王旸旸

2025

SimBlock:全球互联网路由阻塞模拟与检测系统

《清华大学学报(自然科学版)》

DOI

2024

低成本大规模直播流量工程

《清华大学学报(自然科学版)》

2024

基于多台可编程交换机的网络拓扑仿真与性能评估

《清华大学学报(自然科学版)》

DOI

2024

Recent Experimental Breakthroughs on 2D Transistors: Approaching the Theoretical Limit

Advanced Functional Materials

DOI

2022

Unveiling a geometric angstrom era of transistors: Physical gate length scaled down to one atom thickness

Microelectronic Engineering

DOI

2021

Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment

Reports on progress in physics. Physical Society

DOI

2021

Sub-10 nm two-dimensional transistors: Theory and experiment

Physics reports

DOI

2021

Layer-Dependent Photoabsorption and Photovoltaic Effects in Two-Dimensional Bi2O2X ( X  =  S , Se , and Te )

DOI

2020

Designing strained C2N/GaTe(InTe) heterostructures for photovoltaic and photocatalytic application

DOI

2020

Designing sub-10-nm Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport and Disparate Effective Mass: The Case of Two-Dimensional BiN

Physical Review Applied

DOI

2019

软件定义网络中基于匹配动作表的IP隧道

《计算机学报》

2019

Interfacial Properties of Monolayer Antimonene Devices

Physical Review Applied

DOI

2019

Absorption and diffusion of lithium on layered InSe

DOI

2019

Anisotropic interfacial properties of monolayer GeSe—metal contacts

Semiconductor Science and Technology

DOI

2019

Computational Study of Ohmic Contact at Bilayer InSe-Metal Interfaces: Implications for Field-Effect Transistors

ACS Applied Nano Materials

DOI

2019

High-performance sub-10 nm monolayer Bi2O2Se transistors.

Nanoscale

DOI

2018

基于P4的主动网络遥测机制

《通信学报》

2018

Electrical contacts in monolayer blue phosphorene devices

Nano Reseach

DOI

2018

n-Type Ohmic contact and p-type Schottky contact of monolayer InSe transistors.

Physical Chemistry, Chemical Physics - PCCP

DOI

2018

Spontaneous Valley Splitting and Valley Pseudospin Field Effect Transistor of Monolayer VAgP2Se6

2018

Simulations of Quantum Transport in Sub-5-nm Monolayer Phosphorene Transistors

Physical Review Applied

DOI

2018

Sub-5 nm Monolayer Arsenene and Antimonene Transistors.

ACS Applied Materials and Interfaces

DOI

2018

Gate-tunable interfacial properties of in-plane ML MX2 1T′–2H heterojunctions

DOI

2018

Three-layer phosphorene-metal interfaces

Nano Reseach

DOI

2018

n- and p-type ohmic contacts at monolayer gallium nitride-metal interfaces.

Physical Chemistry, Chemical Physics - PCCP

DOI

2018

Many-Body Effect and Device Performance Limit of Monolayer InSe.

ACS Applied Materials and Interfaces

DOI

2018

High-performance sub-10-nm monolayer black phosphorene tunneling transistors

Nano Reseach

DOI

2018

Correction: Gate-tunable interfacial properties of in-plane ML MX2 1T′–2H heterojunctions

DOI

2018

Monolayer tellurene–metal contacts

DOI

2017

构建网络创新试验环境的探索

《中兴通讯技术》

2017

针对SDN基础设施的拒绝服务攻击防护框架

《东南大学学报(自然科学版)》

2017

Electrical Contacts in Monolayer Arsenene Devices.

ACS Applied Materials and Interfaces

DOI

2017

Schottky Barriers in Bilayer Phosphorene Transistors.

ACS Applied Materials and Interfaces

DOI

2017

Black phosphorus transistors with van der Waals-type electrical contacts.

Nanoscale

DOI

2017

A computational study of monolayer hexagonal WTe2 to metal interfaces

DOI

2017

Can a Black Phosphorus Schottky Barrier Transistor Be Good Enough?

ACS Applied Materials and Interfaces

DOI

2017

Many-body Effect, Carrier Mobility, and Device Performance of Hexagonal Arsenene and Antimonene

DOI

2017

Monolayer Bismuthene-Metal Contacts: A Theoretical Study.

ACS Applied Materials and Interfaces

DOI

2016

Performance Upper Limit of sub‐10 nm Monolayer MoS2 Transistors

Journal of Physical Chemistry C

DOI

2016

Interfacial Properties of Monolayer MoSe2–Metal Contacts

DOI

2016

Does the Dirac cone of germanene exist on metal substrates?

Physical Chemistry, Chemical Physics - PCCP

DOI

2016

Rise of silicene: A competitive 2D material

DOI

2016

Magnetoresistance in Co/2D MoS2/Co and Ni/2D MoS2/Ni junctions.

Physical Chemistry, Chemical Physics - PCCP

DOI

2015

Silicene transistors— A review

DOI

2015

Silicene nanomesh

Scientific Reports

DOI

2015

Silicene Spintronics

2015

Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations

Scientific Reports

DOI

2015

Silicene on substrates: A theoretical perspective

DOI

2015

Does p-type ohmic contact exist in WSe2-metal interfaces?

Nanoscale

DOI

2015

Modelling of stacked 2D materials and devices

DOI

2015

Monolayer Phosphorene-Metal Interfaces

2015

Silicene spintronics — A concise review

DOI

2014

Graphdiyne-metal contacts and graphdiyne transistors.

Nanoscale

DOI

2014

All‐Metallic Vertical Transistors Based on Stacked Dirac Materials

DOI

2014

Does the Dirac Cone Exist in Silicene on Metal Substrates?

Scientific Reports

DOI

2014

Gate-induced half-metallicity in semihydrogenated silicene

DOI

2013

Tunable band gap in germanene by surface adsorption

DOI

2013

Intrinsic region length scaling of heavily doped carbon nanotube p-i-n junctions.

Nanoscale

DOI

2013

Tunable band gap and doping type in silicene by surface adsorption: towards tunneling transistors.

Nanoscale

DOI

2013

Enhanced many‐body effects in one‐dimensional linear atomic chains

DOI

2013

Strong band hybridization between silicene and Ag(1 1 1) substrate

DOI

2013

Tunable band gap in few-layer graphene by surface adsorption

Scientific Reports

DOI

2013

Interfacial Properties of Bilayer and Trilayer Graphene on Metal Substrates

Scientific Reports

DOI

2012

Tunable and sizable band gap in silicene by surface adsorption

Scientific Reports

DOI

2012

HALF-METALLIC SILICENE AND GERMANENE NANORIBBONS: TOWARDS HIGH-PERFORMANCE SPINTRONICS DEVICE

DOI

2016

Monolayer Phosphorene–Metal Contacts

DOI

2016

Interfacial properties of stanene–metal contacts

DOI