Zhou, Kui Dang, Yuncong Cai, Zhaoqing Feng, Yangyang Gao, Qian Feng, Jincheng Zhang, Yue Hao (2018). Lateral $\beta$ -Ga2O3 Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV. IEEE Journal of the Electron Devices Society.DOI
1399. Xing Guo, Bingjuan Zhang, Zhenhua Lin, Jie Su, Zhou Yang, Chunfu Zhang, Jingjing Chang, Shengzhong Frank Liu, Yue Hao (2018). Highly efficient perovskite solar cells based on a dopant-free conjugated DPP polymer hole transport layer: influence of solvent vapor annealing. Sustainable Energy & Fuels.DOI
1400. Yue Peng, Wenwu Xiao, Genquan Han, Jibao Wu, Huan Liu, Yan Liu, Nuo Xu, Tsu‐Jae King Liu, Yue Hao (2018). Nanocrystal-Embedded-Insulator Ferroelectric Negative Capacitance FETs with Sub-kT/q Swing. IEEE Electron Device Letters.DOI
1401. Zhenhua Lin, Hai Zhu, Long Zhou, Jianhui Du, Chunfu Zhang, Qing‐Hua Xu, Jingjing Chang, Jianyong Ouyang, Yue Hao (2018). Investigation on the structural, morphological, electronic and photovoltaic properties of a perovskite thin film by introducing lithium halide. RSC Advances.DOI
1402. Yue Peng, Genquan Han, Zhibin Chen, Qinglong Li, Jincheng Zhang, Yue Hao (2018). Analytical Calculation of Influence of Ferroelectric Properties on Electrical Characteristics Negative Capacitance Germanium FETs. IEEE Journal of the Electron Devices Society.DOI
1403. Weidong Zhu, Qianni Zhang, Chunfu Zhang, Dazheng Chen, Long Zhou, Zhenhua Lin, Jingjing Chang, Jincheng Zhang, Yue Hao (2018). A non-equilibrium Ti 4+ doping strategy for an efficient hematite electron transport layer in perovskite solar cells. Dalton Transactions.DOI
1404. Dazheng Chen, He Xi, Chunfu Zhang, Jingjing Chang, Zhenhua Lin, Weidong Zhu, Shangzheng Pang, Haifeng Yang, Jincheng Zhang, Lixin Guo, Yue Hao (2018). Simulation study towards high performance transparent-conductive-oxide free perovskite solar cells using metal microcavity and optical coupling layer. IEEE photonics journal.DOI
1405. Siqing Zhang, Yan Liu, Cizhe Fang, Yao Shao, Genquan Han, Jincheng Zhang, Yue Hao (2018). Theoretical study of strained black phosphorus photodetector integrated with silicon waveguide. Superlattices and Microstructures.DOI
1406. Qianni Zhang, Weidong Zhu, Dazheng Chen, Zeyang Zhang, Zhenhua Lin, Jingjing Chang, Jincheng Zhang, Chunfu Zhang, Yue Hao (2018). Light Processing Enables Efficient Carbon-Based, All-Inorganic Planar CsPbIBr2 Solar Cells with High Photovoltages. ACS Applied Materials & Interfaces.DOI
1407. Jiaqi Zhang, Yi Zhang, Dazheng Chen, Weidong Zhu, He Xi, Jincheng Zhang, Chunfu Zhang, Yue Hao (2018). Bendable Single Crystal Silicon Nanomembrane Thin Film Transistors with Improved Low-Temperature Processed Metal/n-Si Ohmic Contact by Inserting TiO2 Interlayer. Nanomaterials.DOI
1408. Dongming Miao, Shujing Wu, Xianying Dai, Tianlong Zhao, Yue Hao (2018). The formation mechanism of globally biaxial strain in He+ implanted silicon-on-insulator wafer based on the plastic deformation and smooth sliding of buried SiO2 film. Applied Physics Letters.DOI
1409. Zeyang Ren, Wanjiao Chen, Jinfeng Zhang, Jincheng Zhang, Chunfu Zhang, Guansheng Yuan, Kai Su, Zhiyu Lin, Yue Hao (2018). High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors. IEEE Journal of the Electron Devices Society.DOI
1410. Rulin Liu, Liang Fang, Yue Hao, Yaqing Chi (2018). Influence of Oxygen Vacancy Density on the Polaronic Configuration in Rutile. Materials.DOI
1411. Yahui Zhang, Shuiying Xiang, Xingxing Guo, Aijun Wen, Yue Hao (2018). Polarization-resolved and polarization- multiplexed spike encoding properties in photonic neuron based on VCSEL-SA. Scientific Reports.DOI
1412. Cizhe Fang, Yan Liu, Genquan Han, Yao Shao, Jincheng Zhang, Yue Hao (2018). Localized plasmon resonances for black phosphorus bowtie nanoantennas at terahertz frequencies. Optics Express.DOI
1413. Cizhe Fang, Yan Liu, Yibo Wang, Jibao Wu, Genquan Han, Yao Shao, Jincheng Zhang, Yue Hao (2018). Buffer-Free GeSn with High Relaxation Degree Grown on Si(001) Substrate for Photodetection. IEEE photonics journal.DOI
1414. Genquan Han, Jiuren Zhou, Yan Liu, Jing Li, Yue Peng, Yue Hao (2018). Experimental Investigation of Fundamentals of Negative Capacitance FETs. IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference.DOI
1415. Jiuren Zhou, Genquan Han, Nuo Xu, Jing Li, Yue Peng, Yan Liu, Jincheng Zhang, Qingqing Sun, David Wei Zhang, Yue Hao (2018). Incomplete Dipoles Flipping Produced Near Hysteresis-Free Negative Capacitance Transistors. IEEE Electron Device Letters.DOI
1416. Shuiying Xiang, Junkai Gong, Yahui Zhang, Xingxing Guo, Yanan Han, Aijun Wen, Yue Hao (2018). Numerical Implementation of Wavelength-Dependent Photonic Spike Timing Dependent Plasticity Based on VCSOA. IEEE Journal of Quantum Electronics.DOI
1417. Yuncong Cai, Ke Zhang, Qian Feng, Yan Zuo, Zhuangzhuang Hu, Zhaoqing Feng, Hong Yu Zhou, Xiaoli Lu, Chunfu Zhang, Weihua Tang, Jincheng Zhang, Yue Hao (2018). Tin-assisted growth of ε-Ga 2 O 3 film and the fabrication of photodetectors on sapphire substrate by PLD. Optical Materials Express.DOI
1418. Jie Su, Rui Guo, Zhenhua Lin, Siyu Zhang, Jincheng Zhang, Jingjing Chang, Yue Hao (2018). Unusual Electronic and Optical Properties of Two-Dimensional Ga 2 O 3 Predicted by Density Functional Theory. The Journal of Physical Chemistry C.DOI
1419. Yu Xu, Zhiyuan An, Lixin Zhang, Qian Feng, Jincheng Zhang, Chunfu Zhang, Yue Hao (2018). Solar blind deep ultraviolet β-Ga 2 O 3 photodetectors grown on sapphire by the Mist-CVD method. Optical Materials Express.DOI
1420. Yi‐Ting Tseng, I-Chieh Chen, Ting‐Chang Chang, J.C. Huang, Chih‐Cheng Shih, Hao-Xuan Zheng, Wen‐Chung Chen, Minghui Wang, Wei‐Chen Huang, Min-Chen Chen, Xiaohua Ma, Yue Hao, Simon M. Sze (2018). Enhanced electrical behavior from the galvanic effect in Ag-Cu alloy electrode conductive bridging resistive switching memory. Applied Physics Letters.DOI
1421. Zhaoqing Feng, Lu Huang, Qian Feng, Xiang Li, Hui Zhang, Weihua Tang, Jincheng Zhang, Yue Hao (2018). Influence of annealing atmosphere on the performance of a β-Ga 2 O 3 thin film and photodetector. Optical Materials Express.DOI
1422. Minghui Wang, Ting‐Chang Chang, Chih‐Cheng Shih, Yi‐Ting Tseng, Tsung‐Ming Tsai, Hao-Xuan Zheng, Peiyu Wu, Hui‐Chun Huang, Wen‐Chung Chen, Jen‐Wei Huang, Xiaohua Ma, Yue Hao, Simon M. Sze (2018). Performance improvement after nitridation treatment in HfO2-based resistance random-access memory. Applied Physics Express.DOI
1423. Ming Xiao, Jincheng Zhang, Xiaoling Duan, Weihang Zhang, Hengsheng Shan, Jing Ning, Yue Hao (2018). High Performance Al0.10Ga0.90N Channel HEMTs. IEEE Electron Device Letters.DOI
1424. Shujing Wu, Dongming Miao, Xianying Dai, Chenfeng Shao, Yue Hao (2018). Fabrication and characterization of uniaxially strained SOI with wafer level by mechanical bending and annealing. AIP Advances.DOI
1425. Shuiying Xiang, Yahui Zhang, Xingxing Guo, Aijun Wen, Yue Hao (2018). Photonic Generation of Neuron-Like Dynamics Using VCSELs Subject to Double Polarized Optical Injection. Journal of Lightwave Technology.DOI
1426. Jinjuan Du, Shengrui Xu, Peixian Li, Jincheng Zhang, Ying Zhao, Ruoshi Peng, Xiaomeng Fan, Yue Hao (2018). Effect of hexagonal hillock on luminescence characteristic of multiple quantum wells structure. Optical Materials.DOI
1427. Qin Lu, Cizhe Fang, Yan Liu, Yao Shao, Genquan Han, Jincheng Zhang, Yue Hao (2018). Temperature dependence of annealing on the contact resistance of MoS 2 with graphene electrodes observed. Japanese Journal of Applied Physics.DOI
1428. Yahui Zhang, Shuiying Xiang, Junkai Gong, Xinxing Guo, Aijun Wen, Yue Hao (2018). Spike encoding and storage properties in mutually coupled vertical-cavity surface-emitting lasers subject to optical pulse injection. Applied Optics.DOI
1429. Zhaoqing Feng, Qian Feng, Jincheng Zhang, Chunfu Zhang, Hong Yu Zhou, Xiang Li, Lu Huang, Lei Xu, Y. Hu, Shengjie Zhao, Yue Hao (2018). Band alignments of SiO2 and HfO2 dielectrics with (Al Ga1-)2O3 film (0≤x≤0.53) grown on Ga2O3 buffer layer on sapphire. Journal of Alloys and Compounds.DOI
1430. Qian Feng, Zhaoqing Feng, Zhuangzhuang Hu, Xiangyu Xing, Guangshuo Yan, Jincheng Zhang, Yongkuan Xu, Xiaozheng Lian, Yue Hao (2018). Temperature dependent electrical properties of pulse laser deposited Au/Ni/β-(AlGa)2O3 Schottky diode. Applied Physics Letters.DOI
1431. Yi Zhang, Gen-Quan Han, Yan Liu, Huan Liu, Jincheng Zhang, Yue Hao (2018). Ohmic Contact at Al/TiO 2 /n-Ge Interface with TiO 2 Deposited at Extremely Low Temperature. Chinese Physics Letters.DOI
1432. Jing Li, Jiuren Zhou, Genquan Han, Yan Liu, Yue Peng, Jincheng Zhang, Qingqing Sun, David Wei Zhang, Yue Hao (2018). Negative Capacitance Ge PFETs for Performance Improvement: Impact of Thickness of HfZrOx. IEEE Transactions on Electron Devices.DOI
1433. Xing Guo, Shuiying Xiang, Ya Hui Zhang, Ai Jun Wen, Yue Hao (2018). Information-Theory-Based Complexity Quantifier for Chaotic Semiconductor Laser With Double Time Delays. IEEE Journal of Quantum Electronics.DOI
1434. Fang Cizhe, Yan Liu, Qingfang Zhang, Genquan Han, Xi Gao, Shao Yao, Jincheng Zhang, Yue Hao (2018). Germanium-tin alloys: applications for optoelectronics in mid-infrared spectra. Opto-Electronic Advances.DOI
1435. Wenwu Xiao, Yue Peng, Shuaizhi Zheng, Qian Feng, Hong Yu Zhou, Chunfu Zhang, Jincheng Zhang, Yue Hao, Min Liao, Yichun Zhou (2018). Integration and Electrical Properties of Ferroelectric Hf0.5Zr0.5O2 Thin Film on Bulk β-Ga2O3(-201) Substrate for Memory Applications. IEEE Electron Device Letters.DOI
1436. Lin Feng Yang, Lin‐An Yang, Taotao Rong, Zhi Hao Jin, Yue Hao (2018). 1–30 GHz ultra-wideband low noise amplifier with on-chip temperature-compensation circuit. IEICE Electronics Express.DOI
1437. Peng Zhao, Yue Hao, Man Zhi Yue, Chen Lei, Zhenhua Lin, Jie Su, Dazheng Chen, Chunfu Zhang, Jincheng Zhang, Jingjing Chang (2018). Device Simulation of Organic–Inorganic Halide Perovskite/Crystalline Silicon Four-Terminal Tandem Solar Cell With Various Antireflection Materials. IEEE Journal of Photovoltaics.DOI
1438. 常永明，毛维，郝跃（2017）. 一种改进的AlGaN/GaN HEMT全局直流模型. 《微电子学》.
1439. 张力，林志宇，罗俊，王树龙，张进成，郝跃，戴扬，陈大正，郭立新（2017）. 具有p-GaN岛状埋层耐压结构的横向AlGaN/GaN高电子迁移率晶体管. 《物理学报》.
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1441. Jiaxin Zheng, Xiaohua Ma, Lü Yang, Bochao Zhao, Hengshuang Zhang, Meng Zhang, Lixiang Chen, Qing Zhu, Yue Hao (2017). The coupling effect of air-bridges on broadband spiral inductors in SiC-based MMIC technology. Chinese Physics B.DOI
1442. Shengrui Xu, Ying Zhao, Ren-Yuan Jiang, Teng Jiang, Zeyang Ren, Jincheng Zhang, Yue Hao (2017). Semipolar $(11\bar{2}2)$ and polar (0001) InGaN grown on sapphire substrate by using pulsed metal organic chemical vapor deposition. Chinese Physics B.DOI
1443. Ling Yang, Xiao-Wei Zhou, Xiaohua Ma, Ling Lv, Yanrong Cao, Jincheng Zhang, Yue Hao (2017). Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor. Chinese Physics B.DOI
1444. Li Zhang, Jin-Feng Zhang, Weihang Zhang, Tao Zhang, Lei Xu, Jin-Cheng Zhang, Yue Hao (2017). Robust Performance of AlGaN-Channel Metal-Insulator-Semiconductor High-Electron-Mobility Transistors at High Temperatures.DOI
1445. Xuefeng Zheng, Ao-Chen Wang, Xiao-Hui Hou, Ying-Zhe Wang, Hao-Tian Wen, Chong Wang, Yang Lu, Wei Mao, Xiao-Hua Ma, Yue Hao (2017). Influence of the Diamond Layer on the Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistors.DOI
1446. Li Zhang, Zhiyu Lin, Jun Luo, Shulong Wang, Jin-Cheng Zhang, Yue Hao, Yang Dai, Dazheng Chen, Li-xin Guo (2017). High breakdown voltage lateral AlGaN/GaN high electron mobility transistor with p-GaN islands buried buffer layer for power applications.DOI
1447. Cheng-Rui Xu, Ying Zhao, Ruoshi Peng, Jin-Cheng Zhang, Zhiyu Lin, Yong-Xiang Fan, Teng Jiang, Yue Hao (2017). Nonpolar face a AlN thin film based on face r SiC patterned substrate and preparing method thereof.
1448. Xiaoling Duan, Jincheng Zhang, Shulong Wang, Ru-Dai Quan, Yue Hao (2017). Effect of graded InGaN drain region and ’In’ fraction in InGaN channel on performances of InGaN tunnel field-effect transistor. Superlattices and Microstructures.DOI
1449. Yunlong He, Minhan Mi, Chong Wang, Xuefeng Zheng, Meng Zhang, Hengshuang Zhang, Ji Wu, Ling Yang, Peng Zhang, Xiaohua Ma, Yue Hao (2017). Enhancement-Mode AlGaN/GaN Nanowire Channel High Electron Mobility Transistor With Fluorine Plasma Treatment by ICP. IEEE Electron Device Letters.DOI
1450. Ying Wang, Ya-chao Ma, Yue Hao, Yue Hu, Gaofeng Wang, Fei Cao (2017). Simulation Study of 4H-SiC UMOSFET Structure With p + -polySi/SiC Shielded Region. IEEE Transactions on Electron Devices.DOI
1451. Teng Jiang, Zhiyu Lin, Jincheng Zhang, Shengrui Xu, Jun Huang, Mutong Niu, Xiaodong Gao, Lixin Guo, Yue Hao (2017). Raman mapping of hexagonal hillocks in N-polar GaN grown on c-plane sapphire. Superlattices and Microstructures.DOI
1452. Xin Luo, Ying Wang, Yue Hao, Fei Cao, Chenghao Yu, Xin-Xing Fei (2017). TCAD Simulation of Breakdown-Enhanced AlGaN-/GaN-Based MISFET With Electrode-Connected p-i-n Diode in Buffer Layer. IEEE Transactions on Electron Devices.DOI
1453. Jiejie Zhu, Lixiang Chen, Jie Jiang, Xiaoli Lu, Ling Yang, Bin Hou, Min Liao, Yichun Zhou, Xiaohua Ma, Yue Hao (2017). Ferroelectric Gate AlGaN/GaN E-Mode HEMTs With High Transport and Sub-Threshold Performance. IEEE Electron Device Letters.DOI
1454. Yachao Zhang, Zhizhe Wang, Shengrui Xu, Dazheng Chen, Weimin Bao, Jinfeng Zhang, Jincheng Zhang, Yue Hao (2017). Studies on the InAlN/InGaN/InAlN/InGaN double channel heterostructures with low sheet resistance. Applied Physics Letters.DOI
1455. Ruoshi Peng, Junchun Bai, Shengrui Xu, Jincheng Zhang, Jinjuan Du, Ying Zhao, Xiaomeng Fan, Mei Wu, Yue Hao (2017). Effects of 4° misoriented sapphire substrate on optical property of green InGaN/GaN multiple quantum wells. Superlattices and Microstructures.DOI
1456. Meng Zhang, Minhan Mi, Bin Hou, Qing Zhu, Lixiang Chen, Jiaxin Zheng, Hengshuang Zhang, Ling Yang, Xiaohua Ma, Yue Hao (2017). Improving the peak value and linearity of transconductance for AlGaN/GaN Fin-HEMTs by narrowing down the fin length. China International Forum on Solid State Lighting & International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).DOI
1457. Minhan Mi, Xiaohua Ma, Ling Yang, Bin Hou, Jiejie Zhu, Yunlong He, Meng Zhang, Sheng Hao Wu, Yue Hao (2017). 90 nm gate length enhancement-mode AlGaN/GaN HEMTs with plasma oxidation technology for high-frequency application. Applied Physics Letters.DOI
1458. Minhan Mi, Xiaohua Ma, Ling Yang, Yang Lu, Bin Hou, Jiejie Zhu, Meng Zhang, Hengshuang Zhang, Qing Zhu, Lin‐An Yang, Yue Hao (2017). Millimeter-Wave Power AlGaN/GaN HEMT Using Surface Plasma Treatment of Access Region. IEEE Transactions on Electron Devices.DOI
1459. Hengsheng Shan, Bin Chen, Xiaoya Li, Zhiyu Lin, Shengrui Xu, Yue Hao, Jincheng Zhang (2017). The performance enhancement of an InGaN/GaN multiple-quantum-well solar cell by superlattice structure. Japanese Journal of Applied Physics.DOI
1460. Yao Li, Jinfeng Zhang, Guipeng Liu, Ru-Dai Quan, Xiaoling Duan, Jincheng Zhang, Yue Hao (2017). Theoretical analysis of the mobility of two-dimensional electron gas in the quaternary AlxInyGa1-x-yN/GaN heterojunctions limited by the alloy composition fluctuation. AIP Advances.DOI
1461. Yan-Juan Liu, Ying Wang, Yue Hao, Junpeng Fang, Chan Shan, Fei Cao (2017). A Low Turn-Off Loss 4H-SiC Trench IGBT With Schottky Contact in the Collector Side. IEEE Transactions on Electron Devices.DOI
1462. Ling Yang, Minhan Mi, Bin Hou, Hengshuang Zhang, Jiejie Zhu, Qing Zhu, Yang Lu, Meng Zhang, Yunlong He, Lixiang Chen, Xiaowei Zhou, Ling Lv, Xiaohua Ma, Yue Hao (2017). Enhanced g m and f T With High Johnson’s Figure-of-Merit in Thin Barrier AlGaN/GaN HEMTs by TiN-Based Source Contact Ledge. IEEE Electron Device Letters.DOI
1463. Ling Yang, Minhan Mi, Bin Hou, Jiejie Zhu, Meng Zhang, Yunlong He, Yang Lu, Qing Zhu, Xiaowei Zhou, Ling Lv, Yanrong Cao, Xiaohua Ma, Yue Hao (2017). Improvement of Subthreshold Characteristic of Gate-Recessed AlGaN/GaN Transistors by Using Dual-Gate Structure. IEEE Transactions on Electron Devices.DOI
1464. Weihang Zhang, JunShuai Xue, Li Zhang, Tao Zhang, Zhiyu Lin, Jincheng Zhang, Yue Hao (2017). Trap state analysis in AlGaN/GaN/AlGaN double heterostructure high electron mobility transistors at high temperatures. Applied Physics Letters.DOI
1465. Bin Hou, Xiaohua Ma, Ling Yang, Jiejie Zhu, Qing Zhu, Lixiang Chen, Minhan Mi, Hengshuang Zhang, Meng Zhang, Peng Zhang, Xiaowei Zhou, Yue Hao (2017). 1.5-V-threshold-voltage Schottky barrier normally-off AlGaN/GaN high-electron-mobility transistors withfT/fmaxof 41/125 GHz. Applied Physics Express.DOI
1466. Yunlong He, Chong Wang, Minhan Mi, Meng Zhang, Qing Zhu, Peng Zhang, Ji Wu, Hengshuang Zhang, Xuefeng Zheng, Ling Yang, Xiaoling Duan, Xiaohua Ma, Yue Hao (2017). Investigation of enhancement-mode AlGaN/GaN nanowire channel high-electron-mobility transistor with oxygen-containing plasma treatment. Applied Physics Express.DOI
1467. Zhibin Chen, Jincheng Zhang, Shengrui Xu, JunShuai Xue, Jiaduo Zhu, Teng Jiang, Yue Hao (2017). Effect of AlN interlayer on the impurity incorporation of GaN film grown on sputtered AlN. Journal of Alloys and Compounds.DOI
1468. Jing Ma, Jingjing Chang, Zhenhua Lin, Xing Guo, Long Zhou, Ziye Liu, He Xi, Dazheng Chen, Chunfu Zhang, Yue Hao (2017). Elucidating the Roles of TiCl4 and PCBM Fullerene Treatment on TiO2 Electron Transporting Layer for Highly Efficient Planar Perovskite Solar Cells. The Journal of Physical Chemistry C.DOI
1469. Fang Song, Hong Wang, Jing Wei Sun, Haixia Gao, Shiwei Wu, Mei Yang, Xiaohua Ma, Yue Hao (2017). ZnO-Based Physically Transient and Bioresorbable Memory on Silk Protein. IEEE Electron Device Letters.DOI
1470. Weidong Zhu, Dazheng Chen, Long Zhou, Chunfu Zhang, Jingjing Chang, Zhenhua Lin, Jincheng Zhang, Yue Hao (2017). Intermediate Phase Intermolecular Exchange Triggered Defect Elimination in CH3NH3PbI3 toward Room-Temperature Fabrication of Efficient Perovskite Solar Cells. ACS Applied Materials & Interfaces.DOI
1471. Cizhe Fang, Yan Liu, Genquan Han, Yao Shao, Yan Huang, Jincheng Zhang, Yue Hao (2017). Absorption Enhancement for Black Phosphorus Active Layer Based on Plasmonic Nanocavity. IEEE photonics journal.DOI
1472. Jiaduo Zhu, Shengrui Xu, Jing Ning, Dong Wang, Jincheng Zhang, Yue Hao (2017). Gate-Tunable Electronic Structure of Black Phosphorus/HfS2 P–N van der Waals Heterostructure with Uniformly Anisotropic Band Dispersion. The Journal of Physical Chemistry C.DOI
1473. Kaixuan Wang, Zhenhua Lin, Jing Ma, Ziye Liu, Long Zhou, Jianhui Du, Dazheng Chen, Chunfu Zhang, Jingjing Chang, Yue Hao (2017). High-Performance Simple-Structured Planar Heterojunction Perovskite Solar Cells Achieved by Precursor Optimization. ACS Omega.DOI
1474. Siqing Zhang, Yan Liu, Yao Shao, Cizhe Fang, Genquan Han, Jincheng Zhang, Yue Hao (2017). Simulation investigation of strained black phosphorus photodetector for middle infrared range. Optics Express.DOI
1475. Jinfeng Zhang, Zeyang Ren, Jincheng Zhang, Chun-fu Zhang, Da-Zheng Chen, Shengrui Xu, Yao Li, Yue Hao (2017). Characterization and mobility analysis of MoO 3 -gated diamond MOSFET. Japanese Journal of Applied Physics.DOI
1476. Jing Li, Jiuren Zhou, Genquan Han, Yan Liu, Yue Peng, Jincheng Zhang, Qingqing Sun, David Wei Zhang, Yue Hao (2017). Correlation of Gate Capacitance with Drive Current and Transconductance in Negative Capacitance Ge PFETs. IEEE Electron Device Letters.DOI
1477. Yang Li, Lin‐An Yang, Hao Zou, Hengshuang Zhang, Xiaohua Ma, Yue Hao (2017). Substrate Integrated Waveguide Structural Transmission Line and Filter on Silicon Carbide Substrate. IEEE Electron Device Letters.DOI
1478. Dong Wang, Jing Ning, Jincheng Zhang, Lixin Guo, Yue Hao (2017). Investigation of dielectric substrates on electrical and optical performance of wafer-scale graphene using non-contact methods. Semiconductor Science and Technology.DOI
1479. Zhenhua Lin, Jingjing Chang, Hai Zhu, Qing‐Hua Xu, Chunfu Zhang, Jianyong Ouyang, Yue Hao (2017). Enhanced planar heterojunction perovskite solar cell performance and stability using PDDA polyelectrolyte capping agent. Solar Energy Materials and Solar Cells.DOI
1480. Haifeng Yang, Jincheng Zhang, Chunfu Zhang, Jingjing Chang, Zhenhua Lin, Dazheng Chen, He Xi, Yue Hao (2017). Effects of Annealing Conditions on Mixed Lead Halide Perovskite Solar Cells and Their Thermal Stability Investigation. Materials.DOI
1481. Yang Li, Lin‐An Yang, Lin Du, Kunzhe Zhang, Yue Hao (2017). Design of Millimeter-Wave Resonant Cavity and Filter Using 3-D Substrate-Integrated Circular Waveguide. IEEE Microwave and Wireless Components Letters.DOI
1482. Zeyang Ren, Jinfeng Zhang, Jincheng Zhang, Chunfu Zhang, Dazheng Chen, Pengzhi Yang, Yao Li, Yue Hao (2017). Polycrystalline Diamond MOSFET With MoO 3 Gate Dielectric and Passivation Layer. IEEE Electron Device Letters.DOI
1483. Junpeng Fang, Ying Wang, Yue Hao, Jun Liu, Lingling Sun (2017). Hardening of Split-Gate Power UMOSFET Against High-Power Microwave Radiation. IEEE Electron Device Letters.DOI
1484. Shangzheng Pang, Dazheng Chen, Chunfu Zhang, Jingjing Chang, Zhenhua Lin, Haifeng Yang, Xu Sun, Jiajie Mo, He Xi, Genquan Han, Jincheng Zhang, Yue Hao (2017). Efficient bifacial semitransparent perovskite solar cells with silver thin film electrode. Solar Energy Materials and Solar Cells.DOI
1485. Jiuren Zhou, Genquan Han, Yue Peng, Yan Liu, Jincheng Zhang, Qingqing Sun, David Wei Zhang, Yue Hao (2017). Ferroelectric Negative Capacitance GeSn PFETs With Sub-20 mV/decade Subthreshold Swing. IEEE Electron Device Letters.DOI
1486. Heng Li, Xiaoli Lu, Xin Li, Jincheng Zhang, Yue Hao (2017). High Quality Transferable AlN Thin Film by PLD. Journal of Physics Conference Series.DOI
1487. Lin Du, Shengrui Xu, Ying Wang, Ling Lü, Jincheng Zhang, Yue Hao (2017). Investigation of etching method for fabricating deep through holes on ultra-high resistivity silicon. Journal of Semiconductors.DOI
1488. Shangzheng Pang, Chunfu Zhang, Dazheng Chen, Yue Hao (2017). Improved planar perovskite solar cells using the modified hole transporting layer and solvent annealing. Journal of Physics Conference Series.DOI
1489. Ruizhi Peng, Chunfuzhang, Genquan Han, Yue Hao (2017). Strong quantum-confined Stark effect in a lattice-matched GeSiSn/GeSn multi-quantum-well structure. Journal of Physics Conference Series.DOI
1490. Wei Yu, Kaixuan Wang, Bin Guo, Xueqing Qiu, Yue Hao, Jingjing Chang, Yuan Li (2017). Effect of ultraviolet absorptivity and waterproofness of poly(3,4-ethylenedioxythiophene) with extremely weak acidity, high conductivity on enhanced stability of perovskite solar cells. Journal of Power Sources.DOI
1491. Zhenhua Lin, Jingjing Chang, Chunfu Zhang, Dazheng Chen, Jishan Wu, Yue Hao (2017). Enhanced Performance and Stability of Polymer Solar Cells by In Situ Formed AlOx Passivation and Doping. The Journal of Physical Chemistry C.DOI
1492. Zeyang Ren, Jinfeng Zhang, Jincheng Zhang, Chunfu Zhang, Shengrui Xu, Yao Li, Yue Hao (2017). Diamond Field Effect Transistors With MoO3Gate Dielectric. IEEE Electron Device Letters.DOI
1493. Hailong You, Junchi Zhang, Zeyulin Zhang, Chunfu Zhang, Zhenhua Lin, Jingjing Chang, Genquan Han, Jincheng Zhang, Gang Lü, Yue Hao (2017). Low Temperature Aqueous Solution-Processed ZnO and Polyethylenimine Ethoxylated Cathode Buffer Bilayer for High Performance Flexible Inverted Organic Solar Cells. Energies.DOI
1494. Qian Feng, Xiang Li, Genquan Han, Lu Huang, Fuguo Li, Weihua Tang, Jincheng Zhang, Yue Hao (2017). (AlGa)_2O_3 solar-blind photodetectors on sapphire with wider bandgap and improved responsivity. Optical Materials Express.DOI
1495. Hongjuan Wang, Genquan Han, Xiangwei Jiang, Yan Liu, Chunfu Zhang, Jincheng Zhang, Yue Hao (2017). Performance enhancement in uniaxially tensile stressed GeSn n-channel fin tunneling field-effect transistor: Impact of stress direction. Japanese Journal of Applied Physics.DOI
1496. Hong Wang, Xiaohua Ma, Yue Hao (2017). Electronic Devices for Human‐Machine Interfaces. Advanced Materials Interfaces.DOI
1497. Yan Liu, Yibo Wang, Genquan Han, Yao Shao, Cizhe Fang, Siqing Zhang, Yan Huang, Jincheng Zhang, Yue Hao (2017). Engineering rainbow trapping and releasing in ultrathin THz plasmonic graded metallic grating strip with thermo-optic material. Optics Express.DOI
1498. Jiaduo Zhu, Jincheng Zhang, Shengrui Xu, Yue Hao (2017). Unintentional doping effects in black phosphorus by native vacancies in h-BN supporting layer. Applied Surface Science.DOI
1499. Jiajie Mo, Chunfu Zhang, Jingjing Chang, Haifeng Yang, He Xi, Dazheng Chen, Zhenhua Lin, Gang Lü, Jincheng Zhang, Yue Hao (2017). Enhanced efficiency of planar perovskite solar cells via a two-step deposition using DMF as an additive to optimize the crystal growth behavior. Journal of Materials Chemistry A.DOI
1500. Long Zhou, Jingjing Chang, Zhenhua Lin, Chunfu Zhang, Dazheng Chen, Jincheng Zhang, Yue Hao (2017). Investigation of Fe 2+ -incorporating organic–inorganic hybrid perovskites from first principles and experiments. RSC Advances.DOI
1501. Zhizhe Wang, Dazheng Chen, Chunfu Zhang, Zhenhua Lin, Yan Liu, Genquan Han, Jingjing Chang, Jincheng Zhang, Lixin Guo, Yue Hao (2017). Efficient Inverted ITO-Free Organic Solar Cells Based on Transparent Silver Electrode with Aqueous Solution-Processed ZnO Interlayer. International Journal of Photoenergy.DOI
1502. Zhuangzhuang Hu, Qian Feng, Jincheng Zhang, Fuguo Li, Xiang Li, Zhaoqing Feng, Chunfu Zhang, Yue Hao (2017). Optical properties of (Al Ga1-)2O3 on sapphire. Superlattices and Microstructures.DOI
1503. Zeyang Ren, Jinfeng Zhang, Jincheng Zhang, Chunfu Zhang, Dazheng Chen, Ru-Dai Quan, Jiayin Yang, Zhiyu Lin, Yue Hao (2017). Polycrystalline diamond RF MOSFET with MoO3 gate dielectric. AIP Advances.DOI
1504. Jiuren Zhou, Genquan Han, Jing Li, Yue Peng, Yan Liu, Jincheng Zhang, Qingqing Sun, David Wei Zhang, Yue Hao (2017). Comparative Study of Negative Capacitance Ge pFETs With HfZrOxPartially and Fully Covering Gate Region. IEEE Transactions on Electron Devices.DOI
1505. Zhaoqing Feng, Qian Feng, Jincheng Zhang, Xiang Li, Fuguo Li, Lu Huang, Hong‐Yan Chen, Hong-Liang Lü, Yue Hao (2017). Band alignment of SiO2/(Al Ga1-)2O3 (0 ≤x≤ 0.49) determined by X-ray photoelectron spectroscopy. Applied Surface Science.DOI
1506. Jiuren Zhou, Yichun Zhou, Yue Hao, Yue Peng, Genquan Han, Qinglong Li, Yan Liu, Jincheng Zhang, Min Liao, Qingqing Sun, David Wei Zhang (2017). Hysteresis Reduction in Negative Capacitance Ge PFETs Enabled by Modulating Ferroelectric Properties in HfZrO x. IEEE Journal of the Electron Devices Society.DOI
1507. Yingzhe Wang, Xuefeng Zheng, Feng Dai, Jiaduo Zhu, Peixian Li, Xiaohua Ma, Yue Hao (2017). Influence of constant current stress on the conduction mechanisms of reverse leakage current in UV-A light emitting diodes. Superlattices and Microstructures.DOI
1508. Kaiwen Pu, Xianying Dai, Dongming Miao, Shujing Wu, Tianlong Zhao, Yue Hao (2017). A kinetics model for MOCVD deposition of AlN film based on Grove theory. Journal of Crystal Growth.DOI
1509. Lu Huang, Qian Feng, Genquan Han, Fuguo Li, Xiang Li, Liwei Fang, Xiangyu Xing, Jincheng Zhang, Yue Hao (2017). Comparison Study of β-Ga2O3 Photodetectors Grown on Sapphire at Different Oxygen Pressures. IEEE photonics journal.DOI
1510. Zhan Wang, Yong Jun Xie, Haolin Wang, Ruixue Wu, Nan Tang, Yongjie Zhan, Jing Wei Sun, Teng Jiang, Ying Zhao, Yimin Lei, Mei Yang, Weidong Wang, Qing Zhu, Xiaohua Ma, Yue Hao (2017). NaCl-assisted one-step growth of MoS 2 –WS 2 in-plane heterostructures. Nanotechnology.DOI
1511. Jing Ning, Dong Wang, Yang Chai, Xinliang Feng, Meishan Mu, Lixin Guo, Jincheng Zhang, Yue Hao (2017). Review on mechanism of directly fabricating wafer-scale graphene on dielectric substrates by chemical vapor deposition. Nanotechnology.DOI
1512. Meng Duan, Jian Fu Zhang, J. C. Zhang, Weidong Zhang, Zhigang Ji, B. Benbakhti, Xuefeng Zheng, Yue Hao, David Vigar, Fikru Adamu-Lema, Vikas Chandra, Robert C. Aitken, B. Kaczer, G. Groeseneken, Asen Asenov (2017). Interaction between hot carrier aging and PBTI degradation in nMOSFETs: Characterization, modelling and lifetime prediction. IEEE International Reliability Physics Symposium proceedings.DOI
1513. Wei Mao, Haiyong Wang, Xiaofei Wang, Ming Du, Jinfeng Zhang, Xue-Feng Zheng, Chong Wang, Xiaohua Ma, Jincheng Zhang, Yue Hao (2017). Improvement of reverse blocking performance in vertical power MOSFETs with Schottky–drain-connected semisuperjunctions. Chinese Physics B.DOI
1514. Yibo Wang, Yan Liu, Genquan Han, Hongjuan Wang, Chunfu Zhang, Jincheng Zhang, Yue Hao (2017). Theoretical investigation of GaAsBi/GaAsN tunneling field-effect transistors with type-II staggered tunneling junction. Superlattices and Microstructures.DOI
1515. Wenxiang Mu, Zhitai Jia, Yanru Yin, Qiangqiang Hu, Jian Zhang, Qian Feng, Yue Hao, Xutang Tao (2017). One-step exfoliation of ultra-smooth β-Ga 2 O 3 wafers from bulk crystal for photodetectors. CrystEngComm.DOI
1516. Ya-Song Zhang, Yan-Rong Cao, Peng Li, Feng Dai, Qing Zhu, Ling Lv, Xiao-Hua Ma, Yue Hao (2016). Investigation of the reverse voltage stress on the fluorine plasma treated AlGaN /GaN Schottky barrier diodes. 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology(ICSICT) Proceedings.
1517. Peng Li, Yan-Rong Cao, Feng Dai, Ya-Song Zhang, Qing Zhu, Ling Lv, Xiao-Hua Ma, Yue Hao (2016). The influence mechanism of Al 2 O 3 layer and etching depth on 2DEG sheet density in gate-recessed Al 2 O 3 /AlGaN/GaN MOS-HEMTs. 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology(ICSICT) Proceedings.
1518. Ying Zhao, Shengrui Xu, Zhiyu Lin, Jincheng Zhang, Teng Jiang, Meng-Di Fu, Jiaduo Zhu, Qin Lu, Yue Hao (2016). C-Implanted N-Polar GaN Films Grown by Metal Organic Chemical Vapor Deposition. Chinese Physics Letters.DOI
1519. Chong Wang, Mengdi Zhao, Yunlong He, Xue-Feng Zheng, Kun Zhang, Xiaoxiao Wei, Wei Mao, Xiaohua Ma, Jincheng Zhang, Yue Hao (2016). Photoresponse and trap characteristics of transparent AZO-gated AlGaN/GaN HEMT. Chinese Physics B.DOI
1520. 祝宁华，李明，郝跃（2016）. 光电子器件与集成技术. 《中国科学:信息科学》.
1521. Yunlong He, Chong Wang, Minhan Mi, Xue-Feng Zheng, Meng Zhang, Mengdi Zhao, Hengshuang Zhang, Lixiang Chen, Jincheng Zhang, Xiaohua Ma, Yue Hao (2016). Recessed-gate quasi-enhancement-mode AlGaN/GaN high electron mobility transistors with oxygen plasma treatment. Chinese Physics B.DOI
1522. Wei Mao, Ju-Sheng Fan, Ming Du, Jinfeng Zhang, Xue-Feng Zheng, Chong Wang, Xiaohua Ma, Jincheng Zhang, Yue Hao (2016). Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate. Chinese Physics B.DOI
1523. Yachao Zhang, Xiaowei Zhou, Shengrui Xu, Da-Zheng Chen, Zhizhe Wang, Xing Wang, Jinfeng Zhang, Jincheng Zhang, Yue Hao (2016). Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition. Chinese Physics B.DOI
1524. 王冲，魏晓晓，何云龙，郑雪峰，马晓华，张进成，郝跃 (2016). Effects of the fluorine plasma treatment on low-density drain AlGaN/GaN HEMT. Journal of Semiconductors.
1525. 韩根全，张春福，张进成，成步文，郝跃（2016）. 非硅微电子学:锗与锗锡场效应晶体管. 《中国科学:物理学 力学 天文学》.
1526. Wei Mao, Wei-Bo She, Cui Yang, Jinfeng Zhang, Xuefeng Zheng, Chong Wang, Yue Hao (2016). Reverse blocking characteristics and mechanisms in Schottky-drain AlGaN/GaN HEMT with a drain field plate and floating field plates. Chinese Physics B.DOI
1527. Jun Luo, Shenglei Zhao, Minhan Mi, Weiwei Chen, Bin Hou, Jincheng Zhang, Xiaohua Ma, Yue Hao (2016). Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor. Chinese Physics B.DOI
1528. Qing Zhu, Xiao‐Hua Ma, Weiwei Chen, Bin Hou, Jiejie Zhu, Meng Zhang, Lixiang Chen, Yanrong Cao, Yue Hao (2016). Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure. Chinese Physics B.DOI
1529. Xiaoling Duan, Jincheng Zhang, Ming Xiao, Yi Zhao, Jing Ning, Yue Hao (2016). Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures. Chinese Physics B.DOI
1530. Bo-Chao Zhao, Yang Lu, Wen-Zhe Han, Jia-Xin Zheng, Heng-Shuang Zhang, Pei-Jun Ma, Xiao-Hua Ma, Yue Hao (2016). X-band inverse class-F GaN internally-matched power amplifier.DOI
1531. Rudai Quan, Jin-Cheng Zhang, Sheng-Rui Xu, Jun-Shuai Xue, Yi Zhao, Jing Ning, Zhiyu Lin, Ze-Yang Ren, Yue Hao (2016). Growth of InAlGaN Quaternary Alloys by Pulsed Metalorganic Chemical Vapor Deposition.DOI
1532. Shengrui Xu, Ying Zhao, Teng Jiang, Jincheng Zhang, Peixian Li, Yue Hao (2016). Improved Semipolar (1122) GaN Quality Grown on m -Plane Sapphire Substrates by Metal Organic Chemical Vapor Deposition Using Self-Organized SiN x Interlayer. Chinese Physics Letters.DOI
1533. Jun Luo, Sheng-Lei Zhao, Zhiyu Lin, Jin-Cheng Zhang, Xiao-Hua Ma, Yue Hao (2016). Enhancement of Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors Using Double Buried p-Type Layers.DOI
1534. Rudai Quan, Jin-Cheng Zhang, Jun-Shuai Xue, Yi Zhao, Jing Ning, Zhiyu Lin, Ya-Chao Zhang, Ze-Yang Ren, Yue Hao (2016). Fabrication of GaN-Based Heterostructures with an InAlGaN/AlGaN Composite Barrier.DOI
1535. Rudai Quan, Jin-Cheng Zhang, Ya-Chao Zhang, Weihang Zhang, Ze-Yang Ren, Yue Hao (2016). Fabrication of InAlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates by Pulsed Metal Organic Chemical Vapor Deposition.DOI
1536. Xiao-Li Lu, Heng Li, Xin Li, Ji-Wen Zhang, Jin-Cheng Zhang, Yue Hao, M. Alexe (2016). Multiferroics for Spintronics.DOI
1537. Ya-Chao Zhang, Xiao-Wei Zhou, Sheng-Rui Xu, Jinfeng Zhang, Jin-Cheng Zhang, Yue Hao (2016). Superior transport properties of InGaN channel heterostructure with high channel electron mobility.DOI
1538. Rudai Quan, Jin-Cheng Zhang, Jun-Shuai Xue, Yi Zhao, Jing Ning, Zhiyu Lin, Ya-Chao Zhang, Ze-Yang Ren, Yue Hao（2016）. InAlGaN/AlGaN複合障壁を有するGaN系ヘテロ構造の作製【Powered by NICT】.
1539. Yong-He Chen, Xue-Feng Zheng, Jin-Cheng Zhang, Xiao-Hua Ma, Yue Hao (2016). Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMTs SRAM unit and voltage level shifter using fluorine plasma treatment.DOI
1540. Zhibin Chen, Jincheng Zhang, Shengrui Xu, JunShuai Xue, Teng Jiang, Yue Hao (2016). Influence of stacking faults on the quality of GaN films grown on sapphire substrate using a sputtered AlN nucleation layer. Materials Research Bulletin.DOI
1541. Yang Lu, Bochao Zhao, Jiaxin Zheng, H.S. Zhang, Xuefeng Zheng, Xiaohua Ma, Yue Hao, Peijun Ma (2016). A high efficiency C-band internally-matched harmonic tuning GaN power amplifier. Solid-State Electronics.DOI
1542. Ming Xiao, Jincheng Zhang, Xiaoling Duan, Hengsheng Shan, Ting Yu, Jing Ning, Yue Hao (2016). A partly-contacted epitaxial lateral overgrowth method applied to GaN material. Scientific Reports.DOI
1543. Ying Wang, Lin‐An Yang, Zhizhe Wang, Yue Hao (2016). Modulation of the domain mode in GaN‐based planar Gunn diode for terahertz applications. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics.DOI
1544. Yan-juan Liu, Ying Wang, Yue Hao, Chenghao Yu, Fei Cao (2016). 4H-SiC Trench IGBT With Back-Side n-p-n Collector for Low Turn-OFF Loss. IEEE Transactions on Electron Devices.DOI
1545. Teng Jiang, Shengrui Xu, Jincheng Zhang, Peixian Li, Jun Huang, Mutong Niu, Xijun Meng, Zhibin Chen, Jiaduo Zhu, Ying Zhao, Yachao Zhang, Yue Hao (2016). Temperature dependence of the Raman-active modes in the semipolar (112¯2) plane GaN Film. Journal of Applied Physics.DOI
1546. Chong Wang, Mengdi Zhao, Yunlong He, Xue-Feng Zheng, Xiaoxiao Wei, Wei Mao, Xiaohua Ma, Jincheng Zhang, Yue Hao (2016). Optimization of ohmic contact for AlGaNGaN HEMT by introducing patterned etching in ohmic area. Solid-State Electronics.DOI
1547. Ming Xiao, Jincheng Zhang, Yue Hao (2016). High-quality Ga-rich AlGaN grown on trapezoidal patterned GaN template using super-short period AlN/GaN superlattices for rapid coalescence. Journal of Crystal Growth.DOI
1548. Yunlong He, Shaopeng Zhai, Minhan Mi, Xiaowei Zhou, Xuefeng Zheng, Meng Zhang, Peng Zhang, Ling Yang, Chong Wang, Xiaohua Ma, Yue Hao (2016). A physics‐based threshold voltage model of AlGaN/GaN nanowire channel high electron mobility transistor. physica status solidi (a).DOI
1549. Shengrui Xu, Teng Jiang, Zhiyu Lin, Ying Zhao, Linan Yang, Jincheng Zhang, Peixian Li, Yue Hao (2016). Current mapping of nonpolar a-plane and polar c-plane GaN films by conductive atomic force microscopy. Journal of Crystal Growth.DOI
1550. Qing Chen, Lin’an Yang, Shulong Wang, Yue Hao (2016). Effect of temperature on avalanche region width and DC to RF conversion efficiency of the p+nn−n+ 4H–SiC impact avalanche transit time diodes. Applied Physics A.DOI
1551. Yang Dai, Lin’an Yang, Qing Chen, Ying Wang, Yue Hao (2016). Enhancement of the performance of GaN IMPATT diodes by negative differential mobility. AIP Advances.DOI
1552. Shenglei Zhao, Fu Xiaojun, Fan Liu, Luncai Liu, Jun Luo, Gangyi Hu, Xiaohua Ma, Jincheng Zhang, Yue Hao (2016). Mechanism of breakdown enhancement in AlGaN/GaN HEMTs using a high-k passivation layer. IEEE International Nanoelectronics Conference.DOI
1553. Lin'an Yang, Yue Li, Ying Wang, Shengrui Xu, Yue Hao (2016). Asymmetric quantum-well structures for AlGaN/GaN/AlGaN resonant tunneling diodes. Journal of Applied Physics.DOI
1554. Ying Wang, Kai Tian, Yue Hao, Chenghao Yu, Yan-juan Liu (2016). 4H–SiC Step Trench Gate Power Metal–Oxide–Semiconductor Field-Effect Transistor. IEEE Electron Device Letters.DOI
1555. Yue Peng, Genquan Han, Hongjuan Wang, Chunfu Zhang, Yan Liu, Yibo Wang, Shenglei Zhao, Jincheng Zhang, Yue Hao (2016). InN/InGaN complementary heterojunction-enhanced tunneling field-effect transistor with enhanced subthreshold swing and tunneling current. Superlattices and Microstructures.DOI
1556. Weihang Zhang, Xiangdong Li, Jincheng Zhang, Haiqing Jiang, Xin Xu, Zhenxing Guo, Ren-Yuan Jiang, Yu Zou, Yunlong He, Yue Hao (2016). Overcoming the poor crystal quality and DC characteristics of AlGaN/GaN/AlGaN double‐heterostructure high electron mobility transistors. physica status solidi (a).DOI
1557. Teng Jiang, Shengrui Xu, Jincheng Zhang, Peixian Li, Jun Huang, Zeyang Ren, Jiaduo Zhu, Zhibin Chen, Ying Zhao, Yue Hao (2016). Morphological dependent Indium incorporation in InGaN/GaN multiple quantum wells structure grown on 4° misoriented sapphire substrate. AIP Advances.DOI
1558. Teng Jiang, Shengrui Xu, Jin-cheng Zhang, Yong Jun Xie, Yue Hao (2016). Spatially resolved and orientation dependent Raman mapping of epitaxial lateral overgrowth nonpolar a-plane GaN on r-plane sapphire. Scientific Reports.DOI
1559. Minhan Mi, Yunlong He, Bin Hou, Meng Zhang, Jincheng Zhang, Chong Wang, Xiaohua Ma, Yue Hao (2016). Threshold voltage engineering in GaN‐based HEMT by using La2O3 gate dielectric. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics.DOI
1560. JunShuai Xue, Jincheng Zhang, Yue Hao (2016). Demonstration of InAlN/AlGaN high electron mobility transistors with an enhanced breakdown voltage by pulsed metal organic chemical vapor deposition. Applied Physics Letters.DOI
1561. Yang Li, Lin‐An Yang, Shaobo Wang, Lin Du, Yue Hao (2016). Design of 3D filtering antenna for the application of terahertz. Electronics Letters.DOI
1562. Genquan Han, Qingfang Zhang, Yan Liu, Chunfu Zhang, Yue Hao (2016). GeSn/SiGeSn photonic devices for mid-infrared applications: experiments and calculations. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE.DOI
1563. Feng Dai, Xue-Feng Zheng, Peixian Li, Xiao-Hui Hou, Yingzhe Wang, Yanrong Cao, Xiaohua Ma, Yue Hao (2016). The Transport Mechanisms of Reverse Leakage Current in Ultraviolet Light-Emitting Diodes. Chinese Physics Letters.DOI
1564. Ning Li, Dazheng Chen, Chunfu Zhang, Jingjing Chang, Zhenhua Lin, Genquan Han, Jincheng Zhang, Lixin Guo, Yue Hao (2016). High-Performance Low-Bandgap Polymer Solar Cells With Optical Microcavity Employing Ultrathin Ag Film Electrode. IEEE photonics journal.DOI
1565. Haifeng Yang, Jincheng Zhang, Chunfu Zhang, Jingjing Chang, Zhenhua Lin, Dazheng Chen, Xu Sun, He Xi, Genquan Han, Yue Hao (2016). Effect of polyelectrolyte interlayer on efficiency and stability of p-i-n perovskite solar cells. Solar Energy.DOI
1566. Hongjuan Wang, Genquan Han, Yibo Wang, Yan Liu, Chunfu Zhang, Jincheng Zhang, Yue Hao (2016). High mobility ultrathin Ge and GeSn channel pMOSFETs fabricated on Si platform. IEEE International Conference on Solid-State and Integrated Circuit Technology.DOI
1567. Xu Sun, Chunfu Zhang, Jingjing Chang, Haifeng Yang, He Xi, Gang Lü, Dazheng Chen, Zhenhua Lin, Xiaoli Lu, Jincheng Zhang, Yue Hao (2016). Mixed-solvent-vapor annealing of perovskite for photovoltaic device efficiency enhancement. Nano Energy.DOI
1568. Zhenhua Lin, Jingjing Chang, Juanxiu Xiao, Hai Zhu, Qing‐Hua Xu, Chunfu Zhang, Jianyong Ouyang, Yue Hao (2016). Interface studies of the planar heterojunction perovskite solar cells. Solar Energy Materials and Solar Cells.DOI
1569. Mei Yang, Xiaohua Ma, Hong Wang, He Xi, Ling Lv, Peng Zhang, Yong Jun Xie, Haixia Gao, Yanrong Cao, Shuwei Li, Yue Hao (2016). Evolution of resistive switching and its ionic models in Pt/Nb-doped SrTiO3junctions. Materials Research Express.DOI
1570. Jiaduo Zhu, Jincheng Zhang, Yue Hao (2016). Tunable schottky barrier in blue phosphorus–graphene heterojunction with normal strain. Japanese Journal of Applied Physics.DOI
1571. Hong Wang, Bowen Zhu, Hua Wang, Xiaohua Ma, Yue Hao, Xiaodong Chen (2016). Ultra‐Lightweight Resistive Switching Memory Devices Based on Silk Fibroin. Small.DOI
1572. Hong Wang, Bowen Zhu, Xiaohua Ma, Yue Hao, Xiaodong Chen (2016). Resistive Switching: Physically Transient Resistive Switching Memory Based on Silk Protein (Small 20/2016). Small.DOI
1573. Hong Wang, Bowen Zhu, Xiaohua Ma, Yue Hao, Xiaodong Chen (2016). Physically Transient Resistive Switching Memory Based on Silk Protein. Small.DOI
1574. Hongjuan Wang, Genquan Han, Yibo Wang, Yue Peng, Yan Liu, Chunfu Zhang, Jincheng Zhang, Shengdong Hu, Yue Hao (2016). Theoretical calculation of performance enhancement in lattice-matched SiGeSn/GeSn p-channel tunneling field-effect transistor with type-II staggered tunneling junction. Japanese Journal of Applied Physics.DOI
1575. Jingjing Chang, Zhenhua Lin, Hai Zhu, Furkan Halis Isikgor, Qing‐Hua Xu, Chunfu Zhang, Yue Hao, Jianyong Ouyang (2016). Enhancing the photovoltaic performance of planar heterojunction perovskite solar cells by doping the perovskite layer with alkali metal ions. Journal of Materials Chemistry A.DOI
1576. Jingjing Chang, Hai Zhu, Juanxiu Xiao, Furkan Halis Isikgor, Zhenhua Lin, Yue Hao, Kaiyang Zeng, Qing‐Hua Xu, Jianyong Ouyang (2016). Enhancing the planar heterojunction perovskite solar cell performance through tuning the precursor ratio. Journal of Materials Chemistry A.DOI
1577. Genquan Han, Yibo Wang, Yan Liu, Chunfu Zhang, Qian Feng, Mingshan Liu, Shenglei Zhao, Buwen Cheng, Jincheng Zhang, Yue Hao (2016). GeSn Quantum Well P-Channel Tunneling FETs Fabricated on Si(001) and (111) with Improved Subthreshold Swing. IEEE Electron Device Letters.DOI
1578. Jingjing Chang, Juanxiu Xiao, Zhenhua Lin, Hai Zhu, Qing‐Hua Xu, Kaiyang Zeng, Yue Hao, Jianyong Ouyang (2016). Elucidating the charge carrier transport and extraction in planar heterojunction perovskite solar cells by Kelvin probe force microscopy. Journal of Materials Chemistry A.DOI
1579. Zhenhua Lin, Jingjing Chang, Chunfu Zhang, Jincheng Zhang, Jishan Wu, Yue Hao (2016). Low temperature aqueous solution-processed Li doped ZnO buffer layers for high performance inverted organic solar cells. Journal of Materials Chemistry C.DOI
1580. Bochao Zhao, Peijun Ma, Lu Yang, Jiaxin Zheng, Hengshuang Zhang, Zuochen Shi, Xiaohua Ma, Yue Hao (2016). A novel graphical method for dual-frequency two sections transformer. IEICE Electronics Express.DOI
1581. Hengshuang Zhang, Peijun Ma, Yang Lu, Bochao Zhao, Jiaxin Zheng, Xiaohua Ma, Yue Hao (2016). Extraction method for parasitic capacitances and inductances of HEMT models. Solid-State Electronics.DOI
1582. Jiajie Mo, He Xi, Jingjing Chang, Chunfu Zhang, Yue Hao (2016). 1.1% DMF incorporation in MAI/IPA precursor for 50% efficiency enhancement of planar perovskite solar cells. IEEE International Conference on Solid-State and Integrated Circuit Technology.DOI
1583. Qian Feng, Lu Huang, Genquan Han, Fuguo Li, Xiang Li, Liwei Fang, Xiangyu Xing, Jincheng Zhang, Wenxiang Mu, Zhitai Jia, Daoyou Guo, Weihua Tang, Xutang Tao, Yue Hao (2016). Comparison Study of $\beta $ -Ga2O3Photodetectors on Bulk Substrate and Sapphire. IEEE Transactions on Electron Devices.DOI
1584. Yue Hao, Chun-fu Zhang, Genquan Han, JingCheng ZHANG, Buwen Cheng (2016). Non-Silicon microelectronics: Germanium and Germanium-Tin field-effect transistors. Zhongguo kexue. Wulixue Lixue Tianwenxue.DOI
1585. Ninghua Zhu, Yue Hao, Ming Li (2016). Optoelectronic devices and integration technologies. Scientia Sinica Informationis.DOI
1586. Xiaofei Wang, Hong Zhang, Jie Zhang, Xin Du, Yue Hao (2016). A SHA-less 14-bit, 100-MS/s pipelined ADC with comparator offset cancellation in background. Journal of Semiconductors.DOI
1587. Minhan Mi, Kai Zhang, Shenglei Zhao, Chong Wang, Jincheng Zhang, Xiaohua Ma, Yue Hao (2015). Improved performance of AlGaN/GaN HEMT by N 2 O plasma pre-treatment. Chinese Physics B.DOI
1588. Xiangdong Li, Jin-Cheng Zhang, Yu Zou, Xue-Zhi Ma, Chang Liu, Weihang Zhang, Hui-Juan Wen, Yue Hao (2015). AlGaN Channel High Electron Mobility Transistors with an AlxGa1−xN/GaN Composite Buffer Layer.DOI
1589. Teng Jiang, Sheng-Rui Xu, Jin-Cheng Zhang, Zhiyu Lin, Ren-Yuan Jiang, Yue Hao (2015). Growth of a-Plane GaN Films on r-Plane Sapphire by Combining Metal Organic Vapor Phase Epitaxy with the Hydride Vapor Phase Epitaxy.DOI
1590. Ren-Yuan Jiang, Shengrui Xu, Jincheng Zhang, Teng Jiang, Haiqing Jiang, Zhizhe Wang, Yong-Xiang Fan, Yue Hao (2015). Morphological and Microstructural Evolution and Related Impurity Incorporation in Non-Polar a -Plane GaN Grown on r-Sapphire Substrates. Chinese Physics Letters.DOI
1591. Xiangdong Li, Jin-Cheng Zhang, Zhen-Xing Guo, Hai-Qing Jiang, Yu Zou, Weihang Zhang, Yunlong He, Ren-Yuan Jiang, Sheng-Lei Zhao, Yue Hao (2015). Al0.30Ga0.70N/GaN/Al0.07Ga0.93N Double Heterostructure High Electron Mobility Transistors with a Record Saturation Drain Current of 1050mA/mm.DOI
1592. Peng Zhang, Sheng-Lei Zhao, Jun-Shuai Xue, Jiejie Zhu, Xiao-Hua Ma, Jin-Cheng Zhang, Yue Hao (2015). Investigation of trap states in Al2O3 InAlN/GaN metal–oxide–semiconductor high-electron-mobility transistors.DOI
1593. Jiaxin Zheng, Xiaohua Ma, Yang Lu, Bochao Zhao, Hong-He Zhang, Meng Zhang, Mengyi Cao, Yue Hao (2015). A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT. Chinese Physics B.DOI
1594. Jun Luo, Sheng-Lei Zhao, Min-Han Mi, Bin Hou, Xiao-Lei Yang, Jin-Cheng Zhang, Xiao-Hua Ma, Yue Hao (2015). Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors.DOI
1595. 张鹏，赵胜雷，侯斌，王冲，郑雪峰，马晓华，张进成，郝跃 (2015). Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors. Chinese Physics B.
1596. Yi Zhao, Jincheng Zhang, JunShuai Xue, Xiaowei Zhou, Shengrui Xu, Yue Hao (2015). Influence of compressive strain on the incorporation of indium in InGaN and InAlN ternary alloys. Chinese Physics B.DOI
1597. Wei-Wei Sun, Xuefeng Zheng, Shuang Fan, Chong Wang, Ming Du, Kai Zhang, Wei-Wei Chen, Yanrong Cao, Wei Mao, Xiao-Hua Ma, Jin-Cheng Zhang, Yue Hao (2015). Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress.DOI
1598. Xuefeng Zheng, Shuang Fan, Yong-He Chen, Di Kang, Jian-Kun Zhang, Chong Wang, Jiang-Hui Mo, Liang Li, Xiao-Hua Ma, Jin-Cheng Zhang, Yue Hao (2015). Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation.DOI
1599. 力 陆小，Ji-Wen Zhang，Chun-Fu Zhang，Jin-Cheng Zhang，Yue Hao (2015). Preparing a multilayer transfer process and barium titanate multilayer magnetic iron-cobalt composite film.
1600. Bo-Chao Zhao, Yang Lu, Jia-Xing Wei, Liang Dong, Yi Wang, M. Cao, Xiao-Hua Ma, Yue Hao (2015). Analysis of the third harmonic for class-F power amplifiers with an I–V knee effect.DOI
1601. Jiejie Zhu, Xiaohua Ma, Weiwei Chen, Bin Hou, Yong Jun Xie, Yue Hao (2015). Comparative study on interface and bulk charges in AlGaN/GaN metal–insulator–semiconductor heterostructures with Al 2 O 3 , AlN, and Al 2 O 3 /AlN laminated dielectrics. Japanese Journal of Applied Physics.DOI
1602. Yunlong He, Peixian Li, Chong Wang, Xiangdong Li, Shenglei Zhao, Minhan Mi, Jiuqing Pei, Jincheng Zhang, Xiaohua Ma, Yue Hao (2015). Trap states in enhancement-mode double heterostructures AlGaN/GaN high electron mobility transistors with different GaN channel layer thicknesses. Applied Physics Letters.DOI
1603. Yi Zhao, JunShuai Xue, Jin Cheng Zhang, Xiao Wei Zhou, Ya Chao Zhang, Yue Hao (2015). InAlN/InGaN/GaN double heterostructure with improved carrier confinement and high-temperature transport performance grown by metal-organic chemical vapor deposition. Semiconductor Science and Technology.DOI
1604. Hongjuan Wang, Genquan Han, Yan Liu, Mingshan Liu, Chunfu Zhang, Jincheng Zhang, Xiaohua Ma, Yue Hao (2015). Germanium-Tin P-channel tunneling field-effect transistors: Impacts of biaxial tensile strain and surface orientation. International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).DOI
1605. Xiangdong Li, Weihang Zhang, Mengdi Fu, Jincheng Zhang, Haiqing Jiang, Zhenxing Guo, Yu Zou, Ren-Yuan Jiang, Zuochen Shi, Yue Hao (2015). AlGaN channel MIS-HEMTs with a very high breakdown electric field and excellent high-temperature performance. IEICE Electronics Express.DOI
1606. Bochao Zhao, Xiaohua Ma, Yang Lu, Jiaxin Zheng, Wenzhe Han, Honghe Zhang, Yanlong Zhang, Yue Hao (2015). A 5–8 GHz wideband 100 W internally matched GaN power amplifier. IEICE Electronics Express.DOI
1607. Ying Wang, Lin‐An Yang, Zhizhe Wang, Jin‐Ping Ao, Yue Hao (2015). The enhancement of the output characteristics in the GaN based multiple‐channel planar Gunn diode. physica status solidi (a).DOI
1608. Ying Wang, Lin’an Yang, Zhizhe Wang, Jin‐Ping Ao, Yue Hao (2015). The modulation of multi-domain and harmonic wave in a GaN planar Gunn diode by recess layer. Semiconductor Science and Technology.DOI
1609. Yachao Zhang, Xiaowei Zhou, Shengrui Xu, Zhizhe Wang, Zhibin Chen, Jinfeng Zhang, Jincheng Zhang, Yue Hao (2015). Effects of growth temperature on the properties of InGaN channel heterostructures grown by pulsed metal organic chemical vapor deposition. AIP Advances.DOI
1610. Chong Wang, Yunlong He, Xuefeng Zheng, Mengdi Zhao, Minhan Mi, Xiangdong Li, Wei Mao, Xiaohua Ma, Yue Hao (2015). Low ohmic‐contact resistance in AlGaN/GaN high electron mobility transistors with holes etching in ohmic region. Electronics Letters.DOI
1611. Bin Hou, Xiaohua Ma, Weiwei Chen, Jiejie Zhu, Shenglei Zhao, Yonghe Chen, Yong Jun Xie, Jincheng Zhang, Yue Hao (2015). Using in-process measurements of open-gate structures to evaluate threshold voltage of normally-off GaN-based high electron mobility transistors. Applied Physics Letters.DOI
1612. Jingqian Liu, Jinyan Wang, Zhe Yuan Xu, Haisang Jiang, Zhenchuan Yang, Maojun Wang, Min Yu, Bing Xie, Wengang Wu, Xiaohua Ma, Jincheng Zhang, Yue Hao (2015). Locally non‐uniform oxidation in self‐terminating thermal oxidation assisted wet etching technique for AlGaN/GaN heterostructure. Electronics Letters.DOI
1613. Tao Gao, Ruimin Xu, Kai Zhang, Yuechan Kong, Jianjun Zhou, Cen Kong, Xun Dong, Tangsheng Chen, Yue Hao (2015). Dual-gate AlGaN/GaN MIS-HEMTs using Si3N4as the gate dielectric. Semiconductor Science and Technology.DOI
1614. YongHe Chen, Xiaohua Ma, Weiwei Chen, Bin Hou, Jincheng Zhang, Yue Hao (2015). Influence of the gate edge on the reverse leakage current of AlGaN/GaN HEMTs. AIP Advances.DOI
1615. Ling Lv, Xiaohua Ma, He Xi, Linyue Liu, Yanrong Cao, Jincheng Zhang, Hengsheng Shan, Yue Hao (2015). Theoretical analysis of proton irradiation effects on AlGaN/GaN high-electron-mobility transistors. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena.DOI
1616. JunShuai Xue, Jincheng Zhang, Yue Hao (2015). Ultrathin barrier AlN/GaN high electron mobility transistors grown at a dramatically reduced growth temperature by pulsed metal organic chemical vapor deposition. Applied Physics Letters.DOI
1617. Ying Wang, Kai Tian, Yue Hao, Chenghao Yu, Yan-Juan Liu (2015). An Optimized Structure of 4H-SiC U-Shaped Trench Gate MOSFET. IEEE Transactions on Electron Devices.DOI
1618. Jinfeng Zhang, Ran Yan, Guipeng Liu, Haonan Liu, Bei An, Yuhu Nie, Yue Hao (2015). Impact of charged basal stacking faults on the mobility of two-dimensional electron gas in nonpolara-plane AlGaN/GaN heterostructures. Semiconductor Science and Technology.DOI
1619. Sen Huang, Xinyu Liu, Jinhan Zhang, Ke Wei, Guoguo Liu, Xinhua Wang, Yingkui Zheng, Honggang Liu, Zhi Hao Jin, Chao Zhao, Cheng Liu, Shenghou Liu, Shu Yang, Jincheng Zhang, Yue Hao, Kevin Jing Chen (2015). High RF Performance Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated With High-Temperature Gate-Recess Technique. IEEE Electron Device Letters.DOI
1620. Yachao Zhang, Xiaowei Zhou, Shengrui Xu, Zhizhe Wang, Yi Zhao, Jinfeng Zhang, Dazheng Chen, Jincheng Zhang, Yue Hao (2015). Effects of interlayer growth condition on the transport properties of heterostructures with InGaN channel grown on sapphire by metal organic chemical vapor deposition. Applied Physics Letters.DOI
1621. Jingjing Chang, Hai Zhu, Bichen Li, Furkan Halis Isikgor, Yue Hao, Qing‐Hua Xu, Jianyong Ouyang (2015). Boosting the performance of planar heterojunction perovskite solar cell by controlling the precursor purity of perovskite materials. Journal of Materials Chemistry A.DOI
1622. Qian Feng, Fuguo Li, Bo Dai, Zhitai Jia, Wenlin Xie, Tong Xu, Xiaoli Lu, Xutang Tao, Jincheng Zhang, Yue Hao (2015). The properties of gallium oxide thin film grown by pulsed laser deposition. Applied Surface Science.DOI
1623. Qingfang Zhang, Yan Liu, Chunfu Zhang, Yue Hao, Genquan Han (2015). Tensile strained Ge0.90Sn0.10photodiode integrated with Si3N4liner stressor for mid-infrared applications. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE.DOI
1624. Chunfu Zhang, Shi Tang, Jing Yan, Zhizhe Wang, He Xi, Dazheng Chen, Haifeng Yang, Jincheng Zhang, Genquan Han, Yan Liu, Yue Hao (2015). Efficient planar heterojunction solar cell employing CH3NH3PbI2+xCl1−xmixed halide perovskite utilizing modified sequential deposition. Japanese Journal of Applied Physics.DOI
1625. Dazheng Chen, Chunfu Zhang, Wei Wei, Zhizhe Wang, Ting Heng, Shi Tang, Genquan Han, Jincheng Zhang, Yue Hao (2015). Stability of inverted organic solar cells with low‐temperature ZnO buffer layer processed from aqueous solution. physica status solidi (a).DOI
1626. Genquan Han, Yibo Wang, Yan Liu, Hongjuan Wang, Mingshan Liu, Chunfu Zhang, Jincheng Zhang, Buwen Cheng, Yue Hao (2015). Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain. AIP Advances.DOI
1627. Hong Wang, Wei Juan Wang, Pengxiao Sun, Xiaohua Ma, Ling Li, Ming Liu, Yue Hao (2015). Contact Length Scaling in Staggered Organic Thin-Film Transistors. IEEE Electron Device Letters.DOI
1628. Dazheng Chen, Chunfu Zhang, Ting Heng, Wei Wei, Zhizhe Wang, Genquan Han, Qian Feng, Yue Hao, Jincheng Zhang (2015). Efficient inverted polymer solar cells using low-temperature zinc oxide interlayer processed from aqueous solution. Japanese Journal of Applied Physics.DOI
1629. Zhizhe Wang, Chunfu Zhang, Dazheng Chen, Shi Tang, Jincheng Zhang, Ying Wang, Genquan Han, Shengrui Xu, Yue Hao (2015). Flexible ITO-Free Organic Solar Cells Based on $\hbox{MoO}_{3}/\hbox{Ag}$ Anodes. IEEE photonics journal.DOI
1630. Xiaofei Wang, Hong Zhang, Jianrong Zhang, Changyi Li, Xin Du, Yue Hao (2015). A multi-cell battery pack monitoring chip based on 0.35-µm BCD technology for electric vehicles. IEICE Electronics Express.DOI
1631. Yonggui Shi, Yue Hao, Dong Wang, Jincheng Zhang, Peng Zhang, Xuefang Shi, Dang Han, Zheng Chai, Jingdong Yan (2015). Effects of the flow rate of hydrogen on the growth of graphene. International Journal of Minerals Metallurgy and Materials.DOI
1632. Sheng Lei Zhao, Bin Hou, Wei Wei Chen, Minhan Mi, Jia Xin Zheng, Jin Cheng Zhang, Hua Xiao, Yue Hao (2015). Analysis of the Breakdown Characterization Method in GaN-Based HEMTs. IEEE Transactions on Power Electronics.DOI
1633. Ling Lv, Xiaohua Ma, Jincheng Zhang, Zhen Bi, Linyue Liu, Hengsheng Shan, Yue Hao (2015). Proton Irradiation Effects on AlGaN/AlN/GaN Heterojunctions. IEEE Transactions on Nuclear Science.DOI
1634. Minhan Mi, Yunlong He, Bin Hou, Meng Zhang, Zuochen Shi, Xiaohua Ma, Peixian Li, Yue Hao (2015). The characteristics of fluorinated gate dielectric AlGaN/GaN MIS-HEMT. IEICE Electronics Express.DOI
1635. Yanrong Cao, Yi Yang, Cheng Cao, Wen-Long He, Xue-Feng Zheng, Xiaohua Ma, Yue Hao (2015). Recovery of PMOSFET NBTI under different conditions. Chinese Physics B.DOI
1636. Yue Hao, Jinfeng Zhang, Jincheng Zhang, Xiaohua Ma, Xuefeng Zheng (2015). Progress in nitride semiconductor electronic devices. Chinese Science Bulletin (Chinese Version).DOI
1637. 戴显英，李金龙，郝跃（2014）. 应变锗的导带结构计算与分析. 《西安电子科技大学学报》.
1638. 罗俊，王健安，郝跃，代天君，晏开华，李金龙，黄姣英（2014）. 基于加速退化试验的模拟IC寿命评估研究. 《微电子学》.
1639. 杨小峰，史江义，马佩军，郝跃（2014）. S波段六位高精度移相器设计. 《西安电子科技大学学报》.
1640. 恩云飞，刘远，何玉娟，师谦，郝跃（2014）. 非晶硅薄膜晶体管关态电流的物理模型. 《西安电子科技大学学报》.
1641. Sheng-Lei Zhao, Min-Han Mi, Bin Hou, Jun Luo, Yi Wang, Dai Yang, Jin-Cheng Zhang, Xiao-Hua Ma, Yue Hao (2014). Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain.DOI
1642. M. Cao, Kai Zhang, Yong-He Chen, Jin-Cheng Zhang, Xiao-Hua Ma, Yue Hao (2014). High-efficiency S-band harmonic tuning GaN amplifier.DOI
1643. Hui-Juan Wen, Jin-Cheng Zhang, Xiao-Li Lu, Zhi-Zhe Wang, Hai-Jing Wei, Shao-Hui Ge, Rong-Tao Cao, Yue Hao (2014). Improved mobility of AlGaN channel heterojunction material using an AlGaN/GaN composite buffer layer.DOI
1644. 廖雪阳，张凯，曾畅，郑雪峰，恩云飞，来萍，郝跃 (2014). Interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique. Chinese Physics B.
1645. Jinfeng Zhang, Yuhu Nie, Yong-Bo Zhou, Kun Tian, Wei Ha, Ming Xiao, Jincheng Zhang, Yue Hao (2014). Depth-dependent mosaic tilt and twist in GaN epilayer: An approximate evaluation. Chinese Physics B.DOI
1646. Min-Han Mi, Kai Zhang, Xing Chen, Sheng-Lei Zhao, Chong Wang, Jin-Cheng Zhang, Xiao-Hua Ma, Yue Hao (2014). Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage.DOI
1647. Wei Mao, Wei-Bo She, Cui Yang, Chao Zhang, Jincheng Zhang, Xiaohua Ma, Jinfeng Zhang, Hongxia Liu, Lin‐An Yang, Kai Zhang, Shenglei Zhao, Yonghe Chen, Xuefeng Zheng, Yue Hao (2014). A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor. Chinese Physics B.DOI
1648. Mengyi Cao, Yang Lu, Jiaxing Wei, Yonghe Chen, Weijun Li, Jiaxin Zheng, Xiaohua Ma, Yue Hao (2014). An improved EEHEMT model for kink effect on AlGaN/GaN HEMT. Chinese Physics B.DOI
1649. Liang Li, Lin‐An Yang, JunShuai Xue, Rongtao Cao, Shengrui Xu, Jincheng Zhang, Yue Hao (2014). Improved crystal quality of GaN film with the in-plane lattice-matched In0.17Al0.83N interlayer grown on sapphire substrate using pulsed metal—organic chemical vapor deposition. Chinese Physics B.DOI
1650. Mei Wu, Daisy Zheng, Yuan Wang, Wei-Wei Chen, Kai Zhang, Xiao-Hua Ma, Jin-Cheng Zhang, Yue Hao (2014). Schottky forward current transport mechanisms in AlGaN/GaN HEMTs over a wide temperature range.DOI
1651. Sheng-Lei Zhao, Yuan Wang, Xiao-Lei Yang, Zhiyu Lin, Chong Wang, Jin-Cheng Zhang, Xiao-Hua Ma, Yue Hao (2014). Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors.DOI
1652. 王冲，陈冲，何云龙，郑雪峰，马晓华，张进成，毛维，郝跃 (2014). Breakdown voltage and current collapse of F-plasma treated AlGaN/GaN HEMTs. Journal of Semiconductors.
1653. Xuefeng Zheng, Shuang Fan, Di Kang, Jian-Kun Zhang, Yan-Rong Cao, Xiao-Hua Ma, Yue Hao (2014). Electron Trap Energy Distribution in HfO2 by the Discharge-Based Pulse I–V Technique.DOI
1654. Xiao-Yi Lei, Hong-Xia Liu, Yue Zhang, Xiao-Hua Ma, Yue Hao (2014). Model of hot-carrier induced degradation in ultra-deep sub-micrometer nMOSFET.DOI
1655. Yue Zhang, Qing-Qing Zhuo, Hongxia Liu, Xiao-Hua Ma, Yue Hao (2014). Flat-roof phenomenon of dynamic equilibrium phase in the negative bias temperature instability effect on a power MOSFET.DOI
1656. Teng Jiang, Cheng-Rui Xu, Yue Hao, Jin-Cheng Zhang, Jin-Feng Zhang, Zhiyu Lin, Nan Lei, 力 陆小 (2014). m-side GaN based polar AlN nanowire material and preparation method thereof.
1657. Peng Zhang, Sheng-Lei Zhao, Jun-Shuai Xue, Kai Zhang, Xiao-Hua Ma, Jin-Cheng Zhang, Yue Hao (2014). Trap States in Al2O3 InAlN/GaN Metal-Oxide-Semiconductor Structures by Frequency-Dependent Conductance Analysis.DOI
1658. Wen-Ping Gu, Lin Zhang, Qing-Hua Li, Yan-Zhang Qiu, Yue Hao, Si Quan, Pan-Zhi Liu (2014). Effect of neutron irradiation on the electrical properties of AlGaN/GaN high electron mobility transistors.DOI
1659. Chong Wang, Kun Zhang, Yunlong He, Xue-Feng Zheng, Xiaohua Ma, Jincheng Zhang, Yue Hao (2014). Effects of Annealing on Schottky Characteristics in AlGaN/GaN HEMT with Transparent Gate Electrode. Chinese Physics Letters.DOI
1660. Yi Zhao, Jincheng Zhang, JunShuai Xue, Shengrui Xu, Xiaowei Zhou, Yue Hao (2014). Improved carrier mobility of InAlN/GaN heterostructure grown on cone-shaped patterned sapphire substrate. Japanese Journal of Applied Physics.DOI
1661. Qing Chen, Lin’an Yang, Shulong Wang, Yue Zhang, Yang Dai, Yue Hao (2014). Influence of the anisotropy on the performance of D-band SiC IMPATT diodes. Applied Physics A.DOI
1662. Xuefeng Zheng, Shuang Fan, Di Kang, Weiwei Sun, Xiaohua Ma, Yue Hao (2014). Study on the conduction mechanism of surface leakage current for AlGaN/GaN HEMTS under reverse gate bias. IEEE International Conference on Solid-State and Integrated Circuit Technology.DOI
1663. Yonghong Huang, Ying Wang, Lin‐An Yang, Hui-Fang Zhai, Zhizhe Wang, Yue Hao (2014). A numerical analysis on the thermal effect in GaN based Gunn diode. IEEE International Conference on Solid-State and Integrated Circuit Technology.DOI
1664. Mingshan Liu, Genquan Han, Yan Liu, Chunfu Zhang, Hongjuan Wang, Xiangdong Li, Jincheng Zhang, Buwen Cheng, Yue Hao (2014). Undoped Ge0.92Sn0.08 quantum well PMOSFETs on (001), (011) and (111) substrates with in situ Si2H6 passivation: High hole mobility and dependence of performance on orientation. Symposium on VLSI Technology.DOI
1665. Zhen Bi, Jincheng Zhang, Ling Lv, Yue Hao (2014). The Effect of 3-MeV Proton Irradiation on the Performance of InGaN/GaN MQWs Solar Cells. IEEE Photonics Technology Letters.DOI
1666. Qing Chen, Lin'an Yang, Yang Dai, Yue Hao (2014). A comparative investigation on <0001> direction and <11–20> direction 4H-SiC impact avalanche transit time devices working at D-band frequencies. International Workshop on Junction Technology.DOI
1667. Yonghe Chen, Kai Zhang, Mengyi Cao, Shenglei Zhao, Jincheng Zhang, Xiaohua Ma, Yue Hao (2014). Study of surface leakage current of AlGaN/GaN high electron mobility transistors. Applied Physics Letters.DOI
1668. Jiejie Zhu, Xiaohua Ma, Bin Hou, Weiwei Chen, Yue Hao (2014). Investigation of gate leakage mechanism in Al2O3/Al0.55Ga0.45N/GaN metal-oxide-semiconductor high-electron-mobility transistors. Applied Physics Letters.DOI
1669. Chong Wang, Yunlong He, Ning Ding, Xue-Feng Zheng, Peng Zhang, Xiaohua Ma, Jincheng Zhang, Yue Hao (2014). Simulation and Experimentation for Low Density Drain AlGaN/GaN HEMT. Chinese Physics Letters.DOI
1670. JunShuai Xue, Jincheng Zhang, Yue Hao (2014). Investigation of TMIn pulse duration effect on the properties of InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition. Journal of Crystal Growth.DOI
1671. Xiaofei Wang, Hong Zhang, Long Zhang, Jianrong Zhang, Yue Hao (2014). A daisy-chain SPI interface in a battery voltage monitoring IC for electric vehicles. IEEE International Conference on Solid-State and Integrated Circuit Technology.DOI
1672. Yan Liu, Jing Sen Yan, Hongjuan Wang, Qingfang Zhang, Mingshan Liu, Bin Zhao, Chunfu Zhang, Buwen Cheng, Yue Hao, Genquan Han (2014). Strained GeSn p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors With In Situ Si2H6 Surface Passivation: Impact of Sn Composition. IEEE Transactions on Electron Devices.DOI
1673. Dazheng Chen, Chunfu Zhang, Zhizhe Wang, Jincheng Zhang, Shi Tang, Wei Wei, Li Sun, Yue Hao (2014). High efficient ITO free inverted organic solar cells based on ultrathin Ca modified AZO cathode and their light soaking issue. Organic Electronics.DOI
1674. Jun Luo, Guolin Qin, Kaizhou Tan, Shenglei Zhao, Hao Chen, Yue Hao (2014). Life estimation of analog IC based on accelerated degradation testing. International Conference on Reliability, Maintainability and Safety.DOI
1675. Dazheng Chen, Chunfu Zhang, Zhizhe Wang, Jincheng Zhang, Shi Tang, Wei Wei, Li Sun, Yue Hao (2014). Efficient indium-tin-oxide free inverted organic solar cells based on aluminum-doped zinc oxide cathode and low-temperature aqueous solution processed zinc oxide electron extraction layer. Applied Physics Letters.DOI
1676. Yan Liu, Jing Sen Yan, Genquan Han, Hongjuan Wang, Mingshan Liu, Chunfu Zhang, Buwen Cheng, Yue Hao (2014). Strained Ge0.96Sn0.04 P-channel MOSFETs with in situ low temperature Si2H6 surface passivation. International Silicon-Germanium Technology and Device Meeting (ISTDM).DOI
1677. Zhizhe Wang, Chunfu Zhang, Rui Gao, Dazheng Chen, Shi Tang, Jincheng Zhang, Dong Wang, Xiaoli Lu, Yue Hao (2014). Improvement of transparent silver thin film anodes for organic solar cells with a decreased percolation threshold of silver. Solar Energy Materials and Solar Cells.DOI
1678. Hongjuan Wang, Genquan Han, Yan Liu, Jing Sen Yan, Chunfu Zhang, Jincheng Zhang, Yue Hao (2014). Germanium PMOSFETs with Low-Temperature Si 2 H 6 Passivation Featuring High Hole Mobility and Superior Negative Bias Temperature Instability. Chinese Physics Letters.DOI
1679. Yonggui Shi, D. Wang, J. C. Zhang, P. Zhang, Xiaoping Shi, Yue Hao (2014). Fabrication of single-crystal few-layer graphene domains on copper by modified low-pressure chemical vapor deposition. CrystEngComm.DOI
1680. Zhizhe Wang, Chunfu Zhang, Dazheng Chen, Shi Tang, Jincheng Zhang, Li Sun, Ting Heng, Yue Hao (2014). ITO-Free Semitransparent Organic Solar Cells Based on Silver Thin Film Electrodes. International Journal of Photoenergy.DOI
1681. Xianying Dai, Ji Yao, Yue Hao (2014). A growth kinetics model of rate decomposition for Si 1− x Ge x alloy based on dimer theory. Chinese Physics B.DOI
1682. Jiejie Zhu, Xiaohua Ma, Yong Jun Xie, Bin Hou, Weiwei Chen, Jincheng Zhang, Yue Hao (2014). Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric. IEEE Transactions on Electron Devices.DOI
1683. Yi Zhao, JunShuai Xue, Jincheng Zhang, Yue Hao (2014). Superior carrier confinement in InAlN/InGaN/AlGaN double heterostructures grown by metal-organic chemical vapor deposition. Applied Physics Letters.DOI
1684. Jingqian Liu, Jinyan Wang, Zhe Yuan Xu, Haisang Jiang, Zhenchuan Yang, Maojun Wang, Min Yu, Bing Xie, Wengang Wu, Xiaohua Ma, Jincheng Zhang, Yue Hao (2014). Investigation of oxidation process in self‐terminating gate recess wet etching technique for AlGaN/GaN normally‐off MOSFETs. Electronics Letters.DOI
1685. Yao Li, Jinfeng Zhang, Jinfeng Zhang, Wei Long Wan, Yachao Zhang, Yuhu Nie, Jincheng Zhang, Jincheng Zhang, Yue Hao (2014). Alloy disorder scattering limited mobility of two-dimensional electron gas in the quaternary AlInGaN/GaN heterojunctions. Physica E Low-dimensional Systems and Nanostructures.DOI
1686. Weiwei Chen, Xiaohua Ma, Bin Hou, Jiejie Zhu, Yong-He Chen, Xue-Feng Zheng, Jincheng Zhang, Yue Hao (2014). Impacts of SiN passivation on the degradation modes of AlGaN/GaN high electron mobility transistors under reverse-bias stress. Applied Physics Letters.DOI
1687. Kai Zhang, Xing Chen, Minhan Mi, Shenglei Zhao, Yonghe Chen, Jincheng Zhang, Xiaohua Ma, Yue Hao (2014). Enhancement‐mode AlGaN/GaN HEMTs with thin and high Al composition barrier layers using O2 plasma implantation. physica status solidi (a).DOI
1688. Zhe Yuan Xu, Wengang Wu, Xiaohua Ma, Jincheng Zhang, Yue Hao, Jinyan Wang, Yong Kui Cai, Jingqian Liu, Chunyan Jin, Zhenchuan Yang, Maojun Wang, Min Yu, Bing Xie (2014). Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With $10^{-13}$ A/mm Leakage Current and $10^{12}$ ON/OFF Current Ratio. IEEE Electron Device Letters.DOI
1689. Ying Wang, Lin'an Yang, Zhizhe Wang, Qing Chen, Yonghong Huang, Yang Dai, Hao Chen, Hongliang Zhao, Yue Hao (2014). Ultra-short channel GaN high electron mobility transistor-like Gunn diode with composite contact. Journal of Applied Physics.DOI
1690. Jinfeng Zhang, Yao Li, Ran Yan, Guipeng Liu, Yuhu Nie, Jincheng Zhang, Yue Hao (2014). Anisotropic elastic scattering of stripe/line-shaped scatters to two-dimensional electron gas: Model and illustrations in a nonpolar AlGaN/GaN hetero-junction. Journal of Applied Physics.DOI
1691. Zhiyu Lin, Jincheng Zhang, Shengrui Xu, Zhibin Chen, Shuangyong Yang, Kun Tian, Xujun Su, Xuefang Shi, Yue Hao (2014). Influence of vicinal sapphire substrate on the properties of N-polar GaN films grown by metal-organic chemical vapor deposition. Applied Physics Letters.DOI
1692. Hao Chen, Lin'an Yang, Yue Hao (2014). Influence of InGaN sub-quantum-well on performance of InAlN/GaN/InAlN resonant tunneling diodes. Journal of Applied Physics.DOI
1693. Yang Lu, Mengyi Cao, Jiaxing Wei, Bochao Zhao, Xiaohua Ma, Yue Hao (2014). 71% PAE C‐band GaN power amplifier using harmonic tuning technology. Electronics Letters.DOI
1694. Shuai Xu, P.X. Li, J.C. Zhang, Teng Jiang, J.J. Ma, Zhiyu Lin, Yue Hao (2014). Threading dislocation annihilation in the GaN layer on cone patterned sapphire substrate. Journal of Alloys and Compounds.DOI
1695. Shenglei Zhao, JunShuai Xue, Peng Zhang, Bin Hou, Jun Luo, Xiaojiao Fan, Jincheng Zhang, Xiaohua Ma, Yue Hao (2014). Enhancement-mode Al2O3/InAlN/AlN/GaN metal–insulator–semiconductor high-electron-mobility transistor with enhanced breakdown voltage using fluoride-based plasma treatment. Applied Physics Express.DOI
1696. Ying Wang, Lin‐An Yang, Yue Hao (2014). Terahertz oscillation in GaN HEMT-like BEAN diode with a composite contact. International Workshop on Junction Technology.DOI
1697. Weiwei Chen, Xiaohua Ma, Bin Hou, Shenglei Zhao, Jiejie Zhu, Jincheng Zhang, Yue Hao (2014). Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress. Microelectronics Reliability.DOI
1698. Xiaohua Ma, Weiwei Chen, Bin Hou, Kai Zhang, Jiejie Zhu, Jincheng Zhang, Xue-Feng Zheng, Yue Hao (2014). Investigation of trap states under Schottky contact in GaN/AlGaN/AlN/GaN high electron mobility transistors. Applied Physics Letters.DOI
1699. Jiejie Zhu, Xiaohua Ma, Bin Hou, Weiwei Chen, Yue Hao (2014). Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis. AIP Advances.DOI
1700. Zhe Yuan Xu, Jinyan Wang, Yong Kui Cai, Jingqian Liu, Zhen Chuan Yang, Xiaoping Li, Maojun Wang, Zhenchuang Yang, Bin Xie, Min Yu, Wengang Wu, Xiaohua Ma, Jincheng Zhang, Yue Hao (2014). 300°C operation of normally‐off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio. Electronics Letters.DOI
1701. Zhe Yuan Xu, Jinyan Wang, Yong Kui Cai, Jingqian Liu, Zhen Chuan Yang, Xiaoping Li, Maojun Wang, Min Yu, Bing Xie, Wengang Wu, Xiaohua Ma, Jincheng Zhang, Yue Hao (2014). High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMT. IEEE Electron Device Letters.DOI
1702. Sen Huang, Qimeng Jiang, Wei Ke, Guoquan Liu, J. Zhang, Xuehui Wang, Yu Zheng, Bing Sun, Chao Zhao, Haiqing Liu, Zhi Hao Jin, X. Liu, H. Wang, Shaohua Liu, Yunyou Lu, C. Liu, Shu Yang, Zhikai Tang, J. Zhang, Yue Hao, Kevin Jing Chen (2014). High-temperature low-damage gate recess technique and ozone-assisted ALD-grown Al2O3 gate dielectric for high-performance normally-off GaN MIS-HEMTs. Technical digest - International Electron Devices Meeting/Technical digest.DOI
1703. Yonggui Shi, Dong Wang, Jincheng Zhang, Peng Zhang, Xuefang Shi, Yue Hao (2014). Synthesis of Multilayer Graphene Films on Copper by Modified Chemical Vapor Deposition. Materials and Manufacturing Processes.DOI
1704. Yanrong Cao, Wenlong He, Cheng Cao, Yi Yang, Xue-Feng Zheng, Xiaohua Ma, Yue Hao (2014). Effect of gate length on the parameter degradation relations of PMOSFET under NBTI stress. Chinese Physics B.DOI
1705. Mengyi Cao, Lu Yang, Jiaxing Wei, Jiaxin Zheng, Xiaohua Ma, Yue Hao (2014). Ka-band full-360° analog phase shifter with low insertion loss. Journal of Semiconductors.DOI
1706. Xiaofei Wang, Hong Zhang, Guoqiang Yang, Changyi Li, Yue Hao (2014). A 12-bit incremental ΣΔ ADC for battery management system in electric vehicles. IEEE International Conference on Solid-State and Integrated Circuit Technology.DOI
1707. Yanrong Cao, Yi Yang, Cheng Cao, Wenlong He, Xuefeng Zheng, Xiaohua Ma, Yue Hao (2014). Recovery of PMOSFET NBTI at different cycles. IEEE International Conference on Solid-State and Integrated Circuit Technology.DOI
1708. Zhen Yang, Jinyan Wang, Xiaoping Li, Bo Zhang, Jian ping Zhao, Zhe Yuan Xu, Maojun Wang, Min Yu, Zhenchuan Yang, Wengang Wu, Yuming Zhang, Jincheng Zhang, Xiaohua Ma, Yue Hao (2014). A novel method for measuring parasitic resistance in high electron mobility transistors. Solid-State Electronics.DOI
1709. Zhiming Li, Jincheng Zhang, Jinping Li, Haiying Jiang, Xiaoqian Fu, Yanbin Han, Yingjie Xia, Yimei Huang, Jianqin Yin, Lejuan Zhang, Yue Hao (2014). Modeling and simulation of a novel susceptor composed of two materials in MOVPE reactor. Journal of Crystal Growth.DOI
1710. Yue Hao, JunShuai Xue, Jincheng Zhang (2014). Pulsed metal organic chemical vapor deposition of InAlN-based heterostructures and its application in electronic devices. Chinese Science Bulletin.DOI
1711. Xiangwei Jiang, Jian Ru Gong, Nuo Xu, Shu‐Shen Li, Jinfeng Zhang, Yue Hao, Lin‐Wang Wang (2014). Enhancement of band-to-band tunneling in mono-layer transition metal dichalcogenides two-dimensional materials by vacancy defects. Applied Physics Letters.DOI
1712. Zhen Bi, Yue Hao, JinCheng Zhang (2013). The proton irradiation hardness of InGaN/GaN MQWs solar cells. Proceedings of 2013 International Conference on Future Energy,Environment,and Materials(FEEM 2013 V88).
1713. Haonan Wei, Jin-Cheng Zhang, Sheng-Lei Zhao, Shao-Hui Ge, Hui-Juan Wen, Chun-Fu Zhang, Xiao-Hua Ma, Yue Hao (2013). AlGaN Channel High Electron Mobility Transistors with Ultra-Low Drain-Induced-Barrier-Lowering Coefficient.DOI
1714. 戴显英，郭静静，邵晨峰，郑若川，郝跃（2013）. CFD模拟RPCVD的正交法优化设计与分析. 《西安电子科技大学学报》.
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1716. Li-Yuan Yang, Shan Ai, Yonghe Chen, Mengyi Cao, Kai Zhang, Xiaohua Ma, Yue Hao (2013). A self-heating study on multi-finger AlGaN/GaN high electron mobility transistors. Journal of Semiconductors.DOI
1717. Dan-Hui Wang, Sheng-Rui Xu, Yue Hao, Jin-Cheng Zhang, Tian-Han Xu, Zhiyu Lin, Hao Zhou, Xiao-Yong Xue (2013). Study on the relationships between Raman shifts and temperature range for a-plane GaN using temperature-dependent Raman scattering.DOI
1718. Kai Zhang, Mengyi Cao, Yonghe Chen, Li-Yuan Yang, Chong Wang, Xiaohua Ma, Yue Hao (2013). Fabrication and characterization of V-gate AlGaN/GaN high-electron-mobility transistors. Chinese Physics B.DOI
1719. Chong Wang, Yunlong He, Xue-Feng Zheng, Xiaohua Ma, Jincheng Zhang, Yue Hao (2013). AlGaN/GaN high-electron-mobility transistors with transparent gates by Al-doped ZnO. Chinese Physics B.DOI
1720. Liang Li, Lin-An Yang, Xiao-Wei Zhou, Jin-Cheng Zhang, Yue Hao (2013). Point defect determination by photoluminescence and capacitance—voltage characterization in a GaN terahertz Gunn diode.DOI
1721. Wei-Wei Chen, Xiao-Hua Ma, Bin Hou, Jiejie Zhu, Jin-Cheng Zhang, Yue Hao (2013). The degradation mechanism of an AlGaN/GaN high electron mobility transistor under step-stress.DOI
1722. 全思，马晓华，郑雪峰，郝跃 (2013). An Ultrathin AlGaN Barrier Layer MIS-HEMT Structure for Enhancement-Mode Operation. Chinese Physics Letters.
1723. Kai Zhang, Mengyi Cao, Xiao-Yi Lei, Shenglei Zhao, Li-Yuan Yang, Xue-Feng Zheng, Xiaohua Ma, Yue Hao (2013). Field plate structural optimization for enhancing the power gain of GaN-based HEMTs. Chinese Physics B.DOI
1724. Sheng-Lei Zhao, Wei-Wei Chen, Tong Yue, Yi Wang, Jun Luo, Wei Mao, Xiao-Hua Ma, Yue Hao (2013). Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor.DOI
1725. 吕玲，林志宇，张进成，马晓华，郝跃（2013）. GaN基高电子迁移率晶体管的质子辐照效应研究. 《空间电子技术》.
1726. Yue Zhang, Shi Pu, Xiao-Yi Lei, Qing Chen, Xiao-Hua Ma, Yue Hao (2013). Effects of stress conditions on the generation of negative bias temperature instability-associated interface traps.DOI
1727. Xiao-Yi Lei, Hong-Xia Liu, Kai Zhang, Yue Zhang, Xuefeng Zheng, Xiao-Hua Ma, Yue Hao (2013). Hot carrier degradation and a new lifetime prediction model in ultra-deep sub-micron pMOSFET.DOI
1728. Q. Feng, Qiang Wang, Tao Xing, Qian Li, Yue Hao (2013). Electrical characteristics of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor using La2O3 gate dielectric. Science China Technological Sciences.DOI
1729. Xiao-Hua Ma, Guo-Ping Tang, Yue Hao, Wei-Wei Chen, Sheng-Lei Zhao (2013). A GaN-based HEMT-dimensional electron gas preparation device, and ion implantation method.
1730. Shenglei Zhao, Kai Zhang, Wei Ha, YongHe Chen, Peng Zhang, Jincheng Zhang, Xiaohua Ma, Yue Hao (2013). Trap states in AlGaN channel high-electron-mobility transistors. Applied Physics Letters.DOI
1731. Kai Zhang, Minhan Mi, Yonghe Chen, Mengyi Cao, Chong Wang, Xiaohua Ma, Jincheng Zhang, Yue Hao (2013). Normally-Off AlGaN/GaN High Electron Mobility Transistors with Thin and High Al Composition Barrier Layers. Japanese Journal of Applied Physics.DOI
1732. Zhiyu Lin, Jincheng Zhang, Rongtao Cao, Wei Ha, Shuai Zhang, Xing Chen, Jingdong Yan, Shengrui Xu, Yi Zhao, Liang Li, Yue Hao (2013). Effect of growth temperature on the impurity incorporation and material properties of N-polar GaN films grown by metal-organic chemical vapor deposition. Journal of Crystal Growth.DOI
1733. Liang Li, Lin'an Yang, Jincheng Zhang, Yue Hao (2013). Dislocation blocking by AlGaN hot electron injecting layer in the epitaxial growth of GaN terahertz Gunn diode. Journal of Applied Physics.DOI
1734. Qian Feng, Yu Kun Li, Kai Du, Peng Shi, Qiang Wang, Qingling Feng, Yue Hao (2013). Polymer-GaN Bulk Heterojunction Photovoltaic Cells. Advanced materials research.DOI
1735. Xiaohua Ma, Jiejie Zhu, Xueyang Liao, Tong Yue, Weiwei Chen, Yue Hao (2013). Quantitative characterization of interface traps in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by dynamic capacitance dispersion technique. Applied Physics Letters.DOI
1736. JunShuai Xue, Jincheng Zhang, Yue Hao (2013). Effects of Growth Temperature on Structural and Electrical Properties of InAlN/GaN Heterostructures Grown by Pulsed Metal Organic Chemical Vapor Deposition on c-Plane Sapphire. Japanese Journal of Applied Physics.DOI
1737. Kai Zhang, JunShuai Xue, Mengyi Cao, Li-Yuan Yang, Yonghe Chen, Jincheng Zhang, Xiaohua Ma, Yue Hao (2013). Trap states in InAlN/AlN/GaN-based double-channel high electron mobility transistors. Journal of Applied Physics.DOI
1738. Hao Chen, Lin’an Yang, Xiaoxian Liu, Zhangming Zhu, Jun Luo, Yue Hao (2013). The impact of trapping centers on AlGaN/GaN resonant tunneling diode. IEICE Electronics Express.DOI
1739. Wei Wei, Chunfu Zhang, Dazheng Chen, Zhizhe Wang, Chunxiang Zhu, Jincheng Zhang, Xiaoli Lu, Yue Hao (2013). Efficient “Light-soaking”-free Inverted Organic Solar Cells with Aqueous Solution Processed Low-Temperature ZnO Electron Extraction Layers. ACS Applied Materials & Interfaces.DOI
1740. Yonggui Shi, Xinghua Yang, Dong Wang, Peng Zhang, Jincheng Zhang, Yue Hao, Jianfeng Yang (2013). Enlargement of Silicon Carbide Lely Platelet by Physical Vapor Transport Technique. Materials and Manufacturing Processes.DOI
1741. Xianying Dai, Chenfeng Shao, Yue Hao (2013). Uniaxially Strained Silicon on Insulator with Wafer Level Prepared by Mechanical Bending and Annealing. Applied Physics Express.DOI
1742. Qian Feng, Qian Feng, Peng Shi, Jie Zhao, Kai Du, Yu Kun Li, Qing Feng, Qing Feng, Yue Hao (2013). Transport Properties of Two-Dimensional Electron Gas in Cubic AlGaN/GaN Heterostructures. Advanced materials research.DOI
1743. Liang Li, Lin'an Yang, Rongtao Cao, Sheng Rui Xu, Xiaowei Zhou, JunShuai Xue, Zhiyu Lin, Wei Ha, Jincheng Zhang, Yue Hao (2013). Reduction of threading dislocations in N-polar GaN using a pseudomorphicaly grown graded-Al-fraction AlGaN interlayer. Journal of Crystal Growth.DOI
1744. Shengrui Xu, Yue Hao, Jincheng Zhang, Teng Jiang, Linan Yang, Xiaoli Lu, Zhiyu Lin (2013). Yellow Luminescence of Polar and Nonpolar GaN Nanowires on r-Plane Sapphire by Metal Organic Chemical Vapor Deposition. Nano Letters.DOI
1745. Hao Chen, Lin'an Yang, Shuang Long, Yue Hao (2013). Reproducibility in the negative differential resistance characteristic of In0.17Al0.83N/GaN resonant tunneling diodes—Theoretical investigation. Journal of Applied Physics.DOI
1746. Ying Wang, Lin‐An Yang, Wei Mao, Shuang Long, Yue Hao (2013). Modulation of Multidomain in AlGaN/GaN HEMT-Like Planar Gunn Diode. IEEE Transactions on Electron Devices.DOI
1747. Hao Chen, Lin'an Yang, Xiaoxian Liu, Zhangming Zhu, Jun Luo, Yue Hao (2013). Erratum: The impact of trapping centers on AlGaN/GaN resonant tunneling diode [IEICE Electronics Express Vol. 10 (2013) No. 19 pp. 20130588]. IEICE Electronics Express.DOI
1748. Jibin Fan, Hongxia Liu, Fei Ma, Yue Hao (2013). Improvement of the Anneal-Induced Valence Band Offset Variation by the Hybrid Deposition of ${\rm HfO}_{2}$ on Si. IEEE Transactions on Electron Devices.DOI
1749. Peng Zhang, Yuan Wang, Xing Zhang, Xiaohua Ma, Yue Hao (2013). Novel silicon-controlled rectifier (SCR) for digital and high-voltage ESD power supply clamp. Science China Information Sciences.DOI
1750. Jibin Fan, Hongxia Liu, Cheng-Xi Fei, Fei Ma, Xiaojiao Fan, Yue Hao (2013). Evidence of GeO volatilization and its effect on the characteristics of HfO2grown on a Ge substrate. Chinese Physics B.DOI
1751. Jibin Fan, Hongxia Liu, Fei Ma, Qingqing Zhuo, Yue Hao (2013). Influences of different oxidants on the characteristics of HfAlOxfilms deposited by atomic layer deposition. Chinese Physics B.DOI
1752. Zhiming Li, Jinping Li, Haiying Jiang, Yanbin Han, Jianqin Yin, Yingjie Xia, Yongming Chang, Jincheng Zhang, Yue Hao (2013). Effect of thermocouple position on temperature field in nitride MOCVD reactor. Journal of Crystal Growth.DOI
1753. Hao-Ran Chen, Lin’an Yang, shuang long, yang dai, qing chen, liang li, Yue Hao (2012). Two-dimensional electron gases analysis on terahertz InAlN/GaN resonant tunneling diode. Proceedings of 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012).
1754. 林志宇，张进成，杜大超，许晟瑞，周昊，赵胜雷，戴扬，罗俊，郝跃（2012）. 斜切蓝宝石衬底上N面GaN材料的MOCVD生长研究. 《第十二届全国MOCVD学术会议》.
1755. 罗俊，郝跃，秦国林，谭开洲，王健安，胡刚毅，许斌，刘凡，黄晓宗，唐昭焕，刘勇（2012）. 微纳米CMOS VLSI电路可靠性仿真与设计. 《微电子学》.
1756. 许晟瑞，刘子扬，姜腾，林志宇，周昊，张进成，郝跃（2012）. 非极性a面GaN堆垛层错抑制研究. 《第十二届全国MOCVD学术会议》.
1757. Zhiyu Lin, Jin-Cheng Zhang, Hao Zhou, Xiao-Gang Li, Fan-Na Meng, Lin-Xia Zhang, Shan Ai, Sheng-Rui Xu, Yi Zhao, Yue Hao (2012). Influence of double AlN buffer layers on the qualities of GaN films prepared by metal—organic chemical vapour deposition.DOI
1758. 张伟，薛军帅，周晓伟，张月，刘子阳，张进成，郝跃 (2012). Effect of Si doping in wells of AlGaN/GaN superlattice on the characteristics of epitaxial layer. Chinese Physics B.
1759. Li-Yuan Yang, Xiao-Yong Xue, Kai Zhang, Xue-Feng Zheng, Xiaohua Ma, Yue Hao (2012). Channel temperature determination of a multifinger AlGaN/GaN high electron mobility transistor using a micro-Raman technique. Chinese Physics B.DOI
1760. Q. Feng, Qian Li, Tao Xing, Qiang Wang, Jin-Cheng Zhang, Yue Hao (2012). Performance of La2O3/InAlN/GaN metal—oxide—semiconductor high electron mobility transistors.DOI
1761. Xiao-Wei Zhou, Sheng-Rui Xu, Jin-Cheng Zhang, Ji-Yuan Dang, Ling Lu, Yue Hao, Lixin Guo (2012). Luminescence of a GaN grain with a nonpolar and semipolar plane in relation to microstructural characterization.DOI
1762. Ling Lu, Jin-Cheng Zhang, Jun-Shuai Xue, Xiao-Hua Ma, Wei Zhang, Zhi-Wei Bi, Yue Zhang, Yue Hao (2012). Neutron irradiation effects on AlGaN/GaN high electron mobility transistors.DOI
1763. Shengrui Xu, Jinfeng Zhang, Wen-Ping Gu, Yue Hao, Jincheng Zhang, Xiaowei Zhou, Zhiyu Lin, Wei Mao (2012). Structural and optical investigation of nonpolar a -plane GaN grown by metal—organic chemical vapour deposition on r -plane sapphire by neutron irradiation. Chinese Physics B.DOI
1764. Xiao-Yong Xue, Sheng-Rui Xu, Jin-Cheng Zhang, Zhiyu Lin, Jun-Cai Ma, Zi-Yang Liu, Jun-Shuai Xue, Yue Hao (2012). Temperature dependences of Raman scattering in different types of GaN epilayers.DOI
1765. Q. Feng, Tao Xing, Qiang Wang, Q. Feng, Qian Li, Zhi-Wei Bi, Jin-Cheng Zhang, Yue Hao (2012). A study of GaN MOSFETs with atomic-layer-deposited Al2O3 as the gate dielectric.DOI
1766. 戴显英，王琳，杨程，郑若川，张鹤鸣，郝跃（2012）. 机械致单轴应变SOI晶圆的制备. 《西安电子科技大学学报》.
1767. 戴显英，李志，张鹤鸣，郝跃，王琳，查冬，王晓晨，付毅初（2012）. 表面Ge沟道pMOSFET阈值电压模型. 《西安电子科技大学学报》.
1768. 戴显英，郑若川，郭静静，张鹤鸣，郝跃，邵晨峰，吉瑶，杨程（2012）. 弛豫锗硅减压化学气相淀积的CFD模型及仿真. 《西安电子科技大学学报》.
1769. Jun-Cai Ma, Jin-Cheng Zhang, Jun-Shuai Xue, Zhiyu Lin, Zi-Yang Liu, Xiao-Yong Xue, Xiao-Hua Ma, Yue Hao (2012). Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage.DOI
1770. 王冲，何云龙，郑雪峰，郝跃，马晓华，张进城 (2012). AlGaN/GaN HEMTs with 0.2μm V-gate recesses for X-band application. Journal of Semiconductors.
1771. 黄俊，张宗贤，黄峰，魏珂，刘新宇，郝跃，张进诚（2012）. 采用AlN绝缘栅的AlGaN/GaN凹栅槽结构MISHEMT器件. 《科技创新导报》.
1772. Yue Hao, Jinfeng Zhang, B. Shen, Xin-Yu Liu (2012). Progress in Group III nitride semiconductor electronic devices.DOI
1773. Ling Lu, Yue Hao, Xuefeng Zheng, Jin-Cheng Zhang, Sheng-Rui Xu, Zhiyu Lin, Shan Ai, Fan-Na Meng (2012). Proton irradiation effects on HVPE GaN. Science China Technological Sciences.DOI
1774. Dan-Hui Wang, Sheng-Rui Xu, Jin-Cheng Zhang, Kewei Chen, Zhi-Wei Bi, Lin-Xia Zhang, Fan-Na Meng, Shan Ai, Yue Hao (2012). Growth of InGaN films on c-plane sapphire substrates with an AlN nucleation layer by using metal-organic chemical-vapor deposition. Journal of the Korean Physical Society.DOI
1775. Sheng-Rui Xu, Zhiyu Lin, Xiao-Yong Xue, Zi-Yang Liu, Jun-Cai Ma, Teng Jiang, Wei Mao, Dan-Hui Wang, Jin-Cheng Zhang, Yue Hao (2012). Comparative Study of the Characteristics of the Basal Plane Stacking Faults of Nonpolar a-Plane and Semipolar (112̄2) GaN.DOI
1776. Dan-Hui Wang, Hao Zhou, Jin-Cheng Zhang, Sheng-Rui Xu, Lin-Xia Zhang, Fan-Na Meng, Shan Ai, Yue Hao (2012). Study on growing thick AlGaN layer on c-plane sapphire substrate and free-standing GaN substrate. Science China Physics Mechanics and Astronomy.DOI
1777. FanNa Meng, Jincheng Zhang, Hao Zhou, Jun-Cai Ma, JunShuai Xue, Li-Sha Dang, Linxia Zhang, Ming Lu, Shan Ai, Xiaogang Li, Yue Hao (2012). Transport characteristics of AlGaN/GaN/AlGaN double heterostructures with high electron mobility. Journal of Applied Physics.DOI
1778. JunShuai Xue, Jincheng Zhang, Kai Zhang, Yi Zhao, Linxia Zhang, Xiaohua Ma, Xiaogang Li, FanNa Meng, Yue Hao (2012). Fabrication and characterization of InAlN/GaN-based double-channel high electron mobility transistors for electronic applications. Journal of Applied Physics.DOI
1779. Lin’an Yang, Shuang Long, Xin Guo, Yue Hao (2012). A comparative investigation on sub-micrometer InN and GaN Gunn diodes working at terahertz frequency. Journal of Applied Physics.DOI
1780. JunShuai Xue, Jincheng Zhang, Yaowei Hou, Hao Zhou, Jinfeng Zhang, Yue Hao (2012). Pulsed metal organic chemical vapor deposition of nearly latticed-matched InAlN/GaN/InAlN/GaN double-channel high electron mobility transistors. Applied Physics Letters.DOI
1781. Wei Zhang, Yue Zhang, Wei Mao, Xiaohua Ma, Jincheng Zhang, Yue Hao (2012). Influence of the Interface Acceptor-Like Traps on the Transient Response of AlGaN/GaN HEMTs. IEEE Electron Device Letters.DOI
1782. Liang Li, Lin‐An Yang, Jincheng Zhang, JunShuai Xue, Shengrui Xu, Ling Lv, Yue Hao, Mutong Niu (2012). Threading dislocation reduction in transit region of GaN terahertz Gunn diodes. Applied Physics Letters.DOI
1783. Chunfu Zhang, Yue Hao, Qian Feng (2012). Effective surface passivation of AlGaN/GaN heterostructures by using PH3 plasma treatment and HfO2 dielectric. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics.DOI
1784. Z.Y. Liu, Shengrui Xu, J.C. Zhang, JunShuai Xue, Xue Xu, Mingyu Niu, Yue Hao (2012). Effect of defects on strain state in nonpolar a-plane GaN. Journal of Crystal Growth.DOI
1785. JunShuai Xue, Jincheng Zhang, Wei Zhang, Liang Li, FanNa Meng, Ming Lu, Jing Ning, Yue Hao (2012). Effects of AlN interlayer on the transport properties of nearly lattice-matched InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition. Journal of Crystal Growth.DOI
1786. Liang Li, Wei Mao, Lin‐An Yang, Jincheng Zhang, Qianwei Kuang, Yue Hao (2012). An efficient model for trap analysis in C-V measurement for AlGaN/GaN heterostructure. International Workshop on Junction Technology.DOI
1787. Zhizhe Wang, Chunfu Zhang, Dazheng Chen, Jincheng Zhang, Qian Feng, Shengrui Xu, Xiaowei Zhou, Yue Hao (2012). Investigation of Controlled Current Matching in Polymer Tandem Solar Cells Considering Different Layer Sequences and Optical Spacer. Japanese Journal of Applied Physics.DOI
1788. Xiaoli Lu, Sining Dong, Xiaoguang Li, Marin Alexe, Dietrich Hesse, Yue Hao (2012). Field dependency of magnetoelectric coupling in multilayered nanocomposite arrays: Possible contribution from surface spins. Applied Physics Letters.DOI
1789. Dazheng Chen, Chunfu Zhang, Zhizhe Wang, Jincheng Zhang, Qian Feng, Shengrui Xu, Xiaowei Zhou, Yue Hao (2012). Performance Comparison of Conventional and Inverted Organic Bulk Heterojunction Solar Cells From Optical and Electrical Aspects. IEEE Transactions on Electron Devices.DOI
1790. Dazheng Chen, Chunfu Zhang, Zhizhe Wang, Rui Gao, Yue Hao (2012). Differences of conventional and inverted organic solar cells in optical aspect. IEEE International Conference on Solid-State and Integrated Circuit Technology.DOI
1791. Zhizhe Wang, Chunfu Zhang, Dazheng Chen, Wei Wei, Yue Hao (2012). Performance optimization by considering current matching in polymer tandem solar cells. IEEE International Conference on Solid-State and Integrated Circuit Technology.DOI
1792. Szu-Ling Liu, Xincheng Tian, Yue Hao, Albert Chin (2012). A Bias-Varied Low-Power K-band VCO in 90 nm CMOS Technology. IEEE Microwave and Wireless Components Letters.DOI
1793. Ming Du, Pei Jun Ma, Yue Hao (2012). The Impact of Anneal on Electromigration of Copper Interconnect and the Optimized Anneal Technology Study. Advanced materials research.DOI
1794. Jibin Fan, Hongxia Liu, Bo Gao, Fei Ma, Qingqing Zhuo, Yue Hao (2012). Influence of different oxidants on the band alignment of HfO2films deposited by atomic layer deposition. Chinese Physics B.DOI
1795. Zhaohuan Tang, Kaizhou Tan, Wei Cui, Jing Zhang, Yi Ping Zhong, Shiliu Xu, Yue Hao, Heming Zhang, Huiyong Hu, Zhengfan Zhang, Gangyi Hu (2012). A 150% enhancement of PMOSFET mobility using hybrid orientation. Journal of Semiconductors.DOI
1796. Jibin Fan, Hongxia Liu, Qianwei Kuang, Bo Gao, Fei Ma, Yue Hao (2012). Physical properties and electrical characteristics of H2O-based and O3-based HfO2 films deposited by ALD. Microelectronics Reliability.DOI
1797. JunShuai Xue, JinCheng ZHANG, Yue Hao（2012）. Ⅲ族氮化物InAlN半导体异质结研究进展. Scientia Sinica Informationis.DOI
1798. 张金风，许晟瑞，张进成，郝跃 (2011). Optical and structural investigation of a-plane GaN layers on r-plane sapphire with nucleation layer optimization. Chinese Physics B.
1799. 毛维，杨翠，郝跃，马晓华，王冲，张进成，刘红侠，毕志伟，许晟瑞，杨林安，杨凌，张凯，张乃千，裴轶 (2011). The effect of a HfO2insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT. Chinese Physics B.
1800. Sheng-Rui Xu, Yue Hao, Jin-Cheng Zhang, Xiao-Yong Xue, Peixian Li, Jian-Ting Li, Zhiyu Lin, Zi-Yang Liu, Jun-Cai Ma, Qiang He, Ling Lu (2011). Stress and morphology of a nonpolar a-plane GaN layer on r-plane sapphire substrate.DOI
1801. Xiao-Hua Ma, Ping Ma, 焦颖, Li-Yuan Yang, Jing Ma, Qiang He, 焦莎莎, 张进城, Yue Hao (2011). Magnetotransport properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures. Chinese Physics B.DOI
1802. Zi-Yang Liu, Jin-Cheng Zhang, Huan-Tao Duan, Jun-Shuai Xue, Zhiyu Lin, Jun-Cai Ma, Xiao-Yong Xue, Yue Hao (2011). Effects of the strain relaxation of an AlGaN barrier layer induced by various cap layers on the transport properties in AlGaN/GaN heterostructures.DOI
1803. 何寒冰，杨林安，郝跃，武小虎，梅楠（2011）. GaN共振隧穿二极管及THz振荡器仿真. 《新型工业化》.
1804. Da-Chao Du, Jin-Cheng Zhang, Xin-Xiu Ou, Hao Wang, Kewei Chen, Jun-Shuai Xue, Sheng-Rui Xu, Yue Hao (2011). Investigation of yellow luminescence intensity of N-polar unintentionally doped GaN.DOI
1805. 马晓华，于惠游，全思，杨丽媛，潘才渊，杨凌，王昊，张进成，郝跃 (2011). Enhancement-mode AlGaN/GaN high electronic mobility transistors with thin barrier. Chinese Physics B.
1806. 许晟瑞，周小伟，郝跃，杨林安，张进成，毛维，杨翠，蔡茂世，欧新秀，史林玉，曹艳荣（2011）. 在r面蓝宝石上生长的a面掺硅GaN的光学和电学性质研究. 《中国科学:技术科学》.
1807. Xiao-Hua Ma, Ying Jiao, Ping Ma, Qiang He, Ji-Gang Ma, Kai Zhang, Hui-Long Zhang, Jin-Cheng Zhang, Yue Hao (2011). The reliability of AlGaN/GaN high electron mobility transistors under step-electrical stresses.DOI
1808. 马晓华，潘才渊，杨丽媛，于惠游，杨凌，全思，王昊，张进成，郝跃 (2011). Characterization of Al2O3/GaN/AlGaN/GaN metalinsulator-semiconductor high electron mobility transistors with different gate recess depths. Chinese Physics B.
1809. 毛维，杨翠，郝跃，张进成，刘红侠，毕志伟，许晟瑞，薛军帅，马晓华，王冲，杨林安，张金风，匡贤伟 (2011). Development and characteristic analysis of a field-plated Al2O3/AlInN/GaN MOS-HEMT. Chinese Physics B.
1810. Si Quan, Yue Hao, Xiao-Hua Ma, Hui-Jie Yu (2011). Investigation of AlGaN/GaN fluorine plasma treatment enhancement-mode high electronic mobility transistors by frequency-dependent capacitance and conductance analysis.DOI
1811. Li-Yuan Yang, Yue Hao, Xiao-Hua Ma, Jin-Cheng Zhang, Cai-Yuan Pan, Ji-Gang Ma, Kai Zhang, Ping Ma (2011). High temperature characteristics of AlGaN/GaN high electron mobility transistors.DOI
1812. Yuan-Bin Xie, Si Quan, Xiao-Hua Ma, Jin-Cheng Zhang, Qing-Min Li, Yue Hao (2011). Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT D flip-flop using fluorine plasma treatment.DOI
1813. Zhi-Wei Bi, Zhen-Hua Hu, Wei Mao, Yue Hao, Q. Feng, Yan-Rong Cao, Zhi-Yuan Gao, Jin-Cheng Zhang, Xiao-Hua Ma, Yong-Ming Chang, Zhi-Ming Li, Nan Mei (2011). Investigation of passivation effects in AlGaN/GaN metal—insulator—semiconductor high electron-mobility transistor by gate—drain conductance dispersion study.DOI
1814. Xiao-Hua Ma, Jing Ma, Li-Yuan Yang, Qiang He, 焦颖, Ping Ma, Yue Hao (2011). Kink effect in AlGaN/GaN high electron mobility transistors by electrical stress. Chinese Physics B.DOI
1815. Yan-Rong Cao, Xiao-Hua Ma, Yue Hao, Min Zhu, Wen-Chao Tian, Yue Zhang (2011). Negative Bias Temperature Instability “Recovery" under Negative Stress Voltage with Different Oxide Thicknesses.DOI
1816. Shi-Liu Xu, Jin-Cheng Zhang, Lin-An Yang, Xiao-Wei Zhou, Yanrong Cao, Jinfeng Zhang, Jun-Shuai Xue, Zi-Yang Liu, Jianfeng Ma, F. Bao, Yue Hao (2011). Defect reduction in (1 1 2̄ 0) nonpolar a-plane GaN grown on r-plane sapphire using TiN interlayers.DOI
1817. Liang Li, Lin‐An Yang, Jincheng Zhang, Linxia Zhang, Li-Sha Dang, Qianwei Kuang, Yue Hao (2011). Point defect determination by eliminating frequency dispersion in C–V measurement for AlGaN/GaN heterostructure. Solid-State Electronics.DOI
1818. Shengrui Xu, J.C. Zhang, Yanrong Cao, X.W. Zhou, JunShuai Xue, Zhiyu Lin, J.C. Ma, F. Bao, Yue Hao (2011). Improvements in (1122) semipolar GaN crystal quality by graded superlattices. Thin Solid Films.DOI
1819. Ling Lv, Jinbang Ma, Yanrong Cao, J.C. Zhang, W. Zhang, Long Li, Shengrui Xu, Xiaohua Ma, Xiangjuan Ren, Yue Hao (2011). Study of proton irradiation effects on AlGaN/GaN high electron mobility transistors. Microelectronics Reliability.DOI
1820. JunShuai Xue, Yue Hao, Jincheng Zhang, Xiaowei Zhou, Ziyang Liu, Jun-Cai Ma, Zhiyu Lin (2011). Nearly lattice-matched InAlN/GaN high electron mobility transistors grown on SiC substrate by pulsed metal organic chemical vapor deposition. Applied Physics Letters.DOI
1821. Lin‐An Yang, Yue Hao, Qingyang Yao, Jincheng Zhang (2011). Improved Negative Differential Mobility Model of GaN and AlGaN for a Terahertz Gunn Diode. IEEE Transactions on Electron Devices.DOI
1822. Zhiwei Bi, Qian Feng, Jincheng Zhang, Ling Lü, Wei Mao, Wenping Gu, Xiaohua Ma, Yue Hao (2011). The effects of proton irradiation on the electrical properties of NbAlO/AlGaN/GaN MIS-HEMT. Science China Physics Mechanics and Astronomy.DOI
1823. Sheng Rui Xu, Yue Hao, Lin An Yang, Jin Cheng Zhang, JunShuai Xue, Xiao-Yong Xue, Zi Yang Liu, Zhi Yu Lin, Jun Cai, Pei Xian Li, Jian Ting Li, Qiang He (2011). Improvement of (1122) Semipolar GaN Crystal Quality with TiN Interlayer by Metal Organic Vapor Phase Epitaxy. Japanese Journal of Applied Physics.DOI
1824. Zhiwei Bi, Yue Hao, Qian Feng, TingTing Jiang, Yanrong Cao, Jincheng Zhang, Wei Mao, Ling Lü, Yue Zhang (2011). The passivation mechanism of nitrogen ions on the gate leakage current of HfO2/AlGaN/GaN MOS-HEMTs. Science China Physics Mechanics and Astronomy.DOI
1825. Wei Zhang, Yue Zhang, JunShuai Xue, Ying Zhang, Ling Lv, Jincheng Zhang, Yue Hao (2011). Interaction between Si doping and the polarization-induced internal electric field in the AlGaN/GaN superlattice. Applied Physics Letters.DOI
1826. Lin’an Yang, Hanbing He, Wei Mao, Yue Hao (2011). Quantitative analysis of the trapping effect on terahertz AlGaN/GaN resonant tunneling diode. Applied Physics Letters.DOI
1827. Yue Hao, Ling Yang, Xiaohua Ma, Jigang Ma, Menyi Cao, Cai-Yuan Pan, Chong Wang, Jincheng Zhang (2011). High-Performance Microwave Gate-Recessed AlGaN/AlN/GaN MOS-HEMT With 73% Power-Added Efficiency. IEEE Electron Device Letters.DOI
1828. Lin’an Yang, Wei Mao, Qingyang Yao, Qi Liu, Xuhu Zhang, Jincheng Zhang, Yue Hao (2011). Temperature effect on the submicron AlGaN/GaN Gunn diodes for terahertz frequency. Journal of Applied Physics.DOI
1829. Chunfu Zhang, Jincheng Zhang, Yue Hao, Zhenhua Lin, Chunxiang Zhu (2011). A simple and efficient solar cell parameter extraction method from a single current-voltage curve. Journal of Applied Physics.DOI
1830. Kang Li, Lei Li, Qing Guang, Jiangyi Shi, Yue Hao (2011). Improving the performance of an SOC design for network processing based on FPGA with PlanAhead. International Conference on Electronics, Communications and Control.DOI
1831. Kang Li, Yong Fan, Qing-He Zhao, Yue Hao (2011). A parallel, high-performance bus interconnection scheme. International Conference on Electronics, Communications and Control.DOI
1832. Kang Li, Lei Li, Yong Fan, Jiangyi Shi, Yue Hao (2011). A design of the PLB to AHB bus bridge. International Conference on Electronics, Communications and Control.DOI
1833. Chunfu Zhang, Hailong You, Zhenhua Lin, Yue Hao (2011). Inverted Organic Photovoltaic Cells with Solution-Processed Zinc Oxide as Electron Collecting Layer. Japanese Journal of Applied Physics.DOI
1834. Leilei Li, Zongguang Yu, Yue Hao (2011). Estimates of EEPROM device lifetime. Tsinghua Science & Technology.DOI
1835. Chunfu Zhang, Yue Hao, Shiwun Tong, Zhenhua Lin, Qian Feng, E. T. Kang, Chunxiang Zhu (2011). Effects of Cathode Confinement on the Performance of Polymer/Fullerene Photovoltaic Cells in the Thermal Treatment. IEEE Transactions on Electron Devices.DOI
1836. M. Li, Y. F. Li, Yujuan Wu, S. Cai, N. Y. Zhu, Nadia Rezzak, Ronald D. Schrimpf, Daniel M. Fleetwood, J. Q. Wang, Xiaoxu Cheng, Yuang Wang, D. L. Wang, Yue Hao (2011). Including Radiation Effects and Dependencies on Process-Related Variability in Advanced Foundry SPICE Models Using a New Physical Model and Parameter Extraction Approach. IEEE Transactions on Nuclear Science.DOI
1837. Xincheng Tian, Szu-Ling Liu, Kuan-Han Chen, Yue Hao (2011). Investigation and optimization of low-power techniques in X-band CMOS LC-VCO design. IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC).DOI
1838. Quan Si, Yue Hao, Xiao‐Hua Ma, Yu Hui-You (2011). Influence of60Co gamma radiation on fluorine plasma treated enhancement-mode high-electron-mobility transistor. Chinese Physics B.DOI
1839. Chi Chen, Yue Hao, Ling Yang, Quan Si, Xiaohua Ma, Jincheng Zhang (2010). Nonlinear characterization of GaN HEMT. Journal of Semiconductors.DOI
1840. 马腾，郝跃，陈炽，马晓华 (2010). A new small-signal model for asymmetrical AlGaN/GaN HEMTs. Journal of Semiconductors.
1841. Si Quan, Yue Hao, Xiao-Hua Ma, Peng-Tian Zheng, Yuan-Bin Xie (2010). AlGaN/GaN double-channel HEMT.DOI
1842. Sheng-Rui Xu, Yue Hao, Jin-Cheng Zhang, Xiao-Wei Zhou, Yanrong Cao, Xin-Xiu Ou, Wei Mao, Da-Chao Du, Hao Wang (2010). The etching of a-plane GaN epilayers grown by metal-organic chemical vapour deposition.DOI
1843. 赵广才，李培咸，郝跃（2010）. 腐蚀时间对蓝宝石衬底上外延生长GaN质量的影响. 《发光学报》.
1844. Zhi-Wei Bi, Q. Feng, Yue Hao, Danghui Wang, Xiao-Hua Ma, Jin-Cheng Zhang, Si Quan, Sheng-Rui Xu (2010). AlGaN/GaN MIS-HEMT using NbAlO dielectric layer grown by atomic layer deposition.DOI
1845. Jun-Shuai Xue, Yue Hao, Jin-Cheng Zhang, Jin-Yu Ni (2010). Comparative study of different properties of GaN films grown on (0001) sapphire using high and low temperature AlN interlayers.DOI
1846. 杨凌，胡贵州，郝跃，马晓华，全思，杨丽媛，姜守高 (2010). Electric-stress reliability and current collapse of different thickness SiNxpassivated AlGaN/GaN high electron mobility transistors. Chinese Physics B.
1847. 刘红侠，尹湘坤，刘冰洁，郝跃（2010）. 应变绝缘层上硅锗p型金属氧化物场效应晶体管的阈值电压解析模型. 《物理学报》.
1848. 张进成，李志明，郝跃，王昊，李培咸（2010）. GaN外延MOCVD设备反应室温度场的有限元分析及均匀性优化. 《中国科学:信息科学》.
1849. Lin-Yu Shi, Jin-Cheng Zhang, Hao Wang, Jun-Shuai Xue, Xin-Xiu Ou, Xiao-Fan Fu, Kewei Chen, Yue Hao (2010). Growth of InGaN and double heterojunction structure with InGaN back barrier.DOI
1850. Yanrong Cao, Xiao-Hua Ma, Yue Hao, Shi-Gang Hu (2010). Study on the drain bias effect on negative bias temperature instability degradation of an ultra-short p-channel metal-oxide-semiconductor field-effect transistor.DOI
1851. Xiao-Hua Ma, Hai-Xia Gao, Yan-Rong Cao, Hai-Feng Chen, Yue Hao (2010). The Anomalous Effect of Interface Traps on Generation Current in Lightly Doped Drain nMOSFET's.DOI
1852. Jun-Shuai Xue, Yue Hao, Jin-Cheng Zhang, Lin-An Yang (2010). Effect of growth temperature of AlN interlayers on the properties of GaN epilayers grown on c‐plane sapphire by metal organic chemical vapor deposition.DOI
1853. Jun-Shuai Xue, Yue Hao, Jin-Cheng Zhang, Jin-Yu Ni (2010). Improved electrical properties of the two-dimensional electron gas in AlGaN/GaN heterostructures using high temperature AlN interlayers.DOI
1854. Ling Yang, Jing-Jing Ma, Cheng Zhu, Yue Hao, Xiao-Hua Ma (2010). Degradation of AlGaN/GaN High Electron Mobility Transistors with Different AlGaN Layer Thicknesses under Strong Electric Field.DOI
1855. JunShuai Xue, Yue Hao, Xiaowei Zhou, Jincheng Zhang, Chuankai Yang, XinXiu Ou, LinYu Shi, Hao Wang, LinAn Yang, Jinfeng Zhang (2010). High quality InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition. Journal of Crystal Growth.DOI
1856. Ruihan Xiang, Y.-Y. Fang, Jiangnan Dai, L. Zhang, C.Y. Su, Zhenghao Wu, Chenhui Yu, Hui Xiong, Chuanxu Chen, Yue Hao (2010). High quality GaN epilayers grown on Si (111) with thin nonlinearly composition-graded AlxGa1−xN interlayers via metal-organic chemical vapor deposition. Journal of Alloys and Compounds.DOI
1857. Shengrui Xu, Yue Hao, J.C. Zhang, Yanrong Cao, Xiaowei Zhou, Lin‐An Yang, XinXiu Ou, Kaiwen Chen, W. Mao (2010). Polar dependence of impurity incorporation and yellow luminescence in GaN films grown by metal-organic chemical vapor deposition. Journal of Crystal Growth.DOI
1858. Jincheng Zhang, Zhiming Li, Yue Hao, Hao Wang, Peixian Li (2010). Finite element analysis and optimization of temperature field in GaN-MOCVD reactor. Science China Information Sciences.DOI
1859. Shengrui Xu, Xiaowei Zhou, Yue Hao, LiNan Yang, Jincheng Zhang, Wei Mao, Cui Yang, MaoShi Cai, XinXiu Ou, LinYu Shi, Yanrong Cao (2010). Optical and electrical properties of Si-doped in a-plane GaN grown on r-plane sapphire. Science China Technological Sciences.DOI
1860. Hailiang Zhou, Minxuan Zhang, Liang Fang, Yue Hao (2010). Performance Optimization of Conventional MOS-Like Carbon Nanotube-FETs Based on Dual-Gate-Material. IEEE Computer Society Annual Symposium on VLSI.DOI
1861. Wenping Gu, Yue Hao, Lin'an Yang, Chao Duan, Huantao Duan, Jincheng Zhang, Xiaohua Ma (2010). The effect of neutron irradiation on the AlGaN/GaN high electron mobility transistors. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics.DOI
1862. Chi-Te Huang, Jinhui Song, Wei-Fan Lee, Yong Ling Ding, Zhiyuan Gao, Yue Hao, Lih‐Juann Chen, Zhong Lin Wang (2010). GaN Nanowire Arrays for High-Output Nanogenerators. Journal of the American Chemical Society.DOI
1863. Yue Hao (2010). The Effect of Etching Time on the Quality of GaN Grown on Sapphire Substrate. Chinese Journal of Luminescence.
1864. Qingyang Yao, Lin‐An Yang, Yue Hao (2010). A comprehensive transport model for the electron mobility in AlxGa1−xN lattices-matched to GaN. IEEE International Conference on Solid-State and Integrated Circuit Technology.DOI
1865. Jinyu Ni, Yue Hao, JunShuai Xue, Zhihao Xu, Z. F. Zhang, J. C. Zhang, Luoyun Yang, J. F. Zhang (2010). Improvement of electrical properties of AlGaN/GaN heterostructures using multiple high‐temperature AlN interlayers. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics.DOI
1866. Hongxia Liu, Bin Li, Jin Li, Bo Yuan, Yue Hao (2010). Electrical characteristics of SiGe-on-insulator nMOSFET and SiGe-silicon-on-aluminum nitride nMOSFET. Chinese Physics B.DOI
1867. Hailiang Zhou, Yue Hao, Minxuan Zhang (2010). Performance optimization of MOS-like carbon nanotube-FETs with realistic source/drain contacts based on electrostatic doping. Journal of Semiconductors.DOI
1868. Jiangyi Shi, Ai-Nv An, Kang Li, Yue Hao, Peiyan Liu, Ying Jian Kang (2010). Optimization of shared memory controller for multi-core system. IEEE International Conference on Solid-State and Integrated Circuit Technology.DOI
1869. Peijun Ma, Peiyan Liu, Kang Li, You-Yang Zou, Ai-Nv An, Yanlong Wang, Yue Hao (2010). A parallel low latency bus on chip for packet processing MPSoC. IEEE International Conference on Solid-State and Integrated Circuit Technology.DOI
1870. Lin‐An Yang, Qingyang Yao, Zhang Xu-hu, Qi Liu, Yue Hao (2010). An improved electron mobility model for wurtzite ZnO. IEEE International Conference on Solid-State and Integrated Circuit Technology.DOI
1871. Kang Li, Hong Zhang, Jiandong Li, Yue Hao, Yuan-Bin Xie (2010). A multithreaded processor core with low overhead context switch for IP-packet processing. IEEE International Conference on Solid-State and Integrated Circuit Technology.DOI
1872. Hongxia Liu, Baojun Tang, Yue Hao (2010). Characteristics analysis and optimization design of a new ESD power clamp circuit. Microelectronics Reliability.DOI
1873. Hailiang Zhou, Minxuan Zhang, Da-heng Le, Yue Hao (2010). Challenges from quantum capacitance in process of high performance carbon nanotube-FETs design. International Conference on Computer Engineering and Technology.DOI
1874. Hongxia Liu, Shulong Wang, Yue Hao (2010). Modeling of enhancement factor of hole mobility for strained silicon under low stress intensity. Microelectronics Reliability.DOI
1875. Hongxia Liu, Qianwei Kuang, Zhilin Wang, Bo Gao, Shulong Wang, Yue Hao (2010). Investigation of electrical characteristics of NdAlO3/SiO2 stack gate. IEEE International Conference on Solid-State and Integrated Circuit Technology.DOI
1876. Yue Zhang, Miao Li, Yan‐Feng Li, Xiaohua Ma, Yanrong Cao, Yue Hao (2010). An improved static NBTI Model with physical geometry scaling. IEEE International Conference on Solid-State and Integrated Circuit Technology.DOI
1877. Hailiang Zhou, Minxuan Zhang, Yue Hao (2010). Performance Optimization of MOS-Like Carbon Nanotube FETs With Realistic Contacts. IEEE Transactions on Electron Devices.DOI
1878. Chi‐Te Huang, Jinhui Song, Chung‐Min Tsai, Wei‐Fan Lee, Der‐Hsien Lien, Zhiyuan Gao, Yue Hao, Lih‐Juann Chen, Zhong Lin Wang (2010). Single‐InN‐Nanowire Nanogenerator with Upto 1 V Output Voltage. Advanced Materials.DOI
1879. Hailiang Zhou, Minxuan Zhang, Yue Hao (2010). Performance optimization of MOS-like carbon nanotube-FETs based on electrostatic doping. Journal of Computational Electronics.DOI
1880. Hailiang Zhou, Minxuan Zhang, Yue Hao (2010). Effect of quantum capacitance on switching speed in T-CNFETs.DOI
1881. 陈炽，郝跃，冯辉，杨林安，马晓华，段焕涛，胡仕刚 (2009). An X-band GaN combined solid-state power amplifier. Journal of Semiconductors.
1882. 高志远，郝跃，李培咸，张进城（2009）. 高温层的横向生长对异质外延GaN结构性质的影响. 《中国科学:技术科学》.
1883. 郝跃，王冲，倪金玉，冯倩，张进城，毛维（2009）. 增强型AlGaN/GaN槽栅HEMT研制与特性分析. 《中国科学:技术科学》.
1884. 陈军峰，郝跃 (2009). A theoretical study of harmonic generation in a short period AlGaN/GaN superlattice induced by a terahertz field. Chinese Physics B.
1885. Zhi-Hua Xu, Jin-Cheng Zhang, Zhong-Fen Zhang, Qing-Yuan Zhu, Huan-Tao Duan, Yue Hao (2009). The effects of vicinal sapphire substrates on the properties of AlGaN/GaN heterostructures.DOI
1886. Zhi-Yuan Gao, Yue Hao, Jin-Cheng Zhang, Peixian Li, Wen Gu (2009). Influence of dislocations in the GaN layer on the electrical properties of an AlGaN/GaN heterostructure.DOI
1887. Long-Zhi Fan, Yue Hao, Yuan-Fu Zhao, Jin-Cheng Zhang, Zhi-Yuan Gao, Peixian Li (2009). Degraded model of radiation-induced acceptor defects for GaN-based high electron mobility transistors (HEMTs).DOI
1888. 张进成，郑鹏天，张娟，许志豪，郝跃 (2009). Degradation mechanism of two-dimensional electron gas density in high Al-content AlGaN/GaN heterostructures. Chinese Physics B.
1889. Q. Feng, Yuan Tian, Zhi-Wei Bi, Y. Yue, Jin-Yu Ni, Jin-Cheng Zhang, Yue Hao, Lin-An Yang (2009). The improvement of Al2O3/AlGaN/GaN MISHEMT performance by N2 plasma pretreatment.DOI
1890. Wen Gu, Huan-Tao Duan, Jin-Yu Ni, Yue Hao, Jin-Cheng Zhang, Q. Feng, Xiao-Hua Ma (2009). High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors.DOI
1891. 岳远征，郝跃，冯倩，张进城，马晓华，倪金玉（2009）. 超薄Al2O3绝缘栅AlGaN/GaN MOS-HEMT器件研究. 《中国科学:技术科学》.
1892. 周小伟，李培咸，郝跃（2009）. 基于AlN基板的不同Al组分的AlGaN材料生长. 《功能材料与器件学报》.
1893. 张志国，冯震，杨克武，蔡树军，郝跃（2009）. AlGaN/GaN HFET电流崩塌效应研究. 《固体电子学研究与进展》.
1894. 张国霞，马佩军，张旭，郝跃（2009）. 集成电路关键面积研究方法的发展与挑战. 《微电子学》.
1895. Wen Gu, Chi Chen, Huan-Tao Duan, Yue Hao, Jin-Cheng Zhang, Chong Wang, Q. Feng, Xiao-Hua Ma (2009). 60Co γ-rays irradiation effect in DC performance of AlGaN/GaN high electron mobility transistors.DOI
1896. 许晟瑞，郝跃，段焕涛，张进城，张金凤，周晓伟，李志明，倪金玉 (2009). Surface morphology of [110] a-plane GaN growth by MOCVD on [1■02] r-plane sapphire. Journal of Semiconductors.
1897. Huan-Tao Duan, Wen Gu, Jin-Cheng Zhang, Yue Hao, Chi Chen, Jin-Yu Ni, Sheng-Rui Xu (2009). Characterization of GaN grown on 4H-SiC and sapphire by Raman spectroscopy and high resolution XRD.DOI
1898. 段焕涛，郝跃，张进成 (2009). Effect of a high temperature AlN buffer layer grown by initially alternating supply of ammonia on AlGaN/GaN heterostuctures. Journal of Semiconductors.
1899. Huan-Tao Duan, Yue Hao, Jin-Cheng Zhang (2009). Effect of nucleation layer morphology on crystal quality, surface morphology and electrical properties of AlGaN/GaN heterostructures.DOI
1900. 许晟瑞，周小伟，郝跃，毛维，张进城，张忠芬，白琳，张金凤，李志明 (2009). Particular electrical quality of a-plane GaN films grown on r-plane sapphire by metal-organic chemical vapor deposition. Journal of Semiconductors.
1901. Si Quan, Yue Hao, Xiao-Hua Ma, Yuan-Bin Xie, Ji-Gang Ma (2009). Enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment.DOI
1902. 许志豪，张进成，段焕涛，张忠芬，朱庆玮，徐浩，郝跃 (2009). Stress,structural and electrical properties of Si-doped GaN film grown by MOCVD. Journal of Semiconductors.
1903. 倪金玉，郝跃，张进成，段焕涛，张金风（2009）. 高温AlN插入层对AlGaN/GaN异质结材料和HEMTs器件电学特性的影响. 《物理学报》.
1904. 谷文萍，张进城，王冲，冯倩，马晓华，郝跃（2009）. 60Co γ射线辐射对AlGaN/GaN HEMT器件的影响. 《物理学报》.
1905. 陈炽，郝跃，冯辉，马晓华，张进城，胡仕刚（2009）. X波段单级氮化镓固态放大器. 《西安电子科技大学学报》.
1906. 许晟瑞，段焕涛，郝跃，张进城，张金凤，倪金玉，胡仕刚，李志明（2009）. (1■02)r面蓝宝石生长的(11■0)a面氮化镓研究. 《西安电子科技大学学报》.
1907. 白俊春，李培咸，郝跃，杜阳（2009）. GaN-MOCVD系统反应室流场的数值仿真. 《电子科技》.
1908. Shi-Gang Hu, Yue Hao, Xiao-Hua Ma, Yanrong Cao, Chi Chen, Xiao-Feng Wu (2009). Study on the degradation of NMOSFETs with ultra-thin gate oxide under channel hot electron stress at high temperature.DOI
1909. Shi-Gang Hu, Yue Hao, Yanrong Cao, Xiao-Hua Ma, Xiao-Feng Wu, Chi Chen, Qing-Jun Zhou (2009). Degradation of ultra-thin gate oxide LDD NMOSFET under GIDL stress ∗.DOI
1910. Shi-Gang Hu, Yue Hao, Xiao-Hua Ma, Yan-Rong Cao, Chi Chen, Xiao-Feng Wu (2009). Hot-Carrier Stress Effects on GIDL and SILC in 90nm LDD-MOSFET with Ultra-Thin Gate Oxide.DOI
1911. Y. Yue, Yue Hao, Q. Feng, Jin-Cheng Zhang, Xiao-Hua Ma, Jin-Yu Ni（2009）. Al2O3绝缘栅AlGaN/GaN MOS-HEMT器件温度特性研究.DOI
1912. Zhiwei Bi, Yue Hao, Hongxia Liu, Linjie Liu, Qian Feng (2009). Characteristics analysis of gate dielectrics in AlGaN/GaN MIS-HEMT. IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC).DOI
1913. JunShuai Xue, Yue Hao, Jincheng Zhang, Jinyu Ni (2009). Effect of high temperature AlN interlayer on the performance of AlGaN/GaN properties. IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC).DOI
1914. Qian Feng, Limei Li, Yue Hao, Zhiwei Bi (2009). The improvement of ohmic contact of Ti/Al/Ni/Au to AlGaN/GaN HEMT by multi-step annealing method. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE.DOI
1915. Qian Feng, Limei Li, Yue Hao, Jinyu Ni, Jincheng Zhang (2009). The improvement of ohmic contact of Ti/Al/Ni/Au to AlGaN/GaN HEMT by multi-step annealing method. Solid-State Electronics.DOI
1916. Shengrui Xu, Yue Hao, J.C. Zhang, Xiaowei Zhou, Lin‐An Yang, J.F. Zhang, Hao-Ran Duan, Z.M. Li, M. Wei, Songxiang Hu, Yanrong Cao, Qiuju Zhu, Zhihao Xu, Wen-Ping Gu (2009). Improvements in a-plane GaN crystal quality by AlN/AlGaN superlattices layers. Journal of Crystal Growth.DOI
1917. Jinyu Ni, Yue Hao, Jincheng Zhang, LinAn Yang (2009). Effect of reactor pressure on the growth rate and structural properties of GaN films. 《中国科学通报：英文版》.DOI
1918. Qian Feng, Yue Hao, Yuanzheng Yue (2009). The reduction of gate leakage of AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors by N2plasma pretreatment. Semiconductor Science and Technology.DOI
1919. Zhang Zhongfen, Jincheng Zhang, Zhihao Xu, Huantao Duan, Yue Hao (2009). High temperature electron transport properties of AlGaN/GaN heterostructures with different Al-contents. Science in China. Series G, Physics, mechanics & astronomy/Science in China. Series G, Physics, Mechanics & Astronomy.DOI
1920. Linan Yang, Yue Hao, Jincheng Zhang (2009). Use of AlGaN in the notch region of GaN Gunn diodes. Applied Physics Letters.DOI
1921. Ruihan Xiang, Jiangnan Dai, L. Zhang, Yihua Gao, Zhihao Wu, C. Q. Chen, Qian Feng, Yue Hao (2009). Effects of the thickness of low-temperature AlN interlayers on GaN layers grown on Si(111) substrates by MOCVD. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE.DOI
1922. Yuanbin Xie, Weitao Pan, Peijun Ma, Yue Hao (2009). The size optimize of DCVSPG logic. IEEE International Conference on ASIC (ASICON).DOI
1923. Yue Hao (2009). The Evaluation on Electromigration Reliability of Copper Interconnect Structures with Extension. Research & Progress of SSE Solid State Electronics.
1924. Hongxia Liu, Qianwei Kuang, Suzhen Luan, Yue Hao (2009). Performance analysis of dual-material gate SOI MOSFET. IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC).DOI
1925. X. H., Yanrong Cao, Hong-Wun Gao, H. F. Chen, Yue Hao (2009). Behaviors of gate induced drain leakage stress in lightly doped drain n-channel metal-oxide-semiconductor field-effect transistors. Applied Physics Letters.DOI
1926. Z.M. Li, Yue Hao, J.C. Zhang, Lin‐An Yang, Shengrui Xu, Yongming Chang, Z.W. Bi, Xuan Zhou, Jinyu Ni (2009). Thermal transportation simulation of a susceptor structure with ring groove for the vertical MOCVD reactor. Journal of Crystal Growth.DOI
1927. Zhiyuan Gao, Yong Ling Ding, Shisheng Lin, Yue Hao, Zhong Lin Wang (2009). Dynamic fatigue studies of ZnO nanowires by in‐situ transmission electron microscopy. physica status solidi (RRL) - Rapid Research Letters.DOI
1928. Zhiyuan Gao, Jun Zhou, Yudong Gu, Peng Fei, Yue Hao, Gang Bao, Zhong Lin Wang (2009). Erratum: “Effects of piezoelectric potential on the transport characteristics of metal-ZnO nanowire-metal field effect transistor” [J. Appl. Phys. 105, 113707 (2009)]. Journal of Applied Physics.DOI
1929. Hailiang Zhou, Bingcai Sui, Yaqing Chi, Minxuan Zhang, Yue Hao (2009). Numerical study of DIBL effect in Carbon Nanotube-FETs. International Conference on Nanotechnology.
1930. Liu Hongxia, Kuang Qianwei, Luan Suzhen, Yue Hao, Zhao Aaron, Tallavarjula Sai (2009). Investigation of frequency dispersion effect in HfO2/SiO2 Gate Stack. IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).DOI
1931. Zhiyuan Gao, Jun Zhou, Yudong Gu, Peng Fei, Yue Hao, Gang Bao, Zhong Lin Wang (2009). Effects of piezoelectric potential on the transport characteristics of metal-ZnO nanowire-metal field effect transistor. Journal of Applied Physics.DOI
1932. Yue Hao (2009). Development of Critical Area Research Method for Integrated Circuits and Its Challenges.
1933. 王冲，岳远征，马晓华，郝跃，冯倩，张进城（2008）. MOS AlGaN/GaN HEMT研制与特性分析. Journal of Semiconductors.
1934. 高志远，郝跃，李培咸，张进城（2008）. 异质外延GaN中穿透位错对材料发光效率的影响. Journal of Semiconductors.
1935. 段超，谷文萍，郝跃，张进城（2008）. 60 Co γ射线辐照对AlGaN/GaN HEMT器件直流特性的影响. 《第十五届全国化合物半导体材料，微波器件和光电器件学术会议》.
1936. Y. Yue, Yue Hao, Jin-Cheng Zhang, Q. Feng, Jin-Yu Ni, Xiao-Hua Ma (2008). A study on Al2O3 passivation in GaN MOS-HEMT by pulsed stress.DOI
1937. 岳远征，郝跃，张进城，冯倩（2008）. AlGaN/GaN HEMTs表面钝化抑制电流崩塌的机理研究(英文). 《西安电子科技大学学报》.
1938. 杨凌，马晓华，冯倩，郝跃 (2008). Reliability analysis of GaN-based light emitting diodes for solid state illumination. Chinese Physics B.
1939. 张金风，毛维，张进城，郝跃 (2008). The low-temperature mobility of two-dimensional electron gas in AlGaN/GaN heterostructures. Chinese Physics B.
1940. 王欣娟，张金凤，张进城，郝跃（2008）. AlGaN/GaN肖特基结参数分析与电流运输机理研究. 《物理学报》.
1941. 谷文萍，郝跃，张进城，马晓华（2008）. 不同高场应力下SiN钝化的AlGaN/GaN HEMT器件的性能退化. 《第十五届全国化合物半导体材料，微波器件和光电器件学术会议论文集》.
1942. 高志远，段焕涛，郝跃，李培咸，张金凤（2008）. GaN薄膜大型V形表面坑的形成和光学性质(英文). 《材料研究学报》.
1943. 张金风，郝跃（2008）. GaN高电子迁移率晶体管的研究进展. 《电力电子技术》.
1944. 段超，谷文萍，郝跃，张进城（2008）. 60Co γ射线辐照对AlGaN/GaN HEMT器件直流特性的影响. 《半导体技术》.
1945. 张金风，郝跃，张进城，倪金玉（2008）. 变Al组分AlGaN/GaN结构中的二维电子气迁移率. 《中国科学:技术科学》.
1946. 王冲，张金凤，全思，郝跃，张进城，马晓华（2008）. 增强型AlGaN/GaN槽栅HEMT(英文). Journal of Semiconductors.
1947. 高志远，郝跃，张进城，张金凤，倪金玉（2008）. KOH热湿腐蚀法准确估算GaN的位错密度(英文). 《功能材料与器件学报》.
1948. Yanrong Cao, Shi-Gang Hu, Xiao-Hua Ma, Yue Hao (2008). Mechanism of NBTI Recovery under Negative Voltage Stress.DOI
1949. Yan-Rong Cao, Yue Hao, Xiao-Hua Ma, Lei Yu, Shi-Gang Hu (2008). SILC during NBTI Stress in PMOSFETs with Ultra-Thin SiON Gate Dielectrics.DOI
1950. Shi-Gang Hu, Yanrong Cao, Yue Hao, Xiao-Hua Ma, Chi Chen, Xiao-Feng Wu, Qing-Jun Zhou (2008). Degradation of Ultra-Thin Gate Oxide NMOSFETs under CVDT and SHE Stresses.DOI
1951. Li‐Syuan Lu, Zhiyuan Gao, Bo Shen, Feifan Xu, S. Huang, Z. L. Miao, Yue Hao, Zhaohui Yang, G. Y. Zhang, X. P. Zhang, J. Xu, Dapeng Yu (2008). Microstructure and origin of dislocation etch pits in GaN epilayers grown by metal organic chemical vapor deposition. Journal of Applied Physics.DOI
1952. Yuanzheng Yue, Yue Hao, Jincheng Zhang (2008). AlGaN/GaN MOS-HEMT with Stack Gate HfO2/Al2O3 Structure Grown by Atomic Layer Deposition. Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium.DOI
1953. Yuanzheng Yue, Yue Hao, J. C. Zhang (2008). Improved Microwave Performance of AlGaN/GaN MOS-HEMT with Stack Gate HfO2/Al2O3 Structure. International Conference on Solid State Devices and Materials (SSDM).DOI
1954. Zhiyuan Gao, Yue Hao, Peixian Li, Jincheng Zhang (2008). Role of lateral growth on the structural properties of high temperature GaN layer. Science China Technological Sciences.DOI
1955. Zhiyuan Gao, Yue Hao, Jinfeng Zhang, Peixian Li, Jincheng Zhang (2008). Influence of lateral growth on the optical properties of GaN epitaxial layers. International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).DOI
1956. Yuanzheng Yue, Yue Hao, Jincheng Zhang, Jinyu Ni, Wei Mao, Qian Feng, Linjie Liu (2008). AlGaN/GaN MOS-HEMT With $\hbox{HfO}_{2}$ Dielectric and $\hbox{Al}_{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition. IEEE Electron Device Letters.DOI
1957. Jinfeng Zhang, JinFeng Zhang, Yue Hao, JinCheng Zhang, Jincheng Zhang, Jinyu Ni (2008). The mobility of two-dimensional electron gas in AlGaN/GaN heterostructures with varied Al content. Science in China Series F Information Sciences.DOI
1958. Yue Hao, Chong Wang, Jinyu Ni, Qian Feng, Jincheng Zhang, Wei Mao (2008). Development and characteristic analysis of enhancement-mode recessed-gate AlGaN/GaN HEMT. Science China Technological Sciences.DOI
1959. Junping Wang, Yue Hao, Junming Zang, Guangliang Ren, Hao Ni (2008). WCA with size and space distribution of real defects for 65–90nm processes. International Conference on Anti-counterfeiting, Security, and Identification.DOI
1960. Yue Hao (2008). A Predictor Basing on Two-Pattern Structure. Microelectronics & Computer.
1961. 李培咸，郝跃（2007）. MOCVD制备InxGa1-xN/GaN MQWs的温度依赖性. 《光子学报》.
1962. 刘杰，郝跃，冯倩，王冲，张进城，郭亮良（2007）. 基于I-V-T和C-V-T的GaN上Ni/Au肖特基接触特性研究. 《物理学报》.
1963. 范隆，郝跃（2007）. 辐射感生应力弛豫对AlmGa1-mN/GaN HEMT电学特性的影响. 《物理学报》.
1964. 郝跃，岳远征，冯倩，张进城，马晓华，倪金玉（2007）. fmax为30.8GHz的超薄Al2O3绝缘栅GaN MOS-HEMT器件（英文）. Journal of Semiconductors.
1965. 龚欣，吕玲，郝跃，李培咸，周小伟，陈海峰（2007）. p-GaN ICP刻蚀损伤研究. Journal of Semiconductors.
1966. 高志远，郝跃，张进城，张金凤，陈海峰，倪金玉（2007）. 用原子力显微镜和扫描电镜研究GaN外延层中的位错腐蚀坑(英文). Journal of Semiconductors.
1967. 马香柏，张进城，郭亮良，冯倩，郝跃（2007）. 钝化与场板结构对AlGaN/GaN HEMT电流崩塌的影响. Journal of Semiconductors.
1968. 周鹏举，马晓华，曹艳荣，郝跃（2007）. 90nm NMOS器件TDDB击穿特性研究. 《半导体技术》.
1969. 韩红波，郝跃，冯辉，李德昌（2007）. LDMOS微波功率放大器分析与设计. 《半导体技术》.
1970. 刘杰，王冲，冯倩，张进诚，郝跃，杨艳，龚欣（2007）. ICP刻蚀损伤对n-Ga N-Ni/Au肖特基接触特性的影响. 《半导体技术》.
1971. 李永坤，郝跃，罗宏伟（2007）. ESD电热模拟分析. 《半导体技术》.
1972. 古妮娜，郝跃，李儒章，朱志炜，谢孟贤，杨卫东（2007）. 基于STFOD结构的IC全芯片保护. 《微电子学》.
1973. 马香柏，张进城，郝跃，冯倩（2007）. 应力对GaN HEMT器件电流崩塌的影响. 《微电子学》.
1974. Zhi-Wei Zhu, Yue Hao, Xiao-Hua Ma (2007). Effect of Snapback Stress on Gate Oxide Integrity of nMOSFET in 90nm Technology.
1975. Hai-Feng Chen, Yue Hao, Xiao-Hua Ma, Yan-Rong Cao, Zhi-Yuan Gao, Xin Gong (2007). Comparison of hot-hole injections in ultrashort channel LDD nMOSFETs with ultrathin oxide under an alternating stress.DOI
1976. Y. Yue, Yue Hao, Q. Feng, Jin-Cheng Zhang, Xiao-Hua Ma, Jin-Yu Ni (2007). GaN MOS-HEMT Using Ultra-Thin Al2O3 Dielectric Grown by Atomic Layer Deposition.DOI
1977. Liang-Liang Guo, Q. Feng, Xiang-Bai Ma, Yue Hao, Jie Liu (2007). Relation between breakdown voltage and current collapse in GaN FP-HEMTs.DOI
1978. Yue Hao, Y. Yue, Q. Feng, Jin-Cheng Zhang, Xiao-Hua Ma, Jin-Yu Ni (2007). GaN MOS-HEMT Using Ultrathin Al2O3 Dielectric with fmax of 30.8GHz.
1979. Zhiyuan Gao, Yue Hao, Jincheng Zhang, Jinfeng Zhang, Haifeng Chen, Jinyu Ni (2007). Polarity results in different etch pit shapes of screw and edge dislocations in GaN epilayers. International Workshop on Electron Devices and Semiconductor Technology (EDST).DOI
1980. Minge Jing, Yue Hao, Dian Zhou, Xuan Zeng (2007). A Novel Optimization Method for Parametric Yield: Uniform Design Mapping Distance Algorithm. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.DOI
1981. Xuefeng Zheng, Weidong Zhang, Jian Zhang, Yue Hao (2007). Non-Uniform Distribution of Electron Traps Generated by FN Stress in Silicon Dioxides. ECS Transactions.DOI
1982. Junping Wang, Junming Zhang, Yue Hao (2007). IC Image Segmentation Using Eigenvalue Clustering.DOI
1983. Yue Hao (2007). BIST for NoC Crosstalk Based on Packet Network Structure.
1984. Yue Hao (2007). Research on TDDB of 90nm NMOS Device. Semiconductor Technology.
1985. Yue Hao (2007). IP-Based Design Methodology for 8 Bit MCU. Dianzi qijian.
1986. Lin‐An Yang, Chun-Li Yu, Yue Hao (2007). A new model of subthreshold swing for sub-100nm MOSFETs. Microelectronics Reliability.DOI
1987. 张金风，郝跃（2006）. NuAlGaN/GaN HEMT中慢瞬态的数值解释(英文). Journal of Semiconductors.
1988. 王冲，张金风，杨燕，郝跃，冯倩，张进城（2006）. 变温C-V和传输线模型测量研究AlGaN/GaN HEMT温度特性. Journal of Semiconductors.
1989. 李康，马晓华，郝跃，陈海峰，王俊平（2006）. 深亚微米电路N MOS器件HCI退化建模与仿真. 《西安电子科技大学学报》.
1990. 朱志炜，郝跃，方建平，刘红侠（2006）. 静电放电应力下深亚微米栅接地NMOSFET源端热击穿机理. 《西安电子科技大学学报》.
1991. 林锡贵，郝跃，冯倩，张进城（2006）. AlGaN/GaN HEMT功率放大器设计. 《半导体技术》.
1992. 王冲，郝跃，冯倩，郭亮良（2006）. 氮化镓干法刻蚀研究进展. 《半导体技术》.
1993. 郭荣辉，赵正平，郝跃，刘玉贵，武一斌，吕苗（2006）. 铟量子点实现单电子晶体管方法. 《西安电子科技大学学报》.
1994. 阙金珍，刘红侠，郝跃（2006）. 电荷泵电路功耗优化设计及改进. 《微电子学》.
1995. 许晟瑞，冯辉，郝跃，李德昌（2006）. 射频LDMOS电容特性研究. 《现代电子技术》.
1996. 王冲，张金风，郝跃，冯倩，杨燕，张进城（2006）. AlGaN/GaN HEMT在N2中高温退火研究. 《西安电子科技大学学报》.
1997. 王冲，张进城，郝跃，杨燕（2006）. AlGaN/GaN HEMT高场应力退化及紫外光辐照的研究. Journal of Semiconductors.
1998. 孙晓丽，郝跃，宋国乡（2006）. IC缺陷轮廓分形维估计的小波方法. 《电子学报》.
1999. 马香柏，郝跃，张进城（2006）. 微波功率AlGaN/GaN HEMT的研究进展. 《电子科技》.
2000. 史江一，马晓华，郝跃，方建平，朱志炜（2006）. 超深亚微米高速互连的信号串扰研究. 《固体电子学研究与进展》.
2001. 杨燕，王文博，郝跃（2006）. AlGaN/GaN异质结构的欧姆接触. Journal of Semiconductors.
2002. 龚欣，马琳，张晓菊，张金凤，杨燕，郝跃（2006）. npn AlGaN/GaN HBT模型与特性分析. Journal of Semiconductors.
2003. 王俊平，郝跃（2006）. 真实缺陷的矩形模型及其关键面积计算. 《电子学报》.
2004. 王冲，张进城，郝跃，杨燕（2006）. 4H-SiC衬底AlGaN/GaN HEMTs台面隔离技术的改进. 《功能材料与器件学报》.
2005. 杨燕，郝跃，张进城，王冲，冯倩（2006）. AlGaN势垒层应变弛豫度对高Al含量AlxGa1-xN/GaN HEMT性能的影响. 《中国科学:技术科学》.
2006. 赵天绪，段旭朝，郝跃（2006）. 集成电路互连线寿命的工艺缺陷影响分析. 《计算机学报》.
2007. 李培咸，郝跃（2006）. 用于高质量InGaN/GaN MQWs制备的MOCVD配气系统. 《真空科学与技术学报》.
2008. 王俊平，任春丽，冯倩，张会宁，郝跃（2006）. GaN薄膜表面缺陷密度的提取. 《微电子学与计算机》.
2009. 杜鸣，郝跃（2006）. CMOS工艺中栅耦合ESD保护电路. 《西安电子科技大学学报》.
2010. Yuanzheng Yue, Yue Hao, Jincheng Zhang, Qian Feng (2006). Study of Surface Passivation with Different a-SiNBxB:H Films Effect on AlGaN/GaN HEMTs. International Conference on Solid-State and Integrated Circuit Technology (ICSICT).DOI
2011. 王冲，冯倩，郝跃，杨燕（2006）. 感应耦合等离子体选择性刻蚀GaN/AlGaN. 《西安电子科技大学学报》.
2012. Xiao-Hua Ma, Yue Hao, Jian-Ping Wang, Yan-Rong Cao, Hai-Feng Chen (2006). New aspects of HCI test for ultra-short channel n-MOSFET devices.DOI
2013. Hai-Feng Chen, Yue Hao, Xiao-Hua Ma, Jin-Cheng Zhang, Kang Li, Yan-Rong Cao, Jinfeng Zhang, Peng-Ju Zhou (2006). Investigation of the characteristics of GIDL current in 90nm CMOS technology.DOI
2014. Xiao-Hua Ma, Yue Hao, Bao-Gang Sun, Hai-Xia Gao, Hong-Xia Ren, Jin-Cheng Zhang, Jin-Feng Zhang, Xiao-Ju Zhang, Wei-dong Zhang (2006). Fabrication and characterization of groove-gate MOSFETs based on a self-aligned CMOS process.DOI
2015. Yue Hao, Xin-Wei Han, Jin-Cheng Zhang, Jin-Feng Zhang (2006). Current slump mechanism and its physical model of AlGaN/GaN HEMTs under DC bias.DOI
2016. Yan Yang, Yue Hao, Jincheng Zhang, Chong Wang, Qian Feng (2006). Impact of strain relaxation of AlGaN barrier layer on the performance of high Al-content AlGaN/GaN HEMT. Science China Technological Sciences.DOI
2017. Daoguang Liu, Shiliu Xu, Yue Hao, Jun Xu, P Qian, Z Liu, Gangyi Hu, J Zhang, Z. Zhang, R Liu, L Liu, R Li, K He, Y Liu, Ge-Ge Chen, U. König, Horst Kibbel, A. Gruhle, U. Seiler, Kunquan Li (2006). Self-Aligned SiGe HBT Based on Combined Dry and Wet Etching. ECS Transactions.DOI
2018. Hongxia Liu, Yue Hao (2006). Interaction of NBTI with Hot Carriers in PMOSFET's for Advanced CMOS Technologies. International Conference on Solid-State and Integrated Circuit Technology (ICSICT).DOI
2019. Yue Hao, Lin‐An Yang, Chun-Li Yu (2006). An optimization technique for parameter extraction of ultra-deep submicron LDD MOSFET’s. Solid-State Electronics.DOI
2020. Daoguang Liu, Shiliu Xu, Yue Hao (2006). Self-Sligned SiGe HBT Based on Combined Dry and Wet Etching. ECS Meeting Abstracts.DOI
2021. Lin‐An Yang, Yue Hao, Chun-Li Yu, Feng-Yan Han (2006). An improved substrate current model for ultra-thin gate oxide MOSFETs. Solid-State Electronics.DOI
2022. Junping Wang, Yue Hao (2006). Yield Modeling of Arbitrary Defect Outline. International Conference on Solid-State and Integrated Circuit Technology (ICSICT).DOI
2023. Haifeng Chen, Yue Hao, Zhiwei Zhu, Xiaohua Ma, Yanrong Cao (2006). Investigation of Gate-Induced Drain Leakage Current in Ultra-thin Gate Oxide LDD nMOSFET's. International Conference on Solid-State and Integrated Circuit Technology (ICSICT).DOI
2024. Daoguang Liu, Jun Xu, Shiliu Xu, Yue Hao, Peixin Qian, Zhihong Liu, Gangyi Hu, Zhengfan Zhang, Jing Zhang, Rongkan Liu, Luncai Liu, Rongqiang Li, Kaiquan He, Yukui Liu, Guangbing Chen, U. Koenig, Horst Kibbel, A. Gruhle, U. Seiler, Kaicheng Li (2006). SiGe HBT Device in Mixed Dry Wet Etching. IEEE International Conference on Nano/Micro Engineered and Molecular Systems.DOI
2025. Lin‐An Yang, Chun-Li Yu, Yue Hao (2006). Channel resistance method for parameter extraction of ultra-thin gate oxide LDD MOSFET's. International Conference on Solid-State and Integrated Circuit Technology (ICSICT).DOI
2026. Chun-Li Yu, Yue Hao, Lin‐An Yang (2006). On the Self-Limiting Hot-Carrier Degradation Mechanism in Ultra-deep Submicrometer Lightly-doped-drain NMOSFET's. International Conference on Solid-State and Integrated Circuit Technology (ICSICT).DOI
2027. 王俊平，郝跃（2005）. 基于LS空间的IC真实缺陷图像的分割. 《电子学报》.
2028. 赵天绪，段旭朝，郝跃（2005）. 基于制造成品率模型的集成电路早期可靠性估计. 《电子学报》.
2029. 方建平，郝跃，刘红侠，李康（2005）. 应用混合游程编码的SOC测试数据压缩方法. 《电子学报》.
2030. 杨燕，王平，郝跃，张进城，李培咸（2005）. AlGaN/GaN高电子迁移率晶体管解析模型. 《电子学报》.
2031. 刘坚斌，李培咸，郝跃（2005）. 高亮度GaN基蓝光与白光LED的研究和进展. 《量子电子学报》.
2032. 任红霞，张晓菊，郝跃（2005）. 深亚微米槽栅PMOS结构对抗热载流子效应的影响. 《固体电子学研究与进展》.
2033. 荆明娥，郝跃，马佩军（2005）. 集成电路参数中心值和容差的耦合设计方法. 《电子与信息学报》.
2034. 杜鸣，郝跃（2005）. 超深亚微米集成电路的铜互连技术布线工艺与可靠性. 《西安电子科技大学学报》.
2035. 王冲，郝跃，张进城（2005）. AlGaN/GaN HEMT研制及特性分析. 《西安电子科技大学学报》.
2036. 王俊平，郝跃，荆明娥（2005）. IC真实缺陷的骨架提取方法. 《西安电子科技大学学报》.
2037. 杨燕，郝跃（2005）. 蓝宝石衬底上AlGaN/GaN HEMT自热效应研究. 《固体电子学研究与进展》.
2038. 冯倩，郝跃，王峰祥（2005）. GaN:Si薄膜的结构和应力特性研究. 《固体电子学研究与进展》.
2039. 刘道广，郝跃，徐世六，李开成，刘玉奎，刘嵘侃，张静，胡辉勇，李培咸，张晓菊，徐学良（2005）. 基于自对准和空气桥工艺的SiGe HBT研究. 《西安电子科技大学学报》.
2040. 王冲，刘道广，郝跃，张进城（2005）. 基于AlGaN/GaNHEMT的功率放大器的研究进展. 《微电子学》.
2041. 郝跃，邵波涛，马晓华，韩晓亮，王剑屏（2005）. ULSI中铜互连及其可靠性的研究与进展. 《西安电子科技大学学报》.
2042. 龚欣，张进城，郝跃（2005）. 一种新型介质槽隔离SiCOIMESFET. 《固体电子学研究与进展》.
2043. 周小伟，郝跃，张春福，张进城（2005）. 不同厚度未掺杂GaN薄膜的特性分析. 《电子器件》.
2044. 张春福，郝跃，周小伟，李培咸，邵波涛（2005）. AlGaN PIN紫外探测器的结构及性能分析. 《电子器件》.
2045. 杨燕，郝跃（2005）. 纤锌矿型GaN电子迁移率的计算. 《西安电子科技大学学报》.
2046. 张进城，王冲，杨燕，张金凤，冯倩，李培咸，郝跃（2005）. AlN阻挡层对AlGaN/GaN HEMT器件的影响. Journal of Semiconductors.
2047. 张春福，郝跃，张金凤，龚欣（2005）. AlGaN基PIN光电探测器的模型与模拟. Journal of Semiconductors.
2048. Chun-Fu Zhang, Yue Hao, Hai-Long You, Jin-Feng Zhang, Xiao-Wei Zhou (2005). Influence of interface dipoles on the UV/solar rejection ratios of GaN/AlGaN/GaN photodetectors.DOI
2049. GongXin, Zhang Jincheng, Yue Hao (2005). Optimization of device structure of SiCOI MESFET with dielectric groove isolation. International Conference on Solid-State and Integrated Circuits Technology.DOI
2050. Jinfeng Zhang, Yue Hao (2005). AlGaN/GaN heterostructures: the dependences of electron density and mobility on barrier alloy composition. International Conference on Solid-State and Integrated Circuits Technology.DOI
2051. Yue Hao (2005). Study of Self-heating on AlGaN/GaN HEMTs Grown on Sapphire Substrate.
2052. Yue Hao (2005). Research and development of high brightness GaN-based blue LED and white LED. Chinese Journal of Quantum Electronics.
2053. Junping Wang, Yue Hao (2005). Short Critical Area Computational Method Using Mathematical Morphology. Lecture notes in computer science.DOI
2054. Chun-Li Yu, Yue Hao, Lin‐An Yang (2005). A simple method for effective channel length, series resistance and mobility extraction in deep-submicron MOSFETs. International Conference on Solid-State and Integrated Circuits Technology.DOI
2055. 龚欣，张进城，郝跃，李培咸（2004）. 6H-SiCOI MESFET器件结构参数对其特性的影响. 《微电子学》.
2056. 韩晓亮，郝跃，刘红霞（2004）. 影响PMOSFET中NBTI效应的相关因素研究. 《微电子学》.
2057. 郑雪峰，郝跃，刘红侠，李培咸，刘道广，韩晓亮（2004）. 闪速存储器中的热载流子可靠性研究. 《西安电子科技大学学报》.
2058. 王峰祥，郝跃（2004）. AlGaN紫外光电导探测器的研究. 《现代电子技术》.
2059. 冯倩，王峰祥，郝跃（2004）. MOCVD生长GaN和GaN∶Mg薄膜的对比研究. 《红外与毫米波学报》.
2060. 张进城，郝跃，王冲，王峰祥（2004）. 基于蓝宝石衬底的高性能AlGaN/GaN二维电子气材料与HEMT器件. Journal of Semiconductors.
2061. 荆明娥，郝跃（2004）. VLSI成品率重心游移算法的一个几何解释. Journal of Semiconductors.
2062. 龚欣，张进城，郝跃（2004）. 多台阶介质槽隔离的SiCOI MESFET器件. Journal of Semiconductors.
2063. 张伟功，蒋轩祥，唐雪寒，郝跃（2004）. 基于LDO限流技术的辐射闩锁防护技术. 《西安电子科技大学学报》.
2064. 郝跃（2004）. 培养具有微电子思想的IC设计人才. 《现代电子技术》.
2065. 杨燕，郝跃，张进城，李培咸（2004）. GaN基微波半导体器件研究进展. 《西安电子科技大学学报》.
2066. 荆明娥，郝跃，赵天绪，马佩军（2004）. 集成电路分档成品率的效益优化模型及求解. 《西安电子科技大学学报》.
2067. Jinfeng Zhang, Jin-Cheng Zhang, Yue Hao (2004). Temperature dependence of Hall electron density of GaN-based heterostructures.DOI
2068. Minge Jing, Yue Hao, Jinfeng Zhang, Peijun Ma (2004). Efficient parametric yield optimization of VLSI circuit by uniform design sampling method. Microelectronics Reliability.DOI
2069. Xiaoju Zhang, Xiao‐Hua Ma, Hongxia Ren, Yue Hao, Bao‐Gang Sun (2004). Study on 0.1 micron grooved-gate CMOS. International Conference on Solid-State and Integrated Circuits Technology.DOI
2070. 冯倩，段猛，郝跃（2003）. SiC衬底上异质外延GaN薄膜XPS谱和PL谱研究. 《光子学报》.
2071. 范隆，郝跃，严荣良，陆妩（2003）. Si3N4/SiO2复合栅介质电离辐照的电子能谱分析. 《西安电子科技大学学报》.
2072. 张金凤，郝跃（2003）. AlGaN/GaN中二维电子气研究新进展. 《西安电子科技大学学报》.
2073. 郝跃（2003）. 发展微电子技术,迎接信息化的挑战. 《现代电子技术》.
2074. 李培咸，郝跃，范隆，张进城，张金凤，张晓菊（2003）. 基于量子微扰的AlGaN/GaN异质结波函数半解析求解. 《物理学报》.
2075. 段猛，郝跃（2003）. GaN基蓝色LED的研究进展. 《西安电子科技大学学报》.
2076. 郝跃，荆明娥，马佩军（2003）. VLSI集成电路参数成品率及优化研究进展. 《电子学报》.
2077. 冯倩，郝跃，刘玉龙（2003）. GaN薄膜拉曼散射光谱的研究. 《第十二届全国光散射学术会议》.
2078. 冯倩，段猛，郝跃（2003）. SiC衬底上异质外延GaN薄膜XRD和Raman散射光谱的研究. 《第十二届全国光散射学术会议》.
2079. 郝跃，韩晓亮，刘红侠（2003）. 超深亚微米P+栅PMOSFET中NBTI效应及其机理研究. 《电子学报》.
2080. 张进城，马晓华，郝跃，范隆，李培咸（2003）. 纤锌矿GaN低场电子迁移率解析模型. Journal of Semiconductors.
2081. 范隆，李培咸，郝跃（2003）. AlGaN/GaN异质结辐射感生界面态电荷对二维电子气输运的影响. Journal of Semiconductors.
2082. 赵天绪，段旭朝，马佩军，郝跃（2003）. 基于关键面积的冗余集成电路成品率分析. Journal of Semiconductors.
2083. 龚欣，张进城，郝跃，张晓菊（2003）. 4H-SiC npn BJT特性研究. 《电子学报》.
2084. 张晓菊，任红霞，马晓华，郝跃（2003）. 槽栅结构对小尺寸MOS器件特性的影响. 《微电子学与计算机》.DOI
2085. 范隆，郝跃，冯倩，段猛（2003）. SiC/AlN上外延GaN薄膜的黄带发光与晶体缺陷的关系. 《光子学报》.
2086. 冯倩，段猛，郝跃（2003）. SiC衬底上异质外延GaN薄膜结构缺陷对黄光辐射的影响. 《光子学报》.
2087. 韩晓亮，郝跃（2003）. NBTI和HCI混合效应对PMOSFET特性退化的影响. 《西安电子科技大学学报》.
2088. 朱志炜，郝跃，赵天绪，张进城（2003）. 等离子体工艺引起的MOSFET栅氧化层损伤. 《固体电子学研究与进展》.
2089. 范隆，郝跃，余学峰（2003）. Si/SiO2及Si/SiO2/Si3N4系统的总剂量辐射损伤. 《西安电子科技大学学报》.
2090. L. Fan, Yue Hao (2003). Comment on "Annealing behavior of a proton irradiated Al/sub x/Ga/sub 1-x/N/GaN high electron mobility transistors grown by MBE". IEEE Transactions on Electron Devices.DOI
2091. Hongxia Liu, Yue Hao, Zhi Jie Sun (2003). An efficient optimization algorithm in integrated circuit reliability design. Semiconductor Science and Technology.DOI
2092. Daoguang Liu, Siliu Xu, Kaicheng Li, Jin Zhang, Rongkan Liu, Yukui Liu, Zhengfan Zhang, Gangyi Hu, Yue Hao (2003). Growth and quality control of MBE-based SiGe-HBT for amplifier applications. Microelectronics Journal.DOI
2093. Yue Hao (2003). The Influence of Grooved-gate Structure on the Property of Small Size MOSFET’s. Microelectronics & Computer.
2094. Hongxia Ren, Xiaoju Zhang, Yue Hao, Donggang Xu (2003). Study on the relation between structure and hot carrier effect immunity for deep sub-micron grooved gate NMOSFET’S. Journal of Electronics (China).DOI
2095. 荆明娥，王宇平，郝跃（2002）. 基于产品最优分档的集成电路整体效益优化模型. 《西安电子科技大学学报》.
2096. 任红霞，马晓华，郝跃（2002）. 深亚微米槽栅PMOSFET短沟道效应的模拟研究. 《西安电子科技大学学报》.
2097. 张进城，郝跃，赵天绪，王剑屏（2002）. SiC新型半导体器件及其应用. 《西安电子科技大学学报》.
2098. 马佩军，郝跃（2002）. 提高成品率的VLSI互连线线宽优化. 《西安电子科技大学学报》.
2099. 刘海波，郝跃，张进城，刘道广（2002）. LDD NMOS器件热载流子退化研究. 《微电子学》.
2100. 王剑屏，郝跃，彭军，朱作云，张永华（2002）. 碳化硅异质外延薄膜生长及表面缺陷研究. 《西安电子科技大学学报》.
2101. 任红霞，荆明娥，郝跃（2002）. 杂质浓度对槽栅PMOSFET抗热载流子特性的影响. 《固体电子学研究与进展》.
2102. 任红霞，郝跃（2002）. 凹槽拐角对深亚微米槽栅PMOSFET特性的影响. 《固体电子学研究与进展》.
2103. 赵天绪，郝跃，马佩军（2002）. 基于IC互连线开路故障的Y/R模型. 《电子学报》.
2104. 刘红侠，郝跃（2002）. 脉冲应力增强的NMOSFET′s热载流子效应研究. 《电子学报》.
2105. 郝跃，张金凤（2002）. AlGaN/GaN界面特性研究进展. 《微纳电子技术》.
2106. 朱志炜，郝跃，张进城（2002）. 等离子体边缘损伤的横向分布测量. 《西安电子科技大学学报》.
2107. 刘红侠，郝跃（2002）. 衬底热空穴导致的薄栅介质经时击穿的物理模型研究1. 《电子科技》.
2108. Xiaohong Jiang, Yue Hao, Susumu Horiguchi (2002). A new approach for critical area estimation in VLSI. Journal of Systems Architecture.DOI
2109. Tianxu Zhao, Yue Hao, Peijun Ma, Taifeng Chen (2002). Relation between reliability and yield of ICs based on discrete defect distribution model. Proceedings.DOI
2110. Hongxia Liu, Yue Hao, Jian-Gang Zhu (2002). A thorough investigation of hot-carrier-induced gate oxide breakdown in partially depleted N- and P-channel SIMOX MOSFETs. Microelectronics Reliability.DOI
2111. Daoguang Liu, Kaicheng Li, W.-X. Ni, Yue Hao, Jing Zhang, Zhengfan Zhang, Shiliu Xu, Gangyi Hu, L. Jay Guo (2002). Comparison between MBE-based SiGe/Si HBT and Si-based bipolar transistor technologies. International Conference on Solid-State and Integrated Circuit Technology (ICSICT).DOI
2112. Hongxia Liu, Yue Hao (2002). A new method of thin gate SiO 2 reliability characterization. Surface and Interface Analysis.DOI
2113. Hongxia Ren, Yue Hao (2002). The influence of geometric structure on the hot-carrier-effect immunity for deep-sub-micron grooved gate PMOSFET. Solid-State Electronics.DOI
2114. Hongxia Liu, Yue Hao, Jiangang Zhu (2002). A study on hot-carrier-induced gate oxide breakdown in partially depleted SIMOX MOSFET’s. Journal of Electronics (China).DOI
2115. Hongxia Ren, Yue Hao (2002). Effect of impurity concentration on hot-carrier-effect in deep-sub-micron grooved gate PMOSFETs. International Conference on Solid-State and Integrated Circuit Technology (ICSICT).DOI
2116. 马佩军，郝跃，刘红侠（2001）. 针孔缺陷对集成电路功能成品率影响分析与仿真. Journal of Semiconductors.
2117. 任红霞，郝跃，许冬岗（2001）. 深亚微米槽栅NMOSFET结构参数对其抗热载流子特性的影响. 《电子学报》.
2118. 赵天绪，马佩军，郝跃，焦永昌（2001）. 基于子单元级冗余的VLSI成品率优化设计方法. 《西安电子科技大学学报》.
2119. 赵天绪，郝跃，陈太峰，马佩军（2001）. 基于离散模型的IC可靠性与成品率关系. 《电子学报》.
2120. 刘红侠，郝跃，黄涛，方建平（2001）. 衬底热电子增强的薄SiO2层击穿特性研究. 《电子学报》.
2121. 冯倩，郝跃（2001）. 新型绝缘体上硅技术的发展与展望. 《西安电子科技大学学报》.
2122. 赵天绪，郝跃（2001）. 集成电路局部缺陷模型及其相关的功能成品率分析. 《微电子学》.
2123. 刘红侠，郝跃，孙志（2001）. 动态应力下MOS器件热载流子效应研究. 《固体电子学研究与进展》.
2124. 马佩军，郝跃，寇芸（2001）. 一种改进的VLSI关键面积计算模型和方法. Journal of Semiconductors.
2125. 王俊平，郝跃，铁满霞（2001）. 基于数学形态学的集成电路真实缺陷图像滤波. 《西安电子科技大学学报》.
2126. 任红霞，郝跃（2001）. 槽栅PMOSFET沟道杂质浓度对其特性影响. 《西安电子科技大学学报》.
2127. 任红霞，郝跃（2001）. 衬底掺杂浓度对深亚微米槽栅PMOSFET特性影响. 《西安电子科技大学学报》.
2128. 赵天绪，郝跃，周水生（2001）. VLSI冗余单元最优分配的遗传算法求解. 《电子与信息学报》.
2129. Hongxia Ren, Yue Hao (2001). Study on the degradation induced by donor interface state in deep-sub-micron grooved-gate P-channel MOSFET’s. Microelectronics Reliability.DOI
2130. Hongxia Ren, Yue Hao, Lei Xue (2001). Characteristics of Deep Submicron Grooved-Gate P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors. Japanese Journal of Applied Physics.DOI
2131. Hongxia Ren, Yue Hao (2001). The influence of doping density on short channel effects immunity in deep sub-micron grooved-gate PMOSFETs. Microelectronics Journal.DOI
2132. Yusheng Tang, Yue Hao, Jiangang Zhu, Jincheng Zhang (2001). Degradation model of the electron gate current in PMOSFET. International Conference on Solid-State and Integrated Circuit Technology (ICSICT).DOI
2133. 任红霞，郝跃（2000）. 槽栅MOS器件的研究与进展. 《微电子学》.
2134. 赵天绪，郝跃，朱建纲（2000）. 一种有效的电路容错结构及其成品率分析. 《电子学报》.
2135. 郝跃，马佩军，张卫东，赵天绪（2000）. 功能成品率估算的缺陷特征参数提取方法. 《电子学报》.
2136. 王剑屏，郝跃，彭军（2000）. SiC单片集成电路工艺技术. 《西安电子科技大学学报》.
2137. 刘红侠，郝跃，朱秉升（2000）. LPCVD制备SIPOS薄膜淀积工艺的研究. 《西安电子科技大学学报》.
2138. 王俊平，郝跃，任春丽，铁满霞（2000）. IC真实缺陷图像的分色. 《西安电子科技大学学报》.
2139. 赵天绪，赵金锁，贺建萍，郝跃（2000）. 集成电路参数成品率的研究. 《宝鸡文理学院学报(自然科学版)》.
2140. 任红霞，郝跃（2000）. 新型槽栅PMOSFET热载流子退化机理与抗热载流子效应研究. 《物理学报》.
2141. Jianping Wang, Yue Hao, Jun Peng (2000). Heteroepitaxial film of silicon carbide grown on sapphire with a nitride buffer layer. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE.DOI
2142. 郝跃，林锐，马佩军（1999）. VLSI成品率预测与仿真. 《电子学报》.
2143. 汤玉生，郝跃（1999）. MOS沟道和衬底电流的二维分布理论建模. 《电子学报》.
2144. 张卫东，郝跃，汤玉生（1999）. 深亚微米MOSFET热载流子退化机理及建模的研究进展. 《电子学报》.
2145. 姜晓鸿，赵天绪，郝跃，徐国华（1999）. 一种IC缺陷轮廓建模的新方法. 《电子学报》.
2146. 赵天绪，郝跃，李宏涛，王江爱（1999）. VLSI容错结构设计及其可靠性模型研究. 《现代电子技术》.
2147. 赵天绪，郝跃，许冬岗（1999）. VLSI 3-维容错结构及其成品率分析. Journal of Semiconductors.
2148. 刘红侠，郝跃（1999）. 薄栅介质的电子俘获击穿机理及物理模型. 《西安电子科技大学学报》.
2149. 赵天绪，郝跃，周涤非，许冬岗（1999）. d-叉树k-FT结构的可靠性分析及冗余单元的分配. 《西安电子科技大学学报》.
2150. 郝跃，赵天绪，易婷（1999）. VLSI容错设计研究进展(1)——缺陷的分布模型及容错设计的关键技术. 《固体电子学研究与进展》.
2151. 郝跃，赵天绪，易婷（1999）. VLSI容错设计研究进展(2)——功能成品率与可靠性的研究. 《固体电子学研究与进展》.
2152. 汤玉生，郝跃（1999）. MOSFET栅电流分布的理论建模. 《电子学报》.
2153. 赵天绪，何广平，姜晓鸿，郝跃（1999）. 集成电路功能成品率的研究. 《宝鸡文理学院学报(自然科学版)》.
2154. 郝跃，赵天绪，马佩军，周涤非（1999）. 器件模型参数的相关性分析与建模. 《电子学报》.
2155. 刘红侠，郝跃（1998）. 热生长超薄栅氧化层的空穴击穿机理与碰撞电离模型. 《西安电子科技大学学报》.
2156. 刘红侠，郝跃（1998）. 超薄栅氧化层的击穿机理与模型的研究进展. 《固体电子学研究与进展》.
2157. 张卫东，汤玉生，郝跃（1998）. 动态应力下MOSFET的热载流子效应与可靠性. 《固体电子学研究与进展》.
2158. 朱建纲，张卫东，郝跃（1998）. MOS器件中热载流子效应有关电场的计算方法. 《西安电子科技大学学报》.
2159. Xiaohong Jiang, Yue Hao, Guohua Xu (1998). Equivalent circular defect model of real defect outlines in the IC manufacturing process. IEEE Transactions on Semiconductor Manufacturing.DOI
2160. 周浩华，姚立真，郝跃（1997）. 深亚微米MOSFET模型研究进展. 《电子科技》.
2161. 张卫东，汤玉生，郝跃（1997）. MOS器件热载流子效应的测试方法. 《西安电子科技大学学报》.
2162. 姜晓鸿，郝跃，周涤非，许冬岗（1997）. IC丢失物缺陷粒径的表征及其轮廓的分形特征. 《西安电子科技大学学报》.
2163. 刘志镜，薛志军，郝跃（1996）. 电路参数的多目标优化设计. 《西安电子科技大学学报》.
2164. 郝跃（1994）. 序列二次逼近下的集成电路统计最优化方法. 《电子学报》.
2165. 郝跃（1993）. DCTT统计最优化的进一步策略和方法. 《电子学报》.
2166. 郝跃（1993）. IC可制造性设计基础与统计最优化方法. 《西安电子科技大学学报》.
2167. 刘志镜，郝跃（1992）. 电路成品率极大化的改进重心游移法. 《西安电子科技大学学报》.
2168. 郝跃（1991）. 双极模拟集成电路的参数统计性分析. 《电子与信息学报》.
2169. 郝跃，贾新章，姚立真（1991）. 含成品率极大逼近的集成电路多目标最优化方法. 《西安电子科技大学学报》.
2170. 郝跃（1990）. 集成电路多目标优化设计的一般性问题及其求解方法. 《固体电子学研究与进展》.
2171. 郝跃，贾新章（1990）. 集成电路多目标统计优化与效益折衷. 《西安电子科技大学学报》.
2172. 郝跃，贾新章（1989）. 器件参数全域优化的填充函数方法. 《固体电子学研究与进展》.
2173. 郝跃，贾新章（1989）. 一种芯片阶段获取集成双极晶体管交流参数的方法. 《电子学报》.
2174. 郝跃，贾新章（1988）. 集成器件参数优化中的伴随网络方法. 《西安电子科技大学学报》.
2175. 郝跃，贾新章（1988）. MOSFET模型参数的全域优化提取. 《西安电子科技大学学报》.
2176. 郝跃，孙青，贾新章（1988）. 集成双极型晶体管模型参数的总体优化提取. 《电子学报》.
2177. 郝跃，姚立真（1988）. 低频低噪声集成电路实现途径及方法. 《半导体技术》.
2178. 郝跃，贾新章，李婉莹，伍学扬（1987）. PEAS模型参数提取系统在双极数字集成电路分析中的应用. 《微处理机》.
2179. 贾新章，郝跃，张虹（1987）. 分析光刻套刻误差测试数据的模型——兼谈 Perloff 公式的适用条件. 《西安电子科技大学学报》.
2180. 朱兆宗，彭军，张鹤鸣，郝跃（1986）. 非晶硅(a-Si)复合钝化层对改善低频噪声的作用. 《西安电子科技大学学报》.
2181. 郝跃，孙青，贾新章（1986）. 集成双极晶体管模型参数的总体优化提取——非线性函数与梯度来解. 《西安电子科技大学学报》.
2182. 贾新章，郝跃，陈明辉（1985）. 集成电路中金属-半导体接触电阻的测试. 《西安电子科技大学学报》.