叶甜春

期刊论文

1. Wenbo Fan, Xiaoyu Ke, Yajing Ding, Xianzhou Shao, Saifei Dai, Tao Hu, Runhao Han, Min Liao, Xinpei Jia, Fengbin Tian, Tingting Li, Bo Tang, Junshuai Chai, Hao Xu, Qing Luo, Xiaolei Wang, Wenwu Wang, Tianchun Ye (2026). A 950 °C-Thermal-Budget-Compatible Al 2 O 3 -Embedded Hf 0.5 Zr 0.5 O 2 Poly-Si Channel- Last FeFET for 3-D NAND Applications. IEEE Transactions on Electron Devices.DOI
2. Binbin Xu, Jing Xu, Xianglie Sun, Weibing Liu, Keyou Tong, Wenjun Zhang, J J Liu, xiaoxue ji, Jiahan Yu, Jinbiao Liu, JS Gao, Junfeng Li, Xiaolei Wang, Chao Zhao, Tianchun Ye, Jun Luo (2026). 35% Specific Contact Resistivity Reduction in Titanium-Based Ohmic Contact With Ultrathin Low-Oxide-Formation-Enthalpy Yttrium Interlayer. IEEE Electron Device Letters.DOI
3. Jing Zhou, Qianqi Zhao, Chuheng Xu, Jiabei Zhang, Ye Tian, Ke Chen, Qianhui Li, Qi Wang, Tianchun Ye, Zongliang Huo (2026). 3D-MANN: A 3D NAND flash-based reconfigurable architecture for Memory Augmented Neural Networks. Microelectronics Journal.DOI
4. Y T Li, Xianzhou Shao, Tao Hu, Ruoyao Ji, Mengwei Zhao, Zeqi Chen, Xiaoyu Ke, Kai Han, Hao Xu, Xiaolei Wang, Wenwu Wang, Tianchun Ye (2026). Enhanced Performance of FeFETs With TiN/SiO 2 /Hf 0.5 Zr 0.5 O 2 /SiO 2 /Si Gate Structure via Oxygen Post-Deposition Annealing Tailoring. IEEE Transactions on Electron Devices.DOI
5. Zeqi Chen, Tao Hu, Xinpei Jia, Ruoyao Ji, Runhao Han, Mingkai Bai, Yuejia Zhou, Runteng Zhu, Xiaoqing Sun, Xiaoyu Ke, Junshuai Chai, HJ Xu, Kai Han, Kechao Tang, Xiaolei Wang, Wenwu Wang, Tianchun Ye (2026). Enhancing HfO 2 -Based Si Channel FeFET Retention by Tunneling Barrier Engineering: Inserting Al 2 O 3 Layers to Increase Tunneling Barrier. IEEE Transactions on Electron Devices.DOI
6. Zhou Wang, Haochen Du, Zhou Shu, Jiuren Zhou, Xiguang Wu, Qiankun Li, Yanqing Xu, Hanqi Feng, Xiaonan Tang, Shushan Qiao, Tianchun Ye, Anil A. Bharath, Emm Mic Drakakis (2026). GTPE: A 28nm 33.12 TFLOPS/W GNN Training Processor with Unstructured Multi Threshold Pruning, Hybrid Multi-mode Approximate Computing and QUIRE Number System Support. IEEE International Symposium on Circuits and Systems proceedings.DOI
7. Junhao Du, Xuewei Zhao, Yuanhao Miao, Jiale Su, Xiangliang Duan, Tianyu Dong, Jiahan Yu, Hongxiao Lin, Yuhui Ren, Tianchun Ye, Henry H. Radamson (2026). High-performance Ge-on-insulator photodetector enabled by thick Ge spacer and tensile-strained GeSi/Ge multiple quantum wells. Optics Express.DOI
8. Yuanyuan Zhao, Xiaoqing Sun, Min Liao, Kaiyi Li, Xinpei Jia, Saifei Dai, Mingkai Bai, Yajing Ding, Tao Hu, Tingting Li, Xianzhou Shao, Xiaoyu Ke, Junshuai Chai, Hao Xu, Xiaolei Wang, Wenwu Wang, Tianchun Ye (2026). Antiferroelectric-Boost Charge Trapping Flash Enabled by Antiferroelectric/N-Rich-SiON Co-Optimization With 100-ns Operating Speed. IEEE Transactions on Electron Devices.DOI
9. Shao-Feng Tan, Xing Zhao, Chao Li, Borong Liang, Bin-Hong Li, Jianzhong Li, Jing Xu, Jun Luo, B. Gao, Tianchun Ye (2026). A low phase noise VCO with a common-mode resonance self-calibration system. Microelectronics Journal.DOI
10. Jiale Su, Ben Li, Yuhui Ren, Junhao Du, Xiangliang Duan, Tianyu Dong, Xueyin Su, Tian-Chun Ye, Xue-Wei Zhao, Yuanhao Miao, Henry H. Radamson (2026). Low-Defect Bulk-Germanium-on-Insulator Photodetectors with Resonant Cavity Enhancement at 1550 nm for High-Resolution SWIR Imaging. Nanomaterials.DOI
11. 叶甜春，朱煜，张国铭，杜晓黎，雷震霖，苑朋朋（2025）. 面向“十五五”的半导体装备的挑战与机遇. 《中国科学院院刊》, Vol. 40, No. 5.下载原文
12. Kaiyi Li, Saifei Dai, Yajing Ding, Xianzhou Shao, Tao Hu, Xinpei Jia, Fengbin Tian, Xiaoqing Sun, Junshuai Chai, Hao Xu, Kai Han, Xiaolei Wang, Wenwu Wang, Tianchun Ye (2025). Impact of interlayer on gate leakage during endurance fatigue of Si-channel FeFETs. Applied Physics Letters.DOI
13. Tao Hu, Xinpei Jia, Runhao Han, Jia Ni Yang, Mingkai Bai, Saifei Dai, Zeqi Chen, Yajing Ding, Xianzhou Shao, Shuai Yang, Kai Han, Yanrong Wang, Jing Zhang, Yuanyuan Zhao, Xiaoyu Ke, Xiaoqing Sun, Junshuai Chai, Hao Xu, Xiaolei Wang, Wenwu Wang, Tianchun Ye (2025). Effect of Top Al 2 O 3 Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/Al 2 O 3 /Hf 0.5 Zr 0.5 O 2 /SiO x /Si (MIFIS) Gate Structure. IEEE Transactions on Electron Devices.DOI
14. Jiahan Yu, Xuewei Zhao, Libin Liu, Jiale Su, Junhao Du, Hongxiao Lin, Yuanhao Miao, Tianchun Ye, Henry H. Radamson (2025). High-responsivity GOI PIN photodetectors with periodic SiO2/Si DBR structures for SWIR imaging application. Journal of Materials Science Materials in Electronics.DOI
15. S.G. Tan, Xing Zhao, Chao Li, Binhong Li, Jianzhong Li, Tianchun Ye, Bo Gao, Jun Luo (2025). Low-phase-noise wideband dual-core quad-mode VCO using a mode-switching transformer. Microelectronics Journal.DOI
16. Mingkai Bai, Xiaoqing Sun, Tao Hu, Yajing Ding, Xinpei Jia, Runhao Han, Xiaoyu Ke, Junshuai Chai, Kai Han, Hao Xu, Xiaolei Wang, Wenwu Wang, Tianchun Ye (2025). Effects of Unipolar and Bipolar Pulses on Leakage and Breakdown in HZO-Based FeFETs: A Path to Improved Endurance. IEEE Transactions on Electron Devices.DOI
17. Yong Du, Yongkui Zhang, Hongyue Zhu, B. H. Wang, Qingru Wang, W.L. Liu, Z. C. Wang, T. R. Luo, S. S. Lu, P. H. Sun, X. Y. Chen, Yanlan Zheng, Hong Yang, Junjie Li, J.F. Li, Xiaolei Wang, Jun Luo, W.W. Wang, B. W. Dai, Tianchun Ye (2025). Complementary Vertical FETs (CVFETs) Enabled by a Novel Dual-Side Process. IEEE Electron Device Letters.DOI
18. Runhao Han, Jia Ni Yang, Tao Hu, Mingkai Bai, Yajing Ding, Xianzhou Shao, Xinpei Jia, Saifei Dai, Xiaoqing Sun, Junshuai Chai, Hao Xu, Kai Han, Xiaolei Wang, Wenwu Wang, Tianchun Ye (2025). Investigating the Charge Trapping Behavior and Enhancing the Memory Window of Silicon Channel Hf0.5Zr0.5O2 FeFET With SiO2/HfO2/SiO2 Gate Side Interlayer. IEEE Transactions on Electron Devices.DOI
19. Tiexin Zhang, Fanyu Liu, Lei Shu, Siyuan Chen, Jiangjiang Li, Yuchong Wang, Yuchen Wu, Jing Wan, Yong Ping Xu, Bo Li, Zhongying Xue, Zhengsheng Han, Tianchun Ye (2025). Temperature Dependency of Non-Equilibrium Body Potential in SOI SBFETs. IEEE Transactions on Electron Devices.DOI
20. Junhao Du, Xuewei Zhao, Yuanhao Miao, Jiale Su, Ben Li, Xiangliang Duan, Tianyu Dong, Jiahan Yu, Hongxiao Lin, Yuhui Ren, Bo Wang, Tianchun Ye, Henry H. Radamson (2025). Demonstration of Planar Geometry PIN Photodetectors with GeSi/Ge Multiple Quantum Wells Hybrid Intrinsic Region on a Ge-on-Insulator Platform. ACS Applied Electronic Materials.DOI
21. Yajing Ding, Saifei Dai, Xiaoqing Sun, Xianzhou Shao, Min Liao, Fengbin Tian, Xinpei Jia, Hongyang Fan, Yuanyuan Zhao, Tao Hu, Mingkai Bai, Xiaoyu Ke, Junshuai Chai, Jinjuan Xiang, Kai Han, Hao Xu, Xiaolei Wang, Wenwu Wang, Tianchun Ye (2025). Impact of Saturated Spontaneous Polarization on the Memory Window and Endurance of Hafnium-Based Si Channel FeFET. IEEE Transactions on Electron Devices.DOI
22. Mingkai Bai, Xiaoqing Sun, Runhao Han, Yajing Ding, Tao Hu, Yuanyuan Zhao, Saifei Dai, Kai Han, Junshuai Chai, Hao Xu, Xiaolei Wang, Wenwu Wang, Tianchun Ye (2025). A One-Transistor DRAM Memory Cell Using HfO2-Based Ferroelectric-Assisted Charge Trapping Concept. IEEE Transactions on Electron Devices.DOI
23. Hongxiao Lin, Yuanhao Miao, Yuhui Ren, Yongkui Zhang, Qingzhu Zhang, Wenjuan Xiong, Jiahan Yu, Xuewei Zhao, Renrong Liang, Jun Xu, Tianchun Ye, Henry H. Radamson (2025). Impact of gate length on the electrical characteristics of junctionless FDSOI strained SiGe channel p-FinFET. Journal of Materials Science Materials in Electronics.DOI
24. Yinyin Shang, Chenhe Gao, Xing Zhao, Binhong Li, Jianzhong Li, Wei Zhu, Jianfei Wu, Hongli Zhang, Jun Luo, Tianchun Ye, Jun Li, Changhua Hu (2025). Synergistic effect of total ionizing dose and electromagnetic interference in SRAM using 22 nm FDSOI technology. Microelectronics Reliability.DOI
25. Cunhua Dou, Weijia Song, Yanguang Yu, Xuan Zhang, Zhiyu Tang, Xing Zhao, Fanyu Liu, Shujian Xue, Huabin Sun, Jing Wan, Binhong Li, Yun Wang, Tianchun Ye, Yong Ping Xu, Sorin Cristoloveanu (2025). The Planar Core–Shell Junctionless MOSFET. Micromachines.DOI
26. Wentian Wu, Q. Li, Tong Qu, Qi Wang, Zongliang Huo, Tianchun Ye (2025). POFGSP: Priority-Based Out-of-Order Scheduling and Fine-Grain Status Polling for SSD Performance Improvement. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.DOI
27. Xinpei Jia, Tao Hu, Mingkai Bai, Xiaoqing Sun, Junshuai Chai, Hao Xu, Xiaolei Wang, Wenwu Wang, Tianchun Ye (2025). Prediction of Endurance Characteristics in Si FeFET with Ferroelectric Hf0.5Zr0.5O2. IEEE Electron Devices Technology & Manufacturing Conference (EDTM).DOI
28. Zeqi Chen, Tao Hu, Xinpei J Jia, Runhao Han, Jia Ni Yang, Yajing Ding, Xiaoqing Sun, Junshuai Chai, Hao Xu, Xiaolei Wang, Wenwu Wang, Tianchun Ye (2025). Study of Threshold Voltage Degradation Mechanism of Ferroelectric Field-EffectTransistors (FeFETs) with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) GateStacks. IEEE Electron Devices Technology & Manufacturing Conference (EDTM).DOI
29. Tao Hu, Runhao Han, Xinpei Jia, Jia Ni Yang, Zeqi Chen, Xiaoqing Sun, Junshuai Chai, Hao Xu, Xiaolei Wang, Wenwu Wang, Tianchun Ye (2025). Effect of Top Al2O3 Interlayer Thickness on the Memory Window of Fefets with TiN/Al2O3/Hf0.5Zr0.5O2 /SiOx /Si (MIFIS) Gate Structure. IEEE Electron Devices Technology & Manufacturing Conference (EDTM).DOI
30. Qianqi Zhao, Jing He, Tong Qu, Wentian Wu, Q. Li, Qi Wang, Zongliang Huo, Tianchun Ye (2025). NV-APP: Invalid Programming Performance Improved No-Verify and Adaptive Pulse Programming Scheme for 3-D QLC nand Flash. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.DOI
31. Yu Yan, Weijia Song, Cunhua Dou, Xing Zhao, Shujian Xue, Yong Ping Xu, Binhong Li, Yun Wang, Tianchun Ye, Sorin Cristoloveanu (2025). A planar core-shell junctionless transistor compatible with FD-SOI Technology. Solid-State Electronics.DOI
32. Tiexin Zhang, Fanyu Liu, Lei Shu, Siyuan Chen, Yuchong Wang, Yuchen Wu, Jing Wan, Yong Ping Xu, Shi Li, Yuyang Ding, Bo Li, Zhengsheng Han, Tianchun Ye (2025). Radiation Dose Detector of γ -Ray Based on Transient Nonequilibrium Body Potential Under Pseudo-MOSFET Configuration. IEEE Transactions on Instrumentation and Measurement.DOI
33. Xuan Zhang, Yu Yan, Wei-Jia Song, Cunhua Dou, Xing Zhao, Shujian Xue, Yong Xu, Bin-Hong Li, Yun Wang, Tianchun Ye, Sorin Cristoloveanu (2025). New Insights into Back-Biasing Effects in Advanced FD-SOI MOSFETs. 2025 5th International Conference on Neural Networks, Information and Communication Engineering (NNICE).DOI
34. Yuhui Ren, Jiale Su, Jiahan Ke, Hongxiao Lin, Ben Li, Zhen-Zhen Kong, Yi-Wen Zhang, Junhao Du, Ren-Rong Liang, Jun Xu, Xiangliang Duan, Tianyu Dong, Xueyin Su, Tian-Chun Ye, Xue-Wei Zhao, Yuanhao Miao, Henry H. Radamson (2025). Fabrication and Characterization of Back-Gate and Front-Gate Ge-on-Insulator Transistors for Low-Power Applications. Electronics.DOI
35. Wenhao Lu, Niannian Ge, Caiping Wan, Hengyu Xu, Zhi Hao Jin, Tianchun Ye, Zhou Jingtao (2024). The effects of sequential annealing in NO and wet-O2 on interfacial properties and reliability of 4H-SiC (0001) MOS devices. Semiconductor Science and Technology.DOI
36. Siyuan Chen, Jiangjiang Li, Fanyu Liu, Bo Li, Yuchong Wang, Huiping Zhu, Yang Huang, Lei Shu, Duoli Li, Gang Zhang, Fang Wang, Yinuo Zhang, Jiajia Wang, Bao‐Gang Sun, Yuxin Sun, Weier Lu, Xinyi Zhang, Binhong Li, Tianchun Ye (2024). Comparison of Total Ionizing Dose Effects Between Double and Conventional SOI Devices. IEEE Transactions on Nuclear Science.DOI
37. Runhao Han, Tao Hu, Jia Yang, Mingkai Bai, Yajing Ding, Xianzhou Shao, Saifei Dai, Xiaoqing Sun, Junshuai Chai, Hao Xu, Kai Han, Xiaolei Wang, Wenwu Wang, Tianchun Ye (2024). Improvement of Memory Window of Silicon Channel Hf₀.₅Zr₀.₅O₂ FeFET by Inserting Al₂O₃/HfO₂/Al₂O₃ Top Interlayer. IEEE Transactions on Electron Devices.DOI
38. Zhou Wang, Haochen Du, Jiuren Zhou, Yanqing Xu, Xiaonan Tang, Tianchun Ye, Shaojun Wei, Shushan Qiao, Shouyi Yin (2024). SSPE: A Device-edge SNN Inference Artificial Intelligence Processor in Supporting Smart Computing. IEEE Asia Pacific Conference on Circuits and Systems (APCCAS).DOI
39. Zhou Wang, Haochen Du, Jiuren Zhou, Yang Zhou, Xiaonan Tang, Tianchun Ye, Shaojun Wei, Shushan Qiao, Shouyi Yin (2024). GRS: A General RISC-V SIMD Vector Acceleration Processor for Artificial Intelligence Applications. IEEE Asia Pacific Conference on Circuits and Systems (APCCAS).DOI
40. Xianzhou Shao, Junshuai Chai, Fengbin Tian, Xiaoyu Ke, Min Liao, Saifei Dai, Hongyang Fan, Xiaoqing Sun, Hao Xu, Kai Han, Jinjuan Xiang, Xiaolei Wang, Jing Zhang, Wenwu Wang, Tianchun Ye (2024). Evidence of Oxygen Vacancy Generation as Physical Origin of Endurance Fatigue of Si FeFET With TiN/Hf0.5Zr0.5O2/SiOx/Si Gate-Stacks. IEEE Transactions on Electron Devices.DOI
41. Jia Ni Yang, Runhao Han, Tao Hu, Saifei Dai, Xianzhou Shao, Xiaoqing Sun, Junshuai Chai, Hao Xu, Kai Han, Yanrong Wang, Jing Zhang, Xiaolei Wang, Wenwu Wang, Tianchun Ye (2024). Effect of Nitridation of Bottom Interlayer in FeFETs With the TiN/Al 2 O 3 /Hf 0.5 Zr 0.5 O 2 /Bottom Interlayer/Si Substrate Structure. IEEE Transactions on Electron Devices.DOI
42. Tao Hu, Xianzhou Shao, Mingkai Bai, Xinpei Jia, Saifei Dai, Xiaoqing Sun, Runhao Han, Jia Ni Yang, Xiaoyu Ke, Fengbin Tian, Shuai Yang, Junshuai Chai, Hao Xu, Xiaolei Wang, Wenwu Wang, Tianchun Ye (2024). Impact of Top SiO₂ Interlayer Thickness on Memory Window of Si Channel FeFET With TiN/SiO₂/Hf₀.₅Zr₀.₅O₂/SiOx/Si (MIFIS) Gate Structure. IEEE Transactions on Electron Devices.DOI
43. Cheng Zhang, Fanyu Liu, Xiaojing Li, Siyuan Chen, Lei Shu, Lili Ding, Qiwen Zheng, Yong Ping Xu, Xiao Yu, Jing Wan, Zhengsheng Han, Bo Li, Tianchun Ye (2024). Total Ionizing Dose Effect and Radiation Hardness Analysis on Low-Leakage ESD Devices Fabricated on Double SOI Technology. IEEE Transactions on Electron Devices.DOI
44. Shichao Jia, Tianchun Ye, Shimao Xiao (2024). Analysis of the Second-Order NS SAR ADC Performance Enhancement Based on Active Gain. Electronics.DOI
45. Ai He, Binhong Li, Jianzhong Li, Xing Zhao, Jincai Guo, Jian‐Ping Wang, Xiangqian Zeng, Yun Wang, Tianchun Ye, Quan Xue (2024). A two-stage slicer employing body biasing for 64-Gb/s PAM4 wireline receiver in 22-nm FDSOI technology. Microelectronics Journal.DOI
46. Zijin Yan, Huilong Zhu, Weixing Huang, Hong Wei Yang, Qi Wang, Shunshun Lu, Shuai Yang, Junjie Li, Na Zhou, Yue Zhang, Yunfei Shi, Liang Xiang, Wenbo Liu, Binghui Wang, Yongkui Zhang, Junfeng Li, Jun Luo, Tianchun Ye (2024). A Common Source 3D FeFET with Disturb Inhibition Program and Erase Method. ECS Journal of Solid State Science and Technology.DOI
47. Xueyin Su, Binbin Xu, Bo Tang, Jing Xu, Jinbiao Liu, Yan Cui, Meiyin Yang, Bohan Chen, Keyou Tong, Guanyuan Zhao, Binhong Li, Xiaolei Wang, Tianchun Ye, Jun Luo (2024). Comparative Cryogenic Investigation of FD-SOI Devices with Doped Epitaxial and Metallic Source/Drain. ECS Journal of Solid State Science and Technology.DOI
48. Jianfang He, Huwen Ding, Yayi Wei, Tianchun Ye (2024). Mask 3D parameter optimization for improving imaging contrast of plasmonic lithography. Applied Optics.DOI
49. Shichao Jia, Tianchun Ye, Shimao Xiao (2024). A 2.41 ppm/°C bandgap voltage reference with second‐order curvature compensation. International Journal of Circuit Theory and Applications.DOI
50. Shichao Jia, Tianchun Ye, Shimao Xiao (2024). A 2.25 ppm/°C High-Order Temperature-Segmented Compensation Bandgap Reference. Electronics.DOI
51. Jiahan Yu, Xuewei Zhao, Yuanhao Miao, Jiale Su, Zhenzhen Kong, Hongxiao Li, Yuanyuan Wu, Ziwei Zhou, Bo Wang, Tianchun Ye, Henry H. Radamson (2024). High-Performance Ge PIN Photodiodes on a 200 mm Insulator with a Resonant Cavity Structure and Monolayer Graphene Absorber for SWIR Detection. ACS Applied Nano Materials.DOI
52. H. Ren, Fanyu Liu, Bo Li, Junyan Zhu, Siyuan Chen, Linfei Wang, Shanshan Ma, Gang Zhang, Jiangjiang Li, Pengyu Cui, Jiantou Gao, Dinghan Ye, Haibin Wang, Jing Wan, Zhengsheng Han, Tianchun Ye (2024). Impact of Back-Gate Bias and Body-Tie on the DSOI SRAMs Under Total Ionizing Dose Irradiation. IEEE Transactions on Nuclear Science.DOI
53. Anyi Zhu, Lei Jin, Jianquan Jia, Tianchun Ye, Ming Zeng, Zongliang Huo (2024). HCMS: A Hybrid Conductance Modulation Scheme Based on Cell-to-Cell Z-Interference for 3D NAND Neuromorphic Computing. IEEE Journal of the Electron Devices Society.DOI
54. Xinchang Wang, Yun Wang, Yansong Liu, Ya-Yi Wei, Tianchun Ye (2024). Application of a CFD Simulation on Spin Coating Process. 2024 2nd International Symposium of Electronics Design Automation (ISEDA).DOI
55. Zhen-Zhen Kong, Zong-Hu Li, Yu-Chen Zhou, Gang Cao, Hai-Ou Li, Jiale Su, Yi-Wen Zhang, Jinbiao Liu, Guo-Ping Guo, Jun-Feng Li, Jun Luo, Chao Zhao, Tian-Chun Ye, Guilei Wang (2024). High Mobility SiGe/Ge 2DHG Heterostructure Quantum Wells for Semiconductor Hole Spin Qubits.
56. 叶甜春，李博，刘凡宇，李多力，李彬鸿，陈思远（2023）. 一种新型高抗辐照可配置SOI器件技术. 《原子能科学技术》.
57. 柴俊帅，徐昊，王晓磊，罗军，王文武，叶甜春（2023）. SiON界面层对铪基FeFET栅缺陷影响的第一性原理研究. 《微纳电子与智能制造》.
58. Anyi Zhu, Lei Jin, Wen Zhou, Tianchun Ye, Zongliang Huo (2023). Self-Organizing Mapping Neural Network Implementation Based on 3-D NAND Flash for Competitive Learning. IEEE Journal of the Electron Devices Society.DOI
59. Hongxiao Lin, Xing Guo Zhao, Xing Guo Zhao, Xue Gang Luo, Yuanhao Miao, Yongkui Zhang, Zhenzhen Kong, Guilei Wang, Hong Yang, Zhenhua Wu, Yunfei Shi, Bin Lü, Linpeng Dong, Wenjuan Xiong, Renrong Liang, Jun Xu, Xuewei Zhao, Xuewei Zhao, Tianchun Ye, Henry H. Radamson (2023). High performance junctionless FDSOI SiGe channel p-FinFET with high ION/IOFF ratio and excellent SS. Materials Science in Semiconductor Processing.DOI
60. Zhenzhen Kong, Yanpeng Song, Hailing Wang, Xiaomeng Liu, Xiangsheng Wang, Jinbiao Liu, Ben Li, Jiale Su, Xinyu Tan, Qingjie Luan, Hongxiao Lin, Yuhui Ren, Yiwen Zhang, Jingxiong Liu, Junfeng Li, Anyan Du, Henry H. Radamson, Chao Zhao, Tianchun Ye, Guilei Wang (2023). Interface Investigation on SiGe/Si Multilayer Structures: Influence of Different Epitaxial Process Conditions. ACS Applied Materials & Interfaces.DOI
61. Lu Xie, Huilong Zhu, Yongkui Zhang, Xuezheng Ai, Junjie Li, Guilei Wang, Jinbiao Liu, Anyan Du, Hong Yang, Xiaogen Yin, Weixing Huang, Chen Li, Yangyang Li, Qi Wang, Shunshun Lu, Zhenzhen Kong, Jinjuan Xiang, Yong Du, Jun Luo, Junfeng Li, Henry H. Radamson, Wenwu Wang, Tianchun Ye (2023). Demonstration of Germanium Vertical Gate-All-Around Field-Effect Transistors Featured by Self-Aligned High-κ Metal Gates with Record High Performance. ACS Nano.DOI
62. Huwen Ding, Taian Fan, Libin Zhang, Yayi Wei, Tianchun Ye (2023). Three-dimensional plasmonic lithography imaging modeling based on the RCWA algorithm for computational lithography. Optics Express.DOI
63. Yu Zhang, Yilin Pu, Bin Wu, Haoyu Shen, Tianchun Ye (2023). A CJ-LMS hybrid calibration algorithm in SAR ADC. IEICE Electronics Express.DOI
64. Yi Tong, Libin Zhang, Yayi Wei, Tianchun Ye, Yun Wang (2023). Process and Tool Monitor and Diagnosis Based on Overlay Data and Modeling. China Semiconductor Technology International Conference (CSTIC).DOI
65. Wenhao Lu, Caiping Wan, Niannian Ge, Tianchun Ye, Hengyu Xu (2023). The effects of stress on interfacial properties and flatband voltage instability of 4H-SiC MOS structures. Microelectronics Reliability.DOI
66. Bo Zhang, Qi Wang, Xianliang Wang, Xiaolei Yu, Qianhui Li, Jing He, Zongliang Huo, Tianchun Ye (2023). Monitor Units Assisted LDPC Decoding Algorithm based on Page BER Variation of 3D NAND Flash Memory. Microelectronics Reliability.DOI
67. Jing He, Xiaolei Yu, Qianhui Li, Bo Zhang, Xianliang Wang, Xianliang Wang, Qianqi Zhao, Xuhong Qiang, Qi Wang, Zongliang Huo, Tianchun Ye (2023). DNN-based error level prediction for reducing read latency in 3D NAND flash memory. Microelectronics Reliability.DOI
68. Zhenzhen Kong, Zonghu Li, Gang Cao, Jiale Su, Yiwen Zhang, Jinbiao Liu, Jingxiong Liu, Yuhui Ren, Huihui Li, Laiming Wei, Guo‐Ping Guo, Yuanyuan Wu, Henry H. Radamson, Junfeng Li, Zhenhua Wu, Hai-Ou Li, Jiecheng Yang, Chao Zhao, Tianchun Ye, Guilei Wang (2023). Undoped Strained Ge Quantum Well with Ultrahigh Mobility of Two Million. ACS Applied Materials & Interfaces.DOI
69. Shuai Li, Jun Luo, Tianchun Ye (2023). Investigation of Reducing Interface State Density in 4H-SiC by Increasing Oxidation Rate. Nanomaterials.DOI
70. Shuai Li, Jun Luo, Tianchun Ye (2023). Research on Interface Properties of Thermally Grown SiO2 and ALD SiO2 Stacked Structures. ECS Journal of Solid State Science and Technology.DOI
71. Xianglie Sun, Jing Xu, Jianfeng Gao, Jinbiao Liu, Yan‐Ping He, Xu Chen, Mengjuan Kong, Yongliang Li, Junfeng Li, Wenwu Wang, Tianchun Ye, Jun Luo (2023). Investigation of ultrathin yttrium silicide for NMOS source/drain contacts. Journal of Materials Science Materials in Electronics.DOI
72. Bao Zhang, Peizhen Hong, Jingwen Hou, Zongliang Huo, Tianchun Ye (2023). Doped HfO2-based ferroelectric-aided charge-trapping effect in MFIS gate stack of FeFET. Journal of Applied Physics.DOI
73. Zhen Song, Libin Zhang, Yang Shang, Yajuan Su, Yayi Wei, Tianchun Ye (2023). Balance between the diffraction efficiency and process robustness for plasmonic lithographic alignment technology considering the Fabry–Perot resonator effect. Applied Optics.DOI
74. Xianzhou Shao, Junshuai Chai, Fengbin Tian, Shujing Zhao, Jiahui Duan, Xiaoyu Ke, Xiaoqing Sun, Jinjuan Xiang, Kai Han, Yanrong Wang, Hao Xu, Xiaolei Wang, Jing Zhang, Wenwu Wang, Tianchun Ye (2023). Investigation of Endurance Degradation Mechanism of Si FeFET With HfZrO Ferroelectric by an In Situ Vth Measurement. IEEE Transactions on Electron Devices.DOI
75. Bo Zhang, Qi Wang, Xiaolei Yu, Qianhui Li, Jing He, Xianliang Wang, Qianqi Zhao, Qiang Xu, Zongliang Huo, Tianchun Ye (2023). FBEL: Enhanced LLR optimization algorithm based on the VSER prediction by flag bits in the bit-flipping scheme. IEICE Electronics Express.DOI
76. Xiaolei Yu, Jing He, Bo Zhang, Xianliang Wang, Qianhui Li, Qi Wang, Zongliang Huo, Tianchun Ye (2023). Interleaved LDPC Decoding Scheme Improves 3-D TLC NAND Flash Memory System Performance. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.DOI
77. Dandan Han, Sen Deng, Tianchun Ye, Yayi Wei (2023). Enhancement of pattern quality in maskless plasmonic lithography via spatial loss modulation. Microsystems & Nanoengineering.DOI
78. Wen Zhou, Lei Jin, Jianquan Jia, Kaikai You, Jiayin Han, Xinlei Jia, Jie Yuan, Hongtao Liu, An Zhang, Tianchun Ye, Zongliang Huo (2023). Winner-Takes-All Neural Network Based on 3D NAND Flash With 1-Bit Erase Scheme. IEEE Electron Device Letters.DOI
79. Yuchong Wang, Siyuan Chen, Fanyu Liu, Bo Li, Jiangjiang Li, Yang Huang, Tiexin Zhang, Xu Zhang, Zhengsheng Han, Tianchun Ye, Jing Wan (2023). The Effects of $\gamma$ Radiation-Induced Trapped Charges on Single Event Transient in DSOI Technology. IEEE International Reliability Physics Symposium proceedings.DOI
80. Zhenfang Xiao, Huilong Zhu, Qiuhong Wang, Zuyan Chen, Z. Y. Liu, Yongkui Zhang, Zijin Yan, Yunfei Shi, N. Zhou, J. J. Li, Jianfeng Gao, X. Z. Ai, S. S. Lu, Weixing Huang, Wangjun Xiong, Zhenzhen Kong, Jinjuan Xiang, Yongkui Zhang, Jianwen Zhao, Junbiao Liu, Yihong Lu, G. B. Bai, Xiaobin He, Anyan Du, Hong Yang, Tao Yang, Zhenhua Wu, J. F. Li, Jun Luo, W. W. Wang, Tianchun Ye (2023). Vertical N-Type and P-Type Nanosheet FETs With C-Shaped Channel. IEEE Transactions on Electron Devices.DOI
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165. Ruixuan Wu, Lisong Dong, Rui Chen, Tianchun Ye, Yayi Wei (2019). A method for compensating lithographic influence of EUV mask blank defects by an advanced genetic algorithm. International Conference on Extreme Ultraviolet Lithography.DOI
166. Yunyun Hao, Lisong Dong, Xi Chen, Rui Chen, Taian Fan, Yayi Wei, Tianchun Ye (2019). Impact of EUV multilayer mask defects on imaging performance and its correction methods. International Conference on Extreme Ultraviolet Lithography.DOI
167. Pengzheng Gao, Xiaojing Su, Weijie Shi, Yayi Wei, Tianchun Ye (2019). Sub-Resolution Assist Feature Cleanup Based on Grayscale Map. IEEE Transactions on Semiconductor Manufacturing.DOI
168. Xueli Ma, Lixing Zhou, Jinjuan Xiang, Hong Yang, Xiaolei Wang, Yongliang Li, Jing Zhang, Chao Zhao, Huaxiang Yin, Wenwu Wang, Tianchun Ye (2019). Identification of a suitable passivation route for high-k/SiGe interface based on ozone oxidation. Applied Surface Science.DOI
169. Longda Zhou, Ying Luo, Eddy Roger Simoen, Hong Yang, Huaxiang Yin, Anyan Du, Huilong Zhu, Chao Zhao, Wenwu Wang, Tianchun Ye, Guilei Wang, Xiaogen Yin, Bo Tang, Qianqian Liu, Zhigang Ji, Hao Xu, Zhenzhen Kong, Haojie Jiang (2019). Comparison of NBTI kinetics in RMG Si p-FinFETs featuring Atomic Layer Deposition Tungsten (ALD W) Filling Metal Using B2H6 and SiH4 Precursors.DOI
170. Na Xi, Fujiang Lin, Tianchun Ye (2019). A Low Phase Noise, High Phase Accuracy Quadrature LC-VCO With Dual-Tail Current Biasing to Insert Reconfigurable Phase Delay. IEEE Transactions on Circuits & Systems II Express Briefs.DOI
171. Dan Zhang, Shujuan Mao, Guilei Wang, Jing Xu, Xue Gang Luo, Chao Zhao, Junfeng Li, Wenwu Wang, Dapeng Chen, Tianchun Ye, Jun Luo (2019). Exploration of the impact of interface states density on the specific contact resistivity in TiSi x /n + -Si Ohmic contacts through high-low frequency method. Japanese Journal of Applied Physics.DOI
172. Xiaojing Su, Dong Shen, Yayi Wei, Taian Fan, Lisong Dong, Libin Zhang, Yajuan Su, Rui Chen, Tianchun Ye (2019). Probability prediction model for bridging defects induced by combined influences from lithography and etch variations. Journal of Micro/Nanopatterning Materials and Metrology.DOI
173. Kai Han, Xiaolei Wang, Jinjuan Xiang, Lixing Zhou, Jiazhen Zhang, Yanrong Wang, Xueli Ma, Hong Yang, Jing Zhang, Chao Zhao, Tianchun Ye, Wenwu Wang (2019). Evaluation of hole mobility degradation by remote Coulomb scattering in Ge pMOSFETs. Semiconductor Science and Technology.DOI
174. Dan Zhang, Jing Xu, Shujuan Mao, Chao Feng Zhao, Guilei Wang, Xue Gang Luo, Junfeng Li, Yongliang Li, Wenwu Wang, Dapeng Chen, Tianchun Ye, Jun Luo (2019). Co-sputtering Co–Ti alloy as a single barrier/liner for Co interconnects and thermal stability enhancement using TiN metal capping. Journal of Materials Science Materials in Electronics.DOI
175. Dan Zhang, Chao Zhao, Jun Luo, Shujuan Mao, Guilei Wang, Jing Xu, Xue Gang Luo, Junfeng Li, Yongliang Li, Wenwu Wang, Dapeng Chen, Tianchun Ye (2019). Experimental investigation of fundamental film properties for Co1−xTix alloying films with different compositions (0 ≤ x≤1). Journal of Materials Science Materials in Electronics.DOI
176. Tianyang Gai, Ying Chen, Pengzheng Gao, Xiaojing Su, Lisong Dong, Yajuan Su, Yayi Wei, Tianchun Ye (2019). Sample patterns extraction from layout automatically based on hierarchical cluster algorithm for lithography process optimization.DOI
177. Lixing Zhou, Xiaolei Wang, Xueli Ma, Jinjuan Xiang, Chao Zhao, Tianchun Ye, Wenwu Wang (2019). Understanding of mobility degradation induced by gate charges of Ge pMOSFET. IEEE Electron Devices Technology and Manufacturing Conference (EDTM).DOI
178. Linjie Zhu, Bin Wu, Tianchun Ye (2019). An Enhanced ARQ Scheme for A-MPDU Transmission Under Error-Prone WLANs. IEEE Communications Letters.DOI
179. Guilei Wang, Mohammadreza Kolahdouz, Jun Luo, Changliang Qin, Shihai Gu, Zhenzhen Kong, Xiaogen Yin, Wenjuan Xiong, Xuewei Zhao, Jinbiao Liu, Tao Yang, Junfeng Li, Huaxiang Yin, Huilong Zhu, Wenwu Wang, Chao Zhao, Tianchun Ye, Henry H. Radamson (2019). Growth of SiGe layers in source and drain regions for 10 nm node complementary metal-oxide semiconductor (CMOS). Journal of Materials Science Materials in Electronics.DOI
180. Xueli Ma, Jinjuan Xiang, Lixing Zhou, Xiaolei Wang, Yongliang Li, Hong Yang, Jing Zhang, CHAO FANG ZHAO, Huaxiang Yin, Wenwu Wang, Tianchun Ye (2019). Comprehensive Study and Design of High-k/SiGe Gate Stacks with Interface-Engineering by Ozone Oxidation. ECS Journal of Solid State Science and Technology.DOI
181. Zhou Wang, Bin Wu, Tianchun Ye (2019). An improved implementation of sum-product algorithm for LDPC decoder. IEICE Electronics Express.DOI
182. Xue Gang Luo, Guilei Wang, Jing Xu, Shujuan Mao, Dan Zhang, Shi Liu, Junfeng Li, Yongliang Li, Wenwu Wang, Dapeng Chen, Chao Zhao, Tianchun Ye, Jun Luo (2019). Investigation of NiGe Films Formed on Both n+- and p+-Ge with P and B Ion Implantation before Germanidation. ECS Journal of Solid State Science and Technology.DOI
183. Li-Xing Zhou, Xiao-Lei Wang, Xue-Li Ma, Jin-Juan Xiang, Chao Zhao, Tianchun Ye, Wen-Wu Wang (2019). Origin of fixed charges and dipole in GeOx/Al2O3 gate stack based on Ge. International Symposium on VLSI Technology, Systems, and Applications.DOI
184. Li-Xing Zhou, Xiao-Lei Wang, Jin-Juan Xiang, Chao Zhao, Tianchun Ye, Wen-Wu Wang (2019). Comprehensive Study of Interfacial Charges in the GeOX/Al2O3 Gate Stack of Ge by Ozone Oxidation. China Semiconductor Technology International Conference.DOI
185. Shu-Juan Mao, Chao Zhao, Guilei Wang, Jing Xu, Xue Luo, Dan Zhang, Wen-Wu Wang, Da-Peng Chen, Jun-Feng Li, Tianchun Ye, Jun Luo (2019). Impacts of Ge Preamorphization Implantation and Si Capping on the Specific Contact Resistivity of Ni(Pt)SiGe/p+-SiGe Contacts. IEEE Transactions on Electron Devices.DOI
186. Li-Xing Zhou, Xiao-Lei Wang, Kai Han, Xue-Li Ma, Yan-Rong Wang, Jin-Juan Xiang, Hong Yang, Jing Zhang, Chao Zhao, Tianchun Ye, Wen-Wu Wang (2019). Experimental Investigation of Remote Coulomb Scattering on Mobility Degradation of Ge pMOSFET by Various PDA Ambiences. IEEE Transactions on Electron Devices.DOI
187. Yu Pan, Hua-Xiang Yin, Kailiang Huang, Zhao-Hao Zhang, Qing-Zhu Zhang, Kun-Peng Jia, Zhen-Hua Wu, Kun Luo, Jia-Han Yu, Jun-Feng Li, Wen-Wu Wang, Tianchun Ye (2019). Novel 10-nm Gate Length MoS2 Transistor Fabricated on Si Fin Substrate. IEEE Journal of the Electron Devices Society.DOI
188. Weikang Wan, Qi-Dong Wang, Tianchun Ye (2019). Research of Low-profile High Performance new AMC Antenna for 5G mm-Wave AiP Application. International Conference on Electronic Packaging Technology.DOI
189. Zhao-Hao Zhang, Gao-Bo Xu, Qing-Zhu Zhang, Zhaozhao Hou, Jun-Jie Li, Zhen-Zhen Kong, Yong-Kui Zhang, Jin-Juan Xiang, Qiu-Xia Xu, Zhen-Hua Wu, Hui-Long Zhu, Hua-Xiang Yin, Wen-Wu Wang, Tianchun Ye (2019). FinFET With Improved Subthreshold Swing and Drain Current Using 3-nm Ferroelectric Hf0.5Zr0.5O2. IEEE Electron Device Letters.DOI
190. Jiaxin Lin, Lisong Dong, Taian Fan, Xu Ma, Yayi Wei, Tianchun Ye (2019). Learning-based compressive sensing method for EUV lithographic source optimization. Optics Express.DOI
191. 叶甜春（2018）. 对国产半导体设备厂商发展的建议. 《集成电路应用》.
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193. Na Xi, Fujiang Lin, Tianchun Ye (2018). A low injection spur injection-locked LC-QVCO with self-injection technique. IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA).DOI
194. Lixing Zhou, Xiaolei Wang, Kai Han, Xueli Ma, Yanrong Wang, Jinjuan Xiang, Hong Yang, Jing Zhang, Chao Zhao, Tianchun Ye, Henry H. Radamson, Wenwu Wang (2018). Understanding dipole formation at dielectric/dielectric hetero-interface. Applied Physics Letters.DOI
195. Shujuan Mao, Guilei Wang, Jing Xu, Dan Zhang, Xue Gang Luo, Wenwu Wang, Dapeng Chen, Junfeng Li, Anyan Du, Chao Zhao, Tianchun Ye, Jun Luo (2018). Improved Ti germanosilicidation by Ge pre-amorphization implantation (PAI) for advanced contact technologies. Microelectronic Engineering.DOI
196. Lixing Zhou, Xiaolei Wang, Xueli Ma, Kai Han, Yanrong Wang, Jinjuan Xiang, Hong Yang, Jing Zhang, Chao Zhao, Tianchun Ye, Wenwu Wang (2018). Comprehensive investigation of the interfacial charges and dipole in GeO x /Al 2 O 3 gate stacks of Ge MOS capacitor by postdeposition annealing. Japanese Journal of Applied Physics.DOI
197. Jianfang He, Lisong Dong, Lijun Zhao, Yayi Wei, Tianchun Ye (2018). Retargeting of forbidden-dense-alternate structures for lithography capability improvement in advanced nodes. Applied Optics.DOI
198. Lixing Zhou, Xiaolei Wang, Xueli Ma, Kai Han, Yanrong Wang, Jinjuan Xiang, Hong Yang, Jing Zhang, Chao Zhao, Tianchun Ye, Wenwu Wang (2018). Identification of interfacial defects in a Ge gate stack based on ozone passivation. Semiconductor Science and Technology.DOI
199. Ningyuan Duan, Guilei Wang, Jing Xu, Shujuan Mao, Xue Gang Luo, Dan Zhang, Wenwu Wang, Dapeng Chen, Junfeng Li, Shi Liu, Chao Zhao, Tianchun Ye, Jun Luo (2018). Enhancing the thermal stability of NiGe by prior-germanidation fluorine implantation into Ge substrate. Japanese Journal of Applied Physics.DOI
200. Xue Gang Luo, Guilei Wang, Jing Xu, Ningyuan Duan, Shujuan Mao, Shi Liu, Junfeng Li, Wenwu Wang, Dapeng Chen, Chao Zhao, Tianchun Ye, Jun Luo (2018). Impact of Ge pre-amorphization implantation on forming ultrathin TiGe x on both n- and p-Ge substrate. Japanese Journal of Applied Physics.DOI
201. Hong Yang, Weichun Luo, Longda Zhou, Hao Xu, Bo Tang, Eddy Roger Simoen, Huaxiang Yin, Huilong Zhu, Chao Zhao, Wenwu Wang, Tianchun Ye (2018). Impact of ALD TiN Capping Layer on Interface Trap and Channel Hot Carrier Reliability of HKMG nMOSFETs. IEEE Electron Device Letters.DOI
202. Qiuxia Xu, Wei Zou, Gaobo Xu, Shan Tang, Guilong Tao, Siamak Salimian, Jinbiao Liu, Qingqing Liang, Yao Wang, Jinjuan Xiang, Xiaolei Wang, Huilong Zhu, Junfeng Li, Chao Zhao, Deven Raj, Helen L. Maynard, Dapeng Chen, Tianchun Ye (2018). Band-Edge Work Function Obtained by Plasma Doping TiN Metal Gate for nMOS Device Application. IEEE Transactions on Electron Devices.DOI
203. Ling Ma, Qiang Wu, Lisong Dong, Qiaoqiao Li, Yayi Wei, Tianchun Ye (2018). Development defect model for immersion photolithography. Journal of Micro/Nanopatterning Materials and Metrology.DOI
204. Yayi Wei, Ying Chen, Yajuan Su, Tianyang Gai, Xiaojing Su, Tianchun Ye (2018). Hybrid hotspot library building based on optical and geometry analysis at early stage for new node development.DOI
205. Libin Zhang, Lisong Dong, Lijun Zhao, Tianchun Ye, Yayi Wei, Jianfang He (2018). The method for optimizing mask parameter suitable for lithography process.DOI
206. Qingzhu Zhang, Huaxiang Yin, Lingkuan Meng, Jiaxin Yao, Junjie Li, Guilei Wang, Yudong Li, Zhenhua Wu, Wenjuan Xiong, Hong Yang, Hailing Tu, Junfeng Li, Chao Zhao, Wenwu Wang, Tianchun Ye (2018). Novel GAA Si Nanowire p-MOSFETs With Excellent Short-Channel Effect Immunity via an Advanced Forming Process. IEEE Electron Device Letters.DOI
207. Tianchun Ye (2018). Foreword to the Journal of Microelectronic Manufacturing Generalized Euler'Constant Family. Journal of Microelectronic Manufacturing.DOI
208. Zhou Wang, Bin Wu, Tianchun Ye (2018). FPGA and ASIC implementation of reliable and effective architecture for a LTE downlink transmitter. IEICE Electronics Express.DOI
209. Su-Mei Wang, Mei-Yin Yang, Jun Luo, Chao Zhao, Wen-Wu Wang, Tianchun Ye (2018). Switching of Exchange-Coupled Perpendicularly Magnetized Layers Under Spin–Orbit Torque. IEEE transactions on magnetics.DOI
210. Jun Luo, Shu-Juan Mao, Jing Xu, Guilei Wang, Dan Zhang, Xue Luo, Ning-Yuan Duan, Shi Liu, Wen-Wu Wang, Da-Peng Chen, Jun-Feng Li, Chao Zhao, Tianchun Ye (2018). On the manifestation of Ge pre-amorphization implantation (PAI) impact on both the formation of ultrathin TiSix and the specific contact resistivity in TiSix/n-Si contacts for sub-16/14 nm nodes and beyond. International Workshop on Junction Technology.DOI
211. Li-Jun Zhao, Lisong Dong, Li-Bin Zhang, Yayi Wei, Tianchun Ye (2018). Resist model setup for negative tone development at 14NM node. China Semiconductor Technology International Conference.DOI
212. Longda Zhou, Bo Tang, Hong Yang, Hao Xu, Yong-Liang Li, E. Simoen, Hua-Xiang Yin, Hui-Long Zhu, Chao Zhao, Wen-Wu Wang, Da-Peng Chen, Tianchun Ye (2018). Physical Mechanism Underlying the Time Exponent Shift in the Ultra-fast NBTI of High-k/Metal gated p-CMOSFETs. International Symposium on the Physical and Failure Analysis of Integrated Circuits.DOI
213. Shu-Juan Mao, Guilei Wang, Jing Xu, Xue Luo, Dan Zhang, Ning-Yuan Duan, Shi Liu, Wen-Wu Wang, Da-Peng Chen, Jun-Feng Li, Chao Zhao, Tianchun Ye, Jun Luo (2018). Impact of Ge Preamorphization Implantation on Both the Formation of Ultrathin TiSix and the Specific Contact Resistivity in TiSix/n-Si Contacts. IEEE Transactions on Electron Devices.DOI
214. 叶甜春（2017）. 中国集成电路产业谋求大发展要再定位. 《集成电路应用》.
215. 叶甜春，陈大鹏，王何轶，王艳（2017）. 物联网产业化新进展. 《科技中国》.
216. 叶甜春（2017）. 芯片产业“弯道超车”需要原始创新. 《集成电路应用》.
217. 陈浪，乐建连，甘业兵，钱敏，叶甜春（2017）. 一种2.4 GHz CMOS射频前端电路. 《微电子学》.
218. Yanrong Wang, Hong Yang, Hao Xu, Weichun Luo, Luwei Qi, Shuxiang Zhang, Wenwu Wang, Yan Li Jiang, Huilong Zhu, Chao Zhao, Dapeng Chen, Tianchun Ye (2017). Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process. Chinese Physics B.DOI
219. 朱铁柱，莫太山，叶甜春（2017）. 2.5 Gbit/s无电感高灵敏度宽动态范围前置放大器设计. 《中南大学学报(自然科学版)》.
220. 朱铁柱，莫太山，叶甜春（2017）. 双环功率控制的突发模式激光驱动器. 《红外与激光工程》.
221. Zhen Liu, Tianchun Ye, Bin Wu, Xiao Ge Zhu (2017). An improved implementation of MAX* operation for Turbo decoder. IEICE Electronics Express.DOI
222. Hailiang Li, Tianchun Ye, Lina Shi, Changqing Xie (2017). Fabrication of ultra-high aspect ratio (>160:1) silicon nanostructures by using Au metal assisted chemical etching. Journal of Micromechanics and Microengineering.DOI
223. Lisong Dong, Wenhui Chen, Taian Fan, Xiaojing Su, Yayi Wei, Tianchun Ye (2017). Mitigating the influence of wafer topography on the implantation process in optical lithography. Optics Letters.DOI
224. Xu Qian, Bin Wu, Tianchun Ye (2017). QoS-Aware A-MPDU Retransmission Scheme for 802.11n/ac/ad WLANS. IEEE Communications Letters.DOI
225. Xu Qian, Bin Wu, Tianchun Ye (2017). Enhanced aggregation scheduler design in industrial 802.11 devices. Electronics Letters.DOI
226. Zhen Liu, Bin Wu, Tianchun Ye (2017). Improved Turbo Decoding With Multivariable Taylor Series Expansion. IEEE Communications Letters.DOI
227. Guilei Wang, Jun Luo, Jinbiao Liu, Tao Yang, Yefeng Xu, Junfeng Li, Huaxiang Yin, Yan Li Jiang, Huilong Zhu, Chao Zhao, Tianchun Ye, Henry H. Radamson (2017). pMOSFETs Featuring ALD W Filling Metal Using SiH4 and B2H6 Precursors in 22 nm Node CMOS Technology. Nanoscale Research Letters.DOI
228. Libin Zhang, Lisong Dong, Xiaojing Su, Yayi Wei, Tianchun Ye (2017). New alignment mark designs in single patterning and self-aligned double patterning. Microelectronic Engineering.DOI
229. Xiaolei Wang, Jinjuan Xiang, Kai Han, Shengkai Wang, Jun Luo, Chao Zhao, Tianchun Ye, Henry H. Radamson, Eddy Roger Simoen, Wenwu Wang (2017). Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFETs. IEEE Transactions on Electron Devices.DOI
230. Libin Zhang, Yaobin Feng, Lisong Dong, Xiaojing Su, Zhengguo Tian, Chao Fang, Yayi Wei, Tianchun Ye (2017). New alignment mark design structures for higher diffraction order wafer quality enhancement. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE.DOI
231. Xiaojing Su, Lisong Dong, Jiaxin Lin, Ying Chen, Yayi Wei, Tianchun Ye, Chunshan Du, Feng Shao, Recco Zhang, Yu Zhu, Junjiang Lei, Minghui Fan (2017). Hotspots fixing flow in NTD process by using DTCO methodology at 10nm metal 1 layer. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE.DOI
232. Lijun Zhao, Ying Chen, Xiaojing Su, Yajuan Su, Yayi Wei, Tianchun Ye (2017). Enhancing manufacturability of standard cells by using DTCO methodology. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE.DOI
233. Xia Kaifeng, Bin Wu, Tao Xiong, Tianchun Ye (2017). A Memory-Based FFT Processor Design With Generalized Efficient Conflict-Free Address Schemes. IEEE Transactions on Very Large Scale Integration (VLSI) Systems.DOI
234. Guilei Wang, Jun Luo, Changliang Qin, Renrong Liang, Yefeng Xu, Jinbiao Liu, Junfeng Li, Huaxiang Yin, Yan Li Jiang, Huilong Zhu, Jun Xu, Chao Zhao, Henry H. Radamson, Tianchun Ye (2017). Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors. Nanoscale Research Letters.DOI
235. Xiaolei Wang, Jinjuan Xiang, Chao Zhao, Tianchun Ye, Wenwu Wang (2017). Oxidation mechanism and surface passivation of Germanium by ozone. IEEE Electron Devices Technology and Manufacturing Conference (EDTM).DOI
236. Shujuan Mao, Jing Xu, Guilei Wang, Jun Luo, Ningyuan Duan, Eddy Roger Simoen, Henry H. Radamson, Wenwu Wang, Dapeng Chen, Junfeng Li, Chao Zhao, Tianchun Ye (2017). On the Manifestation of Ge Pre-Amorphization Implantation (PAI) in Forming Ultrathin TiSixfor Ti Direct Contact on Si in Sub-16/14 nm Complementary Metal-Oxide-Semiconductor (CMOS) Technology Nodes. ECS Journal of Solid State Science and Technology.DOI
237. J. B. Liu, Jun Luo, Eddy Roger Simoen, Guilei Wang, Jinjuan Xiang, Junfeng Li, Chao Feng Zhao, Tianchun Ye (2017). Hot Implantations of P into Ge: Impact on the Diffusion Profile. ECS Journal of Solid State Science and Technology.DOI
238. Ningyuan Duan, Guilei Wang, Jun Luo, Shujuan Mao, Xue Gang Luo, Jing Xu, Wenwu Wang, Shi Liu, Dapeng Chen, Junfeng Li, Chao Zhao, Tianchun Ye (2017). A Modified Scheme to Reduce the Specific Contact Resistivity of NiSi/Si Contacts by Means of Dopant Segregation Technique. ECS Journal of Solid State Science and Technology.DOI
239. Kai-Feng XIA, Bin Wu, Tao XIONG, Tianchun Ye, Chengying Chen (2017). A Hardware Efficient Multiple-Stream Pipeline FFT Processor for MIMO-OFDM Systems. IEICE Transactions on Fundamentals of Electronics Communications and Computer Sciences.DOI
240. Li-Jun Zhao, Lisong Dong, Wen-Hui Chen, Yayi Wei, Tianchun Ye, Li-Wan Yue, Yun-Tao Jiang, Qiang Wu (2017). Necessity of resist model in source mask optimization for negative tone development process.DOI
241. Zhi-Qian Zhao, Xiao-Lei Wang, Jing Zhang, Chao Zhao, Tianchun Ye, Wen-Wu Wang (2017). Experimental investigation on growth mechanism of GeOx layer formed by plasma post oxidation based on angle resolved X-ray photoelectron spectroscopy. IEEE Electron Devices Technology and Manufacturing Conference.DOI
242. Li-Xing Zhou, Xiao-Lei Wang, Xue-Li Ma, Jin-Juan Xiang, Hong Yang, Chao Zhao, Tianchun Ye, Wen-Wu Wang (2017). Hole mobility degradation by remote Coulomb scattering and charge distribution in Al2O3/GeOx gate stacks in bulk Ge pMOSFET with GeOx grown by ozone oxidation.DOI
243. Yong-Hao Liang, Enliang Wang, Yilei Hua, Chang-Qing Xie, Tianchun Ye (2017). Single-focus spiral zone plates. Optics Letters.DOI
244. 罗彦彬，乐建连，甘业兵，钱敏，叶甜春（2016）. 一种低温度系数的全CMOS基准电流源. 《微电子学》.
245. 韩茜茜，欧毅，李志刚，欧文，叶甜春（2016）. Band 40波段体声波滤波器的设计. 《微纳电子技术》.
246. 叶甜春（2016）. 智能化趋势下的集成电路产业发展机遇. 《集成电路应用》.
247. 叶甜春（2016）. “十三五”期间中国集成电路制造产业链发展的思考. 《集成电路应用》.
248. Xixi Han, Yi Ou, Zhigang Li, Wen Ou, Dapeng Chen, Tianchun Ye (2016). Simulation and fabrication of thin film bulk acoustic wave resonator. Journal of Semiconductors.DOI
249. Hao Xu, Hong Yang, Yanrong Wang, Wenwu Wang, Weichun Luo, Luwei Qi, Junfeng Li, Chao Zhao, Dapeng Chen, Tianchun Ye (2016). Temperature- and voltage-dependent trap generation model in high- k metal gate MOS device with percolation simulation. Chinese Physics B.DOI
250. 潘志鹏，吴斌，叶甜春（2016）. 适用于IEEE 802.11ac协议的高效速率自适应算法. 《西安电子科技大学学报》.
251. 潘志鹏，吴斌，叶甜春（2016）. 多速率WLAN网络的时间公平调度算法. 《西安电子科技大学学报》.
252. Hao Xu, Hong Yang, Weichun Luo, Yefeng Xu, Yanrong Wang, Bo Tang, Wenwu Wang, Luwei Qi, Junfeng Li, Yan Li Jiang, Huilong Zhu, Chao Zhao, Dapeng Chen, Tianchun Ye (2016). Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high- k metal gate NMOSFET with kMC TDDB simulations. Chinese Physics B.DOI
253. Hao Xu, Hong Yang, Yanrong Wang, Wenwu Wang, Guangxing Wan, Shangqing Ren, Weichun Luo, Luwei Qi, Chao Zhao, Dapeng Chen, Xinyu Liu, Tianchun Ye (2016). Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks. Journal of Semiconductors.DOI
254. Yuan Teng, Yangjun Zhu, Zhengsheng Han, Tianchun Ye (2016). Theoretical modification of the negative Miller capacitance during the switching transients of IGBTs. Journal of Semiconductors.DOI
255. 叶甜春（2016）. 传感产业的“三链融合”. 《高科技与产业化》.
256. 孙裕文，李世光，叶甜春，宗明成（2016）. 纳米光刻中调焦调平测量系统的工艺相关性. 《光学学报》.
257. Miao Xu, Huilong Zhu, Yanbo Zhang, Yanbo Zhang, Qiuxia Xu, Yongkui Zhang, Yongkui Zhang, Changliang Qin, Qingzhu Zhang, Huaxiang Yin, Hao Xu, Shuai Chen, Jun Luo, Chunlong Li, Chao Zhao, Tianchun Ye (2016). Two methods of tuning threshold voltage of bulk FinFETs with replacement high-k metal-gate stacks. Solid-State Electronics.DOI
258. Lisong Dong, Libin Zhang, Xiaojing Su, Zhiyang Song, Yayi Wei, Tianchun Ye (2016). Optimization of resist parameters to improve the profile and process window of the contact pattern in advanced node. Journal of Micro/Nanopatterning Materials and Metrology.DOI
259. Qingzhu Zhang, Huaxiang Yin, Jun Luo, Hong Yang, Lingkuan Meng, Yudong Li, Zhenhua Wu, Yanbo Zhang, Yongkui Zhang, Changliang Qin, Junjie Li, Jianfeng Gao, Guilei Wang, Wenjuan Xiong, Jinjuan Xiang, Zhangyu Zhou, Shujian Mao, Gaobo Xu, Jinbiao Liu, Yang Qu, Tao Yang, Junfeng Li, Qiuxia Xu, Jiang Yan, Huilong Zhu, Chao Feng Zhao, Tianchun Ye (2016). FOI FinFET with ultra-low parasitic resistance enabled by fully metallic source and drain formation on isolated bulk-fin. Technical digest - International Electron Devices Meeting/Technical digest.DOI
260. Lijun Zhao, Yayi Wei, Tianchun Ye (2016). Analysis of multi-e-beam lithography for cutting layers at 7-nm node. Journal of Micro/Nanopatterning Materials and Metrology.DOI
261. Ningyuan Duan, Jun Luo, Guilei Wang, Jinbiao Liu, Eddy Roger Simoen, Shujuan Mao, Henry H. Radamson, Xiaolei Wang, Junfeng Li, Wenwu Wang, Chao Zhao, Tianchun Ye (2016). Reduction of NiGe/n- and p-Ge Specific Contact Resistivity by Enhanced Dopant Segregation in the Presence of Carbon During Nickel Germanidation. IEEE Transactions on Electron Devices.DOI
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348. 蔺晓龙，何文涛，徐建华，叶甜春（2013）. GNSS接收机中窄带干扰检测算法. 《计算机仿真》.
349. 胡晓峰，何文涛，徐建华，叶甜春（2013）. 基于相位折叠的串行GPS L2C快速捕获算法. 《计算机仿真》.
350. 翟昆朋，何文涛，徐建华，叶甜春（2013）. 捷联式惯性导航系统轨迹发生器设计与仿真. 《计算机仿真》.
351. 窦丙飞，贾锐，李昊峰，陈晨，孟彦龙，丁武昌，金智，刘新宇，叶甜春（2013）. 银硅纳米颗粒用于制备晶体硅太阳电池超高效陷光的研究. 《太阳能》.
352. 蔺晓龙，何文涛，徐建华，叶甜春（2013）. 北斗卫星导航接收机中类相干积分算法. 《计算机仿真》.
353. 周仁杰，莫太山，甘业兵，钱敏，马成炎，叶甜春（2013）. 用于5.8GHz ETC超低功耗唤醒接收机模拟前端. 《半导体技术》.
354. 张书磊，莫太山，叶甜春（2013）. 1.25Gb/s CMOS高灵敏度宽动态范围跨阻放大器. 《半导体光电》.
355. 周仁杰，项勇，王虹，甘业兵，钱敏，马成炎，叶甜春 (2013). A sub-1-dB noise figure monolithic GNSS LNA. Journal of Semiconductors.
356. 尹喜珍，马成炎，叶甜春，肖时茂，于云丰（2013）. 高灵敏度GNSS接收机频率合成器设计. 《浙江大学学报(工学版)》.
357. Guilei Wang, Qiang Xu, Tao Yang, Jun Luo, Jinjuan Xiang, Jing Xu, Gaobo Xu, Chunlong Li, Junfeng Li, Jiang Yan, Chao Zhao, Dapeng Chen, Tianchun Ye (2013). Application of Atomic Layer Deposition Tungsten (ALD W) as Gate Filling Metal for 22 nm and Beyond Nodes CMOS Technology. ECS Transactions.DOI
358. Songang Peng, Zhi Hao Jin, Peng Ma, Guanghui Yu, Jingyuan Shi, Dayong Zhang, Jiao Chen, Xinyu Liu, Tianchun Ye (2013). Heavily p-type doped chemical vapor deposition graphene field-effect transistor with current saturation. Applied Physics Letters.DOI
359. Weichun Luo, Hong Yang, Wenwu Wang, Lichuan Zhao, Hao Xu, Shangqing Ren, Bo Tang, Zhaoyun Tang, Yefeng Xu, Jing Xu, Yan Li Jiang, Chao Zhao, Dapeng Chen, Tianchun Ye (2013). Physical understanding of different drain-induced-barrier-lowering variations in high-k/metal gate n-channel metal-oxide-semiconductor-field-effect-transistors induced by charge trapping under normal and reverse channel hot carrier stresses. Applied Physics Letters.DOI
360. Jun Luo, Zhi‐Jun Qiu, Jian Hua Deng, Chao Zhao, Junfeng Li, Wenwu Wang, Dapeng Chen, Dongping Wu, Mikael Östling, Tianchun Ye, Shi‐Li Zhang (2013). Variation of Schottky barrier height induced by dopant segregation monitored by contact resistivity measurements. Microelectronic Engineering.DOI
361. Wei Juan Wang, Ling Li, Zhuoyu Ji, Tianchun Ye, Nianduan Lu, Zhigang Li, Dongmei Li, Ming Liu (2013). Modified Transmission Line Model for Bottom-Contact Organic Transistors. IEEE Electron Device Letters.DOI
362. Jun Luo, Zhi‐Jun Qiu, Jian Hua Deng, Chao Zhao, Junfeng Li, Wenwu Wang, Dapeng Chen, Dongping Wu, Mikael Östling, Tianchun Ye, Shi‐Li Zhang (2013). Effects of carbon pre-silicidation implant into Si substrate on NiSi. Microelectronic Engineering.DOI
363. Yulong Han, Zongliang Huo, Xinkai Li, Guoxing Chen, Xiaonan Yang, Dong Zhang, Yong Wang, Tianchun Ye, Ming Liu (2013). Correction to "Investigation of charge loss mechanism of thickness-scalable trapping layer by variable temperature Kelvin probe force microscopy" [Jul 13 870-872]. IEEE Electron Device Letters.DOI
364. Weichun Luo, Hong Yang, Wenwu Wang, Hao Xu, Shangqing Ren, Bo Tang, Zhaoyun Tang, Jing Liang Xu, Yan Li Jiang, Chao Zhao, Dapeng Chen, Tianchun Ye (2013). Channel Hot-Carrier degradation characteristics and trap activities of high-k/metal gate nMOSFETs. IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).DOI
365. Qidong Wang, Daniel Guidotti, Liqiang Cao, Jie Cui, Lixi Wan, Tianchun Ye (2013). High Bandwidth Silicon Millimeter Waveguides. Microwave and Optical Technology Letters.DOI
366. Yulong Han, Zongliang Huo, Xinkai Li, Guoxing Chen, Xiaonan Yang, Dong Zhang, Yong Wang, Tianchun Ye, M. Liu (2013). Investigation of charge loss mechanism of thickness-scalable trapping layer by variable temperature Kelvin probe force microscopy. IEEE Electron Device Letters.DOI
367. Jian Hua Deng, Qingbo Liu, Chao Zhao, Junfeng Li, Wenwu Wang, Dapeng Chen, Tianchun Ye, Jun Luo (2013). A modified scheme to tune the Schottky Barrier Height of NiSi by means of dopant segregation technique. Vacuum.DOI
368. Yulong Han, Zongliang Huo, Xiaonan Yang, Xinkai Li, Guoxing Chen, Dong Xiang Zhang, Chenjie Wang, Ziyu Liu, Tianchun Ye, Ming Liu, Yuan Yao, Richeng Yu (2013). Visualization on charge distribution behavior in thickness-scalable HfO2 trapping layer by in-situ electron holography and Kelvin Probe Force Microscopy technology. IEEE International Memory Workshop (IMW).DOI
369. Jian Shi, Shimao Xiao, Yunfeng Yu, Wei Huang, Wenguang Pan, Tianchun Ye, Min Qian, Xiaofeng He, Chengyan Ma (2013). A 5.8GHz integrated CMOS transmitter for Chinese electronic toll collection system. IEEE International Symposium on Circuits and Systems proceedings.DOI
370. Qidong Wang, Daniel Guidotti, Jie Cui, Liqiang Cao, Tianchun Ye, Lixi Wan (2013). A highly integratable millimeter-wave silicon waveguide array for Terabit application. 2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).DOI
371. Shibing Long, Xiaojuan Lian, Tianchun Ye, C. Cagli, L. Perniola, Enrique A. Miranda, Ming Liu, Jordi Suñé (2013). Cycle-to-Cycle Intrinsic RESET Statistics in ${\rm HfO}_{2}$-Based Unipolar RRAM Devices. IEEE Electron Device Letters.DOI
372. Xiaolei Wang, Jinjuan Xiang, Wenwu Wang, Jing Zhang, Kai Han, Hong Yang, Xueli Ma, Chao Zhao, Dapeng Chen, Tianchun Ye (2013). A possible origin of core-level shift in SiO2/Si stacks. Applied Physics Letters.DOI
373. Xiaolei Wang, Jinjuan Xiang, Wenwu Wang, Jing Zhang, Kai Han, Hong Yang, Xueli Ma, Chao Zhao, Dapeng Chen, Tianchun Ye (2013). Reexamination of band offset transitivity employing oxide heterojunctions. Applied Physics Letters.DOI
374. Jian Shi, Taishan Mo, Chengyan Ma, Tianchun Ye (2013). A current-shaping technique for static MOS current-mode logic prescalers. IEICE Electronics Express.DOI
375. Yi Ou, Zhigang Li, Furong Qu, Kai Yang, Yu Liu, Dapeng Chen, Tianchun Ye (2013). Investigation on Performance and Vacuum Package of MEMS Infrared Focal Plane Arrays. IEEE Electron Device Letters.DOI
376. Jin-Juan Xiang, Xiao-Lei Wang, Ting-Ting Li, Chao Zhao, Wen-Wu Wang, Jun-Feng Li, Q. Liang, Da-Peng Chen, Tianchun Ye (2013). Band Lineup Issues Related with High-k/SiO2/Si Stack.DOI
377. Xue-Li Ma, Xiao-Lei Wang, Kai Han, Wen-Wu Wang, Hong Yang, Chao Zhao, Da-Peng Chen, Tianchun Ye (2013). Remote Scavenging Technology using Ti/TiN Capping Layer Interposed in a Metal/High-k Gate Stack.DOI
378. Jun Luo, Zhi-Jun Qiu, Jian Deng, Chao Zhao, Jun-Feng Li, Wen-Wu Wang, Da-Peng Chen, Dongping Wu, Michael Östling, Tianchun Ye, Shi-Li Zhang (2013). Effects of Prior Carbon Ion Implant in Si substrate on Ni silicidation.
379. Xue-Li Ma, Xiao-Lei Wang, Kai Han, Wen-Wu Wang, Hong Yang, Chao Zhao, Da-Peng Chen, Tianchun Ye (2013). Electrical Properties and Interfacial Structures of High-k/Metal Gate MOSCAP Using Ti/TiN Scavenging Stack between High-κ Dielectric and Metal Gate.DOI
380. Shang-Qing Ren, Hong Yang, Wen-Wu Wang, Hao Xu, Wei-Chun Luo, Bo Tang, Zhao-Yun Tang, Jing Xu, Jiang Yan, Chao Zhao, Tianchun Ye (2013). Negative Bias Temperature Instability Characteristics and Degradation Mechanisms of pMOSFET with High-k/Metal Gate Stacks.DOI
381. Miao Xu, Hui-Long Zhu, Wu Hao, Q. Liang, Haizhou Yin, Dapeng Cheng, Tianchun Ye (2013). Simulations of Bulk FinFETs with Body Gate Controlling Punch through Leakage.DOI
382. Kai Han, Xiao-Lei Wang, Wen-Wu Wang, Jing Zhang, Jin-Juan Xiang, Hong Yang, Zhao Chao, Da-Peng Chen, Tianchun Ye (2013). Schottky Barrier Height at TiN/HfO2 Interface of TiN/HfO2/SiO2/Si Structure.DOI
383. Hao Xu, Hong Yang, Shang-Qing Ren, Wei-Chun Luo, Yan-Rong Wang, Kai Han, Jin-Juan Xiang, Xiao-Lei Wang, Xue-Li Ma, Wen-Wu Wang, Chao Zhao, Da-Peng Chen, Tianchun Ye (2013). Electrical and TDDB Characteristics of High-k/Metal Gate MOS Capacitors with Different RTO Temperatures.DOI
384. X. Tong, Q. Liang, H. Zhong, Hui-Long Zhu, Da-Peng Chen, Tianchun Ye (2013). On the design of 2-port SRAM memory cells using PNPN diodes for VLSI application.
385. 赵慧冬，黑勇，乔树山，叶甜春（2012）. 基于导频辅助的低压电力线通信系统信道估计算法. 《微电子学与计算机》.
386. 潘志鹏，吴斌，杨坤，叶甜春（2012）. 基于AHB总线的灵活可配置WLAN芯片架构设计. 《电子技术应用》.
387. 金亮良，何文涛，徐建华，叶甜春，翟昆朋，蔺晓龙（2012）. 一种低成本GPS/DR组合导航系统设计. 《计算机工程》.
388. 何晓丰，莫太山，王晴晖，马成炎，叶甜春（2012）. 高精度宽带数字控制可变增益放大器的设计. 《微电子学》.
389. 段炼，黄伟，马成炎，叶甜春（2012）. ESD保护低噪声放大器的分析与设计. 《微电子学》.
390. 叶甜春（2012）. 中国物联网产业链发展与建设. 《物联网技术》.
391. 段炼，黄伟，马成炎，何晓丰，金玉花，叶甜春 (2012). A single-to-differential low-noise amplifier with low differential output imbalance. Journal of Semiconductors.
392. 何晓丰，莫太山，马成炎，叶甜春 (2012). An output amplitude configurable wideband automatic gain control with high gain step accuracy. Journal of Semiconductors.
393. 岳会会，贾锐，陈晨，窦丙飞，李昊峰，金智，刘新宇，叶甜春（2012）. 超低减反纳米结构对晶体硅太阳电池性能的影响. 《太阳能学报》.
394. 何晓丰，莫太山，马成炎，叶甜春，甘业兵，钱敏（2012）. 带有低噪声单端转差分电路的射频增益可控放大器. 《电子与信息学报》.
395. 尹喜珍，肖时茂，马成炎，叶甜春（2012）. 一种应用于全球导航卫星系统接收机的低功耗宽带压控振荡器. 《电子与信息学报》.
396. Jiao Chen, Zhi Hao Jin, Peng Ma, Hong Wang, Haomin Wang, Jingyuan Shi, Songang Peng, Xinyu Liu, Tianchun Ye (2012). Depressed scattering across grain boundaries in single crystal graphene. Applied Physics Letters.DOI
397. Jian Hua Deng, Jun Luo, Chao Zhao, Junfeng Li, Wenwu Wang, Dapeng Chen, Tianchun Ye, Hanming Wu (2012). A more CMOS process compatible scheme to tune the Schottky Barrier Height of NiSi to electrons by means of dopant segregation (DS) technique. IEEE International Conference on Solid-State and Integrated Circuit Technology.DOI
398. Wenbiao Ruan, Lan Chen, Tianyu Ma, Jingjing Fang, He Zhang, Tianchun Ye (2012). Optimization of a Cu CMP process modeling parameters of nanometer integrated circuits. Journal of Semiconductors.DOI
399. Jian Shi, Taishan Mo, Jianlian Le, Yebing Gan, Chengyan Ma, Tianchun Ye (2012). A high-efficiency, low-noise power solution for a dual-channel GNSS RF receiver. Journal of Semiconductors.DOI
400. Peng Ma, Zhi Hao Jin, Jian-Nan Guo, Hongliang Pan, Xinyu Liu, Tianchun Ye, Yuping Jia, Liwei Guo, Xiaolong Chen (2012). Top-gated graphene field-effect transistors on SiC substrates. Chinese Science Bulletin.DOI
401. Guang Zhu, Daniel Guidotti, Fujiang Lin, Qidong Wang, Jie Cui, Qian Wang, Liqiang Cao, Tianchun Ye, Lixi Wan (2012). Millimeter wave interchip communication.DOI
402. Peng Ma, Zhi Hao Jin, Jian-Nan Guo, Hongliang Pan, Xinyu Liu, Tianchun Ye, Hong Wang, Guanzhong Wang (2012). Chemical Vapour Deposition Graphene Radio-Frequency Field-Effect Transistors. Chinese Physics Letters.DOI
403. Jinjuan Xiang, Xiaolei Wang, Tingting Li, Chao Feng Zhao, Wenwu Wang, Junfeng Li, Dapeng Chen, Tianchun Ye (2012). Band alignment of high-k dielectric on SiO2/Si stack. International Workshop on Junction Technology.DOI
404. Xuan Xiong Zhang, Yi Ou, Fan Yang, Tianchun Ye, Song Lin Zhuang (2012). The study on the micro-voids of InP/Si and InP/SiO2 wafer bonding by infrared transmission and scanning acoustic microscopy. IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D).DOI
405. Xiaolei Wang, Wenwu Wang, Kai Han, Hong Yang, Jing Zhang, Xueli Ma, Jinjuan Xiang, Chao Zhao, Dapeng Chen, Tianchun Ye (2012). Investigation of band structure at metal-gate/high-k interface of metal oxide semiconductor device with high-k and metal gate stack. International Workshop on Junction Technology.DOI
406. Qingqing Liang, Qiuxia Xu, Huilong Zhu, Huicai Zhong, Junfeng Li, Chao Zhao, Dapeng Chen, Tianchun Ye (2012). Interfacial Elastic Dipoles: A New EOT Shifting Mechanism in HKMG Devices. IEEE Electron Device Letters.DOI
407. Xizhen Yin, Shimao Xiao, Yuhua Jin, Qiwu Wu, Chengyan Ma, Tianchun Ye (2012). A constant loop bandwidth fractional-Nfrequency synthesizer for GNSS receivers. Journal of Semiconductors.DOI
408. X. L. Wang, W. W. Wang, Kai Han, Jing Zhang, J. J. Xiang, X. L., Hao Yang, Dalong Chen, Tianchun Ye (2012). Systematical investigation and physical mechanism of HfO2 gate stacks band alignment, VFB shift and Fermi level pinning.DOI
409. Xiaolei Wang, Kai Han, Wenwu Wang, Jinjuan Xiang, Hong Yang, Jing Zhang, Xueli Ma, Chao Zhao, Dapeng Chen, Tianchun Ye (2012). Band alignment of HfO2 on SiO2/Si structure. Applied Physics Letters.DOI
410. Hao Wu, Miao Xu, Weiping Xiao, Binneng Wu, Huilong Zhu, Qingqing Liang, Lichuan Zhao, Huicai Zhong, Zhijiong Luo, Haizhou Yin, H.Y. Yu, Dapeng Cheng, Tianchun Ye (2012). A Simulation Study of Substrate Dopant Engineering for Extremely Thin SOI (ET-SOI) MOSFETs with Ultra Thin BOX (UT-BOX). ECS Transactions.DOI
411. Xiaolei Wang, Kai Han, Wenwu Wang, Hong Yang, Jing Zhang, Xueli Ma, Jinjuan Xiang, Dapeng Chen, Tianchun Ye (2012). Band alignment of TiN/HfO2 interface of TiN/HfO2/SiO2/Si stack. Applied Physics Letters.DOI
412. Lingkuan Meng, Huaxiang Yin, Dapeng Chen, Tianchun Ye (2012). Metal gate etch-back planarization technology. Journal of Semiconductors.DOI
413. Xiaolong Ma, Huaxiang Yin, Zuozhen Fu, Haiqiang Zhang, Xu Zhang, Jiang Yan, Chao Feng Zhao, Dapeng Chen, Tianchun Ye (2012). Diamond-Like Carbon Thin Films with Extremely High Compressive Stress (>8~12GPa) for Advanced CMOS Strain Engineering. MRS Proceedings.DOI
414. Tianchun Ye (2012). Analysis and Design of Low Noise Amplifier with ESD Protection.
415. X. Tong, Q. Liang, H. Zhong, Hui-Long Zhu, Da-Peng Chen, Tianchun Ye (2012). A New SRAM Cell Using the Optimized PNPN Diode.DOI
416. Chao-Qun Gao, Bin-Bin Jiao, Ruiwen Liu, Hai-Ping Shang, Da-Peng Chen, Tianchun Ye (2012). Non-refrigeration infrared imaging focal plane array detector.
417. Ruiwen Liu, Bin-Bin Jiao, Da-Peng Chen, Tianchun Ye (2012). Method and structure for encapsulating transparent substrate detector chip.
418. Xiao-Lei Wang, Wen-Wu Wang, Kai Han, Jing Zhang, Jin-Juan Xiang, Xue-Li Ma, Hong Yang, Da-Peng Chen, Tianchun Ye (2012). Comprehensive Demonstration and Physical Origin of HfO2 Gate Stacks: Band Alignment, VFB Shift and Fermi Level Pinning.DOI
419. Zhang-Liang Qin, Tianchun Ye, Hua-Xiang Yin (2012). Of the source / drain regions closer mos device and a method for manufacturing a channel region.
420. Xiao-Long Ma, Hua-Xiang Yin, Zuo-Zhen Fu, Xu Zhang, K. Du, Jiang Yan, Chao Zhao, Da-Peng Chen, Tianchun Ye (2012). Investigation of Tetrahedral Amorphous Carbon (ta-C) as Diffusion Barrier for Advanced Cu Metallization Technology.DOI
421. 邢钊，贾锐，吴大卫，孟彦龙，武德起，陈宝钦，刘新宇，叶甜春（2011）. 基于高效太阳电池的光诱导镀技术. 《微纳电子技术》.
422. 窦丙飞，贾锐，陈晨，李昊峰，岳会会，陈宝钦，刘新宇，叶甜春（2011）. 用于高效太阳电池的硅基微纳结构及制备. 《微纳电子技术》.
423. 庄海孝，马成炎，叶甜春，黄伟，潘文光，于云丰，武振宇（2011）. 多模式卫星导航接收机中双频段LNA设计. 《微电子学与计算机》.
424. 何文涛，徐建华，叶甜春（2011）. 互相关干扰下的GNSS弱信号检测算法. 《电子学报》.
425. 何文涛，徐建华，叶甜春，殷明（2011）. 一种基于数字匹配滤波的高灵敏度GNSS信号位同步算法. 《微电子学与计算机》.
426. Hongliang Pan, Zhi Hao Jin, Peng Ma, Jian-Nan Guo, Xinyu Liu, Tianchun Ye, Jia Zhao Li, Shaobo Dun, Zhihong Feng (2011). Wafer-Scale Gigahertz Graphene Field Effect Transistors on SiC Substrates. Chinese Physics Letters.DOI
427. Chenluan Wang, Lu Huang, Nan Chen, Tianchun Ye, Fujiang Lin (2011). A 0.65 mW 2.3–2.5GHz low phase noise LC-VCO with adaptive body biasing technique. IEEE International Symposium on Radio-Frequency Integration Technology (RFIT).DOI
428. Fan Yang, Xuan Xiong Zhang, Tianchun Ye, Song Lin Zhuang (2011). The surface blistering kinetics and the H-platelet evolution in H-implanted germanium. Physica B Condensed Matter.DOI
429. Wenbiao Ruan, Lan Chen, Zhigang Li, Tianchun Ye, Tianyu Ma, Qiang Wang (2011). Effects of pattern characteristics on the copper electroplating process. Journal of Semiconductors.DOI
430. Binneng Wu, Weiping Xiao, Huilong Zhu, Qingqing Liang, Hao Wu, Haizhou Yin, Zhijiong Luo, H.Y. Yu, Dapeng Chen, Tianchun Ye (2011). Scaling MOSFETs with Self-aligned Super-Steep-Retrograded Halo (3SRH). ECS Transactions.DOI
431. Miao Xu, Qingqing Liang, Huilong Zhu, Haizhou Yin, Zhijiong Luo, Dapeng Chen, Tianchun Ye (2011). Simulations of FDSOI CMOS with Sharing Contact between Source/Drain and Back Gate. ECS Transactions.DOI
432. Meng Li, Qingqing Liang, Huilong Zhu, Huicai Zhong, Dapeng Chen, Tianchun Ye (2011). Process Impact and Design Optimization on the Soft Yield of 25nm FinFET SRAM Cells. ECS Transactions.DOI
433. Yunfeng Yu, Tianchun Ye, Chengyan Ma (2011). Optimization and design of a novel prescaler and its application to GPS receivers. Science China Information Sciences.DOI
434. Weilong Li, Rui Jia, Chen Chen, Haofeng Li, Xinyu Liu, Huihui Yue, Wuchang Ding, Tianchun Ye, Seiya Kasai, Tamotsu Hashizume, Nan-Jian Wu Nan-Jian Wu, Bingshe Xu (2011). Formation of silicon nanocrystals embedded in high-κ dielectric HfO2 and their application for charge storage. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena.DOI
435. Xiaofeng He, Taishan Mo, Chengyan Ma, Tianchun Ye (2011). A novel analog/digital reconfigurable automatic gain control with a novel DC offset cancellation circuit. Journal of Semiconductors.DOI
436. Fan Yang, Xuan Xiong Zhang, Tianchun Ye, Song Lin Zhuang (2011). The Investigation on Surface Blistering of Ge Implanted by Hydrogen under the Low Temperature Annealing. Journal of The Electrochemical Society.DOI
437. Y. Ou, Wen-Wu Wang, Da-Peng Chen, Tianchun Ye (2011). Suspension structure micro-electro-mechanical-systems (MEMS) device and manufacturing method thereof.
438. Q. Liang, Qiang Xu, Gao-Bo Xu, H. Zhong, Hui-Long Zhu, Jian-Feng Li, Chao Zhao, Jiang Yan, Da-Peng Chen, Tianchun Ye (2011). A new EOT shrinking mechanism in TiN/HfLaON HKMG MOSFET: Experimental and ab-initio study. International Semiconductor Device Research Symposium.DOI
439. 叶甜春，封松林 叶甜春（2010）. 物联网/传感网发展之路初探. 《中国科学院院刊》, No. 1.下载原文
440. 武振宇，马成炎，叶甜春，庄海孝（2010）. 一种适用于低中频和零中频GPS接收机的CMOS混频器. 《微电子学》.
441. 陈晨，贾锐，朱晨昕，李维龙，李昊峰，刘明，刘新宇，叶甜春（2010）. 异质结及其技术在新型硅基太阳能电池中的应用. 《物理》.
442. 陈学，徐建华，叶甜春，李思超（2010）. 基于FFT的微弱GPS信号捕获算法. 《微电子学与计算机》.
443. 武振宇，马成炎，叶甜春（2010）. 10-WD类音频功放输出级电路的设计. 《微电子学与计算机》.
444. 何文涛，徐建华，叶甜春（2010）. 正交信号幅度的快速近似计算方法. 《微电子学与计算机》.
445. 黄伟，庄海孝，马成炎，叶甜春（2010）. 应用于双频GPS接收机的CMOS低噪声放大器设计. 《微电子学与计算机》.
446. 何文涛，徐建华，叶甜春（2010）. GPS弱信号的自适应载噪比估计算法. 《电子技术应用》.
447. 潘文光，于云丰，马成炎，叶甜春（2010）. 一种增益可控音频前置放大器电路的设计. 《微电子学》.
448. 黄伟，马成炎，叶甜春（2010）. 大功率低THD+N的D类音频功率放大器. 《微电子学》.
449. 武振宇，马成炎，叶甜春，庄海孝（2010）. 一种可切换的双频段CMOS低噪声放大器. 《微电子学》.
450. 于云丰，马成炎，叶甜春（2010）. 基于新型双模分频器的低功耗多模分频器. 《微电子学》.
451. 武振宇，马成炎，叶甜春（2010）. 一种低功耗快速起振晶体振荡器. 《微电子学》.
452. 岳会会，贾锐，陈晨，李昊峰，刘新宇，叶甜春，钟圣荣（2010）. 纳米线在新型太阳电池中的应用研究. 《微纳电子技术》.
453. 庄海孝，马成炎，叶甜春，黄伟（2010）. 一种用于大功率D类功率放大器的快速启动LDO. 《微电子学》.
454. 潘文光，甘业兵，马成炎，叶甜春（2010）. 一种射频前端宽带复数滤波器电路的设计. 《微电子学》.
455. Sha-Li Shi, Da-Peng Chen, Yu-Peng Jing, Y. Ou, Tianchun Ye, Qiu-Xia Xu (2010). A novel method for sacrificial layer release in MEMS devices fabrication.DOI
456. 黄伟，马成炎，叶甜春（2010）. 应用于无线传感网络SoC的逐次逼近A/D转换器. 《微电子学》.
457. Jian Xin Shen, Xuan Xiong Zhang, Tianchun Ye, Songlin Zhuang (2010). Ge/SiO2 low temperature wafer bonding. IEEE International Conference on Solid-State and Integrated Circuit Technology.DOI
458. Zhou Junxiong, Lan Chen, Wenbiao Ruan, Zhigang Li, Weixiang Shen, Tianchun Ye (2010). Dummy fill effect on CMP planarity. Journal of Semiconductors.DOI
459. Xuanxiong Zhang, Tianchun Ye, Songlin Zhuang, Jiwei Jiao (2010). The Characteristics of Interface Microstructures in Germanium/SiO2 Low Temperature Wafer Bonding. ECS Transactions.DOI
460. Chen Pufeng, Zhiqiang Li, Wang Xiaosong, Zhang Haiying, Tianchun Ye (2010). A 6–9 GHz 5-band CMOS synthesizer for MB-OFDM UWB. Journal of Semiconductors.DOI
461. Yunfeng Yu, Yue Jian-lian, Xiao Shimao, Haixiao Zhuang, Chengyan Ma, Tianchun Ye (2010). A low-power CMOS frequency synthesizer for GPS receivers. Journal of Semiconductors.DOI
462. Chen Pufeng, Zhang Haiying, Tianchun Ye (2010). A 1.5 V 7.656 GHz PLL with I/Q outputs for a UWB synthesizer. Journal of Semiconductors.DOI
463. Shi Sha-Li, Dapeng Chen, Yi Ou, Yupeng Jing, Xu Qiuxia, Tianchun Ye (2010). A novel anti-shock silicon etching apparatus for solving diaphragm release problems. Chinese Physics B.DOI
464. Jianyu Fu, Dapeng Chen, Tianchun Ye (2010). Study on electrothermally actuated cantilever array for nanolithography. Science China Technological Sciences.DOI
465. Xiao Shimao, Yunfeng Yu, Chengyan Ma, Tianchun Ye, Ming Qiang Yin (2010). A low power wide-band CMOS PLL frequency synthesizer for portable hybrid GNSS receiver. Journal of Semiconductors.DOI
466. Tianchun Ye (2010). A Mis-matching Tolerant Zero-IF Mixer for GPS Application.
467. Tianchun Ye (2010). A Low Power Complex Filter Design with Automatic Frequency Tuning.
468. Tianchun Ye (2010). High Power Class D Audio Amplifier with Low THD+N.
469. Xiao Shimao, Chengyan Ma, Tianchun Ye (2010). Design of Low Power Wide Band CMOS LC-VCO. Research & Progress of SSE Solid State Electronics.
470. Wei Huang, MA Cheng-yan, Tianchun Ye (2010). Successive Approximation A/D Converter for Wireless Sensor Network SoC.
471. Tianchun Ye (2010). Design of Wideband Complex Filter for RF Front End.
472. Xu Yan, Dong-Mei Li, Ming Liu, Tianchun Ye (2010). A new saw device with tellurium sensing film for NO2 detection.DOI
473. 王云峰，叶青，满家汉，叶甜春（2009）. 3.5GHz锁相环的设计. 《微电子学与计算机》.DOI
474. 丘聪，叶青，叶甜春（2009）. 一种有源RC复数滤波器的设计方法. 《微电子学与计算机》.
475. 叶甜春（2009）. 开启中国集成电路产业创新跨越的新机遇. 《机械设计与制造工程》.
476. 张振宇，叶甜春，徐建华（2009）. 基于中国余数定理和CSD乘法的线性卷积设计. 《微电子学与计算机》.DOI
477. 潘文光，马成炎，叶甜春，殷明（2009）. 基于gyrator结构复数滤波器稳定性分析. 《微电子学与计算机》.DOI
478. 丘聪，叶青，叶甜春，范军（2009）. 4·2GHz CMOS射频前端电路设计. 《微电子学》.
479. 庄海孝，马成炎，叶甜春，孟新（2009）. 一种应用于GPS射频前端的低噪声混频器. 《微电子学》.
480. 王建国，叶甜春，冯炳军（2009）. 一种通用宽带FM解调电路的设计. 《微电子学》.
481. 潘文光，甘业兵，马成炎，叶甜春，庄海孝，殷明（2009）. 双模式复数滤波器电路设计. 《微电子学》.
482. Yuping Wu, Lan Chen, Tianchun Ye (2009). Parallel on Analog Circuit Synthesis.DOI
483. Chen Chen, Rui Jia, Weilong Li, Haofeng Li, Tianchun Ye, Xinyu Liu, Ming Liu, Seiya Kasai, Hashizume Tamotsu, Nan-Jian Wu Nan-Jian Wu (2009). Enhanced charge storage characteristics of silicon nanocrystals fabricated by electron-beam coevaporation of Si and SiOx(x=1 or 2). Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena.DOI
484. Xiao Shimao, Chengyan Ma, Tianchun Ye (2009). A novel 2.95–3.65 GHz CMOS LC-VCO using tuning curve compensation. Journal of Semiconductors.DOI
485. Kai Yang, Zhigang Li, Yupeng Jing, Dapeng Chen, Tianchun Ye (2009). A simple prediction method for composite rectangular microcantilevers with equal width and the dimensional optimization. Microelectronics Journal.DOI
486. Chen Chen, Rui Jia, Ming Liu, Weilong Li, Chenxin Zhu, Haofeng Li, Peiwen Zhang, Changqing Xie, Qin Lin Wang, Tianchun Ye (2009). Silicon nanocrystals synthesized by electron-beam co-evaporation method and their application for nonvolatile memory. Thin Solid Films.DOI
487. Wenbiao Ruan, Lan Chen, Zhigang Li, Tianchun Ye (2009). Effects of pattern characteristics on copper CMP. Journal of Semiconductors.DOI
488. Weilong Li, Rui Jia, Ming Liu, Chen Chen, Changqing Xie, Zhu Chen-Xin, Haofeng Li, Zhang Pei-Wen, Tianchun Ye (2009). Fabrication and Characterization of Si Nanocrystals Synthesized by Electron Beam Evaporation of Si and SiO 2 Mixture. Chinese Physics Letters.DOI
489. Yunfeng Yu, Xin Meng, Shimao Xiao, Chengyan Ma, Tianchun Ye (2009). A new low-cost demodulator for 2.4 GHz ZigBee receivers. Journal of Electronics (China).DOI
490. Kai Yang, Zhigang Li, Yupeng Jing, Dapeng Chen, Tianchun Ye (2009). Research on the resonant frequency formula of V-shaped cantilevers. IEEE International Conference on Nano/Micro Engineered and Molecular Systems.DOI
491. Tianchun Ye (2009). Design of a Wideband and Low Phase Noise CMOS LC VCO. Research & Progress of SSE Solid State Electronics.
492. Xia Zhang, Binbin Jiao, Dapeng Chen, Tianchun Ye (2009). The optimizing designing of bi-material micro cantilever with adhesive layer in between and its application in an uncooled MEMS IR FPA. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE.DOI
493. Tianchun Ye (2009). Fabrication of High Aspect-ratio Hard X-Ray Zone Plates with Supporting Structures.
494. 莫太山，马成炎，叶甜春（2008）. 用于低中频GPS接收机的CMOS闪烁型模数转换器. 《微电子学与计算机》.DOI
495. 王良坤，马成炎，叶甜春（2008）. 2.4 GHz CMOS低噪声放大器设计. 《微电子学》.
496. 孟新，马成炎，叶甜春，殷明（2008）. 一种工作于亚阈值区的低功耗CMOS晶体振荡器. 《微电子学》.
497. 王明明，叶甜春，马成炎，徐建华（2008）. H.264/AVC自适应算术解码器结构设计. 《微电子学与计算机》.
498. 王良坤，马成炎，叶甜春（2008）. 低噪声和高增益CMOS下变频混频器设计. 《微电子学》.
499. 刘茂哲，李全宝，焦斌斌，高超群，罗小光，景玉鹏，叶甜春（2008）. 翘板式射频MEMS开关的研究. 《微纳电子技术》.
500. Qiuxia Xu, Gaobo Xu, Wenwu Wang, Dapeng Chen, Shali Shi, Zhengsheng Han, Tianchun Ye (2008). Study on characteristics of thermally stable HfLaON gate dielectric with TaN metal gate. Applied Physics Letters.DOI
501. Jianyu Fu, Dapeng Chen, Tianchun Ye, Binbin Jiao, Yi Ou (2008). Modeling and optimal design of multilayer thermal cantilever microactuators. Science China Technological Sciences.DOI
502. JingBo Xu, Haiying Zhang, Wenxin Wang, Liang Liu, Ming Li, Fu Xiaojun, Jiebin Niu, Tianchun Ye (2008). 200 nm gate-length GaAs-based MHEMT devices by electron beam lithography. 《中国科学通报：英文版》.DOI
503. Shali Shi, Liang Yi, Dapeng Chen, Yi Ou, Yupeng Jing, Tianchun Ye, Zhongyu Cheng (2008). Two microthermal shear stress sensors: surface micromachined and bulk-bonding micromachined. Journal of Micro/Nanopatterning Materials and Metrology.DOI
504. Daming Gao, Wuchen Wu, Qing Ye, Tianchun Ye (2008). Research on the Genetic Algorithms applied to evolvement analog IC. International Conference on Solid-State and Integrated Circuit Technology (ICSICT).DOI
505. Qin Wang, Rui Jia, Weihua Guan, Weilong Li, Qi Liu, Y. Hu, Shibing Long, Baoqin Chen, Ming Liu, Tianchun Ye, Wensheng Lü, Long Jiang (2008). Comparison of discrete-storage nonvolatile memories: advantage of hybrid method for fabrication of Au nanocrystal nonvolatile memory. Journal of Physics D Applied Physics.DOI
506. Tianchun Ye (2008). Design of a 2.4 GHz CMOS Low Noise Amplifier.
507. Tianchun Ye (2008). Design of a Low-Noise and High-Gain CMOS Down-Conversion Mixer.
508. Yi-Rong Liang, Ou Yi, Sha-Li Shi, Ma Jin, Da-Peng Chen, Tianchun Ye (2008). Micro thermal shear stress sensor based on vacuum anodic bonding and bulk-micromachining.DOI
509. 朱效立，谢常青，赵珉，陈宝钦，叶甜春，牛洁斌，张庆钊，刘明（2008）. 电子束光刻制备5000line/mm光栅掩模关键技术研究. 《微细加工技术》.
510. Jing-Bo Xu, Ming Li, Hai-Ying Zhang, Wen-Xin Wang, Jun-Jian Yin, Liang Liu, Xiao Li, Jian Zhang, Tianchun Ye (2008). 1.0μm Gate-Length GaAs MHEMT Devices and SPDT Switch MMICs.
511. 刘茂哲，景玉鹏，李全宝，焦斌斌，黄钦文，李超波，欧毅，陈大鹏，叶甜春（2007）. 基于单晶硅梁的静电RF MEMS开关. 《电子工业专用设备》.
512. 李全宝，景玉鹏，刘茂哲，陈大鹏，欧毅，马瑾，叶甜春（2007）. 电磁驱动RFMEMS开关的研究状况. 《电子工业专用设备》.
513. 易亮，欧毅，陈大鹏，叶甜春（2007）. MEMS技术在流体控制中的应用. 《电子工业专用设备》.
514. Shouguo Wang, Xiangyu Xu, Lingli Zhao, Tianchun Ye (2007). Photoresist Etching by Atmospheric Pressure Uniform-Glow Plasma. Japanese Journal of Applied Physics.DOI
515. Q. Wang, Rui Jia, W.L. Li, W.H. Guan, Qingyu Liu, Yixuan Hu, Shibing Long, Bo-you Chen, M. Liu, Tianchun Ye, Wei Lü, Lei Jiang (2007). A hybrid method for fabrication of Au nanocrystals nonvolatile memory. IEEE Conference on Nanotechnology (IEEE NANO).DOI
516. Qiuxia Xu, Xiaofeng F. Duan, Haihua Liu, Zhengsheng Han, Tianchun Ye (2007). Low-Cost and Highly Manufacturable Strained-Si Channel Technique for Strong Hole Mobility Enhancement on 35-nm Gate Length pMOSFETs. IEEE Transactions on Electron Devices.DOI
517. Xiangyu Xu, Li Li, Shouguo Wang, Lingli Zhao, Tianchun Ye (2007). Deposition of SiOxfilms with a capacitively-coupled plasma at atmospheric pressure. Plasma Sources Science and Technology.DOI
518. Qiuhong Wang, Y. F. Chen, Shibing Long, J.B. Niu, Chenxi Wang, Rui Jia, B.Q. Chen, M. Liu, Tianchun Ye (2007). Fabrication and characterization of single electron transistor on SOI. Microelectronic Engineering.DOI
519. Tianchun Ye (2007). A 4.2 GHz 1.8 V CMOS LC VCO. Research & Progress of SSE Solid State Electronics.
520. Yunfeng Wang, Qing Ye, Jiahan Man, Jun Fan, Tianchun Ye (2007). Design a 4GHz PLL for wireless receiver. International Conference on ASIC.DOI
521. Chaobo Li, Binbin Jiao, Shali Shi, Tianchun Ye, Dapeng Chen, Qingchuan Zhang, Zheying Guo, Fengliang Dong, Xiaoping Wu (2007). A novel MEMS-based focal plane array for infrared imaging. Frontiers of Electrical and Electronic Engineering in China.DOI
522. Tianchun Ye (2007). Electrostatic RF MEMS Switches Based on Mono Crystal Silicon Cantilever Structure. Equipment for Electronic Products Manufacturing.
523. Xiao-Li Zhu, Jie Ma, Leifeng Cao, Jia-Min Yang, Chang-Qing Xie, Ming Liu, Bao-Qin Chen, Jiebin Niu, Qing-Zhao Zhang, Ji Jiang, Min Zhao, Tianchun Ye (2007). Fabrication of High-Density Transmission Gratings for X-Ray Diffraction.
524. Jing-Bo Xu, Hai-Ying Zhang, Jun-Jian Yin, Liang Liu, Xiao Li, Tianchun Ye, Ming Li (2007). Monolithic Integration of 0.8μm Gate-Length GaAs-Based InGaP/AlGaAs/InGaAs Enhancement- and Depletion-Mode PHEMTs.
525. Tianchun Ye, Yu-Peng Jing, Y. Ou, Sha-Li Shi, Da-Peng Chen (2007). Anti-current-rush bulk silicon etching equipment.
526. Tianchun Ye, Yu-Peng Jing, Da-Peng Chen (2007). Manufacturing method of micro-electro-mechanism system magnetic executor based on overhead metal wire bridge.
527. Xiao Li, Hai-Ying Zhang, Jun-Jian Yin, Liang Liu, Jing-Bo Xu, Ming Li, Tianchun Ye, Min Gong (2007). Research of breakdown characteristic of InP composite channel HEMT.DOI
528. 黄钦文，陈大鹏，叶甜春，欧毅，张青川，李凯（2006）. 基于微悬臂梁结构的生化传感器. 《电子工业专用设备》.
529. 董立军，陈大鹏，欧毅，黄钦文，石莎莉，焦斌斌，李超波，杨清华，叶甜春（2006）. MEMS中的薄膜制造技术. 《电子工业专用设备》.
530. 景玉鹏，黄钦文，石莎莉，焦斌斌，李超波，董立军，杨清华，欧毅，陈大鹏，叶甜春（2006）. 日本近年RF MEMS开关研究的进展. 《电子工业专用设备》.
531. 李超波，焦斌斌，石莎莉，叶甜春，陈大鹏，张青川，郭哲颖，董凤良，伍小平（2006）. 基于MEMS技术的红外成像焦平面阵列. Journal of Semiconductors.
532. 叶甜春（2006）. 中国集成电路装备制造业自主创新战略. 《中国集成电路》.
533. 石莎莉，陈大鹏，丁德勇，欧毅，景玉鹏，董立军，叶甜春（2006）. MEMS器件牺牲层腐蚀释放技术研究. 《微细加工技术》.
534. 张立辉，李志刚，刘明，谢常青，叶甜春（2006）. 单电子晶体管的数值模拟及特性分析. 《固体电子学研究与进展》.
535. 叶甜春（2006）. 中国集成电路装备制造业自主创新战略的几点思考. 《机械设计与制造工程》.
536. 赵坤，满家汉，叶青，叶甜春（2006）. 无线通讯系统频率合成器结构设计综述. 《微电子学》.
537. 欧毅，白宏磊，石莎莉，焦斌斌，李超波，黄钦文，董立军，景玉鹏，陈大鹏，叶甜春，申功（2006）. 应用于流动控制的MEMS传感器和执行器. 《电子工业专用设备》.
538. 高大明，范军，叶青，叶甜春（2006）. 一种应用于A/D转换器的Flash单元的设计. 《微电子学》.
539. Hua Huang, Haiying Zhang, Jun-jian Yin, Tianchun Ye (2006). Enhancement Mode pHEMT LNA with Super Low Noise and High Gain for S Band Application. International Conference on Solid-State and Integrated Circuit Technology (ICSICT).DOI
540. Shali Shi, Dapeng Chen, Honglei Bai, Deyong Ding, Yi Ou, Tianchun Ye, Gongxin Shen (2006). A Novel Micro Thermal Shear Stress Sensor with a Cavity underneath. IEEE International Conference on Nano/Micro Engineered and Molecular Systems.DOI
541. Tianchun Ye (2006). A Flash Module for Analog-to-Digital Converters.
542. Tianchun Ye (2006). An Overview of Architecture Design of Frequency Synthesizers for Wireless Applications.
543. Tianchun Ye (2006). Simulation and Analysis on Characteristics of Single Electron Transistor. Research & Progress of SSE Solid State Electronics.
544. Tianchun Ye (2006). Thin Film Making Technology in MEMS.
545. Tianchun Ye (2006). Physics-Based Hydrodynamic Simulation of Direct Current Characteristics in DBRTD.
546. Chang-Qing Xie, Tianchun Ye (2006). Manufacture method of high resolution self-supporting totally hollowed-out transmission grating.
547. Xiao Li, Liang Liu, Hai-Ying Zhang, Jun-Jian Yin, Hai'ou Li, Tianchun Ye, Min Gong (2006). A new small signal physical model of InP-based composite channel high electron mobility transistor.DOI
548. Tianchun Ye (2006). Ohmic Contact to n-Type GaAs by a New Six-Layer Metal System.
549. 王玮冰，陈大鹏，叶甜春（2005）. 微悬臂梁结构传感器与信号读出系统的集成. 《电子工业专用设备》.
550. 王巍，叶甜春，陈大鹏，刘明，李兵（2005）. 高密度等离子体刻蚀机中的终点检测技术. 《微电子学》.
551. 廖勇明，董立军，韩敬东，陈大鹏，叶甜春（2005）. 用SiH2Cl2沉积MEMS中的多晶硅薄膜研究. 《电子工业专用设备》.
552. Kun Zhao, Jia-Han Man, Qing Ye, Tianchun Ye (2005). A fully integrated 1.2-GHz CMOS phase-locked loop. International Conference on ASIC.DOI
553. Jia-Xing Sun, Tianchun Ye, Shanqin Qiu (2005). Interconnect delay and slew computation with the first three moments. International Conference on ASIC.DOI
554. Kazunari Ozasa, Eun Kyu Kim, Tianchun Ye, Y. Aoyagi (2005). Selective Epitaxy With In Situ Mask Processing. Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics.DOI
555. Jiaxing Sun, Yun Zheng, Qing Ye, Tianchun Ye (2005). Interconnect Delay and Slew Metrics Using the First Three Moments. International Symposium on Quality of Electronic Design (ISQED).DOI
556. Jiaxing Sun, Yun Zheng, Qing Ye, Tianchun Ye (2005). Worst-case crosstalk noise analysis based on dual-exponential noise metrics. International Conference on VLSI Design and International Conference on Embedded Systems (VLSID).DOI
557. Tianchun Ye (2005). Study on Image Datum for High Resolution Zone Plates Fabricated by E-beam.
558. 牛旭花，叶青，王巍，黄令仪，叶甜春（2004）. 一种基于基本结构的CMOS CAM单元的优化设计. 《集成电路应用》.
559. 董立军，陈大鹏，谢常青，韩敬东，叶甜春，伊福廷，彭良强，韩勇，张菊芳（2004）. 50 nm X射线光刻掩模制备关键技术. 《核技术》.
560. 谢常青，陈大鹏，刘明，叶甜春，伊福廷（2004）. X射线光刻技术应用现状与前景. 《核技术》.
561. 谢常青，陈大鹏，李兵，叶甜春，伊福廷，彭良强，韩勇，张菊芳（2004）. 50nm及50nm以下同步辐射X射线光刻光束线设计. 《核技术》.
562. 陈大鹏，王玮冰，欧毅，杨清华，谢常青，刘辉，董立军，叶甜春（2004）. 基于薄膜结构的MEMS技术研究. 《电子工业专用设备》.
563. 陈大鹏，叶甜春（2004）. 现代光刻技术. 《核技术》.
564. Haijiang Li, Shouguo Wang, Zhao Lingli, Tianchun Ye (2004). Study on an Atmospheric Pressure Plasma Jet and its Application in Etching Photo-Resistant Materials. Plasma Science and Technology.DOI
565. Iuxia Xu, He Ian, Ming Liu, Zhengsheng Man, Baoqing Chen, Huaxiang Yin, Gang Lin, Yajiang Zhu, Tianchun Ye, Denxin Wu (2004). High performance 27 nm gate length CMOS device with EOT 1.4 nm gate oxynitride and strained technology. International Conference on Solid-State and Integrated Circuits Technology.DOI
566. Yu-Zhen Liu, Yuqin Zhou, Wan-Liang Shi, Ling-Li Zhao, Baoyin Sun, Tianchun Ye (2004). Study of photoluminescence spectra of Si-rich SiNx films.DOI
567. 王玮冰，叶甜春，陈大鹏，伍小平，张青川，潘亮，段志辉（2003）. 基于双材料悬臂梁结构的非制冷红外成像系统. 《微纳电子技术》.
568. Qiu-Xia Xu, Qian He, Ming Liu, Yu-Yin Zhao, Bao-Qin Chen, Zheng-Sheng Han, Tianchun Ye, De-Xin Wu (2003). 20 nm polysilicon gate patterning and application in 36 nm complementary metal–oxide–semiconductor devices.DOI
569. 谢常青，陈大鹏，李兵，叶甜春（2002）. 同步辐射x射线光刻制作深亚微米T形栅. 《微纳电子技术》.
570. 谢常青，陈大鹏，李兵，叶甜春（2002）. 应用于PHEMT器件的深亚微米T形栅光刻技术. 《微纳电子技术》.
571. 陈大鹏，叶甜春，谢常青，李兵，董立军，胥兴才，赵玪莉，韩敬东，彭良强，伊福庭，韩勇，张菊芳（2002）. 同步辐射光刻技术研究进展. 《核技术》.
572. Tianchun Ye, Ye Xunchun, Xiaoming Li (2002). Plasma etching damage to InGaAs/InP 2DEG material.DOI
573. Liu Ming, Baoqin Chen, Tianchun Ye, He Qian, Xu Qiuxia (2002). The sub-micron fabrication technology. International Conference on Solid-State and Integrated Circuit Technology (ICSICT).DOI
574. 谢常青，叶甜春，陈大鹏，李兵，胥兴才（2001）. 深亚微米同步辐射x射线光刻模拟. 《微纳电子技术》.
575. 谢常青，叶甜春（2001）. 极端远紫外光刻技术. 《微纳电子技术》.
576. 谢常青，叶甜春，陈大鹏，赵玲莉，胥兴才（2000）. 深亚微米同步辐射x射线光刻技术. 《微纳电子技术》.
577. 谢常青，叶甜春（1999）. 上海第三代同步辐射装置及其在微电子、微机械中的应用. 《科技导报》.
578. 谢常青，叶甜春（1999）. 193nm光学掩模与x射线掩模技术比较. 《微纳电子技术》.
579. 谢常青，叶甜春（1999）. 193nm光学光刻技术. 《微电子技术》.
580. Xun-Chun Li, Meng-Zhen Chen, Tianchun Ye, Yu-Ling Wang, Baoyin Sun, Run-Mei Wang, Chang-Qing Xie, Zhengya Cao, Zhangzhen Zhu (1995). Metal side-wall pattern with a supporter for X-ray mask. Proceedings of 4th International Conference on Solid-State and IC Technology.DOI
581. K. Ozasa, Tianchun Ye, Y. Aoyagi (1994). Deposition of thin indium oxide film and its application to selective epitaxy for in situ processing.DOI
582. K. Ozasa, Tianchun Ye, Y. Aoyagi (1994). Deposition of gallium oxide and indium oxide on GaAs for in situ process use by alternating supply of TEGa, TMIn, and H2O2 as surge pulses.DOI
583. K. Ozasa, Tianchun Ye, Y. Aoyagi (1993). Thin Gallium Oxide Film Deposited in Vacuum for In Situ Process Use.DOI
584. K. Ozasa, Tianchun Ye, Y. Aoyagi (1993). Selective epitaxy of GaAs on indium oxide mask followed by in situ removal of the mask.DOI
585. K. Ozasa, Tianchun Ye, Y. Aoyagi (1993). Composition Change of Indium Oxide Film by Triethylgallium Irradiation Prepared for In Situ Selective Epitaxy Use.DOI
586. Xiao-Feng He, Tai-Shan Mo, Cheng-Yan Ma, Tianchun Ye. Using a Wideband Digital Gain Control Amplifier with Linearity Improvement Technique for a Digital TV Tuner.

预印本

1. Y Zhang, Zhou Wang, Zhou Shu, Jiuren Zhou, Yanqing Xu, Xiaonan Tang, Shushan Qiao, Tianchun Ye, Yang Liu, Anil A. Bharath, Emm Mic Drakakis (2026). DSPE: An Energy-Efficient Edge Processor for DeepSeek Inference with MerkleTree-based Incremental Pruning, Multi-Stage Boothing Lookup and Dynamic Adaptive Posit Processing. arXiv (Cornell University).DOI
2. Yayi Wei, Dandan Han, Tianchun Ye, Sen Deng (2022). Enhancement of pattern quality with loss modulation: Applying plasmonic lithography in sub-20 nm technology node and beyond. Research Square.DOI
3. fei zhao, Yongliang Li, jiayi zhang, xiaofeng jia, anlan chen, Xiaohong Cheng, Yongqin Wu, Huaxiang Yin, kai zheng, Jun Luo, Weihai Bu, Jin Ung Kang, wenwu wang, Tianchun Ye (2022). Novel Stacked Sige/Si Finfet Device with Subthreshold Swing of 68mv/Dec Using Optimized Thermal Budget and Channel Passivation Technology. SSRN Electronic Journal.DOI

书籍章节

1. Tianchun Ye, Dapeng Chen, Shali Shi, Binbin Jiao (2018). Silicon-Based Optical Sensor: Uncooled Infrared Focal Plane Array Based on Bi-Materials Cantilever Microstructures. Micro/Nano technologies.DOI
2. Tianchun Ye, Dapeng Chen, Shali Shi, Binbin Jiao (2017). Silicon Based Optical Sensor: Uncooled Infrared Focal Plane Array Based on Bi-Materials Cantilever Microstructures. Toxinology.DOI