闫大为｜江南大学｜学者主页

2026

高温栅压应力对SiC MOSFET电学特性的影响

党宁，华文渊，胡晴，李杨，王霄，敖金平，闫大为

《微电子学》

DOI

2026

p-GaN HEMTs正向栅极电容与电流特性研究

华文渊，张东楷，胡晴，党宁，于国浩，闫大为

《微电子学》

DOI

2026

氢离子注入GaN高电子迁移率晶体管栅极正向输运、退化与击穿

张东楷，胡晴，郭玉龙，翟颖，刘栩珊，王梓旭，于国浩，闫大为

《物理学报》

2026

GaN基LED正向输运与低频噪声特性

胡晴，张东楷，刘栩珊，王梓旭，曾红燕，黄慧诗，闫大为

《激光与光电子学进展》

2026

Vertical GaN Schottky Barrier Diode Based on Anode-First Process and Low-Temperature Ohmic Contact

Xiao Wang, Tian-Yun Zhu, Ping Gong, Tian-Yi He, Sen Peng, Xia Zhu, JingRun Miao, Feng-Qiu Jiang, Tao Liu, Zhiwei Chen, Zhangcheng Liu, Yang Li, Dawei Yan, Li-Hua Bai, Guofeng Yang, Jianbo Liang, Jin‐Ping Ao

IEEE Transactions on Electron Devices

DOI

2026

S-Carboxymethyl-L-Cysteine-Functionalized AlGaN/GaN High-Electron-Mobility Transistor for Cd 2+ Detection

ShiMin Liu, Xiao Wang, Ping Gong, Ming Guo, JiaKang Chen, Xia Zhu, JingRun Miao, Fengqiu Jiang, Tao Liu, Zhiwei Chen, Zhangcheng Liu, Yang Li, Dawei Yan, Lihua Bai, Guofeng Yang, Jiyu Zhou, Jianbo Liang, Jin‐Ping Ao

IEEE Sensors Journal

DOI

2025

基于锁相红外技术的SiC MOSFET热分布与“热点”定位研究

党宁，胡晴，张东楷，翟颖，郭玉龙，华文渊，闫大为

《微电子学》

DOI

2025

GaN芯片封装技术研究进展与趋势

宋海涛，王霄，龚平，朱霞，李杨，刘璋成，闫大为，陈治伟，尤杰，敖金平

《电子与封装》

DOI

2025

基于4H-SiC的p-i-n型紫外光探测器的光电特性研究

翟颖，郭玉龙，胡晴，张东楷，曾红燕，于平平，闫大为

《激光与光电子学进展》

2025

36.4 THz · V f T × BV figure-of-merit GaN HEMT with source field plate and SiN x passivation

Xiao Wang, Wen-Hao Xia, Pengbo Liu, Xia Zhu, Feng-Qiu Jiang, Tao Liu, Zhiwei Chen, Zhangcheng Liu, Yang Li, Dawei Yan, Lihua Bai, Ziyang Hu, Jing-Ping Ao

Semiconductor Science and Technology

DOI

2025

Noise suppression and enhanced energy resolution in NiO/β-Ga2O3 radiation detectors

X. Y. Pei, X. D. Meng, Lei Ren, Yuncheng Han, Na Sun, Weizong Xu, Fangfang Ren, Dawei Yan, Yi Tao Yang, Shulin Gu, Rong Zhang, Jiandong Ye

Applied Physics Letters

DOI

2025

Degradation Mechanisms of AlGaN/GaN High Electron Mobility Transistors Induced by High-Energy Electron Irradiation

Xiao Wang, Chong Zhang, Xia Zhu, Feng-Qiu Jiang, Tao Liu, Zhiwei Chen, Z G Liu, Yang Li, Dawei Yan, Lihua Bai, Ziyang Hu, Jin‐Ping Ao

DOI

2025

Multi-modal thermography-calibrated barrier in vertical β-Ga2O3 Schottky barrier diodes

Yi Xie, Aihua Wu, Yuwei Zhai, Yang He, Yan Liu, Hao Li, Weiye Liu, Dawei Yan, Hua-Rui Sun

Cell Reports Physical Science

DOI

2024

一种p-GaN HEMTs栅电荷表征方法

刘震，潘效飞，龚平，王燕平，叶斯灿，卢澳，闫大为

《微电子学》

2024

GaN P沟道功率器件及集成电路研究进展

朱霞，王霄，王文倩，李杨，李秋璇，闫大为，刘璋成，陈治伟，敖金平

《电子与封装》

2024

ZnO/Spiro-MeOTAD异质结自驱动光电探测器的制备及性能（特邀）

李朋凡，黄雨欣，俞学伟，冯仕亮，姜岩峰，闫大为，于平平

《光子学报》

2024

Forward leakage currents in GaN p-i-n diodes

Ao Lu, Xiaofei Pan, Xinjie Zhou, Yang Li, Xiao Wang, Jin‐Ping Ao, Dawei Yan

Solid-State Electronics

DOI

2024

Non-Intrusive and Precise Electric Field Sensing of High-Field Electron Devices by Franz-Keldysh Effect

Xinyi Pei, Hehe Gong, Na Sun, Songhao Gu, Jianhong Zhang, Zesen Liu, Fangfang Ren, Bin Guo, Dawei Yan, Hai Lu, Shulin Gu, Xinran Wang, Rong Zhang, Xiaoting Jia, Yuhao Zhang, Jian Dong Ye

Technical digest - International Electron Devices Meeting/Technical digest

DOI

2023

P-I-N型GaN紫外探测器的正向电流输运

李金晓，刘震，叶思灿，卢澳，华文渊，党宁，闫大为

《激光与光电子学进展》

2023

GaN基HEMT失效热点行为研究

廖周林，区炳显，王燕平，李金晓，闫大为

《微电子学》

2022

氮化镓基LED结温测量方法研究

冯慧玮，荣玉，叶斯灿，刘震，卢澳，李金晓，闫大为

《微电子学》

2022

高功率条件下MOSFET栅电荷特性的测量方法

王燕平，荣玉，陈雷雷，李金晓，冯慧玮，闫大为

《微电子学》

2022

Transport and Breakdown Mechanisms of Gate Leakage Current in Lattice-Matched In₀.₁₇Al₀.₈₃N/GaN HEMTs

Bingxian Ou, Ning Jin, Yancheng Li, Xiaohong Yan, Jian Xu, Yang Li, Jin‐Ping Ao, Dawei Yan

IEEE Transactions on Electron Devices

DOI

2022

GaN p-i-n ultraviolet photodetectors grown on homogenous GaN bulk substrates

Jinxiao Li, Jian Gao, Xiaohong Yan, Weiran Li, Jian Xu, Qun Wang, Bingxian Ou, Dawei Yan

Solid-State Electronics

DOI

2021

基于动态参考的超低功耗动态PWM比较电路

蒋志林，于平平，闫大为，姜岩峰

《微电子学》

DOI

2021

High-densities of free holes in homoepitaxial n-GaN induced by fluorine-plasma ion implantation

Leilei Chen, Jinxiao Li, Yanping Wang, Huiwei Feng, Dawei Yan, Xiaofeng Gu

Solid-State Electronics

DOI

2021

Accurate determination of the peak channel temperature by an electrical method combined with EL mapping technique in In0.17Al0.83N/GaN HEMTs

Leilei Chen, Xiaohong Yan, Weiran Li, Yi Huang, Dawei Yan, Xiaofeng Gu

Microelectronics Reliability

DOI

2021

Temperature dependent characteristics of Ti/Al/Ni/Au Ohmic contact on lattice-matched In0.17Al0.83N/GaN heterostructures

Dejin Zhou, Hong Xu, Leilei Chen, Hong-Liang Lü, Wei Huang, David Wei Zhang, Dawei Yan

Solid-State Electronics

DOI

2021

Enhanced Energy Resolution of GaN-on-Sapphire p-i-n Alpha-Particle Detector With Isoelectronic Al-Doped i-GaN Layer

Xinlei Geng, Xiaochuan Xia, Xingzhu Cui, Huishi Huang, X. H. Liang, Dawei Yan, Kuikui Tian, Leilei Chen, Xiaohong Yan, Ze Long, Mengchen Niu, Xiang-Cheng Meng, Hongwei Liang

IEEE Transactions on Nuclear Science

DOI

2020

晶格匹配InAlN/GaN HEMTs栅极电流击穿行为研究

金宁，陈雷雷，李金晓，周浩，闫大为，顾晓峰

《固体电子学研究与进展》

DOI

2020

晶格匹配InAlN/GaN HEMT沟道温度评估方法研究

金宁，陈雷雷，曹艳荣，梁海莲，闫大为，顾晓峰

《微电子学》

DOI

2020

GaN高压LED在极小电流与极低温度下的光电特性

田媛，陈雷雷，赵琳娜，陈珍海，闫大为，顾晓峰

《微电子学》

DOI

2020

Design of a cascade-MOS-triggered SCR with high holding-voltage for high-voltage ESD protection

Ling Zhu, Hailian Liang, Xiaofeng Gu, Xiaoxin Zhang, Dawei Yan

Solid-State Electronics

DOI

2020

Charge Transport in Vertical GaN Schottky Barrier Diodes: A Refined Physical Model for Conductive Dislocations

Leilei Chen, Ning Jin, Dawei Yan, Yanrong Cao, Linna Zhao, Hailian Liang, Bin Liu, En Xia Zhang, Xiaofeng Gu, Ronald D. Schrimpf, Daniel M. Fleetwood, Hai Lu

IEEE Transactions on Electron Devices

DOI

2019

氮化镓基高电子迁移率晶体管Kink效应研究

朱培敏，陈雷雷，金宁，吴静，姜玉德，田葵葵，黄宜明，闫大为，顾晓峰

《微电子学》

DOI

2019

氟等离子体离子注入Au/Ni/n-GaN二极管特性研究

羊群思，田葵葵，吴静，陈雷雷，刘楚乔，金宁，赵琳娜，闫大为，顾晓峰

《微电子学》

DOI

2019

GaN基肖特基势垒二极管的漏电流传输与退化机制

任舰，苏丽娜，李文佳，闫大为，顾晓峰

《半导体光电》

DOI

2019

Analysis of High-Temperature Carrier Transport Mechanisms for High Al-Content Al0.6Ga0.4N MSM Photodetectors

Yan Gu, Xianfeng Ni, Qian Fan, Xing Gu, Guoqing Chen, Guofeng Yang, Aaron James Danner, Dawei Yan, Naiyan Lu, Xiu‐Mei Zhang, Feng Xie, Yueke Wang, Bin Hua

IEEE Transactions on Electron Devices

DOI

2018

Temperature-Dependent Efficiency Droop in GaN-Based Blue LEDs

Linna Zhao, Dawei Yan, Zi‐Hui Zhang, Bin Hua, Guofeng Yang, Yanrong Cao, En Xia Zhang, Xiaofeng Gu, Daniel M. Fleetwood

IEEE Electron Device Letters

DOI

2017

Progressive current degradation and breakdown behavior in GaN LEDs under high reverse bias stress

Linna Zhao, Peihong Yu, Zixiang Guo, Dawei Yan, Hao Ran Zhou, Jinbo Wu, Cui Zhiqiang, Huarui Sun, Xiaofeng Gu

Chinese Physics B

DOI

2017

自支撑衬底n-GaN肖特基接触的电流输运机制研究

牟文杰，赵琳娜，翟阳，朱培敏，陈雷雷，闫大为，顾晓峰

《固体电子学研究与进展》

2017

温和氢气等离子体对薄层二硫化钼的影响研究

张学成，肖少庆，南海燕，张秀梅，闫大为，顾晓峰

《人工晶体学报》

2017

图形化蓝宝石衬底掺杂渐变GaN肖特基型紫外探测器

翟阳，牟文杰，闫大为，杨国锋，蒋敏峰，肖少庆，顾晓峰

《固体电子学研究与进展》

2017

Tunneling-Hopping Transport Model for Reverse Leakage Current in InGaN/GaN Blue Light-Emitting Diodes

Linna Zhao, Leilei Chen, Guohao Yu, Dawei Yan, Guofeng Yang, Xiaofeng Gu, Bin Liu, Hai Lu

IEEE Photonics Technology Letters

DOI

2017

GaN-based Schottky barrier ultraviolet photodetectors with graded doping on patterned sapphire substrates

Wenjie Mou, Linna Zhao, Leilei Chen, Dawei Yan, Huarong Ma, Guofeng Yang, Xiaofeng Gu

Solid-State Electronics

DOI

2017

A Comprehensive Study of Reverse Current Degradation Mechanisms in Au/Ni/n-GaN Schottky Diodes

Jian Ren, Wenjie Mou, Linna Zhao, Dawei Yan, Zhiguo Yu, Guofeng Yang, Shaoqing Xiao, Xiaofeng Gu

IEEE Transactions on Electron Devices

DOI

2016

原子层沉积Al2O3/n-GaN结构的深能级界面态研究

黄宇，牟文杰，闫大为，杨国峰，肖少庆，顾晓峰

《固体电子学研究与进展》

2016

组份渐变电子阻挡层对InGaN/GaN LED光电特性的影响

管婕，翟阳，闫大为，罗俊，肖少庆，顾晓峰

《微电子学》

2015

集成电路设计类课程的改革探索

赵琳娜，虞致国，梁海莲，闫大为

《无锡职业技术学院学报》

2015

图形化衬底对GaN基LED电流与发光特性的影响

李丽莎，闫大为，管婕，杨国锋，王福学，肖少庆，顾晓峰

《固体电子学研究与进展》

2015

Comparison of electrical characteristics between AlGaN/GaN and lattice-matched InAlN/GaN heterostructure Schottky barrier diodes

Jian Ren, Dawei Yan, Zhai Yang, Wenjie Mou, Xiaofeng Gu

Microelectronics Reliability

DOI

2015

Hot electrons induced degradation in lattice-matched InAlN/GaN high electron mobility transistors

Jian Ren, Dawei Yan, Wenjie Mou, Zhai Yang, Guofeng Yang, Xiaofeng Gu

Microelectronics Reliability

DOI

2015

Surface Acceptor-Like Trap Model for Gate Leakage Current Degradation in Lattice-Matched InAlN/GaN HEMTs

Dawei Yan, Jian Ren, Guofeng Yang, Shaoqing Xiao, Xiaofeng Gu, Hai Lu

IEEE Electron Device Letters

DOI

2015

Current transport mechanisms in lattice-matched Pt/Au-InAlN/GaN Schottky diodes

Jian Ren, Dawei Yan, Guofeng Yang, Fuxue Wang, Shaoqing Xiao, Xiaofeng Gu

Journal of Applied Physics

DOI

2015

Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by tailoring polarization in electron blocking layer

Guofeng Yang, Jianjun Chang, Jin Wang, Qing Zhang, Feng Xie, Junjun Xue, Dawei Yan, Fuxue Wang, Peng Chen, Rong Zhang, Yi Zheng

Superlattices and Microstructures

DOI

2015

Investigation of light output performance for gallium nitride-based light-emitting diodes grown on different shapes of patterned sapphire substrate

Guofeng Yang, Jianjun Chang, Jianli Zhao, Y.Y. Tong, Feng Xie, Jin Wang, Qing Zhang, Hongjuan Huang, Dawei Yan

Materials Science in Semiconductor Processing

DOI

2014

氮化镓基高电子迁移率晶体管栅电流输运机制研究

焦晋平，任舰，闫大为，顾晓峰

《固体电子学研究与进展》

2014

四足棒球棒状ZnO纳/微米材料的制备及其生长机理的研究

王福学，蔡小龙，闫大为，肖少庆，顾晓峰

《人工晶体学报》

2014

天线状ZnO纳米结构的光致发光特性及其生长机理

蔡小龙，王福学，闫大为，顾晓峰

《化工新型材料》

2014

Synthesis and luminescence characteristics of ZnO nanotubes

Fuxue Wang, Xiaolong Cai, Dawei Yan, Zhaomin Zhu, Shaoqing Xiao, Xiaofeng Gu

Journal of Semiconductors

DOI

2014

Luminescence properties of tetrapod ZnO nanostructures

Fuxue Wang, Xiaolong Cai, Dawei Yan, Zhaomin Zhu, Xiaofeng Gu

Journal of Semiconductors

DOI

2014

Electron-leakage-related low-temperature light emission efficiency behavior in GaN-based blue light-emitting diodes

Dawei Yan, Lisha Li, Jian Ren, Fuxue Wang, Guofeng Yang, Shaoqing Xiao, Xiaofeng Gu

Journal of Semiconductors

DOI

2014

回力标形状的ZnO纳米棒的制备和光致发光特性(英文)

王福学，蔡小龙，闫大为，朱兆旻，顾晓峰

《固体电子学研究与进展》

2014

GaN-based p–i–n ultraviolet photodetectors with a thin p-type GaN layer on patterned sapphire substrates

Hongjuan Huang Hongjuan Huang, Dawei Yan, Guosheng Wang Guosheng Wang, Feng Xie, Guofeng Yang, Shaoqing Xiao, Xiaofeng Gu

Chinese Optics Letters

DOI

2014

校企合作提高本科教育质量的探索——以微电子学科为例

王福学，虞致国，肖少庆，闫大为

《无锡职业技术学院学报》

2014

Formation of nanorod InGaN/GaN multiple quantum wells using nickel nano-masks and dry etching for InGaN-based light-emitting diodes

Guofeng Yang, Feng Xie, Y.Y. Tong, Pengcheng Chen, Zhiguo Yu, Dawei Yan, J.J. Xue, H.X. Zhu, Ying Guo, G.H. Li, Sichen Gao

Materials Science in Semiconductor Processing

DOI

2014

Current and light emission efficiency behaviors in GaN-based LEDS

Li Li-Sha, Jie Guan, Dawei Yan, Guofeng Yang, Shaoqing Xiao, Xiaofeng Gu

IEEE International Conference on Solid-State and Integrated Circuit Technology

DOI

2014

Design analysis of polarization-doped N-face InGaN/GaN light-emitting diodes with different AlxGa1−xN graded layers

Guofeng Yang, Y.Y. Tong, Feng Xie, Dawei Yan, Fangzhou Wang

Materials Science in Semiconductor Processing

DOI

2014

Design analysis of back-illuminated separated absorption and multiplication AlGaN APDs with polarization field

Guofeng Yang, Feng Xie, Junjun Xue, Dawei Yan, F. X. Wang

Optical and Quantum Electronics

DOI

2014

Reverse leakage current in AlGaN-based ultraviolet light-emitting diodes

Rong Jiang, Dawei Yan, Hai Lu, Rong Zhang, Dunjun Chen, Yi Zheng

Chinese Science Bulletin

DOI

2013

Temperature-dependent efficiency droop behaviors of GaN-based green light-emitting diodes

Rong Jiang, Hai Lu, Dunjun Chen, Fangfang Ren, Dawei Yan, Rong Zhang, Yi Zheng

Chinese Physics B

DOI

2013

具有物联网特色的微电子专业人才培养机制探索

闫大为，彭勇，朱兆旻，梁海莲，赵琳娜

《无锡职业技术学院学报》

2013

Capacitance and conductance dispersion in AlGaN/GaN heterostructure

Dawei Yan, Fuxue Wang, Zhaomin Zhu, Jianmin Cheng, Xiaofeng Gu

Journal of Semiconductors

DOI

2013

Forward current transport mechanisms in Ni/Au-AlGaN/GaN Schottky diodes

Dawei Yan, Jinping Jiao, Jian Ren, Guofeng Yang, Xiaofeng Gu

Journal of Applied Physics

DOI

2013

Characteristics of N-Face InGaN Light-Emitting Diodes With p-Type InGaN/GaN Superlattice

Guofeng Yang, Guohua Li, Shumei Gao, Dawei Yan, Fuxue Wang

IEEE Photonics Technology Letters

DOI

2013

Theoretical study of N-face InGaN light-emitting diodes with GaN–InGaN–GaN barrier near p-side and n-side

Guofeng Yang, Kexiu Dong, H.X. Zhu, Ying Guo, Dawei Yan, Fangzhou Wang, G.H. Li, Sichen Gao

Superlattices and Microstructures

DOI

2013

Fabrication of nanorod InGaN/GaN multiple quantum wells with self-assembled Ni nano-island masks

Guofeng Yang, Ying Guo, Huaxin Zhu, Dawei Yan, Guohua Li, Shumei Gao, Kexiu Dong

Applied Surface Science

DOI

2013

Analysis of Forward Tunnelling Current in GaN-based Blue LEDs

Jian Ren, Lisha Li, Dawei Yan, Xiaofeng Gu

International Conference on Computer Science and Electronics Engineering (ICCSEE)

DOI

2012

Distribution of deep-level traps at atomic-layer-deposited Al2O3/n-GaN interface

Dawei Yan, Hai Lu, Dunjun Chen, Rong Zhang, Yi Zheng, Qian Xu, Aidong Li

Solid-State Electronics

DOI

2011

宽禁带Ⅲ族氮化物半导体器件输运与界面特性研究

闫大为

《南京大学》

精选作品

期刊论文

高温栅压应力对SiC MOSFET电学特性的影响

p-GaN HEMTs正向栅极电容与电流特性研究

氢离子注入GaN高电子迁移率晶体管栅极正向输运、退化与击穿

GaN基LED正向输运与低频噪声特性

Vertical GaN Schottky Barrier Diode Based on Anode-First Process and Low-Temperature Ohmic Contact

S-Carboxymethyl-L-Cysteine-Functionalized AlGaN/GaN High-Electron-Mobility Transistor for Cd 2+ Detection

基于锁相红外技术的SiC MOSFET热分布与“热点”定位研究

GaN芯片封装技术研究进展与趋势

基于4H-SiC的p-i-n型紫外光探测器的光电特性研究

36.4 THz · V f T × BV figure-of-merit GaN HEMT with source field plate and SiN x passivation

Noise suppression and enhanced energy resolution in NiO/β-Ga2O3 radiation detectors

Degradation Mechanisms of AlGaN/GaN High Electron Mobility Transistors Induced by High-Energy Electron Irradiation

Multi-modal thermography-calibrated barrier in vertical β-Ga2O3 Schottky barrier diodes

一种p-GaN HEMTs栅电荷表征方法

GaN P沟道功率器件及集成电路研究进展

ZnO/Spiro-MeOTAD异质结自驱动光电探测器的制备及性能（特邀）

Forward leakage currents in GaN p-i-n diodes

Non-Intrusive and Precise Electric Field Sensing of High-Field Electron Devices by Franz-Keldysh Effect

P-I-N型GaN紫外探测器的正向电流输运

GaN基HEMT失效热点行为研究

氮化镓基LED结温测量方法研究

高功率条件下MOSFET栅电荷特性的测量方法

Transport and Breakdown Mechanisms of Gate Leakage Current in Lattice-Matched In₀.₁₇Al₀.₈₃N/GaN HEMTs

GaN p-i-n ultraviolet photodetectors grown on homogenous GaN bulk substrates

基于动态参考的超低功耗动态PWM比较电路

High-densities of free holes in homoepitaxial n-GaN induced by fluorine-plasma ion implantation

Accurate determination of the peak channel temperature by an electrical method combined with EL mapping technique in In0.17Al0.83N/GaN HEMTs

Temperature dependent characteristics of Ti/Al/Ni/Au Ohmic contact on lattice-matched In0.17Al0.83N/GaN heterostructures

Enhanced Energy Resolution of GaN-on-Sapphire p-i-n Alpha-Particle Detector With Isoelectronic Al-Doped i-GaN Layer

晶格匹配InAlN/GaN HEMTs栅极电流击穿行为研究

晶格匹配InAlN/GaN HEMT沟道温度评估方法研究

GaN高压LED在极小电流与极低温度下的光电特性

Design of a cascade-MOS-triggered SCR with high holding-voltage for high-voltage ESD protection

Charge Transport in Vertical GaN Schottky Barrier Diodes: A Refined Physical Model for Conductive Dislocations

氮化镓基高电子迁移率晶体管Kink效应研究

氟等离子体离子注入Au/Ni/n-GaN二极管特性研究

GaN基肖特基势垒二极管的漏电流传输与退化机制

Analysis of High-Temperature Carrier Transport Mechanisms for High Al-Content Al0.6Ga0.4N MSM Photodetectors

Temperature-Dependent Efficiency Droop in GaN-Based Blue LEDs

Progressive current degradation and breakdown behavior in GaN LEDs under high reverse bias stress

自支撑衬底n-GaN肖特基接触的电流输运机制研究

温和氢气等离子体对薄层二硫化钼的影响研究

图形化蓝宝石衬底掺杂渐变GaN肖特基型紫外探测器

Tunneling-Hopping Transport Model for Reverse Leakage Current in InGaN/GaN Blue Light-Emitting Diodes

GaN-based Schottky barrier ultraviolet photodetectors with graded doping on patterned sapphire substrates

A Comprehensive Study of Reverse Current Degradation Mechanisms in Au/Ni/n-GaN Schottky Diodes

原子层沉积Al2O3/n-GaN结构的深能级界面态研究

组份渐变电子阻挡层对InGaN/GaN LED光电特性的影响

集成电路设计类课程的改革探索

图形化衬底对GaN基LED电流与发光特性的影响

Comparison of electrical characteristics between AlGaN/GaN and lattice-matched InAlN/GaN heterostructure Schottky barrier diodes

Hot electrons induced degradation in lattice-matched InAlN/GaN high electron mobility transistors

Surface Acceptor-Like Trap Model for Gate Leakage Current Degradation in Lattice-Matched InAlN/GaN HEMTs

Current transport mechanisms in lattice-matched Pt/Au-InAlN/GaN Schottky diodes

Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by tailoring polarization in electron blocking layer

Investigation of light output performance for gallium nitride-based light-emitting diodes grown on different shapes of patterned sapphire substrate

氮化镓基高电子迁移率晶体管栅电流输运机制研究

四足棒球棒状ZnO纳/微米材料的制备及其生长机理的研究

天线状ZnO纳米结构的光致发光特性及其生长机理

Synthesis and luminescence characteristics of ZnO nanotubes

Luminescence properties of tetrapod ZnO nanostructures

Electron-leakage-related low-temperature light emission efficiency behavior in GaN-based blue light-emitting diodes

回力标形状的ZnO纳米棒的制备和光致发光特性(英文)

GaN-based p–i–n ultraviolet photodetectors with a thin p-type GaN layer on patterned sapphire substrates

校企合作提高本科教育质量的探索——以微电子学科为例

Formation of nanorod InGaN/GaN multiple quantum wells using nickel nano-masks and dry etching for InGaN-based light-emitting diodes

Current and light emission efficiency behaviors in GaN-based LEDS

Design analysis of polarization-doped N-face InGaN/GaN light-emitting diodes with different AlxGa1−xN graded layers

Design analysis of back-illuminated separated absorption and multiplication AlGaN APDs with polarization field

Reverse leakage current in AlGaN-based ultraviolet light-emitting diodes

Temperature-dependent efficiency droop behaviors of GaN-based green light-emitting diodes

具有物联网特色的微电子专业人才培养机制探索

Capacitance and conductance dispersion in AlGaN/GaN heterostructure

Forward current transport mechanisms in Ni/Au-AlGaN/GaN Schottky diodes

Characteristics of N-Face InGaN Light-Emitting Diodes With p-Type InGaN/GaN Superlattice

Theoretical study of N-face InGaN light-emitting diodes with GaN–InGaN–GaN barrier near p-side and n-side

Fabrication of nanorod InGaN/GaN multiple quantum wells with self-assembled Ni nano-island masks

Analysis of Forward Tunnelling Current in GaN-based Blue LEDs