江安全｜复旦大学｜学者主页

2026

基于铁电器件的存内计算与神经形态应用的研究进展（英文）

王兴龙，松见康平，宁中锋，张文笛，江安全

Science China Materials

2026

Imprint Effect on Polarization Fatigue in Hf 0.5 Zr 0.5 O 2 Thin-Film Capacitors

Wen Di Zhang, Xianyu Hu, Xing Long Wang, Anquan Jiang

IEEE Transactions on Electron Devices

DOI

2025

高密度铁电畴壁存储器的研究进展

松见康平，王兴龙，胡笛，江安全

《硅酸盐学报》

DOI

2025

Ultrahigh dielectric permittivity in Hf0.5Zr0.5O2 thin-film capacitors

Wen Di Zhang, Zhitang Song, S. Tang, Jin Chen Wei, Yan Cheng, Bing Li, Shiyou Chen, Zibin Chen, Anquan Jiang

Nature Communications

DOI

2025

Experimental discrimination of domain switching behaviors within interfacial and bulk layers in the LiNbO3 domain-wall memory

Wen Di Zhang, Anquan Jiang

Journal of Applied Physics

DOI

2025

CMOS‐Compatible LiNbO 3 Domain‐Wall Entropy Engine for Ultrafast True Random Number Generation

Haiyue Tang, Zilong Wang, Xinglong Wang, Xianyu Hu, Di Hu, Qianwei Huang, Wen Di Zhang, Anquan Jiang

Advanced Materials

DOI

2025

Ferroelectric materials, devices, and chips technologies for advanced computing and memory applications: development and challenges

Xiao Yu, Ni Zhong, Yan Cheng, Tianjiao Xin, Qing Luo, Tiancheng Gong, Jiezhi Chen, Jixuan Wu, Ran Cheng, Zhiyuan Fu, Kechao Tang, Jin Luo, Tianling Ren, Fei Xue, Lin Chen, Tianyu Wang, Xueqing Li, Xiuyan Li, Ping Wang, Xinqiang Wang, Jie Sun, Anquan Jiang, Peiyuan Du, Bing Chen, Chengji Jin, Jiajia Chen, Haoji Qian, Wei Mao, Siying Zheng, Huan Liu, Huizhong Xu, Can Liu, Zhihao Shen, Xiaoxi Li, Bochang Li, Zheng‐Dong Luo, Jiuren Zhou, Yan Liu, Yue Hao, Genquan Han

Science China Information Sciences

DOI

2024

Ultralow electric-field poling of LiNbO3 single-crystal devices

Di Hu, Xing Long Wang, Xianyu Hu, Yi Ming Li, Jie Sun, Anquan Jiang

Applied Physics Letters

DOI

2024

Multi‐Functional Ferroelectric Domain Wall Nanodevices for In‐Memory Computing and Light Sensing

Boyang Zhang, Zhenhai Li, Wendi Zhang, Jiyuan Zhu, Bowen Shen, Haiyue Tang, Lin Chen, Jie Sun, Anquan Jiang

Advanced Functional Materials

DOI

2024

Ferroelectric Domain Wall Delayer and Low-Dropout Regulator

Yiming Li, Di Hu, Jie Sun, Wendi Zhang, Anquan Jiang

ACS Applied Materials & Interfaces

DOI

2024

Multilevel Ferroelectric Domain Wall Memory for Neuromorphic Computing

Bo Shen, Haoran Sun, Xianyu Hu, Jie Sun, Jun Feng Jiang, Zengxing Zhang, Anquan Jiang

Advanced Functional Materials

DOI

2024

Adjustable onset voltages of embedded LiNbO3 domain-wall selectors for large-scale memory integration

Hao Chen Fan, Bo Shen, Wen Di Zhang, Anquan Jiang

Applied Physics Letters

DOI

2024

A ferroelectric fin diode for robust non-volatile memory

Guangdi Feng, Qiuxiang Zhu, Xuefeng Liu, Luqiu Chen, Xiaoming Zhao, Jianquan Liu, Shaobing Xiong, Kexiang Shan, Zhenzhong Yang, Qinye Bao, Fangyu Yue, Hui Peng, Rong Tan Huang, Xiaodong Tang, Jie Jiang, Wei Tang, Xiaojun Guo, Jianlu Wang, Anquan Jiang, Brahim Dkhil, Bobo Tian, Junhao Chu, Chun‐Gang Duan

Nature Communications

DOI

2024

Improvement of Polarization Retention at Low and High Temperatures for Hf₀.₅Zr₀.₅O₂ Thin-Film Capacitors

Wen Di Zhang, Anquan Jiang

IEEE Electron Device Letters

DOI

2024

The Operation of Lithium Niobate Ferroelectric Domain Wall Memory at 673 K

Haochen Fan, Bo Shen, Anquan Jiang

IEEE Electron Device Letters

DOI

2023

Ferroelectric domain wall memory

李一鸣，孙杰，江安全

Chinese Physics B

2023

A Ferroelectric Domain-Wall Transistor

欧阳俊，孙杰，李一鸣，江安全

Chinese Physics Letters

2023

Size-Scaling Effect on Domain Switching Time and Coercive Field of TiN/Hf0.5Zr0.5O2/TiN Thin-Film Capacitors

Wen Di Zhang, Anquan Jiang

IEEE Transactions on Electron Devices

DOI

2023

Hybrid Dry and Wet Etching of LiNbO3 Domain-Wall Memory Devices with 90° Etching Angles and Excellent Electrical Properties

Bo Shen, Xiaojun Tan, Chao Wang, Haochen Fan, Di Hu, Jie Sun, Jun Feng Jiang, Anquan Jiang

ACS Applied Materials & Interfaces

DOI

2023

High-Power LiNbO3 Domain-Wall Nanodevices

Jie Sun, Yiming Li, Boyang Zhang, Anquan Jiang

ACS Applied Materials & Interfaces

DOI

2023

Cryogenic Ferroelectric LiNbO3 Domain Wall Memory

Di Hu, Bo Shen, Jie Sun, Yi Ming Li, Anquan Jiang

IEEE Electron Device Letters

DOI

2023

Advanced Etching Techniques of LiNbO3 Nanodevices

Bo Shen, Di Hu, Cuihua Dai, Xiaoyang Yu, Xiaojun Tan, Jie Sun, Jun Feng Jiang, Anquan Jiang

Nanomaterials

DOI

2022

Polarization retention dependence of imprint time within LiNbO3 single-crystal domain wall devices

Wen Di Zhang, Xiao Zhuang, Jun Feng Jiang, Anquan Jiang

Journal of Applied Physics

DOI

2022

Nanometer-sized etching of lithium niobate domain wall devices

Menghan Ao, Yiming Li, Qilan Zhong, Yan Cheng, Anquan Jiang

Ceramics International

DOI

2022

In‐Memory Computing of Multilevel Ferroelectric Domain Wall Diodes at LiNbO3 Interfaces

Jie Sun, Yiming Li, Yang-Jun Ou, Qianwei Huang, Xiaozhou Liao, Zibin Chen, Xiaojie Chai, Xiao Zhuang, Wendi Zhang, Chao Wang, Jun Feng Jiang, Anquan Jiang

Advanced Functional Materials

DOI

2022

The technique to symmetrize domain switching hysteresis loops in LiNbO3 domain-wall nanodevices with improved polarization retention

Xiao Zhuang, Chao Wang, Anquan Jiang

Applied Physics Letters

DOI

2022

Mechanical strain modulation of domain wall currents across LiNbO3 nanosensors

Xiaobing Hu, Sizheng Zheng, Wendi Zhang, Wenjie Zhang, Jie Wang, Jun Feng Jiang, Anquan Jiang

Ceramics International

DOI

2022

Size-driven transition of domain switching kinetics in LiNbO3 domain-wall memory

Wen Di Zhang, Jun Feng Jiang, Anquan Jiang

Journal of Applied Physics

DOI

2021

Erasable Ferroelectric Domain Wall Diodes

张伟，汪超，连建伟，江钧，江安全

Chinese Physics Letters

2021

In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO3 Thin Films

Menghan Ao, Si Zheng Zheng, Qilan Zhong, Wen Di Zhang, Xu Hou, Xiao Jie Chai, Chao Wang, Hao Chen Fan, Jianwei Lian, Yan Cheng, Jie Wang, Jun Feng Jiang, Anquan Jiang

ACS Applied Materials & Interfaces

DOI

2021

Large domain-wall currents in epitaxial Au/BiFeO3/SrRuO3 thin-film capacitors with modulated oxygen vacancy and wall densities

Qiqi Peng, Xu Jiang, Yifan Chen, Wei Zhang, Jun Feng Jiang, Anquan Jiang

Ceramics International

DOI

2021

Size-Controlled Polarization Retention and Wall Current in Lithium Niobate Single-Crystal Memories

Xiaobing Hu, Xu Hou, Yan Zhang, Xiaojie Chai, Jianwei Lian, Chao Wang, Jie Wang, Jun Feng Jiang, Anquan Jiang

ACS Applied Materials & Interfaces

DOI

2021

Analog ferroelectric domain-wall memories and synaptic devices integrated with Si substrates

Chao Wang, Tianyu Wang, Wendi Zhang, Jun Feng Jiang, Lin Chen, Anquan Jiang

Nano Research

DOI

2021

Controlled domain wall directions within nanodevices integrated on the surface of LiNbO3 single crystals

Jun Feng Jiang, Jie Sun, Chao Wang, Anquan Jiang

IEEE International Conference on ASIC (ASICON)

DOI

2021

Sub 20 nm‐Node LiNbO3 Domain‐Wall Memory

Jianwei Lian, Xiaojie Chai, Chao Wang, Xiaobing Hu, Jun Feng Jiang, Anquan Jiang

Advanced Materials Technologies

DOI

2021

Conductions through head-to-head and tail-to-tail domain walls in LiNbO3 nanodevices

Xiaojie Chai, Jianwei Lian, Chao Wang, Xiaobing Hu, Jie Sun, Jun Feng Jiang, Anquan Jiang

Journal of Alloys and Compounds

DOI

2021

Improved polarization retention in LiNbO3 single-crystal memory cells with enhanced etching angles

Yifan Chen, Xiao Zhuang, Xiaojie Chai, Xu Jiang, Jie Sun, Jun Feng Jiang, Anquan Jiang

Journal of Materials Science

DOI

2021

Surface‐Bound Domain Penetration and Large Wall Current

Jun Feng Jiang, Chao Wang, Xiaojie Chai, Qinghua Zhang, Xu Hou, Fanqi Meng, Lin Gu, Jie Wang, Anquan Jiang

Advanced Electronic Materials

DOI

2021

Engineering of Electron Confinement through Defect‐Based Localized Polarization on SrTiO3 Surface

Junyan Chen, Wei Liu, Tobias Eul, Mingjing Chen, Xiaoyong Hu, Shufang Wang, Anquan Jiang, Hong Yang, Martin Aeschlimann, Qihuang Gong

Advanced Electronic Materials

DOI

2020

Large domain-wall current in BiFeO3 epitaxial thin films

Xu Jiang, Jie Sun, Xiaojie Chai, Yifan Chen, Wei Zhang, Jun Feng Jiang, Anquan Jiang

Ceramics International

DOI

2020

Energy-Efficient Ferroelectric Domain Wall Memory with Controlled Domain Switching Dynamics

Chao Wang, Jun Feng Jiang, Xiaojie Chai, Jianwei Lian, Xiaobing Hu, Anquan Jiang

ACS Applied Materials & Interfaces

DOI

2020

Nonvolatile ferroelectric field-effect transistors

Xiaojie Chai, Jun Feng Jiang, Qinghua Zhang, Xu Hou, Fanqi Meng, Jie Wang, Lin Gu, David Wei Zhang, Anquan Jiang

Nature Communications

DOI

2020

High temperature ferroelectric domain wall memory

Jun Feng Jiang, Xiaojie Chai, Chao Wang, Anquan Jiang

Journal of Alloys and Compounds

DOI

2020

Low-voltage operation of high-density ferroelectric domain wall memory

Anquan Jiang, Jun Feng Jiang, Chao Wang

IEEE International Conference on Solid-State & Integrated Circuit Technology (ICSICT)

DOI

2020

Ferroelectric domain wall memory with embedded selector realized in LiNbO3 single crystals integrated on Si wafers

Anquan Jiang, Wen Ping Geng, Peng Fei Lv, Jiawang Hong, Jun Feng Jiang, Chao Wang, Xiao Jie Chai, Jianwei Lian, Yan Zhang, Rong Tan Huang, David Wei Zhang, James Floyd Scott, Cheol Seong Hwang

Nature Materials

DOI

2019

新型低维铁电材料及其器件

蒋旭，张焱，江安全

《湘潭大学学报(自然科学版)》

DOI

2019

Effects of atmosphere, metal films, temperatures and holding time on the surface topography and electrical conductivity of LiNbO3 single crystals

Jianwei Lian, Jiajia Tao, Xiaojie Chai, Yan Zhang, Anquan Jiang

Ceramics International

DOI

2019

Charge-Transfer-Induced Interfacial Exchange Coupling at the Co / Bi Fe O 3 Interface

Jianwei Meng, Kai Chen, Emin Mijit, Dongfang Chen, Fadi Choueikani, Zhiqiang Zou, Lingling Wang, Gang Mu, Wenping Geng, Qingyu Kong, Anquan Jiang, Xi‐Jing Ning, Tsu‐Chien Weng

Physical Review Applied

DOI

2019

Improved Ferroelectric Performance of Mg-Doped LiNbO3 Films by an Ideal Atomic Layer Deposited Al2O3 Tunnel Switch Layer

Yan Zhang, Qing Hua Ren, Xiao Jie Chai, Jun Feng Jiang, Jianguo Yang, Anquan Jiang

Nanoscale Research Letters

DOI

2019

The Observation of Domain‐Wall Current Transients Along with Charge Injection at Elevated Temperatures

Dongfang Chen, Zongquan Gu, Donghui Zhao, Zilong Bai, Anquan Jiang

Advanced Electronic Materials

DOI

2019

Next-generation ferroelectric domain-wall memories: principle and architecture

Anquan Jiang, Yan Zhang

NPG Asia Materials

DOI

2018

Thickness Effect on (La0.26Bi0.74)2Ti4O11Thin-Film Composition and Electrical Properties

郭会珍，江安全

Chinese Physics Letters

2018

Strain induced enhancement of erasable domain wall current in epitaxial BiFeO3 thin films

Dongfang Chen, Zilong Bai, Yan Zhang, Anquan Jiang

Journal of Applied Physics

DOI

2018

Low-frequency charge trapping and bistable domain switching in Mg-doped LiNbO3 single crystal films

Yan Zhang, Anquan Jiang

Journal of Applied Physics

DOI

2018

Hierarchical Domain Structure and Extremely Large Wall Current in Epitaxial BiFeO3 Thin Films

Zi Long Bai, Xiao Xing Cheng, Dong Fang Chen, David Wei Zhang, Long‐Qing Chen, James Floyd Scott, Cheol Seong Hwang, Anquan Jiang

Advanced Functional Materials

DOI

2018

A current transient method for trap analysis in BiFeO3 thin films

Hui Zhu, Ying Yang, Xiao Meng, Anquan Jiang, Zilong Bai, Xiang Zheng, Lei Jin, Chen Wang, Shiwei Feng

Applied Physics Letters

DOI

2018

Fatigue behavior of resistive switching in a BiFeO 3 thin film

Hui Zhu, Ying Yang, Anquan Jiang, Zilong Bai, Xiao Meng, Shiwei Feng

Japanese Journal of Applied Physics

DOI

2018

Stripe domains in epitaxial BiFeO3 thin films on (100) SrTiO3 substrates

Dongfang Chen, Donghui Zhao, Zilong Bai, Jianwei Meng, Xi‐Jing Ning, Anquan Jiang

Journal of Applied Physics

DOI

2017

Improved Polarization Retention of BiFeO3Thin Films Using GdScO3（110） Substrates

许帅骑，张岩，郭慧珍，耿文平，白子龙，江安全

Chinese Physics Letters

2017

Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories

Jun Feng Jiang, Zi Long Bai, Zhi Hui Chen, Long He, David Wei Zhang, Qing Hua Zhang, Jin An Shi, Min Hyuk Park, James F. Scott, Cheol Seong Hwang, Anquan Jiang

Nature Materials

DOI

2017

The abnormal photovoltaic effect in BiFeO3 thin films modulated by bipolar domain orientations and oxygen-vacancy migration

Zilong Bai, Wenping Geng, Yan Zhang, Shuaiqi Xu, Huizhen Guo, Anquan Jiang

Applied Physics A

DOI

2017

The Influence of Conductive Nanodomain Walls on the Photovoltaic Effect of BiFeO3 Thin Films

Zilong Bai, Yan Zhang, Huizhen Guo, Anquan Jiang

Crystals

DOI

2016

Nanosecond Characterization of Regional Domain Imprint from Fast Domain Switching Currents in Pb（Zr,Ti）O3Thin Films

江钧，江安全

Chinese Physics Letters

2016

Effect of poling process on resistive switching in Au/BiFeO3/SrRuO3 structures

Hui Zhu, Yingqiao Zhang, Anquan Jiang, Zilong Bai, Shiwei Feng, Pengfei Wang, Xiao Meng, Qiong Qi

Applied Physics Letters

DOI

2016

High-desity nonvolatile ferroelectric resisitive memory

Anquan Jiang, Jun Feng Jiang, Ting Ao Tang

IEEE International Conference on Solid-State and Integrated Circuit Technology

DOI

2016

Buckling Effect Induced Abnormal Out of Plane Domain Stripe in BiFeO3Single-Crystalline Thin Film Investigated by Piezoresponse Force Microscopy

Long He, Jianwei Meng, Boyuan Zhao, Jun Feng Jiang, Wenping Geng, Anquan Jiang

Ferroelectrics

DOI

2016

Alternative interpretations for decreasing voltage with increasing charge in ferroelectric capacitors

Seul Ji Song, Yu Jin Kim, Min Hyuk Park, Young H. Lee, Han‐Joon Kim, Taehwan Moon, Keum Do Kim, Jung‐Hae Choi, Zhihui Chen, Anquan Jiang, Cheol Seong Hwang

Scientific Reports

DOI

2015

Voltage linearity modulation and polarity dependent conduction in metal-insulator-metal capacitors with atomic-layer-deposited Al2O3/ZrO2/SiO2 nano-stacks

Bao Hu Zhu, Wenjun Liu, Lei Wei, David Wei Zhang, Anquan Jiang, Shi‐Jin Ding

Journal of Applied Physics

DOI

2015

Ferroelectric polarization and defect-dipole switching in an epitaxial (111) BiFeO3 thin film

Boyuan Zhao, Zhihui Chen, Jianwei Meng, Hong-Liang Lü, David Wei Zhang, Anquan Jiang

Journal of Applied Physics

DOI

2015

Investigation of the growth mechanism of SrRuO3thin films fabricated by pulsed laser deposition

Jianwei Meng, Zhihui Chen, Anquan Jiang

Japanese Journal of Applied Physics

DOI

2015

Polarization fatigue in antiferroelectric (Pb,La)(Zr,Ti)O3 thin films: The role of the effective strength of driving waveform

Wenping Geng, Yang Liu, Xiaojie Lou, Fuping Zhang, Qida Liu, Brahim Dkhil, Ming Zhang, Xiaobing Ren, Hongliang He, Anquan Jiang

Ceramics International

DOI

2015

The effect of in situ annealing oxygen pressure on the ferroelectric resistive switching characteristic

Boyuan Zhao, Jun Feng Jiang, Long He, Jianwei Meng, Wenping Geng, Zhihui Chen, Anquan Jiang

Ceramics International

DOI

2015

Accelerated domain switching speed in single-crystal LiNbO3 thin films

Jun Feng Jiang, Xiangjian Meng, Deqiang Geng, Anquan Jiang

Journal of Applied Physics

DOI

2015

Domain switching kinetics in ferroelectric-resistive BiFeO3 thin film memories

Jianwei Meng, Jun Feng Jiang, Wenping Geng, Zhihui Chen, Wei Zhang, Anquan Jiang

Japanese Journal of Applied Physics

DOI

2015

Photodetectors: Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics (Adv. Mater. 42/2015)

Xudong Wang, Peng Wang, Jianlu Wang, Weida Hu, Xiaohao Zhou, Nan Guo, Hai Huang, Shuo Sun, Hong Shen, Tie Lin, Minghua Tang, Lei Liao, Anquan Jiang, Jinglan Sun, Xiangjian Meng, Xiaoshuang Chen, Wei Lu, Junhao Chu

Advanced Materials

DOI

2015

Giant Dielectric Permittivity in Ferroelectric Thin Films: Domain Wall Ping Pong

Anquan Jiang, Xiang Meng, David Wei Zhang, Min Hyuk Park, Sijung Yoo, Yu Jin Kim, James Floyd Scott, Cheol Seong Hwang

Scientific Reports

DOI

2015

Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics

Advanced Materials

DOI

2015

Antiferroelectric Thin Films: Giant Negative Electrocaloric Effect in Antiferroelectric La‐Doped Pb(ZrTi)O3 Thin Films Near Room Temperature (Adv. Mater. 20/2015)

Wenping Geng, Yang Liu, Xiangjian Meng, L. Bellaïche, James Floyd Scott, Brahim Dkhil, Anquan Jiang

Advanced Materials

DOI

2015

Giant Negative Electrocaloric Effect in Antiferroelectric La‐Doped Pb(ZrTi)O3 Thin Films Near Room Temperature

Wenping Geng, Yang Liu, Xiangjian Meng, L. Bellaïche, James Floyd Scott, Brahim Dkhil, Anquan Jiang

Advanced Materials

DOI

2014

Enhanced dielectric nonlinearity with controlled domain nucleation in ferroelectric thin films

Anquan Jiang, Ting-Ao Tang

IEEE International Conference on Solid-State and Integrated Circuit Technology

DOI

2013

Estimation of film-electrode contact resistance and domain switching time from ferroelectric polarization-voltage hysteresis loops

Anquan Jiang, D.W. Zhang

Thin Solid Films

DOI

2013

The creep process of the domain switching in poly(vinylidene fluoride-trifluoroethylene) ferroelectric thin films

Bobo Tian, Z. H. Chen, Anquan Jiang, Xiaolin Zhao, B. L. Liu, Junling Wang, Li Han, Ш. Сун, J. L. Sun, Xiangjian Meng, Junhao Chu

Applied Physics Letters

DOI

2013

Nonlinear antiferroelectric-like capacitance-voltage curves in ferroelectric BiFeO3 thin films

Anquan Jiang, David Wei Zhang, T. A. Tang

Journal of Applied Physics

DOI

2013

The conduction mechanism of large on/off ferroelectric diode currents in epitaxial (111) BiFeO3 thin film

Zhihui Chen, Long He, Fan Zhang, Jun Feng Jiang, Jianwei Meng, Boyuan Zhao, Anquan Jiang

Journal of Applied Physics

DOI

2013

Preparation and characterization of Bi-doped LuFeO3 thin films grown on LaNiO3 substrate

Liping Zhu, Hongmei Deng, Jian Liu, Lin Sun, Pingxiong Yang, Anquan Jiang, Junhao Chu

Journal of Crystal Growth

DOI

2013

Piezoelectric force microscopy study of local bipolar diode current dependence of preferential domain orientation in BiFeO3 thin films with different thicknesses

Long He, Zhihui Chen, Anquan Jiang

IEEE International Conference on ASIC (ASICON)

DOI

2013

Structural characterization and optical properties of Sol-gel-derived polycrystalline Pb(Zr0.35Ti0.65)O3 thin films

Fan Zhang, Rong Jun Zhang, Zi Yi Wang, Yu-Xiang Zheng, Song You Wang, Hai Bin Zhao, Liang‐Yao Chen, Xiao Bin Liu, Anquan Jiang

Journal of the Korean Physical Society

DOI

2012

The improved polarization retention through high-field charge injection in highly strained BiFeO3 thin films with preferred domain orientations

X. B. Liu, N. F. Ding, Anquan Jiang, Pingxiong Yang

Applied Physics Letters

DOI

2012

Subpicosecond Domain Switching in Discrete Regions of Pb(Zr0.35Ti0.65)O3 Thick Films

Anquan Jiang, Zhi Hui Chen, Wenyuan Hui, Dongping Wu, James F. Scott

Advanced Functional Materials

DOI

2012

Fabrication and piezoresponse of electrospun ultra-fine Pb(Zr0.3, Ti0.7)O3 nanofibers

Meng Fan, Wenyuan Hui, Zhidong Li, Zhenkui Shen, Hui Li, Anquan Jiang, Yifang Chen, Ran Liu

Microelectronic Engineering

DOI

2012

Mechanism of high temperature hydrogen reduced polarization degradation in Pb(Zr1−xTix)O3 ferroelectric thin film capacitors

Wenyuan Hui, Zhihui Chen, Xiaobing Liu, Anquan Jiang

physica status solidi (a)

DOI

2012

Local On/Off Currents in BiFeO3 Thin Films Modulated by Bipolar Polarization Orientations

Anquan Jiang, Mengze Chen, Hao Yu, T. A. Tang

Integrated ferroelectrics

DOI

2011

Sub‐Picosecond Processes of Ferroelectric Domain Switching from Field and Temperature Experiments

Anquan Jiang, Hyun Ju Lee, Cheol Seong Hwang, James F. Scott

Advanced Functional Materials

DOI

2011

Polarization switching and discharging behaviors in serially connected ferroelectric Pt/Pb(Zr,Ti)O3/Pt and paraelectric capacitors

Hyun Ju Lee, Min Hyuk Park, Gun Hwan Kim, Jun Yeong Seok, Yu Jin Kim, Cheol Seong Hwang, Anquan Jiang

Journal of Applied Physics

DOI

2011

Nano-embossing technology on ferroelectric thin film Pb(Zr0.3,Ti0.7)O3 for multi-bit storage application

Zhenkui Shen, Zhihui Chen, Qian Lu, Zhi‐Jun Qiu, Anquan Jiang, Xin-Ping Qu, Yifang Chen, Ran Liu

Nanoscale Research Letters

DOI

2011

The complex nanostructure of P(VDF-TrFE) made by dual step hot-embossing

Juanjuan Wen, Zhenkui Shen, Jiang-Rong Fang, Bing-Rui Lu, Zhi‐Jun Qiu, Anquan Jiang, Ran Liu, Yifang Chen

DOI

2011

A Resistive Memory in Semiconducting BiFeO 3 Thin‐Film Capacitors

Anquan Jiang, Can Wang, Kui Juan Jin, Xiao Bing Liu, James Floyd Scott, Cheol Seong Hwang, Ting Ao Tang, Hui Lu, Guo Zhen Yang

Advanced Materials

DOI

2011

Studies on Al-doped ZnO thin-film transistors with Pb(Zr0.3Ti0.7)O3 gate insulator

Z. H. Chen, X. B. Liu, Mengze Chen, Hao Yu, Anquan Jiang

Integrated ferroelectrics

DOI

2010

Measurement of Nonlinear Current–Voltage Dependence of Interfacial Passive Layers for Ferroelectric Thin Films

Zhi Hui Chen, Zhen Kui Shen, Anquan Jiang

Japanese Journal of Applied Physics

DOI

2010

Study of Ferroelectic Properties in Ferroelectric/High-k Dielectric Bilayers

Zhijun Ma, Anquan Jiang

Ferroelectrics

DOI

2010

Effects of Pb Excess and Temperature on Polarization Fatigue in Sol-Gel Derived Pb(Zr0.3Ti0.7)O3Thin Films

Z. H. Chen, Anquan Jiang

Ferroelectrics

DOI

2010

Charge Injection Controlled Capacitance Degradation in Ferroelectric Thin Films

Anquan Jiang, T. A. Tang

Ferroelectrics

DOI

2010

Ferroelectric Phase Stabilization within Antiferroelectric/Dielectric Stacking Layers

X. D. Weng, Anquan Jiang

Ferroelectrics

DOI

2010

THE EFFECTS OF PB EXCESS AND FREQUENCY ON POLARIZATION-VOLTAGE HYSTERESIS LOOPS IN Pb(Zr0.3Ti0.7)O3 THIN FILMS

Z. H. Chen, Anquan Jiang, T. A. Tang

Integrated ferroelectrics

DOI

2010

Influence of nano-embossing on properties of Pb(Zr0.3,Ti0.7)O3 ferroelectric thin film

Zhenkui Shen, Zhihui Chen, Jiang-Rong Fang, Bing-Rui Lu, Zhi‐Jun Qiu, Anquan Jiang, Yifang Chen, Xin-Ping Qu, Ran Liu

DOI

2009

Evidence of nanosecond-scale charge injection during domain switching from fast imprint measurements in Pb(Zr,Ti)O3 thin films at low temperatures

Anquan Jiang, Hao Yu, T. A. Tang

Applied Physics Letters

DOI

2009

An analysis of imprinted hysteresis loops for a ferroelectric Pb(Zr,Ti)O3 thin film capacitor using the switching transient current measurements

Gun Hwan Kim, Hyun Ju Lee, Anquan Jiang, Min Hyuk Park, Cheol Seong Hwang

Journal of Applied Physics

DOI

2009

The Technique to Characterize Irreversible Domain Motion in Ferroelectric Thin Films in a Large Time Scale

Anquan Jiang

ECS Transactions

DOI

2009

The Technique to Characterize Reversible and Irreversible Domain Motions in Ferroelectric Thin Films in a Large Time Scale

Anquan Jiang

ECS Meeting Abstracts

DOI

2009

The Inlaid Al2O3 Tunnel Switch for Ultrathin Ferroelectric Films

Anquan Jiang, Hyun Ju Lee, Gun Hwan Kim, Cheol Seong Hwang

Advanced Materials

DOI

2008

Estimation of nonlinear interfacial capacitance from domain switching current of ferroelectric thin films

J.W. Fei, Anquan Jiang, T. A. Tang

Thin Solid Films

DOI

2008

Remanent polarization reduction with enhanced temperature in ferroelectric thin films

Anquan Jiang, T. A. Tang

Journal of Applied Physics

DOI

2008

Formulization of long-time domain switching around the coercive field from imprint measurements on ferroelectric thin films

Anquan Jiang, J.W. Fei, Yuanhai Lin, T. A. Tang

Journal of Applied Physics

DOI

2007

Nanosecond-range measurements of imprint effect for Pt∕IrO2∕Pb(Zr0.4Ti0.6)O3∕IrO2∕Pt thin-film capacitors

Anquan Jiang, Yuanhai Lin, T. A. Tang

Applied Physics Letters

DOI

2007

Charge injection and polarization fatigue in ferroelectric thin films

Anquan Jiang, Yuanhai Lin, T. A. Tang

Journal of Applied Physics

DOI

2007

The growth of interfacial passive layers under thermal passivation of integrated Pb(Zr,Ti)O3 thin films

Anquan Jiang, Yuanhai Lin, T. A. Tang

Journal of Applied Physics

DOI

2007

Unsaturated charge injection at high-frequency fatigue of Pt∕Pb(Zr,Ti)O3∕Pt thin-film capacitors

Anquan Jiang, Yuanhai Lin, T. A. Tang

Applied Physics Letters

DOI

2007

Interfacial-layer modulation of domain switching current in ferroelectric thin films

Anquan Jiang, Yuanhai Lin, T. A. Tang

Journal of Applied Physics

DOI

2007

Asymmetry of domain forward switching and multilevel relaxation times of domain backswitching in antiferroelectric Pb0.99Nb0.02(Zr0.84Sn0.12Ti0.04)0.98O3 thin films

Anquan Jiang, Yuanhai Lin, T. A. Tang, Qi Zhang

Applied Physics Letters

DOI

2007

Evaluation of interfacial-layer capacitance from fast polarization retention in ferroelectric thin films

Anquan Jiang, Yuanhai Lin, T. A. Tang

Journal of Applied Physics

DOI

2007

THE PHYSICAL CORRELATION OF DOMAIN-WALL DEPINNING AND POLARIZATION RELAXATION IN Bi3.53La0.47Ti3O12 THIN FILM

Yifan Zhang, Anquan Jiang, Y. J. ZHANG, Yuanhai Lin, T. A. Tang

Integrated ferroelectrics

DOI

2006

Coexisting depinning effect of domain walls during the fatigue in ferroelectric thin films

Anquan Jiang, Yuanhai Lin, T. A. Tang

Applied Physics Letters

DOI

2006

Interfacial depletion layers evidenced from dielectric relaxation current in ferroelectric thin films

Anquan Jiang, Yuanhai Lin, T. A. Tang

International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

DOI

精选作品

期刊论文

基于铁电器件的存内计算与神经形态应用的研究进展（英文）

Imprint Effect on Polarization Fatigue in Hf 0.5 Zr 0.5 O 2 Thin-Film Capacitors

高密度铁电畴壁存储器的研究进展

Ultrahigh dielectric permittivity in Hf0.5Zr0.5O2 thin-film capacitors

Experimental discrimination of domain switching behaviors within interfacial and bulk layers in the LiNbO3 domain-wall memory

CMOS‐Compatible LiNbO 3 Domain‐Wall Entropy Engine for Ultrafast True Random Number Generation

Ferroelectric materials, devices, and chips technologies for advanced computing and memory applications: development and challenges

Ultralow electric-field poling of LiNbO3 single-crystal devices

Multi‐Functional Ferroelectric Domain Wall Nanodevices for In‐Memory Computing and Light Sensing

Ferroelectric Domain Wall Delayer and Low-Dropout Regulator

Multilevel Ferroelectric Domain Wall Memory for Neuromorphic Computing

Adjustable onset voltages of embedded LiNbO3 domain-wall selectors for large-scale memory integration

A ferroelectric fin diode for robust non-volatile memory

Improvement of Polarization Retention at Low and High Temperatures for Hf₀.₅Zr₀.₅O₂ Thin-Film Capacitors

The Operation of Lithium Niobate Ferroelectric Domain Wall Memory at 673 K

Ferroelectric domain wall memory

A Ferroelectric Domain-Wall Transistor

Size-Scaling Effect on Domain Switching Time and Coercive Field of TiN/Hf0.5Zr0.5O2/TiN Thin-Film Capacitors

Hybrid Dry and Wet Etching of LiNbO3 Domain-Wall Memory Devices with 90° Etching Angles and Excellent Electrical Properties

High-Power LiNbO3 Domain-Wall Nanodevices

Cryogenic Ferroelectric LiNbO3 Domain Wall Memory

Advanced Etching Techniques of LiNbO3 Nanodevices

Polarization retention dependence of imprint time within LiNbO3 single-crystal domain wall devices

Nanometer-sized etching of lithium niobate domain wall devices

In‐Memory Computing of Multilevel Ferroelectric Domain Wall Diodes at LiNbO3 Interfaces

The technique to symmetrize domain switching hysteresis loops in LiNbO3 domain-wall nanodevices with improved polarization retention

Mechanical strain modulation of domain wall currents across LiNbO3 nanosensors

Size-driven transition of domain switching kinetics in LiNbO3 domain-wall memory

Erasable Ferroelectric Domain Wall Diodes

In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO3 Thin Films

Large domain-wall currents in epitaxial Au/BiFeO3/SrRuO3 thin-film capacitors with modulated oxygen vacancy and wall densities

Size-Controlled Polarization Retention and Wall Current in Lithium Niobate Single-Crystal Memories

Analog ferroelectric domain-wall memories and synaptic devices integrated with Si substrates

Controlled domain wall directions within nanodevices integrated on the surface of LiNbO3 single crystals

Sub 20 nm‐Node LiNbO3 Domain‐Wall Memory

Conductions through head-to-head and tail-to-tail domain walls in LiNbO3 nanodevices

Improved polarization retention in LiNbO3 single-crystal memory cells with enhanced etching angles

Surface‐Bound Domain Penetration and Large Wall Current

Engineering of Electron Confinement through Defect‐Based Localized Polarization on SrTiO3 Surface

Large domain-wall current in BiFeO3 epitaxial thin films

Energy-Efficient Ferroelectric Domain Wall Memory with Controlled Domain Switching Dynamics

Nonvolatile ferroelectric field-effect transistors

High temperature ferroelectric domain wall memory

Low-voltage operation of high-density ferroelectric domain wall memory

Ferroelectric domain wall memory with embedded selector realized in LiNbO3 single crystals integrated on Si wafers

新型低维铁电材料及其器件

Effects of atmosphere, metal films, temperatures and holding time on the surface topography and electrical conductivity of LiNbO3 single crystals

Charge-Transfer-Induced Interfacial Exchange Coupling at the Co / Bi Fe O 3 Interface

Improved Ferroelectric Performance of Mg-Doped LiNbO3 Films by an Ideal Atomic Layer Deposited Al2O3 Tunnel Switch Layer

The Observation of Domain‐Wall Current Transients Along with Charge Injection at Elevated Temperatures

Next-generation ferroelectric domain-wall memories: principle and architecture

Thickness Effect on (La0.26Bi0.74)2Ti4O11Thin-Film Composition and Electrical Properties

Strain induced enhancement of erasable domain wall current in epitaxial BiFeO3 thin films

Low-frequency charge trapping and bistable domain switching in Mg-doped LiNbO3 single crystal films

Hierarchical Domain Structure and Extremely Large Wall Current in Epitaxial BiFeO3 Thin Films

A current transient method for trap analysis in BiFeO3 thin films

Fatigue behavior of resistive switching in a BiFeO 3 thin film

Stripe domains in epitaxial BiFeO3 thin films on (100) SrTiO3 substrates

Improved Polarization Retention of BiFeO3Thin Films Using GdScO3（110） Substrates

Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories

The abnormal photovoltaic effect in BiFeO3 thin films modulated by bipolar domain orientations and oxygen-vacancy migration

The Influence of Conductive Nanodomain Walls on the Photovoltaic Effect of BiFeO3 Thin Films

Nanosecond Characterization of Regional Domain Imprint from Fast Domain Switching Currents in Pb（Zr,Ti）O3Thin Films

Effect of poling process on resistive switching in Au/BiFeO3/SrRuO3 structures

High-desity nonvolatile ferroelectric resisitive memory

Buckling Effect Induced Abnormal Out of Plane Domain Stripe in BiFeO3Single-Crystalline Thin Film Investigated by Piezoresponse Force Microscopy

Alternative interpretations for decreasing voltage with increasing charge in ferroelectric capacitors

Voltage linearity modulation and polarity dependent conduction in metal-insulator-metal capacitors with atomic-layer-deposited Al2O3/ZrO2/SiO2 nano-stacks

Ferroelectric polarization and defect-dipole switching in an epitaxial (111) BiFeO3 thin film

Investigation of the growth mechanism of SrRuO3thin films fabricated by pulsed laser deposition

Polarization fatigue in antiferroelectric (Pb,La)(Zr,Ti)O3 thin films: The role of the effective strength of driving waveform

The effect of in situ annealing oxygen pressure on the ferroelectric resistive switching characteristic

Accelerated domain switching speed in single-crystal LiNbO3 thin films

Domain switching kinetics in ferroelectric-resistive BiFeO3 thin film memories

Photodetectors: Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics (Adv. Mater. 42/2015)

Giant Dielectric Permittivity in Ferroelectric Thin Films: Domain Wall Ping Pong

Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics

Antiferroelectric Thin Films: Giant Negative Electrocaloric Effect in Antiferroelectric La‐Doped Pb(ZrTi)O3 Thin Films Near Room Temperature (Adv. Mater. 20/2015)