邓林峰｜湖南大学｜学者主页

期刊论文

2025

A unified I-V model of SiC double-gate MOSFETs

Yi Li, Tao Zhou, Zixuan Guo, Yuqiu Yang, Junyao Wu, Huan Cai, Jun Wang, Jungang Yin, Qin Liu, Linfeng Deng

Journal of Computational Electronics

DOI

2024

An Analytical Subthreshold I–V Model of SiC Double Gate JFETs

Yi Li, Tao Zhou, Zixuan Guo, Yuqiu Yang, Junyao Wu, Huan Cai, Jun Wang, Jungang Yin, Qin Liu, Linfeng Deng

International Journal of Numerical Modelling Electronic Networks Devices and Fields

DOI

2024

An analytical I-V model of SiC double-gate junctionless MOSFETs

Yi Li, Tao Zhou, Zixuan Guo, Yuqiu Yang, Junyao Wu, Huan Cai, Jun Wang, Jungang Yin, Wenqing Huang, Miao Zhang, Nianxing Hou, Qin Liu, Linfeng Deng

Microelectronics Journal

DOI

2024

An analytical subthreshold I–V model of SiC MOSFETs

Yi Li, Tao Zhou, Geng Jiang, Liangbin Deng, Liangbin Deng, Zixuan Guo, Qiaoling Sun, Bangyong Yin, Yuqiu Yang, Junyao Wu, Huan Cai, Jun Wang, Jungang Yin, Qin Liu, Linfeng Deng, Linfeng Deng

Microelectronics Journal

DOI

2021

High dv/dt in High Voltage SiC IGBT and Method of Suppression

Hangzhi Liu, Jiaqi Guo, Wei Yue, Hengyu Yu, Shiwei Liang, Gaoqiang Deng, Yuwei Wang, Linfeng Deng, Yuming Zhou, Jun Wang, Z. John Shen

IEEE International Power Electronics and Application Symposium (PEAS)

DOI

2020

Compact I-V Model for Ambipolar Field-Effect Transistors With 2D Transition Metal Dichalcogenide as Semiconductor

Linfeng Deng, Jin Li, Qin Liu, Haiqing Huang, Jun Wang, Dong Cheng, He Wen, Seongil Im

IEEE Transactions on Nanotechnology

DOI

2019

Active Gate Delay Time Control of Si/SiC Hybrid Switch for Junction Temperature Balance Over a Wide Power Range

Zongjian Li, Jun Wang, Linfeng Deng, Zhizhi He, Xin Yang, Bing Ji, Z. John Shen

IEEE Transactions on Power Electronics

DOI

2019

Monolithic Integration of SiC Power BJT and Small-Signal BJTs for Power ICs

Shiwei Liang, Jun Wang, Linfeng Deng, Fang Fang, Z. John Shen

IEEE Journal of Emerging and Selected Topics in Power Electronics

DOI

2019

An Improved Proportional Base Driver for Minimizing Driver Power Consumption of SiC BJT Over Wide Current and Temperature Range

Shiwei Liang, Jun Wang, Linfeng Deng, Yize Shi, Xin Yin, Z. John Shen

IEEE Journal of Emerging and Selected Topics in Power Electronics

DOI

2019

Influence of Device Parameter and Parasitic Inductances on Transient Behaviors of Parallel Connection of SiC GTOs

Shiwei Liang, Zhiqiang Li, Kun Zhou, Linfeng Deng, Juntao Li, Jun Wang

IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

DOI

2019

Optimization Design of Isolation Rings in Monolithically Integrated 1200V SiC Transistor and Antiparallel Diode for Improved Blocking Voltage

Shiwei Liang, Jun Wang, Fang Fang, Linfeng Deng, Z. John Shen

IEEE Journal of Emerging and Selected Topics in Power Electronics

DOI

2019

Explicit continuous I-V model for 2D transition metal dichalcogenide field-effect transistors

Linfeng Deng, C.M. Si, H.Q. Huang, J. Wang, He Wen, Seongil Im

Microelectronics Journal

DOI

2018

Simulation study of a 4H-SiC lateral BJT for monolithic power integration

Shiwei Liang, Jun Wang, Fang Fang, Linfeng Deng

Journal of Semiconductors

DOI

2018

Experimental comparison of SiC GTO and ETO for pulse power applications

Cheng Zeng, Linfeng Deng, Zongjian Li, Jun Wang

Journal of Semiconductors

DOI

2018

An Improved SPICE Model of SiC BJT Incorporating Surface Recombination Effect

Jun Wang, Shiwei Liang, Linfeng Deng, Xin Yin, Z. John Shen

IEEE Transactions on Power Electronics

DOI

2018

A New Proportional Base Driver Technique for Minimizing Driver Loss of SiC BJT

Shiwei Liang, Linfeng Deng, Zhigao Peng, Yize Shi, Z. John Shen, Jun Wang

IEEE Energy Conversion Congress and Exposition (ECCE)

DOI

2018

Optimal control strategies for SiC MOSFET and Si IGBT based hybrid switch

Zongjian Li, Jun Wang, Xi Jiang, Z. John Shen, Xin Yin, Cheng Zeng, Linfeng Deng

IEEE Applied Power Electronics Conference and Exposition (APEC)

DOI

2018

A modified behavior spice model for SiC BJT

Shiwei Liang, Jun Wang, Zhigao Peng, Guanghui Chen, Xin Yin, Z. John Shen, Linfeng Deng

IEEE Applied Power Electronics Conference and Exposition (APEC)

DOI

2017

Impact of gate control on short-circuit capability of SiC/Si based hybrid switch

Xi Jiang, Jun Wang, Zongjian Li, Linfeng Deng, Jiwu Lu, Xiaohao Wang, Cheng Zeng, Z. John Shen

IEEE Energy Conversion Congress and Exposition (ECCE)

DOI

2016

SiC GTO晶闸管技术现状及发展

王俊，张渊，李宗鉴，邓林峰

《控制与信息技术》

会议论文

2006

重频RSD的关断模型研究

邓林峰，余岳辉，梁琳，王璐

《2006中国电工技术学会电力电子学会第十届学术年会》

2006

脉冲功率源及半导体开关技术综述

余岳辉，邓林峰，梁琳，吕炳科

《2006中国电工技术学会电力电子学会第十届学术年会论文摘要集》

2006

RSD在故障过流器中的应用

彭亚斌，余岳辉，梁琳，邓林峰

《2006中国电工技术学会电力电子学会第十届学术年会论文摘要集》

邓林峰

精选作品

期刊论文

A unified I-V model of SiC double-gate MOSFETs

An Analytical Subthreshold I–V Model of SiC Double Gate JFETs

An analytical I-V model of SiC double-gate junctionless MOSFETs

An analytical subthreshold I–V model of SiC MOSFETs

High dv/dt in High Voltage SiC IGBT and Method of Suppression

Compact I-V Model for Ambipolar Field-Effect Transistors With 2D Transition Metal Dichalcogenide as Semiconductor

Active Gate Delay Time Control of Si/SiC Hybrid Switch for Junction Temperature Balance Over a Wide Power Range

Monolithic Integration of SiC Power BJT and Small-Signal BJTs for Power ICs

An Improved Proportional Base Driver for Minimizing Driver Power Consumption of SiC BJT Over Wide Current and Temperature Range

Influence of Device Parameter and Parasitic Inductances on Transient Behaviors of Parallel Connection of SiC GTOs

Optimization Design of Isolation Rings in Monolithically Integrated 1200V SiC Transistor and Antiparallel Diode for Improved Blocking Voltage

Explicit continuous I-V model for 2D transition metal dichalcogenide field-effect transistors

Simulation study of a 4H-SiC lateral BJT for monolithic power integration

Experimental comparison of SiC GTO and ETO for pulse power applications

An Improved SPICE Model of SiC BJT Incorporating Surface Recombination Effect

A New Proportional Base Driver Technique for Minimizing Driver Loss of SiC BJT

Optimal control strategies for SiC MOSFET and Si IGBT based hybrid switch

A modified behavior spice model for SiC BJT

Impact of gate control on short-circuit capability of SiC/Si based hybrid switch

SiC GTO晶闸管技术现状及发展

会议论文

重频RSD的关断模型研究

脉冲功率源及半导体开关技术综述

RSD在故障过流器中的应用

研究方向