张召富

2026

离子辐照下本征GaN晶格热导率退化的分子动力学研究

《电子与封装》

2026

Systematic Study of Fermi‐Level Pinning at Crystalline Metal/GaN Interfaces: First‐Principles Calculations and Diode Characterization

Rare Metals

DOI

2026

Impact of fluorine plasma and electrothermal annealing on the interfacial properties at Ni/ β -Ga 2 O 3 Schottky contacts

Journal of Semiconductors

DOI

2026

升温载荷下玻璃通孔异质界面热机械可靠性评估及寿命预测

《电子与封装》

DOI

2026

半导体制造及封装中的翘曲测量方法与应用进展

《电子测量与仪器学报》

2026

Defects in Cu-filled through-silicon vias (TSV) after thermal cycling

2026 International Conference on Electronics Packaging and Hybrid Bonding Symposium (ICEP-HBS)

DOI

2026

First-principles calculations of screw dislocations in β-Ga2O3

Journal of Physics D: Applied Physics

DOI

2026

A numerical simulation of thermal field optimization and stress distribution in β-Ga2O3 single crystals grown by the vertical Bridgman method

Semiconductor Science and Technology

DOI

2026

Machine learning assisted multiphysics simulation for electroplating copper in high aspect ratio through silicon via

Electrochimica Acta

DOI

2026

Warpage Bifurcation Behavior of SiC and Si Interposer Wafers: A Thermo-Mechanical Analysis via RVE Modeling

International Conference on Electronic Packaging Technology (ICEPT)

DOI

2026

Structural Design of GaN MIS-HEMTs for Low-Earth-Orbit Radiation Hardness: Integrating Back-Barrier and Deep Source Via

IEEE Transactions on Electron Devices

DOI

2026

Decoupling the Competing Degradation Mechanisms in SiC MOSFETs Under Repetitive Avalanche: From Charge Trapping to Package Fatigue

IEEE Transactions on Electron Devices

DOI

2026

Direct identification of V N -H defects in p -GaN under electrical bias and elevated temperature

Physical review. B./Physical review. B

DOI

2026

Moisture-Accelerated Gate-Oxide Failure in 1200-V SiC MOSFETs Under Repetitive Avalanche Stress

IEEE Journal of Emerging and Selected Topics in Power Electronics

DOI

2026

Theoretical insights into β-Ga2O3/diamond heterojunction interfaces: Surface selection, band alignment, and interfacial interaction

Applied Physics Letters

DOI

2026

Machine Learning-Assisted Numerical Investigation on Multiphysics Coupling for Copper Electroplating in High-Aspect-Ratio Through-Glass Vias

International Conference on Electronic Packaging Technology (ICEPT)

DOI

2026

Achieving Fermi-Level Depinning and Ideal Metal Contact in β -Ga 2 O 3 Devices via MXene Integration

Nano Letters

DOI

2026

Revealing the fracture mechanism and electrical properties of the metal/α-Al2O3 interfaces: High-throughput-assisted first-principles calculations

Journal of Material Science and Technology

DOI

2026

Tuning the band offsets and Schottky barrier heights in diamond devices through termination modulation

Journal of Material Science and Technology

DOI

2026

Electronic, Dielectric, and Optical Properties of High- κ Oxides and Their Interfaces with Silicon

The Journal of Physical Chemistry C

DOI

2026

Systematic investigation of temperature dependences of elastic constants of heavily doped silicon via machine learning-based molecular dynamics

Computational Materials Science

DOI

2026

Atomic Insights of Irradiation-Induced Thermal Conductivity Degradation in β-Ga 2 O 3

The Journal of Physical Chemistry Letters

DOI

2026

Explainable Analysis and Optimization of the Thermal Field in Gallium Oxide Single Crystal Growth Based on Machine Learning

Crystal Growth & Design

DOI

2026

Modeling and Simulation of Thermal Stress in Deep Trench Capacitors Based on Three-Dimensional Elasticity and Shell Theory

IEEE Transactions on Components Packaging and Manufacturing Technology

DOI

2025

采用不同辐射传热模型模拟氧化镓单晶生长热场的对比研究

《人工晶体学报》

2025

宽禁带半导体辐照损伤理论研究方法与挑战

《武汉大学学报(理学版)》

DOI

2025

基于试验与仿真的CBGA焊点寿命预测技术

《电子与封装》

DOI

2025

2024年数值仿真计算与多物理场协同研究热点回眸

《科技导报》

2025

基于工艺相关建模方法的三维结构快闪存储器残余应力不对称性分析及缓解策略

《电子与信息学报》

2025

Orientation-dependent surface radiation damage in β-Ga2O3 explored by atomistic simulations

Acta Materialia

DOI

2025

Physics-knowledge-integrated neural network for quantum transport prediction of field-effect transistors

Physical Review Applied

DOI

2025

Orientation engineering of β-Ga2O3 single crystals: Anisotropy evolution in edge-defined film-fed growth systems

Journal of Materials Science & Technology

DOI

2025

Laser stealth dicing of β-Ga2O3: Theoretical and experimental studies

Journal of Materials Science & Technology

DOI

2025

Load-Independent Junction Temperature Estimation via Combined TSEPs Modeling for SiC MOSFETs

IEEE transactions on power electronics

DOI

2025

Investigation of Bottom-Up Electrodeposition Filling for Nanoscale Through-Silicon Vias (TSVs)

Electrochimica Acta

DOI

2025

Multiphysical field full‐process simulation of gallium oxide with EFG approach

Journal of The American Ceramic Society

DOI

2025

Defect evolution in gallium oxide during stretching process: A molecular dynamics simulation

Materials Science in Semiconductor Processing

DOI

2025

Oxygen-Assisted B–N Codoping Enables Shallow BN2 Donors for n-Type Diamond

Research

DOI

2025

Polarization-engineered electron transport in β -Ga2O3/SiC heterojunctions: Atomic-scale modulation via SiC polymorphic selection

Applied Physics Letters

DOI

2025

Band Alignment Engineering in β-Ga2O3/4H-SiC Polar Heterojunctions via Orientation Selection: Interfacial Band Edge States and Hole Trapping

The Journal of Physical Chemistry Letters

DOI

2025

Theoretical Study on the Interface and Transport Properties of Ti₃AuC₂ MAX Phase/4H-SiC Heterostructures for High-Temperature Power Device Applications

IEEE Transactions on Electron Devices

DOI

2025

Theoretical insights into the interface performance of Ga2O3/ZnO heterostructure photodetectors driven by polarization and strains

Computational Materials Science

DOI

2025

Metal contacts and Schottky barriers at β-Ga2O3 interfaces: High-throughput-assisted first-principles calculations

Journal of Applied Physics

DOI

2025

Uncovering enhanced ferroelectricity: Substituent-driven design of wurtzite ZnO materials

Applied Physics Letters

DOI

2025

Ferroelectric Ga 2 O 3 ‐Enabled High‐Density Spintronic Memory via Nonrelativistic Spin Splitting

Advanced Functional Materials

DOI

2025

Structural and electronic properties of hydrogen-terminated diamond field-effect transistors with h-BN gate dielectric featuring native point defects

Applied Physics Letters

DOI

2025

Determining the band alignment at the (010)-oriented β - ( Al x Ga 1 − x ) 2 O 3 / Ga 2 O 3 interface using hard x-ray photoemission spectroscopy and ab initio calculations

Physical Review Applied

DOI

2025

First-Principles Study of Oxygen Vacancy Defects in Amorphous HfO2/Si Interfaces

The Journal of Physical Chemistry C

DOI

2025

Intralevel Optical Transitions of XV (XV = BV, SiV, and NV) Centers in Fluorinated Diamane

Nano Letters

DOI

2025

Radiation resistance and defect evolution in bulk β -Ga 2 O 3 : a molecular dynamics study

Journal of Physics D Applied Physics

DOI

2024

背栅效应下氮化镓功率器件中的载流子缺陷能级与结构研究

《武汉大学学报(理学版)》

2024

The impact of sidewall copper grain condition on thermo-mechanical behaviors of TSVs during the annealing process

Microsystems & Nanoengineering

DOI

2024

Signal integrity and heat transfer performance of through-boron nitride via

Microelectronics and reliability

DOI

2024

Theoretical insights into the interface engineering of β-Ga2O3 devices with ferroelectric HfO2 gate dielectric: Impact of polarization direction

Surfaces and Interfaces

DOI

2024

Presence of High Density Positive Fixed Charges at ALD–Al2O3/GaN (cap) Interface for Efficient Recovery of 2‐DEG in Ultrathin‐Barrier AlGaN/GaN Heterostructure

physica status solidi (b)

DOI

2024

First‐Principles Study of Schottky Barrier Heights on Metal/4H‐SiC Polar Interfaces

physica status solidi (b)

DOI

2024

Structural design and electronic performance at MO /diamond (M = Hf, Zr, Ti, Al, Sc, Y) interfaces for MOS device applications

Applied Surface Science

DOI

2024

Insight into the nitrogen-vacancy center formation in type-Ib diamond by irradiation and annealing approach

Materials Futures

DOI

2024

Atomic and electronic properties of the metal/diamond (100) interfaces by first-principles calculations

Surfaces and Interfaces

DOI

2024

Origin of two-dimensional hole gas at the hydrogen-terminated diamond surfaces: Negative interface valence-induced upward band bending

Journal of Material Science and Technology

DOI

2024

Interface engineering of multilayer cubic boron nitride terminated diamond (111): Rational regulation of Au/diamond Schottky barriers for ambipolar applications

Diamond and Related Materials

DOI

2023

Mechanism of Threshold Voltage Instability in SiC MOSFETs and Impacts on Dynamic Switching

International Symposium on Power Semiconductor Devices and IC's

DOI

2023

Modulating electronic properties of β-Ga2O3 by strain engineering

Results in Physics

DOI

2023

Theoretical Insights into the Two-Dimensional Gallium Oxide Monolayer for Adsorption and Gas Sensing of C4F7N Decomposition Products

Journal of Materials Chemistry C

DOI

2023

Theoretical predictions of the structural stability and property contrast for Sb-rich Ge3Sb6Te5 phase-change materials

Applied Physics Letters

DOI

2023

Quantum transport of sub-5 nm InSe and In2SSe monolayers and their heterostructure transistors.

Nanoscale

DOI

2023

High-Throughput Screening of Gas Sensor Materials for Decomposition Products of Eco-Friendly Insulation Medium by Machine Learning.

ACS Sensors

DOI

2023

Density functional analysis of oxide dipole layer voltage shifts in high κ/metal gate stacks

Journal of Applied Physics

DOI

2023

Deep-learning-assisted theoretical insights into the compatibility of environment friendly insulation medium with metal surface of power equipment.

Journal of Colloid and Interface Science

DOI

2023

Contact Resistances to n- and p-type 2D Semiconductors MoS2 and WSe2 with Moire Lattice Interfaces

2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT)

DOI

2023

High-Accuracy Machine-Learned Interatomic Potentials for the Phase Change Material Ge3Sb6Te5

Chemistry of Materials

DOI

2023

Ab-initio study of Schottky barrier heights at metal-diamond (1 1 1) interfaces

Applications of Surface Science

DOI

2023

High-Accuracy Neural Network Interatomic Potential for Silicon Nitride

Nanomaterials

DOI

2023

Revisiting the electronic and optical properties of SiO2 polymorphs by hybrid functional calculations

Journal of Applied Physics

DOI

2023

Metal contacts and Schottky barrier heights at boron arsenide interfaces: A first-principles study

Journal of Applied Physics

DOI

2023

Machine Learning Paves the Way for High Entropy Compounds Exploration: Challenges, Progress, and Outlook

Advanced Materials

DOI

2022

Computational study of transition metal dichalcogenide cold source MOSFETs with sub-60 mV per decade and negative differential resistance effect

npj 2D Materials and Applications

DOI

2022

Two-dimensional ferroelectric MoS2/Ga2O3 heterogeneous bilayers with highly tunable photocatalytic and electrical properties.

Nanoscale

DOI

2022

Editorial: Design of two-dimensional functional materials and nanodevices

Frontiers in Materials

DOI

2022

Metal contacts with Moire interfaces on WSe2 for ambipolar applications

Applied Physics Letters

DOI

2022

Point Defect Stability and Dielectric Properties of Graphene-Like Monolayer Materials

Chemistry of Materials

DOI

2022

p-Type Semiconduction in Oxides with Cation Lone Pairs

Chemistry of Materials

DOI

2022

Electronic properties of CaF2 bulk and interfaces

Journal of Applied Physics

DOI

2022

Reduced Fermi Level Pinning at Physisorptive Sites of Moire-MoS2/Metal Schottky Barriers

ACS Applied Materials and Interfaces

DOI

2022

Negative Differential Resistance Effect in “Cold” Metal Heterostructure Diodes

IEEE Electron Device Letters

DOI

2022

Theoretical study of the interface engineering for H-diamond field effect transistors with h-BN gate dielectric and graphite gate

Applied Physics Letters

DOI

2021

Two-Dimensional Ferroelectric Ga2O3 Bilayers with Unusual Strain-Engineered Interlayer Interactions

Chemistry of Materials

DOI

2021

Mobility Reduction by Carbon Cluster Defects in SiC MOSFETS

Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials

DOI

2021

Defects and Passivation Mechanism of the Suboxide Layers at SiO₂/4H-SiC (0001) Interface: A First-Principles Calculation

IEEE Transactions on Electron Devices

DOI

2021

Carbon cluster formation and mobility degradation in 4H-SiC MOSFETs

DOI

2021

Mobility Degradation in 4H-SiC MOSFETs and Interfacial Formation of Carbon Clusters

DOI

2021

Impact of carbon–carbon defects at the SiO2/4H-SiC (0001) interface: a first-principles calculation

Journal of Physics D: Applied Physics

DOI

2021

Tellurium Nanowire Gate-All-Around MOSFETs for Sub-5 nm Applications.

ACS Applied Materials and Interfaces

DOI

2021

Doping limits in p-type oxide semiconductors

MRS bulletin

DOI

2021

Machine‐learning‐based interatomic potentials for advanced manufacturing

International Journal of Mechanical System Dynamics

DOI

2021

Tunable contacts and device performances in graphene/group-III monochalcogenides MX (M = In, Ga; X = S, Se) van der Waals heterostructures

Journal of Applied Physics

DOI

2021

Electronic properties and tunability of the hexagonal SiGe alloys

DOI

2021

A density-functional-theory-based and machine-learning-accelerated hybrid method for intricate system catalysis

Materials Reports: Energy

DOI

2021

Two-Dimensional Gallium Oxide Monolayer for Gas-Sensing Application.

Journal of Physical Chemistry Letters

DOI

2021

Prediction of P-type conductivity in SnTa2O6

Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials

DOI

2021

High‐Throughput Electronic Structures and Ferroelectric Interfaces of HfO2 by GGA+U(d,p) Calculations

Physica Status Solidi (a)

DOI

2020

Electronic structure of amorphous copper iodide: A p -type transparent semiconductor

DOI

2020

Investigation of SiNx and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges

IEEE Journal of the Electron Devices Society

DOI

2020

Tunable Properties of Novel Ga2O3 Monolayer for Electronics and Optoelectronics Applications.

ACS Applied Materials and Interfaces

DOI

2020

Tuning the high-κ oxide (HfO2, ZrO2)/4H-SiC interface properties with a SiO2 interlayer for power device applications

DOI

2020

Extrapolated Defect Transition Level in Two-dimensional Materials: The Case of Charged Native Point Defects in Monolayer Hexagonal Boron Nitride.

ACS Applied Materials and Interfaces

DOI

2020

Strain-tunable III-nitride/ZnO heterostructures for photocatalytic water-splitting: A hybrid functional calculation

APL Materials

DOI

2020

Phase dependence of Schottky barrier heights for Ge–Sb–Te and related phase-change materials

Journal of Applied Physics

DOI

2020

Extending the metal-induced gap state model of Schottky barriers

Journal of Vacuum Science & Technology B

DOI

2020

Below bandgap photoluminescence of an AlN crystal: Co-existence of two different charging states of a defect center

DOI

2020

Termination-dependence of Fermi level pinning at rare-earth arsenide/GaAs interfaces

Applied Physics Letters

DOI

2020

Origin of Weaker Fermi Level Pinning and Localized Interface States at Metal Silicide Schottky Barriers

Journal of Physical Chemistry C

DOI

2020

The Anisotropic Transport Property of Antimonene MOSFETs.

ACS Applied Materials and Interfaces

DOI

2020

Role of the third metal oxide in In–Ga–Zn–O4 amorphous oxide semiconductors: Alternatives to gallium

DOI

2020

Thermal transport properties of novel two-dimensional CSe.

Physical Chemistry, Chemical Physics - PCCP

DOI

2020

Electronic Structure of Amorphous CuI, a p-type Transparent Semiconductor

Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials

DOI

2020

Hybrid band offset calculation for heterojunction interfaces between disparate semiconductors

Applied Physics Letters

DOI

2019

空位及氮掺杂二维ZnO单层材料性质:第一性原理计算与分子轨道分析

《物理学报》

2019

Atomic-scale identification of crystalline GaON nanophase for enhanced GaN MIS-FET channel

Applied Physics Letters

DOI

2019

Chemical bonding and band alignment at X2O3/GaN (X = Al, Sc) interfaces

Applied Physics Letters

DOI

2019

Reverse-Conducting Normally-OFF Double-Channel AlGaN/GaN Power Transistor With Interdigital Built-in Schottky Barrier Diode

IEEE Transactions on Electron Devices

DOI

2019

Impact of carrier injections on the threshold voltage in p-GaN gate AlGaN/GaN power HEMTs

Applied Physics Express

DOI

2019

Charge-Modulated Schottky Barrier Lowering Effect in GaN Double-Channel Lateral Power SBDs with Gated Anode

International Symposium on Power Semiconductor Devices and IC's

DOI

2019

Identifying the Location of Hole-Induced Gate Degradation in $\text{LPCVD} -\text{SiN}_{x}/\text{GaN}$ MIS-FETs under High Reverse-Bias Stress

International Symposium on Power Semiconductor Devices and IC's

DOI

2019

Enhanced Gate Reliability in GaN MIS-FETs by Converting the GaN Channel into Crystalline Gallium Oxynitride

ACS Applied Electronic Materials

DOI

2019

Effects of Substrate Termination on Reverse-bias Stress Reliability of Normally-off Lateral GaN-on-Si MIS-FETs

International Symposium on Power Semiconductor Devices and IC's

DOI

2019

Atomic structure and band alignment at Al2O3/GaN, Sc2O3/GaN and La2O3/GaN interfaces: A first-principles study

Microelectronic Engineering

DOI

2019

Tunable Electronic Properties of Graphene/g-AlN Heterostructure: The Effect of Vacancy and Strain Engineering

Nanomaterials

DOI

2019

2D materials as semiconducting gate for field-effect transistors with inherent over-voltage protection and boosted ON-current

npj 2D Materials and Applications

DOI

2019

Properties of vacancies and N-doping in monolayer g-ZnO: First-principles calculation and molecular orbital theory analysis

Acta Physica Sinica

DOI

2019

Band alignment calculation of dielectric films on VO2

Microelectronic Engineering

DOI

2019

Schottky barrier height at metal/ZnO interface: A first-principles study

Microelectronic Engineering

DOI

2018

Interface Engineering of Monolayer MoS2/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation Treatment.

ACS Applied Materials and Interfaces

DOI

2018

Reverse-Blocking Normally-OFF GaN Double-Channel MOS-HEMT With Low Reverse Leakage Current and Low ON-State Resistance

IEEE Electron Device Letters

DOI

2018

Hole-Induced Threshold Voltage Shift Under Reverse-Bias Stress in E-Mode GaN MIS-FET

IEEE Transactions on Electron Devices

DOI

2018

Performance and VTH Stability in E-Mode GaN Fully Recessed MIS-FETs and Partially Recessed MIS-HEMTs With LPCVD-SiNx/PECVD-SiNx Gate Dielectric Stack

IEEE Transactions on Electron Devices

DOI

2018

Dependence of ${V}_{\text {TH}}$ Stability on Gate-Bias Under Reverse-Bias Stress in E-mode GaN MIS-FET

IEEE Electron Device Letters

DOI

2018

High-speed, high-reliability GaN power device with integrated gate driver

International Symposium on Power Semiconductor Devices and IC's

DOI

2018

Photon emission and current-collapse suppression of AlGaN/GaN field-effect transistors with photonic–ohmic drain at high temperatures

Applied Physics Express

DOI

2018

Suppressed Hole-Induced Degradation in E-mode GaN MIS-FETs with Crystalline $\text{GaO}_{\mathrm{x}}\mathrm{N}_{1-\mathrm{x}}$ Channel

International Electron Devices Meeting

DOI

2018

Bias Temperature Instability of Normally‐Off GaN MIS‐FET with Low‐Pressure Chemical Vapor Deposition SiNx Gate Dielectric

DOI

2018

Ab initio study of impact of nitridation at amorphous-SiNx/GaN interface

Applied Physics Express

DOI

2018

Layer-dependent second-order Raman intensity of Mo S 2 and WS e 2 : Influence of intervalley scattering

DOI

2018

In Situ Resonant Raman Spectroscopy to Monitor the Surface Functionalization of MoS2 and WSe2 for High-k Integration: A First-Principles Study.

Langmuir

DOI

2018

650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode

IEEE Electron Device Letters

DOI

2017

Normally-Off LPCVD-SiNx/GaN MIS-FET With Crystalline Oxidation Interlayer

IEEE Electron Device Letters

DOI

2017

An interdigitated GaN MIS-HEMT/SBD normally-off power switching device with low ON-resistance and low reverse conduction loss

International Electron Devices Meeting

DOI

2017

Revealing the Nitridation Effects on GaN Surface by First-Principles Calculation and X-Ray/Ultraviolet Photoemission Spectroscopy

IEEE Transactions on Electron Devices

DOI

2017

Impact of substrate termination on dynamic performance of GaN-on-Si lateral power devices

International Symposium on Power Semiconductor Devices and IC's

DOI

2017

Dynamic $R_{\mathrm {ON}}$ of GaN-on-Si Lateral Power Devices With a Floating Substrate Termination

IEEE Electron Device Letters

DOI

2017

Reverse-bias stability and reliability of hole-barrier-free E-mode LPCVD-SiNx/GaN MIS-FETs

International Electron Devices Meeting

DOI

2017

High-performance fully-recessed enhancement-mode GaN MIS-FETs with crystalline oxide interlayer

International Symposium on Power Semiconductor Devices and IC's

DOI

2017

Gate-Recessed Normally-OFF GaN MOSHEMT With Improved Channel Mobility and Dynamic Performance Using AlN/Si3N4 as Passivation and Post Gate-Recess Channel Protection Layers

IEEE Electron Device Letters

DOI

2017

PBTI and NBTI of Fully-recessed E-mode LPCVD-SiNx/GaN MIS-FETs with PECVD-SiNx Interfacial Protection Layer

2017

Remote N2 plasma treatment to deposit ultrathin high-k dielectric as tunneling contact layer for single-layer MoS2 MOSFET

Applied Physics Express

DOI

2017

Enhanced dielectric deposition on single-layer MoS2 with low damage using remote N2 plasma treatment

Nanotechnology

DOI

2017

Low-Resistance Contact to Single-Layer MoS 2 by Depositing Ultrathin High-k Dielectric with Remote N 2 Plasma Treatment as Tunneling Layer

DOI

2017

TDDB and PBTI Characterizations of Fully-recessed E-mode GaN MIS-FETs with LPCVD-SiNx/PECVD-SiNx Gate Dielectric Stack

2016

Nitridation of GaN surface for power device application: A first-principles study

International Electron Devices Meeting

DOI

2016

Impact of integrated photonic-ohmic drain on static and dynamic characteristics of GaN-on-Si heterojunction power transistors

International Symposium on Power Semiconductor Devices and IC's

DOI

2016

Integration of LPCVD-SiNx gate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime

International Electron Devices Meeting

DOI

2016

High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure

IEEE Electron Device Letters

DOI

2016

Characterization of Static and Dynamic Behaviors in AlGaN/GaN-on-Si Power Transistors With Photonic-Ohmic Drain

IEEE Transactions on Electron Devices

DOI

2016

Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer

Scientific Reports

DOI

2016

Critical heterostructure design for low on-resistance normally-off double-channel MOS-HEMT

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)

DOI

2015

5d过渡金属原子掺杂氮化铝纳米管电子结构、磁性性质的第一性原理计算

《原子与分子物理学报》

2015

5d过渡金属原子吸附氮化硼纳米管的第一性原理计算

《原子与分子物理学报》

2015

单分子磁体中交换常数计算的新方法

《原子与分子物理学报》

2015

GaN as an interfacial passivation layer: tuning band offset and removing fermi level pinning for III-V MOS devices.

ACS Applied Materials and Interfaces

DOI

2015

Low On-Resistance Normally-Off GaN Double-Channel Metal–Oxide–Semiconductor High-Electron-Mobility Transistor

IEEE Electron Device Letters

DOI

2015

Interfacial bonding and electronic structure of GaN/GaAs interface: A first-principles study

DOI

2015

Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess

International Electron Devices Meeting

DOI

2015

Structure, electronic and magnetic properties of hexagonal boron nitride sheets doped by 5d transition metal atoms: First-principles calculations and molecular orbital analysis

DOI

2015

Electronic Structure and Ferromagnetism Modulation in Cu/Cu2O Interface: Impact of Interfacial Cu Vacancy and Its Diffusion

Scientific Reports

DOI

2014

First-principles calculations of 5d atoms doped hexagonal-AlN sheets: Geometry, magnetic property and the influence of symmetry and symmetry-breaking on the electronic structure

DOI

2013

5d过渡金属原子掺杂氮化硼纳米管的第一性原理计算

《物理学报》

2013

First-principles calculations of h-BN monolayers by doping with oxygen and sulfur

DOI

2026

Anisotropic Kinetics of Ion-Irradiation-Induced Phase Transition in Gallium Oxide

arXiv preprint

2025

Atomic-Size Dependence of the Fundamental Properties in Diamond-Type Semiconductors: Insights from Machine Learning and Bond Relaxation

SSRN Electronic Journal

DOI

2025

Systematic Characterization and Defect Analysis of Β-Ga2o3 Single Crystals Co-Designed by the Edge-Defined Film-Fed Growth Method and Numerical Analysis

SSRN Electronic Journal

DOI

2023

A Neuroevolution Potential for Predicting the Thermal Conductivity of Α, Β, and Ε-Ga2o3

SSRN Electronic Journal

DOI

2021

Phase Transition of Two-Dimensional Ferroelectric and Paraelectric Ga2O3 Monolayer: A Density Functional Theory and Machine-Learning Study

arXiv preprint

DOI

2021

Schottky Barrier Heights of Defect-free Metal/ZnO, CdO, MgO and SrO Interfaces

arXiv preprint

DOI

2020

Large Contribution of Quasi-Acoustic Shear Phonon Modes to Thermal Conductivity in Novel Monolayer Ga2O3

arXiv preprint

DOI

2020

Highly Anisotropic Electronic and Mechanical Properties of Monolayer and Bilayer As2S3

arXiv preprint

DOI

2019

Ultralow lattice thermal conductivity of monolayer penta-silicene and penta-germanene

arXiv preprint

DOI