郭晶

2026

激光熔覆Ni-WC的农用刀具磨损行为与自磨刃形成机制研究

《农业机械学报》

2026

“材料力学”线上线下混合式一流课程建设——针对农业工程类专业

《教育教学论坛》

2026

激光沉积参数对镍钛合金成形与磨损的影响

《表面技术》

2025

面向农业工程类研究生的创新人才培养体系构建——基于科产教融合多学科协同育人的视角

《农业与技术》

DOI

2024

基于RecurDyn的小型履带式动力底盘设计与仿真分析

《农业工程》

2024

Global forest resilience change from 2001 to 2022

International Journal of Remote Sensing

DOI

2023

农业机械化及其自动化专业人才培养创新与实践——以山东农业大学为例

《教育教学论坛》

2023

机械工程专硕“一线、五路径”人才培养体系

《教育教学论坛》

2022

A global forest reference set with time series annual change information from 2000 to 2020

International Journal of Remote Sensing

DOI

2022

ANALYSIS OF QUALITY REVIEW OF LAND COVER CLASSIFICATION PRODUCT IN GEOGRAPHIC NATIONAL CONDITIONS MONITORING

The International Archives of the Photogrammetry, Remote Sensing and Spatial Information Sciences

DOI

2022

Forest cover change in China from 2000 to 2016

International Journal of Remote Sensing

DOI

2022

Multiscale modeling of semimetal contact to two-dimensional transition metal dichalcogenide semiconductor

Applied Physics Letters

DOI

2022

Performance Assessment of Quantum Processor Based on p-Type Semiconductor Quantum Dot Array

International Conference on Quantum Computing and Engineering

DOI

2022

Computational Screening and Multiscale Simulation of Barrier-Free Contacts for 2D Semiconductor pFETs

International Electron Devices Meeting

DOI

2021

Contact Engineering for High-Performance N-Type 2D Semiconductor Transistors

International Electron Devices Meeting

DOI

2021

Multiobjective Design of 2-D-Material-Based Field-Effect Transistors With Machine Learning Methods

IEEE Transactions on Electron Devices

DOI

2021

A Tantalum Disulfide Charge-Density-Wave Stochastic Artificial Neuron for Emulating Neural Statistical Properties.

Nano letters (Print)

DOI

2021

Atomic Layer MoTe2 Field-Effect Transistors and Monolithic Logic Circuits Configured by Scanning Laser Annealing.

ACS Nano

DOI

2021

Reconfigurable Stochastic neurons based on tin oxide/MoS2 hetero-memristors for simulated annealing and the Boltzmann machine

Nature Communications

DOI

2020

HORIZONTAL ACCURACY ASSESSMENT OF GOOGLE EARTH DATA OVER TYPICAL REGIONS OF ASIA

DOI

2020

Data retention and low voltage operation of Al2O3/Hf0.5Zr0.5O2 based ferroelectric tunnel junctions

Nanotechnology

DOI

2020

Corrigendum: Computational methods for 2D materials: discovery, property characterization, and application design (2017 J. Phys.: Condens. Matter 29 473001)

Journal of Physics: Condensed Matter

DOI

2020

Controlling Polarity of MoTe2 Transistors for Monolithic Complementary Logic via Schottky Contact Engineering.

ACS Nano

DOI

2020

Florida Ferroelectric Tunnel Junction Device Model

DOI

2020

Speed Up Quantum Transport Device Simulation on Ferroelectric Tunnel Junction With Machine Learning Methods

IEEE Transactions on Electron Devices

DOI

2020

A computational study of spin Hall effect device based on 2D materials

DOI

2020

High tunnelling electroresistance in a ferroelectric van der Waals heterojunction via giant barrier height modulation

DOI

2020

Variability and Fidelity Limits of Silicon Quantum Gates Due to Random Interface Charge Traps

IEEE Electron Device Letters

DOI

2020

Identifying alternative ferroelectric materials beyond Hf(Zr)O2

DOI

2019

基于LabVIEW的变量泵测试平台开发与分析

《机械工程与自动化》

2019

Stable classification with limited sample: transferring a 30-m resolution sample set collected in 2015 to mapping 10-m resolution global land cover in 2017.

Science Bulletin

DOI

2019

Tunable Stochastic Memristive Device for Simulated Annealing in Boltzmann Machine Designed by a Machine Learning Method

2019

Machine Learning Approach for Device-Circuit Co-Optimization of Stochastic-Memristive-Device-Based Boltzmann Machine

arXiv.org

2019

Compact Model of Carrier Transport in Monolayer Transition Metal Dichalcogenide Transistors

IEEE Transactions on Electron Devices

DOI

2019

Performance Potential of 2D Kagome Lattice Interconnects

IEEE Electron Device Letters

DOI

2018

The Potential of Spectral Indices in Detecting Various Stages of Afforestation over the Loess Plateau Region of China

Remote Sensing

DOI

2018

On Low-Resistance Contacts to 2-D MoTe2 by Crystalline Phase Junctions

IEEE Transactions on Electron Devices

DOI

2018

Tunneling current in HfO2 and Hf0.5Zr0.5O2-based ferroelectric tunnel junction

DOI

2018

Atomically Thin CBRAM Enabled by 2-D Materials: Scaling Behaviors and Performance Limits

IEEE Transactions on Electron Devices

DOI

2018

On Image Charge Induced Barrier Lowering in Graphene–Semiconductor Contacts

IEEE transactions on nanotechnology

DOI

2018

Computational Assessment of Silicon Quantum Gate Based on Detuning Mechanism for Quantum Computing

IEEE Transactions on Electron Devices

DOI

2018

Performance Assessment of Resonantly Driven Silicon Two-Qubit Quantum Gate

IEEE Electron Device Letters

DOI

2018

Simulation of Nanoscale Transistors from Quantum and Multiphysics Perspective

Nanoscale Devices

DOI

2017

The first all-season sample set for mapping global land cover with Landsat-8 data.

Science Bulletin

DOI

2017

Monolayer Transistor SRAMs

ACM Journal on Emerging Technologies in Computing Systems

DOI

2017

Two-Dimensional Intrinsic Half-Metals With Large Spin Gaps.

Nano letters (Print)

DOI

2017

Barrier Lowering in Contacts between Graphene and Semiconductor Materials

2017

A Simple Model of Negative Capacitance FET With Electrostatic Short Channel Effects

IEEE Transactions on Electron Devices

DOI

2017

Assessment of 2-D Transition Metal Dichalcogenide FETs at Sub-5-nm Gate Length Scale

IEEE Transactions on Electron Devices

DOI

2017

Emulating Bilingual Synaptic Response Using a Junction-Based Artificial Synaptic Device.

ACS Nano

DOI

2017

Atomically Thin Femtojoule Memristive Device

Advances in Materials

DOI

2016

An all-season sample database for improving land-cover mapping of Africa with two classification schemes

DOI

2016

Forest cover dynamics from Landsat time-series data over Yan’an city on the Loess Plateau during the Grain for Green Project

DOI

2016

Vertical Organic Field-Effect Transistors for Integrated Optoelectronic Applications.

ACS Applied Materials and Interfaces

DOI

2016

Scaling Analysis of High Gain Monolayer MoS2 Photodetector for Its Performance Optimization

IEEE Transactions on Electron Devices

DOI

2016

Thermal Transport in Single-Layer MoS2 and Black Phosphorus Transistors

IEEE Transactions on Electron Devices

DOI

2015

An efficient framework for modeling clouds from Landsat8 images

International Conference on Graphic and Image Processing

DOI

2015

Simulation of Phosphorene Field-Effect Transistor at the Scaling Limit

IEEE Transactions on Electron Devices

DOI

2015

Graphene Nanoribbons Under Mechanical Strain

Advances in Materials

DOI

2015

Graphene: Graphene Nanoribbons Under Mechanical Strain (Adv. Mater. 2/2015)

DOI

2015

Monolayer transition metal dichalcogenide and black phosphorus transistors for low power robust SRAM design

Design Automation Conference

DOI

2015

Electrothermal Investigation on Vertically Aligned Single-Walled Carbon Nanotube Contacted Phase-Change Memory Array for 3-D ICs

IEEE Transactions on Electron Devices

DOI

2015

Plasmonics in strained monolayer black phosphorus

DOI

2015

Electrothermal simulation of single-walled carbon nanotube (SWCNT)-based phase change memory for 3-DICs

IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization

DOI

2015

Assessment of performance potential of MoS2-based topological insulator field-effect transistors

DOI

2015

Erratum: “Assessment of performance potential of MoS2-based topological insulator field-effect transistors” [J. Appl. Phys. 118, 124502 (2015)]

DOI

2015

Dual-gated MoS2/WSe2 van der Waals tunnel diodes and transistors.

ACS Nano

DOI

2014

Vertical field-effect transistor enabled by carbon nanostructure hetero junction contact for optoelectronics

DOI

2014

Role of chemical termination in edge contact to graphene

DOI

2014

Effect of Nano‐Porosity on High Gain Permeable Metal‐Base Transistors

DOI

2014

Intrinsic delay of permeable base transistor

DOI

2014

Performance Limits Projection of Black Phosphorous Field-Effect Transistors

IEEE Electron Device Letters

DOI

2014

Operating principles of vertical transistors based on monolayer two-dimensional semiconductor heterojunctions

DOI

2014

Frequency-dependent quantum capacitance and plasma wave in monolayer transition metal dichalcogenides

DOI

2014

Graphene/MoS$_{2}$ Schottky diodes and their integration for metal base transistors

2014

Charge transport and optoelectronic process in an atomically thin p-n junction

2014

Bandgap Engineering in Graphene

DOI

2014

Performance evaluation of MoS2-WTe2 vertical tunneling transistor using real-space quantum simulator

2014 IEEE International Electron Devices Meeting

DOI

2014

Strain-induced indirect to direct bandgap transition in multilayer WSe2.

Nano letters (Print)

DOI

2014

Simulation of phosphorene Schottky-barrier transistors

DOI

2014

Atomically thin p-n junctions with van der Waals heterointerfaces.

Nature Nanotechnology

DOI

2013

On Monolayer ${\rm MoS}_{2}$ Field-Effect Transistors at the Scaling Limit

IEEE Transactions on Electron Devices

DOI

2013

Computational study of graphene-based vertical field effect transistor

DOI

2013

Device Performance of Heterojunction Tunneling Field-Effect Transistors Based on Transition Metal Dichalcogenide Monolayer

IEEE Electron Device Letters

DOI

2013

Coupled Electro–Thermal Simulation for Self-Heating Effects in Graphene Transistors

IEEE Transactions on Electron Devices

DOI

2013

Degenerate n-doping of few-layer transition metal dichalcogenides by potassium.

Nano letters (Print)

DOI

2013

Quantum simulation of topological insulator based spin transfer torque device

DOI

2013

Dissipative transport in nanoscale monolayer MoS2 transistors

Device Research Conference

DOI

2013

Modeling and simulation of carbon nanotube-semiconductor heterojunction vertical field effect transistors

DOI

2012

Modeling of a vertical tunneling graphene heterojunction field-effect transistor

DOI

2012

Topological-insulator-based non-volatile memory cells: A quantum device simulation

International Electron Devices Meeting

DOI

2012

A computational study of graphene silicon contact

DOI

2012

Modeling of graphene nanoribbon devices.

Nanoscale

DOI

2012

Assessment of High-Frequency Peformance Potential of Graphene Field-Effect Transistors

2012

Thermal transport in grain boundary of graphene by non-equilibrium Green’s function approach

DOI

2012

Quantum Size Effects on the Chemical Sensing Performance of Two-Dimensional Semiconductors

DOI

2012

Observation of degenerate one-dimensional sub-bands in cylindrical InAs nanowires.

Nano letters (Print)

DOI

2012

Carrier dynamics and design optimization of electrolyte-induced inversion layer carbon nanotube-silicon Schottky junction solar cell

DOI

2012

Chiral tunneling in trilayer graphene

DOI

2012

Modelling very large magnetoresistance of graphene nanoribbon devices.

Nanoscale

DOI

2012

Response to “Comment on ‘Chiral tunneling in trilayer graphene’” [Appl. Phys. Lett. 101, 226101 (2012)]

DOI

2012

Dissipative quantum transport in nanoscale transistors

Device Research Conference

DOI

2012

Nanoscale InGaSb heterostructure membranes on Si substrates for high hole mobility transistors.

Nano letters (Print)

DOI

2012

Ab initio quantum transport simulation of silicide-silicon contacts

DOI

2012

Strain-induced conductance modulation in graphene grain boundary.

Nano letters (Print)

DOI

2012

Performance projection of graphene nanomesh and nanoroad transistors

Nano Reseach

DOI

2012

Metal contact to graphene nanoribbon

DOI

2012

Quantum mechanical simulation of graphene photodetectors

DOI

2012

A computational study of high-frequency behavior of graphene field-effect transistors

DOI

2012

Quantum transport simulation of graphene transistors

2011

Bandgap opening in boron nitride confined armchair graphene nanoribbon

DOI

2011

Electrolyte-induced inversion layer Schottky junction solar cells.

Nano letters (Print)

DOI

2011

Multilayer graphene nanoribbon under vertical electric field

DOI

2011

ZnO, GaN, and InN Functionalized Nanowires for Sensing and Photonics Applications

IEEE Journal of Selected Topics in Quantum Electronics

DOI

2011

Graphene nanoribbons with smooth edges behave as quantum wires.

Nature Nanotechnology

DOI

2011

Transversal electric field effect in multilayer graphene nanoribbon

DOI

2011

Controlled chlorine plasma reaction for noninvasive graphene doping.

Journal of the American Chemical Society

DOI

2011

Barrier height determination of silicide-silicon contact by hybrid density functional simulation

DOI

2011

Graphene Nanoribbon FETs: Technology Exploration for Performance and Reliability

IEEE transactions on nanotechnology

DOI

2011

Role of dissipative quantum transport in DC, RF, and self-heating characteristics of short channel graphene FETs

International Electron Devices Meeting

DOI

2011

Assessment of carbon nanotube array transistors: A three-dimensional quantum simulation

DOI

2011

Assessment of graphene nanomesh and nanoroad transistors by chemical modification

International Electron Devices Meeting

DOI

2011

Multilayer graphene under vertical electric field

DOI

2011

Inelastic Phonon Scattering in Graphene FETs

IEEE Transactions on Electron Devices

DOI

2011

Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

IEEE Transactions on Electron Devices

DOI

2011

Performance analysis of carbon nanotube contacted phase change memory by finite element method

DOI

2011

Two-dimensional quantum mechanical modeling of silicide–silicon contact resistance for nanoscale silicon-on-insulator metal-oxide-semiconductor field effect transistor

DOI

2011

Assessment of high-frequency performance limits of graphene field-effect transistors

DOI

2010

Graphene tunneling FET and its applications in low-power circuit design

ACM Great Lakes Symposium on VLSI

DOI

2010

A computational study on interfacial doping and quantum transport of silicide-silicon contacts

IEEE International Nanoelectronics Conference

DOI

2010

Effects of edge chemistry doping on graphene nanoribbon mobility

Device Research Conference

DOI

2010

Atomistic simulation of graphene nanoribbon tunneling transistors

IEEE International Nanoelectronics Conference

DOI

2010

Edge dopant energy levels of graphene nanoribbons

DOI

2010

Local strain in tunneling transistors based on graphene nanoribbons

DOI

2010

Carbon-based nanomaterials as contacts to graphene nanoribbons

DOI

2010

Channel Length Scaling Effects in Graphene Field-Effect Transistor

2009

Multilayer graphene nanoribbon for 3D stacking of the transistor channel

International Electron Devices Meeting

DOI

2009

Spin-polarized edge and transport in graphene nanoscale junctions

DOI

2009

Projected performance advantage of multilayer graphene nanoribbons as a transistor channel material

DOI

2009

N-Doping of Graphene Through Electrothermal Reactions with Ammonia

Science

DOI

2009

Device Simulation of SWNT-FETs

DOI

2009

Computational study of tunneling transistor based on graphene nanoribbon.

Nano letters (Print)

DOI

2009

High-field transport and velocity saturation in graphene

DOI

2009

Modeling edge effects in graphene nanoribbon field-effect transistors with real and mode space methods

DOI

2009

A theoretical study on thermoelectric properties of graphene nanoribbons

DOI

2009

Chemically derived graphene nanoribbons: physical properties and electronics

2009

First principal simulation of CoSi2/Si and NiSi2/Si contacts

Device Research Conference

DOI

2009

Band gap of strained graphene nanoribbons

DOI

2008

Session 7: Solid-state and nanoelectronic devices - spin devices, batteries and steep slope FETs

2008 IEEE International Electron Devices Meeting

DOI

2008

Effect of Disorders in Graphene Nanoribbon Field-Effect Transistors

2008

Field effect on spin-polarized transport in graphene nanoribbons

DOI

2008

Computational model of edge effects in graphene nanoribbon transistors

DOI

2008

Analytical Theory of Graphene Nanoribbon Transistors

2008 IEEE International Workshop on Design and Test of Nano Devices, Circuits and Systems

DOI

2008

Graphene nanoribbon FETs: Technology exploration and CAD

IEEE/ACM International Conference on Computer-Aided Design

DOI

2008

Edge chemistry engineering of graphene nanoribbon transistors: A computational study

2008 IEEE International Electron Devices Meeting

DOI

2008

Metal-semiconductor junction of graphene nanoribbons

DOI

2008

Technology exploration for graphene nanoribbon FETs

2008 45th ACM/IEEE Design Automation Conference

DOI

2008

Modeling and Fabrication of ZnO Nanowire Transistors

IEEE Transactions on Electron Devices

DOI

2008

Nanotube enabled thin film transistors utilizing low mobility organic semiconductors.

2008

A study of spin relaxation on spin transfer switching of a noncollinear magnetic multilayer structure

DOI

2008

Carbon‐Nanotube‐Enabled Vertical Field Effect and Light‐Emitting Transistors

DOI

2008

Analysis of ballistic monolayer and bilayer graphene field-effect transistors

DOI

2008

Performance Comparison of Graphene Nanoribbon FETs With Schottky Contacts and Doped Reservoirs

IEEE Transactions on Electron Devices

DOI

2008

Carrier scattering in graphene nanoribbon field-effect transistors

DOI

2008

Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors.

Physical Review Letters

DOI

2008

Diameter-dependent electron mobility of InAs nanowires.

Nano letters (Print)

DOI

2007

Introduction to FETToy

2007

Introduction to CNTbands

2007

Gate electrostatics and quantum capacitance of graphene nanoribbons.

Nano letters (Print)

DOI

2007

A Computational Study of Vertical Partial-Gate Carbon-Nanotube FETs

IEEE Transactions on Electron Devices

DOI

2007

Performance Comparison of Graphene Nanoribbon Schottky Barrier and MOS FETs

2007 IEEE International Electron Devices Meeting

DOI

2007

Analysis of Strain Effects in Ballistic Carbon Nanotube FETs

IEEE Transactions on Electron Devices

DOI

2007

Theoretical Investigations on Thermal Light Emission From Metallic Carbon Nanotubes

IEEE transactions on nanotechnology

DOI

2007

Solid-State and Nanoelectronic Devices - Non- Classical Devices And Interconnects

2007 IEEE International Electron Devices Meeting

DOI

2007

Nanopillar ferromagnetic nanostructure as highly efficient spin injector into semiconductor

DOI

2007

Subband gap impact ionization and excitation in carbon nanotube transistors

DOI

2007

Effects of nanotube alignment and measurement direction on percolation resistivity in single-walled carbon nanotube films

DOI

2007

On the current delivery limit of semiconducting carbon nanotubes

DOI

2007

Introduction to Schred

2007

Bandstructure of Carbon Nanotubes and Nanoribbons

2007

Electrically driven thermal light emission from individual single-walled carbon nanotubes.

Nature Nanotechnology

DOI

2007

Quantum Dot Lab Learning Module: An Introduction

2007

Scaling Behaviors of Graphene Nanoribbon FETs

2007 65th Annual Device Research Conference

DOI

2007

Effect of edge roughness in graphene nanoribbon transistors

DOI

2007

Scaling Behaviors of Graphene Nanoribbon FETs: A Three-Dimensional Quantum Simulation Study

IEEE Transactions on Electron Devices

DOI

2007

Role of grain boundaries in ZnO nanowire field-effect transistors

DOI

2007

Performance Limit and Scaling Behaviors of Carbon Nanoribbon Transistors

2007

A Tutorial for Nanoelectronics Simulation Tools

2007

Dynamic Two-Port Parameters of Ballistic Carbon Nanotube FETs: A Quantum Simulation Study

2007 65th Annual Device Research Conference

DOI

2007

Introduction to nanoMOS

2006

Performance Assessment of Subpercolating Nanobundle Network Thin-Film Transistors by an Analytical Model

IEEE Transactions on Electron Devices

DOI

2006

High sensitivity and nonlinearity of carbon nanotube charge-based sensors

DOI

2006

A computational study of carbon nanotube optoelectronic devices

SPIE Optics East

DOI

2006

Time-dependent quantum transport and nonquasistatic effects in carbon nanotube transistors

DOI

2006

Theoretical Model for the Nanobundle Network Transistors Below and Above Percolation Limit

2006

CARBON NANOTUBE FIELD-EFFECT TRANSISTORS

DOI

2006

Comparison of performance limits for carbon nanoribbon and carbon nanotube transistors

DOI

2006

Carbon Nanotube Electronics: Modeling, Physics, and Applications

2006

Heat dissipation in carbon nanotube transistors

DOI

2006

Three-dimensional electrostatic effects of carbon nanotube transistors

IEEE transactions on nanotechnology

DOI

2006

Optimization of Transistor Design for Carbon Nanotubes

2006

On Current Carrying Capacity of Single Wall Semiconducting Carbon Nanotubes

2006

MOSCNT: code for carbon nanotube transistor simulation

2006

Theoretical investigation on photoconductivity of single intrinsic carbon nanotubes

DOI

2006

Effect of phonon scattering on intrinsic delay and cutoff frequency of carbon nanotube FETs

IEEE Transactions on Electron Devices

DOI

2005

Design of a novel three-valued static memory using Schottky barrier carbon nanotube FETs

5th IEEE Conference on Nanotechnology, 2005.

DOI

2005

A quantum-mechanical treatment of phonon scattering in carbon nanotube transistors

DOI

2005

Performance assessment of sub-percolating nanobundle network transistors by an analytical model

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

DOI

2005

Role of phonon scattering in carbon nanotube field-effect transistors

DOI

2005

Nanoscale Transistors: Device Physics, Modeling and Simulation

2005

Carbon nanotube-based non-volatile memory and charge sensors

SPIE Optics East

DOI

2005

Carrier transport and light-spot movement in carbon-nanotube infrared emitters

DOI

2004

Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays

DOI

2004

Electrostatics of 3D carbon nanotube field-effect transistors

2004 Abstracts 10th International Workshop on Computational Electronics

DOI

2004

Monte Carlo Simulation of Carbon Nanotube Devices

2004 Abstracts 10th International Workshop on Computational Electronics

DOI

2004

Toward Multiscale Modeling of Carbon Nanotube Transistors

DOI

2004

3D Electrostatics of Carbon Nanotube Field-Effect Transistors

DOI

2004

Atomistic Simulation of Carbon Nanotube Field-Effect Transistors Using Non-Equilibrium Green’s Function Formalism

2004 Abstracts 10th International Workshop on Computational Electronics

DOI

2004

High performance n-type carbon nanotube field-effect transistors with chemically doped contacts.

Nano letters (Print)

DOI

2004

Performance analysis and design optimization of near ballistic carbon nanotube field-effect transistors

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.

DOI

2004

Choice of flat-band voltage, V/sub DD/ and diameter of ambipolar Schottky-barrier carbon nanotube transistors in digital circuit design

4th IEEE Conference on Nanotechnology, 2004.

DOI

2003

Theory of ballistic nanotransistors

DOI

2003

A numerical study of scaling issues for Schottky-barrier carbon nanotube transistors

IEEE Transactions on Electron Devices

DOI

2003

Carbon Nanotube Field-Effect Transistors with Integrated Ohmic Contacts and High-κ Gate Dielectrics

Nano letters (Print)

DOI

2003

Electrostatics of nanowire transistors

2003 Third IEEE Conference on Nanotechnology, 2003. IEEE-NANO 2003.

DOI

2017

Atomically-thin Femtojoule Filamentary Memristor

arXiv preprint

2011

Highly Quantum-Confined InAs Nanoscale Membranes

arXiv preprint